Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurementsR. Aubry, J.-C. Jacquet, B. Dessertenne, E. Chartier, D. Adam, Y. Cordier, F. Semond, J. Massies, M.-A. DiForte-Poisson, A. Romann and S. L. DelageEur. Phys. J. AP, 22 2 (2003) 77-82DOI: https://doi.org/10.1051/epjap:2003026
