The conduction band alignment of HfO2 caused by oxygen vacancies and its effects on the gate leakage current in MOS structuresL. F. Mao, Z. O. Wang, J. Y. Wang and C. Y. ZhuEur. Phys. J. Appl. Phys., 40 1 (2007) 59-63DOI: https://doi.org/10.1051/epjap:2007129
