Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopyR. Aubry, C. Dua, J.-C. Jacquet, F. Lemaire, P. Galtier, B. Dessertenne, Y. Cordier, M.-A. DiForte-Poisson and S. L. DelageEur. Phys. J. Appl. Phys., 30 2 (2005) 77-82DOI: https://doi.org/10.1051/epjap:2005025
