Microscopic defects and homogeneity investigations in 4H-SiC epitaxial wafers by UV scanning photoluminescence spectroscopyI. El Harrouni, J.-M. Bluet, D. Ziane, C. Sartel and G. GuillotEur. Phys. J. Appl. Phys., 27 1-3 (2004) 235-238DOI: https://doi.org/10.1051/epjap:2004105
