Full characterization at 904 nm of large area Si p-n junction photodetectors produced by LID techniqueR. A. Ismail, O. A. Abdulrazaq, A. A. Hadi and O. A. HamadiEur. Phys. J. Appl. Phys., 38 3 (2007) 197-201DOI: https://doi.org/10.1051/epjap:2007028
