Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substratesA. Ilgaz, S. Gökden, R. Tülek, A. Teke, S. Özçelik and E. ÖzbayEur. Phys. J. Appl. Phys., 55 3 (2011) 30102DOI: https://doi.org/10.1051/epjap/2011110218
