Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structuresG. Kamler, J. Borysiuk, J. L. Weyher, A. Presz, M. Woźniak and I. GrzegoryEur. Phys. J. Appl. Phys., 27 1-3 (2004) 247-249DOI: https://doi.org/10.1051/epjap:2004103
