Distribution and properties of oxide precipitates in annealed nitrogen doped 300 mm Si wafersV. D. Akhmetov, H. Richter, W. Seifert, O. Lysytskiy, R. Wahlich, T. Müller and M. ReicheEur. Phys. J. Appl. Phys., 27 1-3 (2004) 159-161DOI: https://doi.org/10.1051/epjap:2004084