Solid source molecular beam epitaxial growth of In0.48Ga0.52P on GaAs substrates using a valved phosphorus cracker cellS. F. Yoon, K. W. Mah and H. Q. ZhengEur. Phys. J. AP, 7 2 (1999) 111-117DOI: https://doi.org/10.1051/epjap:1999205
