Enhanced light extraction from InGaN/GaN-based light emitting diodes epistructure with ICP-etched nanoisland GaN:Mg surfaceH. Gong, X. Hao, W. Xia, Y. Wu and X. XuEur. Phys. J. Appl. Phys., 50 1 (2010) 10301DOI: https://doi.org/10.1051/epjap/2010024
