The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structureY. Bi, X.L. Wang, H.L. Xiao, C.M. Wang, E.C. Peng, D.F. Lin, C. Feng and L.J. JiangEur. Phys. J. Appl. Phys., 55 1 (2011) 10102DOI: https://doi.org/10.1051/epjap/2011110184
