Evolution of defect structure of Ge-implanted Si crystal during nanosecond laser annealingD. Klinger, J. Auleytner, D. Żymierska, B. Kozankiewicz, A. Barcz, L. Nowicki and A. StonertEur. Phys. J. Appl. Phys., 27 1-3 (2004) 149-153DOI: https://doi.org/10.1051/epjap:2004133
