High dielectric constant oxides
Eur. Phys. J. Appl. Phys., 28 3 (2004) 265-291
Published online: 2004-12-02
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
289 (2025)
https://doi.org/10.1016/B978-0-443-13523-1.00004-1
Comparative analysis of structure and interfacial electrical properties of transition metal oxide layers grown on GaN using atomic layer deposition
R. Tomašiūnas, M. Mandl, I. Reklaitis, T. Malinauskas, S. Stanionytė, D. Paipulas, R. Ritasalo, S. Taeger, M. Strassburg and K. SakodaSurfaces and Interfaces 60 105982 (2025)
https://doi.org/10.1016/j.surfin.2025.105982
Low-temperature thermal atomic layer deposition of beryllium oxide films using discrete feeding methods
Juyoung Chae, Jonghyun Bae, Yoonseo Jang, Dohwan Jung, Sangoh Han, Prakash R. Sultane, Christopher W. Bielawski and Jungwoo OhApplied Surface Science Advances 27 100740 (2025)
https://doi.org/10.1016/j.apsadv.2025.100740
Design and analysis of graphene slot waveguide micro-ring modulator with high extinction ratio and bandwidth
Mohamad Sadegh Pishvaei and Mohamad Hasan YavariOptics & Laser Technology 181 111953 (2025)
https://doi.org/10.1016/j.optlastec.2024.111953
Insulator-Based Dielectrophoresis for Purifying Semiconductor Industry-Compatible Chemicals with Trace Nanoparticles
Donggyu Lee, Seungyun Lee, Jinhyeok Jang, Jun Young Oh, Younghun Kim, Sam-Jong Choi, Yun Ho Kim and Jihyun KimJACS Au 5 (5) 2342 (2025)
https://doi.org/10.1021/jacsau.5c00307
Observation of interface dipole modulation in an Al2O3/SnOx/SiO2 stack
Yoshiharu Kirihara, Shunichi Ito, Akira Yasui, Ryousuke Ishikawa and Hiroshi NohiraApplied Physics Letters 126 (10) (2025)
https://doi.org/10.1063/5.0259875
Proposal of dual-gate oxide layered with HfO2: Comparative results with SiO2-RadFET
Ercan Yilmaz, Goran Ristić, Rasit Turan, Ozan Yilmaz, Umutcan Gurer, Danijel Danković, Erhan Budak, Miloš Marjanović, Sandra Veljković, Alex Mutale and Aysegul KahramanRadiation Physics and Chemistry 232 112691 (2025)
https://doi.org/10.1016/j.radphyschem.2025.112691
The Electrical Characterization of TeO2-based Metal-Oxide-Semiconductor Devices
Ebru Dönmez, Osman Pakma, Şadan Özden, Nejmettin Avcı, Pınar Özden and İshak. Afşin KariperECS Journal of Solid State Science and Technology 14 (4) 044011 (2025)
https://doi.org/10.1149/2162-8777/adc6ba
Dielectric properties of novel nanocomposites based on PVA incorporating CuO nanoparticles
İbrahim Erol, Aysegul Dere, Mesut Yalcin, Gofur Khamidov, Shehab A. Mansour, Davlat Tukhtaev, Sanjar Tillayev and Fahrettin YakuphanogluJournal of Materials Science: Materials in Electronics 36 (16) (2025)
https://doi.org/10.1007/s10854-025-14942-5
A gallium oxide MESFET transistor with potential barrier layers for high-power and high-frequency applications
Reyhaneh Shiralizadeh Nemati and Ali Asghar OroujiPhysica Scripta 100 (1) 015909 (2025)
https://doi.org/10.1088/1402-4896/ad92c6
Ideal Thickness in 2D van der Waals Multilayers with Vertical Double Side Contacts
Eunji Sim, Suin Seong, Yeongseo Han, Minji Chae, Taesoo Kim, Yujeong Jeong, Dahyun Choi, Hyejin Kim, Min Cheong, Changhyun Ko and Min-Kyu JooACS Applied Materials & Interfaces (2025)
https://doi.org/10.1021/acsami.5c09352
Two-dimensional materials in bioelectronics
Navid RabieeTrAC Trends in Analytical Chemistry 189 118279 (2025)
https://doi.org/10.1016/j.trac.2025.118279
Improved π-Conjugation Structure of Vacuum-Processable Organic Semiconductor Mediated from Molecular Crystal Templates
Hoichang Yang, Suhyun Chung, Yoo Seong Ahn and Kang Don LeeACS Applied Materials & Interfaces 17 (16) 24262 (2025)
https://doi.org/10.1021/acsami.5c04084
Low-Power Energy-Efficient Hetero-Dielectric Gate-All-Around MOSFETs: Enablers for Sustainable Smart City Technology
Ram Devi, Gurpurneet Kaur, Ameeta Seehra, Munish Rattan, Geetika Aggarwal and Michael ShortEnergies 18 (6) 1422 (2025)
https://doi.org/10.3390/en18061422
XGBoost Regression Analysis of Dielectric Properties of Epoxy Resin with Inorganic Hybrid Nanofillers
Piyushkumar Panchal, Bansi Shingala, Sanketsinh Thakor, Prince Jain, Chandan R. Vaja, Anand Joshi, K. N. Shah, V. A. Rana and Jaivik PathakJournal of Macromolecular Science, Part B 64 (3) 347 (2025)
https://doi.org/10.1080/00222348.2024.2347746
Multiparameter Admittance Spectroscopy for Investigating Defects in MoS₂ Thin-Film MOSFETs
Eros Reato, Ardeshir Esteki, Benny Ku, Zhenxing Wang, Michael Heuken, Max C. Lemme and Olof EngströmIEEE Transactions on Electron Devices 72 (3) 1506 (2025)
https://doi.org/10.1109/TED.2025.3527413
Co-sputtering deposition of HfO2 thin films: Insights into Cu and Ag doping effects
Abdullah Akkaya, Osman Kahveci, Sedanur Güler and Enise AyyıldızJournal of Physics and Chemistry of Solids 202 112686 (2025)
https://doi.org/10.1016/j.jpcs.2025.112686
Study of the electrical and structural homogeneity of ultrathin HfO2 films grown by reactive sputtering
M. Sirena and N. HaberkornSolid State Communications 403 115949 (2025)
https://doi.org/10.1016/j.ssc.2025.115949
131 (2025)
https://doi.org/10.1007/978-3-031-89029-1_7
Terahertz field effect in a two-dimensional semiconductor
Tomoki Hiraoka, Sandra Nestler, Wentao Zhang, Simon Rossel, Hassan A. Hafez, Savio Fabretti, Heike Schlörb, Andy Thomas and Dmitry TurchinovichNature Communications 16 (1) (2025)
https://doi.org/10.1038/s41467-025-60588-6
Gate dielectrics for transistors based on two-dimensional transition metal dichalcogenide semiconductors
Han Yan, Lixin Liu, Leyi Loh, Manish Chhowalla and Yan WangAPL Electronic Devices 1 (3) (2025)
https://doi.org/10.1063/5.0275690
SiO2/Si interface defects in HKMG stack fabrication
Shota Nunomura and Yukinori MoritaSurfaces and Interfaces 56 105445 (2025)
https://doi.org/10.1016/j.surfin.2024.105445
Interfaces in two-dimensional transistors: Key to pushing performance and integration
Chang Liu, Shuaiqin Wu, Ying Zhang, Xudong Wang, Junhao Chu and Jianlu WangMaterials Science and Engineering: R: Reports 162 100883 (2025)
https://doi.org/10.1016/j.mser.2024.100883
Energy-Efficient, Scalable Single-Layer MoS2–Based Synaptic Field-Effect Transistors
Jiman Kim, Byeongju Kim, Jiwon Ma, Sang-Yun Lim, Myeong-Hwan Choi, Hyeonu Jeong, Jaehoon Ji, Ji-Hoon Kang, Jiwon Chang, Jiseok Kwon and Tae Joon ParkACS Applied Electronic Materials (2025)
https://doi.org/10.1021/acsaelm.5c00808
Breaking Barriers: Centimeter‐Sized Single Layer WSe2 by Gold‐Mediated Exfoliation for Ambipolar Field Effect Transistors at Ultra‐Low Voltages
Sarah Grützmacher, Wenkai Liu, Max Heyl, Patrick Amsalem, Norbert Koch, Emil J. W. List‐Kratochvil and Giovanni LigorioAdvanced Electronic Materials (2025)
https://doi.org/10.1002/aelm.202500188
Enhancing Vapour Compression Refrigeration System Performance by Dispersing TiO2 and SiO2 Nanoparticles in Compressor Lubricant and Retrofitted with Refrigerant R600a: An Experimental Approach
Navdeep Kumar, Pardeep Kumar and Khushdeep GoyalTransactions of the Indian National Academy of Engineering 10 (2) 471 (2025)
https://doi.org/10.1007/s41403-025-00531-9
Prediction of New Crystal of Titanium Oxides and Property Calculations Using Structure Prediction Software and First-Principles Theory
Jinrong Huo, Pengfei Liu, Yuxin Tang, Kai Zhang and Chaozheng HeThe Journal of Physical Chemistry C 129 (19) 9152 (2025)
https://doi.org/10.1021/acs.jpcc.5c00915
Influence Mechanism of Vertical Mirror Symmetry on Out-of-Plane Dielectric Properties in 2D Materials
Yang Hu, Hengze Qu, Xuemin Hu, Wenhan Zhou and Shengli ZhangThe Journal of Physical Chemistry Letters 16 (17) 4124 (2025)
https://doi.org/10.1021/acs.jpclett.5c00608
Characteristics of aluminum-doped SnO2 in various positions using super-cycle ALD
Jangho Bae and Hyeongtag JeonNanotechnology 36 (18) 185701 (2025)
https://doi.org/10.1088/1361-6528/adc4ef
SiO2/Si stack’s damage in plasma processing: Ar, O2, and H2 gas species effect on damage formation, structure, and recovery
Shota Nunomura, Takayoshi Tsutsumi, Kunihiro Kamataki, Ryuji Oshima, Masaharu Shiratani and Masaru HoriSurfaces and Interfaces 62 106194 (2025)
https://doi.org/10.1016/j.surfin.2025.106194
Synthesis, characterization and dielectric properties evaluation of NiO-Co3O4 nanocomposite
Jalal Amir, Sheraz Muhammad, Muhammad Kashif, Azmat Ali Khan, Misbah Gul, Hao Sun, Muffarih Shah, Shohreh Azizi and Malik MaazaJournal of the Iranian Chemical Society 22 (1) 63 (2025)
https://doi.org/10.1007/s13738-024-03129-0
Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering
Richard Drevet, Pavel Souček, Pavel Mareš, Pavel Ondračka, Matej Fekete, Martin Dubau and Petr VašinaSurface and Coatings Technology 498 131865 (2025)
https://doi.org/10.1016/j.surfcoat.2025.131865
Atomic layer deposition of HfO2 as a charge-lean capping layer material for SiO2-modulation acceptor doping of silicon
Somayeh Shams, Ingmar Ratschinski and Daniel HillerJournal of Applied Physics 137 (6) (2025)
https://doi.org/10.1063/5.0256687
Effect of Al variation on microstructure and properties of porous FeCoNiCrAlx high-entropy alloys synthesized via thermal explosion
Bowen Tang, Zhichao Shang, Weijia Guo, Zixuan Pang, Farid Akhtar, Jianzhong Wang, Baojing Zhang, Shiheng Li and Peizhong FengIntermetallics 180 108687 (2025)
https://doi.org/10.1016/j.intermet.2025.108687
Exploring the potential of silicate-based corrosion inhibition for copper in dynamic salt water environment
E. De Ketelaere, D. Moed, M. Vanoppen, T. Depover and K. VerbekenElectrochimica Acta 523 145956 (2025)
https://doi.org/10.1016/j.electacta.2025.145956
Strategy for the Integrated Design of Ferroelectric and Resistive Memristors for Neuromorphic Computing Applications
Jung-Kyu Lee, Yongjin Park, Euncho Seo, Woohyun Park, Chaewon Youn, Sejoon Lee and Sungjun KimACS Applied Electronic Materials 7 (7) 3055 (2025)
https://doi.org/10.1021/acsaelm.5c00222
Design and Implementation of High-Performance Tantalum Thin-Film Capacitors for Embedded Technologies
Jiping Zhao, Shiheng Liu, Ruida Zhao, Jingyi An and Youlong XuIEEE Transactions on Components, Packaging and Manufacturing Technology 15 (4) 868 (2025)
https://doi.org/10.1109/TCPMT.2025.3543402
Nanosheet transistors: materials, devices, systems and applications
A. Angelin Delighta, J. S. Raj Kumar, I. V. Binola K Jebalin and D. NirmalJournal of Materials Science 60 (16) 6769 (2025)
https://doi.org/10.1007/s10853-025-10827-4
Effects of Work Function and Thermal Stability of Top Electrode Materials on Electrical Properties of ZrO2-Based DRAM Capacitors
Hyeongjun Kim, Kyungmin Choi, Hojin Lee and Woongkyu LeeElectronic Materials Letters 21 (4) 559 (2025)
https://doi.org/10.1007/s13391-025-00573-9
1 (2025)
https://doi.org/10.1109/IRPS48204.2025.10983414
Low-Voltage Graphene Interface-Engineered Organic Ferroelectric Tunnel Junction Devices
Shreyam Natani, Pranjali Khajanji, Li Cheng, Kassra Eshraghi, Zichen Zhang, Wade Shipley, Andrea R. Tao and Prabhakar R. BandaruACS Applied Materials & Interfaces 17 (22) 32773 (2025)
https://doi.org/10.1021/acsami.5c01721
Post-hydration treatment and nano-SiO2 blocking defects in anodized aluminum foils to improve the breakdown voltage of a PEDOT:PSS solid electrolytic capacitor
Shiheng Liu, Ruida Zhao, Jingyi An, Yizhuo Li, Yilong Jia and Youlong XuJournal of Materials Chemistry C 13 (26) 13519 (2025)
https://doi.org/10.1039/D5TC01021G
Electronic and dielectric properties of rare‐earth oxides in visible and near‐infrared range: A first‐principles study
Juan Wang, Yixiu Luo, Zhen Tong, Huimin Xiang, Luchao Sun and Jingyang WangJournal of the American Ceramic Society (2025)
https://doi.org/10.1111/jace.70045
1 (2025)
https://doi.org/10.1109/EDTM61175.2025.11040756
Synaptic devices based on flash memory using quantum dots
Jisoo Choi, Soyeon Jeong, Jeongmok Yang, Jaemin Kim and Moongyu JangJournal of the Korean Physical Society (2025)
https://doi.org/10.1007/s40042-025-01419-1
First-principles study on thermodynamic stability and electronic structures of the ferroelectric binary HfO2 and ZrO2 (001) polar surfaces
Jin Yuan, Jian-Qing Dai, Miao-Wei Zhao, Yun-Ya Zhong and Da-Wei DengSurfaces and Interfaces 56 105523 (2025)
https://doi.org/10.1016/j.surfin.2024.105523
67 (2025)
https://doi.org/10.1007/978-981-96-0247-6_2
Effects of ion irradiation induced phase transformations and oxygen vacancies on the leakage current characteristics of HfO2 thin films deposited on GaAs
K Vinod Kumar, N Arun, A Mangababu, A Mishra, Sunil Ojha, A P Pathak and S V S Nageswara RaoJournal of Physics D: Applied Physics 58 (6) 065301 (2025)
https://doi.org/10.1088/1361-6463/ad91c2
Extended Huckel DFT-based study of Icosagens passivation at the edge of armchair graphene nanoribbon for next generation nanoelectronics applications
Anshul and Rishu ChaujarMicro and Nanostructures 208263 (2025)
https://doi.org/10.1016/j.micrna.2025.208263
Ammonia gas sensors based on multi-wall carbon nanofiber field effect transistors by using gate modulation
Mostafa ShooshtariColloids and Surfaces A: Physicochemical and Engineering Aspects 704 135563 (2025)
https://doi.org/10.1016/j.colsurfa.2024.135563
Effect of film thickness on phase structure of epitaxial non-doped hafnium oxide films
Mengdi He, Tingting Yao, Xuexi Yan, Beibei Qiao, Zhen Qian, Yixiao Jiang, Min Tian, Zhiqing Yang and Chunlin ChenMicron 190 103762 (2025)
https://doi.org/10.1016/j.micron.2024.103762
Structural and electrical behaviors of Al2O3:ZrO2:HfO2 ternary composite oxide films as a function of bottom electrodes
Md. Kashif Shamim, William Maudez, Estelle Wagner, Giacomo Benvenuti, Seema Sharma and Rashmi RaniJournal of Advanced Dielectrics (2025)
https://doi.org/10.1142/S2010135X25500183
1 (2025)
https://doi.org/10.1109/CSTIC64481.2025.11017790
Nanosheets Derived from Titanium Diboride as Gate Insulators for Atomically Thin Transistors
Anshul Rasyotra, Mayukh Das, Dipanjan Sen, Zhiyu Zhang, Andrew Pannone, Chen Chen, Joan M. Redwing, Yang Yang, Kabeer Jasuja and Saptarshi DasACS Nano 19 (21) 19646 (2025)
https://doi.org/10.1021/acsnano.4c18634
A study on electrical properties based on nitrogen distribution in nitrogen-doped hafnium silicate through first-principles
Yein Cho and Yong-Chae ChungPhysics Letters A 534 130275 (2025)
https://doi.org/10.1016/j.physleta.2025.130275
ZrO2 Based Multilayered Stacks with Al2O3, Y2O3 or La2O3 Interlayers for SiC Power Devices
Sandra Krause, Aleksey Mikhaylov, Uwe Schroeder, Thomas Mikolajick and Andre WachowiakACS Applied Materials & Interfaces 17 (19) 28789 (2025)
https://doi.org/10.1021/acsami.5c00947
Atomically Flat Dielectric Patterns for Bandgap Engineering and Lateral Junction Formation in MoSe2 Monolayers
Philipp Moser, Lukas M. Wolz, Alex Henning, Andreas Thurn, Matthias Kuhl, Peirui Ji, Pedro Soubelet, Martin Schalk, Johanna Eichhorn, Ian D. Sharp, Andreas V. Stier and Jonathan J. FinleyAdvanced Functional Materials 35 (15) (2025)
https://doi.org/10.1002/adfm.202418528
Electron trapping in HfO2 layer deposited over a HF last treated silicon substrate
L. Sambuco Salomone, M.V. Cassani, M. Garcia-Inza, S. Carbonetto, E. Redin, F. Campabadal and A. FaigónMicroelectronic Engineering 295 112277 (2025)
https://doi.org/10.1016/j.mee.2024.112277
Au@h‐BN Core–Shell Nanostructure as Advanced Shell‐Isolated Nanoparticles for In Situ Electrochemical Raman Spectroscopy in Alkaline Environments
Jee Hyeon Kim, Jihyun Ra, Younghee Park, Junyeon Yoon, Eunji Lee and Hyunseob LimAdvanced Functional Materials (2025)
https://doi.org/10.1002/adfm.202504706
Si-doped HZO and ZrO2 for hysteresis free high-k dielectric
Harshil Kashyap, Ping-Che Lee, Kisung Chae, Matthias Passlack, Ajay K. Yadav, Keith Wong, Srini Nemani, Ellie Yieh, Jeffrey Spiegelman, Kyeongjae Cho, Asif Islam Khan and Andrew C. KummelJournal of Vacuum Science & Technology A 43 (2) (2025)
https://doi.org/10.1116/6.0003895
Preparation and Characterization of High‐Dielectric‐Performance Polyurethane Based on Various Diisocyanates
Zhixiang Yan, Huiting Yang, Shuo Zheng and Zhiyong TanJournal of Applied Polymer Science 142 (24) (2025)
https://doi.org/10.1002/app.57027
Nanosheet Field Effect Transistors: A Comprehensive Review
M. Balasubrahmanyam, Archana Pandey and Ekta GoelECS Journal of Solid State Science and Technology 14 (1) 013005 (2025)
https://doi.org/10.1149/2162-8777/ada57d
635 (2025)
https://doi.org/10.1007/978-981-96-0247-6_9
Resonantly Enhanced Hybrid Wannier–Mott–Frenkel Excitons in Organic–Inorganic Van Der Waals Heterostructures
Shaohua Fu, Jianwei Ding, Haifeng Lv, Yue Zheng, Shuangyan Liu, Kun Zhao, Zhiying Bai, Yumeng Shi, Dawei He, Rui Wang, Jimin Zhao, Xiaojun Wu, Dongsheng Tang, Xiaohui Qiu, Yongsheng Wang and Xiaoxian ZhangAdvanced Materials 37 (8) (2025)
https://doi.org/10.1002/adma.202411972
Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density
Jiaxin Liu, Shan Huang, Zhenyuan Xiao, Ning Li, Jaekyun Kim, Jidong Jin and Jiawei ZhangElectronic Materials 6 (1) 2 (2025)
https://doi.org/10.3390/electronicmat6010002
Interface Engineering and Modulation of Nickel Oxide for High Air‐Stable p‐Type Crystalline Silicon Solar Cells
Le Li, Jiahui Xu, Jilei Wang and Shaojuan BaoSmall 21 (10) (2025)
https://doi.org/10.1002/smll.202411818
Sub-Nanometer Equivalent Oxide Thickness and Threshold Voltage Control Enabled by Silicon Seed Layer on Monolayer MoS2 Transistors
Jung-Soo Ko, Sol Lee, Robert K. A. Bennett, Kirstin Schauble, Marc Jaikissoon, Kathryn Neilson, Anh Tuan Hoang, Andrew J. Mannix, Kwanpyo Kim, Krishna C. Saraswat and Eric PopNano Letters 25 (7) 2587 (2025)
https://doi.org/10.1021/acs.nanolett.4c01775
Transferrable, wet-chemistry-derived high-k amorphous metal oxide dielectrics for two-dimensional electronic devices
Zhixin Yao, Huifeng Tian, U. Sasaki, Huacong Sun, Jingyi Hu, Guodong Xue, Ye Seul Jung, Ruijie Li, Zhenjiang Li, PeiChi Liao, Yihan Wang, Lina Yang Zhang, Ge Yin, Xuanyu Zhang, Yijie Luo, Wenxi Li, Yong Soo Cho, Peizhi Liu, Kaihui Liu, Yanfeng Zhang, Lifen Wang, Junjie Guo and Lei LiuNature Communications 16 (1) (2025)
https://doi.org/10.1038/s41467-025-56815-9
Exciton Localization in Two‐Dimensional Semiconductors through Modification of the Dielectric Environment
Kelly Yohana Muñoz‐Gómez and Hanz Yecid Ramírez‐Gómezphysica status solidi (b) 262 (7) (2025)
https://doi.org/10.1002/pssb.202400588
A Green High‐k Dielectric from Modified Carboxymethyl Cellulose‐Based with Dextrin
Leon Lukhas Santoso, Suhendro Purbo Prakoso, Hai‐Khue Bui, Qi‐An Hong, Ssu‐Yu Huang, Tai‐Chin Chiang, Kuan‐Yeh Huang, Siti Nurkhamidah, Dewi Tristantini and Yu‐Cheng ChiuMacromolecular Rapid Communications 45 (12) (2024)
https://doi.org/10.1002/marc.202400059
Experimental Comparison of HfO2/X-Based ReRAM Devices Switching Properties by the MIM Capacitance
Fernando José da Costa, Aseel Zeinati, Renan Trevisoli, Durga Misra and Rodrigo Trevisoli DoriaIEEE Journal of the Electron Devices Society 12 1037 (2024)
https://doi.org/10.1109/JEDS.2024.3485622
Substrate-tuned dielectric screening effect on optical properties of monolayer MoSe2
Liusheng Huang, Honggang Gu, Mingsheng Fang and Shiyuan LiuApplied Surface Science 644 158748 (2024)
https://doi.org/10.1016/j.apsusc.2023.158748
Multifunctional characterisation of pressureless sintered Al2O3 –CaTiO3 nanocomposite
July Randhari, Prafulla Kumar Mallik and Sukant Kumar SenapatiInternational Journal of Materials Research 115 (11-12) 970 (2024)
https://doi.org/10.1515/ijmr-2024-0055
Synthesis and Study of Dielectric Properties of Composite Material Consisting of Glass Ceramics Based on Pearlite and TiO2
L. N. Grigoryan and P. G. PetrosyanJournal of Contemporary Physics (Armenian Academy of Sciences) 59 (3) 294 (2024)
https://doi.org/10.1134/S1068337224700415
1 (2024)
https://doi.org/10.1109/SENSORS60989.2024.10784972
Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications
Richard Drevet, Pavel Souček, Pavel Mareš, Pavel Ondračka, Martin Dubau, Tamás Kolonits, Zsolt Czigány, Katalin Balázsi and Petr VašinaVacuum 221 112881 (2024)
https://doi.org/10.1016/j.vacuum.2023.112881
Quantum transport study of transition-metal dichalcogenide top-contacted geometries investigating the impact of nonuniform doping, dielectric environment, and image-force barrier lowering
Pranay Baikadi, William Vandenberghe, Peter Reyntjens, Raseong Kim and Maarten Van de PutPhysical Review Applied 22 (6) (2024)
https://doi.org/10.1103/PhysRevApplied.22.064058
A Review of Nanostructures in Electrowetting-on-dielectric Systems: From Nanostructured Dielectric Layers to Nanofluids
Marco L. Budlayan, Jonathan N. Patricio, Susan D. Arco and Raphael A. GuerreroCurrent Nanoscience 20 (2) 248 (2024)
https://doi.org/10.2174/1573413719666230330095106
Ultrafast reconfigurable direct charge trapping devices based on few-layer MoS2
Hui 辉 Gao 高, Xuanye 轩冶 Liu 刘, Peng 鹏 Song 宋, Chijun 驰俊 Wei 尉, Nuertai 尔泰⋅加孜拉 Jiazila 努, Jiequn 杰群 Sun 孙, Kang 康 Wu 吴, Hui 辉 Guo 郭, Haitao 海涛 Yang 杨, Lihong 丽宏 Bao 鲍 and Hong-Jun 鸿钧 Gao 高Chinese Physics B 33 (12) 127201 (2024)
https://doi.org/10.1088/1674-1056/ad8ecd
High-k Metal–Insulator–Metal Capacitors for RF and Mixed-Signal VLSI Circuits: Challenges and Opportunities
D. Kannadassan, K. Sivasankaran, S. Kumaravel, Chun-Hu Cheng, Maryam Shojaei Baghini and P. S. MallickProceedings of the IEEE 112 (10) 1610 (2024)
https://doi.org/10.1109/JPROC.2024.3506996
Structural, optoelectronic, and magnetic properties of Q‑carbon studied by hybrid density functional theory ab initio calculations and experiment
Luiz A.F.C. Viana, Alan A.G. Santos, Pablo D. Borges, Luísa Scolfaro, Deyse G. Costa, Saif Taqy, Istiaq F. Shiam, Subrata Karmakar and Ariful HaqueDiamond and Related Materials 149 111638 (2024)
https://doi.org/10.1016/j.diamond.2024.111638
Atomic-Layer-Deposited Al2O3 Layer Inserted in SiO2/HfO2 Gate-Stack-Induced Positive Flat-Band Shift with Dual Interface Dipoles for Advanced Logic Device
Yu-Dong Lv, Lei Shen, Yu-Chun Li, Cai-Yu Shi, Zi-Ying Huang, Xing Yu, Xiao-Na Zhu, Hong-Liang Lu, Shaofeng Yu and David Wei ZhangACS Applied Nano Materials 7 (24) 28496 (2024)
https://doi.org/10.1021/acsanm.4c05649
Terbium Oxide as High Dielectric Constant Passivation Layer for Silicon-Based Metal-Oxide-Semiconductor Capacitor
Songhua Zhang and Way Foong LimCeramics International (2024)
https://doi.org/10.1016/j.ceramint.2024.12.223
High throughput synthesis of SiO2 microspheres enhancing dielectric properties of quartz fibers insulation composites for high temperature resistant communication cable
Jiaheng Liu, Zhijie Jin, Kerui Li, Qingwei Wang, Hongzhi Wang, Xiang Li, Yaoqing Chu and Zhifu LiuCeramics International 50 (7) 10854 (2024)
https://doi.org/10.1016/j.ceramint.2023.12.401
Optical constants and dispersion energy parameters of heterostructured Ga2O3/GaN films
Peverga R. Jubu, Terngu Timothy Bem, Urenyang Ndeze Ndeze, Bunmi Jacob Akeredolu, Mohammed Bakr, Eli Danladi, Oluwaseun Adedokun, Abdallah Aldayyat, Eweh Junior Eweh and Fong Kwong YamOptical and Quantum Electronics 56 (3) (2024)
https://doi.org/10.1007/s11082-023-06080-1
Hydrothermal Synthesis of Aqueous Sols of Lactic Acid-Stabilized Nanocrystalline Hafnium Dioxide and Their Enzyme-Like Activity
G. S. Taran, E. D. Sheichenko, M. A. Popkov, K. N. Novoselova, Yu. A. Kochenkova, A. D. Filippova, A. E. Baranchikov and V. K. IvanovRussian Journal of Inorganic Chemistry 69 (14) 2099 (2024)
https://doi.org/10.1134/S0036023624602927
1 (2024)
https://doi.org/10.1109/IITC61274.2024.10732422
FETs for Analog Neural MACs
Rinku Rani Das, T. R. Rajalekshmi, Sruthi Pallathuvalappil and Alex JamesIEEE Access 12 54019 (2024)
https://doi.org/10.1109/ACCESS.2024.3387094
Prediction of formation energy for oxides in ODS steels by machine learning
Tian-Xing Yang and Peng DouMaterials & Design 248 113503 (2024)
https://doi.org/10.1016/j.matdes.2024.113503
Analysis of Spin Transfer Torque Magneto Resistive Random Access Memory Based on Their Materials, Structures, and Applications
Seema Kumari and Rekha YadavJournal of The Institution of Engineers (India): Series D (2024)
https://doi.org/10.1007/s40033-024-00828-z
Study on the fabrication of high-quality hafnium oxide thin films using spatial rotated atomic layer deposition and supercritical fluids treatment
Wen-Hsi Lee, Chien-Ching Feng, Guan-Fu Chen and Tai-Chen KuoJournal of Vacuum Science & Technology A 42 (6) (2024)
https://doi.org/10.1116/6.0004041
01 (2024)
https://doi.org/10.1109/SISPAD62626.2024.10732911
Determining the Kinetic and Thermodynamic Parameters of Anionic Polymerization of Styrene Using Linear Free‐Energy Relationship
Shen Li, Zhong‐Xin Liu, Yin‐Ning Zhou and Zheng‐Hong LuoMacromolecular Reaction Engineering 18 (6) (2024)
https://doi.org/10.1002/mren.202400021
Computational determination of La substitution in promising XO2 (X = Ce, Zr, Sn): emerging materials for optoelectronic applications
Muhammad Moin, Abdul Waheed Anwar, Mehrunisa Babar, Anwar Ali and R. BilalThe European Physical Journal B 97 (2) (2024)
https://doi.org/10.1140/epjb/s10051-024-00657-9
2D layered halide perovskite for field-effect transistors
Tufan Paul, Silvia Colella and Emanuele OrgiuApplied Physics Reviews 11 (4) (2024)
https://doi.org/10.1063/5.0206658
Doping-less MultiGate Inverted-T shape FET device with Schottky source/drain contacts
Sameeksha Munjal, Neelam Rup Prakash, Jasbir Kaur and KomalMicroelectronics Journal 143 106033 (2024)
https://doi.org/10.1016/j.mejo.2023.106033
Design strategies for dielectric metal–organic frameworks and their applications in microelectronic devices
Arif I. Inamdar, Saqib Kamal, Muhammad Usman, Ming-Hsi Chiang and Kuang-Lieh LuCoordination Chemistry Reviews 502 215596 (2024)
https://doi.org/10.1016/j.ccr.2023.215596
A comprehensive electrochemical evaluation of the corrosion inhibition by sodium silicate on carbon steel
E. De Ketelaere, D. Moed, K. Verbeken and T. DepoverElectrochimica Acta 507 145053 (2024)
https://doi.org/10.1016/j.electacta.2024.145053
A novel solution to improve static and dynamic retention characteristics by enhancing hydrogen passivation with in situ LD-TEOS/TEOS dual layer
Jieun Lee, Dongkyu Jang, Sangho Kim, Shindeuk Kim, Taehoon Park and Hyeongsun HongJapanese Journal of Applied Physics 63 (3) 03SP78 (2024)
https://doi.org/10.35848/1347-4065/ad2030
Novel deuterated cyclopentadienyl zirconium/hafnium precursors for atomic layer deposition of high-performance ZrO2/HfO2 thin films
Sunwoo Park, Yoona Choi, Sangwook Park, Hayoon Lee, Kiho Lee, Seokwoo Kang, Jongwook Park and Woojin JeonApplied Materials Today 40 102354 (2024)
https://doi.org/10.1016/j.apmt.2024.102354