A study of growth mechanism of microcrystalline thin silicon films deposited at low temperature by SiF4-H2-He PECVDM. Losurdo, M. Giangregorio, A. Grimaldi, P. Capezzuto and G. BrunoEur. Phys. J. Appl. Phys., 26 3 (2004) 187-192DOI: https://doi.org/10.1051/epjap:2004032
