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Charge transport limited by grain boundaries in polycrystalline octithiophene thin film transistors

R. Bourguiga, G. Horowitz, F. Garnier, R. Hajlaoui, S. Jemai and H. Bouchriha

Eur. Phys. J. AP, 19 2 (2002) 117-122

DOI: https://doi.org/10.1051/epjap:2002057

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