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Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n +-Si-SiO2-n-Si heterostructures

A. G. Zhdan, N. F. Kukharskaya, V. G. Naryshkina and G. V. Chucheva
Semiconductors 41 (9) 1117 (2007)
DOI: 10.1134/S1063782607090187
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