The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistorsD.F. Lin, X.L. Wang, H.L. Xiao, C.M. Wang, L.J. Jiang, C. Feng, H. Chen, Q.F. Hou, Q.W. Deng, Y. Bi and H. KangEur. Phys. J. Appl. Phys., 55 3 (2011) 30104DOI: https://doi.org/10.1051/epjap/2011110209
