Rare earth doped III-nitrides for optoelectronics
Eur. Phys. J. Appl. Phys., 36 2 (2006) 91-103
Published online: 2006-10-28
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Luminescence of Eu ions inAlxGa1−xNacross the entire alloy composition range
K. Wang, K. P. O’Donnell, B. Hourahine, et al.Physical Review B 80 (12) 125206 (2009)
DOI: 10.1103/PhysRevB.80.125206
See this article
Luminescence of Eu3+ in GaN(Mg, Eu): Transitions from the 5D1 level
A. K. Singh, K. P. O'Donnell, P. R. Edwards, et al.Applied Physics Letters 111 (24) 241105 (2017)
DOI: 10.1063/1.5001143
See this article
Excited Multiplets of Eu in GaN
Ben HourahineMRS Proceedings 1290 mrsf10-1290-i03-08 (2011)
DOI: 10.1557/opl.2011.525
See this article
Identification of the prime optical center inGaN:Eu3+
I. S. Roqan, K. P. O'Donnell, R. W. Martin, et al.Physical Review B 81 (8) 085209 (2010)
DOI: 10.1103/PhysRevB.81.085209
See this article
Defect studies and optical activation of Yb doped GaN
K Lorenz, E Alves, S Magalhães, et al.Journal of Physics: Conference Series 249 012053 (2010)
DOI: 10.1088/1742-6596/249/1/012053
See this article
Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy
Ji-Ho Park, Akihiro Wakahara, Hiroshi Okada, et al.Japanese Journal of Applied Physics 50 031003 (2011)
DOI: 10.1143/JJAP.50.031003
See this article
Optical doping and damage formation in AlN by Eu implantation
K. Lorenz, E. Alves, F. Gloux, et al.Journal of Applied Physics 107 (2) 023525 (2010)
DOI: 10.1063/1.3291100
See this article
Study of Luminescence from GaN:Tb[sup 3+] Powders and Thin Films Deposited by MOVPE and PLD Methods
Jonathan H. Tao, Joseph Laski, Nestor Perea-Lopez, et al.Journal of The Electrochemical Society 156 (6) J158 (2009)
DOI: 10.1149/1.3116203
See this article
Silicon-based oxynitride and nitride phosphors for white LEDs—A review
Rong-Jun Xie and Naoto HirosakiScience and Technology of Advanced Materials 8 (7-8) 588 (2007)
DOI: 10.1016/j.stam.2007.08.005
See this article
Hybrid density functional study of optically active Er3+ centers in GaN
Khang Hoangphysica status solidi (RRL) - Rapid Research Letters 9 (12) 722 (2015)
DOI: 10.1002/pssr.201510269
See this article
Surface morphology and optical properties of Eu 3+ ions incorporated into N-polar GaN grown by organometallic vapor phase epitaxy
Ryoken Fuji, Brandon Mitchell, Atsushi Koizumi, Tomohiro Inaba and Yasufumi FujiwaraJournal of Crystal Growth 468 862 (2017)
DOI: 10.1016/j.jcrysgro.2017.01.015
See this article
Europium doping of zincblende GaN by ion implantation
K. Lorenz, I. S. Roqan, N. Franco, et al.Journal of Applied Physics 105 (11) 113507 (2009)
DOI: 10.1063/1.3138806
See this article
Optical and structural properties of Eu-implanted InxAl1−xN
I. S. Roqan, K. P. O’Donnell, R. W. Martin, et al.Journal of Applied Physics 106 (8) 083508 (2009)
DOI: 10.1063/1.3245386
See this article
Eu–Mg defects and donor–acceptor pairs in GaN: photodissociation and the excitation transfer problem
A K Singh, K P O’Donnell, P R Edwards, et al.Journal of Physics D: Applied Physics 51 (6) 065106 (2018)
DOI: 10.1088/1361-6463/aaa1cc
See this article
GaN Doped with Neodymium by Plasma-Assisted Molecular Beam Epitaxy for Potential Lasing Applications
Eric D. Readinger, Grace D. Metcalfe, Paul Hongen Shen, et al.MRS Proceedings 1111 1111-D02-04 (2008)
DOI: 10.1557/PROC-1111-D02-04
See this article
Lattice site location and luminescence studies of AlxGa1−xN alloys doped with thulium ions
M. Fialho, K. Lorenz, S. Magalhães, et al.Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 307 495 (2013)
DOI: 10.1016/j.nimb.2013.01.010
See this article
Nitride Semiconductor Light-Emitting Diodes (LEDs)
Y. Kotsar and E. MonroyNitride Semiconductor Light-Emitting Diodes (LEDs) 533 (2014)
DOI: 10.1533/9780857099303.3.533
See this article
Cerium induced ferromagnetic exchange interactions in GaN
Abdul Majid, Amna Dar and J.J. ZhuJournal of Magnetism and Magnetic Materials 374 676 (2015)
DOI: 10.1016/j.jmmm.2014.09.041
See this article
Rare-earth defect pairs in GaN:LDA+Ucalculations
Simone Sanna, W. G. Schmidt, Th. Frauenheim and U. GerstmannPhysical Review B 80 (10) 104120 (2009)
DOI: 10.1103/PhysRevB.80.104120
See this article
Effect of Intrinsic Defects on Electronic and Magnetic Properties in Tm-Doped GaN: First-Principles Calculations
Y. R. Li, H. L. Su, Z. T. Hou, et al.Journal of Superconductivity and Novel Magnetism 31 (12) 3911 (2018)
DOI: 10.1007/s10948-018-4654-3
See this article
Enhanced stability of Eu in GaN nanoparticles: Effects of Si co-doping
Prabhsharan Kaur, S. S. Sekhon, J. M. Zavada and Vijay KumarJournal of Applied Physics 117 (22) 224301 (2015)
DOI: 10.1063/1.4922172
See this article
Direct evidence of trap-mediated excitation in GaN:Er3+ with a two-color experiment
Loic Bodiou and Alain BraudApplied Physics Letters 93 (15) 151107 (2008)
DOI: 10.1063/1.2999585
See this article
Effect of Mg codoping on Eu3+ luminescence in GaN grown by ammonia molecular beam epitaxy
Yasufumi Takagi, Takanobu Suwa, Hiroto Sekiguchi, Hiroshi Okada and Akihiro WakaharaApplied Physics Letters 99 (17) 171905 (2011)
DOI: 10.1063/1.3656018
See this article
Magnetic properties of five planar defect dicubanes of [LnIII4(μ3-OH)2(L)4(HL)2]·2THF (Ln=Gd, Tb, Dy, Ho and Er)
Kartik Chandra Mondal, George E. Kostakis, Yanhua Lan and Annie K. PowellPolyhedron 66 268 (2013)
DOI: 10.1016/j.poly.2013.05.016
See this article
Structural, Optical and Magnetic Properties of Ce–GaN Based Diluted Magnetic Semiconductor
Abdul Majid, Javed Iqbal and Akbar AliJournal of Superconductivity and Novel Magnetism 24 (1-2) 585 (2011)
DOI: 10.1007/s10948-010-1004-5
See this article
GaN doped with neodymium by plasma-assisted molecular beam epitaxy
E. D. Readinger, G. D. Metcalfe, H. Shen and M. WrabackApplied Physics Letters 92 (6) 061108 (2008)
DOI: 10.1063/1.2844850
See this article
Validity of the Slater-Janak transition-state model within theLDA+Uapproach
Simone Sanna, Th. Frauenheim and U. GerstmannPhysical Review B 78 (8) 085201 (2008)
DOI: 10.1103/PhysRevB.78.085201
See this article
Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE
Akihiro Wakahara, Hiroto Sekiguchi, Hiroshi Okada and Yasufumi TakagiJournal of Luminescence 132 (12) 3113 (2012)
DOI: 10.1016/j.jlumin.2012.02.001
See this article
Structural and optical characterization of Eu-implanted GaN
K Lorenz, N P Barradas, E Alves, et al.Journal of Physics D: Applied Physics 42 (16) 165103 (2009)
DOI: 10.1088/0022-3727/42/16/165103
See this article
Near infrared photonic devices based on Er-doped GaN and InGaN
R. Dahal, J.Y. Lin, H.X. Jiang and J.M. ZavadaOptical Materials 33 (7) 1066 (2011)
DOI: 10.1016/j.optmat.2010.10.002
See this article
The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN
K.P. O’Donnell, I.S. Roqan, Ke Wang, et al.Optical Materials 33 (7) 1063 (2011)
DOI: 10.1016/j.optmat.2010.07.002
See this article
1.54 μm emitters based on erbium doped InGaN p-i-n junctions
R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang and J. M. ZavadaApplied Physics Letters 97 (14) 141109 (2010)
DOI: 10.1063/1.3499654
See this article
Rare Earth and Transition Metal Doping of Semiconductor Materials
V. Kumar and J.M. ZavadaRare Earth and Transition Metal Doping of Semiconductor Materials 103 (2016)
DOI: 10.1016/B978-0-08-100041-0.00003-2
See this article
Efficient tight-binding approach for the study of strongly correlated systems
Simone Sanna, B. Hourahine, U. Gerstmann and Th. FrauenheimPhysical Review B 76 (15) 155128 (2007)
DOI: 10.1103/PhysRevB.76.155128
See this article
Effect of fluence on the lattice site of implanted Er and implantation induced strain in GaN
U. Wahl, B. De Vries, S. Decoster, A. Vantomme and J.G. CorreiaNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267 (8-9) 1340 (2009)
DOI: 10.1016/j.nimb.2009.01.043
See this article
Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: A key chemical technology for advanced device applications
Ian M. WatsonCoordination Chemistry Reviews 257 (13-14) 2120 (2013)
DOI: 10.1016/j.ccr.2012.10.020
See this article
Spectroscopic and energy transfer studies of Eu3+ centers in GaN
Hongying Peng, Chang-Won Lee, Henry O. Everitt, et al.Journal of Applied Physics 102 (7) 073520 (2007)
DOI: 10.1063/1.2783893
See this article
Current-injected 1.54μm light emitting diodes based on erbium-doped GaN
R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang and J. M. ZavadaApplied Physics Letters 93 (3) 033502 (2008)
DOI: 10.1063/1.2955834
See this article
Microscopic structure and energy transfer of vacancy-related defect pairs with Erbium in wide-gap semiconductors
A. Konopka, S. Greulich-Weber, V. Dierolf, et al.Optical Materials 33 (7) 1041 (2011)
DOI: 10.1016/j.optmat.2010.12.005
See this article
Induced magnetic moment of Eu3+ ions in GaN
V. Kachkanov, M. J. Wallace, G. van der Laan, et al.Scientific Reports 2 (2012)
DOI: 10.1038/srep00969
See this article
Afterglow of Eu-related emission in Eu-doped gallium nitride grown by organometallic vapor phase epitaxy
R. Wakamatsu, D. Timmerman, D. Lee, A. Koizumi and Y. FujiwaraJournal of Applied Physics 116 (4) 043515 (2014)
DOI: 10.1063/1.4891232
See this article
Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy
Ji-Ho Park, Akihiro Wakahara, Hiroshi Okada, et al.Japanese Journal of Applied Physics 50 (3R) 031003 (2011)
DOI: 10.7567/JJAP.50.031003
See this article
Luminescence spectroscopy of Eu-implanted zincblende GaN
I. S. Roqan, K. P. O'Donnell, C. Trager-Cowan, et al.physica status solidi (b) 245 (1) 170 (2008)
DOI: 10.1002/pssb.200743372
See this article
X-ray absorption in GaGdN: A study of local structure
G. Martínez-Criado, O. Sancho-Juan, N. Garro, et al.Applied Physics Letters 93 (2) 021916 (2008)
DOI: 10.1063/1.2957984
See this article
Electron paramagnetic resonance of Er3+ ions in aluminum nitride
Shan Yang, S. M. Evans, L. E. Halliburton, et al.Journal of Applied Physics 105 (2) 023714 (2009)
DOI: 10.1063/1.3065532
See this article
Synthesis and optical properties of Ce-doped GaN single-crystalline nanowires
Jie Guo, J.K. Jian, Z.H. Zhang, et al.Journal of Alloys and Compounds 660 220 (2016)
DOI: 10.1016/j.jallcom.2015.11.096
See this article
Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results
Paul Edwards, Kevin O’Donnell, Akhilesh Singh, et al.Materials 11 (10) 1800 (2018)
DOI: 10.3390/ma11101800
See this article
Analysis of the Tb3+ recombination in ion implanted Al Ga1−N (0≤x≤1) layers
J. Rodrigues, M. Fialho, S. Magalhães, et al.Journal of Luminescence 178 249 (2016)
DOI: 10.1016/j.jlumin.2016.05.018
See this article
Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications
J. Cardoso, N. Ben Sedrine, A. Alves, et al.Applied Physics Letters 113 (20) 201905 (2018)
DOI: 10.1063/1.5048772
See this article
Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices
D. Nd. Faye, M. Fialho, S. Magalhães, et al.Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 379 251 (2016)
DOI: 10.1016/j.nimb.2016.03.028
See this article
Theoretical study of rare earth point defects in GaN
Simone Sanna, B. Hourahine, Th. Frauenheim and U. Gerstmannphysica status solidi (c) 5 (6) 2358 (2008)
DOI: 10.1002/pssc.200778667
See this article
Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with Tb
J. Rodrigues, M. Fialho, S. Magalhães, et al.Journal of Luminescence 210 413 (2019)
DOI: 10.1016/j.jlumin.2019.02.060
See this article