Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diodeM. Gassoumi, S. Saadaoui, M.M. Ben Salem, C. Gaquiere and H. MaarefEur. Phys. J. Appl. Phys., 55 3 (2011) 30101DOI: https://doi.org/10.1051/epjap/2011110136
