The European Physical Journal Applied Physics (EPJ AP)

Effect of the Annealing Temperature of the Seed Layer on the Following Main Layer in Atomic‐Layer‐Deposited SrTiO 3 Thin Films

Sang Hyeon Kim, Woongkyu Lee, Cheol Hyun An, et al.
physica status solidi (RRL) – Rapid Research Letters 13 (5) 1800557 (2019)
DOI: 10.1002/pssr.201800557
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Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics

J. L. Everaert, E. Rosseel, J. Dekoster, et al.
Applied Physics Letters 96 (12) 122906 (2010)
DOI: 10.1063/1.3373920
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Investigating doping effects on high-κ metal gate stack for effective work function engineering

C. Leroux, S. Baudot, M. Charbonnier, et al.
Solid-State Electronics 88 21 (2013)
DOI: 10.1016/j.sse.2013.04.011
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Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications

Nelson Y. Garces, David J. Meyer, Virginia D. Wheeler, et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32 (3) 03D101 (2014)
DOI: 10.1116/1.4818254
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Structural and dielectric properties of oxynitride perovskite LaTiOxNy thin films

A. Ziani, C. Le Paven-Thivet, L. Le Gendre, et al.
Thin Solid Films 517 (2) 544 (2008)
DOI: 10.1016/j.tsf.2008.06.061
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Evolutionary search for new high-kdielectric materials: methodology and applications to hafnia-based oxides

Qingfeng Zeng, Artem R. Oganov, Andriy O. Lyakhov, et al.
Acta Crystallographica Section C Structural Chemistry 70 (2) 76 (2014)
DOI: 10.1107/S2053229613027861
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Gallium Nitride Power Devices

Tianli Duan and Liu Zhihong
Gallium Nitride Power Devices 145 (2017)
DOI: 10.1201/9781315196626-7
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Mechanism of photocatalytic activities in Cr-doped SrTiO3 under visible-light irradiation: an insight from hybrid density-functional calculations

Pakpoom Reunchan, Naoto Umezawa, Shuxin Ouyang and Jinhua Ye
Physical Chemistry Chemical Physics 14 (6) 1876 (2012)
DOI: 10.1039/c2cp23348g
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Electronic structure of an oxygen vacancy in Al2O3 from the results of Ab Initio quantum-chemical calculations and photoluminescence experiments

V. A. Pustovarov, V. Sh. Aliev, T. V. Perevalov, V. A. Gritsenko and A. P. Eliseev
Journal of Experimental and Theoretical Physics 111 (6) 989 (2010)
DOI: 10.1134/S1063776110120113
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Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

S. Gieraltowska, L. Wachnicki, B.S. Witkowski, M. Godlewski and E. Guziewicz
Thin Solid Films 520 (14) 4694 (2012)
DOI: 10.1016/j.tsf.2011.10.151
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Interlevel transitions in core–shell nanodots with dielectric environment

E.C. Niculescu
Superlattices and Microstructures 51 (6) 814 (2012)
DOI: 10.1016/j.spmi.2012.03.025
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Defects and their passivation in high K gate oxides

K. Tse and J. Robertson
Microelectronic Engineering 84 (4) 663 (2007)
DOI: 10.1016/j.mee.2006.12.009
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Fabrication of Releasable Single-Crystal Silicon-Metal Oxide Field-Effect Devices and Their Deterministic Assembly on Foreign Substrates

Hyun-Joong Chung, Tae-il Kim, Hoon-Sik Kim, et al.
Advanced Functional Materials 21 (16) 3029 (2011)
DOI: 10.1002/adfm.201100124
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Interfaces in {100} epitaxial heterostructures of perovskite oxides

J.-L. Maurice, D. Imhoff, J.-P. Contour and C. Colliex
Philosophical Magazine 86 (15) 2127 (2006)
DOI: 10.1080/14786430600640460
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Role of defect relaxation for trap-assisted tunneling in high-κthin films: A first-principles kinetic Monte Carlo study

Gunther Jegert, Dan Popescu, Paolo Lugli, et al.
Physical Review B 85 (4) 045303 (2012)
DOI: 10.1103/PhysRevB.85.045303
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Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces

Hyeon-Kyun Noh, Young Jun Oh and K.J. Chang
Physica B: Condensed Matter 407 (15) 2907 (2012)
DOI: 10.1016/j.physb.2011.08.079
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Induced-charge electroosmotic flow around dielectric particles in uniform electric field

Fang Zhang and Dongqing Li
Journal of Colloid and Interface Science 410 102 (2013)
DOI: 10.1016/j.jcis.2013.08.017
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Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

J. Charles Pravin, D. Nirmal, P. Prajoon and J. Ajayan
Physica E: Low-dimensional Systems and Nanostructures 83 95 (2016)
DOI: 10.1016/j.physe.2016.04.017
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Analysis of gate engineered asymmetric junctionless double gate MOSFET for varying operating conditions

Namrata Mendiratta, Suman Lata Tripathi and Bhanu Prakash Kolla
IOP Conference Series: Materials Science and Engineering 872 012012 (2020)
DOI: 10.1088/1757-899X/872/1/012012
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Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies

Baikadi Pranay Kumar Reddy, Karri Babu Ravi Teja and Kavindra Kandpal
Semiconductors 52 (4) 420 (2018)
DOI: 10.1134/S1063782618040073
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Flexible IGZO Schottky diodes on paper

Jakub Kaczmarski, Michał A Borysiewicz, Krzysztof Piskorski, et al.
Semiconductor Science and Technology 33 (1) 015010 (2018)
DOI: 10.1088/1361-6641/aa9acb
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High-throughput identification of higher- κ dielectrics from an amorphous N 2 -doped HfO 2 –TiO 2 library

K.-S. Chang, W.-C. Lu, C.-Y. Wu and H.-C. Feng
Journal of Alloys and Compounds 615 386 (2014)
DOI: 10.1016/j.jallcom.2014.06.115
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Applications of Oxide Coatings in Photovoltaic Devices

Sonya Calnan
Coatings 4 (1) 162 (2014)
DOI: 10.3390/coatings4010162
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Nucleation and crystal growth in HfO2 thin films by UV nanosecond pulsed laser annealing

Toshiyuki Tabata
Applied Physics Express 13 (1) 015509 (2020)
DOI: 10.7567/1882-0786/ab5ce2
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Fine-tuning of the electro-optical switching behavior in indium tin oxide

Ivan A. Pshenichnyuk, Sergey S. Kosolobov and Vladimir P. Drachev
Physical Review B 103 (11) (2021)
DOI: 10.1103/PhysRevB.103.115404
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Epitaxial integration of tetragonal BiFeO3 with silicon for nonvolatile memory applications

Jingbin Zhu, Zhigang Yin, Zhen Fu, et al.
Journal of Crystal Growth 459 178 (2017)
DOI: 10.1016/j.jcrysgro.2016.11.081
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Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors

Yuji Kiyota, Kenji Itaka, Yuta Iwashita, et al.
Japanese Journal of Applied Physics 50 (6) 06GH12 (2011)
DOI: 10.1143/JJAP.50.06GH12
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High-quality ZrO2/Si(001) thin films by a sol-gel process: Preparation and characterization

H. Döscher, G. Lilienkamp, P. Iskra, et al.
Journal of Applied Physics 107 (9) 094103 (2010)
DOI: 10.1063/1.3340830
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Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

O. Engström, B. Raeissi, S. Hall, et al.
Solid-State Electronics 51 (4) 622 (2007)
DOI: 10.1016/j.sse.2007.02.021
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Differences Between Charge Trapping States in Irradiated Nano-Crystalline HfO<formula formulatype="inline"><tex>$_{2}$</tex></formula> and Non-Crystalline Hf Silicates

G. Lucovsky, D. M. Fleetwood, S. Lee, et al.
IEEE Transactions on Nuclear Science 53 (6) 3644 (2006)
DOI: 10.1109/TNS.2006.886211
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Ultra-thin and Flat Mica as Gate Dielectric Layers

Chong Guan Low and Qing Zhang
Small 8 (14) 2178 (2012)
DOI: 10.1002/smll.201200300
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Hydrogen Barrier Layer Against Silicon Oxidation during Atomic Layer Deposition of Al[sub 2]O[sub 3] and HfO[sub 2]

Martin M. Frank, Yu Wang, Ming-Tsung Ho, et al.
Journal of The Electrochemical Society 154 (2) G44 (2007)
DOI: 10.1149/1.2405839
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Annealing effect on the formation of high-k dielectric in the W/ultrathin HfO2/Si-substrate system

V. I. Rudakov, E. A. Bogoyavlenskaya and Yu. I. Denisenko
Technical Physics Letters 38 (11) 982 (2012)
DOI: 10.1134/S1063785012110120
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Comparison of oxidized/nitrided Zr thin films on Si and SiC substrates

Yew Hoong Wong and Kuan Yew Cheong
Ceramics International 39 S475 (2013)
DOI: 10.1016/j.ceramint.2012.10.117
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Electronic band structure of zirconia and hafnia polymorphs from theGWperspective

Hong Jiang, Ricardo I. Gomez-Abal, Patrick Rinke and Matthias Scheffler
Physical Review B 81 (8) 085119 (2010)
DOI: 10.1103/PhysRevB.81.085119
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Growth temperature dependence of epitaxial Gd2O3 films on Si(111)

G. Niu, B. Vilquin, N. Baboux, et al.
Microelectronic Engineering 86 (7-9) 1700 (2009)
DOI: 10.1016/j.mee.2009.03.107
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Nonvolatile Memory With Nitrogen-Stabilized Cubic-Phase $\hbox{ZrO}_{2}$ as Charge-Trapping Layer

Yung-Hsien Wu, Lun-Lun Chen, Jia-Rong Wu, et al.
IEEE Electron Device Letters 31 (9) 1008 (2010)
DOI: 10.1109/LED.2010.2055530
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Layer structure variations of ultra-thin HfO2 films induced by post-deposition annealing

Wei-En Fu and Yong-Qing Chang
Applied Surface Science 257 (17) 7436 (2011)
DOI: 10.1016/j.apsusc.2011.02.132
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LanthanideN,N-Dimethylaminodiboranates as a New Class of Highly Volatile Chemical Vapor Deposition Precursors

Scott R. Daly, Do Young Kim and Gregory S. Girolami
Inorganic Chemistry 51 (13) 7050 (2012)
DOI: 10.1021/ic201852j
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Phase transformations in oxides induced by swift heavy ions

A. Benyagoub
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 245 (1) 225 (2006)
DOI: 10.1016/j.nimb.2005.11.106
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Investigations on electrical characteristics and reliability properties of MOS capacitors using HfAlOx on n-GaAs substrates

P.S. Das and Abhijit Biswas
Microelectronics Reliability 52 (1) 112 (2012)
DOI: 10.1016/j.microrel.2011.08.005
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Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix

S R C Pinto, M Buljan, L Marques, et al.
Nanotechnology 23 (40) 405605 (2012)
DOI: 10.1088/0957-4484/23/40/405605
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Measurement of Dipoles/Roll-Off /Work Functions by Coupling CV and IPE and Study of Their Dependence on Fabrication Process

Matthieu Charbonnier, Charles Leroux, V. Cosnier, et al.
IEEE Transactions on Electron Devices 57 (8) 1809 (2010)
DOI: 10.1109/TED.2010.2050957
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Cytotoxicity and physicochemical properties of hafnium oxide nanoparticles

James A. Field, Antonia Luna-Velasco, Scott A. Boitano, et al.
Chemosphere 84 (10) 1401 (2011)
DOI: 10.1016/j.chemosphere.2011.04.067
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Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

D. Zade, S. Sato, K. Kakushima, et al.
Microelectronics Reliability 51 (4) 746 (2011)
DOI: 10.1016/j.microrel.2010.11.004
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Improved interface properties of GaN metal-oxide-semiconductor device with non-polar plane and AlN passivation layer

Xian Wu, Renrong Liang, Lei Guo, et al.
Applied Physics Letters 109 (23) 232101 (2016)
DOI: 10.1063/1.4971352
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Electrically induced change in HfO2/1-monolayer TiO2/SiO2 metal-oxide-semiconductor stacks: capacitance–voltage and hard X-ray photoelectron spectroscopy studies

Noriyuki Miyata, Kyoko Sumita, Akira Yasui, et al.
Applied Physics Express 14 (7) 071005 (2021)
DOI: 10.35848/1882-0786/ac0b08
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Effects of anodisation parameters on thin film properties: a review

Y. H. Wong, M. G. Affendy, S. K. Lau, et al.
Materials Science and Technology 33 (6) 699 (2017)
DOI: 10.1080/02670836.2016.1193654
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Study of the optoelectronic and piezoelectric properties of ZrO2 doped PVDF from quantum chemistry calculations

Albert Veved, Geh Wilson Ejuh and Noël Djongyang
Chinese Journal of Physics 63 213 (2020)
DOI: 10.1016/j.cjph.2019.10.022
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Thickness-dependent phase evolution and dielectric property of Hf0.5Zr0.5O2 thin films prepared with aqueous precursor

Yong Yan, Dayu Zhou, Chunxia Guo, et al.
Journal of Sol-Gel Science and Technology 77 (2) 430 (2016)
DOI: 10.1007/s10971-015-3871-5
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Defect calculations in semiconductors through a dielectric-dependent hybrid DFT functional: The case of oxygen vacancies in metal oxides

Matteo Gerosa, Carlo Enrico Bottani, Lucia Caramella, et al.
The Journal of Chemical Physics 143 (13) 134702 (2015)
DOI: 10.1063/1.4931805
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Lanthanide rare earth oxide thin film as an alternative gate oxide

Kian Heng Goh, A.S.M.A. Haseeb and Yew Hoong Wong
Materials Science in Semiconductor Processing 68 302 (2017)
DOI: 10.1016/j.mssp.2017.06.037
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Transport mechanisms of electrons and holes in dielectric films

K A Nasyrov and V A Gritsenko
Physics-Uspekhi 56 (10) 999 (2013)
DOI: 10.3367/UFNe.0183.201310h.1099
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Behavior of hydrogen in wide band gap oxides

K. Xiong, J. Robertson and S. J. Clark
Journal of Applied Physics 102 (8) 083710 (2007)
DOI: 10.1063/1.2798910
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Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y

Xianghan Xu, Fei-Ting Huang, Yubo Qi, et al.
Nature Materials (2021)
DOI: 10.1038/s41563-020-00897-x
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Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

Qi Xie, Davy Deduytsche, Marc Schaekers, et al.
Applied Physics Letters 97 (11) 112905 (2010)
DOI: 10.1063/1.3490710
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Two photon processes in ZnO quantum dots

Deepti Maikhuri, S.P. Purohit and K.C. Mathur
Superlattices and Microstructures 89 296 (2016)
DOI: 10.1016/j.spmi.2015.11.017
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Developments in High Temperature Corrosion and Protection of Materials

Z. Li and W. Gao
Developments in High Temperature Corrosion and Protection of Materials 521 (2008)
DOI: 10.1533/9781845694258.3.521
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Influence of oxygen vacancies on the dielectric properties of hafnia: First-principles calculations

Eric Cockayne
Physical Review B 75 (9) 094103 (2007)
DOI: 10.1103/PhysRevB.75.094103
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Characterization of Ta-Ti Thin Films by using a Scanning Droplet Cell in Combination with AC Linear Sweep Voltammetry

Mu Fan, Kirill Sliozberg, Fabio La Mantia, et al.
ChemElectroChem 1 (5) 903 (2014)
DOI: 10.1002/celc.201300153
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Electrical Characteristics of Oxidized∕Nitrided Zr Thin Film on Si

Yew Hoong Wong and Kuan Yew Cheong
Journal of The Electrochemical Society 158 (12) H1270 (2011)
DOI: 10.1149/2.106112jes
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High-k dielectrics for future generation memory devices (Invited Paper)

J.A. Kittl, K. Opsomer, M. Popovici, et al.
Microelectronic Engineering 86 (7-9) 1789 (2009)
DOI: 10.1016/j.mee.2009.03.045
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Interfacial structure of epitaxial SrTiO3on Si: experiments and simulations

X F Wang, Juan Wang, Quan Li, et al.
Journal of Physics D: Applied Physics 42 (8) 085409 (2009)
DOI: 10.1088/0022-3727/42/8/085409
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Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

J. Yu, G. Chen, C.X. Li, et al.
Sensors and Actuators A: Physical 172 (1) 9 (2011)
DOI: 10.1016/j.sna.2011.02.021
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MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

S Abermann, G Pozzovivo, J Kuzmik, et al.
Semiconductor Science and Technology 22 (12) 1272 (2007)
DOI: 10.1088/0268-1242/22/12/005
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Improvement on low-temperature deposited HfO2 film and interfacial layer by high-pressure oxygen treatment

Po-Chun Yang, Ting-Chang Chang, Shih-Ching Chen, et al.
Solid-State Electronics 62 (1) 128 (2011)
DOI: 10.1016/j.sse.2011.03.012
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Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1−x high-κ dielectrics on Si

B. B. Triplett, P. T. Chen, Y. Nishi, et al.
Journal of Applied Physics 101 (1) 013703 (2007)
DOI: 10.1063/1.2402974
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Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

Yung-Shao Shen, Kuen-Yi Chen, Po-Chun Chen, Teng-Chuan Chen and Yung-Hsien Wu
Scientific Reports 7 (1) 43659 (2017)
DOI: 10.1038/srep43659
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Inkjet‐Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal‐Oxide Thin‐Film Transistors with Low Voltage Operation

Liam Gillan, Shujie Li, Jouko Lahtinen, et al.
Advanced Materials Interfaces 8 (12) 2100728 (2021)
DOI: 10.1002/admi.202100728
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Performance Analysis for Tri-Gate Junction-Less FET by Employing Trioxide and Rectangular Core Shell (RCS) Architecture

M. Prasad and U. B. Mahadevaswamy
Wireless Personal Communications 118 (1) 619 (2021)
DOI: 10.1007/s11277-020-08035-1
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Physics of Quantum Fluids

Jacques Levrat, Georg Rossbach, Raphaël Butté and Nicolas Grandjean
Springer Series in Solid-State Sciences, Physics of Quantum Fluids 177 201 (2013)
DOI: 10.1007/978-3-642-37569-9_10
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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

B. Raeissi, J. Piscator, O. Engström, et al.
Solid-State Electronics 52 (9) 1274 (2008)
DOI: 10.1016/j.sse.2008.04.005
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Elastic Modulus of HfO2 Thin Film Grown by Atomic Layer Deposition with Wrinkle-based Measurement

Hyun-Ju Choi and Yongseong Kim
Bulletin of the Korean Chemical Society 38 (10) 1246 (2017)
DOI: 10.1002/bkcs.11251
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Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics

Kalya Shubhakar, Kin Leong Pey, Nagarajan Raghavan, et al.
Microelectronic Engineering 109 364 (2013)
DOI: 10.1016/j.mee.2013.03.021
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Structural and band gaps studies of novel Al 2-x Hf x O 3 materials toward MOS applications

Norlida Kamarulzaman, Annie Maria Mahat, Nurhanna Badar and Cezhou Zhao
Materials Chemistry and Physics (2018)
DOI: 10.1016/j.matchemphys.2018.03.024
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Model Surfaces Produced by Atomic Layer Deposition

Rick B. Walsh, Shaun C. Howard, Andrew Nelson, et al.
Chemistry Letters 41 (10) 1247 (2012)
DOI: 10.1246/cl.2012.1247
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On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs

Muhammad Nawaz
Active and Passive Electronic Components 2015 1 (2015)
DOI: 10.1155/2015/651527
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Chemically Deposited Nanocrystalline Metal Oxide Thin Films

A. C. Lokhande, V. C. Lokhande, D. S. Dhawale, et al.
Chemically Deposited Nanocrystalline Metal Oxide Thin Films 165 (2021)
DOI: 10.1007/978-3-030-68462-4_7
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Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression

Cheng-Yi Chang, Fu-Ming Pan, Jian-Siang Lin, et al.
Journal of Applied Physics 120 (23) 234501 (2016)
DOI: 10.1063/1.4972029
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How morphology determines the charge storage properties of Ge nanocrystals in HfO 2

A. Slav, C. Palade, A.M. Lepadatu, et al.
Scripta Materialia 113 135 (2016)
DOI: 10.1016/j.scriptamat.2015.10.028
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Outlook and Challenges of Nano Devices, Sensors, and MEMS

Ling-Xuan Qian
Outlook and Challenges of Nano Devices, Sensors, and MEMS 3 (2017)
DOI: 10.1007/978-3-319-50824-5_1
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Frequency dispersion and dielectric relaxation in postdeposition annealed high-κ erbium oxide metal–oxide–semiconductor capacitors

Robin Khosla and Satinder K. Sharma
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 (1) 012201 (2018)
DOI: 10.1116/1.4995809
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Surface morphology of epitaxial lattice-matched Ba0.7Sr0.3O on Si(001) and vicinal Si(001)-4°[110] substrates

J. Zachariae and H. Pfnür
Surface Science 600 (13) 2785 (2006)
DOI: 10.1016/j.susc.2006.05.002
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High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

Daniel J. Lichtenwalner, Lin Cheng, Sarit Dhar, Anant Agarwal and John W. Palmour
Applied Physics Letters 105 (18) 182107 (2014)
DOI: 10.1063/1.4901259
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Performance Limits of an Alternating Current Electroluminescent Device

Vivian Wang, Yingbo Zhao and Ali Javey
Advanced Materials 33 (2) 2005635 (2021)
DOI: 10.1002/adma.202005635
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Technological Innovation for Value Creation

Qian Chen, Henrique L. Gomes, Asal Kiazadeh, et al.
IFIP Advances in Information and Communication Technology, Technological Innovation for Value Creation 372 527 (2012)
DOI: 10.1007/978-3-642-28255-3_58
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Study on the dielectric properties of Al 2 O 3 /TiO 2 sub-nanometric laminates: effect of the bottom electrode and the total thickness

M Ben Elbahri, A Kahouli, B Mercey, et al.
Journal of Physics D: Applied Physics 51 (6) 065101 (2018)
DOI: 10.1088/1361-6463/aaa4df
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Hydrothermal Synthesis of Aqueous Sols of Nanocrystalline HfO2

G. S. Taran, A. E. Baranchikov, O. S. Ivanova and K. Yu. Zhizhin
Russian Journal of Inorganic Chemistry 65 (6) 800 (2020)
DOI: 10.1134/S0036023620060236
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Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM

Shih-Kai Lin, Cheng-Hsien Wu, Min-Chen Chen, et al.
Journal of Physics D: Applied Physics 53 (39) 395101 (2020)
DOI: 10.1088/1361-6463/ab92c5
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Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric

Zhi-Peng Ling, Jun-Tao Zhu, Xinke Liu and Kah-Wee Ang
Scientific Reports 6 (1) 26609 (2016)
DOI: 10.1038/srep26609
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The Structure and Characterization of ZrO2Thin Films Prepared by Liquid Delivery-MOCVD

Rui Li, Dan Xie, Mingming Zhang, et al.
Ferroelectrics 407 (1) 140 (2010)
DOI: 10.1080/00150193.2010.484760
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Influence of annealing temperatures on solution-processed AlInZnO thin film transistors

Yana Gao, Jianguo Lu, Jianhua Zhang and Xifeng Li
Journal of Alloys and Compounds 646 675 (2015)
DOI: 10.1016/j.jallcom.2015.06.049
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Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

Riikka L. Puurunen
Journal of Applied Physics 97 (12) 121301 (2005)
DOI: 10.1063/1.1940727
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Valence band offset of ReS2/BN heterojunction measured by X-ray photoelectron spectroscopy

Heyuan Huang, Wenge Yang, Shu'an Xing, et al.
Physics Letters A 392 127142 (2021)
DOI: 10.1016/j.physleta.2021.127142
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High performance organic nonvolatile memory transistors based on HfO2 and poly(α-methylstyrene) electret hybrid charge-trapping layers

W. C. Xu, H. X. He, X. S. Jing, et al.
Applied Physics Letters 111 (6) 063302 (2017)
DOI: 10.1063/1.4997748
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Comparison of resistive switching characteristics by using e-gun/sputter deposited SiOx film in W/SiOx/TiN structure and pH/creatinine sensing through iridium electrode

Sourav Roy, Anisha Roy, Rajeswar Panja, et al.
Journal of Alloys and Compounds 726 30 (2017)
DOI: 10.1016/j.jallcom.2017.07.304
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Variable RF capacitor based on a-Si:H (P-doped) multi-length cantilevers

Y Q Fu, S B Milne, J K Luo, et al.
Journal of Physics: Conference Series 34 788 (2006)
DOI: 10.1088/1742-6596/34/1/130
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Localized breakdown in dielectrics and macroscopic charge transport through the whole gate stack: A comparative study

Yi Zheng, Andrew T. S. Wee, Yi Ching Ong, et al.
Applied Physics Letters 92 (1) 012914 (2008)
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A Cost-Effective $\hbox{Ni/Nb}_{2}\hbox{O}_{5}\hbox{/} \hbox{Al}_{2}\hbox{O}_{3}\hbox{/}\hbox{Ni}_{2}\hbox{Si}$ Metal–Insulator–Metal Capacitor Processed at 300 $^{\circ}\hbox{C}$ Using Laser Annealing and a Fully Silicided Amorphous Silicon Bottom Electrode

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A Dual-Gate Graphene FET Model for Circuit Simulation—SPICE Implementation

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Novel Photo-Defined Polymer-Enhanced Through-Silicon Vias for Silicon Interposers

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Effect of Space Radiation on the Leakage Current of MEMS Insulators

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Electromagnetic Performance of RF NEMS Graphene Capacitive Switches

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IEEE Transactions on Nanotechnology 13 (1) 70 (2014)
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Improved Performance of Amorphous InGaZnO Thin-Film Transistor With $\hbox{Ta}_{2}\hbox{O}_{5}$ Gate Dielectric by Using La Incorporation

L. X. Qian, X. Z. Liu, C. Y. Han and P. T. Lai
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Impact of Uniaxial Strain on Random Telegraph Noise in High- $k$ /Metal Gate pMOSFETs

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IEEE Transactions on Electron Devices 62 (3) 988 (2015)
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Intersublevel Photoabsorption and Photoelectric Processes in ZnO Quantum Dot Embedded in $\hbox{HfO}_{2}$ and AlN Matrices

D. Maikhuri, S. P. Purohit and K. C. Mathur
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A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

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Biodegradable Junctionless Transistors With Extremely Simple Structure

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Characterization of a Gm-C Filter Based on CNTFETs for Use in Digital Audio Broadcasting Systems

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Applied Physics Letters 103 (2) 023113 (2013)
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Characterizing the Charge Trapping across Crystalline and Amorphous Si/SiO 2 /HfO 2 Stacks from First-Principle Calculations

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Growth of an Al2O3 Layer and Sn@Al2O3 Core-Shell Nanoparticles by Using a Silicon Oxide/Aluminum Bilayer

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Electron beam induced local crystallization of HfO2 nanopores for biosensing applications

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Band alignment in Ge/GeOx/HfO2/TiO2 heterojunctions as measured by hard x-ray photoelectron spectroscopy

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Preparation and characterization of Al2O3 film deposited by RF sputtering and plasma enhanced atomic layer deposition

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Patrick Goley and Mantu Hudait
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Structural and Dielectric Properties of Subnanometric Laminates of Binary Oxides

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Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high- k /metal gate nMOSFETs with gate-last process

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Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

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Improving the ALD-grown Y 2 O 3 /Ge interface quality by surface and annealing treatments

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Local Dielectric Property of Cubic, Tetragonal, and Monoclinic Hafnium Oxides

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Estimation of step-by-step induced stress in a sequential process integration of nano-scale SOS MOSFETs with high-kgate dielectrics

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Lanthanum-Zirconate and Lanthanum-Aluminate Based High-κ Dielectric Stacks on Silicon Substrates

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Electronic structure of aluminum oxide: ab initio simulations ofαandγphases and comparison with experiment for amorphous films

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The role of silicon alloying addition on the pitting corrosion resistance of an Al-12wt.%Si alloy

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Comparative electron spin resonance study of epi-Lu2O3/(111)Si and a-Lu2O3/(100)Si interfaces: Misfit point defects

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Ab initio simulation of the electronic structure of δ-Ta2O5 with oxygen vacancy and comparison with experiment

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M. W. Akram, Bahniman Ghosh, Punyasloka Bal and Partha Mondal
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Microelectronics Reliability 53 (3) 499 (2013)
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Monolayer FePt nanocrystal self-assembly embedded into atomic-layer-deposited Al2O3 films for nonvolatile memory applications

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A study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator

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BaTiO3Integration with Nanostructured Epitaxial (100), (110), and (111) Germanium for Multifunctional Devices

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Applied Physics Letters 105 (2) 021601 (2014)
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ALD deposited ZrO2 ultrathin layers on Si and Ge substrates: A multiple technique characterization

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Microelectronic Engineering 112 208 (2013)
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First-principles study of Zintl aluminide SrAl2

Alexander Slepko and Alexander A. Demkov
Physical Review B 85 (19) (2012)
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Electro-optical modulation of a silicon waveguide with an “epsilon-near-zero” material

Alok P. Vasudev, Ju-Hyung Kang, Junghyun Park, Xiaoge Liu and Mark L. Brongersma
Optics Express 21 (22) 26387 (2013)
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Defect states in the high-dielectric-constant gate oxide LaAlO3

K. Xiong, J. Robertson and S. J. Clark
Applied Physics Letters 89 (2) 022907 (2006)
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Review on one-dimensional nanostructures prepared by electrospinning and atomic layer deposition

Imre Miklós Szilágyi and Dávidné Nagy
Journal of Physics: Conference Series 559 012010 (2014)
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Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction

M. Kuzmin, P. Laukkanen, M. Yasir, et al.
Physical Review B 92 (16) (2015)
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Thin Films of High-kOxides and ZnO for Transparent Electronic Devices

Sylwia Gieraltowska, Lukasz Wachnicki, Bartlomiej S. Witkowski, Elzbieta Guziewicz and Marek Godlewski
Chemical Vapor Deposition 19 (4-6) 213 (2013)
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Electronic properties of the Zr–ZrO2–SiO2–Si(100) gate stack structure

C. C. Fulton, G. Lucovsky and R. J. Nemanich
Journal of Applied Physics 99 (6) 063708 (2006)
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La2O3 Nano powders by mixture of fuels approach through chemical combustion for dielectric studies

G Nithesh Sharma, K Venkateswara Rao, V Sesha Sai Kumar, et al.
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Electrical and reliability characteristics of polycrystalline silicon thin-film transistors with high-κ Eu2O3 gate dielectrics

Li-Chen Yen, Chia-Wei Hu, Tsung-Yu Chiang, Tien-Sheng Chao and Tung-Ming Pan
Applied Physics Letters 100 (17) 173509 (2012)
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Nanoscale investigations: Surface potential of rare-earth oxide (Re2O3) thin films by kelvin probe force microscopy for next generation CMOS technology

Pawan Kumar, Robin Khosla and Satinder K. Sharma
Surfaces and Interfaces 4 69 (2016)
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Ink-Jet-Printed Organic Thin-Film Transistors for Low-Voltage-Driven CMOS Circuits With Solution-Processed AlO_X Gate Insulator

Sung Hoon Kim, Sun Hee Lee, Youn Goo Kim and Jin Jang
IEEE Electron Device Letters 34 (2) 307 (2013)
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Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers

V. V. Afanas’ev, A. Stesmans, G. Mavrou and A. Dimoulas
Applied Physics Letters 93 (10) 102115 (2008)
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Phase transition in sputtered HfO2 thin films: A qualitative Raman study

G.S. Belo, F. Nakagomi, A. Minko, et al.
Applied Surface Science 261 727 (2012)
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High dielectric material dependence of carbon nanotube field effect transistor considering non‐ballistic conduction

Nirjhor Tahmidur Rouf, Ashfaqul Haq Deep, Rusafa Binte Hassan, et al.
Micro & Nano Letters 9 (10) 620 (2014)
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First-principles calculations of electronic and optical properties of Mn-doped cubic HfO2

Yu-Fen Zhang, Hao Ren, Zhi-Tao Hou, Cheng Wang and Shuai Zhao
Journal of Alloys and Compounds 609 107 (2014)
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The initial atomic layer deposition of HfO2∕Si(001) as followed in situ by synchrotron radiation photoelectron spectroscopy

Massimo Tallarida, Konstantin Karavaev and Dieter Schmeisser
Journal of Applied Physics 104 (6) 064116 (2008)
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From amorphous phase separations to nanostructured materials in sol–gel derived ZrO2:Eu3+/SiO2 and ZnO/SiO2 composites

A. Gaudon, F. Lallet, A. Boulle, et al.
Journal of Non-Crystalline Solids 352 (21-22) 2152 (2006)
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Electron spin resonance observation of an interfacial GePb1-type defect in SiO2/(100)Si1−xGex/SiO2/Si heterostructures

A Stesmans, P Somers and V V Afanas’ev
Journal of Physics: Condensed Matter 21 (12) 122201 (2009)
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Electronic structure of bulk and defect α- and γ-Al2O3

T.V. Perevalov, A.V. Shaposhnikov and V.A. Gritsenko
Microelectronic Engineering 86 (7-9) 1915 (2009)
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Band alignment of atomic layer deposited (ZrO2)x(SiO2)1−x gate dielectrics on Si (100)

Dahlang Tahir, Eun Kyoung Lee, Suhk Kun Oh, et al.
Applied Physics Letters 94 (21) 212902 (2009)
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Characterization of Semiconductor Heterostructures and Nanostructures

Andre Stesmans and Valery V. Afanas'ev
Characterization of Semiconductor Heterostructures and Nanostructures 435 (2008)
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Bilayer Organic–Inorganic Gate Dielectrics for High-Performance, Low-Voltage, Single-Walled Carbon Nanotube Thin-Film Transistors, Complementary Logic Gates, and p–n Diodes on Plastic Substrates

Q. Cao, M.-G. Xia, M. Shim and J. A. Rogers
Advanced Functional Materials 16 (18) 2355 (2006)
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Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures

Srikant Jayanti, Xiangyu Yang, Daniel J. Lichtenwalner and Veena Misra
Applied Physics Letters 96 (9) 092905 (2010)
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Morphology and Composition of Selected High-k Materials and Their Relevance to Dielectric Properties of Thin Films

J. Dąbrowski, G. Lippert, L. Oberbeck, et al.
Journal of The Electrochemical Society 155 (5) G97 (2008)
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DIELECTRIC AND INTERFACE STABILITY OF LaSmO3 FILMS

WEITAO SU, QIUHUI ZHUANG, DEXUAN HUO and BIN LI
Surface Review and Letters 19 (06) 1250064 (2012)
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Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness

Minhyeok Choe, Gunho Jo, Jongsun Maeng, et al.
Journal of Applied Physics 107 (3) 034504 (2010)
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Thermal stability of thin ZrO2 films prepared by a sol-gel process on Si(001) substrates

H. Döscher, G. Lilienkamp, P. Iskra, M. Kazempoor and W. Daum
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28 (4) C5B5 (2010)
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AmorphousHfO2andHf1−xSixOvia a melt-and-quench scheme usingab initiomolecular dynamics

Wanderlã L. Scopel, Antônio J. R. da Silva and A. Fazzio
Physical Review B 77 (17) 172101 (2008)
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Remote phonon scattering in field-effect transistors with a high κ insulating layer

B. Laikhtman and P. M. Solomon
Journal of Applied Physics 103 (1) 014501 (2008)
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Floating Gate Memory with Biomineralized Nanodots Embedded in High-kGate Dielectric

Kosuke Ohara, Ichiro Yamashita, Toshitake Yaegashi, et al.
Applied Physics Express 2 (9) 095001 (2009)
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In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates

K. Devloo-Casier, J. Dendooven, K. F. Ludwig, et al.
Applied Physics Letters 98 (23) 231905 (2011)
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Investigation of forming-gas annealed CeO2 thin film on GaN

Hock Jin Quah, Kuan Yew Cheong, Zainuriah Hassan and Zainovia Lockman
Journal of Materials Science: Materials in Electronics 22 (6) 583 (2011)
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Organic Optoelectronics

Chengliang Wang, Lang Jiang and Wenping Hu
Organic Optoelectronics 95 (2013)
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Thickness dependence of the structural and dielectric properties of epitaxial ZrO2films grown by limited reaction sputtering

Y Zhou, K Sasaki, T Kawae and A Morimoto
Journal of Physics D: Applied Physics 42 (20) 205406 (2009)
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Hafnia-Silica Cryogels: Solvent-Assisted Textural and Catalytic Control in the Citronellal Cyclization

Ciril Jimeno, Jonathan Miras and Jordi Esquena
ChemCatChem 6 (9) 2626 (2014)
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Low-Operating-Voltage Pentacene-Based Transistors and Inverters With Solution-Processed Barium Zirconate Titanate Insulators

Chia-Yu Wei, Wen-Chieh Huang, Chih-Kai Yang, Yen-Yu Chang and Yeong-Her Wang
IEEE Electron Device Letters 32 (12) 1755 (2011)
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Study on a Metal–Insulator–Silicon Hydrogen Sensor With LaTiON as Gate Insulator

Jerry Yu, Gang Chen and Pui To Lai
IEEE Sensors Journal 13 (5) 1534 (2013)
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A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs

Sofia Johansson, Martin Berg, Karl-Magnus Persson and Erik Lind
IEEE Transactions on Electron Devices 60 (2) 776 (2013)
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High-mobility BaSnO3thin-film transistor with HfO2gate insulator

Young Mo Kim, Chulkwon Park, Useong Kim, Chanjong Ju and Kookrin Char
Applied Physics Express 9 (1) 011201 (2016)
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Organic Macromolecular High Dielectric Constant Materials: Synthesis, Characterization, and Applications

Meng Guo, Teruaki Hayakawa, Masa-aki Kakimoto and Theodore Goodson
The Journal of Physical Chemistry B 115 (46) 13419 (2011)
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Electrochemical and passive characterization of a beta type Ti45Zr38Al17 cast rod in nitric acid medium

J. Jayaraj, A. Ravi Shankar and U. Kamachi Mudali
Electrochimica Acta 85 210 (2012)
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Investigations on high-κ dielectrics for low threshold voltage and low leakage zinc oxide thin-film transistor, using material selection methodologies

Kavindra Kandpal and Navneet Gupta
Journal of Materials Science: Materials in Electronics 27 (6) 5972 (2016)
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Preparation and properties of BaTiO3/porous oxide composites

V. V. Sydorchuk, S. V. Khalameida, V. P. Klimenko, V. A. Mikheev and V. A. Zazhigalov
Inorganic Materials 48 (9) 925 (2012)
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Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications

Yogesh Goswami, Pranav Asthana and Bahniman Ghosh
Journal of Semiconductors 38 (5) 054002 (2017)
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Field-effect induced tunability in hyperbolic metamaterials

Georgia T. Papadakis and Harry A. Atwater
Physical Review B 92 (18) (2015)
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Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

Dominik Martin, Johannes Müller, Tony Schenk, et al.
Advanced Materials 26 (48) 8198 (2014)
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Method for disclosing invisible physical properties in metal−ferroelectric−insulator−semiconductor gate stacks

Shigeki Sakai, Wei Zhang and Mitsue Takahashi
Journal of Physics D: Applied Physics 50 (16) 165107 (2017)
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Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

Wei-En Fu, Chia-Wei Chang, Yong-Qing Chang, Chih-Kai Yao and Jiunn-Der Liao
Applied Surface Science 258 (22) 8974 (2012)
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Trap-assisted tunneling, capacitance–voltage characteristics, and surface properties of Sm2O3 thin film on Si substrate

Kian Heng Goh, A. S. M. A. Haseeb and Yew Hoong Wong
Journal of Materials Science: Materials in Electronics 28 (6) 4725 (2017)
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Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack

Mengmeng YANG, Hailing TU, Jun DU, et al.
Journal of Rare Earths 31 (4) 395 (2013)
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Atomic structure and thermally induced transformation of the crystalline BaO/Si(100) junction

M. Kuzmin, P. Laukkanen, M. P. J. Punkkinen, et al.
Physical Review B 90 (23) (2014)
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Energy band alignment at the nanoscale

Jonas Deuermeier, Elvira Fortunato, Rodrigo Martins and Andreas Klein
Applied Physics Letters 110 (5) 051603 (2017)
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Model approach to solving the inverse problem of X-ray reflectometry and its application to the study of the internal structure of hafnium oxide films

Yu. O. Volkov, I. V. Kozhevnikov, B. S. Roshchin, E. O. Filatova and V. E. Asadchikov
Crystallography Reports 58 (1) 160 (2013)
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A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices

Niladri Pratap Maity, Reshmi Maity, R.K. Thapa and Srimanta Baishya
Superlattices and Microstructures 95 24 (2016)
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Structural and optical characterization of Cr2O3 nanostructures: Evaluation of its dielectric properties

M. M. Abdullah, Fahd M. Rajab and Saleh M. Al-Abbas
AIP Advances 4 (2) 027121 (2014)
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Floating Gate Memory With Biomineralized Nanodots Embedded in $\hbox{HfO}_{2}$

Kosuke Ohara, Yosuke Tojo, Ichiro Yamashita, et al.
IEEE Transactions on Nanotechnology 10 (3) 576 (2011)
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Enhanced Capacitance of Composite Anodic ZrO2Films Comprising High Permittivity Oxide Nanocrystals and Highly Resistive Amorphous Oxide Matrix

Hiroki Habazaki, Shun Koyama, Yoshitaka Aoki, Norihito Sakaguchi and Shinji Nagata
ACS Applied Materials & Interfaces 3 (7) 2665 (2011)
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Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon

Yi Zhao, Masahiro Toyama, Koji Kita, Kentaro Kyuno and Akira Toriumi
Applied Physics Letters 88 (7) 072904 (2006)
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Platinum-assisted post deposition annealing of the n-Ge/Y2O3interface

C Zimmermann, O Bethge, B Lutzer and E Bertagnolli
Semiconductor Science and Technology 31 (7) 075009 (2016)
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HfO[sub 2]∕Si interface formation in atomic layer deposition films: An in situ investigation

Massimo Tallarida, Konstantin Karavaev and Dieter Schmeisser
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27 (1) 300 (2009)
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Study of Si kinetics in interfacial SiO2scavenging in HfO2gate stacks

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura and Akira Toriumi
Applied Physics Express 8 (6) 061304 (2015)
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Quantum-confined nanowires as vehicles for enhanced electrical transport

S Noor Mohammad
Nanotechnology 23 (28) 285707 (2012)
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An integrated high temperature environmental cell for atom probe tomography studies of gas-surface reactions: Instrumentation and results

S. Dumpala, S.R. Broderick, P.A.J. Bagot and K. Rajan
Ultramicroscopy 141 16 (2014)
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Designing graphene absorption in a multispectral plasmon-enhanced infrared detector

Michael D. Goldflam, Zhe Fei, Isaac Ruiz, et al.
Optics Express 25 (11) 12400 (2017)
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High-k Gate Dielectrics for CMOS Technology

Shijie Wang, Yuanping Feng and Alfred C. H. Huan
High-k Gate Dielectrics for CMOS Technology 293 (2012)
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Physical and electrical characterization of atomic-layer-deposited Ru nanocrystals embedded into Al2O3 for memory applications

Min Zhang, Wei Chen, Shi-Jin Ding, et al.
Journal of Physics D: Applied Physics 41 (3) 032007 (2008)
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Reliability of La-Doped Hf-Based Dielectrics nMOSFETs

Chang Yong Kang, P.D. Kirsch, Byoung Hun Lee, Hsing-Huang Tseng and R. Jammy
IEEE Transactions on Device and Materials Reliability 9 (2) 171 (2009)
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Probing defects at interfaces and interlayers of low-dimensional Si/insulator (HfO2; LaAlO3) structures by electron spin resonance

A. Stesmans and V.V. Afanas’ev
Physica B: Condensed Matter 401-402 550 (2007)
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Internal Photoemission Spectroscopy

Valery V. Afanas’ev
Internal Photoemission Spectroscopy 255 (2014)
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Determining the Optimized Layer-by-Layer Film Architecture With Dendrimer/Carbon Nanotubes for Field-Effect Sensors

Marcos A. M. Sousa, Jose R. Siqueira, Andres Vercik, Michael J Schoning and Osvaldo N. Oliveira
IEEE Sensors Journal 17 (6) 1735 (2017)
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LCAO Calculations of (001) Surface Oxygen Vacancy Structure in Y-Doped BaZrO3

A. V. Bandura, R. A. Evarestov and D. D. Kuruch
Integrated Ferroelectrics 123 (1) 1 (2011)
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Atomic and electronic structure of gadolinium oxide

Timofey Viktorovich Perevalov, Andrey Evgenievich Dolbak, Vasilii Aleksandrovich Shvets, et al.
The European Physical Journal Applied Physics 65 (1) 10702 (2014)
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Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties

Shankar Swaminathan, Yun Sun, Piero Pianetta and Paul C. McIntyre
Journal of Applied Physics 110 (9) 094105 (2011)
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Simulation of Graphene Base Transistors With Bilayer Tunnel Oxide Barrier: Model Calibration and Performance Projection

Valerio Di Lecce, Antonio Gnudi, Elena Gnani, Susanna Reggiani and Giorgio Baccarani
IEEE Electron Device Letters 37 (11) 1489 (2016)
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Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- application

A. Fissel, M. Czernohorsky and H.J. Osten
Superlattices and Microstructures 40 (4-6) 551 (2006)
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Superiority of DFT+U with non-linear core correction for open-shell binary rare-earth metal oxides: a case study of native point defects in cerium oxides

Bolong Huang
Philosophical Magazine 94 (26) 3052 (2014)
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Characterization of Semiconductor Heterostructures and Nanostructures

Andre Stesmans and Valery V. Afanas’ev
Characterization of Semiconductor Heterostructures and Nanostructures 685 (2013)
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Electronic structure and defects of high dielectric constant gate oxide La2Hf2O7

D. Liu, K. Tse and J. Robertson
Applied Physics Letters 90 (6) 062901 (2007)
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Band Alignment at Molybdenum Disulphide/Boron Nitride/Aluminum Oxide Interfaces

Jennifer DiStefano, Yu-Chuan Lin, Joshua Robinson, et al.
Journal of Electronic Materials 45 (2) 983 (2016)
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Fabrication of precision integrated capacitors

Jisu Jiang and Paul A. Kohl
Thin Solid Films 634 15 (2017)
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Interface models and processing technologies for surface passivation and interface control in III–V semiconductor nanoelectronics

H. Hasegawa and M. Akazawa
Applied Surface Science 254 (24) 8005 (2008)
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Optimizing the internal electric field distribution of alternating current driven organic light-emitting devices for a reduced operating voltage

Markus Fröbel, Simone Hofmann, Karl Leo and Malte C. Gather
Applied Physics Letters 104 (7) 071105 (2014)
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Effects of oxygen deficiency in the sol–gel ZrOxfilm on the electrical properties of Au/ZrOx/n-type Si/In devices

Wei-Chung Chen, Yow-Jon Lin, Ya-Hui Chen and Hsing-Cheng Chang
Semiconductor Science and Technology 25 (5) 055003 (2010)
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Chemistry of surface nanostructures in lead precursor-rich PbZr0.52Ti0.48O3 sol–gel films

I. Gueye, G. Le Rhun, P. Gergaud, et al.
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Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN

Rathnait D. Long, Aryan Hazeghi, Marika Gunji, Yoshio Nishi and Paul C. McIntyre
Applied Physics Letters 101 (24) 241606 (2012)
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Integration of Amorphous $\hbox{Yb}_{2}\hbox{O}_{3}$ and Crystalline $\hbox{ZrTiO}_{4}$ as Gate Stack for Aggressively Scaled MOS Devices

Yung-Hsien Wu, Rong-Jhe Lyu, Min-Lin Wu, Lun-Lun Chen and Chia-Chun Lin
IEEE Electron Device Letters 33 (3) 426 (2012)
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Synthesis of germanium nanocrystals in hafnium aluminum oxide matrix

F. Zheng, H. G. Chew, W. K. Choi, J. X. Zhang and H. L. Seng
Journal of Applied Physics 101 (11) 114310 (2007)
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Cathodo- and photoluminescence increase in amorphous hafnium oxide under annealing in oxygen

E. V. Ivanova, M. V. Zamoryanskaya, V. A. Pustovarov, et al.
Journal of Experimental and Theoretical Physics 120 (4) 710 (2015)
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High-k Gate Dielectrics for CMOS Technology

Hong-Liang Lu and David Wei Zhang
High-k Gate Dielectrics for CMOS Technology 31 (2012)
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Solar water oxidation in sputter-deposited nanocrystalline WO3 photoanodes via tuning of Ar:O2 flow rate combinations

Siao Li Liew, Wei Wang, Surani Bin Dolmanan, Glen Tai Wei Goh and Dongzhi Chi
Materials Chemistry and Physics 143 (3) 1171 (2014)
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Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices

Ashwath Rao, Priyanka Chaurasia and B. R. Singh
Radiation Effects and Defects in Solids 171 (3-4) 187 (2016)
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Electrode effects on the conduction mechanisms in HfO2-based metal-insulator-metal capacitors

F. El Kamel, P. Gonon, C. Vallée and C. Jorel
Journal of Applied Physics 106 (6) 064508 (2009)
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Atomic layer deposition of HfO2 thin films using H2O2 as oxidant

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Applied Surface Science 301 451 (2014)
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Activation of hole charge carriers and generation of electromotive force in gabbro blocks subjected to nonuniform loading

Akihiro Takeuchi and Toshiyasu Nagao
Journal of Geophysical Research: Solid Earth 118 (3) 915 (2013)
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Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

Jia Sun, Jie Jiang, Aixia Lu, Bin Zhou and Qing Wan
IEEE Transactions on Electron Devices 58 (3) 764 (2011)
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Improving dielectric performance in anodic aluminum oxide via detection and passivation of defect states

M. Mibus, C. Jensen, X. Hu, et al.
Applied Physics Letters 104 (24) 244103 (2014)
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Gate-Stack Engineering in $n$-Type Ultrascaled Si Nanowire Field-Effect Transistors

Mathieu Luisier and Olaf Schenk
IEEE Transactions on Electron Devices 60 (10) 3325 (2013)
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Atomic layer deposited zirconium oxide electron injection layer for efficient organic light emitting diodes

Maria Vasilopoulou, Stella Kennou, Spyridon Ladas, et al.
Organic Electronics 14 (1) 312 (2013)
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Structural and Electronic Properties of GaN (0001)/α-Al2O3(0001) Interface

M. B. Pereira, E. M. Diniz and S. Guerini
Advances in Condensed Matter Physics 2015 1 (2015)
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Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150 °C

Xiaoli Xu, Qingyu Cui, Yizheng Jin and Xiaojun Guo
Applied Physics Letters 101 (22) 222114 (2012)
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Optical properties and thermal stability of LaYbO3 ternary oxide for high-k dielectric application

Wei-tao Su, Li Yang and Bin Li
Applied Surface Science 257 (7) 2526 (2011)
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Analysis of Off-State Leakage Current Characteristics and Mechanisms of Nanoscale MOSFETs with a High- k Gate Dielectric

Hong-Xia Liu and Fei Ma
Chinese Physics Letters 29 (12) 127301 (2012)
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K. Xiong, J. Robertson and S.J. Clark
Microelectronic Engineering 85 (1) 65 (2008)
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Reactively sputtered hafnium oxide on silicon dioxide: Structural and electrical properties

Vl. Kolkovsky, K. Lukat, E. Kurth and C. Kunath
Solid-State Electronics 106 63 (2015)
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White light emission from alternating current organic light-emitting devices using high frequency color-mixing

Markus Fröbel, Ajay Perumal, Tobias Schwab, et al.
physica status solidi (a) 210 (11) 2439 (2013)
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Optical susceptibilities in singly charged ZnO colloidal quantum dots embedded in different dielectric matrices

Zaiping Zeng, Emmanuel Paspalakis, Christos S. Garoufalis, Andreas F. Terzis and Sotirios Baskoutas
Journal of Applied Physics 113 (5) 054303 (2013)
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Temperature dependence of electrical transport properties of La4BaCu5−xCoxO13+δconducting oxide thin films

Akihiro Tsuruta, Yusuke Tsujioka, Yutaka Yoshida, et al.
Japanese Journal of Applied Physics 55 (4S) 04EJ08 (2016)
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Misfit point defects at the epitaxial Lu2O3/(111)Si interface revealed by electron spin resonance

A. Stesmans, P. Somers, V. V. Afanas’ev, et al.
Applied Physics Letters 93 (10) 103505 (2008)
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Local Dielectric Property of Cubic, Tetragonal, and Monoclinic Hafnium Oxides

Masato Senami, Yasushi Tsuchida, Akinori Fukushima, Yuji Ikeda and Akitomo Tachibana
Japanese Journal of Applied Physics 51 031101 (2012)
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Negative differential resistance in ultrathin Ge-on-insulator FETs

D Kazazis, A Zaslavsky, E Tutuc, N A Bojarczuk and S Guha
Semiconductor Science and Technology 22 (1) S1 (2007)
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Electrochemical and surface analyses of nanostructured Ti–24Nb–4Zr–8Sn alloys in simulated body solution

J. Li, S.J. Li, Y.L. Hao, et al.
Acta Biomaterialia 10 (6) 2866 (2014)
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A study of the structure of (HfO2) x (Al2O3)1−x /Si films by X-ray photoelectron spectroscopy

V. V. Kaichev, Yu. V. Dubinin, T. P. Smirnova and M. S. Lebedev
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Mechanical properties of ultra-thin HfO2 films studied by nano scratches tests

Wei-En Fu, Yong-Qing Chang, Chia-Wei Chang, Chih-Kai Yao and Jiunn-Der Liao
Thin Solid Films 529 402 (2013)
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Model based precise analysis of the injection currents in Al/ZrO2/Al2O3/ZrO2/SiO2/Si structures for use in charge trapping non-volatile memory devices

N. Novkovski, A. Paskaleva, A. Skeparovski and D. Spassov
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L. Wang, Paul K. Chu, K. Xue and J. B. Xu
Applied Physics Letters 94 (3) 032904 (2009)
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Oxygen vacancy estimation of high k metal gate using thermal dynamic model

H. L. Chang and M. S. Liang
Applied Physics Letters 97 (4) 041912 (2010)
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Oxygen deficiency defects in amorphous Al2O3

T. V. Perevalov, O. E. Tereshenko, V. A. Gritsenko, et al.
Journal of Applied Physics 108 (1) 013501 (2010)
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Electronic structure of α-Al2O3: Ab initio simulations and comparison with experiment

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JETP Letters 85 (3) 165 (2007)
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Gate leakage current partitioning in nanoscale double gate MOSFETs, using compact analytical model

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X-ray reflection spectroscopy of the HfO2/SiO2/Si system in the region of the O–K absorption edge

E.O. Filatova, P. Jonnard and J.-M. André
Thin Solid Films 500 (1-2) 219 (2006)
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Compositional, structural and electronic characteristics of HfO2 and HfSiO dielectrics prepared by radio frequency magnetron sputtering

Li-ping Feng, Zheng-tang Liu and Ya-ming Shen
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Formation of hybrid hafnium oxide by applying sacrifacial silicon film

Chiung-Wei Lin, Bo-Shen Zheng and Jing-Wei Huang
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Influence of post deposition annealing on Y2O3-gated GaAs MOS capacitors and their reliability issues

P.S. Das and A. Biswas
Microelectronic Engineering 88 (3) 282 (2011)
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Band offsets of high K gate oxides on high mobility semiconductors

J. Robertson and B. Falabretti
Materials Science and Engineering: B 135 (3) 267 (2006)
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Enhanced thermoelectric performance through carrier scattering at spherical nanoparticles in Bi0.5Sb1.5Te3/Ta2O5 composites

Eun Bin Kim, Peyala Dharmaiah, Dongwon Shin, Kap-Ho Lee and Soon-Jik Hong
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Dielectric and insulating properties of SrTiO3/Si heterostructure controlled by cation concentration

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Growth and dielectric properties of tetragonal ZrO2films by limited reaction sputtering

Y Zhou, N Kojima and K Sasaki
Journal of Physics D: Applied Physics 41 (17) 175414 (2008)
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Tailoring resistive switching properties of TiO2with controlled incorporation of oxide nanoparticles

Alejandro Cristians Rios, Lorena Aarão-Rodrigues, Alisson Ronieri Cadore, et al.
Materials Research Express 3 (8) 085024 (2016)
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Charge Trapping and Decay Mechanism in Post Deposition Annealed Er₂O₃ MOS Capacitors by Nanoscopic and Macroscopic Characterization

Robin Khosla, Pawan Kumar and Satinder K. Sharma
IEEE Transactions on Device and Materials Reliability 15 (4) 610 (2015)
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Dielectrics in Electric Fields, Second Edition

Dielectrics in Electric Fields, Second Edition 289 (2016)
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Nonvolatile memory capacitors based on Al2O3 tunneling and HfO2 blocking layers with charge storage in atomic-layer-deposited Pt nanocrystals

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Applied Surface Science 289 332 (2014)
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Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3

V.V. Afanas’ev, S. Shamuilia, M. Badylevich, et al.
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New Precursors for the CVD of Zirconium and Hafnium Oxide Films

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Leakage current in high dielectric oxides: Role of defect-induced energies

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Journal of Applied Physics 113 (18) 184504 (2013)
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Electroluminescence from light-emitting devices with erbium-doped TiO2 films: Enhancement effect of yttrium codoping

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Influence of Co-sputtered HfO2-Si Gate Dielectric in IZO-based thin Film Transistors

Dong Kyu Cho and Moonsuk Yi
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Formation of W/HfO2/Si gate structures using in situ magnetron sputtering and rapid thermal annealing

E. A. Bogoyavlenskaya, V. I. Rudakov, Yu. I. Denisenko, V. V. Naumov and A. E. Rogozhin
Technical Physics 59 (5) 711 (2014)
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Ab initio modeling of electronic and optical properties of hafnium silicates

Li-Ping Feng, Zheng-Tang Liu and Bing Xu
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UV-protection and photocatalytic properties of electrospun polyacrylonitrile nanofibrous mats coated with TiO2 nanofilm via sol–gel

Saeed Dadvar, Hossein Tavanai, Hamid Dadvar, Mohammad Morshed and Farhad E. Ghodsi
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Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition

B. Dlubak, P. R. Kidambi, R. S. Weatherup, S. Hofmann and J. Robertson
Applied Physics Letters 100 (17) 173113 (2012)
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Crystallinity of Supercooled Oxide Melts Quantified by Electrical Capacitance Measurements

Yusuke Harada, Noritaka Saito and Kunihiko Nakashima
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Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods

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Direct tunneling gate current model for symmetric double gate junctionless transistor with SiO2/high-kgate stacked dielectric

S. Intekhab Amin and R. K. Sarin
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Effects of successive additions of two capping ligands on the structural properties of PbO nanoparticles

Uzma K. H. Bangi, Wooje Han, Byungwook Yoo and Hyung-Ho Park
Journal of Nanoparticle Research 15 (11) (2013)
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Changes in Electronic Structure of La[sub x]Al[sub y]O Films as a Function of Postdeposition Annealing Temperature

J. W. Ma, W. J. Lee, M.-H. Cho, et al.
Journal of The Electrochemical Society 158 (3) G79 (2011)
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Hydrogen shuttling near Hf-defect complexes in Si∕SiO2∕HfO2 structures

A. G. Marinopoulos, I. Batyrev, X. J. Zhou, et al.
Applied Physics Letters 91 (23) 233503 (2007)
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Effect of Low Power Deposition and Low Oxidation Temperature on the Interfacial and Structural Properties of sputtered HfO2 Gate Dielectrics

Auxence Minko, Gustavo S. Belo, Sergei Rudenja and Douglas A. Buchanan
MRS Proceedings 1394 mrsf11-1394-m04-10 (2012)
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The influence of Coulomb centers located in HfO[sub 2]/SiO[sub 2] gate stacks on the effective electron mobility

Sylvain Barraud, Olivier Bonno and Mikaël Cassé
Journal of Applied Physics 104 (7) 073725 (2008)
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Electrostatic Gating of Ultrathin Films

A.M. Goldman
Annual Review of Materials Research 44 (1) 45 (2014)
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Studies of the structural, electronic and dielectric properties of Ca1−xSrxTiO3

HaiChuan Chen, JianPing Long, Lijun Yang, XueSong Wei and KaMa Huang
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The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO 2 high-k dielectrics

Ruo Zheng Wang, Sheng Li Wu, Xin Yu Li and Jin Tao Zhang
Solid-State Electronics 133 6 (2017)
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Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium

N. Jain, Y. Zhu, D. Maurya, et al.
Journal of Applied Physics 115 (2) 024303 (2014)
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Effect of crystallographic structure on electrical and mechanical characteristics of Sm2O3-Doped CeO2 films

M. Hartmanová, V. Navrátil, V. Buršíková, F. Kundracik and C. Mansilla
Russian Journal of Electrochemistry 47 (5) 505 (2011)
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High-k Gate Dielectrics for CMOS Technology

Fu-Chien Chiu, Somnath Mondal and Tung-Ming Pan
High-k Gate Dielectrics for CMOS Technology 111 (2012)
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High mobility field effect transistor of SnOx on glass using HfOx gate oxide

Chanjong Ju, Chulkwon Park, Hyeonseok Yang, et al.
Current Applied Physics 16 (3) 300 (2016)
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Accurate Calculation of Gate Tunneling Current in Double-Gate and Single-Gate SOI MOSFETs Through Gate Dielectric Stacks

Ferney A. Chaves, David Jimenez, Francisco J. Garcia Ruiz, Andrés Godoy and Jordi Sune
IEEE Transactions on Electron Devices 59 (10) 2589 (2012)
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Hafnium zirconate gate dielectric for advanced gate stack applications

R. I. Hegde, D. H. Triyoso, S. B. Samavedam and B. E. White
Journal of Applied Physics 101 (7) 074113 (2007)
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Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric

Ming Wen, Jingping Xu, Lu Liu, Pui-To Lai and Wing-Man Tang
IEEE Transactions on Electron Devices 64 (3) 1020 (2017)
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Oxide Ultrathin Films

Gennadi Bersuker, Keith McKenna and Alexander Shluger
Oxide Ultrathin Films 101 (2012)
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Stability of HfO2/SiOx/Si surficial films at ultralow oxygen activity

E. Jud, M. Tang and Y.-M. Chiang
Journal of Applied Physics 103 (11) 114108 (2008)
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Functional Metal Oxides

Lily Mandal, Weinan Lin, James Lourembam, Satishchandra Ogale and Tom Wu
Functional Metal Oxides 419 (2013)
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Atomic Layer Deposition of Aluminum Oxide for Surface Passivation of InGaAs∕InP Heterojunction Bipolar Transistors

R. Driad, F. Benkhelifa, L. Kirste, M. Mikulla and O. Ambacher
Journal of The Electrochemical Society 158 (12) H1279 (2011)
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Effects of plasma immersion ion nitridation on dielectric properties of HfO2

L. Wang, K. Xue, J. B. Xu, A. P. Huang and Paul K. Chu
Applied Physics Letters 90 (12) 122901 (2007)
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Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices

O. Khaldi, F. Jomni, P. Gonon, C. Mannequin and B. Yangui
Applied Physics A 116 (4) 1647 (2014)
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Oxygen vacancy in monoclinic HfO2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments

Peter Broqvist and Alfredo Pasquarello
Applied Physics Letters 89 (26) 262904 (2006)
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MOS Devices With High-κ (ZrO$_2$) $_x$(La $_2$O$_3$) $_{1-x}$ Alloy as Gate Dielectric Formed by Depositing ZrO $_2$/La$_2$O $_3$/ZrO$_2$ Laminate and Annealing

Yung-Hsien Wu, Lun-Lun Chen, Rong-Jhe Lyu, et al.
IEEE Transactions on Nanotechnology 11 (3) 483 (2012)
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Ceramics Science and Technology

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Ceramics Science and Technology 291 (2014)
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Microencapsulation of Moisture-Sensitive CaS:Eu[sup 2+] Particles with Aluminum Oxide

N. Avci, J. Musschoot, P. F. Smet, et al.
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Solvothermal approach for low temperature deposition of aluminium oxide thin films

XiaoFei Duan, Nguyen H. Tran, Nicholas K. Roberts and Robert N. Lamb
Thin Solid Films 518 (15) 4290 (2010)
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Defects in Microelectronic Materials and Devices

J Robertson, K Xiong and K Tse
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High temperature thermal stability of the HfO2/Ge (100) interface as a function of surface preparation studied by synchrotron radiation core level photoemission

Rajesh Kumar Chellappan, Durga Rao Gajula, David McNeill and Greg Hughes
Applied Surface Science 292 345 (2014)
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Current transport analysis of ZrO2 thin films: Effects of post-deposition annealing

Heejun Jeong
Journal of the Korean Physical Society 65 (11) 1903 (2014)
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Electrochemical characterization of nanostructured Ti–24Nb–4Zr–8Sn alloy in 3.5% NaCl solution

J. Li, S.J. Li, Y.L. Hao and R. Yang
International Journal of Hydrogen Energy 39 (30) 17452 (2014)
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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Yi Zhao, Koji Kita and Akira Toriumi
Applied Physics Letters 96 (24) 242901 (2010)
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Electron-Related Phenomena at the $\hbox{TaN/Al}_{2} \hbox{O}_{3}$ Interface

Rosario Rao, Paolo Lorenzi, Gabriella Ghidini, Fabrizio Palma and Fernanda Irrera
IEEE Transactions on Electron Devices 57 (3) 637 (2010)
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Analytical modeling of direct tunneling current through gate stacks for the determination of suitable high-kdielectrics for nanoscale double-gate MOSFETs

Ghader Darbandy, Romain Ritzenthaler, François Lime, et al.
Semiconductor Science and Technology 26 (4) 045002 (2011)
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Method to characterize dielectric properties of powdery substances

M. Tuhkala, J. Juuti and H. Jantunen
Journal of Applied Physics 114 (1) 014108 (2013)
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Atomic layer deposition of scandium-based oxides

Laura Nyns, Judit G. Lisoni, Geert Van den Bosch, Sven Van Elshocht and Jan Van Houdt
physica status solidi (a) 211 (2) 409 (2014)
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Ceramics Science and Technology

Sanjay Mathur, Aadesh Pratap Singh, Ralf Müller, et al.
Ceramics Science and Technology 291 (2012)
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Fabrication and Characterization of Polymer-Enhanced TSVs, Inductors, and Antennas for Mixed-Signal Silicon Interposer Platforms

Paragkumar A. Thadesar and Muhannad S. Bakir
IEEE Transactions on Components, Packaging and Manufacturing Technology 6 (3) 455 (2016)
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Oxygen vacancy in Al2O3: Photoluminescence study and first-principle simulation

V.A. Pustovarov, T.V. Perevalov, V.A. Gritsenko, T.P. Smirnova and A.P. Yelisseyev
Thin Solid Films 519 (19) 6319 (2011)
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Progress of High-k Dielectrics Applicable to SONOS-Type Nonvolatile Semiconductor Memories

Zhenjie Tang, Zhiguo Liu and Xinhua Zhu
Transactions on Electrical and Electronic Materials 11 (4) 155 (2010)
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Passivation of oxygen vacancy states in HfO2 by nitrogen

K. Xiong, J. Robertson and S. J. Clark
Journal of Applied Physics 99 (4) 044105 (2006)
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Physics-based surface potential, electric field and drain current model of aδp+Si1–xGexgate–drain underlap nanoscale n-TFET

Rupam Goswami, Brinda Bhowmick and Srimanta Baishya
International Journal of Electronics 1 (2016)
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Thermal stability of amorphous LaScO3 films on silicon

L. F. Edge, D. G. Schlom, S. Rivillon, et al.
Applied Physics Letters 89 (6) 062902 (2006)
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High-k Gate Dielectrics for CMOS Technology

Yi Zhao
High-k Gate Dielectrics for CMOS Technology 185 (2012)
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Interface-controlled high dielectric constant Al2O3/TiOx nanolaminates with low loss and low leakage current density for new generation nanodevices

Geunhee Lee, Bo-Kuai Lai, Charudatta Phatak, Ram S. Katiyar and Orlando Auciello
Journal of Applied Physics 114 (2) 027001 (2013)
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Interfacial atomic structures, energetics and band offsets of Ge:ZrO2 interfaces

Koon-Yiu Tse and John Robertson
Journal of Applied Physics 100 (9) 093713 (2006)
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High-temperature thermal stability study of 1 nm Al2O3deposited on InAs surfaces investigated by synchrotron radiation based photoemission spectroscopy

Rajesh Kumar Chellappan, Durga Rao Gajula, David McNeill and Greg Hughes
Journal of Physics D: Applied Physics 47 (5) 055107 (2014)
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Band gaps and defect levels in functional oxides

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Thin Solid Films 496 (1) 1 (2006)
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Interfacial and electrical properties of radio frequency sputtered ultra-thin TiO2 film for gate oxide applications

Madhuchhanda Nath and Asim Roy
Journal of Materials Science: Materials in Electronics 26 (11) 9107 (2015)
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High-K dielectrics for the gate stack

Jean-Pierre Locquet, Chiara Marchiori, Maryline Sousa, Jean Fompeyrine and Jin Won Seo
Journal of Applied Physics 100 (5) 051610 (2006)
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The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers

P. Thangadurai, W.D. Kaplan, V. Mikhelashvili and G. Eisenstein
Microelectronics Reliability 49 (7) 716 (2009)
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Formation of thin-film HfO2/Si(100) structures by high-frequency magnetron sputtering

V. I. Rudakov, E. A. Bogoyavlenskaya, Yu. I. Denisenko and V. V. Naumov
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Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient

Yew Hoong Wong and Kuan Yew Cheong
Electronic Materials Letters 8 (1) 47 (2012)
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Control of the Dirac point in graphene by UV light

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Electronic stopping force of 12C, 28Si and 63Cu ions in HfO2 and SiO2 dielectric films

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Toby Xu, Coskun Tekes and F. Degertekin
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 61 (12) 2121 (2014)
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Deposition and post-deposition annealing of thin Y2O3 film on n-type Si in argon ambient

Hock Jin Quah and Kuan Yew Cheong
Materials Chemistry and Physics 130 (3) 1007 (2011)
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Comprehensive Semiconductor Science and Technology

J. Robertson
Comprehensive Semiconductor Science and Technology 132 (2011)
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Soft x-ray photoemission study of the thermal stability of the Al2O3/Ge (100) interface as a function of surface preparation

Rajesh Kumar Chellappan, Durga Rao Gajula, David McNeill and Greg Hughes
Journal of Applied Physics 114 (8) 084312 (2013)
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Electrical instability in LaLuO3 based metal–oxide–semiconductor capacitors and role of the metal electrodes

Rosario Rao and Fernanda Irrera
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 31 (1) 01A116 (2013)
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Radiation Induced Charge Trapping in Sputtered ${\rm ZrO}_{\rm 2} \!\! : \!\! {\rm N}$ Dielectric Thin Films on Silicon

Ashwath Rao, Joyline D'sa, Saurabh Goyal and B. R. Singh
IEEE Transactions on Nuclear Science 61 (4) 2397 (2014)
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Atomic and electronic structures of lutetium oxide Lu2O3

V. V. Kaichev, T. I. Asanova, S. B. Erenburg, et al.
Journal of Experimental and Theoretical Physics 116 (2) 323 (2013)
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A Thin-Film Transistor With High Drain Current Induced by a Trap-Assisted Electric Double Layer

Ankita Gangwar and Baquer Mazhari
IEEE Transactions on Electron Devices 63 (12) 4776 (2016)
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Nanoscale CMOS

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Ge-Based Nonvolatile Memory Formed on Si Substrate with Ge-Stabilized Tetragonal ZrO2 as Charge Trapping Layer

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Journal of The Electrochemical Society 158 (4) H410 (2011)
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Correlation between phase and optical properties of yttrium-doped hafnium oxide nanocrystalline thin films

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Ferroelectric-Gate Field Effect Transistor Memories

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Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators

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Trapped charge dynamics in a sol–gel based TiO2high-kgate dielectric silicon metal–oxide–semiconductor field effect transistor

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HfO2-assisted SiO2 reduction in HfO2/SiO2/Si stacks

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio and Akira Toriumi
Thin Solid Films 557 272 (2014)
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Effect of post-deposition annealing temperature on CeO2 thin film deposited on silicon substrate via RF magnetron sputtering technique

Soo Kiet Chuah, Kuan Yew Cheong, Zainovia Lockman and Zainuriah Hassan
Materials Science in Semiconductor Processing 14 (2) 101 (2011)
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Capacitance–voltage characteristics of sub-nanometric Al2O3 / TiO2 laminates: dielectric and interface charge densities

Abdelkader Kahouli, Marwa Ben Elbahri, Oleg Lebedev and Ulrike Lüders
Journal of Physics: Condensed Matter 29 (27) 275301 (2017)
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Titania/Alumina Bilayer Gate Dielectrics for Ge MOS Devices: Frequency- and Temperature-Dependent Electrical Characteristics

Shankar Swaminathan and Paul C. McIntyre
Electrochemical and Solid-State Letters 13 (9) G79 (2010)
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Migration of oxygen vacancy in HfO2 and across the HfO2∕SiO2 interface: A first-principles investigation

Nathalie Capron, Peter Broqvist and Alfredo Pasquarello
Applied Physics Letters 91 (19) 192905 (2007)
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Conduction and field induced degradation in thin ZrO2 films sputtered in nitrogen containing plasma on silicon

Ashwath Rao, Joyline D’sa, Saurabh Goyal and B. R. Singh
Journal of Materials Science: Materials in Electronics 25 (3) 1583 (2014)
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Analytical modeling of the gate tunneling leakage for the determination of adequate high-k dielectrics in double-gate SOI MOSFETs at the 22nm node

Ghader Darbandy, Romain Ritzenthaler, Francois Lime, et al.
Solid-State Electronics 54 (10) 1083 (2010)
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Novel photodefined polymer-embedded vias for silicon interposers

Paragkumar A Thadesar and Muhannad S Bakir
Journal of Micromechanics and Microengineering 23 (3) 035003 (2013)
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Electrochemical Mechanical Polishing of Copper with High Permittivity Abrasives

Weisi Li, Dongming Guo, Zhuji Jin, Zhe Wang and Zewei Yuan
Materials and Manufacturing Processes 28 (2) 207 (2013)
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Characterization of the interface between the Hf-based high-k thin film and the Si using spatially resolved electron energy-loss spectroscopy

X.F. Wang, Quan Li, P.F. Lee, J.Y. Dai and X.G. Gong
Micron 41 (1) 15 (2010)
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Nature and stability of the (100)Si∕LaAlO3 interface probed by paramagnetic defects

A. Stesmans, K. Clémer, V. V. Afanas’ev, L. F. Edge and D. G. Schlom
Applied Physics Letters 89 (11) 112121 (2006)
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Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs

Yang Liu, A. Shanware, L. Colombo and R. Dutton
IEEE Electron Device Letters 27 (6) 489 (2006)
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Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer

Kuniaki HASHIMOTO, Akio OHTA, Hideki MURAKAMI, Seiichiro HIGASHI and Seiichi MIYAZAKI
IEICE Transactions on Electronics E96.C (5) 674 (2013)
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First principles study of structural and electronic properties of cubic phase of ZrO2 and HfO2

Yong-Liang Yang, Xiao-Li Fan, Chong Liu and Run-Xin Ran
Physica B: Condensed Matter 434 7 (2014)
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Nanocrystalline LaYSrO films for liquid-crystal alignment via a solution process

Seon Yeong Kim, Hong-Gyu Park, Min-Jae Cho, Hae-Chang Jeong and Dae-Shik Seo
Liquid Crystals 41 (7) 940 (2014)
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Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO 2 and fabricated at low temperature

Joel Molina, Reydezel Torres, Alok Ranjan and Kin-Leong Pey
Materials Science in Semiconductor Processing 66 191 (2017)
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Ultrahigh resolution imaging of local structural distortions in intergrowth tungsten bronzes

A.I. Kirkland, J. Sloan and S. Haigh
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Handbook of Cleaning in Semiconductor Manufacturing

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Handbook of Cleaning in Semiconductor Manufacturing 237 (2011)
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Study on the surface erosion route to the fabrication of TiO2 hollow spheres

Liu Lei, Cui Yuming, Li Bo, Zhou Xingfu and Ding Weiping
Applied Surface Science 256 (8) 2596 (2010)
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First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si–SiO2–HfO2 stack

Peter Broqvist, Audrius Alkauskas, Julien Godet and Alfredo Pasquarello
Journal of Applied Physics 105 (6) 061603 (2009)
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Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

Shankar Swaminathan, Michael Shandalov, Yasuhiro Oshima and Paul C. McIntyre
Applied Physics Letters 96 (8) 082904 (2010)
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Photonics

Robert H. Lipson
Photonics 133 (2015)
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Understanding Structure and Stability of Monoclinic Zirconia Surfaces from First-Principles Calculations

Andrey S. Bazhenov and Karoliina Honkala
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Band gaps and dielectric constants of amorphous hafnium silicates: A first-principles investigation

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High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ${\rm ZrO}_{2}$ Gate Dielectric

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IEEE Electron Device Letters 35 (5) 554 (2014)
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Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

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Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

Jiro Yota, Hong Shen and Ravi Ramanathan
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High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics

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Comparative Study of Single and Double Gate All Around Cylindrical FET Structures for High-K Dielectric Materials

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Design of Grating Al2O3 Passivation Structure Optimized for High-Efficiency Cu(In,Ga)Se2 Solar Cells

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Computed and Experimental Absorption Spectra of the Perovskite CH3NH3PbI3

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Impact of ultrathin Al2O3 interlayer on thermal stability and leakage current properties of TiO2/Al2O3 stacking dielectrics

Hong-Bo Wang, Da-Yan Ma, Fei Ma and Ke-Wei Xu
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Operation Characteristics of Gate-All-Around Junctionless Flash Memory Devices With Si₃N₄/ZrO-Based Stacked Trapping Layer

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MgZnO Thin Film Transistors on Glass With Blocking Voltage of 900 V

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Electrostatic Modulation of the Superfluid Density in an UltrathinLa2−xSrxCuO4Film

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Al2O3 and HfO2 Atomic Layers Deposited in Single and Multilayer Configurations on Titanium and on Stainless Steel for Biomedical Applications

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Implementation of Low-Power Electronic Devices Using Solution-Processed Tantalum Pentoxide Dielectric

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Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode

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First principle study of single electron transistor based on metal-organic complex of dibenzothiophene

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Design and analysis of ultra-thin dielectric film embedded nanoscale double-gate MOSFETs for boosting logic performance

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Microelectronic Engineering 178 112 (2017)
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Interface formation energy, bonding, energy band alignment in α-NaYF 4 related core shell models: For future multi-layer core shell luminescence materials

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Quantitative Analysis of Shape-Sensitive Interaction of a Charged Nanoplate and a Charged Nanowire

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PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases

David Zanders, Engin Ciftyurek, Ersoy Subaşı, Niklas Huster, Claudia Bock, Aleksander Kostka, Detlef Rogalla, Klaus Schierbaum and Anjana Devi
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Band alignment and interfacial chemical structure of the HfLaO/InGaZnO4 heterojunction investigated by x-ray photoelectron spectroscopy

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Deep and fast free-space electro-absorption modulation in a mobility-independent graphene-loaded Bragg resonator

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A new grounded lamination gate (GLG) for diminished fringe-capacitance effects in high-/spl kappa/ gate-dielectric MOSFETs

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Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics

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A Comparative Study of Nano-SiO2 and Nano-TiO2 Fillers on Proton Conductivity and Dielectric Response of a Silicotungstic Acid–H3PO4–Poly(vinyl alcohol) Polymer Electrolyte

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Probing the properties of atomic layer deposited ZrO2 films on p-Germanium substrates

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Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate

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Reduction of interfacial SiO2 at HfO2/Si interface with Ta2O5 cap

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Journal of Applied Physics 114 (1) 014106 (2013)
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Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

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Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

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Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiOx/W cross-point structure

Subhranu Samanta, Xiao Gong, Panpan Zhang, Kaizhen Han and Xuanyao Fong
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Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses

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Applied Physics Letters 103 (18) 183502 (2013)
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Investigation of the gate oxide leakage current of low temperature formed hafnium oxide films

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Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics

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Applied Physics Letters 98 (25) 252903 (2011)
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Atomic and electronic structure of amorphous and crystalline hafnium oxide: X-ray photoelectron spectroscopy and density functional calculations

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Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices

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Hot electron transport in Au–HfO2–SiO2–Si structures studied by ballistic electron emission spectroscopy

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Effect of ionic substitutions on the structure and dielectric properties of hafnia: A first principles study

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Reduced electron back-injection in Al2O3/AlOx/Al2O3/graphene charge-trap memory devices

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Control of interfacial silicate between HfO2 and Si by high concentration ozone

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Applied Physics Letters 88 (7) 072903 (2006)
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Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide

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Applied Physics Letters 100 (1) 014102 (2012)
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Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on InP substrates

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Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators

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Electron-phonon interaction effects on the direct gap transitions of nanoscale Si films

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Applied Physics Letters 99 (15) 151903 (2011)
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Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

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Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

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Single shot measurement of the lifetime of a trapped electron in the gate dielectric of a high-k field effect transistor

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Defect states in the high-dielectric-constant gate oxide HfSiO4

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Electrostatic Self-Assembly: Understanding the Significance of the Solvent

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Electrical and Structural Properties of the Partial Ternary Thin-Film System Ni–Si–B

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Decoupling the Effects of Mass Density and Hydrogen-, Oxygen-, and Aluminum-Based Defects on Optoelectronic Properties of Realistic Amorphous Alumina

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Aqueous Combustion Synthesis of Aluminum Oxide Thin Films and Application as Gate Dielectric in GZTO Solution-Based TFTs

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Fabrication of Sn@Al2O3 Core-shell Nanoparticles for Stable Nonvolatile Memory Applications

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Silicon Surface Passivation by Atomic Layer Deposited Hafnium Oxide Films: Trap States Investigation Using Constant Voltage Stress Studies

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Growth and Characterization of Ternary HfxTayOz Films via Nitrogen-Infused Wet Oxidation

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ACS Omega 5 (41) 26347 (2020)
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Photocatalytic Hydrogen Generation and CO2 Conversion Using g-C3N4 Decorated Dendritic Fibrous Nanosilica: Role of Interfaces between Silica and g-C3N4

Sushma A. Rawool, Anupam Samanta, T. G. Ajithkumar, Yusuf Kar and Vivek Polshettiwar
ACS Applied Energy Materials 3 (9) 8150 (2020)
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An atomistic view on the Schottky barrier lowering applied to SrTiO3/Pt contacts

C. Funck and S. Menzel
AIP Advances 9 (4) 045116 (2019)
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High Discharge Energy Density and Efficiency in Newly Designed PVDF@SiO2–PVDF Composites for Energy Capacitors

Seung-Hyun Kim, Hong Suk Kang, Eun-Ho Sohn, Bong-Jun Chang, In Jun Park and Sang Goo Lee
ACS Applied Energy Materials 3 (9) 8937 (2020)
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Direct Observation of a Plasmon-Induced Hot Electron Flow in a Multimetallic Nanostructure

Lars van Turnhout, Yocefu Hattori, Jie Meng, Kaibo Zheng and Jacinto Sá
Nano Letters 20 (11) 8220 (2020)
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Evaluation of Volatility and Thermal Stability in Monomeric and Dimeric Lanthanide(III) Complexes Containing Enaminolate Ligands

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Advanced Nanomaterials for Solar Cells and Light Emitting Diodes

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Ultrathin ZrO2 on LiNi0.5Mn0.3Co0.2O2 electrode surface via atomic layer deposition for high-voltage operation in lithium-ion batteries

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Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

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Wide band gap of Strontium doped Hafnium oxide nanoparticles for opto-electronic device applications – Synthesis and characterization

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Cu2+ substituted Cr2O3 nanostructures prepared by microwave-assisted method: an investigation of its structural, morphological, optical, and dielectric properties

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IEEE Transactions on Applied Superconductivity 29 (5) 1 (2019)
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Origin of Abnormal Dielectric Behavior and Chemical States in Amorphous CaCu3Ti4O12 Thin Films on a Flexible Polymer Substrate

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Composite Polymer Electrolytes with Li7La3Zr2O12 Garnet-Type Nanowires as Ceramic Fillers: Mechanism of Conductivity Enhancement and Role of Doping and Morphology

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Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics

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Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices

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Mechanistic Insight into the Nature of Dopants in Graphene Derivatives Influencing Electromagnetic Interference Shielding Properties in Hybrid Polymer Nanocomposites

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Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

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Enhancement of Dielectric Properties of Nanoscale HfO2 Thin Films Via Atomic Layer Bombardment

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Surface Modification on Solution Processable ZrO2 High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors

Wenqiang He, Wenchao Xu, Qiang Peng, Chuan Liu, Guofu Zhou, Sujuan Wu, Min Zeng, Zhang Zhang, Jinwei Gao, Xingsen Gao, Xubing Lu and J.-M. Liu
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Benedikt Weiler, Alessio Gagliardi and Paolo Lugli
The Journal of Physical Chemistry C 120 (18) 10062 (2016)
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A Frequency-Multiplexed Coherent Electro-optic Memory in Rare Earth Doped Nanoparticles

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Nano Letters 20 (10) 7087 (2020)
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Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates

Seung Hyun Kim, So Yeong Joo, Hyun Soo Jin, Woo-Byoung Kim and Tae Joo Park
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Edge-plasmon assisted electro-optical modulator

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Physical Review B 100 (19) (2019)
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Analytical Modeling of ZrO2, HfO2 and SiO2 Effect over Tunneling Field Effect Transistor

Mohammad Kamali Moghaddam, Mohammad Moslemi and Mojtaba Farzaneh
Journal of Electronic Materials 49 (2) 1467 (2020)
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Vipin Nair, A.D. Parekh and P.R. Tailor
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Emerging neuromorphic devices

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Controlled-crystallinity of SiO2/TiO2 hollow nanoparticles and their electroresponsive behaviors

Bomi Kim, Sohee Park and Seungae Lee
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Light Emission in Nd Doped Si-Rich HfO2 Films Prepared by Magnetron Sputtering

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Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications

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Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

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Trap Reduction through O 3 Post‐Deposition Treatment of Y 2 O 3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates

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Chemical Bonding States of Plasma Nitrided High-k/Ge Gate Stack

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TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

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Co-Fabrication of Microcoaxial Interconnects and Substrate Junctions for Multichip Microelectronic Systems

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Alternate lanthanum oxide/silicon oxynitride-based gate stack performance enhancement due to ultrathin oxynitride interfacial layer for CMOS applications

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Plasma-Catalytic Dry Reforming of CH4 over Calcium Oxide: Catalyst Structural and Textural Modifications

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Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAM

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Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

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Non-Volatile Photonic Memory Based on a SAHAS Configuration

Irene Olivares, Jorge Parra and Pablo Sanchis
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Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application

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First Principles Calculations of Carbon-Nanotube and Boron-Nanotube Based Single Electron Transistors

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Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC

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120 MeV Ag ion irradiation induced intermixing, grain fragmentation in HfO2/GaOx thin films and consequent effects on the electrical properties of HfO2/GaOx/Si-based MOS capacitors

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Bhubon Chandra Mech and Jitendra Kumar
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A high performance HfSiON/TaN NMOSFET fabricated using a gate-last process

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Characterization of HfSiAlON/MoAlN PMOSFETs Fabricated by Using a Novel Gate-Last Process

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Lanthanide N,N-Dimethylaminodiboranates: Highly Volatile Precursors for the Deposition of Lanthanide-Containing Thin Films

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Analog and RF Performance Evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET

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DFT Analysis of Vanadium Tris(Dithiolene)-Based Double-Gated Single-Electron Transistor

Anu, Anurag Srivastava and Mohd. Shahid Khan
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