Effect of N doping on hole density of Cu2O:N films prepared by the reactive magnetron sputtering methodB.B. Li, L. Lin, H.L. Shen, F.E. Boafo, Z.F. Chen, B. Liu and R. ZhangEur. Phys. J. Appl. Phys., 58 2 (2012) 20303DOI: https://doi.org/10.1051/epjap/2012120020
