The European Physical Journal Applied Physics (EPJ AP)

Effect of the Annealing Temperature of the Seed Layer on the Following Main Layer in Atomic‐Layer‐Deposited SrTiO 3 Thin Films

Sang Hyeon Kim, Woongkyu Lee, Cheol Hyun An, et al.
physica status solidi (RRL) – Rapid Research Letters 13 (5) 1800557 (2019)
DOI: 10.1002/pssr.201800557
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Time dependence of ethylene decomposition and byproducts formation in a continuous flow dielectric-packed plasma reactor

M. Sanjeeva Gandhi, Antony Ananth, Young Sun Mok, Jun-Ik Song and Kyu-Hyun Park
Chemosphere 91 (5) 685 (2013)
DOI: 10.1016/j.chemosphere.2013.01.060
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Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics

J. L. Everaert, E. Rosseel, J. Dekoster, et al.
Applied Physics Letters 96 (12) 122906 (2010)
DOI: 10.1063/1.3373920
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Investigating doping effects on high-κ metal gate stack for effective work function engineering

C. Leroux, S. Baudot, M. Charbonnier, et al.
Solid-State Electronics 88 21 (2013)
DOI: 10.1016/j.sse.2013.04.011
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Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications

Nelson Y. Garces, David J. Meyer, Virginia D. Wheeler, et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32 (3) 03D101 (2014)
DOI: 10.1116/1.4818254
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Evolutionary search for new high-kdielectric materials: methodology and applications to hafnia-based oxides

Qingfeng Zeng, Artem R. Oganov, Andriy O. Lyakhov, et al.
Acta Crystallographica Section C Structural Chemistry 70 (2) 76 (2014)
DOI: 10.1107/S2053229613027861
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Gallium Nitride Power Devices

Tianli Duan and Liu Zhihong
Gallium Nitride Power Devices 145 (2017)
DOI: 10.1201/9781315196626-7
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Mechanism of photocatalytic activities in Cr-doped SrTiO3 under visible-light irradiation: an insight from hybrid density-functional calculations

Pakpoom Reunchan, Naoto Umezawa, Shuxin Ouyang and Jinhua Ye
Physical Chemistry Chemical Physics 14 (6) 1876 (2012)
DOI: 10.1039/c2cp23348g
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Electronic structure of an oxygen vacancy in Al2O3 from the results of Ab Initio quantum-chemical calculations and photoluminescence experiments

V. A. Pustovarov, V. Sh. Aliev, T. V. Perevalov, V. A. Gritsenko and A. P. Eliseev
Journal of Experimental and Theoretical Physics 111 (6) 989 (2010)
DOI: 10.1134/S1063776110120113
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Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

S. Gieraltowska, L. Wachnicki, B.S. Witkowski, M. Godlewski and E. Guziewicz
Thin Solid Films 520 (14) 4694 (2012)
DOI: 10.1016/j.tsf.2011.10.151
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Interlevel transitions in core–shell nanodots with dielectric environment

E.C. Niculescu
Superlattices and Microstructures 51 (6) 814 (2012)
DOI: 10.1016/j.spmi.2012.03.025
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Defects and their passivation in high K gate oxides

K. Tse and J. Robertson
Microelectronic Engineering 84 (4) 663 (2007)
DOI: 10.1016/j.mee.2006.12.009
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Fabrication of Releasable Single-Crystal Silicon-Metal Oxide Field-Effect Devices and Their Deterministic Assembly on Foreign Substrates

Hyun-Joong Chung, Tae-il Kim, Hoon-Sik Kim, et al.
Advanced Functional Materials 21 (16) 3029 (2011)
DOI: 10.1002/adfm.201100124
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Interfaces in {100} epitaxial heterostructures of perovskite oxides

J.-L. Maurice, D. Imhoff, J.-P. Contour and C. Colliex
Philosophical Magazine 86 (15) 2127 (2006)
DOI: 10.1080/14786430600640460
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Structural and dielectric properties of oxynitride perovskite LaTiOxNy thin films

A. Ziani, C. Le Paven-Thivet, L. Le Gendre, et al.
Thin Solid Films 517 (2) 544 (2008)
DOI: 10.1016/j.tsf.2008.06.061
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Role of defect relaxation for trap-assisted tunneling in high-κthin films: A first-principles kinetic Monte Carlo study

Gunther Jegert, Dan Popescu, Paolo Lugli, et al.
Physical Review B 85 (4) 045303 (2012)
DOI: 10.1103/PhysRevB.85.045303
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Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces

Hyeon-Kyun Noh, Young Jun Oh and K.J. Chang
Physica B: Condensed Matter 407 (15) 2907 (2012)
DOI: 10.1016/j.physb.2011.08.079
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Induced-charge electroosmotic flow around dielectric particles in uniform electric field

Fang Zhang and Dongqing Li
Journal of Colloid and Interface Science 410 102 (2013)
DOI: 10.1016/j.jcis.2013.08.017
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Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

J. Charles Pravin, D. Nirmal, P. Prajoon and J. Ajayan
Physica E: Low-dimensional Systems and Nanostructures 83 95 (2016)
DOI: 10.1016/j.physe.2016.04.017
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Analysis of gate engineered asymmetric junctionless double gate MOSFET for varying operating conditions

Namrata Mendiratta, Suman Lata Tripathi and Bhanu Prakash Kolla
IOP Conference Series: Materials Science and Engineering 872 012012 (2020)
DOI: 10.1088/1757-899X/872/1/012012
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Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies

Baikadi Pranay Kumar Reddy, Karri Babu Ravi Teja and Kavindra Kandpal
Semiconductors 52 (4) 420 (2018)
DOI: 10.1134/S1063782618040073
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Hafnium-Oxide 3-D Nanofilms via the Anodizing of Al/Hf Metal Layers

Alexander Mozalev, Maria Bendova, Francesc Gispert-Guirado and Eduard Llobet
Chemistry of Materials 30 (8) 2694 (2018)
DOI: 10.1021/acs.chemmater.8b00188
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Flexible IGZO Schottky diodes on paper

Jakub Kaczmarski, Michał A Borysiewicz, Krzysztof Piskorski, et al.
Semiconductor Science and Technology 33 (1) 015010 (2018)
DOI: 10.1088/1361-6641/aa9acb
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High-throughput identification of higher- κ dielectrics from an amorphous N 2 -doped HfO 2 –TiO 2 library

K.-S. Chang, W.-C. Lu, C.-Y. Wu and H.-C. Feng
Journal of Alloys and Compounds 615 386 (2014)
DOI: 10.1016/j.jallcom.2014.06.115
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Applications of Oxide Coatings in Photovoltaic Devices

Sonya Calnan
Coatings 4 (1) 162 (2014)
DOI: 10.3390/coatings4010162
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Nucleation and crystal growth in HfO2 thin films by UV nanosecond pulsed laser annealing

Toshiyuki Tabata
Applied Physics Express 13 (1) 015509 (2020)
DOI: 10.7567/1882-0786/ab5ce2
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Epitaxial integration of tetragonal BiFeO3 with silicon for nonvolatile memory applications

Jingbin Zhu, Zhigang Yin, Zhen Fu, et al.
Journal of Crystal Growth 459 178 (2017)
DOI: 10.1016/j.jcrysgro.2016.11.081
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Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors

Yuji Kiyota, Kenji Itaka, Yuta Iwashita, et al.
Japanese Journal of Applied Physics 50 (6) 06GH12 (2011)
DOI: 10.1143/JJAP.50.06GH12
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High-quality ZrO2/Si(001) thin films by a sol-gel process: Preparation and characterization

H. Döscher, G. Lilienkamp, P. Iskra, et al.
Journal of Applied Physics 107 (9) 094103 (2010)
DOI: 10.1063/1.3340830
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Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

O. Engström, B. Raeissi, S. Hall, et al.
Solid-State Electronics 51 (4) 622 (2007)
DOI: 10.1016/j.sse.2007.02.021
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Differences Between Charge Trapping States in Irradiated Nano-Crystalline HfO<formula formulatype="inline"><tex>$_{2}$</tex></formula> and Non-Crystalline Hf Silicates

G. Lucovsky, D. M. Fleetwood, S. Lee, et al.
IEEE Transactions on Nuclear Science 53 (6) 3644 (2006)
DOI: 10.1109/TNS.2006.886211
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Ultra-thin and Flat Mica as Gate Dielectric Layers

Chong Guan Low and Qing Zhang
Small 8 (14) 2178 (2012)
DOI: 10.1002/smll.201200300
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Hydrogen Barrier Layer Against Silicon Oxidation during Atomic Layer Deposition of Al[sub 2]O[sub 3] and HfO[sub 2]

Martin M. Frank, Yu Wang, Ming-Tsung Ho, et al.
Journal of The Electrochemical Society 154 (2) G44 (2007)
DOI: 10.1149/1.2405839
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Annealing effect on the formation of high-k dielectric in the W/ultrathin HfO2/Si-substrate system

V. I. Rudakov, E. A. Bogoyavlenskaya and Yu. I. Denisenko
Technical Physics Letters 38 (11) 982 (2012)
DOI: 10.1134/S1063785012110120
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Comparison of oxidized/nitrided Zr thin films on Si and SiC substrates

Yew Hoong Wong and Kuan Yew Cheong
Ceramics International 39 S475 (2013)
DOI: 10.1016/j.ceramint.2012.10.117
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Electronic band structure of zirconia and hafnia polymorphs from theGWperspective

Hong Jiang, Ricardo I. Gomez-Abal, Patrick Rinke and Matthias Scheffler
Physical Review B 81 (8) 085119 (2010)
DOI: 10.1103/PhysRevB.81.085119
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Growth temperature dependence of epitaxial Gd2O3 films on Si(111)

G. Niu, B. Vilquin, N. Baboux, et al.
Microelectronic Engineering 86 (7-9) 1700 (2009)
DOI: 10.1016/j.mee.2009.03.107
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Nonvolatile Memory With Nitrogen-Stabilized Cubic-Phase $\hbox{ZrO}_{2}$ as Charge-Trapping Layer

Yung-Hsien Wu, Lun-Lun Chen, Jia-Rong Wu, et al.
IEEE Electron Device Letters 31 (9) 1008 (2010)
DOI: 10.1109/LED.2010.2055530
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Layer structure variations of ultra-thin HfO2 films induced by post-deposition annealing

Wei-En Fu and Yong-Qing Chang
Applied Surface Science 257 (17) 7436 (2011)
DOI: 10.1016/j.apsusc.2011.02.132
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LanthanideN,N-Dimethylaminodiboranates as a New Class of Highly Volatile Chemical Vapor Deposition Precursors

Scott R. Daly, Do Young Kim and Gregory S. Girolami
Inorganic Chemistry 51 (13) 7050 (2012)
DOI: 10.1021/ic201852j
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Phase transformations in oxides induced by swift heavy ions

A. Benyagoub
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 245 (1) 225 (2006)
DOI: 10.1016/j.nimb.2005.11.106
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Investigations on electrical characteristics and reliability properties of MOS capacitors using HfAlOx on n-GaAs substrates

P.S. Das and Abhijit Biswas
Microelectronics Reliability 52 (1) 112 (2012)
DOI: 10.1016/j.microrel.2011.08.005
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Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix

S R C Pinto, M Buljan, L Marques, et al.
Nanotechnology 23 (40) 405605 (2012)
DOI: 10.1088/0957-4484/23/40/405605
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Measurement of Dipoles/Roll-Off /Work Functions by Coupling CV and IPE and Study of Their Dependence on Fabrication Process

Matthieu Charbonnier, Charles Leroux, V. Cosnier, et al.
IEEE Transactions on Electron Devices 57 (8) 1809 (2010)
DOI: 10.1109/TED.2010.2050957
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Cytotoxicity and physicochemical properties of hafnium oxide nanoparticles

James A. Field, Antonia Luna-Velasco, Scott A. Boitano, et al.
Chemosphere 84 (10) 1401 (2011)
DOI: 10.1016/j.chemosphere.2011.04.067
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Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

D. Zade, S. Sato, K. Kakushima, et al.
Microelectronics Reliability 51 (4) 746 (2011)
DOI: 10.1016/j.microrel.2010.11.004
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Improved interface properties of GaN metal-oxide-semiconductor device with non-polar plane and AlN passivation layer

Xian Wu, Renrong Liang, Lei Guo, et al.
Applied Physics Letters 109 (23) 232101 (2016)
DOI: 10.1063/1.4971352
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Effects of anodisation parameters on thin film properties: a review

Y. H. Wong, M. G. Affendy, S. K. Lau, et al.
Materials Science and Technology 33 (6) 699 (2017)
DOI: 10.1080/02670836.2016.1193654
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Study of the optoelectronic and piezoelectric properties of ZrO2 doped PVDF from quantum chemistry calculations

Albert Veved, Geh Wilson Ejuh and Noël Djongyang
Chinese Journal of Physics 63 213 (2020)
DOI: 10.1016/j.cjph.2019.10.022
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Thickness-dependent phase evolution and dielectric property of Hf0.5Zr0.5O2 thin films prepared with aqueous precursor

Yong Yan, Dayu Zhou, Chunxia Guo, et al.
Journal of Sol-Gel Science and Technology 77 (2) 430 (2016)
DOI: 10.1007/s10971-015-3871-5
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Revealing the Surface Reactivity of Zirconia by Periodic DFT Calculations

Olga A. Syzgantseva, Monica Calatayud and Christian Minot
The Journal of Physical Chemistry C 116 (11) 6636 (2012)
DOI: 10.1021/jp209898q
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Defect calculations in semiconductors through a dielectric-dependent hybrid DFT functional: The case of oxygen vacancies in metal oxides

Matteo Gerosa, Carlo Enrico Bottani, Lucia Caramella, et al.
The Journal of Chemical Physics 143 (13) 134702 (2015)
DOI: 10.1063/1.4931805
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Lanthanide rare earth oxide thin film as an alternative gate oxide

Kian Heng Goh, A.S.M.A. Haseeb and Yew Hoong Wong
Materials Science in Semiconductor Processing 68 302 (2017)
DOI: 10.1016/j.mssp.2017.06.037
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Transport mechanisms of electrons and holes in dielectric films

K A Nasyrov and V A Gritsenko
Physics-Uspekhi 56 (10) 999 (2013)
DOI: 10.3367/UFNe.0183.201310h.1099
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Behavior of hydrogen in wide band gap oxides

K. Xiong, J. Robertson and S. J. Clark
Journal of Applied Physics 102 (8) 083710 (2007)
DOI: 10.1063/1.2798910
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Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y

Xianghan Xu, Fei-Ting Huang, Yubo Qi, et al.
Nature Materials (2021)
DOI: 10.1038/s41563-020-00897-x
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Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

Qi Xie, Davy Deduytsche, Marc Schaekers, et al.
Applied Physics Letters 97 (11) 112905 (2010)
DOI: 10.1063/1.3490710
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Two photon processes in ZnO quantum dots

Deepti Maikhuri, S.P. Purohit and K.C. Mathur
Superlattices and Microstructures 89 296 (2016)
DOI: 10.1016/j.spmi.2015.11.017
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Developments in High Temperature Corrosion and Protection of Materials

Z. Li and W. Gao
Developments in High Temperature Corrosion and Protection of Materials 521 (2008)
DOI: 10.1533/9781845694258.3.521
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Influence of oxygen vacancies on the dielectric properties of hafnia: First-principles calculations

Eric Cockayne
Physical Review B 75 (9) 094103 (2007)
DOI: 10.1103/PhysRevB.75.094103
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Hydrothermal Synthesis of Aqueous Sols of Nanocrystalline HfO2

G. S. Taran, A. E. Baranchikov, O. S. Ivanova and K. Yu. Zhizhin
Russian Journal of Inorganic Chemistry 65 (6) 800 (2020)
DOI: 10.1134/S0036023620060236
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Characterization of Ta-Ti Thin Films by using a Scanning Droplet Cell in Combination with AC Linear Sweep Voltammetry

Mu Fan, Kirill Sliozberg, Fabio La Mantia, et al.
ChemElectroChem 1 (5) 903 (2014)
DOI: 10.1002/celc.201300153
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Electrical Characteristics of Oxidized∕Nitrided Zr Thin Film on Si

Yew Hoong Wong and Kuan Yew Cheong
Journal of The Electrochemical Society 158 (12) H1270 (2011)
DOI: 10.1149/2.106112jes
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High-k dielectrics for future generation memory devices (Invited Paper)

J.A. Kittl, K. Opsomer, M. Popovici, et al.
Microelectronic Engineering 86 (7-9) 1789 (2009)
DOI: 10.1016/j.mee.2009.03.045
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Interfacial structure of epitaxial SrTiO3on Si: experiments and simulations

X F Wang, Juan Wang, Quan Li, et al.
Journal of Physics D: Applied Physics 42 (8) 085409 (2009)
DOI: 10.1088/0022-3727/42/8/085409
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Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

J. Yu, G. Chen, C.X. Li, et al.
Sensors and Actuators A: Physical 172 (1) 9 (2011)
DOI: 10.1016/j.sna.2011.02.021
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MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

S Abermann, G Pozzovivo, J Kuzmik, et al.
Semiconductor Science and Technology 22 (12) 1272 (2007)
DOI: 10.1088/0268-1242/22/12/005
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Improvement on low-temperature deposited HfO2 film and interfacial layer by high-pressure oxygen treatment

Po-Chun Yang, Ting-Chang Chang, Shih-Ching Chen, et al.
Solid-State Electronics 62 (1) 128 (2011)
DOI: 10.1016/j.sse.2011.03.012
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Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1−x high-κ dielectrics on Si

B. B. Triplett, P. T. Chen, Y. Nishi, et al.
Journal of Applied Physics 101 (1) 013703 (2007)
DOI: 10.1063/1.2402974
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Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

Yung-Shao Shen, Kuen-Yi Chen, Po-Chun Chen, Teng-Chuan Chen and Yung-Hsien Wu
Scientific Reports 7 (1) 43659 (2017)
DOI: 10.1038/srep43659
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Physics of Quantum Fluids

Jacques Levrat, Georg Rossbach, Raphaël Butté and Nicolas Grandjean
Springer Series in Solid-State Sciences, Physics of Quantum Fluids 177 201 (2013)
DOI: 10.1007/978-3-642-37569-9_10
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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

B. Raeissi, J. Piscator, O. Engström, et al.
Solid-State Electronics 52 (9) 1274 (2008)
DOI: 10.1016/j.sse.2008.04.005
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Elastic Modulus of HfO2 Thin Film Grown by Atomic Layer Deposition with Wrinkle-based Measurement

Hyun-Ju Choi and Yongseong Kim
Bulletin of the Korean Chemical Society 38 (10) 1246 (2017)
DOI: 10.1002/bkcs.11251
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Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics

Kalya Shubhakar, Kin Leong Pey, Nagarajan Raghavan, et al.
Microelectronic Engineering 109 364 (2013)
DOI: 10.1016/j.mee.2013.03.021
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Structural and band gaps studies of novel Al 2-x Hf x O 3 materials toward MOS applications

Norlida Kamarulzaman, Annie Maria Mahat, Nurhanna Badar and Cezhou Zhao
Materials Chemistry and Physics (2018)
DOI: 10.1016/j.matchemphys.2018.03.024
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Model Surfaces Produced by Atomic Layer Deposition

Rick B. Walsh, Shaun C. Howard, Andrew Nelson, et al.
Chemistry Letters 41 (10) 1247 (2012)
DOI: 10.1246/cl.2012.1247
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On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs

Muhammad Nawaz
Active and Passive Electronic Components 2015 1 (2015)
DOI: 10.1155/2015/651527
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Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression

Cheng-Yi Chang, Fu-Ming Pan, Jian-Siang Lin, et al.
Journal of Applied Physics 120 (23) 234501 (2016)
DOI: 10.1063/1.4972029
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How morphology determines the charge storage properties of Ge nanocrystals in HfO 2

A. Slav, C. Palade, A.M. Lepadatu, et al.
Scripta Materialia 113 135 (2016)
DOI: 10.1016/j.scriptamat.2015.10.028
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Outlook and Challenges of Nano Devices, Sensors, and MEMS

Ling-Xuan Qian
Outlook and Challenges of Nano Devices, Sensors, and MEMS 3 (2017)
DOI: 10.1007/978-3-319-50824-5_1
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Frequency dispersion and dielectric relaxation in postdeposition annealed high-κ erbium oxide metal–oxide–semiconductor capacitors

Robin Khosla and Satinder K. Sharma
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 (1) 012201 (2018)
DOI: 10.1116/1.4995809
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Surface morphology of epitaxial lattice-matched Ba0.7Sr0.3O on Si(001) and vicinal Si(001)-4°[110] substrates

J. Zachariae and H. Pfnür
Surface Science 600 (13) 2785 (2006)
DOI: 10.1016/j.susc.2006.05.002
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High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

Daniel J. Lichtenwalner, Lin Cheng, Sarit Dhar, Anant Agarwal and John W. Palmour
Applied Physics Letters 105 (18) 182107 (2014)
DOI: 10.1063/1.4901259
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Technological Innovation for Value Creation

Qian Chen, Henrique L. Gomes, Asal Kiazadeh, et al.
IFIP Advances in Information and Communication Technology, Technological Innovation for Value Creation 372 527 (2012)
DOI: 10.1007/978-3-642-28255-3_58
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Study on the dielectric properties of Al 2 O 3 /TiO 2 sub-nanometric laminates: effect of the bottom electrode and the total thickness

M Ben Elbahri, A Kahouli, B Mercey, et al.
Journal of Physics D: Applied Physics 51 (6) 065101 (2018)
DOI: 10.1088/1361-6463/aaa4df
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Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM

Shih-Kai Lin, Cheng-Hsien Wu, Min-Chen Chen, et al.
Journal of Physics D: Applied Physics 53 (39) 395101 (2020)
DOI: 10.1088/1361-6463/ab92c5
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Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric

Zhi-Peng Ling, Jun-Tao Zhu, Xinke Liu and Kah-Wee Ang
Scientific Reports 6 (1) 26609 (2016)
DOI: 10.1038/srep26609
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The Structure and Characterization of ZrO2Thin Films Prepared by Liquid Delivery-MOCVD

Rui Li, Dan Xie, Mingming Zhang, et al.
Ferroelectrics 407 (1) 140 (2010)
DOI: 10.1080/00150193.2010.484760
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Influence of annealing temperatures on solution-processed AlInZnO thin film transistors

Yana Gao, Jianguo Lu, Jianhua Zhang and Xifeng Li
Journal of Alloys and Compounds 646 675 (2015)
DOI: 10.1016/j.jallcom.2015.06.049
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Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

Riikka L. Puurunen
Journal of Applied Physics 97 (12) 121301 (2005)
DOI: 10.1063/1.1940727
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Valence band offset of ReS2/BN heterojunction measured by X-ray photoelectron spectroscopy

Heyuan Huang, Wenge Yang, Shu'an Xing, et al.
Physics Letters A 392 127142 (2021)
DOI: 10.1016/j.physleta.2021.127142
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High performance organic nonvolatile memory transistors based on HfO2 and poly(α-methylstyrene) electret hybrid charge-trapping layers

W. C. Xu, H. X. He, X. S. Jing, et al.
Applied Physics Letters 111 (6) 063302 (2017)
DOI: 10.1063/1.4997748
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Comparison of resistive switching characteristics by using e-gun/sputter deposited SiOx film in W/SiOx/TiN structure and pH/creatinine sensing through iridium electrode

Sourav Roy, Anisha Roy, Rajeswar Panja, et al.
Journal of Alloys and Compounds 726 30 (2017)
DOI: 10.1016/j.jallcom.2017.07.304
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Variable RF capacitor based on a-Si:H (P-doped) multi-length cantilevers

Y Q Fu, S B Milne, J K Luo, et al.
Journal of Physics: Conference Series 34 788 (2006)
DOI: 10.1088/1742-6596/34/1/130
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Localized breakdown in dielectrics and macroscopic charge transport through the whole gate stack: A comparative study

Yi Zheng, Andrew T. S. Wee, Yi Ching Ong, et al.
Applied Physics Letters 92 (1) 012914 (2008)
DOI: 10.1063/1.2830814
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Ethynyl-linked push–pull porphyrin hetero-dimers for near-IR dye-sensitized solar cells: photovoltaic performances versus excited-state dynamics

Yizhu Liu, Hong Lin, Jianbao Li, et al.
Physical Chemistry Chemical Physics 14 (48) 16703 (2012)
DOI: 10.1039/c2cp43165c
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High dielectric constant gate oxides for metal oxide Si transistors

John Robertson
Reports on Progress in Physics 69 (2) 327 (2006)
DOI: 10.1088/0034-4885/69/2/R02
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Thermal stability of HfTaON films prepared by physical vapor deposition

Xu Gaobo and Xu Qiuxia
Journal of Semiconductors 30 (2) 023002 (2009)
DOI: 10.1088/1674-4926/30/2/023002
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Measuring Dipole Inversion in Self-Assembled Nano-Dielectric Molecular Layers

Li Zeng, Riccardo Turrisi, Bo Fu, et al.
ACS Applied Materials & Interfaces 10 (7) 6484 (2018)
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The Journal of Physical Chemistry C 120 (43) 25023 (2016)
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Surface Modification on Solution Processable ZrO2 High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors

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The Journal of Physical Chemistry C 120 (18) 10062 (2016)
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Protons in Oxysulfides, Oxysulfates, and Sulfides: A First-Principles Study of La2O2S, La2O2SO4, SrZrS3, and BaZrS3

Jonathan M. Polfus, Truls Norby and Rune Bredesen
The Journal of Physical Chemistry C 119 (42) 23875 (2015)
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Electrical Properties of Ge pMOSFETs With Ultrathin EOT HfO₂/AlOₓ/GeOₓ Gate-Stacks and NiGe Metal Source/Drain

Rui Zhang, Junkang Li and Xiao Yu
IEEE Transactions on Electron Devices 1 (2017)
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Rigorous numerical modeling of scattering-type scanning near-field optical microscopy and spectroscopy

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Applied Physics Letters 111 (22) 223110 (2017)
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Cation diffusion in polycrystalline thin films of monoclinic HfO2 deposited by atomic layer deposition

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An approach to enhance memory retention capacity in MFIS structures using different insulating buffer layer

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Improving the performance of graphene nanoribbon field-effect transistors by using lanthanum aluminate as the gate dielectric

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Hydrolysis of ZrCl4and HfCl4: The Initial Steps in the High-Temperature Oxidation of Metal Chlorides to Produce ZrO2and HfO2

Zongtang Fang and David A. Dixon
The Journal of Physical Chemistry C 117 (15) 7459 (2013)
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Junctionless Tunnel Field Effect Transistor

Bahniman Ghosh and Mohammad Waseem Akram
IEEE Electron Device Letters 34 (5) 584 (2013)
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A Dual-Gate Graphene FET Model for Circuit Simulation—SPICE Implementation

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IEEE Transactions on Nanotechnology 12 (3) 427 (2013)
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Novel Photo-Defined Polymer-Enhanced Through-Silicon Vias for Silicon Interposers

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IEEE Transactions on Components, Packaging and Manufacturing Technology 3 (7) 1130 (2013)
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Effect of Space Radiation on the Leakage Current of MEMS Insulators

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IEEE Transactions on Nuclear Science 60 (4) 3074 (2013)
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Electromagnetic Performance of RF NEMS Graphene Capacitive Switches

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IEEE Transactions on Nanotechnology 13 (1) 70 (2014)
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Improved Performance of Amorphous InGaZnO Thin-Film Transistor With $\hbox{Ta}_{2}\hbox{O}_{5}$ Gate Dielectric by Using La Incorporation

L. X. Qian, X. Z. Liu, C. Y. Han and P. T. Lai
IEEE Transactions on Device and Materials Reliability 14 (4) 1056 (2014)
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Intersublevel Photoabsorption and Photoelectric Processes in ZnO Quantum Dot Embedded in $\hbox{HfO}_{2}$ and AlN Matrices

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A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

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Characterizing the Charge Trapping across Crystalline and Amorphous Si/SiO 2 /HfO 2 Stacks from First-Principle Calculations

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Study of molar ratio on the characteristics of metal–organic decomposed LaxCe1−xOz film as a metal reactive oxide on Si substrate

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Growth of an Al2O3 Layer and Sn@Al2O3 Core-Shell Nanoparticles by Using a Silicon Oxide/Aluminum Bilayer

Jong-Hwan Yoon
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Electron beam induced local crystallization of HfO2 nanopores for biosensing applications

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Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors

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Improved effective equation for the Rashba spin-orbit coupling in semiconductor nanowires

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Germanium Based Field-Effect Transistors: Challenges and Opportunities

Patrick Goley and Mantu Hudait
Materials 7 (3) 2301 (2014)
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Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high- k /metal gate nMOSFETs with gate-last process

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Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

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Improving the ALD-grown Y 2 O 3 /Ge interface quality by surface and annealing treatments

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Applied Surface Science 369 377 (2016)
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Structural and Electrical Properties of Ta ax La(1−a)x O y Thin Films

Zahra Khorshidi, Ali Bahari and Reza Gholipur
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Analysis of temperature and wave function penetration effects in nanoscale double-gate MOSFETs

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A novel particle separation method based on induced-charge electro-osmotic flow and polarizability of dielectric particles

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Comparative electron spin resonance study of epi-Lu2O3/(111)Si and a-Lu2O3/(100)Si interfaces: Misfit point defects

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The role of silicon alloying addition on the pitting corrosion resistance of an Al-12wt.%Si alloy

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Electrochimica Acta 140 258 (2014)
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Effects of substrate doping on Gd2O3(100)/Si(100) heterostructure

Wattaka Sitaputra and Raphael Tsu
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DOI: 10.1116/1.4793264
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UV-protection properties of electrospun polyacrylonitrile nanofibrous mats embedded with MgO and Al2O3 nanoparticles

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DOI: 10.1007/s11051-011-0499-4
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Ab initio simulation of the electronic structure of δ-Ta2O5 with oxygen vacancy and comparison with experiment

M. V. Ivanov, T. V. Perevalov, V. Sh. Aliev, V. A. Gritsenko and V. V. Kaichev
Journal of Experimental and Theoretical Physics 112 (6) 1035 (2011)
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P-type double gate junctionless tunnel field effect transistor

M. W. Akram, Bahniman Ghosh, Punyasloka Bal and Partha Mondal
Journal of Semiconductors 35 (1) 014002 (2014)
DOI: 10.1088/1674-4926/35/1/014002
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Thermal oxidation and nitridation of sputtered Zr thin film on Si via N2O gas

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Journal of Alloys and Compounds 509 (35) 8728 (2011)
DOI: 10.1016/j.jallcom.2011.06.041
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Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics

D. Nirmal, P. Vijayakumar, Divya Mary Thomas, Binola K. Jebalin and N. Mohankumar
Microelectronics Reliability 53 (3) 499 (2013)
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Application and electronic structure of high-permittivity dielectrics

T.V. Perevalov and V.A. Gritsenko
Uspekhi Fizicheskih Nauk 180 (6) 587 (2010)
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Ta2O5-based high-K dielectric thin films from solution processed at low temperatures

Raluca C. Frunză, Brigita Kmet, Marko Jankovec, Marko Topič and Barbara Malič
Materials Research Bulletin 50 323 (2014)
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Polaronic phase transitions and complex permittivity of solid polar insulators with gigantic dielectric response

Valeri Ligatchev
physica status solidi (b) 251 (3) 569 (2014)
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Amorphous hafnium silicates: structural, electronic and dielectric properties

Peter Broqvist and Alfredo Pasquarello
Microelectronic Engineering 84 (9-10) 2416 (2007)
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Monolayer FePt nanocrystal self-assembly embedded into atomic-layer-deposited Al2O3 films for nonvolatile memory applications

Xiao-Jie Liu, Mo-Yun Gao, Ai-Dong Li, et al.
Journal of Alloys and Compounds 588 103 (2014)
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Damascene technique applied to surface acoustic wave devices

Daniel Reitz, Juergen Thomas, Hagen Schmidt, et al.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 25 (1) 271 (2007)
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Casimir attractive-repulsive transition in MEMS

M. Boström, S.Å. Ellingsen, I. Brevik, et al.
The European Physical Journal B 85 (11) (2012)
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Sm2O3 gate dielectric on Si substrate

Wen Chiao Chin, Kuan Yew Cheong and Zainuriah Hassan
Materials Science in Semiconductor Processing 13 (5-6) 303 (2010)
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A study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator

Gang Chen, Jerry Yu and P.T. Lai
Microelectronics Reliability 52 (8) 1660 (2012)
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Noncontact metrology for inversion charge carrier mobility by corona charge and photovoltage measurements on blank wafers with a gate dielectric

J. L. Everaert, E. Rosseel, A. Pap, et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29 (1) 01AB05 (2011)
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Insulator–metal transition of VO2ultrathin films on silicon: evidence for an electronic origin by infrared spectroscopy

W W Peng, G Niu, R Tétot, et al.
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BaTiO3Integration with Nanostructured Epitaxial (100), (110), and (111) Germanium for Multifunctional Devices

Mantu K. Hudait, Yan Zhu, Nikhil Jain, et al.
ACS Applied Materials & Interfaces 5 (21) 11446 (2013)
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Defect passivation in HfO2 gate oxide by fluorine

K. Tse and J. Robertson
Applied Physics Letters 89 (14) 142914 (2006)
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Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors

Christophe Avis, Youn Goo Kim and Jin Jang
Journal of Materials Chemistry 22 (34) 17415 (2012)
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Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction

A. Proessdorf, M. Niehle, M. Hanke, et al.
Applied Physics Letters 105 (2) 021601 (2014)
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Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers

Chien-Wei Lee and Jenn-Gwo Hwu
AIP Advances 3 (10) 102123 (2013)
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ALD deposited ZrO2 ultrathin layers on Si and Ge substrates: A multiple technique characterization

M.A. Botzakaki, N. Xanthopoulos, E. Makarona, et al.
Microelectronic Engineering 112 208 (2013)
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Development of hafnium based high-k materials—A review

J.H. Choi, Y. Mao and J.P. Chang
Materials Science and Engineering: R: Reports 72 (6) 97 (2011)
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First-principles study of Zintl aluminide SrAl2

Alexander Slepko and Alexander A. Demkov
Physical Review B 85 (19) (2012)
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Electro-optical modulation of a silicon waveguide with an “epsilon-near-zero” material

Alok P. Vasudev, Ju-Hyung Kang, Junghyun Park, Xiaoge Liu and Mark L. Brongersma
Optics Express 21 (22) 26387 (2013)
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Defect states in the high-dielectric-constant gate oxide LaAlO3

K. Xiong, J. Robertson and S. J. Clark
Applied Physics Letters 89 (2) 022907 (2006)
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Review on one-dimensional nanostructures prepared by electrospinning and atomic layer deposition

Imre Miklós Szilágyi and Dávidné Nagy
Journal of Physics: Conference Series 559 012010 (2014)
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Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction

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Physical Review B 92 (16) (2015)
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Thin Films of High-kOxides and ZnO for Transparent Electronic Devices

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Chemical Vapor Deposition 19 (4-6) 213 (2013)
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Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application

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Electronic properties of the Zr–ZrO2–SiO2–Si(100) gate stack structure

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La2O3 Nano powders by mixture of fuels approach through chemical combustion for dielectric studies

G Nithesh Sharma, K Venkateswara Rao, V Sesha Sai Kumar, et al.
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Electrical and reliability characteristics of polycrystalline silicon thin-film transistors with high-κ Eu2O3 gate dielectrics

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Applied Physics Letters 100 (17) 173509 (2012)
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Nanoscale investigations: Surface potential of rare-earth oxide (Re2O3) thin films by kelvin probe force microscopy for next generation CMOS technology

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Surfaces and Interfaces 4 69 (2016)
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Ink-Jet-Printed Organic Thin-Film Transistors for Low-Voltage-Driven CMOS Circuits With Solution-Processed AlO_X Gate Insulator

Sung Hoon Kim, Sun Hee Lee, Youn Goo Kim and Jin Jang
IEEE Electron Device Letters 34 (2) 307 (2013)
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Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers

V. V. Afanas’ev, A. Stesmans, G. Mavrou and A. Dimoulas
Applied Physics Letters 93 (10) 102115 (2008)
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Phase transition in sputtered HfO2 thin films: A qualitative Raman study

G.S. Belo, F. Nakagomi, A. Minko, et al.
Applied Surface Science 261 727 (2012)
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High dielectric material dependence of carbon nanotube field effect transistor considering non‐ballistic conduction

Nirjhor Tahmidur Rouf, Ashfaqul Haq Deep, Rusafa Binte Hassan, et al.
Micro & Nano Letters 9 (10) 620 (2014)
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First-principles calculations of electronic and optical properties of Mn-doped cubic HfO2

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Journal of Alloys and Compounds 609 107 (2014)
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The initial atomic layer deposition of HfO2∕Si(001) as followed in situ by synchrotron radiation photoelectron spectroscopy

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From amorphous phase separations to nanostructured materials in sol–gel derived ZrO2:Eu3+/SiO2 and ZnO/SiO2 composites

A. Gaudon, F. Lallet, A. Boulle, et al.
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Electron spin resonance observation of an interfacial GePb1-type defect in SiO2/(100)Si1−xGex/SiO2/Si heterostructures

A Stesmans, P Somers and V V Afanas’ev
Journal of Physics: Condensed Matter 21 (12) 122201 (2009)
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Electronic structure of bulk and defect α- and γ-Al2O3

T.V. Perevalov, A.V. Shaposhnikov and V.A. Gritsenko
Microelectronic Engineering 86 (7-9) 1915 (2009)
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Band alignment of atomic layer deposited (ZrO2)x(SiO2)1−x gate dielectrics on Si (100)

Dahlang Tahir, Eun Kyoung Lee, Suhk Kun Oh, et al.
Applied Physics Letters 94 (21) 212902 (2009)
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Characterization of Semiconductor Heterostructures and Nanostructures

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Characterization of Semiconductor Heterostructures and Nanostructures 435 (2008)
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Q. Cao, M.-G. Xia, M. Shim and J. A. Rogers
Advanced Functional Materials 16 (18) 2355 (2006)
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Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures

Srikant Jayanti, Xiangyu Yang, Daniel J. Lichtenwalner and Veena Misra
Applied Physics Letters 96 (9) 092905 (2010)
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Morphology and Composition of Selected High-k Materials and Their Relevance to Dielectric Properties of Thin Films

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DIELECTRIC AND INTERFACE STABILITY OF LaSmO3 FILMS

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Thermal stability of thin ZrO2 films prepared by a sol-gel process on Si(001) substrates

H. Döscher, G. Lilienkamp, P. Iskra, M. Kazempoor and W. Daum
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AmorphousHfO2andHf1−xSixOvia a melt-and-quench scheme usingab initiomolecular dynamics

Wanderlã L. Scopel, Antônio J. R. da Silva and A. Fazzio
Physical Review B 77 (17) 172101 (2008)
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Remote phonon scattering in field-effect transistors with a high κ insulating layer

B. Laikhtman and P. M. Solomon
Journal of Applied Physics 103 (1) 014501 (2008)
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Floating Gate Memory with Biomineralized Nanodots Embedded in High-kGate Dielectric

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Applied Physics Express 2 (9) 095001 (2009)
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In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates

K. Devloo-Casier, J. Dendooven, K. F. Ludwig, et al.
Applied Physics Letters 98 (23) 231905 (2011)
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Investigation of forming-gas annealed CeO2 thin film on GaN

Hock Jin Quah, Kuan Yew Cheong, Zainuriah Hassan and Zainovia Lockman
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Chengliang Wang, Lang Jiang and Wenping Hu
Organic Optoelectronics 95 (2013)
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Thickness dependence of the structural and dielectric properties of epitaxial ZrO2films grown by limited reaction sputtering

Y Zhou, K Sasaki, T Kawae and A Morimoto
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Hafnia-Silica Cryogels: Solvent-Assisted Textural and Catalytic Control in the Citronellal Cyclization

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ChemCatChem 6 (9) 2626 (2014)
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Low-Operating-Voltage Pentacene-Based Transistors and Inverters With Solution-Processed Barium Zirconate Titanate Insulators

Chia-Yu Wei, Wen-Chieh Huang, Chih-Kai Yang, Yen-Yu Chang and Yeong-Her Wang
IEEE Electron Device Letters 32 (12) 1755 (2011)
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A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs

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High-mobility BaSnO3thin-film transistor with HfO2gate insulator

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Organic Macromolecular High Dielectric Constant Materials: Synthesis, Characterization, and Applications

Meng Guo, Teruaki Hayakawa, Masa-aki Kakimoto and Theodore Goodson
The Journal of Physical Chemistry B 115 (46) 13419 (2011)
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Electrochemical and passive characterization of a beta type Ti45Zr38Al17 cast rod in nitric acid medium

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Electrochimica Acta 85 210 (2012)
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Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness

Minhyeok Choe, Gunho Jo, Jongsun Maeng, et al.
Journal of Applied Physics 107 (3) 034504 (2010)
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Investigations on high-κ dielectrics for low threshold voltage and low leakage zinc oxide thin-film transistor, using material selection methodologies

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Journal of Materials Science: Materials in Electronics 27 (6) 5972 (2016)
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Preparation and properties of BaTiO3/porous oxide composites

V. V. Sydorchuk, S. V. Khalameida, V. P. Klimenko, V. A. Mikheev and V. A. Zazhigalov
Inorganic Materials 48 (9) 925 (2012)
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Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications

Yogesh Goswami, Pranav Asthana and Bahniman Ghosh
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Field-effect induced tunability in hyperbolic metamaterials

Georgia T. Papadakis and Harry A. Atwater
Physical Review B 92 (18) (2015)
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Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

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Advanced Materials 26 (48) 8198 (2014)
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Method for disclosing invisible physical properties in metal−ferroelectric−insulator−semiconductor gate stacks

Shigeki Sakai, Wei Zhang and Mitsue Takahashi
Journal of Physics D: Applied Physics 50 (16) 165107 (2017)
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Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

Wei-En Fu, Chia-Wei Chang, Yong-Qing Chang, Chih-Kai Yao and Jiunn-Der Liao
Applied Surface Science 258 (22) 8974 (2012)
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Trap-assisted tunneling, capacitance–voltage characteristics, and surface properties of Sm2O3 thin film on Si substrate

Kian Heng Goh, A. S. M. A. Haseeb and Yew Hoong Wong
Journal of Materials Science: Materials in Electronics 28 (6) 4725 (2017)
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Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack

Mengmeng YANG, Hailing TU, Jun DU, et al.
Journal of Rare Earths 31 (4) 395 (2013)
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Atomic structure and thermally induced transformation of the crystalline BaO/Si(100) junction

M. Kuzmin, P. Laukkanen, M. P. J. Punkkinen, et al.
Physical Review B 90 (23) (2014)
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Energy band alignment at the nanoscale

Jonas Deuermeier, Elvira Fortunato, Rodrigo Martins and Andreas Klein
Applied Physics Letters 110 (5) 051603 (2017)
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Model approach to solving the inverse problem of X-ray reflectometry and its application to the study of the internal structure of hafnium oxide films

Yu. O. Volkov, I. V. Kozhevnikov, B. S. Roshchin, E. O. Filatova and V. E. Asadchikov
Crystallography Reports 58 (1) 160 (2013)
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A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices

Niladri Pratap Maity, Reshmi Maity, R.K. Thapa and Srimanta Baishya
Superlattices and Microstructures 95 24 (2016)
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Structural and optical characterization of Cr2O3 nanostructures: Evaluation of its dielectric properties

M. M. Abdullah, Fahd M. Rajab and Saleh M. Al-Abbas
AIP Advances 4 (2) 027121 (2014)
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Floating Gate Memory With Biomineralized Nanodots Embedded in $\hbox{HfO}_{2}$

Kosuke Ohara, Yosuke Tojo, Ichiro Yamashita, et al.
IEEE Transactions on Nanotechnology 10 (3) 576 (2011)
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Enhanced Capacitance of Composite Anodic ZrO2Films Comprising High Permittivity Oxide Nanocrystals and Highly Resistive Amorphous Oxide Matrix

Hiroki Habazaki, Shun Koyama, Yoshitaka Aoki, Norihito Sakaguchi and Shinji Nagata
ACS Applied Materials & Interfaces 3 (7) 2665 (2011)
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Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon

Yi Zhao, Masahiro Toyama, Koji Kita, Kentaro Kyuno and Akira Toriumi
Applied Physics Letters 88 (7) 072904 (2006)
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Platinum-assisted post deposition annealing of the n-Ge/Y2O3interface

C Zimmermann, O Bethge, B Lutzer and E Bertagnolli
Semiconductor Science and Technology 31 (7) 075009 (2016)
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HfO[sub 2]∕Si interface formation in atomic layer deposition films: An in situ investigation

Massimo Tallarida, Konstantin Karavaev and Dieter Schmeisser
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27 (1) 300 (2009)
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Study of Si kinetics in interfacial SiO2scavenging in HfO2gate stacks

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura and Akira Toriumi
Applied Physics Express 8 (6) 061304 (2015)
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Quantum-confined nanowires as vehicles for enhanced electrical transport

S Noor Mohammad
Nanotechnology 23 (28) 285707 (2012)
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An integrated high temperature environmental cell for atom probe tomography studies of gas-surface reactions: Instrumentation and results

S. Dumpala, S.R. Broderick, P.A.J. Bagot and K. Rajan
Ultramicroscopy 141 16 (2014)
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Designing graphene absorption in a multispectral plasmon-enhanced infrared detector

Michael D. Goldflam, Zhe Fei, Isaac Ruiz, et al.
Optics Express 25 (11) 12400 (2017)
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High-k Gate Dielectrics for CMOS Technology

Shijie Wang, Yuanping Feng and Alfred C. H. Huan
High-k Gate Dielectrics for CMOS Technology 293 (2012)
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Physical and electrical characterization of atomic-layer-deposited Ru nanocrystals embedded into Al2O3 for memory applications

Min Zhang, Wei Chen, Shi-Jin Ding, et al.
Journal of Physics D: Applied Physics 41 (3) 032007 (2008)
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Internal Photoemission Spectroscopy

Valery V. Afanas’ev
Internal Photoemission Spectroscopy 255 (2014)
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Reliability of La-Doped Hf-Based Dielectrics nMOSFETs

Chang Yong Kang, P.D. Kirsch, Byoung Hun Lee, Hsing-Huang Tseng and R. Jammy
IEEE Transactions on Device and Materials Reliability 9 (2) 171 (2009)
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Probing defects at interfaces and interlayers of low-dimensional Si/insulator (HfO2; LaAlO3) structures by electron spin resonance

A. Stesmans and V.V. Afanas’ev
Physica B: Condensed Matter 401-402 550 (2007)
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Determining the Optimized Layer-by-Layer Film Architecture With Dendrimer/Carbon Nanotubes for Field-Effect Sensors

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IEEE Sensors Journal 17 (6) 1735 (2017)
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LCAO Calculations of (001) Surface Oxygen Vacancy Structure in Y-Doped BaZrO3

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Integrated Ferroelectrics 123 (1) 1 (2011)
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Simulation of Graphene Base Transistors With Bilayer Tunnel Oxide Barrier: Model Calibration and Performance Projection

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IEEE Electron Device Letters 37 (11) 1489 (2016)
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Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- application

A. Fissel, M. Czernohorsky and H.J. Osten
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Superiority of DFT+U with non-linear core correction for open-shell binary rare-earth metal oxides: a case study of native point defects in cerium oxides

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Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties

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Characterization of Semiconductor Heterostructures and Nanostructures 685 (2013)
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Interface models and processing technologies for surface passivation and interface control in III–V semiconductor nanoelectronics

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Optimizing the internal electric field distribution of alternating current driven organic light-emitting devices for a reduced operating voltage

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Integration of Amorphous $\hbox{Yb}_{2}\hbox{O}_{3}$ and Crystalline $\hbox{ZrTiO}_{4}$ as Gate Stack for Aggressively Scaled MOS Devices

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IEEE Electron Device Letters 33 (3) 426 (2012)
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Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN

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Synthesis of germanium nanocrystals in hafnium aluminum oxide matrix

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Journal of Applied Physics 101 (11) 114310 (2007)
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Cathodo- and photoluminescence increase in amorphous hafnium oxide under annealing in oxygen

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High-k Gate Dielectrics for CMOS Technology

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High-k Gate Dielectrics for CMOS Technology 31 (2012)
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Solar water oxidation in sputter-deposited nanocrystalline WO3 photoanodes via tuning of Ar:O2 flow rate combinations

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Electrode effects on the conduction mechanisms in HfO2-based metal-insulator-metal capacitors

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Atomic layer deposition of HfO2 thin films using H2O2 as oxidant

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Applied Surface Science 301 451 (2014)
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Activation of hole charge carriers and generation of electromotive force in gabbro blocks subjected to nonuniform loading

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Journal of Geophysical Research: Solid Earth 118 (3) 915 (2013)
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Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

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Improving dielectric performance in anodic aluminum oxide via detection and passivation of defect states

M. Mibus, C. Jensen, X. Hu, et al.
Applied Physics Letters 104 (24) 244103 (2014)
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Interface engineering for high performance graphene electronic devices

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Nano Convergence 2 (1) 11 (2015)
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Gate-Stack Engineering in $n$-Type Ultrascaled Si Nanowire Field-Effect Transistors

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Atomic layer deposited zirconium oxide electron injection layer for efficient organic light emitting diodes

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Organic Electronics 14 (1) 312 (2013)
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Structural and Electronic Properties of GaN (0001)/α-Al2O3(0001) Interface

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Advances in Condensed Matter Physics 2015 1 (2015)
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Applied Physics Letters 101 (22) 222114 (2012)
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Optical properties and thermal stability of LaYbO3 ternary oxide for high-k dielectric application

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Analysis of Off-State Leakage Current Characteristics and Mechanisms of Nanoscale MOSFETs with a High- k Gate Dielectric

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Chinese Physics Letters 29 (12) 127301 (2012)
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Electronic defects in LaAlO3

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White light emission from alternating current organic light-emitting devices using high frequency color-mixing

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Negative differential resistance in ultrathin Ge-on-insulator FETs

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Oxygen vacancy estimation of high k metal gate using thermal dynamic model

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Electronic structure of α-Al2O3: Ab initio simulations and comparison with experiment

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Microelectronic Engineering 88 (3) 282 (2011)
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Band offsets of high K gate oxides on high mobility semiconductors

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Enhanced thermoelectric performance through carrier scattering at spherical nanoparticles in Bi0.5Sb1.5Te3/Ta2O5 composites

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Dielectric and insulating properties of SrTiO3/Si heterostructure controlled by cation concentration

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Growth and dielectric properties of tetragonal ZrO2films by limited reaction sputtering

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Charge Trapping and Decay Mechanism in Post Deposition Annealed Er₂O₃ MOS Capacitors by Nanoscopic and Macroscopic Characterization

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Dielectrics in Electric Fields, Second Edition 289 (2016)
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Nonvolatile memory capacitors based on Al2O3 tunneling and HfO2 blocking layers with charge storage in atomic-layer-deposited Pt nanocrystals

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Applied Surface Science 289 332 (2014)
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New Precursors for the CVD of Zirconium and Hafnium Oxide Films

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Leakage current in high dielectric oxides: Role of defect-induced energies

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Journal of the Institute of Electronics Engineers of Korea 50 (2) 98 (2013)
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Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3

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Microelectronic Engineering 84 (9-10) 2278 (2007)
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Formation of W/HfO2/Si gate structures using in situ magnetron sputtering and rapid thermal annealing

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Technical Physics 59 (5) 711 (2014)
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Ab initio modeling of electronic and optical properties of hafnium silicates

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Computational Materials Science 44 (3) 929 (2009)
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UV-protection and photocatalytic properties of electrospun polyacrylonitrile nanofibrous mats coated with TiO2 nanofilm via sol–gel

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Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition

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Applied Physics Letters 100 (17) 173113 (2012)
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ISIJ International 57 (1) 23 (2017)
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Effects of successive additions of two capping ligands on the structural properties of PbO nanoparticles

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Changes in Electronic Structure of La[sub x]Al[sub y]O Films as a Function of Postdeposition Annealing Temperature

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Hydrogen shuttling near Hf-defect complexes in Si∕SiO2∕HfO2 structures

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Applied Physics Letters 91 (23) 233503 (2007)
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Electrochemical and surface analyses of nanostructured Ti–24Nb–4Zr–8Sn alloys in simulated body solution

J. Li, S.J. Li, Y.L. Hao, et al.
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Effect of Low Power Deposition and Low Oxidation Temperature on the Interfacial and Structural Properties of sputtered HfO2 Gate Dielectrics

Auxence Minko, Gustavo S. Belo, Sergei Rudenja and Douglas A. Buchanan
MRS Proceedings 1394 mrsf11-1394-m04-10 (2012)
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Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium

N. Jain, Y. Zhu, D. Maurya, et al.
Journal of Applied Physics 115 (2) 024303 (2014)
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The influence of Coulomb centers located in HfO[sub 2]/SiO[sub 2] gate stacks on the effective electron mobility

Sylvain Barraud, Olivier Bonno and Mikaël Cassé
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Studies of the structural, electronic and dielectric properties of Ca1−xSrxTiO3

HaiChuan Chen, JianPing Long, Lijun Yang, XueSong Wei and KaMa Huang
Physica B: Condensed Matter 407 (18) 3705 (2012)
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The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO 2 high-k dielectrics

Ruo Zheng Wang, Sheng Li Wu, Xin Yu Li and Jin Tao Zhang
Solid-State Electronics 133 6 (2017)
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Effect of crystallographic structure on electrical and mechanical characteristics of Sm2O3-Doped CeO2 films

M. Hartmanová, V. Navrátil, V. Buršíková, F. Kundracik and C. Mansilla
Russian Journal of Electrochemistry 47 (5) 505 (2011)
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High-k Gate Dielectrics for CMOS Technology

Fu-Chien Chiu, Somnath Mondal and Tung-Ming Pan
High-k Gate Dielectrics for CMOS Technology 111 (2012)
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High mobility field effect transistor of SnOx on glass using HfOx gate oxide

Chanjong Ju, Chulkwon Park, Hyeonseok Yang, et al.
Current Applied Physics 16 (3) 300 (2016)
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Accurate Calculation of Gate Tunneling Current in Double-Gate and Single-Gate SOI MOSFETs Through Gate Dielectric Stacks

Ferney A. Chaves, David Jimenez, Francisco J. Garcia Ruiz, Andrés Godoy and Jordi Sune
IEEE Transactions on Electron Devices 59 (10) 2589 (2012)
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Hafnium zirconate gate dielectric for advanced gate stack applications

R. I. Hegde, D. H. Triyoso, S. B. Samavedam and B. E. White
Journal of Applied Physics 101 (7) 074113 (2007)
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Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric

Ming Wen, Jingping Xu, Lu Liu, Pui-To Lai and Wing-Man Tang
IEEE Transactions on Electron Devices 64 (3) 1020 (2017)
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Oxide Ultrathin Films

Gennadi Bersuker, Keith McKenna and Alexander Shluger
Oxide Ultrathin Films 101 (2012)
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Stability of HfO2/SiOx/Si surficial films at ultralow oxygen activity

E. Jud, M. Tang and Y.-M. Chiang
Journal of Applied Physics 103 (11) 114108 (2008)
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Functional Metal Oxides

Lily Mandal, Weinan Lin, James Lourembam, Satishchandra Ogale and Tom Wu
Functional Metal Oxides 419 (2013)
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Atomic Layer Deposition of Aluminum Oxide for Surface Passivation of InGaAs∕InP Heterojunction Bipolar Transistors

R. Driad, F. Benkhelifa, L. Kirste, M. Mikulla and O. Ambacher
Journal of The Electrochemical Society 158 (12) H1279 (2011)
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Effects of plasma immersion ion nitridation on dielectric properties of HfO2

L. Wang, K. Xue, J. B. Xu, A. P. Huang and Paul K. Chu
Applied Physics Letters 90 (12) 122901 (2007)
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Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices

O. Khaldi, F. Jomni, P. Gonon, C. Mannequin and B. Yangui
Applied Physics A 116 (4) 1647 (2014)
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LanthanideN,N-Dimethylaminodiboranates: Highly Volatile Precursors for the Deposition of Lanthanide-Containing Thin Films

Scott R. Daly, Do Young Kim, Yu Yang, John R. Abelson and Gregory S. Girolami
Journal of the American Chemical Society 132 (7) 2106 (2010)
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High-k Gate Dielectrics for CMOS Technology

Yi Zhao
High-k Gate Dielectrics for CMOS Technology 185 (2012)
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Oxygen vacancy in monoclinic HfO2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments

Peter Broqvist and Alfredo Pasquarello
Applied Physics Letters 89 (26) 262904 (2006)
DOI: 10.1063/1.2424441
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MOS Devices With High-κ (ZrO$_2$) $_x$(La $_2$O$_3$) $_{1-x}$ Alloy as Gate Dielectric Formed by Depositing ZrO $_2$/La$_2$O $_3$/ZrO$_2$ Laminate and Annealing

Yung-Hsien Wu, Lun-Lun Chen, Rong-Jhe Lyu, et al.
IEEE Transactions on Nanotechnology 11 (3) 483 (2012)
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Ceramics Science and Technology

Sanjay Mathur, Aadesh Pratap Singh, Ralf Müller, et al.
Ceramics Science and Technology 291 (2014)
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Microencapsulation of Moisture-Sensitive CaS:Eu[sup 2+] Particles with Aluminum Oxide

N. Avci, J. Musschoot, P. F. Smet, et al.
Journal of The Electrochemical Society 156 (11) J333 (2009)
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Solvothermal approach for low temperature deposition of aluminium oxide thin films

XiaoFei Duan, Nguyen H. Tran, Nicholas K. Roberts and Robert N. Lamb
Thin Solid Films 518 (15) 4290 (2010)
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Defects in Microelectronic Materials and Devices

J Robertson, K Xiong and K Tse
Defects in Microelectronic Materials and Devices (2008)
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Electrostatic Gating of Ultrathin Films

A.M. Goldman
Annual Review of Materials Research 44 (1) 45 (2014)
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High temperature thermal stability of the HfO2/Ge (100) interface as a function of surface preparation studied by synchrotron radiation core level photoemission

Rajesh Kumar Chellappan, Durga Rao Gajula, David McNeill and Greg Hughes
Applied Surface Science 292 345 (2014)
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Fabrication of polycrystalline aluminum oxide thin films via hydrolysis and hydrothermal reactions in solutions

XiaoFei Duan, Irving Liaw, Nguyen H. Tran and Robert N. Lamb
Thin Solid Films 520 (1) 25 (2011)
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Electrochemical characterization of nanostructured Ti–24Nb–4Zr–8Sn alloy in 3.5% NaCl solution

J. Li, S.J. Li, Y.L. Hao and R. Yang
International Journal of Hydrogen Energy 39 (30) 17452 (2014)
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Current transport analysis of ZrO2 thin films: Effects of post-deposition annealing

Heejun Jeong
Journal of the Korean Physical Society 65 (11) 1903 (2014)
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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Yi Zhao, Koji Kita and Akira Toriumi
Applied Physics Letters 96 (24) 242901 (2010)
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Electron-Related Phenomena at the $\hbox{TaN/Al}_{2} \hbox{O}_{3}$ Interface

Rosario Rao, Paolo Lorenzi, Gabriella Ghidini, Fabrizio Palma and Fernanda Irrera
IEEE Transactions on Electron Devices 57 (3) 637 (2010)
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Analytical modeling of direct tunneling current through gate stacks for the determination of suitable high-kdielectrics for nanoscale double-gate MOSFETs

Ghader Darbandy, Romain Ritzenthaler, François Lime, et al.
Semiconductor Science and Technology 26 (4) 045002 (2011)
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Method to characterize dielectric properties of powdery substances

M. Tuhkala, J. Juuti and H. Jantunen
Journal of Applied Physics 114 (1) 014108 (2013)
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Atomic layer deposition of scandium-based oxides

Laura Nyns, Judit G. Lisoni, Geert Van den Bosch, Sven Van Elshocht and Jan Van Houdt
physica status solidi (a) 211 (2) 409 (2014)
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Ceramics Science and Technology

Sanjay Mathur, Aadesh Pratap Singh, Ralf Müller, et al.
Ceramics Science and Technology 291 (2012)
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Fabrication and Characterization of Polymer-Enhanced TSVs, Inductors, and Antennas for Mixed-Signal Silicon Interposer Platforms

Paragkumar A. Thadesar and Muhannad S. Bakir
IEEE Transactions on Components, Packaging and Manufacturing Technology 6 (3) 455 (2016)
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Oxygen vacancy in Al2O3: Photoluminescence study and first-principle simulation

V.A. Pustovarov, T.V. Perevalov, V.A. Gritsenko, T.P. Smirnova and A.P. Yelisseyev
Thin Solid Films 519 (19) 6319 (2011)
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Passivation of oxygen vacancy states in HfO2 by nitrogen

K. Xiong, J. Robertson and S. J. Clark
Journal of Applied Physics 99 (4) 044105 (2006)
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Progress of High-k Dielectrics Applicable to SONOS-Type Nonvolatile Semiconductor Memories

Zhenjie Tang, Zhiguo Liu and Xinhua Zhu
Transactions on Electrical and Electronic Materials 11 (4) 155 (2010)
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Physics-based surface potential, electric field and drain current model of aδp+Si1–xGexgate–drain underlap nanoscale n-TFET

Rupam Goswami, Brinda Bhowmick and Srimanta Baishya
International Journal of Electronics 1 (2016)
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Thermal stability of amorphous LaScO3 films on silicon

L. F. Edge, D. G. Schlom, S. Rivillon, et al.
Applied Physics Letters 89 (6) 062902 (2006)
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Interface-controlled high dielectric constant Al2O3/TiOx nanolaminates with low loss and low leakage current density for new generation nanodevices

Geunhee Lee, Bo-Kuai Lai, Charudatta Phatak, Ram S. Katiyar and Orlando Auciello
Journal of Applied Physics 114 (2) 027001 (2013)
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Interfacial atomic structures, energetics and band offsets of Ge:ZrO2 interfaces

Koon-Yiu Tse and John Robertson
Journal of Applied Physics 100 (9) 093713 (2006)
DOI: 10.1063/1.2369645
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High-temperature thermal stability study of 1 nm Al2O3deposited on InAs surfaces investigated by synchrotron radiation based photoemission spectroscopy

Rajesh Kumar Chellappan, Durga Rao Gajula, David McNeill and Greg Hughes
Journal of Physics D: Applied Physics 47 (5) 055107 (2014)
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Band gaps and defect levels in functional oxides

J. Robertson, K. Xiong and S.J. Clark
Thin Solid Films 496 (1) 1 (2006)
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Interfacial and electrical properties of radio frequency sputtered ultra-thin TiO2 film for gate oxide applications

Madhuchhanda Nath and Asim Roy
Journal of Materials Science: Materials in Electronics 26 (11) 9107 (2015)
DOI: 10.1007/s10854-015-3598-7
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Deposition and post-deposition annealing of thin Y2O3 film on n-type Si in argon ambient

Hock Jin Quah and Kuan Yew Cheong
Materials Chemistry and Physics 130 (3) 1007 (2011)
DOI: 10.1016/j.matchemphys.2011.08.024
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High-K dielectrics for the gate stack

Jean-Pierre Locquet, Chiara Marchiori, Maryline Sousa, Jean Fompeyrine and Jin Won Seo
Journal of Applied Physics 100 (5) 051610 (2006)
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The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers

P. Thangadurai, W.D. Kaplan, V. Mikhelashvili and G. Eisenstein
Microelectronics Reliability 49 (7) 716 (2009)
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Formation of thin-film HfO2/Si(100) structures by high-frequency magnetron sputtering

V. I. Rudakov, E. A. Bogoyavlenskaya, Yu. I. Denisenko and V. V. Naumov
Russian Microelectronics 40 (6) 383 (2011)
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Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient

Yew Hoong Wong and Kuan Yew Cheong
Electronic Materials Letters 8 (1) 47 (2012)
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Control of the Dirac point in graphene by UV light

A. Yurgens, N. Lindvall, J. Sun, Y. Nam and Y. W. Park
JETP Letters 98 (11) 704 (2014)
DOI: 10.1134/S0021364013240211
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Electronic stopping force of 12C, 28Si and 63Cu ions in HfO2 and SiO2 dielectric films

M. Msimanga, C.A. Pineda-Vargas, T. Hlatshwayo, et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 322 54 (2014)
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CMUTs with high-K atomic layer deposition dielectric material insulation layer

Toby Xu, Coskun Tekes and F. Degertekin
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 61 (12) 2121 (2014)
DOI: 10.1109/TUFFC.2014.006481
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Comprehensive Semiconductor Science and Technology

J. Robertson
Comprehensive Semiconductor Science and Technology 132 (2011)
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Soft x-ray photoemission study of the thermal stability of the Al2O3/Ge (100) interface as a function of surface preparation

Rajesh Kumar Chellappan, Durga Rao Gajula, David McNeill and Greg Hughes
Journal of Applied Physics 114 (8) 084312 (2013)
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Electrical instability in LaLuO3 based metal–oxide–semiconductor capacitors and role of the metal electrodes

Rosario Rao and Fernanda Irrera
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 31 (1) 01A116 (2013)
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Radiation Induced Charge Trapping in Sputtered ${\rm ZrO}_{\rm 2} \!\! : \!\! {\rm N}$ Dielectric Thin Films on Silicon

Ashwath Rao, Joyline D'sa, Saurabh Goyal and B. R. Singh
IEEE Transactions on Nuclear Science 61 (4) 2397 (2014)
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Atomic and electronic structures of lutetium oxide Lu2O3

V. V. Kaichev, T. I. Asanova, S. B. Erenburg, et al.
Journal of Experimental and Theoretical Physics 116 (2) 323 (2013)
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A Thin-Film Transistor With High Drain Current Induced by a Trap-Assisted Electric Double Layer

Ankita Gangwar and Baquer Mazhari
IEEE Transactions on Electron Devices 63 (12) 4776 (2016)
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Nanoscale CMOS

O. Engström, I. Z. Mitrovic, S. Hall, et al.
Nanoscale CMOS 23 (2013)
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Ge-Based Nonvolatile Memory Formed on Si Substrate with Ge-Stabilized Tetragonal ZrO2 as Charge Trapping Layer

Yung-Hsien Wu, Jia-Rong Wu, Min-Lin Wu, Lun-Lun Chen and Chia-Chun Lin
Journal of The Electrochemical Society 158 (4) H410 (2011)
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Correlation between phase and optical properties of yttrium-doped hafnium oxide nanocrystalline thin films

A. Ortega, E.J. Rubio, K. Abhilash and C.V. Ramana
Optical Materials 35 (9) 1728 (2013)
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Ferroelectric-Gate Field Effect Transistor Memories

Mitsue Takahashi and Shigeki Sakai
Topics in Applied Physics, Ferroelectric-Gate Field Effect Transistor Memories 131 23 (2016)
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Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators

Yi Zhao, Koji Kita, Kentaro Kyuno and Akira Toriumi
Applied Physics Letters 94 (4) 042901 (2009)
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Trapped charge dynamics in a sol–gel based TiO2high-kgate dielectric silicon metal–oxide–semiconductor field effect transistor

M Ziaur Rahman Khan, D G Hasko, M S M Saifullah and M E Welland
Journal of Physics: Condensed Matter 21 (21) 215902 (2009)
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HfO2-assisted SiO2 reduction in HfO2/SiO2/Si stacks

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio and Akira Toriumi
Thin Solid Films 557 272 (2014)
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Effect of post-deposition annealing temperature on CeO2 thin film deposited on silicon substrate via RF magnetron sputtering technique

Soo Kiet Chuah, Kuan Yew Cheong, Zainovia Lockman and Zainuriah Hassan
Materials Science in Semiconductor Processing 14 (2) 101 (2011)
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Capacitance–voltage characteristics of sub-nanometric Al2O3 / TiO2 laminates: dielectric and interface charge densities

Abdelkader Kahouli, Marwa Ben Elbahri, Oleg Lebedev and Ulrike Lüders
Journal of Physics: Condensed Matter 29 (27) 275301 (2017)
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Oxygen deficiency defects in amorphous Al2O3

T. V. Perevalov, O. E. Tereshenko, V. A. Gritsenko, et al.
Journal of Applied Physics 108 (1) 013501 (2010)
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Titania/Alumina Bilayer Gate Dielectrics for Ge MOS Devices: Frequency- and Temperature-Dependent Electrical Characteristics

Shankar Swaminathan and Paul C. McIntyre
Electrochemical and Solid-State Letters 13 (9) G79 (2010)
DOI: 10.1149/1.3457480
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Analytical modeling of the gate tunneling leakage for the determination of adequate high-k dielectrics in double-gate SOI MOSFETs at the 22nm node

Ghader Darbandy, Romain Ritzenthaler, Francois Lime, et al.
Solid-State Electronics 54 (10) 1083 (2010)
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Migration of oxygen vacancy in HfO2 and across the HfO2∕SiO2 interface: A first-principles investigation

Nathalie Capron, Peter Broqvist and Alfredo Pasquarello
Applied Physics Letters 91 (19) 192905 (2007)
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Conduction and field induced degradation in thin ZrO2 films sputtered in nitrogen containing plasma on silicon

Ashwath Rao, Joyline D’sa, Saurabh Goyal and B. R. Singh
Journal of Materials Science: Materials in Electronics 25 (3) 1583 (2014)
DOI: 10.1007/s10854-014-1772-y
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Novel photodefined polymer-embedded vias for silicon interposers

Paragkumar A Thadesar and Muhannad S Bakir
Journal of Micromechanics and Microengineering 23 (3) 035003 (2013)
DOI: 10.1088/0960-1317/23/3/035003
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Electrochemical Mechanical Polishing of Copper with High Permittivity Abrasives

Weisi Li, Dongming Guo, Zhuji Jin, Zhe Wang and Zewei Yuan
Materials and Manufacturing Processes 28 (2) 207 (2013)
DOI: 10.1080/10426914.2012.677900
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Characterization of the interface between the Hf-based high-k thin film and the Si using spatially resolved electron energy-loss spectroscopy

X.F. Wang, Quan Li, P.F. Lee, J.Y. Dai and X.G. Gong
Micron 41 (1) 15 (2010)
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Nature and stability of the (100)Si∕LaAlO3 interface probed by paramagnetic defects

A. Stesmans, K. Clémer, V. V. Afanas’ev, L. F. Edge and D. G. Schlom
Applied Physics Letters 89 (11) 112121 (2006)
DOI: 10.1063/1.2219334
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Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs

Yang Liu, A. Shanware, L. Colombo and R. Dutton
IEEE Electron Device Letters 27 (6) 489 (2006)
DOI: 10.1109/LED.2006.874760
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Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer

Kuniaki HASHIMOTO, Akio OHTA, Hideki MURAKAMI, Seiichiro HIGASHI and Seiichi MIYAZAKI
IEICE Transactions on Electronics E96.C (5) 674 (2013)
DOI: 10.1587/transele.E96.C.674
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First principles study of structural and electronic properties of cubic phase of ZrO2 and HfO2

Yong-Liang Yang, Xiao-Li Fan, Chong Liu and Run-Xin Ran
Physica B: Condensed Matter 434 7 (2014)
DOI: 10.1016/j.physb.2013.10.037
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Nanocrystalline LaYSrO films for liquid-crystal alignment via a solution process

Seon Yeong Kim, Hong-Gyu Park, Min-Jae Cho, Hae-Chang Jeong and Dae-Shik Seo
Liquid Crystals 41 (7) 940 (2014)
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Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO 2 and fabricated at low temperature

Joel Molina, Reydezel Torres, Alok Ranjan and Kin-Leong Pey
Materials Science in Semiconductor Processing 66 191 (2017)
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Ultrahigh resolution imaging of local structural distortions in intergrowth tungsten bronzes

A.I. Kirkland, J. Sloan and S. Haigh
Ultramicroscopy 107 (6-7) 501 (2007)
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Handbook of Cleaning in Semiconductor Manufacturing

Muhammad M. Hussain, Denis Shamiryan, Vasile Paraschiv, Kenichi Sano and Karen A. Reinhardt
Handbook of Cleaning in Semiconductor Manufacturing 237 (2011)
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Study on the surface erosion route to the fabrication of TiO2 hollow spheres

Liu Lei, Cui Yuming, Li Bo, Zhou Xingfu and Ding Weiping
Applied Surface Science 256 (8) 2596 (2010)
DOI: 10.1016/j.apsusc.2009.11.001
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First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si–SiO2–HfO2 stack

Peter Broqvist, Audrius Alkauskas, Julien Godet and Alfredo Pasquarello
Journal of Applied Physics 105 (6) 061603 (2009)
DOI: 10.1063/1.3055347
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Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

Shankar Swaminathan, Michael Shandalov, Yasuhiro Oshima and Paul C. McIntyre
Applied Physics Letters 96 (8) 082904 (2010)
DOI: 10.1063/1.3313946
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Photonics

Robert H. Lipson
Photonics 133 (2015)
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Understanding Structure and Stability of Monoclinic Zirconia Surfaces from First-Principles Calculations

Andrey S. Bazhenov and Karoliina Honkala
Topics in Catalysis 60 (6-7) 382 (2017)
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Band gaps and dielectric constants of amorphous hafnium silicates: A first-principles investigation

Peter Broqvist and Alfredo Pasquarello
Applied Physics Letters 90 (8) 082907 (2007)
DOI: 10.1063/1.2643300
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High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ${\rm ZrO}_{2}$ Gate Dielectric

Yana Gao, Xifeng Li, Longlong Chen, et al.
IEEE Electron Device Letters 35 (5) 554 (2014)
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Dielectric constants of amorphous hafnium aluminates: First-principles study

Hiroyoshi Momida, Tomoyuki Hamada, Yoshiteru Takagi, et al.
Physical Review B 75 (19) 195105 (2007)
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Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy 263 (2008)
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Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

Vladimir Djara, Marilyne Sousa, Nikola Dordevic, et al.
Microelectronic Engineering 147 231 (2015)
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Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

Jiro Yota, Hong Shen and Ravi Ramanathan
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (1) 01A134 (2013)
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Optical studies of amorphous Ge nanostructures in Al2O3 produced by pulsed laser deposition

J. Martín-Sánchez, J. Toudert, R. Serna, A. de Andrés and J. García-López
Thin Solid Films 541 92 (2013)
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Nanoscale channel engineered double gate MOSFET for mixed signal applications using high-k dielectric

D Nirmal, P Vijayakumar, K Shruti and N Mohankumar
International Journal of Circuit Theory and Applications 41 (6) 608 (2013)
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Synthesis and Dielectric Studies of Monoclinic Nanosized Zirconia

I. Flavia Princess Nesamani, V. Lakshmi Prabha, Aswathy Paul and D. Nirmal
Advances in Condensed Matter Physics 2014 1 (2014)
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Bonding and interface states ofSi:HfO2andSi:ZrO2interfaces

P. W. Peacock, K. Xiong, K. Tse and J. Robertson
Physical Review B 73 (7) 075328 (2006)
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Comparing Electron Recombination via Interfacial Modifications in Dye-Sensitized Solar Cells

Luping Li, Shikai Chen, Cheng Xu, et al.
ACS Applied Materials & Interfaces 6 (23) 20978 (2014)
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BEEM studies on metal high K-dielectric HfO2 interfaces

Yi Zheng, Cedric Troadec, Andrew T S Wee, et al.
Journal of Physics: Conference Series 61 1347 (2007)
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Studies on Electrical Properties of Hybrid Polymeric Gate Dielectrics for Field Effect Transistors

Davoud Dastan, Suresh W. Gosavi and Nandu B. Chaure
Macromolecular Symposia 347 (1) 81 (2015)
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Characterization of dielectric layers grown at low temperature by atomic layer deposition

Sylwia Gieraltowska, Lukasz Wachnicki, Bartlomiej S. Witkowski, et al.
Thin Solid Films 577 97 (2015)
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High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics

Mazran Esro, George Vourlias, Christopher Somerton, William I. Milne and George Adamopoulos
Advanced Functional Materials 25 (1) 134 (2015)
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Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films

S. Dueñas, H. Castán, H. García, et al.
Journal of Non-Crystalline Solids 354 (2-9) 404 (2008)
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The atomic and electron structure of ZrO2

A. V. Shaposhnikov, D. V. Gritsenko, I. P. Petrenko, et al.
Journal of Experimental and Theoretical Physics 102 (5) 799 (2006)
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Effects of annealing time on the electrical properties of the Y2O3gate on silicon

Hock Jin Quah and Kuan Yew Cheong
Journal of Experimental Nanoscience 10 (1) 19 (2015)
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Industrial Chemistry of Oxides for Emerging Applications

Lech Pawłowski
Industrial Chemistry of Oxides for Emerging Applications 1 (2018)
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Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor

J. Charles Pravin, D. Nirmal, P. Prajoon, N. Mohan Kumar and J. Ajayan
Superlattices and Microstructures 104 470 (2017)
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Dielectric constant measurement of zeolite powders by time-domain reflectometry

Minwei Sun, Wolfgang Maichen, Ramdas Pophale, et al.
Microporous and Mesoporous Materials 123 (1-3) 10 (2009)
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High Discharge Energy Density and Efficiency in Newly Designed PVDF@SiO2–PVDF Composites for Energy Capacitors

Seung-Hyun Kim, Hong Suk Kang, Eun-Ho Sohn, et al.
ACS Applied Energy Materials 3 (9) 8937 (2020)
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Multi-petahertz electron interference in Cr:Al2O3 solid-state material

Hiroki Mashiko, Yuta Chisuga, Ikufumi Katayama, et al.
Nature Communications 9 (1) (2018)
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Photonic curing of sol–gel derived HfO2 dielectrics for organic field-effect transistors

Kornelius Tetzner, Kurt A. Schroder and Karlheinz Bock
Ceramics International 40 (10) 15753 (2014)
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Intrinsically ionic conductive cellulose nanopapers applied as all solid dielectrics for low voltage organic transistors

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Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiOx/W cross-point structure

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Investigation of the gate oxide leakage current of low temperature formed hafnium oxide films

E. Verrelli and D. Tsoukalas
Journal of Applied Physics 113 (11) 114103 (2013)
DOI: 10.1063/1.4795278
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Band offsets of nitrided ultrathin hafnium silicate films

N. T. Barrett, O. Renault, P. Besson, Y. Le Tiec and F. Martin
Applied Physics Letters 88 (16) 162906 (2006)
DOI: 10.1063/1.2196235
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Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics

Eun Ji Kim, Michael Shandalov, Krishna C. Saraswat and Paul C. McIntyre
Applied Physics Letters 98 (3) 032108 (2011)
DOI: 10.1063/1.3527977
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High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition

Flora M. Li, Bernhard C. Bayer, Stephan Hofmann, et al.
Applied Physics Letters 98 (25) 252903 (2011)
DOI: 10.1063/1.3601487
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Atomic and electronic structure of amorphous and crystalline hafnium oxide: X-ray photoelectron spectroscopy and density functional calculations

T. V. Perevalov, V. A. Gritsenko, S. B. Erenburg, et al.
Journal of Applied Physics 101 (5) 053704 (2007)
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Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices

Shaoheng Cheng, Liwen Sang, Meiyong Liao, et al.
Applied Physics Letters 101 (23) 232907 (2012)
DOI: 10.1063/1.4770059
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Hot electron transport in Au–HfO2–SiO2–Si structures studied by ballistic electron emission spectroscopy

Yi Zheng, Andrew T. S. Wee, K. L. Pey, et al.
Applied Physics Letters 90 (14) 142915 (2007)
DOI: 10.1063/1.2720346
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Effect of ionic substitutions on the structure and dielectric properties of hafnia: A first principles study

Eric Cockayne
Journal of Applied Physics 103 (8) 084103 (2008)
DOI: 10.1063/1.2903870
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Reduced electron back-injection in Al2O3/AlOx/Al2O3/graphene charge-trap memory devices

Sejoon Lee, Emil B. Song, Sung Min Kim, et al.
Applied Physics Letters 101 (24) 243109 (2012)
DOI: 10.1063/1.4770381
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Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

O. Engström, B. Raeissi and J. Piscator
Journal of Applied Physics 103 (10) 104101 (2008)
DOI: 10.1063/1.2921795
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Control of interfacial silicate between HfO2 and Si by high concentration ozone

L. Wang, K. Xue, J. B. Xu, A. P. Huang and Paul K. Chu
Applied Physics Letters 88 (7) 072903 (2006)
DOI: 10.1063/1.2173708
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Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators

V. V. Afanas’ev, S. Shamuilia, A. Stesmans, et al.
Applied Physics Letters 88 (13) 132111 (2006)
DOI: 10.1063/1.2191736
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Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide

R. Driad, R. E. Sah, R. Schmidt and L. Kirste
Applied Physics Letters 100 (1) 014102 (2012)
DOI: 10.1063/1.3673564
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Structural and dielectric properties of epitaxial Sm2O3 thin films

H. Yang, H. Wang, H. M. Luo, et al.
Applied Physics Letters 92 (6) 062905 (2008)
DOI: 10.1063/1.2842416
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Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

Jaesoo Ahn, Irina Geppert, Marika Gunji, et al.
Applied Physics Letters 99 (23) 232902 (2011)
DOI: 10.1063/1.3662966
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Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on InP substrates

Xinqiang Zhang, Hailing Tu, Hongbin Zhao, et al.
Applied Physics Letters 99 (13) 132902 (2011)
DOI: 10.1063/1.3643470
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Electron-phonon interaction effects on the direct gap transitions of nanoscale Si films

V. K. Kamineni and A. C. Diebold
Applied Physics Letters 99 (15) 151903 (2011)
DOI: 10.1063/1.3650470
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Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

Peter Broqvist, Audrius Alkauskas and Alfredo Pasquarello
Applied Physics Letters 92 (13) 132911 (2008)
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Hafnium oxide gate dielectrics on sulfur-passivated germanium

Martin M. Frank, Steven J. Koester, Matthew Copel, et al.
Applied Physics Letters 89 (11) 112905 (2006)
DOI: 10.1063/1.2338751
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Single shot measurement of the lifetime of a trapped electron in the gate dielectric of a high-k field effect transistor

M. Ziaur Rahman Khan, D. G. Hasko, M. S. M. Saifullah and M. E. Welland
Applied Physics Letters 93 (19) 193501 (2008)
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Effect of Al addition on the microstructure and electronic structure of HfO2 film

X. F. Wang, Quan Li, R. F. Egerton, et al.
Journal of Applied Physics 101 (1) 013514 (2007)
DOI: 10.1063/1.2405741
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Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon

S. Dueñas, H. Castán, H. García, et al.
Journal of Applied Physics 99 (5) 054902 (2006)
DOI: 10.1063/1.2177383
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Defect states in the high-dielectric-constant gate oxide HfSiO4

K. Xiong, Y. Du, K. Tse and J. Robertson
Journal of Applied Physics 101 (2) 024101 (2007)
DOI: 10.1063/1.2409662
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Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

J. Müller, S. Knebel, D. Bräuhaus and U. Schröder
Applied Physics Letters 100 (8) 082905 (2012)
DOI: 10.1063/1.3688915
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Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces

V. V. Afanas’ev, A. Stesmans, L. F. Edge, et al.
Applied Physics Letters 88 (3) 032104 (2006)
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Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

Jung-Kyu Lee, Sunghun Jung, Jinwon Park, et al.
Applied Physics Letters 101 (10) 103506 (2012)
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Spectroscopic investigation of the electronic structure of thin atomic layer deposition HfO2 films

Silma Alberton Corrêa, Simone Brizzi and Dieter Schmeisser
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (1) 01A117 (2016)
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Homogeneous pinhole free 1 nm Al2O3 tunnel barriers on graphene

B. Dlubak, M.-B. Martin, C. Deranlot, et al.
Applied Physics Letters 101 (20) 203104 (2012)
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Synergistic effect of non-thermal plasma–catalysis hybrid system on methane complete oxidation over Pd-based catalysts

Heesoo Lee, Dae-Hoon Lee, Young-Hoon Song, et al.
Chemical Engineering Journal 259 761 (2015)
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Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers

J. A. Caraveo-Frescas, M. N. Hedhili, H. Wang, U. Schwingenschlögl and H. N. Alshareef
Applied Physics Letters 100 (10) 102111 (2012)
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Spectroscopic and electrical properties of atomic layer deposition Al2O3 gate dielectric on surface pretreated Si substrate

Min Xu, Cong-Hui Xu, Shi-Jin Ding, et al.
Journal of Applied Physics 99 (7) 074109 (2006)
DOI: 10.1063/1.2187409
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Internal photoemission at interfaces of high-κ insulators with semiconductors and metals

V. V. Afanas’ev and A. Stesmans
Journal of Applied Physics 102 (8) 081301 (2007)
DOI: 10.1063/1.2799091
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Room Temperature Antiferromagnetic Ordering of Nanocrystalline Tb1.90Ni0.10O3

J. Mandal, M. Dalal, B. J. Sarkar and P. K. Chakrabarti
Journal of Electronic Materials 46 (2) 1107 (2017)
DOI: 10.1007/s11664-016-5077-1
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Experimental investigation of the electrical properties of atomic layer deposited hafnium-rich silicate films on n-type silicon

S. Dueñas, H. Castán, H. García, et al.
Journal of Applied Physics 100 (9) 094107 (2006)
DOI: 10.1063/1.2358831
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Paramagnetic point defects in (100)Si∕LaAlO3 structures: Nature and stability of the interface

K. Clémer, A. Stesmans, V. V. Afanas’ev, L. F. Edge and D. G. Schlom
Journal of Applied Physics 102 (3) 034516 (2007)
DOI: 10.1063/1.2749423
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Band offsets of high K gate oxides on III-V semiconductors

J. Robertson and B. Falabretti
Journal of Applied Physics 100 (1) 014111 (2006)
DOI: 10.1063/1.2213170
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Quadrupole second harmonic generation and sum-frequency generation in ZnO quantum dots

Deepti Maikhuri, S. P. Purohit and K. C. Mathur
AIP Advances 5 (4) 047115 (2015)
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Effect of Al and Y incorporation on the structure of HfO2

X. F. Wang, Quan Li and M. S. Moreno
Journal of Applied Physics 104 (9) 093529 (2008)
DOI: 10.1063/1.2973195
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Effects of Ta incorporation in La2O3 gate dielectric of InGaZnO thin-film transistor

L. X. Qian, P. T. Lai and W. M. Tang
Applied Physics Letters 104 (12) 123505 (2014)
DOI: 10.1063/1.4869761
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Phase control of HfO2-based dielectric films for higher-k materials

Jae Ho Lee, Il-Hyuk Yu, Sang Young Lee and Cheol Seong Hwang
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32 (3) 03D109 (2014)
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Multicolor and near-infrared electroluminescence from the light-emitting devices with rare-earth doped TiO2 films

Chen Zhu, Chunyan Lv, Zhifei Gao, et al.
Applied Physics Letters 107 (13) 131103 (2015)
DOI: 10.1063/1.4932064
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Memcapacitive characteristics in reactive-metal (Mo, Al)/HfOX/n-Si structures through migration of oxygen by applied voltage

Paul Yang, Young Jun Noh, Yoon-Jae Baek, et al.
Applied Physics Letters 108 (5) 052108 (2016)
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Effects of ozone oxidation on interfacial and dielectric properties of thin HfO2 films

L. Wang, Paul K. Chu, Andre Anders and Nathan W. Cheung
Journal of Applied Physics 104 (5) 054117 (2008)
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Thermally stable voltage-controlled perpendicular magnetic anisotropy in Mo|CoFeB|MgO structures

Xiang Li, Guoqiang Yu, Hao Wu, et al.
Applied Physics Letters 107 (14) 142403 (2015)
DOI: 10.1063/1.4932553
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Growth of high-density Ir nanocrystals by atomic layer deposition for nonvolatile nanocrystal memory applications

Xiao-Jie Liu, Lin Zhu, Xue-Fei Li, et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32 (4) 042201 (2014)
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Interplay between gadolinium dopants and oxygen vacancies in HfO2: A density functional theory plus Hubbard U investigation

Wei Zhang and Z. F. Hou
Journal of Applied Physics 115 (12) 124104 (2014)
DOI: 10.1063/1.4869539
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Substrate dielectric effects on graphene field effect transistors

Zhaoying Hu, Dhiraj Prasad Sinha, Ji Ung Lee and Michael Liehr
Journal of Applied Physics 115 (19) 194507 (2014)
DOI: 10.1063/1.4879236
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Thermal annealing effect on the interface structure of high-κ LaScO3 on silicon

F. Liu and G. Duscher
Applied Physics Letters 91 (15) 152906 (2007)
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Analysis of electrically biased paramagnetic defect centers in HfO2 and HfxSi1−xO2/(100)Si interfaces

P. T. Chen, B. B. Triplett, J. J. Chambers, et al.
Journal of Applied Physics 104 (1) 014106 (2008)
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Current status of polymer nanocomposite dielectrics for high-temperature applications

Yusuf Abdullahi Hassan and Hailong Hu
Composites Part A: Applied Science and Manufacturing 138 106064 (2020)
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Heterogate junctionless tunnel field-effect transistor: future of low-power devices

Shiromani Balmukund Rahi, Pranav Asthana and Shoubhik Gupta
Journal of Computational Electronics 16 (1) 30 (2017)
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Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB|MgO interface

Xiang Li, Kevin Fitzell, Di Wu, et al.
Applied Physics Letters 110 (5) 052401 (2017)
DOI: 10.1063/1.4975160
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Photocatalytic Hydrogen Generation and CO2 Conversion Using g-C3N4 Decorated Dendritic Fibrous Nanosilica: Role of Interfaces between Silica and g-C3N4

Sushma A. Rawool, Anupam Samanta, T. G. Ajithkumar, Yusuf Kar and Vivek Polshettiwar
ACS Applied Energy Materials 3 (9) 8150 (2020)
DOI: 10.1021/acsaem.0c01265
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An Investigation of Electrical and Dielectric Parameters of Sol–Gel Process Enabled $\beta $ -Ga2O3 as a Gate Dielectric Material

Ahmet Kaya, Howard Mao, Jianyi Gao, et al.
IEEE Transactions on Electron Devices 64 (5) 2047 (2017)
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Superior NBTI in High- $k$ SiGe Transistors–Part I: Experimental

M. Waltl, G. Rzepa, A. Grill, et al.
IEEE Transactions on Electron Devices 64 (5) 2092 (2017)
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Decoupling the Effects of Mass Density and Hydrogen-, Oxygen-, and Aluminum-Based Defects on Optoelectronic Properties of Realistic Amorphous Alumina

Vanessa Riffet and Julien Vidal
The Journal of Physical Chemistry Letters 8 (11) 2469 (2017)
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Synaptic transistor with a reversible and analog conductance modulation using a Pt/HfOx/n-IGZO memcapacitor

Paul Yang, Hyung Jun Kim, Hong Zheng, et al.
Nanotechnology 28 (22) 225201 (2017)
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Real-time atomistic observation of structural phase transformations in individual hafnia nanorods

Bethany M. Hudak, Sean W. Depner, Gregory R. Waetzig, et al.
Nature Communications 8 (1) 15316 (2017)
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A Suspended Six-Port Transformer-Based Power Divider for 2.4 GHz Applications

Wen-Hui Huang, I-Yu Huang, Wun-Hong Syu, Chia-Lung Sung and Chia-Hsu Hsieh
Micromachines 8 (4) 118 (2017)
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Multi-stack insulator to minimise threshold voltage drift in ZnO FET sensors operating in ionic solutions

J.D. Akrofi, M. Ebert, J.D. Reynolds, et al.
Micro and Nano Engineering 9 100072 (2020)
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Science and technology of diamond films grown on HfO2 interface layer for transformational technologies

Jesus J. Alcantar-Peña, Geunhee Lee, Erika M.A. Fuentes-Fernandez, et al.
Diamond and Related Materials 69 221 (2016)
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Nitrogen plasma-induced HfSiON film growth from Hf nanoscale islands on SiO2/Si

Takeshi Kitajima, Ryosuke Kage and Toshiki Nakano
Journal of Vacuum Science & Technology A 36 (5) 051301 (2018)
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Structural and band gaps studies of novel Al2-xHfxO3 materials toward MOS applications

Norlida Kamarulzaman, Annie Maria Mahat, Nurhanna Badar and Ce Zhou Zhao
Materials Chemistry and Physics 216 237 (2018)
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Physical and optical properties of HfO 2 NPs – Synthesis and characterization in finding its feasibility in opto-electronic devices

J. Manikantan, H.B. Ramalingam, B. Chandar Shekar, et al.
Advanced Powder Technology 28 (7) 1636 (2017)
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Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics

Jian Zhu, Xiaolong Liu, Michael L. Geier, et al.
Advanced Materials 28 (1) 63 (2016)
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Memory improvement with high-k buffer layer in metal/ SrBi2Nb2O9/Al2O3/silicon gate stack for non-volatile memory applications

Prashant Singh, Rajesh Kumar Jha, Rajat Kumar Singh and B.R. Singh
Superlattices and Microstructures 121 55 (2018)
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Perspective of zinc oxide based thin film transistors: a comprehensive review

Kavindra Kandpal and Navneet Gupta
Microelectronics International 35 (1) 52 (2018)
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Memory performance of MOS structure embedded with laser annealed gold NCs

L. Kastanis, J.L. Spear, Ch. Sargentis, et al.
Solid-State Electronics 148 63 (2018)
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Physics of Semiconductor Devices

Ekta Goel, Sanjay Kumar, Gopal Rawat, et al.
Environmental Science and Engineering, Physics of Semiconductor Devices 193 (2014)
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Physics of Semiconductor Devices

Ashwath Rao, Joyline Dsa, Saurabh Goyal and B. R. Singh
Environmental Science and Engineering, Physics of Semiconductor Devices 555 (2014)
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Intrinsic energy conversions for photon-generation in piezo-phototronic materials: A case study on alkaline niobates

Bolong Huang, Mingzi Sun and Dengfeng Peng
Nano Energy 47 150 (2018)
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Dielectric properties and resistive switching characteristics of lead zirconate titanate/hafnia heterostructures

Y. Espinal, S. P. Alpay, M. Howard and B. M. Hanrahan
Journal of Applied Physics 124 (6) 064103 (2018)
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Influence of film thickness on the dielectric characteristics of hafnium oxide layers

D.A. Golosov, N. Vilya, S.М. Zavadski, et al.
Thin Solid Films 690 137517 (2019)
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Structural and electrical properties of Ge-doped ZrO2 thin films grown by atomic layer deposition for high-k dielectrics

Bo-Eun Park, Yujin Lee, Il-Kwon Oh, et al.
Journal of Materials Science 53 (21) 15237 (2018)
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Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors

Masafumi Hirose, Toshihide Nabatame, Kazuya Yuge, et al.
Microelectronic Engineering 216 111040 (2019)
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Nanoscale potential fluctuations in nonstoichiometrics tantalum oxide

Vladimir A Gritsenko, Vladimir A Volodin, Timofey V Perevalov, et al.
Nanotechnology 29 (42) 425202 (2018)
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Modulation of VO 2 Metal–Insulator Transition by Ferroelectric HfO 2 Gate Insulator

Takeaki Yajima, Tomonori Nishimura, Takahisa Tanaka, Ken Uchida and Akira Toriumi
Advanced Electronic Materials 6 (5) 1901356 (2020)
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Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation

Kyung Ho Kim, Hans He, Claudia Struzzi, et al.
Physical Review B 102 (16) (2020)
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Magnetic Tunnel Junctions Based on Ferroelectric Hf0.5Zr0.5O2 Tunnel Barriers

Yingfen Wei, Sylvia Matzen, Thomas Maroutian, et al.
Physical Review Applied 12 (3) (2019)
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Interconnections between Electronic Structure and Optical Properties of Multilayer Nanolaminate TiAlN/Ag and Al2O3/Ag Coatings

Dmitry Wainstein, Anatoly Kovalev, Vladimir Vakhrushev, Raul Gago and Jose Endrino
Coatings 8 (8) 290 (2018)
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Atomic Layer Deposition and Characterization of Amorphous ErxTi1-xOyDielectric Ultra-Thin Films

Runshen Xu and Christos G. Takoudis
ECS Journal of Solid State Science and Technology 1 (6) N107 (2012)
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Temperature Effects on Nanocrystalline Molybdenum Oxide Embedded ZrHfO High-kNonvolatile Memory Functions

Chi-Chou Lin and Yue Kuo
ECS Journal of Solid State Science and Technology 2 (1) Q16 (2013)
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Al2O3/InGaAs Metal-Oxide-Semiconductor Interface Properties: Impact of Gd2O3and Sc2O3Interfacial Layers by Atomic Layer Deposition

M. Ameen, L. Nyns, S. Sioncke, et al.
ECS Journal of Solid State Science and Technology 3 (11) N133 (2014)
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Atomic Layer Etching of HfO2Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)2and HF

Younghee Lee, Jaime W. DuMont and Steven M. George
ECS Journal of Solid State Science and Technology 4 (6) N5013 (2015)
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Synthesis and Ionic Conductivity Studies of In- and Y-Doped Li6Hf2O7as Solid-State Electrolyte for All-Solid State Li-Ion Batteries

M. Amores, S. A. Corr and E. J. Cussen
Journal of The Electrochemical Society 164 (1) A6395 (2017)
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Cross-Point Resistive Switching Memory and Urea Sensing by Using Annealed GdOxFilm in IrOx/GdOx/W Structure for Biomedical Applications

Pankaj Kumar, Siddheswar Maikap, Sreekanth Ginnaram, et al.
Journal of The Electrochemical Society 164 (4) B127 (2017)
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First-Principles Study of Ultrathin Single-Walled Nanotube-Based Single-Electron Transistor for Fast-Switching Applications

S. Parashar
Physics of the Solid State 62 (10) 1807 (2020)
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Analysis on Tunnel Field-Effect Transistor with Asymmetric Spacer

Hyun Woo Kim and Daewoong Kwon
Applied Sciences 10 (9) 3054 (2020)
DOI: 10.3390/app10093054
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Oxide-based optical, electrical and magnetic properties switching devices with water-incorporated gate insulator

Takayoshi Katase and Hiromichi Ohta
Japanese Journal of Applied Physics 58 (9) 090501 (2019)
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Electrical Control of Spin-Injection Using Mixed Dimensional van der Waals Heterostructures

John Eric Tiessen and Junxia Shi
IEEE Transactions on Nanotechnology 19 736 (2020)
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Reducing the power consumption of two-dimensional logic transistors

Weisheng Li, Hongkai Ning, Zhihao Yu, Yi Shi and Xinran Wang
Journal of Semiconductors 40 (9) 091002 (2019)
DOI: 10.1088/1674-4926/40/9/091002
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Enhancement of Tunneling CNTFET Performance Using a High-k Dielectric Pocket

M. Ossaimee, N. Salem, M. Abouelatta and A. Shaker
ECS Journal of Solid State Science and Technology 9 (10) 101002 (2020)
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Performance Limits of an Alternating Current Electroluminescent Device

Vivian Wang, Yingbo Zhao and Ali Javey
Advanced Materials 33 (2) 2005635 (2021)
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Growth and Characterization of Ternary HfxTayOz Films via Nitrogen-Infused Wet Oxidation

Hock Jin Quah, Farah Hayati Ahmad, Way Foong Lim and Zainuriah Hassan
ACS Omega 5 (41) 26347 (2020)
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High dielectric permittivity of HfO2-based films with (La,Bi,Nb) substitution

Shingo Yoneda, Tadasu Hosokura, Tomoyasu Usui, et al.
Japanese Journal of Applied Physics 57 (11S) 11UF03 (2018)
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Fabrication of Sn@Al2O3 Core-shell Nanoparticles for Stable Nonvolatile Memory Applications

Jong-Hwan Yoon
Materials 12 (19) 3111 (2019)
DOI: 10.3390/ma12193111
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Silicon Surface Passivation by Atomic Layer Deposited Hafnium Oxide Films: Trap States Investigation Using Constant Voltage Stress Studies

Shweta Tomer, Meenakshi Devi, Abhishek Kumar, et al.
IEEE Journal of Photovoltaics 10 (6) 1614 (2020)
DOI: 10.1109/JPHOTOV.2020.3022686
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Morphology influence in rapid plasma nitriding of hafnium layer for HfSiON film growth

Takeshi Kitajima, Ryosuke Kage and Toshiki Nakano
Journal of Vacuum Science & Technology A 37 (6) 061301 (2019)
DOI: 10.1116/1.5109841
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Performance Analysis of Gate Electrode Work Function Variations in Double-gate Junctionless FET

Sandeep Kumar, Arun Kumar Chatterjee and Rishikesh Pandey
Silicon (2020)
DOI: 10.1007/s12633-020-00774-x
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Structural characteristics of samarium oxynitride on silicon substrate

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Electronic structure of an oxygen vacancy in Al2O3 from the results of Ab Initio quantum-chemical calculations and photoluminescence experiments

Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

Interlevel transitions in core–shell nanodots with dielectric environment

Defects and their passivation in high K gate oxides

Fabrication of Releasable Single-Crystal Silicon-Metal Oxide Field-Effect Devices and Their Deterministic Assembly on Foreign Substrates

Interfaces in {100} epitaxial heterostructures of perovskite oxides

Structural and dielectric properties of oxynitride perovskite LaTiOxNy thin films

Role of defect relaxation for trap-assisted tunneling in high-κthin films: A first-principles kinetic Monte Carlo study

Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces

Induced-charge electroosmotic flow around dielectric particles in uniform electric field

Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

Analysis of gate engineered asymmetric junctionless double gate MOSFET for varying operating conditions

Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies

Hafnium-Oxide 3-D Nanofilms via the Anodizing of Al/Hf Metal Layers

Flexible IGZO Schottky diodes on paper

High-throughput identification of higher- κ dielectrics from an amorphous N 2 -doped HfO 2 –TiO 2 library

Applications of Oxide Coatings in Photovoltaic Devices

Nucleation and crystal growth in HfO2 thin films by UV nanosecond pulsed laser annealing

Epitaxial integration of tetragonal BiFeO3 with silicon for nonvolatile memory applications

Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors

High-quality ZrO2/Si(001) thin films by a sol-gel process: Preparation and characterization

Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

Differences Between Charge Trapping States in Irradiated Nano-Crystalline HfO<formula formulatype="inline"><tex>$_{2}$</tex></formula> and Non-Crystalline Hf Silicates

Ultra-thin and Flat Mica as Gate Dielectric Layers

Hydrogen Barrier Layer Against Silicon Oxidation during Atomic Layer Deposition of Al[sub 2]O[sub 3] and HfO[sub 2]

Annealing effect on the formation of high-k dielectric in the W/ultrathin HfO2/Si-substrate system

Comparison of oxidized/nitrided Zr thin films on Si and SiC substrates

Electronic band structure of zirconia and hafnia polymorphs from theGWperspective

Growth temperature dependence of epitaxial Gd2O3 films on Si(111)

Nonvolatile Memory With Nitrogen-Stabilized Cubic-Phase $\hbox{ZrO}_{2}$ as Charge-Trapping Layer

Layer structure variations of ultra-thin HfO2 films induced by post-deposition annealing

LanthanideN,N-Dimethylaminodiboranates as a New Class of Highly Volatile Chemical Vapor Deposition Precursors

Phase transformations in oxides induced by swift heavy ions

Investigations on electrical characteristics and reliability properties of MOS capacitors using HfAlOx on n-GaAs substrates

Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix

Measurement of Dipoles/Roll-Off /Work Functions by Coupling CV and IPE and Study of Their Dependence on Fabrication Process

Cytotoxicity and physicochemical properties of hafnium oxide nanoparticles

Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

Improved interface properties of GaN metal-oxide-semiconductor device with non-polar plane and AlN passivation layer

Effects of anodisation parameters on thin film properties: a review

Study of the optoelectronic and piezoelectric properties of ZrO2 doped PVDF from quantum chemistry calculations

Thickness-dependent phase evolution and dielectric property of Hf0.5Zr0.5O2 thin films prepared with aqueous precursor

Revealing the Surface Reactivity of Zirconia by Periodic DFT Calculations

Defect calculations in semiconductors through a dielectric-dependent hybrid DFT functional: The case of oxygen vacancies in metal oxides

Lanthanide rare earth oxide thin film as an alternative gate oxide

Transport mechanisms of electrons and holes in dielectric films

Behavior of hydrogen in wide band gap oxides

Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y

Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

Two photon processes in ZnO quantum dots

Developments in High Temperature Corrosion and Protection of Materials

Influence of oxygen vacancies on the dielectric properties of hafnia: First-principles calculations

Hydrothermal Synthesis of Aqueous Sols of Nanocrystalline HfO2

Characterization of Ta-Ti Thin Films by using a Scanning Droplet Cell in Combination with AC Linear Sweep Voltammetry

Electrical Characteristics of Oxidized∕Nitrided Zr Thin Film on Si

High-k dielectrics for future generation memory devices (Invited Paper)

Interfacial structure of epitaxial SrTiO3on Si: experiments and simulations

Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

Improvement on low-temperature deposited HfO2 film and interfacial layer by high-pressure oxygen treatment

Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1−x high-κ dielectrics on Si

Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

Physics of Quantum Fluids

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Elastic Modulus of HfO2 Thin Film Grown by Atomic Layer Deposition with Wrinkle-based Measurement

Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics

Structural and band gaps studies of novel Al 2-x Hf x O 3 materials toward MOS applications

Model Surfaces Produced by Atomic Layer Deposition