The European Physical Journal Applied Physics (EPJ AP)

Effect of the Annealing Temperature of the Seed Layer on the Following Main Layer in Atomic‐Layer‐Deposited SrTiO 3 Thin Films

Sang Hyeon Kim, Woongkyu Lee, Cheol Hyun An, et al.
physica status solidi (RRL) – Rapid Research Letters 13 (5) 1800557 (2019)
DOI: 10.1002/pssr.201800557
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Time dependence of ethylene decomposition and byproducts formation in a continuous flow dielectric-packed plasma reactor

M. Sanjeeva Gandhi, Antony Ananth, Young Sun Mok, Jun-Ik Song and Kyu-Hyun Park
Chemosphere 91 (5) 685 (2013)
DOI: 10.1016/j.chemosphere.2013.01.060
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Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics

J. L. Everaert, E. Rosseel, J. Dekoster, et al.
Applied Physics Letters 96 (12) 122906 (2010)
DOI: 10.1063/1.3373920
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Investigating doping effects on high-κ metal gate stack for effective work function engineering

C. Leroux, S. Baudot, M. Charbonnier, et al.
Solid-State Electronics 88 21 (2013)
DOI: 10.1016/j.sse.2013.04.011
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Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications

Nelson Y. Garces, David J. Meyer, Virginia D. Wheeler, et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32 (3) 03D101 (2014)
DOI: 10.1116/1.4818254
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Evolutionary search for new high-kdielectric materials: methodology and applications to hafnia-based oxides

Qingfeng Zeng, Artem R. Oganov, Andriy O. Lyakhov, et al.
Acta Crystallographica Section C Structural Chemistry 70 (2) 76 (2014)
DOI: 10.1107/S2053229613027861
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Gallium Nitride Power Devices

Tianli Duan and Liu Zhihong
Gallium Nitride Power Devices 145 (2017)
DOI: 10.1201/9781315196626-7
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Mechanism of photocatalytic activities in Cr-doped SrTiO3 under visible-light irradiation: an insight from hybrid density-functional calculations

Pakpoom Reunchan, Naoto Umezawa, Shuxin Ouyang and Jinhua Ye
Physical Chemistry Chemical Physics 14 (6) 1876 (2012)
DOI: 10.1039/c2cp23348g
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Electronic structure of an oxygen vacancy in Al2O3 from the results of Ab Initio quantum-chemical calculations and photoluminescence experiments

V. A. Pustovarov, V. Sh. Aliev, T. V. Perevalov, V. A. Gritsenko and A. P. Eliseev
Journal of Experimental and Theoretical Physics 111 (6) 989 (2010)
DOI: 10.1134/S1063776110120113
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Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

S. Gieraltowska, L. Wachnicki, B.S. Witkowski, M. Godlewski and E. Guziewicz
Thin Solid Films 520 (14) 4694 (2012)
DOI: 10.1016/j.tsf.2011.10.151
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Interlevel transitions in core–shell nanodots with dielectric environment

E.C. Niculescu
Superlattices and Microstructures 51 (6) 814 (2012)
DOI: 10.1016/j.spmi.2012.03.025
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Defects and their passivation in high K gate oxides

K. Tse and J. Robertson
Microelectronic Engineering 84 (4) 663 (2007)
DOI: 10.1016/j.mee.2006.12.009
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Fabrication of Releasable Single-Crystal Silicon-Metal Oxide Field-Effect Devices and Their Deterministic Assembly on Foreign Substrates

Hyun-Joong Chung, Tae-il Kim, Hoon-Sik Kim, et al.
Advanced Functional Materials 21 (16) 3029 (2011)
DOI: 10.1002/adfm.201100124
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Interfaces in {100} epitaxial heterostructures of perovskite oxides

J.-L. Maurice, D. Imhoff, J.-P. Contour and C. Colliex
Philosophical Magazine 86 (15) 2127 (2006)
DOI: 10.1080/14786430600640460
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Structural and dielectric properties of oxynitride perovskite LaTiOxNy thin films

A. Ziani, C. Le Paven-Thivet, L. Le Gendre, et al.
Thin Solid Films 517 (2) 544 (2008)
DOI: 10.1016/j.tsf.2008.06.061
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Role of defect relaxation for trap-assisted tunneling in high-κthin films: A first-principles kinetic Monte Carlo study

Gunther Jegert, Dan Popescu, Paolo Lugli, et al.
Physical Review B 85 (4) 045303 (2012)
DOI: 10.1103/PhysRevB.85.045303
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Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces

Hyeon-Kyun Noh, Young Jun Oh and K.J. Chang
Physica B: Condensed Matter 407 (15) 2907 (2012)
DOI: 10.1016/j.physb.2011.08.079
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Induced-charge electroosmotic flow around dielectric particles in uniform electric field

Fang Zhang and Dongqing Li
Journal of Colloid and Interface Science 410 102 (2013)
DOI: 10.1016/j.jcis.2013.08.017
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Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

J. Charles Pravin, D. Nirmal, P. Prajoon and J. Ajayan
Physica E: Low-dimensional Systems and Nanostructures 83 95 (2016)
DOI: 10.1016/j.physe.2016.04.017
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Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies

Baikadi Pranay Kumar Reddy, Karri Babu Ravi Teja and Kavindra Kandpal
Semiconductors 52 (4) 420 (2018)
DOI: 10.1134/S1063782618040073
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Hafnium-Oxide 3-D Nanofilms via the Anodizing of Al/Hf Metal Layers

Alexander Mozalev, Maria Bendova, Francesc Gispert-Guirado and Eduard Llobet
Chemistry of Materials 30 (8) 2694 (2018)
DOI: 10.1021/acs.chemmater.8b00188
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Flexible IGZO Schottky diodes on paper

Jakub Kaczmarski, Michał A Borysiewicz, Krzysztof Piskorski, et al.
Semiconductor Science and Technology 33 (1) 015010 (2018)
DOI: 10.1088/1361-6641/aa9acb
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High-throughput identification of higher- κ dielectrics from an amorphous N 2 -doped HfO 2 –TiO 2 library

K.-S. Chang, W.-C. Lu, C.-Y. Wu and H.-C. Feng
Journal of Alloys and Compounds 615 386 (2014)
DOI: 10.1016/j.jallcom.2014.06.115
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Applications of Oxide Coatings in Photovoltaic Devices

Sonya Calnan
Coatings 4 (1) 162 (2014)
DOI: 10.3390/coatings4010162
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Nucleation and crystal growth in HfO2 thin films by UV nanosecond pulsed laser annealing

Toshiyuki Tabata
Applied Physics Express 13 (1) 015509 (2020)
DOI: 10.7567/1882-0786/ab5ce2
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Epitaxial integration of tetragonal BiFeO3 with silicon for nonvolatile memory applications

Jingbin Zhu, Zhigang Yin, Zhen Fu, et al.
Journal of Crystal Growth 459 178 (2017)
DOI: 10.1016/j.jcrysgro.2016.11.081
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Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors

Yuji Kiyota, Kenji Itaka, Yuta Iwashita, et al.
Japanese Journal of Applied Physics 50 (6) 06GH12 (2011)
DOI: 10.1143/JJAP.50.06GH12
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High-quality ZrO2/Si(001) thin films by a sol-gel process: Preparation and characterization

H. Döscher, G. Lilienkamp, P. Iskra, et al.
Journal of Applied Physics 107 (9) 094103 (2010)
DOI: 10.1063/1.3340830
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Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAIO3/SrTiO3 interface as a function of LaAIO3 growth conditions

J.-L. Maurice, G. Herranz, C. Colliex, et al.
EPL (Europhysics Letters) 82 (1) 17003 (2008)
DOI: 10.1209/0295-5075/82/17003
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Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

O. Engström, B. Raeissi, S. Hall, et al.
Solid-State Electronics 51 (4) 622 (2007)
DOI: 10.1016/j.sse.2007.02.021
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Differences Between Charge Trapping States in Irradiated Nano-Crystalline HfO<formula formulatype="inline"><tex>$_{2}$</tex></formula> and Non-Crystalline Hf Silicates

G. Lucovsky, D. M. Fleetwood, S. Lee, et al.
IEEE Transactions on Nuclear Science 53 (6) 3644 (2006)
DOI: 10.1109/TNS.2006.886211
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Ultra-thin and Flat Mica as Gate Dielectric Layers

Chong Guan Low and Qing Zhang
Small 8 (14) 2178 (2012)
DOI: 10.1002/smll.201200300
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Hydrogen Barrier Layer Against Silicon Oxidation during Atomic Layer Deposition of Al[sub 2]O[sub 3] and HfO[sub 2]

Martin M. Frank, Yu Wang, Ming-Tsung Ho, et al.
Journal of The Electrochemical Society 154 (2) G44 (2007)
DOI: 10.1149/1.2405839
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Annealing effect on the formation of high-k dielectric in the W/ultrathin HfO2/Si-substrate system

V. I. Rudakov, E. A. Bogoyavlenskaya and Yu. I. Denisenko
Technical Physics Letters 38 (11) 982 (2012)
DOI: 10.1134/S1063785012110120
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Comparison of oxidized/nitrided Zr thin films on Si and SiC substrates

Yew Hoong Wong and Kuan Yew Cheong
Ceramics International 39 S475 (2013)
DOI: 10.1016/j.ceramint.2012.10.117
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Electronic band structure of zirconia and hafnia polymorphs from theGWperspective

Hong Jiang, Ricardo I. Gomez-Abal, Patrick Rinke and Matthias Scheffler
Physical Review B 81 (8) 085119 (2010)
DOI: 10.1103/PhysRevB.81.085119
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Growth temperature dependence of epitaxial Gd2O3 films on Si(111)

G. Niu, B. Vilquin, N. Baboux, et al.
Microelectronic Engineering 86 (7-9) 1700 (2009)
DOI: 10.1016/j.mee.2009.03.107
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Nonvolatile Memory With Nitrogen-Stabilized Cubic-Phase $\hbox{ZrO}_{2}$ as Charge-Trapping Layer

Yung-Hsien Wu, Lun-Lun Chen, Jia-Rong Wu, et al.
IEEE Electron Device Letters 31 (9) 1008 (2010)
DOI: 10.1109/LED.2010.2055530
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Layer structure variations of ultra-thin HfO2 films induced by post-deposition annealing

Wei-En Fu and Yong-Qing Chang
Applied Surface Science 257 (17) 7436 (2011)
DOI: 10.1016/j.apsusc.2011.02.132
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LanthanideN,N-Dimethylaminodiboranates as a New Class of Highly Volatile Chemical Vapor Deposition Precursors

Scott R. Daly, Do Young Kim and Gregory S. Girolami
Inorganic Chemistry 51 (13) 7050 (2012)
DOI: 10.1021/ic201852j
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Phase transformations in oxides induced by swift heavy ions

A. Benyagoub
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 245 (1) 225 (2006)
DOI: 10.1016/j.nimb.2005.11.106
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Investigations on electrical characteristics and reliability properties of MOS capacitors using HfAlOx on n-GaAs substrates

P.S. Das and Abhijit Biswas
Microelectronics Reliability 52 (1) 112 (2012)
DOI: 10.1016/j.microrel.2011.08.005
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Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix

S R C Pinto, M Buljan, L Marques, et al.
Nanotechnology 23 (40) 405605 (2012)
DOI: 10.1088/0957-4484/23/40/405605
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Measurement of Dipoles/Roll-Off /Work Functions by Coupling CV and IPE and Study of Their Dependence on Fabrication Process

Matthieu Charbonnier, Charles Leroux, V. Cosnier, et al.
IEEE Transactions on Electron Devices 57 (8) 1809 (2010)
DOI: 10.1109/TED.2010.2050957
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Cytotoxicity and physicochemical properties of hafnium oxide nanoparticles

James A. Field, Antonia Luna-Velasco, Scott A. Boitano, et al.
Chemosphere 84 (10) 1401 (2011)
DOI: 10.1016/j.chemosphere.2011.04.067
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Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

D. Zade, S. Sato, K. Kakushima, et al.
Microelectronics Reliability 51 (4) 746 (2011)
DOI: 10.1016/j.microrel.2010.11.004
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Improved interface properties of GaN metal-oxide-semiconductor device with non-polar plane and AlN passivation layer

Xian Wu, Renrong Liang, Lei Guo, et al.
Applied Physics Letters 109 (23) 232101 (2016)
DOI: 10.1063/1.4971352
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Effects of anodisation parameters on thin film properties: a review

Y. H. Wong, M. G. Affendy, S. K. Lau, et al.
Materials Science and Technology 33 (6) 699 (2017)
DOI: 10.1080/02670836.2016.1193654
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Thickness-dependent phase evolution and dielectric property of Hf0.5Zr0.5O2 thin films prepared with aqueous precursor

Yong Yan, Dayu Zhou, Chunxia Guo, et al.
Journal of Sol-Gel Science and Technology 77 (2) 430 (2016)
DOI: 10.1007/s10971-015-3871-5
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Revealing the Surface Reactivity of Zirconia by Periodic DFT Calculations

Olga A. Syzgantseva, Monica Calatayud and Christian Minot
The Journal of Physical Chemistry C 116 (11) 6636 (2012)
DOI: 10.1021/jp209898q
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Defect calculations in semiconductors through a dielectric-dependent hybrid DFT functional: The case of oxygen vacancies in metal oxides

Matteo Gerosa, Carlo Enrico Bottani, Lucia Caramella, et al.
The Journal of Chemical Physics 143 (13) 134702 (2015)
DOI: 10.1063/1.4931805
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Lanthanide rare earth oxide thin film as an alternative gate oxide

Kian Heng Goh, A.S.M.A. Haseeb and Yew Hoong Wong
Materials Science in Semiconductor Processing 68 302 (2017)
DOI: 10.1016/j.mssp.2017.06.037
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Transport mechanisms of electrons and holes in dielectric films

K A Nasyrov and V A Gritsenko
Physics-Uspekhi 56 (10) 999 (2013)
DOI: 10.3367/UFNe.0183.201310h.1099
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Behavior of hydrogen in wide band gap oxides

K. Xiong, J. Robertson and S. J. Clark
Journal of Applied Physics 102 (8) 083710 (2007)
DOI: 10.1063/1.2798910
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Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

Qi Xie, Davy Deduytsche, Marc Schaekers, et al.
Applied Physics Letters 97 (11) 112905 (2010)
DOI: 10.1063/1.3490710
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Two photon processes in ZnO quantum dots

Deepti Maikhuri, S.P. Purohit and K.C. Mathur
Superlattices and Microstructures 89 296 (2016)
DOI: 10.1016/j.spmi.2015.11.017
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Developments in High Temperature Corrosion and Protection of Materials

Z. Li and W. Gao
Developments in High Temperature Corrosion and Protection of Materials 521 (2008)
DOI: 10.1533/9781845694258.3.521
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Influence of oxygen vacancies on the dielectric properties of hafnia: First-principles calculations

Eric Cockayne
Physical Review B 75 (9) 094103 (2007)
DOI: 10.1103/PhysRevB.75.094103
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Characterization of Ta-Ti Thin Films by using a Scanning Droplet Cell in Combination with AC Linear Sweep Voltammetry

Mu Fan, Kirill Sliozberg, Fabio La Mantia, et al.
ChemElectroChem 1 (5) 903 (2014)
DOI: 10.1002/celc.201300153
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Electrical Characteristics of Oxidized∕Nitrided Zr Thin Film on Si

Yew Hoong Wong and Kuan Yew Cheong
Journal of The Electrochemical Society 158 (12) H1270 (2011)
DOI: 10.1149/2.106112jes
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High-k dielectrics for future generation memory devices (Invited Paper)

J.A. Kittl, K. Opsomer, M. Popovici, et al.
Microelectronic Engineering 86 (7-9) 1789 (2009)
DOI: 10.1016/j.mee.2009.03.045
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Interfacial structure of epitaxial SrTiO3on Si: experiments and simulations

X F Wang, Juan Wang, Quan Li, et al.
Journal of Physics D: Applied Physics 42 (8) 085409 (2009)
DOI: 10.1088/0022-3727/42/8/085409
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Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

J. Yu, G. Chen, C.X. Li, et al.
Sensors and Actuators A: Physical 172 (1) 9 (2011)
DOI: 10.1016/j.sna.2011.02.021
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MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

S Abermann, G Pozzovivo, J Kuzmik, et al.
Semiconductor Science and Technology 22 (12) 1272 (2007)
DOI: 10.1088/0268-1242/22/12/005
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Improvement on low-temperature deposited HfO2 film and interfacial layer by high-pressure oxygen treatment

Po-Chun Yang, Ting-Chang Chang, Shih-Ching Chen, et al.
Solid-State Electronics 62 (1) 128 (2011)
DOI: 10.1016/j.sse.2011.03.012
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Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1−x high-κ dielectrics on Si

B. B. Triplett, P. T. Chen, Y. Nishi, et al.
Journal of Applied Physics 101 (1) 013703 (2007)
DOI: 10.1063/1.2402974
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Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

Yung-Shao Shen, Kuen-Yi Chen, Po-Chun Chen, Teng-Chuan Chen and Yung-Hsien Wu
Scientific Reports 7 (1) 43659 (2017)
DOI: 10.1038/srep43659
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Physics of Quantum Fluids

Jacques Levrat, Georg Rossbach, Raphaël Butté and Nicolas Grandjean
Springer Series in Solid-State Sciences, Physics of Quantum Fluids 177 201 (2013)
DOI: 10.1007/978-3-642-37569-9_10
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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

B. Raeissi, J. Piscator, O. Engström, et al.
Solid-State Electronics 52 (9) 1274 (2008)
DOI: 10.1016/j.sse.2008.04.005
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Elastic Modulus of HfO2 Thin Film Grown by Atomic Layer Deposition with Wrinkle-based Measurement

Hyun-Ju Choi and Yongseong Kim
Bulletin of the Korean Chemical Society 38 (10) 1246 (2017)
DOI: 10.1002/bkcs.11251
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Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics

Kalya Shubhakar, Kin Leong Pey, Nagarajan Raghavan, et al.
Microelectronic Engineering 109 364 (2013)
DOI: 10.1016/j.mee.2013.03.021
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Structural and band gaps studies of novel Al 2-x Hf x O 3 materials toward MOS applications

Norlida Kamarulzaman, Annie Maria Mahat, Nurhanna Badar and Cezhou Zhao
Materials Chemistry and Physics (2018)
DOI: 10.1016/j.matchemphys.2018.03.024
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Model Surfaces Produced by Atomic Layer Deposition

Rick B. Walsh, Shaun C. Howard, Andrew Nelson, et al.
Chemistry Letters 41 (10) 1247 (2012)
DOI: 10.1246/cl.2012.1247
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On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs

Muhammad Nawaz
Active and Passive Electronic Components 2015 1 (2015)
DOI: 10.1155/2015/651527
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Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression

Cheng-Yi Chang, Fu-Ming Pan, Jian-Siang Lin, et al.
Journal of Applied Physics 120 (23) 234501 (2016)
DOI: 10.1063/1.4972029
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How morphology determines the charge storage properties of Ge nanocrystals in HfO 2

A. Slav, C. Palade, A.M. Lepadatu, et al.
Scripta Materialia 113 135 (2016)
DOI: 10.1016/j.scriptamat.2015.10.028
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Outlook and Challenges of Nano Devices, Sensors, and MEMS

Ling-Xuan Qian
Outlook and Challenges of Nano Devices, Sensors, and MEMS 3 (2017)
DOI: 10.1007/978-3-319-50824-5_1
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Frequency dispersion and dielectric relaxation in postdeposition annealed high-κ erbium oxide metal–oxide–semiconductor capacitors

Robin Khosla and Satinder K. Sharma
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 (1) 012201 (2018)
DOI: 10.1116/1.4995809
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Surface morphology of epitaxial lattice-matched Ba0.7Sr0.3O on Si(001) and vicinal Si(001)-4°[110] substrates

J. Zachariae and H. Pfnür
Surface Science 600 (13) 2785 (2006)
DOI: 10.1016/j.susc.2006.05.002
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High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

Daniel J. Lichtenwalner, Lin Cheng, Sarit Dhar, Anant Agarwal and John W. Palmour
Applied Physics Letters 105 (18) 182107 (2014)
DOI: 10.1063/1.4901259
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Study of the optoelectronic and piezoelectric properties of ZrO2 doped PVDF from quantum chemistry calculations

Albert Veved, Geh Wilson Ejuh and Noël Djongyang
Chinese Journal of Physics 63 213 (2020)
DOI: 10.1016/j.cjph.2019.10.022
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Technological Innovation for Value Creation

Qian Chen, Henrique L. Gomes, Asal Kiazadeh, et al.
IFIP Advances in Information and Communication Technology, Technological Innovation for Value Creation 372 527 (2012)
DOI: 10.1007/978-3-642-28255-3_58
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Study on the dielectric properties of Al2O3/TiO2 sub-nanometric laminates: effect of the bottom electrode and the total thickness

M Ben Elbahri, A Kahouli, B Mercey, et al.
Journal of Physics D: Applied Physics 51 (6) 065101 (2018)
DOI: 10.1088/1361-6463/aaa4df
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Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric

Zhi-Peng Ling, Jun-Tao Zhu, Xinke Liu and Kah-Wee Ang
Scientific Reports 6 (1) 26609 (2016)
DOI: 10.1038/srep26609
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The Structure and Characterization of ZrO2Thin Films Prepared by Liquid Delivery-MOCVD

Rui Li, Dan Xie, Mingming Zhang, et al.
Ferroelectrics 407 (1) 140 (2010)
DOI: 10.1080/00150193.2010.484760
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Influence of annealing temperatures on solution-processed AlInZnO thin film transistors

Yana Gao, Jianguo Lu, Jianhua Zhang and Xifeng Li
Journal of Alloys and Compounds 646 675 (2015)
DOI: 10.1016/j.jallcom.2015.06.049
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Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

Riikka L. Puurunen
Journal of Applied Physics 97 (12) 121301 (2005)
DOI: 10.1063/1.1940727
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High performance organic nonvolatile memory transistors based on HfO2 and poly(α-methylstyrene) electret hybrid charge-trapping layers

W. C. Xu, H. X. He, X. S. Jing, et al.
Applied Physics Letters 111 (6) 063302 (2017)
DOI: 10.1063/1.4997748
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Variable RF capacitor based on a-Si:H (P-doped) multi-length cantilevers

Y Q Fu, S B Milne, J K Luo, et al.
Journal of Physics: Conference Series 34 788 (2006)
DOI: 10.1088/1742-6596/34/1/130
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Localized breakdown in dielectrics and macroscopic charge transport through the whole gate stack: A comparative study

Yi Zheng, Andrew T. S. Wee, Yi Ching Ong, et al.
Applied Physics Letters 92 (1) 012914 (2008)
DOI: 10.1063/1.2830814
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Ethynyl-linked push–pull porphyrin hetero-dimers for near-IR dye-sensitized solar cells: photovoltaic performances versus excited-state dynamics

Yizhu Liu, Hong Lin, Jianbao Li, et al.
Physical Chemistry Chemical Physics 14 (48) 16703 (2012)
DOI: 10.1039/c2cp43165c
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High dielectric constant gate oxides for metal oxide Si transistors

John Robertson
Reports on Progress in Physics 69 (2) 327 (2006)
DOI: 10.1088/0034-4885/69/2/R02
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Thermal stability of HfTaON films prepared by physical vapor deposition

Xu Gaobo and Xu Qiuxia
Journal of Semiconductors 30 (2) 023002 (2009)
DOI: 10.1088/1674-4926/30/2/023002
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Measuring Dipole Inversion in Self-Assembled Nano-Dielectric Molecular Layers

Li Zeng, Riccardo Turrisi, Bo Fu, et al.
ACS Applied Materials & Interfaces 10 (7) 6484 (2018)
DOI: 10.1021/acsami.7b16160
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Composition and structure of hafnia films on silicon

T. P. Smirnova, V. V. Kaichev, L. V. Yakovkina, et al.
Inorganic Materials 44 (9) 965 (2008)
DOI: 10.1134/S0020168508090124
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Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide

A. Fissel, M. Czernohorsky and H. J. Osten
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 24 (4) 2115 (2006)
DOI: 10.1116/1.2214702
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Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

Erick Garcia-Cordero, Francesco Bellando, Junrui Zhang, et al.
ACS Nano 12 (12) 12646 (2018)
DOI: 10.1021/acsnano.8b07413
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Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors

Bhola N. Pal, Bal Mukund Dhar, Kevin C. See and Howard E. Katz
Nature Materials 8 (11) 898 (2009)
DOI: 10.1038/nmat2560
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Toward Quantum FinFET

Arif Khan, Saeed Ganji and S. Noor Mohammad
Lecture Notes in Nanoscale Science and Technology, Toward Quantum FinFET 17 25 (2013)
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Ambipolar leakage suppression in electron–hole bilayer TFET: investigation and analysis

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Growth, strain relaxation properties and high-κ dielectric integration of mixed-anion GaAs1-ySby metamorphic materials

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Complex impedance spectroscopy of high-k HfO2 thin films in Al/HfO2/Si capacitor for gate oxide applications

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Plasma-Enhanced Methane Direct Conversion over Particle-Size Adjusted MOx/Al2O3 (M = Ti and Mg) Catalysts

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Solid-Phase Epitaxy of Perovskite High Dielectric PrAlO3 Films Grown by Atomic Layer Deposition for Use in Two-Dimensional Electronics and Memory Devices

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Effects of N2O Postdeposition Annealing on Metal-Organic Decomposed CeO2 Gate Oxide Spin-Coated on GaN Substrate

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Composite Polymer Electrolytes with Li7La3Zr2O12 Garnet-Type Nanowires as Ceramic Fillers: Mechanism of Conductivity Enhancement and Role of Doping and Morphology

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Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics

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Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates

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Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects

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Enhanced Electroresponse of Alkaline Earth Metal-Doped Silica/Titania Spheres by Synergetic Effect of Dispersion Stability and Dielectric Property

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Phthalocyanine-Based Organic Thin-Film Transistors: A Review of Recent Advances

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Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET

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Handbook of Manufacturing Engineering and Technology

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Aqueous Combustion Synthesis of Aluminum Oxide Thin Films and Application as Gate Dielectric in GZTO Solution-Based TFTs

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A Comparative Study of Nano-SiO2 and Nano-TiO2 Fillers on Proton Conductivity and Dielectric Response of a Silicotungstic Acid–H3PO4–Poly(vinyl alcohol) Polymer Electrolyte

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Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications

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High-Performance Single-Electron Transistor Based on Metal–Organic Complex of Thiophene: First Principle Study

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A Cost-Effective $\hbox{Ni/Nb}_{2}\hbox{O}_{5}\hbox{/} \hbox{Al}_{2}\hbox{O}_{3}\hbox{/}\hbox{Ni}_{2}\hbox{Si}$ Metal–Insulator–Metal Capacitor Processed at 300 $^{\circ}\hbox{C}$ Using Laser Annealing and a Fully Silicided Amorphous Silicon Bottom Electrode

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Ge nanocrystals with highly uniform size distribution deposited on alumina at room temperature by pulsed laser deposition: structural, morphological, and charge trapping properties

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Optical Line Width Broadening Mechanisms at the 10 kHz Level in Eu3+:Y2O3 Nanoparticles

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Stress and Phase Engineered ZrO2/Ge for High-k Dielectric Applications

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Origin of Abnormal Dielectric Behavior and Chemical States in Amorphous CaCu3Ti4O12 Thin Films on a Flexible Polymer Substrate

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On the Band Alignment and Fermi Level Pinning at Compound Semiconductor Interfaces

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Probing Semiconductor/Insulator Heterostructures Through Electron Spin Resonance of Point Defects: Interfaces, Interlayers, and Stress

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Protons in Oxysulfides, Oxysulfates, and Sulfides: A First-Principles Study of La2O2S, La2O2SO4, SrZrS3, and BaZrS3

Jonathan M. Polfus, Truls Norby and Rune Bredesen
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Kavindra Kandpal and Navneet Gupta
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Electrical Properties of Ge pMOSFETs With Ultrathin EOT HfO₂/AlOₓ/GeOₓ Gate-Stacks and NiGe Metal Source/Drain

Rui Zhang, Junkang Li and Xiao Yu
IEEE Transactions on Electron Devices 1 (2017)
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Rigorous numerical modeling of scattering-type scanning near-field optical microscopy and spectroscopy

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Applied Physics Letters 111 (22) 223110 (2017)
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High-density remote plasma sputtering of high-dielectric-constant amorphous hafnium oxide films

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Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric

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An approach to enhance memory retention capacity in MFIS structures using different insulating buffer layer

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Transmission line pulse (TLP) as integrative method for the investigation of ultra-fast trapping mechanisms on high-k MIM

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Ultra-thin hafnium oxide coatings grown by atomic layer deposition: hydrophobicity/hydrophilicity over time

R J Martín-Palma and Carlo G Pantano
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Atomistic simulations of displacement cascades in Y2O3 single crystal

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Journal of Nuclear Materials 454 (1-3) 96 (2014)
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Hydrolysis of ZrCl4and HfCl4: The Initial Steps in the High-Temperature Oxidation of Metal Chlorides to Produce ZrO2and HfO2

Zongtang Fang and David A. Dixon
The Journal of Physical Chemistry C 117 (15) 7459 (2013)
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Junctionless Tunnel Field Effect Transistor

Bahniman Ghosh and Mohammad Waseem Akram
IEEE Electron Device Letters 34 (5) 584 (2013)
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A Dual-Gate Graphene FET Model for Circuit Simulation—SPICE Implementation

Ime J. Umoh, Tom J. Kazmierski and Bashir M. Al-Hashimi
IEEE Transactions on Nanotechnology 12 (3) 427 (2013)
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Novel Photo-Defined Polymer-Enhanced Through-Silicon Vias for Silicon Interposers

Paragkumar A. Thadesar and Muhannad S. Bakir
IEEE Transactions on Components, Packaging and Manufacturing Technology 3 (7) 1130 (2013)
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Effect of Space Radiation on the Leakage Current of MEMS Insulators

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IEEE Transactions on Nuclear Science 60 (4) 3074 (2013)
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Electromagnetic Performance of RF NEMS Graphene Capacitive Switches

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IEEE Transactions on Nanotechnology 13 (1) 70 (2014)
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Improved Performance of Amorphous InGaZnO Thin-Film Transistor With $\hbox{Ta}_{2}\hbox{O}_{5}$ Gate Dielectric by Using La Incorporation

L. X. Qian, X. Z. Liu, C. Y. Han and P. T. Lai
IEEE Transactions on Device and Materials Reliability 14 (4) 1056 (2014)
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Impact of Uniaxial Strain on Random Telegraph Noise in High- $k$ /Metal Gate pMOSFETs

Po-Chin Huang, Jone F. Chen, Shih Chang Tsai, et al.
IEEE Transactions on Electron Devices 62 (3) 988 (2015)
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Intersublevel Photoabsorption and Photoelectric Processes in ZnO Quantum Dot Embedded in $\hbox{HfO}_{2}$ and AlN Matrices

D. Maikhuri, S. P. Purohit and K. C. Mathur
IEEE Photonics Journal 6 (5) 1 (2014)
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A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

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Biodegradable Junctionless Transistors With Extremely Simple Structure

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Applied Physics Letters 103 (2) 023113 (2013)
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UV-Assisted Low Temperature Oxide Dielectric Films for TFT Applications

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Characterizing the Charge Trapping across Crystalline and Amorphous Si/SiO 2 /HfO 2 Stacks from First-Principle Calculations

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Study of molar ratio on the characteristics of metal–organic decomposed LaxCe1−xOz film as a metal reactive oxide on Si substrate

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HfO2/Ti Interface Mediated Conductive Filament Formation in RRAM: An Ab Initio Study

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IEEE Transactions on Electron Devices 65 (2) 507 (2018)
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Electron beam induced local crystallization of HfO2 nanopores for biosensing applications

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Electrically tunable perfect light absorbers as color filters and modulators

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Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors

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Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier

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Kinetic Monte Carlo of transport processes in Al/AlOx/Au-layers: Impact of defects

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Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations

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Preparation and characterization of Al2O3 film deposited by RF sputtering and plasma enhanced atomic layer deposition

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Improvement of the electro-optical properties of nematic liquid crystals doped with strontium titanate nanoparticles at various doping concentrations

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Germanium Based Field-Effect Transistors: Challenges and Opportunities

Patrick Goley and Mantu Hudait
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Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process

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Bolong Huang
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Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30 (1) 01A130 (2012)
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Improving the ALD-grown Y 2 O 3 /Ge interface quality by surface and annealing treatments

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Applied Surface Science 369 377 (2016)
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Structural and Electrical Properties of Ta ax La(1−a)x O y Thin Films

Zahra Khorshidi, Ali Bahari and Reza Gholipur
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Analysis of temperature and wave function penetration effects in nanoscale double-gate MOSFETs

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A novel particle separation method based on induced-charge electro-osmotic flow and polarizability of dielectric particles

Fang Zhang and Dongqing Li
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Electrical and optical properties of nanocrystalline yttrium-doped hafnium oxide thin films

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Local Dielectric Property of Cubic, Tetragonal, and Monoclinic Hafnium Oxides

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Japanese Journal of Applied Physics 51 (3R) 031101 (2012)
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Estimation of step-by-step induced stress in a sequential process integration of nano-scale SOS MOSFETs with high-kgate dielectrics

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A high performance HfSiON/TaN NMOSFET fabricated using a gate-last process

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High-pressure lattice dynamics and thermodynamics in BaO

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Lanthanum-Zirconate and Lanthanum-Aluminate Based High-κ Dielectric Stacks on Silicon Substrates

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Electronic Properties of Atomic-Layer-Deposited Al[sub 2]O[sub 3]/Thermal-Nitrided SiO[sub 2] Stacking Dielectric on 4H SiC

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Electronic structure of aluminum oxide: ab initio simulations ofαandγphases and comparison with experiment for amorphous films

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The European Physical Journal Applied Physics 52 (3) 30501 (2010)
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The role of silicon alloying addition on the pitting corrosion resistance of an Al-12wt.%Si alloy

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Comparative electron spin resonance study of epi-Lu2O3/(111)Si and a-Lu2O3/(100)Si interfaces: Misfit point defects

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Effects of substrate doping on Gd2O3(100)/Si(100) heterostructure

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (2) 021509 (2013)
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Ab initio simulation of the electronic structure of δ-Ta2O5 with oxygen vacancy and comparison with experiment

M. V. Ivanov, T. V. Perevalov, V. Sh. Aliev, V. A. Gritsenko and V. V. Kaichev
Journal of Experimental and Theoretical Physics 112 (6) 1035 (2011)
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M. W. Akram, Bahniman Ghosh, Punyasloka Bal and Partha Mondal
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UV-protection properties of electrospun polyacrylonitrile nanofibrous mats embedded with MgO and Al2O3 nanoparticles

Saeed Dadvar, Hossein Tavanai and Mohammad Morshed
Journal of Nanoparticle Research 13 (10) 5163 (2011)
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Thermal oxidation and nitridation of sputtered Zr thin film on Si via N2O gas

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Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics

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physica status solidi (b) 251 (3) 569 (2014)
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Amorphous hafnium silicates: structural, electronic and dielectric properties

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Monolayer FePt nanocrystal self-assembly embedded into atomic-layer-deposited Al2O3 films for nonvolatile memory applications

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A study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator

Gang Chen, Jerry Yu and P.T. Lai
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Electrochemical and surface analyses of nanostructured Ti–24Nb–4Zr–8Sn alloys in simulated body solution

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From amorphous phase separations to nanostructured materials in sol–gel derived ZrO2:Eu3+/SiO2 and ZnO/SiO2 composites

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In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates

K. Devloo-Casier, J. Dendooven, K. F. Ludwig, et al.
Applied Physics Letters 98 (23) 231905 (2011)
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Insulator–metal transition of VO2ultrathin films on silicon: evidence for an electronic origin by infrared spectroscopy

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Journal of Physics: Condensed Matter 25 (44) 445402 (2013)
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BaTiO3Integration with Nanostructured Epitaxial (100), (110), and (111) Germanium for Multifunctional Devices

Mantu K. Hudait, Yan Zhu, Nikhil Jain, et al.
ACS Applied Materials & Interfaces 5 (21) 11446 (2013)
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Defect passivation in HfO2 gate oxide by fluorine

K. Tse and J. Robertson
Applied Physics Letters 89 (14) 142914 (2006)
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Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors

Christophe Avis, Youn Goo Kim and Jin Jang
Journal of Materials Chemistry 22 (34) 17415 (2012)
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Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction

A. Proessdorf, M. Niehle, M. Hanke, et al.
Applied Physics Letters 105 (2) 021601 (2014)
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Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers

Chien-Wei Lee and Jenn-Gwo Hwu
AIP Advances 3 (10) 102123 (2013)
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Morphology and Composition of Selected High-k Materials and Their Relevance to Dielectric Properties of Thin Films

J. Dąbrowski, G. Lippert, L. Oberbeck, et al.
Journal of The Electrochemical Society 155 (5) G97 (2008)
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ALD deposited ZrO2 ultrathin layers on Si and Ge substrates: A multiple technique characterization

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Microelectronic Engineering 112 208 (2013)
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J.H. Choi, Y. Mao and J.P. Chang
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First-principles study of Zintl aluminide SrAl2

Alexander Slepko and Alexander A. Demkov
Physical Review B 85 (19) (2012)
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Electro-optical modulation of a silicon waveguide with an “epsilon-near-zero” material

Alok P. Vasudev, Ju-Hyung Kang, Junghyun Park, Xiaoge Liu and Mark L. Brongersma
Optics Express 21 (22) 26387 (2013)
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Defect states in the high-dielectric-constant gate oxide LaAlO3

K. Xiong, J. Robertson and S. J. Clark
Applied Physics Letters 89 (2) 022907 (2006)
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Review on one-dimensional nanostructures prepared by electrospinning and atomic layer deposition

Imre Miklós Szilágyi and Dávidné Nagy
Journal of Physics: Conference Series 559 012010 (2014)
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Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction

M. Kuzmin, P. Laukkanen, M. Yasir, et al.
Physical Review B 92 (16) (2015)
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Thin Films of High-kOxides and ZnO for Transparent Electronic Devices

Sylwia Gieraltowska, Lukasz Wachnicki, Bartlomiej S. Witkowski, Elzbieta Guziewicz and Marek Godlewski
Chemical Vapor Deposition 19 (4-6) 213 (2013)
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Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application

Rajeswar Panja, Sourav Roy, Debanjan Jana and Siddheswar Maikap
Nanoscale Research Letters 9 (1) 692 (2014)
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Electronic properties of the Zr–ZrO2–SiO2–Si(100) gate stack structure

C. C. Fulton, G. Lucovsky and R. J. Nemanich
Journal of Applied Physics 99 (6) 063708 (2006)
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La2O3 Nano powders by mixture of fuels approach through chemical combustion for dielectric studies

G Nithesh Sharma, K Venkateswara Rao, V Sesha Sai Kumar, et al.
IOP Conference Series: Materials Science and Engineering 73 012099 (2015)
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Electrical and reliability characteristics of polycrystalline silicon thin-film transistors with high-κ Eu2O3 gate dielectrics

Li-Chen Yen, Chia-Wei Hu, Tsung-Yu Chiang, Tien-Sheng Chao and Tung-Ming Pan
Applied Physics Letters 100 (17) 173509 (2012)
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Nanoscale investigations: Surface potential of rare-earth oxide (Re2O3) thin films by kelvin probe force microscopy for next generation CMOS technology

Pawan Kumar, Robin Khosla and Satinder K. Sharma
Surfaces and Interfaces 4 69 (2016)
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Ink-Jet-Printed Organic Thin-Film Transistors for Low-Voltage-Driven CMOS Circuits With Solution-Processed AlO_X Gate Insulator

Sung Hoon Kim, Sun Hee Lee, Youn Goo Kim and Jin Jang
IEEE Electron Device Letters 34 (2) 307 (2013)
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High dielectric material dependence of carbon nanotube field effect transistor considering non-ballistic conduction

Nirjhor Tahmidur Rouf, Ashfaqul Haq Deep, Mahmudul Hasan, et al.
Micro & Nano Letters 9 (10) 620 (2014)
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Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers

V. V. Afanas’ev, A. Stesmans, G. Mavrou and A. Dimoulas
Applied Physics Letters 93 (10) 102115 (2008)
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Phase transition in sputtered HfO2 thin films: A qualitative Raman study

G.S. Belo, F. Nakagomi, A. Minko, et al.
Applied Surface Science 261 727 (2012)
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First-principles calculations of electronic and optical properties of Mn-doped cubic HfO2

Yu-Fen Zhang, Hao Ren, Zhi-Tao Hou, Cheng Wang and Shuai Zhao
Journal of Alloys and Compounds 609 107 (2014)
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The initial atomic layer deposition of HfO2∕Si(001) as followed in situ by synchrotron radiation photoelectron spectroscopy

Massimo Tallarida, Konstantin Karavaev and Dieter Schmeisser
Journal of Applied Physics 104 (6) 064116 (2008)
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Electron spin resonance observation of an interfacial GePb1-type defect in SiO2/(100)Si1−xGex/SiO2/Si heterostructures

A Stesmans, P Somers and V V Afanas’ev
Journal of Physics: Condensed Matter 21 (12) 122201 (2009)
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Electronic structure of bulk and defect α- and γ-Al2O3

T.V. Perevalov, A.V. Shaposhnikov and V.A. Gritsenko
Microelectronic Engineering 86 (7-9) 1915 (2009)
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Band alignment of atomic layer deposited (ZrO2)x(SiO2)1−x gate dielectrics on Si (100)

Dahlang Tahir, Eun Kyoung Lee, Suhk Kun Oh, et al.
Applied Physics Letters 94 (21) 212902 (2009)
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Characterization of Semiconductor Heterostructures and Nanostructures

Andre Stesmans and Valery V. Afanas'ev
Characterization of Semiconductor Heterostructures and Nanostructures 435 (2008)
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Bilayer Organic–Inorganic Gate Dielectrics for High-Performance, Low-Voltage, Single-Walled Carbon Nanotube Thin-Film Transistors, Complementary Logic Gates, and p–n Diodes on Plastic Substrates

Q. Cao, M.-G. Xia, M. Shim and J. A. Rogers
Advanced Functional Materials 16 (18) 2355 (2006)
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Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures

Srikant Jayanti, Xiangyu Yang, Daniel J. Lichtenwalner and Veena Misra
Applied Physics Letters 96 (9) 092905 (2010)
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DIELECTRIC AND INTERFACE STABILITY OF LaSmO3 FILMS

WEITAO SU, QIUHUI ZHUANG, DEXUAN HUO and BIN LI
Surface Review and Letters 19 (06) 1250064 (2012)
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Thermal stability of thin ZrO2 films prepared by a sol-gel process on Si(001) substrates

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Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28 (4) C5B5 (2010)
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AmorphousHfO2andHf1−xSixOvia a melt-and-quench scheme usingab initiomolecular dynamics

Wanderlã L. Scopel, Antônio J. R. da Silva and A. Fazzio
Physical Review B 77 (17) 172101 (2008)
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Remote phonon scattering in field-effect transistors with a high κ insulating layer

B. Laikhtman and P. M. Solomon
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Applied Physics Express 2 (9) 095001 (2009)
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Hock Jin Quah, Kuan Yew Cheong, Zainuriah Hassan and Zainovia Lockman
Journal of Materials Science: Materials in Electronics 22 (6) 583 (2011)
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Chengliang Wang, Lang Jiang and Wenping Hu
Organic Optoelectronics 95 (2013)
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Thickness dependence of the structural and dielectric properties of epitaxial ZrO2films grown by limited reaction sputtering

Y Zhou, K Sasaki, T Kawae and A Morimoto
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Electrical, Structural and Interfacial Characterization of HfO2Films on Si Substrates

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Chinese Physics Letters 28 (8) 086803 (2011)
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ChemCatChem 6 (9) 2626 (2014)
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Chia-Yu Wei, Wen-Chieh Huang, Chih-Kai Yang, Yen-Yu Chang and Yeong-Her Wang
IEEE Electron Device Letters 32 (12) 1755 (2011)
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IEEE Sensors Journal 13 (5) 1534 (2013)
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A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs

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High-mobility BaSnO3thin-film transistor with HfO2gate insulator

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Applied Physics Express 9 (1) 011201 (2016)
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Meng Guo, Teruaki Hayakawa, Masa-aki Kakimoto and Theodore Goodson
The Journal of Physical Chemistry B 115 (46) 13419 (2011)
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Electrochemical and passive characterization of a beta type Ti45Zr38Al17 cast rod in nitric acid medium

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Electrochimica Acta 85 210 (2012)
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Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness

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Journal of Applied Physics 107 (3) 034504 (2010)
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Preparation and properties of BaTiO3/porous oxide composites

V. V. Sydorchuk, S. V. Khalameida, V. P. Klimenko, V. A. Mikheev and V. A. Zazhigalov
Inorganic Materials 48 (9) 925 (2012)
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Field-effect induced tunability in hyperbolic metamaterials

Georgia T. Papadakis and Harry A. Atwater
Physical Review B 92 (18) (2015)
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Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

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Advanced Materials 26 (48) 8198 (2014)
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Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

Wei-En Fu, Chia-Wei Chang, Yong-Qing Chang, Chih-Kai Yao and Jiunn-Der Liao
Applied Surface Science 258 (22) 8974 (2012)
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Trap-assisted tunneling, capacitance–voltage characteristics, and surface properties of Sm2O3 thin film on Si substrate

Kian Heng Goh, A. S. M. A. Haseeb and Yew Hoong Wong
Journal of Materials Science: Materials in Electronics 28 (6) 4725 (2017)
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Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack

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Journal of Rare Earths 31 (4) 395 (2013)
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Atomic structure and thermally induced transformation of the crystalline BaO/Si(100) junction

M. Kuzmin, P. Laukkanen, M. P. J. Punkkinen, et al.
Physical Review B 90 (23) (2014)
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Applied Physics Letters 110 (5) 051603 (2017)
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Yu. O. Volkov, I. V. Kozhevnikov, B. S. Roshchin, E. O. Filatova and V. E. Asadchikov
Crystallography Reports 58 (1) 160 (2013)
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Niladri Pratap Maity, Reshmi Maity, R.K. Thapa and Srimanta Baishya
Superlattices and Microstructures 95 24 (2016)
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Structural and optical characterization of Cr2O3 nanostructures: Evaluation of its dielectric properties

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AIP Advances 4 (2) 027121 (2014)
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Floating Gate Memory With Biomineralized Nanodots Embedded in $\hbox{HfO}_{2}$

Kosuke Ohara, Yosuke Tojo, Ichiro Yamashita, et al.
IEEE Transactions on Nanotechnology 10 (3) 576 (2011)
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Enhanced Capacitance of Composite Anodic ZrO2Films Comprising High Permittivity Oxide Nanocrystals and Highly Resistive Amorphous Oxide Matrix

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ACS Applied Materials & Interfaces 3 (7) 2665 (2011)
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Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon

Yi Zhao, Masahiro Toyama, Koji Kita, Kentaro Kyuno and Akira Toriumi
Applied Physics Letters 88 (7) 072904 (2006)
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Platinum-assisted post deposition annealing of the n-Ge/Y2O3interface

C Zimmermann, O Bethge, B Lutzer and E Bertagnolli
Semiconductor Science and Technology 31 (7) 075009 (2016)
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HfO[sub 2]∕Si interface formation in atomic layer deposition films: An in situ investigation

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27 (1) 300 (2009)
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Xiuyan Li, Takeaki Yajima, Tomonori Nishimura and Akira Toriumi
Applied Physics Express 8 (6) 061304 (2015)
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Quantum-confined nanowires as vehicles for enhanced electrical transport

S Noor Mohammad
Nanotechnology 23 (28) 285707 (2012)
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An integrated high temperature environmental cell for atom probe tomography studies of gas-surface reactions: Instrumentation and results

S. Dumpala, S.R. Broderick, P.A.J. Bagot and K. Rajan
Ultramicroscopy 141 16 (2014)
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Optics Express 25 (11) 12400 (2017)
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Shijie Wang, Yuanping Feng and Alfred C. H. Huan
High-k Gate Dielectrics for CMOS Technology 293 (2012)
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Physical and electrical characterization of atomic-layer-deposited Ru nanocrystals embedded into Al2O3 for memory applications

Min Zhang, Wei Chen, Shi-Jin Ding, et al.
Journal of Physics D: Applied Physics 41 (3) 032007 (2008)
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Chemical Bonding States of Plasma Nitrided High-k/Ge Gate Stack

C. Mahata, T. Das, S. Mallik, M. K. Hota and C. K. Maiti
Electrochemical and Solid-State Letters 14 (4) H167 (2011)
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Reliability of La-Doped Hf-Based Dielectrics nMOSFETs

Chang Yong Kang, P.D. Kirsch, Byoung Hun Lee, Hsing-Huang Tseng and R. Jammy
IEEE Transactions on Device and Materials Reliability 9 (2) 171 (2009)
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Probing defects at interfaces and interlayers of low-dimensional Si/insulator (HfO2; LaAlO3) structures by electron spin resonance

A. Stesmans and V.V. Afanas’ev
Physica B: Condensed Matter 401-402 550 (2007)
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Internal Photoemission Spectroscopy

Valery V. Afanas’ev
Internal Photoemission Spectroscopy 255 (2014)
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Determining the Optimized Layer-by-Layer Film Architecture With Dendrimer/Carbon Nanotubes for Field-Effect Sensors

Marcos A. M. Sousa, Jose R. Siqueira, Andres Vercik, Michael J Schoning and Osvaldo N. Oliveira
IEEE Sensors Journal 17 (6) 1735 (2017)
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LCAO Calculations of (001) Surface Oxygen Vacancy Structure in Y-Doped BaZrO3

A. V. Bandura, R. A. Evarestov and D. D. Kuruch
Integrated Ferroelectrics 123 (1) 1 (2011)
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Atomic and electronic structure of gadolinium oxide

Timofey Viktorovich Perevalov, Andrey Evgenievich Dolbak, Vasilii Aleksandrovich Shvets, et al.
The European Physical Journal Applied Physics 65 (1) 10702 (2014)
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Simulation of Graphene Base Transistors With Bilayer Tunnel Oxide Barrier: Model Calibration and Performance Projection

Valerio Di Lecce, Antonio Gnudi, Elena Gnani, Susanna Reggiani and Giorgio Baccarani
IEEE Electron Device Letters 37 (11) 1489 (2016)
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Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- application

A. Fissel, M. Czernohorsky and H.J. Osten
Superlattices and Microstructures 40 (4-6) 551 (2006)
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Superiority of DFT+U with non-linear core correction for open-shell binary rare-earth metal oxides: a case study of native point defects in cerium oxides

Bolong Huang
Philosophical Magazine 94 (26) 3052 (2014)
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Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties

Shankar Swaminathan, Yun Sun, Piero Pianetta and Paul C. McIntyre
Journal of Applied Physics 110 (9) 094105 (2011)
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Characterization of Semiconductor Heterostructures and Nanostructures

Andre Stesmans and Valery V. Afanas’ev
Characterization of Semiconductor Heterostructures and Nanostructures 685 (2013)
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Band Alignment at Molybdenum Disulphide/Boron Nitride/Aluminum Oxide Interfaces

Jennifer DiStefano, Yu-Chuan Lin, Joshua Robinson, et al.
Journal of Electronic Materials 45 (2) 983 (2016)
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Electronic structure and defects of high dielectric constant gate oxide La2Hf2O7

D. Liu, K. Tse and J. Robertson
Applied Physics Letters 90 (6) 062901 (2007)
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Fabrication of precision integrated capacitors

Jisu Jiang and Paul A. Kohl
Thin Solid Films 634 15 (2017)
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Interface models and processing technologies for surface passivation and interface control in III–V semiconductor nanoelectronics

H. Hasegawa and M. Akazawa
Applied Surface Science 254 (24) 8005 (2008)
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Optimizing the internal electric field distribution of alternating current driven organic light-emitting devices for a reduced operating voltage

Markus Fröbel, Simone Hofmann, Karl Leo and Malte C. Gather
Applied Physics Letters 104 (7) 071105 (2014)
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Effects of oxygen deficiency in the sol–gel ZrOxfilm on the electrical properties of Au/ZrOx/n-type Si/In devices

Wei-Chung Chen, Yow-Jon Lin, Ya-Hui Chen and Hsing-Cheng Chang
Semiconductor Science and Technology 25 (5) 055003 (2010)
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Chemistry of surface nanostructures in lead precursor-rich PbZr0.52Ti0.48O3 sol–gel films

I. Gueye, G. Le Rhun, P. Gergaud, et al.
Applied Surface Science 363 21 (2016)
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Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN

Rathnait D. Long, Aryan Hazeghi, Marika Gunji, Yoshio Nishi and Paul C. McIntyre
Applied Physics Letters 101 (24) 241606 (2012)
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Integration of Amorphous $\hbox{Yb}_{2}\hbox{O}_{3}$ and Crystalline $\hbox{ZrTiO}_{4}$ as Gate Stack for Aggressively Scaled MOS Devices

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Synthesis of germanium nanocrystals in hafnium aluminum oxide matrix

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High-k Gate Dielectrics for CMOS Technology

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High-k Gate Dielectrics for CMOS Technology 31 (2012)
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Solar water oxidation in sputter-deposited nanocrystalline WO3 photoanodes via tuning of Ar:O2 flow rate combinations

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Activation of hole charge carriers and generation of electromotive force in gabbro blocks subjected to nonuniform loading

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Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

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Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths

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Micro & Nano Letters 10 (10) 523 (2015)
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Applied Physics Letters 104 (24) 244103 (2014)
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Interface engineering for high performance graphene electronic devices

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Gate-Stack Engineering in $n$-Type Ultrascaled Si Nanowire Field-Effect Transistors

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Atomic layer deposited zirconium oxide electron injection layer for efficient organic light emitting diodes

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Applied Physics Letters 101 (22) 222114 (2012)
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Optical properties and thermal stability of LaYbO3 ternary oxide for high-k dielectric application

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High-k dielectric Al2O3 nanowire and nanoplate field effect sensors for improved pH sensing

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Biomedical Microdevices 13 (2) 335 (2011)
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Electronic defects in LaAlO3

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Analysis of Off-State Leakage Current Characteristics and Mechanisms of Nanoscale MOSFETs with a High-kGate Dielectric

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Chinese Physics Letters 29 (12) 127301 (2012)
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White light emission from alternating current organic light-emitting devices using high frequency color-mixing

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Optical susceptibilities in singly charged ZnO colloidal quantum dots embedded in different dielectric matrices

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Temperature dependence of electrical transport properties of La4BaCu5−xCoxO13+δconducting oxide thin films

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Applied Physics Letters 93 (10) 103505 (2008)
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Physical Review B 75 (19) 195105 (2007)
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Negative differential resistance in ultrathin Ge-on-insulator FETs

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Oxygen vacancy estimation of high k metal gate using thermal dynamic model

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Band offsets of high K gate oxides on high mobility semiconductors

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Microelectronic Engineering 88 (3) 282 (2011)
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Enhanced thermoelectric performance through carrier scattering at spherical nanoparticles in Bi0.5Sb1.5Te3/Ta2O5 composites

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Dielectrics in Electric Fields, Second Edition 289 (2016)
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Technical Physics 59 (5) 711 (2014)
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Hafnium zirconate gate dielectric for advanced gate stack applications

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Stability of HfO2/SiOx/Si surficial films at ultralow oxygen activity

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Functional Metal Oxides 419 (2013)
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Atomic Layer Deposition of Aluminum Oxide for Surface Passivation of InGaAs∕InP Heterojunction Bipolar Transistors

R. Driad, F. Benkhelifa, L. Kirste, M. Mikulla and O. Ambacher
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Protective layer of AL₂O₃ nanocomposites and surface composition after electrical stress

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Effects of plasma immersion ion nitridation on dielectric properties of HfO2

L. Wang, K. Xue, J. B. Xu, A. P. Huang and Paul K. Chu
Applied Physics Letters 90 (12) 122901 (2007)
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Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices

O. Khaldi, F. Jomni, P. Gonon, C. Mannequin and B. Yangui
Applied Physics A 116 (4) 1647 (2014)
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LanthanideN,N-Dimethylaminodiboranates: Highly Volatile Precursors for the Deposition of Lanthanide-Containing Thin Films

Scott R. Daly, Do Young Kim, Yu Yang, John R. Abelson and Gregory S. Girolami
Journal of the American Chemical Society 132 (7) 2106 (2010)
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Oxygen vacancy in monoclinic HfO2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments

Peter Broqvist and Alfredo Pasquarello
Applied Physics Letters 89 (26) 262904 (2006)
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MOS Devices With High-κ (ZrO$_2$) $_x$(La $_2$O$_3$) $_{1-x}$ Alloy as Gate Dielectric Formed by Depositing ZrO $_2$/La$_2$O $_3$/ZrO$_2$ Laminate and Annealing

Yung-Hsien Wu, Lun-Lun Chen, Rong-Jhe Lyu, et al.
IEEE Transactions on Nanotechnology 11 (3) 483 (2012)
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Sanjay Mathur, Aadesh Pratap Singh, Ralf Müller, et al.
Ceramics Science and Technology 291 (2014)
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Microencapsulation of Moisture-Sensitive CaS:Eu[sup 2+] Particles with Aluminum Oxide

N. Avci, J. Musschoot, P. F. Smet, et al.
Journal of The Electrochemical Society 156 (11) J333 (2009)
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Solvothermal approach for low temperature deposition of aluminium oxide thin films

XiaoFei Duan, Nguyen H. Tran, Nicholas K. Roberts and Robert N. Lamb
Thin Solid Films 518 (15) 4290 (2010)
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Defects in Microelectronic Materials and Devices

J Robertson, K Xiong and K Tse
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Electrostatic Gating of Ultrathin Films

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Annual Review of Materials Research 44 (1) 45 (2014)
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High temperature thermal stability of the HfO2/Ge (100) interface as a function of surface preparation studied by synchrotron radiation core level photoemission

Rajesh Kumar Chellappan, Durga Rao Gajula, David McNeill and Greg Hughes
Applied Surface Science 292 345 (2014)
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Fabrication of polycrystalline aluminum oxide thin films via hydrolysis and hydrothermal reactions in solutions

XiaoFei Duan, Irving Liaw, Nguyen H. Tran and Robert N. Lamb
Thin Solid Films 520 (1) 25 (2011)
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Electrochemical characterization of nanostructured Ti–24Nb–4Zr–8Sn alloy in 3.5% NaCl solution

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International Journal of Hydrogen Energy 39 (30) 17452 (2014)
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Current transport analysis of ZrO2 thin films: Effects of post-deposition annealing

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Journal of the Korean Physical Society 65 (11) 1903 (2014)
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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Yi Zhao, Koji Kita and Akira Toriumi
Applied Physics Letters 96 (24) 242901 (2010)
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Effect of postdeposition annealing on electrical properties of RF-magnetron sputtered CeOx gate on 4H-silicon carbide

SooKiet Chuah, KuanYew Cheong, Zainovia Lockman and Zainuriah Hassan
physica status solidi (a) 208 (8) 1925 (2011)
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Electron-Related Phenomena at the $\hbox{TaN/Al}_{2} \hbox{O}_{3}$ Interface

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Analytical modeling of direct tunneling current through gate stacks for the determination of suitable high-kdielectrics for nanoscale double-gate MOSFETs

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Semiconductor Science and Technology 26 (4) 045002 (2011)
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Atomic layer deposition of scandium-based oxides

Laura Nyns, Judit G. Lisoni, Geert Van den Bosch, Sven Van Elshocht and Jan Van Houdt
physica status solidi (a) 211 (2) 409 (2014)
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Ceramics Science and Technology 291 (2012)
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Fabrication and Characterization of Polymer-Enhanced TSVs, Inductors, and Antennas for Mixed-Signal Silicon Interposer Platforms

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Oxygen vacancy in Al2O3: Photoluminescence study and first-principle simulation

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Thin Solid Films 519 (19) 6319 (2011)
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Passivation of oxygen vacancy states in HfO2 by nitrogen

K. Xiong, J. Robertson and S. J. Clark
Journal of Applied Physics 99 (4) 044105 (2006)
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Progress of High-k Dielectrics Applicable to SONOS-Type Nonvolatile Semiconductor Memories

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Transactions on Electrical and Electronic Materials 11 (4) 155 (2010)
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Physics-based surface potential, electric field and drain current model of aδp+Si1–xGexgate–drain underlap nanoscale n-TFET

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International Journal of Electronics 1 (2016)
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Thermal stability of amorphous LaScO3 films on silicon

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Applied Physics Letters 89 (6) 062902 (2006)
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High-k Gate Dielectrics for CMOS Technology

Yi Zhao
High-k Gate Dielectrics for CMOS Technology 185 (2012)
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Interface-controlled high dielectric constant Al2O3/TiOx nanolaminates with low loss and low leakage current density for new generation nanodevices

Geunhee Lee, Bo-Kuai Lai, Charudatta Phatak, Ram S. Katiyar and Orlando Auciello
Journal of Applied Physics 114 (2) 027001 (2013)
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Interfacial atomic structures, energetics and band offsets of Ge:ZrO2 interfaces

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Journal of Applied Physics 100 (9) 093713 (2006)
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High-temperature thermal stability study of 1 nm Al2O3deposited on InAs surfaces investigated by synchrotron radiation based photoemission spectroscopy

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Band gaps and defect levels in functional oxides

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Thin Solid Films 496 (1) 1 (2006)
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High-K dielectrics for the gate stack

Jean-Pierre Locquet, Chiara Marchiori, Maryline Sousa, Jean Fompeyrine and Jin Won Seo
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The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers

P. Thangadurai, W.D. Kaplan, V. Mikhelashvili and G. Eisenstein
Microelectronics Reliability 49 (7) 716 (2009)
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Formation of thin-film HfO2/Si(100) structures by high-frequency magnetron sputtering

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Russian Microelectronics 40 (6) 383 (2011)
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Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient

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Electronic Materials Letters 8 (1) 47 (2012)
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Control of the Dirac point in graphene by UV light

A. Yurgens, N. Lindvall, J. Sun, Y. Nam and Y. W. Park
JETP Letters 98 (11) 704 (2014)
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Electronic stopping force of 12C, 28Si and 63Cu ions in HfO2 and SiO2 dielectric films

M. Msimanga, C.A. Pineda-Vargas, T. Hlatshwayo, et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 322 54 (2014)
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CMUTs with high-K atomic layer deposition dielectric material insulation layer

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IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 61 (12) 2121 (2014)
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Deposition and post-deposition annealing of thin Y2O3 film on n-type Si in argon ambient

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Materials Chemistry and Physics 130 (3) 1007 (2011)
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Comprehensive Semiconductor Science and Technology

J. Robertson
Comprehensive Semiconductor Science and Technology 132 (2011)
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Soft x-ray photoemission study of the thermal stability of the Al2O3/Ge (100) interface as a function of surface preparation

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Electrical instability in LaLuO3 based metal–oxide–semiconductor capacitors and role of the metal electrodes

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Atomic and electronic structures of lutetium oxide Lu2O3

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O. Engström, I. Z. Mitrovic, S. Hall, et al.
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Ge-Based Nonvolatile Memory Formed on Si Substrate with Ge-Stabilized Tetragonal ZrO2 as Charge Trapping Layer

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Optical Materials 35 (9) 1728 (2013)
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Oxygen deficiency defects in amorphous Al2O3

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Industrial Chemistry of Oxides for Emerging Applications 1 (2018)
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Dielectric constant measurement of zeolite powders by time-domain reflectometry

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Multi-petahertz electron interference in Cr:Al2O3 solid-state material

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Nature Communications 9 (1) (2018)
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Photonic curing of sol–gel derived HfO2 dielectrics for organic field-effect transistors

Kornelius Tetzner, Kurt A. Schroder and Karlheinz Bock
Ceramics International 40 (10) 15753 (2014)
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Intrinsically ionic conductive cellulose nanopapers applied as all solid dielectrics for low voltage organic transistors

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Nature Communications 9 (1) (2018)
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Computed and Experimental Absorption Spectra of the Perovskite CH3NH3PbI3

Xi Zhu, Haibin Su, Rudolph A. Marcus and Maria E. Michel-Beyerle
The Journal of Physical Chemistry Letters 5 (17) 3061 (2014)
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Impact of ultrathin Al2O3 interlayer on thermal stability and leakage current properties of TiO2/Al2O3 stacking dielectrics

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Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 30 (4) 040601 (2012)
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Silicon electro-optic modulator based on an ITO-integrated tunable directional coupler

Jin-Soo Kim and Jin Tae Kim
Journal of Physics D: Applied Physics 49 (7) 075101 (2016)
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R. E. Lake, C. E. Sosolik and J. M. Pomeroy
Physical Review A 87 (6) (2013)
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Bound and resonant impurity states in a narrow gapped armchair graphene nanoribbon

B. S. Monozon and P. Schmelcher
Physical Review B 86 (24) (2012)
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Jiansheng Wu and Clare C. Yu
Physical Review B 84 (17) 174109 (2011)
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Nontrigonal Ge dangling bond interface defect in condensation-grown(100)Si1−xGex/SiO2

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Physical Review B 79 (19) 195301 (2009)
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Electrostatic Modulation of the Superfluid Density in an UltrathinLa2−xSrxCuO4Film

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Physical Review Letters 96 (22) 227002 (2006)
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Mechanism of the monoclinic-to-tetragonal phase transition induced in zirconia and hafnia by swift heavy ions

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Physical Review B 72 (9) 094114 (2005)
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Silizium-Halbleitertechnologie 177 (2019)
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Solar Energy 139 309 (2016)
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Unipolar resistive switching characteristics of pnictogen oxide films: Case study of Sb2O5

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Journal of Applied Physics 112 (10) 104105 (2012)
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Implementation of Low-Power Electronic Devices Using Solution-Processed Tantalum Pentoxide Dielectric

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Japanese Journal of Applied Physics 57 (6) 066501 (2018)
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Electron spin resonance features of the Ge Pb1 dangling bond defect in condensation-grown (100)Si/SiO2/Si1−xGex/SiO2 heterostructures

P. Somers, A. Stesmans, L. Souriau and V. V. Afanas’ev
Journal of Applied Physics 112 (7) 074501 (2012)
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Stress and texture development during sputtering of yttria, zirconia, and yttria stabilized zirconia films on Si substrates

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Journal of Applied Physics 112 (7) 074910 (2012)
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Handbook of Thin Film Deposition 107 (2018)
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Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations

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Applied Physics Letters 90 (25) 252101 (2007)
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Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

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Journal of Applied Physics 112 (1) 014107 (2012)
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First principle study of single electron transistor based on metal-organic complex of dibenzothiophene

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Organic Electronics 53 227 (2018)
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Crystalline phase dependent electrical properties of Mg incorporated tetragonal phase stabilized ZrO 2 high-κ dielectric layer in Si based MOS capacitors

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Materials Science in Semiconductor Processing 81 7 (2018)
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Impact of encapsulation method on the adsorbate induced electrical instability of monolayer graphene

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Defect correlated with positive charge trapping in functional HfO 2 layers on (100)Si revealed by electron spin resonance: Evidence for oxygen vacancy?

A. Stesmans and V.V. Afanas'ev
Microelectronic Engineering 178 112 (2017)
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The peculiarities of light absorption and light emission in Cu-doped Y-stabilized ZrO2 nanopowders

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Applied Nanoscience 9 (5) 965 (2019)
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Controllable P‐ and N‐Type Conversion of MoTe 2 via Oxide Interfacial Layer for Logic Circuits

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Small 15 (28) 1901772 (2019)
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Investigation on the dielectric properties of titanium-loaded ionic liquid-based nano-organosilica as a novel material

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Advanced Powder Technology 29 (3) 813 (2018)
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Improved reliability of breakdown voltage measurement of yttrium oxide coatings by plasma spray

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Ceramics International 45 (17) 22169 (2019)
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Depth resolved band alignments of ultrathin TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 dynamic random access memory capacitors

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Applied Physics Letters 105 (20) 201603 (2014)
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Interface formation energy, bonding, energy band alignment in α-NaYF 4 related core shell models: For future multi-layer core shell luminescence materials

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Journal of Rare Earths 35 (4) 315 (2017)
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Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

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physica status solidi (a) 216 (23) 1900730 (2019)
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NanoScience and Technology, Electrical Atomic Force Microscopy for Nanoelectronics 29 (2019)
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β-Ga2O3-based metal–oxide–semiconductor photodiodes with HfO2 as oxide

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Applied Physics Express 11 (11) 112202 (2018)
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Defect-Free Copolymer Gate Dielectrics for Gating MoS2 Transistors

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The Journal of Physical Chemistry C 122 (23) 12193 (2018)
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Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric

Jingping Xu, Ming Wen, Xinyuan Zhao, et al.
Nanotechnology 29 (34) 345201 (2018)
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Simulation study of gated nanowire InAs/Si Hetero p channel TFET and effects of interface trap

H. Bijo Joseph, Sankalp Kumar Singh, R.M. Hariharan, Yusuf Tarauni and D. John Thiruvadigal
Materials Science in Semiconductor Processing 103 104605 (2019)
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Charge-Trapping Non-Volatile Memories

E. Verrelli and D. Tsoukalas
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Quantum Dot Channel (QDC) Field Effect Transistors (FETs) Configured as Floating Gate Nonvolatile Memories (NVMs)

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Quantitative Analysis of Shape-Sensitive Interaction of a Charged Nanoplate and a Charged Nanowire

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Nano 10 (08) 1550114 (2015)
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Effect of surfactant and mineralizer on the dielectric properties of zirconia nanocrsytals

A. Uma Maheswari, Sreedevi R. Mohan and M. Sivakumar
Applied Surface Science 427 1174 (2018)
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Effects of annealing on electrical performance of multilayer MoS2transistors with atomic layer deposited HfO2gate dielectric

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Applied Physics Express 9 (9) 095202 (2016)
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Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

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Journal of Applied Physics 118 (13) 134504 (2015)
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PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases

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Band alignment and interfacial chemical structure of the HfLaO/InGaZnO4 heterojunction investigated by x-ray photoelectron spectroscopy

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Effects of post-deposition annealing time in oxygen ambient on Y2O3 film deposited on silicon substrate

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Junctionless Tunnel Field Effect Transistor with Nonuniform Doping

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Electronic properties of hafnium oxide: A contribution from defects and traps

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High-ĸ dielectric oxide as an interfacial layer with enhanced photo-generation for Gr/Si solar cells

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Carbon 125 56 (2017)
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Applied Physics Letters 113 (1) 011102 (2018)
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Radiation Effects and Defects in Solids 170 (6) 510 (2015)
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A new grounded lamination gate (GLG) for diminished fringe-capacitance effects in high-/spl kappa/ gate-dielectric MOSFETs

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Channel Hot-Carrier Degradation in Short-Channel Transistors With High- $k$/Metal Gate Stacks

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Nonlinear Optical Properties of Si Nanodot in ${\rm Al}_{2}{\rm O}_{3}$ Matrix

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Auger electron spectroscopy study of semiconductor surfaces: Effect of cleaning in inert atmosphere

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Transparent conducting oxides for electro-optical plasmonic modulators

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Physical and electrical properties of thermal oxidized Sm2O3 gate oxide thin film on Si substrate: Influence of oxidation durations

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Interface and electrical properties of ultra-thin HfO2 film grown by radio frequency sputtering

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Computation of Dielectric Response in Molecular Solids for High Capacitance Organic Dielectrics

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Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

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Applied Physics Letters 104 (8) 082908 (2014)
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Current–voltage and low-frequency noise analysis of heterojunction diodes with various passivation layers

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Dielectric Engineering of Nanostructured Layers to Control the Transport of Injected Charges in Thin Dielectrics

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The structure of the SiO2∕Si(100) interface from a restraint-free search using computer simulations

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Applied Physics Letters 88 (1) 012101 (2006)
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OPTICAL VIBRATION MODES IN SPHERICAL CORE-SHELL QUANTUM DOTS

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Optical Properties of Nonstoichiometric Tantalum Oxide TaOx (x < 5/2) According to Spectral-Ellipsometry and Raman-Scattering Data

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Stored Coulomb Self-Energy of a Uniformly Charged Rectangular Plate

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Advances in Mathematical Physics 2016 1 (2016)
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Band offsets, Schottky barrier heights, and their effects on electronic devices

John Robertson
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Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate

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Reduction of interfacial SiO2 at HfO2/Si interface with Ta2O5 cap

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Journal of Applied Physics 114 (1) 014106 (2013)
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Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

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Applied Physics Letters 103 (20) 201607 (2013)
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Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

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Applied Physics Letters 103 (19) 192904 (2013)
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Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiOx/W cross-point structure

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Growth and properties of crystalline barium oxide on the GaAs(100) substrate

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Applied Physics Letters 103 (19) 191601 (2013)
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Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses

Weichun Luo, Hong Yang, Wenwu Wang, et al.
Applied Physics Letters 103 (18) 183502 (2013)
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Investigation of the gate oxide leakage current of low temperature formed hafnium oxide films

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Journal of Applied Physics 113 (11) 114103 (2013)
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Band offsets of nitrided ultrathin hafnium silicate films

N. T. Barrett, O. Renault, P. Besson, Y. Le Tiec and F. Martin
Applied Physics Letters 88 (16) 162906 (2006)
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Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics

Eun Ji Kim, Michael Shandalov, Krishna C. Saraswat and Paul C. McIntyre
Applied Physics Letters 98 (3) 032108 (2011)
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High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition

Flora M. Li, Bernhard C. Bayer, Stephan Hofmann, et al.
Applied Physics Letters 98 (25) 252903 (2011)
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Atomic and electronic structure of amorphous and crystalline hafnium oxide: X-ray photoelectron spectroscopy and density functional calculations

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Journal of Applied Physics 101 (5) 053704 (2007)
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Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices

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Applied Physics Letters 101 (23) 232907 (2012)
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Hot electron transport in Au–HfO2–SiO2–Si structures studied by ballistic electron emission spectroscopy

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Applied Physics Letters 90 (14) 142915 (2007)
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Effect of ionic substitutions on the structure and dielectric properties of hafnia: A first principles study

Eric Cockayne
Journal of Applied Physics 103 (8) 084103 (2008)
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Reduced electron back-injection in Al2O3/AlOx/Al2O3/graphene charge-trap memory devices

Sejoon Lee, Emil B. Song, Sung Min Kim, et al.
Applied Physics Letters 101 (24) 243109 (2012)
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Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

O. Engström, B. Raeissi and J. Piscator
Journal of Applied Physics 103 (10) 104101 (2008)
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Control of interfacial silicate between HfO2 and Si by high concentration ozone

L. Wang, K. Xue, J. B. Xu, A. P. Huang and Paul K. Chu
Applied Physics Letters 88 (7) 072903 (2006)
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Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide

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Applied Physics Letters 100 (1) 014102 (2012)
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Structural and dielectric properties of epitaxial Sm2O3 thin films

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Applied Physics Letters 92 (6) 062905 (2008)
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Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on InP substrates

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Applied Physics Letters 99 (13) 132902 (2011)
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Electron-phonon interaction effects on the direct gap transitions of nanoscale Si films

V. K. Kamineni and A. C. Diebold
Applied Physics Letters 99 (15) 151903 (2011)
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Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators

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Applied Physics Letters 88 (13) 132111 (2006)
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Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

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Applied Physics Letters 99 (23) 232902 (2011)
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Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

Peter Broqvist, Audrius Alkauskas and Alfredo Pasquarello
Applied Physics Letters 92 (13) 132911 (2008)
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Hafnium oxide gate dielectrics on sulfur-passivated germanium

Martin M. Frank, Steven J. Koester, Matthew Copel, et al.
Applied Physics Letters 89 (11) 112905 (2006)
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Single shot measurement of the lifetime of a trapped electron in the gate dielectric of a high-k field effect transistor

M. Ziaur Rahman Khan, D. G. Hasko, M. S. M. Saifullah and M. E. Welland
Applied Physics Letters 93 (19) 193501 (2008)
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Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon

S. Dueñas, H. Castán, H. García, et al.
Journal of Applied Physics 99 (5) 054902 (2006)
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Defect states in the high-dielectric-constant gate oxide HfSiO4

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Journal of Applied Physics 101 (2) 024101 (2007)
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Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

J. Müller, S. Knebel, D. Bräuhaus and U. Schröder
Applied Physics Letters 100 (8) 082905 (2012)
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Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces

V. V. Afanas’ev, A. Stesmans, L. F. Edge, et al.
Applied Physics Letters 88 (3) 032104 (2006)
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Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

Jung-Kyu Lee, Sunghun Jung, Jinwon Park, et al.
Applied Physics Letters 101 (10) 103506 (2012)
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Spectroscopic investigation of the electronic structure of thin atomic layer deposition HfO2 films

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (1) 01A117 (2016)
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Homogeneous pinhole free 1 nm Al2O3 tunnel barriers on graphene

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Applied Physics Letters 101 (20) 203104 (2012)
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Synergistic effect of non-thermal plasma–catalysis hybrid system on methane complete oxidation over Pd-based catalysts

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Chemical Engineering Journal 259 761 (2015)
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Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers

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Applied Physics Letters 100 (10) 102111 (2012)
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Internal photoemission at interfaces of high-κ insulators with semiconductors and metals

V. V. Afanas’ev and A. Stesmans
Journal of Applied Physics 102 (8) 081301 (2007)
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Spectroscopic and electrical properties of atomic layer deposition Al2O3 gate dielectric on surface pretreated Si substrate

Min Xu, Cong-Hui Xu, Shi-Jin Ding, et al.
Journal of Applied Physics 99 (7) 074109 (2006)
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Room Temperature Antiferromagnetic Ordering of Nanocrystalline Tb1.90Ni0.10O3

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Experimental investigation of the electrical properties of atomic layer deposited hafnium-rich silicate films on n-type silicon

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Journal of Applied Physics 100 (9) 094107 (2006)
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Paramagnetic point defects in (100)Si∕LaAlO3 structures: Nature and stability of the interface

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Journal of Applied Physics 102 (3) 034516 (2007)
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Band offsets of high K gate oxides on III-V semiconductors

J. Robertson and B. Falabretti
Journal of Applied Physics 100 (1) 014111 (2006)
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Quadrupole second harmonic generation and sum-frequency generation in ZnO quantum dots

Deepti Maikhuri, S. P. Purohit and K. C. Mathur
AIP Advances 5 (4) 047115 (2015)
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Effect of Al and Y incorporation on the structure of HfO2

X. F. Wang, Quan Li and M. S. Moreno
Journal of Applied Physics 104 (9) 093529 (2008)
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Effects of Ta incorporation in La2O3 gate dielectric of InGaZnO thin-film transistor

L. X. Qian, P. T. Lai and W. M. Tang
Applied Physics Letters 104 (12) 123505 (2014)
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Phase control of HfO2-based dielectric films for higher-k materials

Jae Ho Lee, Il-Hyuk Yu, Sang Young Lee and Cheol Seong Hwang
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32 (3) 03D109 (2014)
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Memcapacitive characteristics in reactive-metal (Mo, Al)/HfOX/n-Si structures through migration of oxygen by applied voltage

Paul Yang, Young Jun Noh, Yoon-Jae Baek, et al.
Applied Physics Letters 108 (5) 052108 (2016)
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Effects of ozone oxidation on interfacial and dielectric properties of thin HfO2 films

L. Wang, Paul K. Chu, Andre Anders and Nathan W. Cheung
Journal of Applied Physics 104 (5) 054117 (2008)
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Multicolor and near-infrared electroluminescence from the light-emitting devices with rare-earth doped TiO2 films

Chen Zhu, Chunyan Lv, Zhifei Gao, et al.
Applied Physics Letters 107 (13) 131103 (2015)
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Thermally stable voltage-controlled perpendicular magnetic anisotropy in Mo|CoFeB|MgO structures

Xiang Li, Guoqiang Yu, Hao Wu, et al.
Applied Physics Letters 107 (14) 142403 (2015)
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Growth of high-density Ir nanocrystals by atomic layer deposition for nonvolatile nanocrystal memory applications

Xiao-Jie Liu, Lin Zhu, Xue-Fei Li, et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32 (4) 042201 (2014)
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Interplay between gadolinium dopants and oxygen vacancies in HfO2: A density functional theory plus Hubbard U investigation

Wei Zhang and Z. F. Hou
Journal of Applied Physics 115 (12) 124104 (2014)
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Substrate dielectric effects on graphene field effect transistors

Zhaoying Hu, Dhiraj Prasad Sinha, Ji Ung Lee and Michael Liehr
Journal of Applied Physics 115 (19) 194507 (2014)
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Thermal annealing effect on the interface structure of high-κ LaScO3 on silicon

F. Liu and G. Duscher
Applied Physics Letters 91 (15) 152906 (2007)
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Analysis of electrically biased paramagnetic defect centers in HfO2 and HfxSi1−xO2/(100)Si interfaces

P. T. Chen, B. B. Triplett, J. J. Chambers, et al.
Journal of Applied Physics 104 (1) 014106 (2008)
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Heterogate junctionless tunnel field-effect transistor: future of low-power devices

Shiromani Balmukund Rahi, Pranav Asthana and Shoubhik Gupta
Journal of Computational Electronics 16 (1) 30 (2017)
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Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB|MgO interface

Xiang Li, Kevin Fitzell, Di Wu, et al.
Applied Physics Letters 110 (5) 052401 (2017)
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An Investigation of Electrical and Dielectric Parameters of Sol–Gel Process Enabled $\beta $ -Ga2O3 as a Gate Dielectric Material

Ahmet Kaya, Howard Mao, Jianyi Gao, et al.
IEEE Transactions on Electron Devices 64 (5) 2047 (2017)
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Superior NBTI in High- $k$ SiGe Transistors–Part I: Experimental

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IEEE Transactions on Electron Devices 64 (5) 2092 (2017)
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Decoupling the Effects of Mass Density and Hydrogen-, Oxygen-, and Aluminum-Based Defects on Optoelectronic Properties of Realistic Amorphous Alumina

Vanessa Riffet and Julien Vidal
The Journal of Physical Chemistry Letters 8 (11) 2469 (2017)
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Synaptic transistor with a reversible and analog conductance modulation using a Pt/HfOx/n-IGZO memcapacitor

Paul Yang, Hyung Jun Kim, Hong Zheng, et al.
Nanotechnology 28 (22) 225201 (2017)
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Real-time atomistic observation of structural phase transformations in individual hafnia nanorods

Bethany M. Hudak, Sean W. Depner, Gregory R. Waetzig, et al.
Nature Communications 8 (1) 15316 (2017)
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A Suspended Six-Port Transformer-Based Power Divider for 2.4 GHz Applications

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Micromachines 8 (4) 118 (2017)
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Effect of high-k dielectric on the performance of Si, InAs and CNT FET

Bhubon Chandra Mech and Jitendra Kumar
Micro & Nano Letters 12 (9) 624 (2017)
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Science and technology of diamond films grown on HfO2 interface layer for transformational technologies

Jesus J. Alcantar-Peña, Geunhee Lee, Erika M.A. Fuentes-Fernandez, et al.
Diamond and Related Materials 69 221 (2016)
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Nitrogen plasma-induced HfSiON film growth from Hf nanoscale islands on SiO2/Si

Takeshi Kitajima, Ryosuke Kage and Toshiki Nakano
Journal of Vacuum Science & Technology A 36 (5) 051301 (2018)
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Structural and band gaps studies of novel Al2-xHfxO3 materials toward MOS applications

Norlida Kamarulzaman, Annie Maria Mahat, Nurhanna Badar and Ce Zhou Zhao
Materials Chemistry and Physics 216 237 (2018)
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Physical and optical properties of HfO 2 NPs – Synthesis and characterization in finding its feasibility in opto-electronic devices

J. Manikantan, H.B. Ramalingam, B. Chandar Shekar, et al.
Advanced Powder Technology 28 (7) 1636 (2017)
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Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics

Jian Zhu, Xiaolong Liu, Michael L. Geier, et al.
Advanced Materials 28 (1) 63 (2016)
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Memory improvement with high-k buffer layer in metal/ SrBi2Nb2O9/Al2O3/silicon gate stack for non-volatile memory applications

Prashant Singh, Rajesh Kumar Jha, Rajat Kumar Singh and B.R. Singh
Superlattices and Microstructures 121 55 (2018)
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Memory performance of MOS structure embedded with laser annealed gold NCs

L. Kastanis, J.L. Spear, Ch. Sargentis, et al.
Solid-State Electronics 148 63 (2018)
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Environmental Science and Engineering, Physics of Semiconductor Devices 555 (2014)
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Intrinsic energy conversions for photon-generation in piezo-phototronic materials: A case study on alkaline niobates

Bolong Huang, Mingzi Sun and Dengfeng Peng
Nano Energy 47 150 (2018)
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Dielectric properties and resistive switching characteristics of lead zirconate titanate/hafnia heterostructures

Y. Espinal, S. P. Alpay, M. Howard and B. M. Hanrahan
Journal of Applied Physics 124 (6) 064103 (2018)
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Influence of film thickness on the dielectric characteristics of hafnium oxide layers

D.A. Golosov, N. Vilya, S.М. Zavadski, et al.
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Structural and electrical properties of Ge-doped ZrO2 thin films grown by atomic layer deposition for high-k dielectrics

Bo-Eun Park, Yujin Lee, Il-Kwon Oh, et al.
Journal of Materials Science 53 (21) 15237 (2018)
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Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors

Masafumi Hirose, Toshihide Nabatame, Kazuya Yuge, et al.
Microelectronic Engineering 216 111040 (2019)
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Nanoscale potential fluctuations in nonstoichiometrics tantalum oxide

Vladimir A Gritsenko, Vladimir A Volodin, Timofey V Perevalov, et al.
Nanotechnology 29 (42) 425202 (2018)
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Optimization of Electrical Parameters of Pocket Doped SOI TFET with L Shaped Gate

Partha Pratim Goswami and Brinda Bhowmick
Silicon (2019)
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Magnetic Tunnel Junctions Based on Ferroelectric Hf0.5Zr0.5O2 Tunnel Barriers

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Physical Review Applied 12 (3) (2019)
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Interconnections between Electronic Structure and Optical Properties of Multilayer Nanolaminate TiAlN/Ag and Al2O3/Ag Coatings

Dmitry Wainstein, Anatoly Kovalev, Vladimir Vakhrushev, Raul Gago and Jose Endrino
Coatings 8 (8) 290 (2018)
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Atomic Layer Deposition and Characterization of Amorphous ErxTi1-xOyDielectric Ultra-Thin Films

Runshen Xu and Christos G. Takoudis
ECS Journal of Solid State Science and Technology 1 (6) N107 (2012)
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Temperature Effects on Nanocrystalline Molybdenum Oxide Embedded ZrHfO High-kNonvolatile Memory Functions

Chi-Chou Lin and Yue Kuo
ECS Journal of Solid State Science and Technology 2 (1) Q16 (2013)
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Al2O3/InGaAs Metal-Oxide-Semiconductor Interface Properties: Impact of Gd2O3and Sc2O3Interfacial Layers by Atomic Layer Deposition

M. Ameen, L. Nyns, S. Sioncke, et al.
ECS Journal of Solid State Science and Technology 3 (11) N133 (2014)
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Atomic Layer Etching of HfO2Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)2and HF

Younghee Lee, Jaime W. DuMont and Steven M. George
ECS Journal of Solid State Science and Technology 4 (6) N5013 (2015)
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Synthesis and Ionic Conductivity Studies of In- and Y-Doped Li6Hf2O7as Solid-State Electrolyte for All-Solid State Li-Ion Batteries

M. Amores, S. A. Corr and E. J. Cussen
Journal of The Electrochemical Society 164 (1) A6395 (2017)
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Cross-Point Resistive Switching Memory and Urea Sensing by Using Annealed GdOxFilm in IrOx/GdOx/W Structure for Biomedical Applications

Pankaj Kumar, Siddheswar Maikap, Sreekanth Ginnaram, et al.
Journal of The Electrochemical Society 164 (4) B127 (2017)
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Oxide-based optical, electrical and magnetic properties switching devices with water-incorporated gate insulator

Takayoshi Katase and Hiromichi Ohta
Japanese Journal of Applied Physics 58 (9) 090501 (2019)
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Improved energy density and charge-discharge efficiency in solution processed highly defined ferroelectric block copolymer-based dielectric nanocomposites

Niels L. Meereboer, Ivan Terzić, Giuseppe Portale and Katja Loos
Nano Energy 64 103939 (2019)
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Reducing the power consumption of two-dimensional logic transistors

Weisheng Li, Hongkai Ning, Zhihao Yu, Yi Shi and Xinran Wang
Journal of Semiconductors 40 (9) 091002 (2019)
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Effect of Interface Structure on the Hydrophobicity, Mechanical and Optical Properties of HfO2/Mo/HfO2 Multilayer Films

P. Dubey, Anil K. Battu, V. Shutthanandan and C. V. Ramana
JOM 71 (10) 3711 (2019)
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High dielectric permittivity of HfO2-based films with (La,Bi,Nb) substitution

Shingo Yoneda, Tadasu Hosokura, Tomoyasu Usui, et al.
Japanese Journal of Applied Physics 57 (11S) 11UF03 (2018)
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Fabrication of Sn@Al2O3 Core-shell Nanoparticles for Stable Nonvolatile Memory Applications

Jong-Hwan Yoon
Materials 12 (19) 3111 (2019)
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Morphology influence in rapid plasma nitriding of hafnium layer for HfSiON film growth

Takeshi Kitajima, Ryosuke Kage and Toshiki Nakano
Journal of Vacuum Science & Technology A 37 (6) 061301 (2019)
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Structural characteristics of samarium oxynitride on silicon substrate

Kian Heng Goh, A.S.M.A. Haseeb and Yew Hoong Wong
Journal of Alloys and Compounds 722 729 (2017)
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Comparison of resistive switching characteristics by using e-gun/sputter deposited SiOx film in W/SiOx/TiN structure and pH/creatinine sensing through iridium electrode

Sourav Roy, Anisha Roy, Rajeswar Panja, et al.
Journal of Alloys and Compounds 726 30 (2017)
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Transition-metal-oxide based functional thin-film device using leakage-free electrolyte

Takayoshi KATASE and Hiromichi OHTA
Journal of the Ceramic Society of Japan 125 (8) 608 (2017)
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Characterization of a Gm-C Filter Based on CNTFETs for Use in Digital Audio Broadcasting Systems

Mir Hamid Rezaei, Ali Nafisi and Ghollamali Alizadeh
Journal of Electronic Materials 48 (11) 7003 (2019)
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Role of thermodynamic miscibility gaps in phase selection in sol-gel synthesis of yttrium silicates

Surendra B. Anantharaman, V.B. Rajkumar, S. Raghunandan, et al.
Journal of the European Ceramic Society 37 (15) 5001 (2017)
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Investigation of CHF3 treatment on the energy band at the MoS2/HfZrO4 heterostructure

Kuilong Li, Zhiwen Li, Yuehua Hong, et al.
Applied Physics Letters 113 (14) 143506 (2018)
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Electronic transport properties of graphene/Al2O3 (0001) interface

M.S. Gusmão, Angsula Ghosh and H.O. Frota
Current Applied Physics 18 (1) 90 (2018)
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Structural and electrical properties of ferroelectric BiFeO3/HfO2 gate stack for nonvolatile memory applications

Nitish Yadav, Kamal Prakash Pandey and Pramod Narayan Tripathi
Journal of Advanced Dielectrics 08 (05) 1850037 (2018)
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New Uses of Micro and Nanomaterials

Cynthia P. Quinteros, Alex Hardtdegen, Mariano Barella, et al.
New Uses of Micro and Nanomaterials (2018)
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Error analysis and frequency selection guidelines for three-frequency correction in MOS capacitors

Xizhen Zhang, Sujuan Zhang, Xiuyu Pan, et al.
Semiconductor Science and Technology 33 (11) 115006 (2018)
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Electrochemical behavior of a gold nanoring electrode microfabricated on a silicon micropillar

Haocheng Yin, Chao Tan, Shabnam Siddiqui and Prabhu U. Arumugam
Sensors and Actuators B: Chemical 281 392 (2019)
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Phase stability, microstructure, and dielectric properties of quaternary oxides In12 Ti10 A2 BO42 (A: Ga or Al; B: Mg or Zn)

Felipe Francisco Castillón-Barraza, Alejandro Durán, Mario Humberto Farías, et al.
Journal of the American Ceramic Society 102 (1) 320 (2019)
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Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique

Vladimir Kolkovsky, Sebastian Scholz, Valery Kolkovsky, Jan-Uwe Schmidt and Rene Heller
Journal of Vacuum Science & Technology B 36 (6) 062901 (2018)
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Capacitive effective thickness of a few nanometers by atomic layer deposition and device performance in Ge gate-all-around fin field effect transistors

Chu-Lin Chu, Bo-Yuan Chen and Yiin-Kuen Fuh
Journal of Micro/Nanolithography, MEMS, and MOEMS 14 (4) 044501 (2015)
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Single- and double-gate synaptic transistor with TaO x gate insulator and IGZO channel layer

Keonwon Beom, Paul Yang, Daehoon Park, et al.
Nanotechnology 30 (2) 025203 (2019)
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Charge Trapping in Hafnium Silicate Films with Modulated Composition and Enhanced Permittivity

Larysa Khomenkova, Xavier Portier, Abdelilah Slaoui and Fabrice Gourbilleau
Advanced Materials Research 854 125 (2013)
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High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO₂

Xiang Yu Yang, Bong Mook Lee and Veena Misra
Materials Science Forum 778-780 557 (2014)
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Post-Deposition Annealing in Nitrous Oxide Ambient of RF-Magnetron Sputtered Y₂O₃ Film on Silicon Substrate

Hock Jin Quah and Kuan Yew Cheong
Advanced Materials Research 1024 360 (2014)
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Metamaterial anti-reflection lining for enhancing transmission of high-permittivity plate

Yongzhi Li, Jiafu Wang, Jie Yang, et al.
Journal of Physics D: Applied Physics 52 (3) 03LT01 (2019)
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Local structural investigation of hafnia-zirconia polymorphs in powders and thin films by X-ray absorption spectroscopy

Tony Schenk, Andris Anspoks, Inga Jonane, et al.
Acta Materialia 180 158 (2019)
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Electrostatic Supercapacitors by Atomic Layer Deposition on Nanoporous Anodic Alumina Templates for Environmentally Sustainable Energy Storage

Luis Fernández-Menéndez, Ana González, Víctor Vega and Víctor de la Prida
Coatings 8 (11) 403 (2018)
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Synthesis of Phosphonic Acid Ligands for Nanocrystal Surface Functionalization and Solution Processed Memristors

Jonathan De Roo, Zimu Zhou, Jiaying Wang, et al.
Chemistry of Materials 30 (21) 8034 (2018)
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Proton Conducting Graphene Oxide/Chitosan Composite Electrolytes as Gate Dielectrics for New-Concept Devices

Ping Feng, Peifu Du, Changjin Wan, Yi Shi and Qing Wan
Scientific Reports 6 (1) 34065 (2016)
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Titanium coverage for plasma-induced uniform HfSiON film from Hf nanoscale islands on SiO2/Si

Takeshi Kitajima, Ryosuke Kage and Toshiki Nakano
Journal of Vacuum Science & Technology A 36 (6) 061304 (2018)
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Ideal p–n Diodes from Single-Walled Carbon Nanotubes for Use in Solar Cells: Beating the Detailed Balance Limit of Efficiency

Prathamesh A. Dhakras, Everett Comfort and Ji Ung Lee
ACS Applied Nano Materials (2019)
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Hetero-Dielectric oxide engineering on dopingless gate all around nanowire MOSFET with Schottky contact source/drain

Agamreet Kaur, Rajesh Mehra and Amit Saini
AEU - International Journal of Electronics and Communications 111 152888 (2019)
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Effect of the interfacial (low-k SiO2 vs high-k Al2O3) dielectrics on the electrical performance of a-ITZO TFT

Taki Eddine Taouririt, Afak Meftah and Nouredine Sengouga
Applied Nanoscience 8 (8) 1865 (2018)
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Charge transport properties of bulk-heterojunction organic solar cells investigated by displacement current measurement technique

Teng Ma, Jinyu Zhang, Daisuke Tadaki, et al.
Organic Electronics 51 269 (2017)
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Charge stability diagram and addition energy spectrum for single-electron transistor based on Ni-dithiolene derivatives

Anu, Anurag Srivastava and Mohd. Shahid Khan
Organic Electronics 59 125 (2018)
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Film materials based on a-SiNx:H with high refractive index obtained by plasma enhanced chemical vapour deposition technology

J. Jaglarz, M. Jurzecka-Szymacha and S. Kluska
Thin Solid Films 669 564 (2019)
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Numerical Simulation and Optimization of An a-ITZO TFT Based on a Bi-Layer Gate Dielectrics

Taki Eddine Taouririt, Afak Meftah and Nouredine Sengouga
Journal of Electronic Materials 48 (2) 1018 (2019)
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Influence of 120 MeV S9+ ion irradiation on structural, optical and morphological properties of zirconium oxide thin films deposited by RF sputtering

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Physics Letters A 383 (9) 898 (2019)
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