The residual electrically active damage in low energy boron implanted silicon: rapid thermal annealing and implant mass effectsL. Kaabi, J. Ben Brahim, B. Remaki, C. Gontrand, H. El Omari, J.-C. Bureau, Z. Sassi and B. BallandEur. Phys. J. AP, 3 1 (1998) 49-52DOI: https://doi.org/10.1051/epjap:1998203
