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Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications
J. Cardoso, N. Ben Sedrine, A. Alves, M. A. Martins, M. Belloeil, B. Daudin, D. Nd. Faye, E. Alves, K. Lorenz, A. J. Neves, M. R. Correia and T. Monteiro Applied Physics Letters 113(20) (2018) https://doi.org/10.1063/1.5048772
Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results
Paul R. Edwards, Kevin P. O’Donnell, Akhilesh K. Singh, Douglas Cameron, Katharina Lorenz, Mitsuo Yamaga, Jacob H. Leach, Menno J. Kappers and Michal Boćkowski Materials 11(10) 1800 (2018) https://doi.org/10.3390/ma11101800
Effect of Intrinsic Defects on Electronic and Magnetic Properties in Tm-Doped GaN: First-Principles Calculations
Luminescence of Eu3+ in GaN(Mg, Eu): Transitions from the 5D1 level
A. K. Singh, K. P. O'Donnell, P. R. Edwards, D. Cameron, K. Lorenz, M. J. Kappers, M. Boćkowski, M. Yamaga and R. Prakash Applied Physics Letters 111(24) (2017) https://doi.org/10.1063/1.5001143
Analysis of the Tb3+ recombination in ion implanted Al Ga1−N (0≤x≤1) layers
Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices
D. Nd. Faye, M. Fialho, S. Magalhães, et al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 379 251 (2016) https://doi.org/10.1016/j.nimb.2016.03.028
Synthesis and optical properties of Ce-doped GaN single-crystalline nanowires
Afterglow of Eu-related emission in Eu-doped gallium nitride grown by organometallic vapor phase epitaxy
R. Wakamatsu, D. Timmerman, D. Lee, A. Koizumi and Y. Fujiwara Journal of Applied Physics 116(4) (2014) https://doi.org/10.1063/1.4891232
Lattice site location and luminescence studies of AlxGa1−xN alloys doped with thulium ions
M. Fialho, K. Lorenz, S. Magalhães, et al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 307 495 (2013) https://doi.org/10.1016/j.nimb.2013.01.010
Magnetic properties of five planar defect dicubanes of [LnIII4(μ3-OH)2(L)4(HL)2]·2THF (Ln=Gd, Tb, Dy, Ho and Er)
Optical doping and damage formation in AlN by Eu implantation
K. Lorenz, E. Alves, F. Gloux, P. Ruterana, M. Peres, A. J. Neves and T. Monteiro Journal of Applied Physics 107(2) (2010) https://doi.org/10.1063/1.3291100
Defect studies and optical activation of Yb doped GaN
Electron paramagnetic resonance of Er3+ ions in aluminum nitride
Shan Yang, S. M. Evans, L. E. Halliburton, G. A. Slack, S. B. Schujman, K. E. Morgan, R. T. Bondokov and S. G. Mueller Journal of Applied Physics 105(2) (2009) https://doi.org/10.1063/1.3065532
Effect of fluence on the lattice site of implanted Er and implantation induced strain in GaN
U. Wahl, B. De Vries, S. Decoster, A. Vantomme and J.G. Correia Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267(8-9) 1340 (2009) https://doi.org/10.1016/j.nimb.2009.01.043
Europium doping of zincblende GaN by ion implantation
K. Lorenz, I. S. Roqan, N. Franco, K. P. O’Donnell, V. Darakchieva, E. Alves, C. Trager-Cowan, R. W. Martin, D. J. As and M. Panfilova Journal of Applied Physics 105(11) (2009) https://doi.org/10.1063/1.3138806
Optical and structural properties of Eu-implanted InxAl1−xN
I. S. Roqan, K. P. O’Donnell, R. W. Martin, C. Trager-Cowan, V. Matias, A. Vantomme, K. Lorenz, E. Alves and I. M. Watson Journal of Applied Physics 106(8) (2009) https://doi.org/10.1063/1.3245386
Theoretical study of rare earth point defects in GaN
Luminescence spectroscopy of Eu‐implanted zincblende GaN
I. S. Roqan, K. P. O'Donnell, C. Trager‐Cowan, B. Hourahine, R. W. Martin, K. Lorenz, E. Alves, D. J. As, M. Panfilova and I. M. Watson physica status solidi (b) 245(1) 170 (2008) https://doi.org/10.1002/pssb.200743372
Current-injected 1.54μm light emitting diodes based on erbium-doped GaN
R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang and J. M. Zavada Applied Physics Letters 93(3) (2008) https://doi.org/10.1063/1.2955834
X-ray absorption in GaGdN: A study of local structure
G. Martínez-Criado, O. Sancho-Juan, N. Garro, J. A. Sans, A. Cantarero, J. Susini, M. Roever, D.-D. Mai, A. Bedoya-Pinto, J. Malindretos and A. Rizzi Applied Physics Letters 93(2) (2008) https://doi.org/10.1063/1.2957984
Direct evidence of trap-mediated excitation in GaN:Er3+ with a two-color experiment
Spectroscopic and energy transfer studies of Eu3+ centers in GaN
Hongying Peng, Chang-Won Lee, Henry O. Everitt, Chanaka Munasinghe, D. S. Lee and Andrew J. Steckl Journal of Applied Physics 102(7) (2007) https://doi.org/10.1063/1.2783893
Silicon-based oxynitride and nitride phosphors for white LEDs—A review