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Cited article:

Instability analysis of charges trapped in the oxide of metal-ultra thin oxide-semiconductor structures

A. Aziz, K. Kassmi, R. Maimouni, F. Olivié, G. Sarrabayrouse, A. Martinez

Eur. Phys. J. Appl. Phys., 31 3 (2005) 169-178

Published online: 2005-09-14

DOI: https://doi.org/10.1051/epjap:2005055

This article has been cited by the following article(s):

Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n +-Si-SiO2-n-Si heterostructures

A. G. Zhdan, N. F. Kukharskaya, V. G. Naryshkina and G. V. Chucheva
Semiconductors 41 (9) 1117 (2007)
DOI: 10.1134/S1063782607090187
See this article