Effect of the p+-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasersM. Pommiès, M. Avella, G. Patriarche, M. Bettiati, G. Hallais and J. JiménezEur. Phys. J. Appl. Phys., 27 1-3 (2004) 465-468DOI: https://doi.org/10.1051/epjap:2004052
