Theoretical investigations on the confinement properties of InAlN/GaN/AlGaN heterostructures employing AlxGa1-xN as back-barrierDingding Shi, Jing Yang, Jing Zhao, Meilan Hao and Lirong LiEur. Phys. J. Appl. Phys., 100 (2025) 7DOI: https://doi.org/10.1051/epjap/2025006
