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Cited article:

Minority carrier bulk lifetimes through a large multicrystalline silicon ingot and related solar cell properties

S. Martinuzzi, M. Gauthier, D. Barakel, I. Périchaud, N. Le Quang, O. Palais, G. Goaer

Eur. Phys. J. Appl. Phys., 40 1 (2007) 83-88

Published online: 2007-08-31

DOI: https://doi.org/10.1051/epjap:2007130

This article has been cited by the following article(s):

Multicrystalline silicon wafers prepared from upgraded metallurgical feedstock

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DOI: 10.1016/j.solmat.2008.04.020
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Limiting factors of gettering treatments in mc-Si wafers from the metallurgical route

I. Périchaud, S. Martinuzzi, J. Degoulange and C. Trassy
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DOI: 10.1016/j.mseb.2008.11.030
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Effects of crystal defects and their interactions with impurities on electrical properties of multicrystalline Si

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Journal of Applied Physics 113 (13) 133503 (2013)
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Characterization of Ga Co-Doping mc-Si Ingot Made of Solar-Grade Silicon Purified by Metallurgical Route

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Advanced Materials Research 703 58 (2013)
DOI: 10.4028/www.scientific.net/AMR.703.58
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