The European Physical Journal Applied Physics (EPJ AP)

Effect of the Annealing Temperature of the Seed Layer on the Following Main Layer in Atomic‐Layer‐Deposited SrTiO 3 Thin Films

Sang Hyeon Kim, Woongkyu Lee, Cheol Hyun An, et al.
physica status solidi (RRL) – Rapid Research Letters 13 (5) 1800557 (2019)
DOI: 10.1002/pssr.201800557
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Time dependence of ethylene decomposition and byproducts formation in a continuous flow dielectric-packed plasma reactor

M. Sanjeeva Gandhi, Antony Ananth, Young Sun Mok, Jun-Ik Song and Kyu-Hyun Park
Chemosphere 91 (5) 685 (2013)
DOI: 10.1016/j.chemosphere.2013.01.060
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Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics

J. L. Everaert, E. Rosseel, J. Dekoster, et al.
Applied Physics Letters 96 (12) 122906 (2010)
DOI: 10.1063/1.3373920
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Investigating doping effects on high-κ metal gate stack for effective work function engineering

C. Leroux, S. Baudot, M. Charbonnier, et al.
Solid-State Electronics 88 21 (2013)
DOI: 10.1016/j.sse.2013.04.011
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Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications

Nelson Y. Garces, David J. Meyer, Virginia D. Wheeler, et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32 (3) 03D101 (2014)
DOI: 10.1116/1.4818254
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Evolutionary search for new high-kdielectric materials: methodology and applications to hafnia-based oxides

Qingfeng Zeng, Artem R. Oganov, Andriy O. Lyakhov, et al.
Acta Crystallographica Section C Structural Chemistry 70 (2) 76 (2014)
DOI: 10.1107/S2053229613027861
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Gallium Nitride Power Devices

Tianli Duan and Liu Zhihong
Gallium Nitride Power Devices 145 (2017)
DOI: 10.1201/9781315196626-7
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Mechanism of photocatalytic activities in Cr-doped SrTiO3 under visible-light irradiation: an insight from hybrid density-functional calculations

Pakpoom Reunchan, Naoto Umezawa, Shuxin Ouyang and Jinhua Ye
Physical Chemistry Chemical Physics 14 (6) 1876 (2012)
DOI: 10.1039/c2cp23348g
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Electronic structure of an oxygen vacancy in Al2O3 from the results of Ab Initio quantum-chemical calculations and photoluminescence experiments

V. A. Pustovarov, V. Sh. Aliev, T. V. Perevalov, V. A. Gritsenko and A. P. Eliseev
Journal of Experimental and Theoretical Physics 111 (6) 989 (2010)
DOI: 10.1134/S1063776110120113
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Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

S. Gieraltowska, L. Wachnicki, B.S. Witkowski, M. Godlewski and E. Guziewicz
Thin Solid Films 520 (14) 4694 (2012)
DOI: 10.1016/j.tsf.2011.10.151
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Interlevel transitions in core–shell nanodots with dielectric environment

E.C. Niculescu
Superlattices and Microstructures 51 (6) 814 (2012)
DOI: 10.1016/j.spmi.2012.03.025
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Defects and their passivation in high K gate oxides

K. Tse and J. Robertson
Microelectronic Engineering 84 (4) 663 (2007)
DOI: 10.1016/j.mee.2006.12.009
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Fabrication of Releasable Single-Crystal Silicon-Metal Oxide Field-Effect Devices and Their Deterministic Assembly on Foreign Substrates

Hyun-Joong Chung, Tae-il Kim, Hoon-Sik Kim, et al.
Advanced Functional Materials 21 (16) 3029 (2011)
DOI: 10.1002/adfm.201100124
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Interfaces in {100} epitaxial heterostructures of perovskite oxides

J.-L. Maurice, D. Imhoff, J.-P. Contour and C. Colliex
Philosophical Magazine 86 (15) 2127 (2006)
DOI: 10.1080/14786430600640460
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Structural and dielectric properties of oxynitride perovskite LaTiOxNy thin films

A. Ziani, C. Le Paven-Thivet, L. Le Gendre, et al.
Thin Solid Films 517 (2) 544 (2008)
DOI: 10.1016/j.tsf.2008.06.061
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Role of defect relaxation for trap-assisted tunneling in high-κthin films: A first-principles kinetic Monte Carlo study

Gunther Jegert, Dan Popescu, Paolo Lugli, et al.
Physical Review B 85 (4) 045303 (2012)
DOI: 10.1103/PhysRevB.85.045303
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Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces

Hyeon-Kyun Noh, Young Jun Oh and K.J. Chang
Physica B: Condensed Matter 407 (15) 2907 (2012)
DOI: 10.1016/j.physb.2011.08.079
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Induced-charge electroosmotic flow around dielectric particles in uniform electric field

Fang Zhang and Dongqing Li
Journal of Colloid and Interface Science 410 102 (2013)
DOI: 10.1016/j.jcis.2013.08.017
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Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

J. Charles Pravin, D. Nirmal, P. Prajoon and J. Ajayan
Physica E: Low-dimensional Systems and Nanostructures 83 95 (2016)
DOI: 10.1016/j.physe.2016.04.017
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Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies

Baikadi Pranay Kumar Reddy, Karri Babu Ravi Teja and Kavindra Kandpal
Semiconductors 52 (4) 420 (2018)
DOI: 10.1134/S1063782618040073
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Hafnium-Oxide 3-D Nanofilms via the Anodizing of Al/Hf Metal Layers

Alexander Mozalev, Maria Bendova, Francesc Gispert-Guirado and Eduard Llobet
Chemistry of Materials 30 (8) 2694 (2018)
DOI: 10.1021/acs.chemmater.8b00188
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Flexible IGZO Schottky diodes on paper

Jakub Kaczmarski, Michał A Borysiewicz, Krzysztof Piskorski, et al.
Semiconductor Science and Technology 33 (1) 015010 (2018)
DOI: 10.1088/1361-6641/aa9acb
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High-throughput identification of higher- κ dielectrics from an amorphous N 2 -doped HfO 2 –TiO 2 library

K.-S. Chang, W.-C. Lu, C.-Y. Wu and H.-C. Feng
Journal of Alloys and Compounds 615 386 (2014)
DOI: 10.1016/j.jallcom.2014.06.115
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Applications of Oxide Coatings in Photovoltaic Devices

Sonya Calnan
Coatings 4 (1) 162 (2014)
DOI: 10.3390/coatings4010162
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Nucleation and crystal growth in HfO2 thin films by UV nanosecond pulsed laser annealing

Toshiyuki Tabata
Applied Physics Express 13 (1) 015509 (2020)
DOI: 10.7567/1882-0786/ab5ce2
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Epitaxial integration of tetragonal BiFeO3 with silicon for nonvolatile memory applications

Jingbin Zhu, Zhigang Yin, Zhen Fu, et al.
Journal of Crystal Growth 459 178 (2017)
DOI: 10.1016/j.jcrysgro.2016.11.081
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Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors

Yuji Kiyota, Kenji Itaka, Yuta Iwashita, et al.
Japanese Journal of Applied Physics 50 (6) 06GH12 (2011)
DOI: 10.1143/JJAP.50.06GH12
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High-quality ZrO2/Si(001) thin films by a sol-gel process: Preparation and characterization

H. Döscher, G. Lilienkamp, P. Iskra, et al.
Journal of Applied Physics 107 (9) 094103 (2010)
DOI: 10.1063/1.3340830
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Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAIO3/SrTiO3 interface as a function of LaAIO3 growth conditions

J.-L. Maurice, G. Herranz, C. Colliex, et al.
EPL (Europhysics Letters) 82 (1) 17003 (2008)
DOI: 10.1209/0295-5075/82/17003
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Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

O. Engström, B. Raeissi, S. Hall, et al.
Solid-State Electronics 51 (4) 622 (2007)
DOI: 10.1016/j.sse.2007.02.021
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Differences Between Charge Trapping States in Irradiated Nano-Crystalline HfO<formula formulatype="inline"><tex>$_{2}$</tex></formula> and Non-Crystalline Hf Silicates

G. Lucovsky, D. M. Fleetwood, S. Lee, et al.
IEEE Transactions on Nuclear Science 53 (6) 3644 (2006)
DOI: 10.1109/TNS.2006.886211
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Ultra-thin and Flat Mica as Gate Dielectric Layers

Chong Guan Low and Qing Zhang
Small 8 (14) 2178 (2012)
DOI: 10.1002/smll.201200300
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Hydrogen Barrier Layer Against Silicon Oxidation during Atomic Layer Deposition of Al[sub 2]O[sub 3] and HfO[sub 2]

Martin M. Frank, Yu Wang, Ming-Tsung Ho, et al.
Journal of The Electrochemical Society 154 (2) G44 (2007)
DOI: 10.1149/1.2405839
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Annealing effect on the formation of high-k dielectric in the W/ultrathin HfO2/Si-substrate system

V. I. Rudakov, E. A. Bogoyavlenskaya and Yu. I. Denisenko
Technical Physics Letters 38 (11) 982 (2012)
DOI: 10.1134/S1063785012110120
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Comparison of oxidized/nitrided Zr thin films on Si and SiC substrates

Yew Hoong Wong and Kuan Yew Cheong
Ceramics International 39 S475 (2013)
DOI: 10.1016/j.ceramint.2012.10.117
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Electronic band structure of zirconia and hafnia polymorphs from theGWperspective

Hong Jiang, Ricardo I. Gomez-Abal, Patrick Rinke and Matthias Scheffler
Physical Review B 81 (8) 085119 (2010)
DOI: 10.1103/PhysRevB.81.085119
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Growth temperature dependence of epitaxial Gd2O3 films on Si(111)

G. Niu, B. Vilquin, N. Baboux, et al.
Microelectronic Engineering 86 (7-9) 1700 (2009)
DOI: 10.1016/j.mee.2009.03.107
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Nonvolatile Memory With Nitrogen-Stabilized Cubic-Phase $\hbox{ZrO}_{2}$ as Charge-Trapping Layer

Yung-Hsien Wu, Lun-Lun Chen, Jia-Rong Wu, et al.
IEEE Electron Device Letters 31 (9) 1008 (2010)
DOI: 10.1109/LED.2010.2055530
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Layer structure variations of ultra-thin HfO2 films induced by post-deposition annealing

Wei-En Fu and Yong-Qing Chang
Applied Surface Science 257 (17) 7436 (2011)
DOI: 10.1016/j.apsusc.2011.02.132
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LanthanideN,N-Dimethylaminodiboranates as a New Class of Highly Volatile Chemical Vapor Deposition Precursors

Scott R. Daly, Do Young Kim and Gregory S. Girolami
Inorganic Chemistry 51 (13) 7050 (2012)
DOI: 10.1021/ic201852j
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Phase transformations in oxides induced by swift heavy ions

A. Benyagoub
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 245 (1) 225 (2006)
DOI: 10.1016/j.nimb.2005.11.106
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Investigations on electrical characteristics and reliability properties of MOS capacitors using HfAlOx on n-GaAs substrates

P.S. Das and Abhijit Biswas
Microelectronics Reliability 52 (1) 112 (2012)
DOI: 10.1016/j.microrel.2011.08.005
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Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix

S R C Pinto, M Buljan, L Marques, et al.
Nanotechnology 23 (40) 405605 (2012)
DOI: 10.1088/0957-4484/23/40/405605
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Measurement of Dipoles/Roll-Off /Work Functions by Coupling CV and IPE and Study of Their Dependence on Fabrication Process

Matthieu Charbonnier, Charles Leroux, V. Cosnier, et al.
IEEE Transactions on Electron Devices 57 (8) 1809 (2010)
DOI: 10.1109/TED.2010.2050957
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Cytotoxicity and physicochemical properties of hafnium oxide nanoparticles

James A. Field, Antonia Luna-Velasco, Scott A. Boitano, et al.
Chemosphere 84 (10) 1401 (2011)
DOI: 10.1016/j.chemosphere.2011.04.067
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Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

D. Zade, S. Sato, K. Kakushima, et al.
Microelectronics Reliability 51 (4) 746 (2011)
DOI: 10.1016/j.microrel.2010.11.004
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Improved interface properties of GaN metal-oxide-semiconductor device with non-polar plane and AlN passivation layer

Xian Wu, Renrong Liang, Lei Guo, et al.
Applied Physics Letters 109 (23) 232101 (2016)
DOI: 10.1063/1.4971352
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Effects of anodisation parameters on thin film properties: a review

Y. H. Wong, M. G. Affendy, S. K. Lau, et al.
Materials Science and Technology 33 (6) 699 (2017)
DOI: 10.1080/02670836.2016.1193654
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Thickness-dependent phase evolution and dielectric property of Hf0.5Zr0.5O2 thin films prepared with aqueous precursor

Yong Yan, Dayu Zhou, Chunxia Guo, et al.
Journal of Sol-Gel Science and Technology 77 (2) 430 (2016)
DOI: 10.1007/s10971-015-3871-5
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Revealing the Surface Reactivity of Zirconia by Periodic DFT Calculations

Olga A. Syzgantseva, Monica Calatayud and Christian Minot
The Journal of Physical Chemistry C 116 (11) 6636 (2012)
DOI: 10.1021/jp209898q
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Defect calculations in semiconductors through a dielectric-dependent hybrid DFT functional: The case of oxygen vacancies in metal oxides

Matteo Gerosa, Carlo Enrico Bottani, Lucia Caramella, et al.
The Journal of Chemical Physics 143 (13) 134702 (2015)
DOI: 10.1063/1.4931805
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Lanthanide rare earth oxide thin film as an alternative gate oxide

Kian Heng Goh, A.S.M.A. Haseeb and Yew Hoong Wong
Materials Science in Semiconductor Processing 68 302 (2017)
DOI: 10.1016/j.mssp.2017.06.037
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Transport mechanisms of electrons and holes in dielectric films

K A Nasyrov and V A Gritsenko
Physics-Uspekhi 56 (10) 999 (2013)
DOI: 10.3367/UFNe.0183.201310h.1099
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Behavior of hydrogen in wide band gap oxides

K. Xiong, J. Robertson and S. J. Clark
Journal of Applied Physics 102 (8) 083710 (2007)
DOI: 10.1063/1.2798910
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Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

Qi Xie, Davy Deduytsche, Marc Schaekers, et al.
Applied Physics Letters 97 (11) 112905 (2010)
DOI: 10.1063/1.3490710
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Two photon processes in ZnO quantum dots

Deepti Maikhuri, S.P. Purohit and K.C. Mathur
Superlattices and Microstructures 89 296 (2016)
DOI: 10.1016/j.spmi.2015.11.017
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Developments in High Temperature Corrosion and Protection of Materials

Z. Li and W. Gao
Developments in High Temperature Corrosion and Protection of Materials 521 (2008)
DOI: 10.1533/9781845694258.3.521
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Influence of oxygen vacancies on the dielectric properties of hafnia: First-principles calculations

Eric Cockayne
Physical Review B 75 (9) 094103 (2007)
DOI: 10.1103/PhysRevB.75.094103
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Characterization of Ta-Ti Thin Films by using a Scanning Droplet Cell in Combination with AC Linear Sweep Voltammetry

Mu Fan, Kirill Sliozberg, Fabio La Mantia, et al.
ChemElectroChem 1 (5) 903 (2014)
DOI: 10.1002/celc.201300153
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Electrical Characteristics of Oxidized∕Nitrided Zr Thin Film on Si

Yew Hoong Wong and Kuan Yew Cheong
Journal of The Electrochemical Society 158 (12) H1270 (2011)
DOI: 10.1149/2.106112jes
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High-k dielectrics for future generation memory devices (Invited Paper)

J.A. Kittl, K. Opsomer, M. Popovici, et al.
Microelectronic Engineering 86 (7-9) 1789 (2009)
DOI: 10.1016/j.mee.2009.03.045
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Interfacial structure of epitaxial SrTiO3on Si: experiments and simulations

X F Wang, Juan Wang, Quan Li, et al.
Journal of Physics D: Applied Physics 42 (8) 085409 (2009)
DOI: 10.1088/0022-3727/42/8/085409
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Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

J. Yu, G. Chen, C.X. Li, et al.
Sensors and Actuators A: Physical 172 (1) 9 (2011)
DOI: 10.1016/j.sna.2011.02.021
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MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

S Abermann, G Pozzovivo, J Kuzmik, et al.
Semiconductor Science and Technology 22 (12) 1272 (2007)
DOI: 10.1088/0268-1242/22/12/005
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Improvement on low-temperature deposited HfO2 film and interfacial layer by high-pressure oxygen treatment

Po-Chun Yang, Ting-Chang Chang, Shih-Ching Chen, et al.
Solid-State Electronics 62 (1) 128 (2011)
DOI: 10.1016/j.sse.2011.03.012
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Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1−x high-κ dielectrics on Si

B. B. Triplett, P. T. Chen, Y. Nishi, et al.
Journal of Applied Physics 101 (1) 013703 (2007)
DOI: 10.1063/1.2402974
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Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

Yung-Shao Shen, Kuen-Yi Chen, Po-Chun Chen, Teng-Chuan Chen and Yung-Hsien Wu
Scientific Reports 7 (1) 43659 (2017)
DOI: 10.1038/srep43659
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Physics of Quantum Fluids

Jacques Levrat, Georg Rossbach, Raphaël Butté and Nicolas Grandjean
Springer Series in Solid-State Sciences, Physics of Quantum Fluids 177 201 (2013)
DOI: 10.1007/978-3-642-37569-9_10
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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

B. Raeissi, J. Piscator, O. Engström, et al.
Solid-State Electronics 52 (9) 1274 (2008)
DOI: 10.1016/j.sse.2008.04.005
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Elastic Modulus of HfO2 Thin Film Grown by Atomic Layer Deposition with Wrinkle-based Measurement

Hyun-Ju Choi and Yongseong Kim
Bulletin of the Korean Chemical Society 38 (10) 1246 (2017)
DOI: 10.1002/bkcs.11251
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Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics

Kalya Shubhakar, Kin Leong Pey, Nagarajan Raghavan, et al.
Microelectronic Engineering 109 364 (2013)
DOI: 10.1016/j.mee.2013.03.021
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Structural and band gaps studies of novel Al 2-x Hf x O 3 materials toward MOS applications

Norlida Kamarulzaman, Annie Maria Mahat, Nurhanna Badar and Cezhou Zhao
Materials Chemistry and Physics (2018)
DOI: 10.1016/j.matchemphys.2018.03.024
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Model Surfaces Produced by Atomic Layer Deposition

Rick B. Walsh, Shaun C. Howard, Andrew Nelson, et al.
Chemistry Letters 41 (10) 1247 (2012)
DOI: 10.1246/cl.2012.1247
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On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs

Muhammad Nawaz
Active and Passive Electronic Components 2015 1 (2015)
DOI: 10.1155/2015/651527
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Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression

Cheng-Yi Chang, Fu-Ming Pan, Jian-Siang Lin, et al.
Journal of Applied Physics 120 (23) 234501 (2016)
DOI: 10.1063/1.4972029
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How morphology determines the charge storage properties of Ge nanocrystals in HfO 2

A. Slav, C. Palade, A.M. Lepadatu, et al.
Scripta Materialia 113 135 (2016)
DOI: 10.1016/j.scriptamat.2015.10.028
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Outlook and Challenges of Nano Devices, Sensors, and MEMS

Ling-Xuan Qian
Outlook and Challenges of Nano Devices, Sensors, and MEMS 3 (2017)
DOI: 10.1007/978-3-319-50824-5_1
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Frequency dispersion and dielectric relaxation in postdeposition annealed high-κ erbium oxide metal–oxide–semiconductor capacitors

Robin Khosla and Satinder K. Sharma
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 (1) 012201 (2018)
DOI: 10.1116/1.4995809
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Surface morphology of epitaxial lattice-matched Ba0.7Sr0.3O on Si(001) and vicinal Si(001)-4°[110] substrates

J. Zachariae and H. Pfnür
Surface Science 600 (13) 2785 (2006)
DOI: 10.1016/j.susc.2006.05.002
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High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

Daniel J. Lichtenwalner, Lin Cheng, Sarit Dhar, Anant Agarwal and John W. Palmour
Applied Physics Letters 105 (18) 182107 (2014)
DOI: 10.1063/1.4901259
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Study of the optoelectronic and piezoelectric properties of ZrO2 doped PVDF from quantum chemistry calculations

Albert Veved, Geh Wilson Ejuh and Noël Djongyang
Chinese Journal of Physics 63 213 (2020)
DOI: 10.1016/j.cjph.2019.10.022
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Technological Innovation for Value Creation

Qian Chen, Henrique L. Gomes, Asal Kiazadeh, et al.
IFIP Advances in Information and Communication Technology, Technological Innovation for Value Creation 372 527 (2012)
DOI: 10.1007/978-3-642-28255-3_58
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Study on the dielectric properties of Al 2 O 3 /TiO 2 sub-nanometric laminates: effect of the bottom electrode and the total thickness

M Ben Elbahri, A Kahouli, B Mercey, et al.
Journal of Physics D: Applied Physics 51 (6) 065101 (2018)
DOI: 10.1088/1361-6463/aaa4df
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Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric

Zhi-Peng Ling, Jun-Tao Zhu, Xinke Liu and Kah-Wee Ang
Scientific Reports 6 (1) 26609 (2016)
DOI: 10.1038/srep26609
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The Structure and Characterization of ZrO2Thin Films Prepared by Liquid Delivery-MOCVD

Rui Li, Dan Xie, Mingming Zhang, et al.
Ferroelectrics 407 (1) 140 (2010)
DOI: 10.1080/00150193.2010.484760
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Influence of annealing temperatures on solution-processed AlInZnO thin film transistors

Yana Gao, Jianguo Lu, Jianhua Zhang and Xifeng Li
Journal of Alloys and Compounds 646 675 (2015)
DOI: 10.1016/j.jallcom.2015.06.049
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Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

Riikka L. Puurunen
Journal of Applied Physics 97 (12) 121301 (2005)
DOI: 10.1063/1.1940727
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High performance organic nonvolatile memory transistors based on HfO2 and poly(α-methylstyrene) electret hybrid charge-trapping layers

W. C. Xu, H. X. He, X. S. Jing, et al.
Applied Physics Letters 111 (6) 063302 (2017)
DOI: 10.1063/1.4997748
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Variable RF capacitor based on a-Si:H (P-doped) multi-length cantilevers

Y Q Fu, S B Milne, J K Luo, et al.
Journal of Physics: Conference Series 34 788 (2006)
DOI: 10.1088/1742-6596/34/1/130
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Localized breakdown in dielectrics and macroscopic charge transport through the whole gate stack: A comparative study

Yi Zheng, Andrew T. S. Wee, Yi Ching Ong, et al.
Applied Physics Letters 92 (1) 012914 (2008)
DOI: 10.1063/1.2830814
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Ethynyl-linked push–pull porphyrin hetero-dimers for near-IR dye-sensitized solar cells: photovoltaic performances versus excited-state dynamics

Yizhu Liu, Hong Lin, Jianbao Li, et al.
Physical Chemistry Chemical Physics 14 (48) 16703 (2012)
DOI: 10.1039/c2cp43165c
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High dielectric constant gate oxides for metal oxide Si transistors

John Robertson
Reports on Progress in Physics 69 (2) 327 (2006)
DOI: 10.1088/0034-4885/69/2/R02
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Thermal stability of HfTaON films prepared by physical vapor deposition

Xu Gaobo and Xu Qiuxia
Journal of Semiconductors 30 (2) 023002 (2009)
DOI: 10.1088/1674-4926/30/2/023002
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Measuring Dipole Inversion in Self-Assembled Nano-Dielectric Molecular Layers

Li Zeng, Riccardo Turrisi, Bo Fu, et al.
ACS Applied Materials & Interfaces 10 (7) 6484 (2018)
DOI: 10.1021/acsami.7b16160
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Composition and structure of hafnia films on silicon

T. P. Smirnova, V. V. Kaichev, L. V. Yakovkina, et al.
Inorganic Materials 44 (9) 965 (2008)
DOI: 10.1134/S0020168508090124
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Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide

A. Fissel, M. Czernohorsky and H. J. Osten
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 24 (4) 2115 (2006)
DOI: 10.1116/1.2214702
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Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

Erick Garcia-Cordero, Francesco Bellando, Junrui Zhang, et al.
ACS Nano 12 (12) 12646 (2018)
DOI: 10.1021/acsnano.8b07413
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Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors

Bhola N. Pal, Bal Mukund Dhar, Kevin C. See and Howard E. Katz
Nature Materials 8 (11) 898 (2009)
DOI: 10.1038/nmat2560
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Toward Quantum FinFET

Arif Khan, Saeed Ganji and S. Noor Mohammad
Lecture Notes in Nanoscale Science and Technology, Toward Quantum FinFET 17 25 (2013)
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Plasma-Enhanced Methane Direct Conversion over Particle-Size Adjusted MOx/Al2O3 (M = Ti and Mg) Catalysts

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Solid-Phase Epitaxy of Perovskite High Dielectric PrAlO3 Films Grown by Atomic Layer Deposition for Use in Two-Dimensional Electronics and Memory Devices

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Composite Polymer Electrolytes with Li7La3Zr2O12 Garnet-Type Nanowires as Ceramic Fillers: Mechanism of Conductivity Enhancement and Role of Doping and Morphology

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Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics

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Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates

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Enhanced Electroresponse of Alkaline Earth Metal-Doped Silica/Titania Spheres by Synergetic Effect of Dispersion Stability and Dielectric Property

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Phthalocyanine-Based Organic Thin-Film Transistors: A Review of Recent Advances

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Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET

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Handbook of Manufacturing Engineering and Technology

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Aqueous Combustion Synthesis of Aluminum Oxide Thin Films and Application as Gate Dielectric in GZTO Solution-Based TFTs

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A Comparative Study of Nano-SiO2 and Nano-TiO2 Fillers on Proton Conductivity and Dielectric Response of a Silicotungstic Acid–H3PO4–Poly(vinyl alcohol) Polymer Electrolyte

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High-Performance Single-Electron Transistor Based on Metal–Organic Complex of Thiophene: First Principle Study

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A Cost-Effective $\hbox{Ni/Nb}_{2}\hbox{O}_{5}\hbox{/} \hbox{Al}_{2}\hbox{O}_{3}\hbox{/}\hbox{Ni}_{2}\hbox{Si}$ Metal–Insulator–Metal Capacitor Processed at 300 $^{\circ}\hbox{C}$ Using Laser Annealing and a Fully Silicided Amorphous Silicon Bottom Electrode

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Ge nanocrystals with highly uniform size distribution deposited on alumina at room temperature by pulsed laser deposition: structural, morphological, and charge trapping properties

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Probing Semiconductor/Insulator Heterostructures Through Electron Spin Resonance of Point Defects: Interfaces, Interlayers, and Stress

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Protons in Oxysulfides, Oxysulfates, and Sulfides: A First-Principles Study of La2O2S, La2O2SO4, SrZrS3, and BaZrS3

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Electrical Properties of Ge pMOSFETs With Ultrathin EOT HfO₂/AlOₓ/GeOₓ Gate-Stacks and NiGe Metal Source/Drain

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Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric

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An approach to enhance memory retention capacity in MFIS structures using different insulating buffer layer

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Transmission line pulse (TLP) as integrative method for the investigation of ultra-fast trapping mechanisms on high-k MIM

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Ultra-thin hafnium oxide coatings grown by atomic layer deposition: hydrophobicity/hydrophilicity over time

R J Martín-Palma and Carlo G Pantano
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Atomistic simulations of displacement cascades in Y2O3 single crystal

Manan Dholakia, Sharat Chandra, M.C. Valsakumar and S. Mathi Jaya
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Hydrolysis of ZrCl4and HfCl4: The Initial Steps in the High-Temperature Oxidation of Metal Chlorides to Produce ZrO2and HfO2

Zongtang Fang and David A. Dixon
The Journal of Physical Chemistry C 117 (15) 7459 (2013)
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Junctionless Tunnel Field Effect Transistor

Bahniman Ghosh and Mohammad Waseem Akram
IEEE Electron Device Letters 34 (5) 584 (2013)
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A Dual-Gate Graphene FET Model for Circuit Simulation—SPICE Implementation

Ime J. Umoh, Tom J. Kazmierski and Bashir M. Al-Hashimi
IEEE Transactions on Nanotechnology 12 (3) 427 (2013)
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Novel Photo-Defined Polymer-Enhanced Through-Silicon Vias for Silicon Interposers

Paragkumar A. Thadesar and Muhannad S. Bakir
IEEE Transactions on Components, Packaging and Manufacturing Technology 3 (7) 1130 (2013)
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Effect of Space Radiation on the Leakage Current of MEMS Insulators

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IEEE Transactions on Nuclear Science 60 (4) 3074 (2013)
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Electromagnetic Performance of RF NEMS Graphene Capacitive Switches

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IEEE Transactions on Nanotechnology 13 (1) 70 (2014)
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Improved Performance of Amorphous InGaZnO Thin-Film Transistor With $\hbox{Ta}_{2}\hbox{O}_{5}$ Gate Dielectric by Using La Incorporation

L. X. Qian, X. Z. Liu, C. Y. Han and P. T. Lai
IEEE Transactions on Device and Materials Reliability 14 (4) 1056 (2014)
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Impact of Uniaxial Strain on Random Telegraph Noise in High- $k$ /Metal Gate pMOSFETs

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IEEE Transactions on Electron Devices 62 (3) 988 (2015)
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Intersublevel Photoabsorption and Photoelectric Processes in ZnO Quantum Dot Embedded in $\hbox{HfO}_{2}$ and AlN Matrices

D. Maikhuri, S. P. Purohit and K. C. Mathur
IEEE Photonics Journal 6 (5) 1 (2014)
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A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

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Biodegradable Junctionless Transistors With Extremely Simple Structure

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Memristive and CMOS Devices for Neuromorphic Computing

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Applied Physics Letters 103 (2) 023113 (2013)
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Characterizing the Charge Trapping across Crystalline and Amorphous Si/SiO 2 /HfO 2 Stacks from First-Principle Calculations

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Study of molar ratio on the characteristics of metal–organic decomposed LaxCe1−xOz film as a metal reactive oxide on Si substrate

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Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC

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Electron beam induced local crystallization of HfO2 nanopores for biosensing applications

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Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors

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Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier

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Improvement of the electro-optical properties of nematic liquid crystals doped with strontium titanate nanoparticles at various doping concentrations

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Germanium Based Field-Effect Transistors: Challenges and Opportunities

Patrick Goley and Mantu Hudait
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Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process

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Bolong Huang
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Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30 (1) 01A130 (2012)
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Improving the ALD-grown Y 2 O 3 /Ge interface quality by surface and annealing treatments

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Applied Surface Science 369 377 (2016)
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Structural and Electrical Properties of Ta ax La(1−a)x O y Thin Films

Zahra Khorshidi, Ali Bahari and Reza Gholipur
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A novel particle separation method based on induced-charge electro-osmotic flow and polarizability of dielectric particles

Fang Zhang and Dongqing Li
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Electrical and optical properties of nanocrystalline yttrium-doped hafnium oxide thin films

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Local Dielectric Property of Cubic, Tetragonal, and Monoclinic Hafnium Oxides

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Japanese Journal of Applied Physics 51 (3R) 031101 (2012)
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Estimation of step-by-step induced stress in a sequential process integration of nano-scale SOS MOSFETs with high-kgate dielectrics

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A high performance HfSiON/TaN NMOSFET fabricated using a gate-last process

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Lanthanum-Zirconate and Lanthanum-Aluminate Based High-κ Dielectric Stacks on Silicon Substrates

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Electronic Properties of Atomic-Layer-Deposited Al[sub 2]O[sub 3]/Thermal-Nitrided SiO[sub 2] Stacking Dielectric on 4H SiC

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Electronic structure of aluminum oxide: ab initio simulations ofαandγphases and comparison with experiment for amorphous films

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The role of silicon alloying addition on the pitting corrosion resistance of an Al-12wt.%Si alloy

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Comparative electron spin resonance study of epi-Lu2O3/(111)Si and a-Lu2O3/(100)Si interfaces: Misfit point defects

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (2) 021509 (2013)
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Ab initio simulation of the electronic structure of δ-Ta2O5 with oxygen vacancy and comparison with experiment

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M. W. Akram, Bahniman Ghosh, Punyasloka Bal and Partha Mondal
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UV-protection properties of electrospun polyacrylonitrile nanofibrous mats embedded with MgO and Al2O3 nanoparticles

Saeed Dadvar, Hossein Tavanai and Mohammad Morshed
Journal of Nanoparticle Research 13 (10) 5163 (2011)
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A study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator

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Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers

Chien-Wei Lee and Jenn-Gwo Hwu
AIP Advances 3 (10) 102123 (2013)
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Insulator–metal transition of VO2ultrathin films on silicon: evidence for an electronic origin by infrared spectroscopy

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Journal of Physics: Condensed Matter 25 (44) 445402 (2013)
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BaTiO3Integration with Nanostructured Epitaxial (100), (110), and (111) Germanium for Multifunctional Devices

Mantu K. Hudait, Yan Zhu, Nikhil Jain, et al.
ACS Applied Materials & Interfaces 5 (21) 11446 (2013)
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Defect passivation in HfO2 gate oxide by fluorine

K. Tse and J. Robertson
Applied Physics Letters 89 (14) 142914 (2006)
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Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors

Christophe Avis, Youn Goo Kim and Jin Jang
Journal of Materials Chemistry 22 (34) 17415 (2012)
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Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction

A. Proessdorf, M. Niehle, M. Hanke, et al.
Applied Physics Letters 105 (2) 021601 (2014)
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ALD deposited ZrO2 ultrathin layers on Si and Ge substrates: A multiple technique characterization

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Microelectronic Engineering 112 208 (2013)
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Development of hafnium based high-k materials—A review

J.H. Choi, Y. Mao and J.P. Chang
Materials Science and Engineering: R: Reports 72 (6) 97 (2011)
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First-principles study of Zintl aluminide SrAl2

Alexander Slepko and Alexander A. Demkov
Physical Review B 85 (19) (2012)
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Electro-optical modulation of a silicon waveguide with an “epsilon-near-zero” material

Alok P. Vasudev, Ju-Hyung Kang, Junghyun Park, Xiaoge Liu and Mark L. Brongersma
Optics Express 21 (22) 26387 (2013)
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Defect states in the high-dielectric-constant gate oxide LaAlO3

K. Xiong, J. Robertson and S. J. Clark
Applied Physics Letters 89 (2) 022907 (2006)
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Review on one-dimensional nanostructures prepared by electrospinning and atomic layer deposition

Imre Miklós Szilágyi and Dávidné Nagy
Journal of Physics: Conference Series 559 012010 (2014)
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Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction

M. Kuzmin, P. Laukkanen, M. Yasir, et al.
Physical Review B 92 (16) (2015)
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Thin Films of High-kOxides and ZnO for Transparent Electronic Devices

Sylwia Gieraltowska, Lukasz Wachnicki, Bartlomiej S. Witkowski, Elzbieta Guziewicz and Marek Godlewski
Chemical Vapor Deposition 19 (4-6) 213 (2013)
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Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application

Rajeswar Panja, Sourav Roy, Debanjan Jana and Siddheswar Maikap
Nanoscale Research Letters 9 (1) 692 (2014)
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Electronic properties of the Zr–ZrO2–SiO2–Si(100) gate stack structure

C. C. Fulton, G. Lucovsky and R. J. Nemanich
Journal of Applied Physics 99 (6) 063708 (2006)
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La2O3 Nano powders by mixture of fuels approach through chemical combustion for dielectric studies

G Nithesh Sharma, K Venkateswara Rao, V Sesha Sai Kumar, et al.
IOP Conference Series: Materials Science and Engineering 73 012099 (2015)
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Electrical and reliability characteristics of polycrystalline silicon thin-film transistors with high-κ Eu2O3 gate dielectrics

Li-Chen Yen, Chia-Wei Hu, Tsung-Yu Chiang, Tien-Sheng Chao and Tung-Ming Pan
Applied Physics Letters 100 (17) 173509 (2012)
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Nanoscale investigations: Surface potential of rare-earth oxide (Re2O3) thin films by kelvin probe force microscopy for next generation CMOS technology

Pawan Kumar, Robin Khosla and Satinder K. Sharma
Surfaces and Interfaces 4 69 (2016)
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Ink-Jet-Printed Organic Thin-Film Transistors for Low-Voltage-Driven CMOS Circuits With Solution-Processed AlO_X Gate Insulator

Sung Hoon Kim, Sun Hee Lee, Youn Goo Kim and Jin Jang
IEEE Electron Device Letters 34 (2) 307 (2013)
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High dielectric material dependence of carbon nanotube field effect transistor considering non-ballistic conduction

Nirjhor Tahmidur Rouf, Ashfaqul Haq Deep, Mahmudul Hasan, et al.
Micro & Nano Letters 9 (10) 620 (2014)
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Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers

V. V. Afanas’ev, A. Stesmans, G. Mavrou and A. Dimoulas
Applied Physics Letters 93 (10) 102115 (2008)
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Phase transition in sputtered HfO2 thin films: A qualitative Raman study

G.S. Belo, F. Nakagomi, A. Minko, et al.
Applied Surface Science 261 727 (2012)
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First-principles calculations of electronic and optical properties of Mn-doped cubic HfO2

Yu-Fen Zhang, Hao Ren, Zhi-Tao Hou, Cheng Wang and Shuai Zhao
Journal of Alloys and Compounds 609 107 (2014)
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The initial atomic layer deposition of HfO2∕Si(001) as followed in situ by synchrotron radiation photoelectron spectroscopy

Massimo Tallarida, Konstantin Karavaev and Dieter Schmeisser
Journal of Applied Physics 104 (6) 064116 (2008)
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From amorphous phase separations to nanostructured materials in sol–gel derived ZrO2:Eu3+/SiO2 and ZnO/SiO2 composites

A. Gaudon, F. Lallet, A. Boulle, et al.
Journal of Non-Crystalline Solids 352 (21-22) 2152 (2006)
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Electron spin resonance observation of an interfacial GePb1-type defect in SiO2/(100)Si1−xGex/SiO2/Si heterostructures

A Stesmans, P Somers and V V Afanas’ev
Journal of Physics: Condensed Matter 21 (12) 122201 (2009)
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Electronic structure of bulk and defect α- and γ-Al2O3

T.V. Perevalov, A.V. Shaposhnikov and V.A. Gritsenko
Microelectronic Engineering 86 (7-9) 1915 (2009)
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Band alignment of atomic layer deposited (ZrO2)x(SiO2)1−x gate dielectrics on Si (100)

Dahlang Tahir, Eun Kyoung Lee, Suhk Kun Oh, et al.
Applied Physics Letters 94 (21) 212902 (2009)
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Characterization of Semiconductor Heterostructures and Nanostructures

Andre Stesmans and Valery V. Afanas'ev
Characterization of Semiconductor Heterostructures and Nanostructures 435 (2008)
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Bilayer Organic–Inorganic Gate Dielectrics for High-Performance, Low-Voltage, Single-Walled Carbon Nanotube Thin-Film Transistors, Complementary Logic Gates, and p–n Diodes on Plastic Substrates

Q. Cao, M.-G. Xia, M. Shim and J. A. Rogers
Advanced Functional Materials 16 (18) 2355 (2006)
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Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures

Srikant Jayanti, Xiangyu Yang, Daniel J. Lichtenwalner and Veena Misra
Applied Physics Letters 96 (9) 092905 (2010)
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DIELECTRIC AND INTERFACE STABILITY OF LaSmO3 FILMS

WEITAO SU, QIUHUI ZHUANG, DEXUAN HUO and BIN LI
Surface Review and Letters 19 (06) 1250064 (2012)
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Thermal stability of thin ZrO2 films prepared by a sol-gel process on Si(001) substrates

H. Döscher, G. Lilienkamp, P. Iskra, M. Kazempoor and W. Daum
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28 (4) C5B5 (2010)
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AmorphousHfO2andHf1−xSixOvia a melt-and-quench scheme usingab initiomolecular dynamics

Wanderlã L. Scopel, Antônio J. R. da Silva and A. Fazzio
Physical Review B 77 (17) 172101 (2008)
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Remote phonon scattering in field-effect transistors with a high κ insulating layer

B. Laikhtman and P. M. Solomon
Journal of Applied Physics 103 (1) 014501 (2008)
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Floating Gate Memory with Biomineralized Nanodots Embedded in High-kGate Dielectric

Kosuke Ohara, Ichiro Yamashita, Toshitake Yaegashi, et al.
Applied Physics Express 2 (9) 095001 (2009)
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Investigation of forming-gas annealed CeO2 thin film on GaN

Hock Jin Quah, Kuan Yew Cheong, Zainuriah Hassan and Zainovia Lockman
Journal of Materials Science: Materials in Electronics 22 (6) 583 (2011)
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Organic Optoelectronics

Chengliang Wang, Lang Jiang and Wenping Hu
Organic Optoelectronics 95 (2013)
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Thickness dependence of the structural and dielectric properties of epitaxial ZrO2films grown by limited reaction sputtering

Y Zhou, K Sasaki, T Kawae and A Morimoto
Journal of Physics D: Applied Physics 42 (20) 205406 (2009)
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Electrical, Structural and Interfacial Characterization of HfO2Films on Si Substrates

Ting-Ting Tan, Zheng-Tang Liu and Yan-Yan Li
Chinese Physics Letters 28 (8) 086803 (2011)
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Hafnia-Silica Cryogels: Solvent-Assisted Textural and Catalytic Control in the Citronellal Cyclization

Ciril Jimeno, Jonathan Miras and Jordi Esquena
ChemCatChem 6 (9) 2626 (2014)
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Low-Operating-Voltage Pentacene-Based Transistors and Inverters With Solution-Processed Barium Zirconate Titanate Insulators

Chia-Yu Wei, Wen-Chieh Huang, Chih-Kai Yang, Yen-Yu Chang and Yeong-Her Wang
IEEE Electron Device Letters 32 (12) 1755 (2011)
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Study on a Metal–Insulator–Silicon Hydrogen Sensor With LaTiON as Gate Insulator

Jerry Yu, Gang Chen and Pui To Lai
IEEE Sensors Journal 13 (5) 1534 (2013)
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Electrochemical and passive characterization of a beta type Ti45Zr38Al17 cast rod in nitric acid medium

J. Jayaraj, A. Ravi Shankar and U. Kamachi Mudali
Electrochimica Acta 85 210 (2012)
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A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs

Sofia Johansson, Martin Berg, Karl-Magnus Persson and Erik Lind
IEEE Transactions on Electron Devices 60 (2) 776 (2013)
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High-mobility BaSnO3thin-film transistor with HfO2gate insulator

Young Mo Kim, Chulkwon Park, Useong Kim, Chanjong Ju and Kookrin Char
Applied Physics Express 9 (1) 011201 (2016)
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Organic Macromolecular High Dielectric Constant Materials: Synthesis, Characterization, and Applications

Meng Guo, Teruaki Hayakawa, Masa-aki Kakimoto and Theodore Goodson
The Journal of Physical Chemistry B 115 (46) 13419 (2011)
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Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness

Minhyeok Choe, Gunho Jo, Jongsun Maeng, et al.
Journal of Applied Physics 107 (3) 034504 (2010)
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Investigations on high-κ dielectrics for low threshold voltage and low leakage zinc oxide thin-film transistor, using material selection methodologies

Kavindra Kandpal and Navneet Gupta
Journal of Materials Science: Materials in Electronics 27 (6) 5972 (2016)
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Preparation and properties of BaTiO3/porous oxide composites

V. V. Sydorchuk, S. V. Khalameida, V. P. Klimenko, V. A. Mikheev and V. A. Zazhigalov
Inorganic Materials 48 (9) 925 (2012)
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Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications

Yogesh Goswami, Pranav Asthana and Bahniman Ghosh
Journal of Semiconductors 38 (5) 054002 (2017)
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Field-effect induced tunability in hyperbolic metamaterials

Georgia T. Papadakis and Harry A. Atwater
Physical Review B 92 (18) (2015)
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Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

Dominik Martin, Johannes Müller, Tony Schenk, et al.
Advanced Materials 26 (48) 8198 (2014)
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Method for disclosing invisible physical properties in metal−ferroelectric−insulator−semiconductor gate stacks

Shigeki Sakai, Wei Zhang and Mitsue Takahashi
Journal of Physics D: Applied Physics 50 (16) 165107 (2017)
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Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

Wei-En Fu, Chia-Wei Chang, Yong-Qing Chang, Chih-Kai Yao and Jiunn-Der Liao
Applied Surface Science 258 (22) 8974 (2012)
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Trap-assisted tunneling, capacitance–voltage characteristics, and surface properties of Sm2O3 thin film on Si substrate

Kian Heng Goh, A. S. M. A. Haseeb and Yew Hoong Wong
Journal of Materials Science: Materials in Electronics 28 (6) 4725 (2017)
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Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack

Mengmeng YANG, Hailing TU, Jun DU, et al.
Journal of Rare Earths 31 (4) 395 (2013)
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Atomic structure and thermally induced transformation of the crystalline BaO/Si(100) junction

M. Kuzmin, P. Laukkanen, M. P. J. Punkkinen, et al.
Physical Review B 90 (23) (2014)
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Energy band alignment at the nanoscale

Jonas Deuermeier, Elvira Fortunato, Rodrigo Martins and Andreas Klein
Applied Physics Letters 110 (5) 051603 (2017)
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Model approach to solving the inverse problem of X-ray reflectometry and its application to the study of the internal structure of hafnium oxide films

Yu. O. Volkov, I. V. Kozhevnikov, B. S. Roshchin, E. O. Filatova and V. E. Asadchikov
Crystallography Reports 58 (1) 160 (2013)
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A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices

Niladri Pratap Maity, Reshmi Maity, R.K. Thapa and Srimanta Baishya
Superlattices and Microstructures 95 24 (2016)
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Quantum-confined nanowires as vehicles for enhanced electrical transport

S Noor Mohammad
Nanotechnology 23 (28) 285707 (2012)
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Structural and optical characterization of Cr2O3 nanostructures: Evaluation of its dielectric properties

M. M. Abdullah, Fahd M. Rajab and Saleh M. Al-Abbas
AIP Advances 4 (2) 027121 (2014)
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Floating Gate Memory With Biomineralized Nanodots Embedded in $\hbox{HfO}_{2}$

Kosuke Ohara, Yosuke Tojo, Ichiro Yamashita, et al.
IEEE Transactions on Nanotechnology 10 (3) 576 (2011)
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Enhanced Capacitance of Composite Anodic ZrO2Films Comprising High Permittivity Oxide Nanocrystals and Highly Resistive Amorphous Oxide Matrix

Hiroki Habazaki, Shun Koyama, Yoshitaka Aoki, Norihito Sakaguchi and Shinji Nagata
ACS Applied Materials & Interfaces 3 (7) 2665 (2011)
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Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon

Yi Zhao, Masahiro Toyama, Koji Kita, Kentaro Kyuno and Akira Toriumi
Applied Physics Letters 88 (7) 072904 (2006)
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Platinum-assisted post deposition annealing of the n-Ge/Y2O3interface

C Zimmermann, O Bethge, B Lutzer and E Bertagnolli
Semiconductor Science and Technology 31 (7) 075009 (2016)
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HfO[sub 2]∕Si interface formation in atomic layer deposition films: An in situ investigation

Massimo Tallarida, Konstantin Karavaev and Dieter Schmeisser
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27 (1) 300 (2009)
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Study of Si kinetics in interfacial SiO2scavenging in HfO2gate stacks

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura and Akira Toriumi
Applied Physics Express 8 (6) 061304 (2015)
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An integrated high temperature environmental cell for atom probe tomography studies of gas-surface reactions: Instrumentation and results

S. Dumpala, S.R. Broderick, P.A.J. Bagot and K. Rajan
Ultramicroscopy 141 16 (2014)
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Designing graphene absorption in a multispectral plasmon-enhanced infrared detector

Michael D. Goldflam, Zhe Fei, Isaac Ruiz, et al.
Optics Express 25 (11) 12400 (2017)
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High-k Gate Dielectrics for CMOS Technology

Shijie Wang, Yuanping Feng and Alfred C. H. Huan
High-k Gate Dielectrics for CMOS Technology 293 (2012)
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Physical and electrical characterization of atomic-layer-deposited Ru nanocrystals embedded into Al2O3 for memory applications

Min Zhang, Wei Chen, Shi-Jin Ding, et al.
Journal of Physics D: Applied Physics 41 (3) 032007 (2008)
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Reliability of La-Doped Hf-Based Dielectrics nMOSFETs

Chang Yong Kang, P.D. Kirsch, Byoung Hun Lee, Hsing-Huang Tseng and R. Jammy
IEEE Transactions on Device and Materials Reliability 9 (2) 171 (2009)
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Probing defects at interfaces and interlayers of low-dimensional Si/insulator (HfO2; LaAlO3) structures by electron spin resonance

A. Stesmans and V.V. Afanas’ev
Physica B: Condensed Matter 401-402 550 (2007)
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Internal Photoemission Spectroscopy

Valery V. Afanas’ev
Internal Photoemission Spectroscopy 255 (2014)
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Determining the Optimized Layer-by-Layer Film Architecture With Dendrimer/Carbon Nanotubes for Field-Effect Sensors

Marcos A. M. Sousa, Jose R. Siqueira, Andres Vercik, Michael J Schoning and Osvaldo N. Oliveira
IEEE Sensors Journal 17 (6) 1735 (2017)
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LCAO Calculations of (001) Surface Oxygen Vacancy Structure in Y-Doped BaZrO3

A. V. Bandura, R. A. Evarestov and D. D. Kuruch
Integrated Ferroelectrics 123 (1) 1 (2011)
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Atomic and electronic structure of gadolinium oxide

Timofey Viktorovich Perevalov, Andrey Evgenievich Dolbak, Vasilii Aleksandrovich Shvets, et al.
The European Physical Journal Applied Physics 65 (1) 10702 (2014)
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Simulation of Graphene Base Transistors With Bilayer Tunnel Oxide Barrier: Model Calibration and Performance Projection

Valerio Di Lecce, Antonio Gnudi, Elena Gnani, Susanna Reggiani and Giorgio Baccarani
IEEE Electron Device Letters 37 (11) 1489 (2016)
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Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- application

A. Fissel, M. Czernohorsky and H.J. Osten
Superlattices and Microstructures 40 (4-6) 551 (2006)
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Superiority of DFT+U with non-linear core correction for open-shell binary rare-earth metal oxides: a case study of native point defects in cerium oxides

Bolong Huang
Philosophical Magazine 94 (26) 3052 (2014)
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Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties

Shankar Swaminathan, Yun Sun, Piero Pianetta and Paul C. McIntyre
Journal of Applied Physics 110 (9) 094105 (2011)
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Characterization of Semiconductor Heterostructures and Nanostructures

Andre Stesmans and Valery V. Afanas’ev
Characterization of Semiconductor Heterostructures and Nanostructures 685 (2013)
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Band Alignment at Molybdenum Disulphide/Boron Nitride/Aluminum Oxide Interfaces

Jennifer DiStefano, Yu-Chuan Lin, Joshua Robinson, et al.
Journal of Electronic Materials 45 (2) 983 (2016)
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Electronic structure and defects of high dielectric constant gate oxide La2Hf2O7

D. Liu, K. Tse and J. Robertson
Applied Physics Letters 90 (6) 062901 (2007)
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Fabrication of precision integrated capacitors

Jisu Jiang and Paul A. Kohl
Thin Solid Films 634 15 (2017)
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Interface models and processing technologies for surface passivation and interface control in III–V semiconductor nanoelectronics

H. Hasegawa and M. Akazawa
Applied Surface Science 254 (24) 8005 (2008)
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Optimizing the internal electric field distribution of alternating current driven organic light-emitting devices for a reduced operating voltage

Markus Fröbel, Simone Hofmann, Karl Leo and Malte C. Gather
Applied Physics Letters 104 (7) 071105 (2014)
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Effects of oxygen deficiency in the sol–gel ZrOxfilm on the electrical properties of Au/ZrOx/n-type Si/In devices

Wei-Chung Chen, Yow-Jon Lin, Ya-Hui Chen and Hsing-Cheng Chang
Semiconductor Science and Technology 25 (5) 055003 (2010)
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Chemistry of surface nanostructures in lead precursor-rich PbZr0.52Ti0.48O3 sol–gel films

I. Gueye, G. Le Rhun, P. Gergaud, et al.
Applied Surface Science 363 21 (2016)
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Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN

Rathnait D. Long, Aryan Hazeghi, Marika Gunji, Yoshio Nishi and Paul C. McIntyre
Applied Physics Letters 101 (24) 241606 (2012)
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Integration of Amorphous $\hbox{Yb}_{2}\hbox{O}_{3}$ and Crystalline $\hbox{ZrTiO}_{4}$ as Gate Stack for Aggressively Scaled MOS Devices

Yung-Hsien Wu, Rong-Jhe Lyu, Min-Lin Wu, Lun-Lun Chen and Chia-Chun Lin
IEEE Electron Device Letters 33 (3) 426 (2012)
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Synthesis of germanium nanocrystals in hafnium aluminum oxide matrix

F. Zheng, H. G. Chew, W. K. Choi, J. X. Zhang and H. L. Seng
Journal of Applied Physics 101 (11) 114310 (2007)
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Cathodo- and photoluminescence increase in amorphous hafnium oxide under annealing in oxygen

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Journal of Experimental and Theoretical Physics 120 (4) 710 (2015)
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High-k Gate Dielectrics for CMOS Technology

Hong-Liang Lu and David Wei Zhang
High-k Gate Dielectrics for CMOS Technology 31 (2012)
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Solar water oxidation in sputter-deposited nanocrystalline WO3 photoanodes via tuning of Ar:O2 flow rate combinations

Siao Li Liew, Wei Wang, Surani Bin Dolmanan, Glen Tai Wei Goh and Dongzhi Chi
Materials Chemistry and Physics 143 (3) 1171 (2014)
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Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices

Ashwath Rao, Priyanka Chaurasia and B. R. Singh
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Electrode effects on the conduction mechanisms in HfO2-based metal-insulator-metal capacitors

F. El Kamel, P. Gonon, C. Vallée and C. Jorel
Journal of Applied Physics 106 (6) 064508 (2009)
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Atomic layer deposition of HfO2 thin films using H2O2 as oxidant

Min-Jung Choi, Hyung-Ho Park, Doo Seok Jeong, et al.
Applied Surface Science 301 451 (2014)
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Activation of hole charge carriers and generation of electromotive force in gabbro blocks subjected to nonuniform loading

Akihiro Takeuchi and Toshiyasu Nagao
Journal of Geophysical Research: Solid Earth 118 (3) 915 (2013)
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Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

Jia Sun, Jie Jiang, Aixia Lu, Bin Zhou and Qing Wan
IEEE Transactions on Electron Devices 58 (3) 764 (2011)
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Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths

Sheikh Ahmed, Sharif Mominuzzaman, Md. Iramul Chowdhury and Mashiyat Shawkat
Micro & Nano Letters 10 (10) 523 (2015)
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Improving dielectric performance in anodic aluminum oxide via detection and passivation of defect states

M. Mibus, C. Jensen, X. Hu, et al.
Applied Physics Letters 104 (24) 244103 (2014)
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Interface engineering for high performance graphene electronic devices

Dae Jung, Sang Yang, Hamin Park, et al.
Nano Convergence 2 (1) 11 (2015)
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Gate-Stack Engineering in $n$-Type Ultrascaled Si Nanowire Field-Effect Transistors

Mathieu Luisier and Olaf Schenk
IEEE Transactions on Electron Devices 60 (10) 3325 (2013)
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Atomic layer deposited zirconium oxide electron injection layer for efficient organic light emitting diodes

Maria Vasilopoulou, Stella Kennou, Spyridon Ladas, et al.
Organic Electronics 14 (1) 312 (2013)
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Structural and Electronic Properties of GaN (0001)/α-Al2O3(0001) Interface

M. B. Pereira, E. M. Diniz and S. Guerini
Advances in Condensed Matter Physics 2015 1 (2015)
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Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150 °C

Xiaoli Xu, Qingyu Cui, Yizheng Jin and Xiaojun Guo
Applied Physics Letters 101 (22) 222114 (2012)
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Optical properties and thermal stability of LaYbO3 ternary oxide for high-k dielectric application

Wei-tao Su, Li Yang and Bin Li
Applied Surface Science 257 (7) 2526 (2011)
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High-k dielectric Al2O3 nanowire and nanoplate field effect sensors for improved pH sensing

Bobby Reddy, Brian R. Dorvel, Jonghyun Go, et al.
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Electronic defects in LaAlO3

K. Xiong, J. Robertson and S.J. Clark
Microelectronic Engineering 85 (1) 65 (2008)
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Analysis of Off-State Leakage Current Characteristics and Mechanisms of Nanoscale MOSFETs with a High-kGate Dielectric

Hong-Xia Liu and Fei Ma
Chinese Physics Letters 29 (12) 127301 (2012)
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Temperature dependence of electrical transport properties of La4BaCu5−xCoxO13+δconducting oxide thin films

Akihiro Tsuruta, Yusuke Tsujioka, Yutaka Yoshida, et al.
Japanese Journal of Applied Physics 55 (4S) 04EJ08 (2016)
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Reactively sputtered hafnium oxide on silicon dioxide: Structural and electrical properties

Vl. Kolkovsky, K. Lukat, E. Kurth and C. Kunath
Solid-State Electronics 106 63 (2015)
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White light emission from alternating current organic light-emitting devices using high frequency color-mixing

Markus Fröbel, Ajay Perumal, Tobias Schwab, et al.
physica status solidi (a) 210 (11) 2439 (2013)
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Optical susceptibilities in singly charged ZnO colloidal quantum dots embedded in different dielectric matrices

Zaiping Zeng, Emmanuel Paspalakis, Christos S. Garoufalis, Andreas F. Terzis and Sotirios Baskoutas
Journal of Applied Physics 113 (5) 054303 (2013)
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Misfit point defects at the epitaxial Lu2O3/(111)Si interface revealed by electron spin resonance

A. Stesmans, P. Somers, V. V. Afanas’ev, et al.
Applied Physics Letters 93 (10) 103505 (2008)
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Local Dielectric Property of Cubic, Tetragonal, and Monoclinic Hafnium Oxides

Masato Senami, Yasushi Tsuchida, Akinori Fukushima, Yuji Ikeda and Akitomo Tachibana
Japanese Journal of Applied Physics 51 031101 (2012)
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Negative differential resistance in ultrathin Ge-on-insulator FETs

D Kazazis, A Zaslavsky, E Tutuc, N A Bojarczuk and S Guha
Semiconductor Science and Technology 22 (1) S1 (2007)
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A study of the structure of (HfO2) x (Al2O3)1−x /Si films by X-ray photoelectron spectroscopy

V. V. Kaichev, Yu. V. Dubinin, T. P. Smirnova and M. S. Lebedev
Journal of Structural Chemistry 52 (3) 480 (2011)
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Mechanical properties of ultra-thin HfO2 films studied by nano scratches tests

Wei-En Fu, Yong-Qing Chang, Chia-Wei Chang, Chih-Kai Yao and Jiunn-Der Liao
Thin Solid Films 529 402 (2013)
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Model based precise analysis of the injection currents in Al/ZrO2/Al2O3/ZrO2/SiO2/Si structures for use in charge trapping non-volatile memory devices

N. Novkovski, A. Paskaleva, A. Skeparovski and D. Spassov
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L. Wang, Paul K. Chu, K. Xue and J. B. Xu
Applied Physics Letters 94 (3) 032904 (2009)
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Oxygen vacancy estimation of high k metal gate using thermal dynamic model

H. L. Chang and M. S. Liang
Applied Physics Letters 97 (4) 041912 (2010)
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Electronic structure of α-Al2O3: Ab initio simulations and comparison with experiment

T. V. Perevalov, A. V. Shaposhnikov, V. A. Gritsenko, et al.
JETP Letters 85 (3) 165 (2007)
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Gate leakage current partitioning in nanoscale double gate MOSFETs, using compact analytical model

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Solid-State Electronics 75 22 (2012)
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Dielectric constants of amorphous hafnium aluminates: First-principles study

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X-ray reflection spectroscopy of the HfO2/SiO2/Si system in the region of the O–K absorption edge

E.O. Filatova, P. Jonnard and J.-M. André
Thin Solid Films 500 (1-2) 219 (2006)
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Compositional, structural and electronic characteristics of HfO2 and HfSiO dielectrics prepared by radio frequency magnetron sputtering

Li-ping Feng, Zheng-tang Liu and Ya-ming Shen
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Dielectrics in Electric Fields, Second Edition

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Chiung-Wei Lin, Bo-Shen Zheng and Jing-Wei Huang
Japanese Journal of Applied Physics 55 (1S) 01AA10 (2016)
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Influence of post deposition annealing on Y2O3-gated GaAs MOS capacitors and their reliability issues

P.S. Das and A. Biswas
Microelectronic Engineering 88 (3) 282 (2011)
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Band offsets of high K gate oxides on high mobility semiconductors

J. Robertson and B. Falabretti
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Enhanced thermoelectric performance through carrier scattering at spherical nanoparticles in Bi0.5Sb1.5Te3/Ta2O5 composites

Eun Bin Kim, Peyala Dharmaiah, Dongwon Shin, Kap-Ho Lee and Soon-Jik Hong
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Dielectric and insulating properties of SrTiO3/Si heterostructure controlled by cation concentration

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Growth and dielectric properties of tetragonal ZrO2films by limited reaction sputtering

Y Zhou, N Kojima and K Sasaki
Journal of Physics D: Applied Physics 41 (17) 175414 (2008)
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Tailoring resistive switching properties of TiO2with controlled incorporation of oxide nanoparticles

Alejandro Cristians Rios, Lorena Aarão-Rodrigues, Alisson Ronieri Cadore, et al.
Materials Research Express 3 (8) 085024 (2016)
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Charge Trapping and Decay Mechanism in Post Deposition Annealed Er₂O₃ MOS Capacitors by Nanoscopic and Macroscopic Characterization

Robin Khosla, Pawan Kumar and Satinder K. Sharma
IEEE Transactions on Device and Materials Reliability 15 (4) 610 (2015)
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Nonvolatile memory capacitors based on Al2O3 tunneling and HfO2 blocking layers with charge storage in atomic-layer-deposited Pt nanocrystals

Xiao-Jie Liu, Lin Zhu, Mo-Yun Gao, et al.
Applied Surface Science 289 332 (2014)
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New Precursors for the CVD of Zirconium and Hafnium Oxide Films

J.-S. M. Lehn, S. Javed and D. M. Hoffman
Chemical Vapor Deposition 12 (5) 280 (2006)
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Leakage current in high dielectric oxides: Role of defect-induced energies

P. Maleeswaran, D. Nagulapally, R. P. Joshi and A. K. Pradhan
Journal of Applied Physics 113 (18) 184504 (2013)
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Electroluminescence from light-emitting devices with erbium-doped TiO2 films: Enhancement effect of yttrium codoping

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Influence of Co-sputtered HfO2-Si Gate Dielectric in IZO-based thin Film Transistors

Dong Kyu Cho and Moonsuk Yi
Journal of the Institute of Electronics Engineers of Korea 50 (2) 98 (2013)
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Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3

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Formation of W/HfO2/Si gate structures using in situ magnetron sputtering and rapid thermal annealing

E. A. Bogoyavlenskaya, V. I. Rudakov, Yu. I. Denisenko, V. V. Naumov and A. E. Rogozhin
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Ab initio modeling of electronic and optical properties of hafnium silicates

Li-Ping Feng, Zheng-Tang Liu and Bing Xu
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UV-protection and photocatalytic properties of electrospun polyacrylonitrile nanofibrous mats coated with TiO2 nanofilm via sol–gel

Saeed Dadvar, Hossein Tavanai, Hamid Dadvar, Mohammad Morshed and Farhad E. Ghodsi
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B. Dlubak, P. R. Kidambi, R. S. Weatherup, S. Hofmann and J. Robertson
Applied Physics Letters 100 (17) 173113 (2012)
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Changes in Electronic Structure of La[sub x]Al[sub y]O Films as a Function of Postdeposition Annealing Temperature

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Crystallinity of Supercooled Oxide Melts Quantified by Electrical Capacitance Measurements

Yusuke Harada, Noritaka Saito and Kunihiko Nakashima
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Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods

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Direct tunneling gate current model for symmetric double gate junctionless transistor with SiO2/high-kgate stacked dielectric

S. Intekhab Amin and R. K. Sarin
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Effects of successive additions of two capping ligands on the structural properties of PbO nanoparticles

Uzma K. H. Bangi, Wooje Han, Byungwook Yoo and Hyung-Ho Park
Journal of Nanoparticle Research 15 (11) (2013)
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Change in crystalline structure and band alignment in atomic-layer-deposited HfO2on InP using an annealing treatment

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physica status solidi (a) 210 (8) 1612 (2013)
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Hydrogen shuttling near Hf-defect complexes in Si∕SiO2∕HfO2 structures

A. G. Marinopoulos, I. Batyrev, X. J. Zhou, et al.
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Electrochemical and surface analyses of nanostructured Ti–24Nb–4Zr–8Sn alloys in simulated body solution

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Effect of Low Power Deposition and Low Oxidation Temperature on the Interfacial and Structural Properties of sputtered HfO2 Gate Dielectrics

Auxence Minko, Gustavo S. Belo, Sergei Rudenja and Douglas A. Buchanan
MRS Proceedings 1394 mrsf11-1394-m04-10 (2012)
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The influence of Coulomb centers located in HfO[sub 2]/SiO[sub 2] gate stacks on the effective electron mobility

Sylvain Barraud, Olivier Bonno and Mikaël Cassé
Journal of Applied Physics 104 (7) 073725 (2008)
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Studies of the structural, electronic and dielectric properties of Ca1−xSrxTiO3

HaiChuan Chen, JianPing Long, Lijun Yang, XueSong Wei and KaMa Huang
Physica B: Condensed Matter 407 (18) 3705 (2012)
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The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO 2 high-k dielectrics

Ruo Zheng Wang, Sheng Li Wu, Xin Yu Li and Jin Tao Zhang
Solid-State Electronics 133 6 (2017)
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Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium

N. Jain, Y. Zhu, D. Maurya, et al.
Journal of Applied Physics 115 (2) 024303 (2014)
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Effect of crystallographic structure on electrical and mechanical characteristics of Sm2O3-Doped CeO2 films

M. Hartmanová, V. Navrátil, V. Buršíková, F. Kundracik and C. Mansilla
Russian Journal of Electrochemistry 47 (5) 505 (2011)
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High-k Gate Dielectrics for CMOS Technology

Fu-Chien Chiu, Somnath Mondal and Tung-Ming Pan
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High mobility field effect transistor of SnOx on glass using HfOx gate oxide

Chanjong Ju, Chulkwon Park, Hyeonseok Yang, et al.
Current Applied Physics 16 (3) 300 (2016)
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Accurate Calculation of Gate Tunneling Current in Double-Gate and Single-Gate SOI MOSFETs Through Gate Dielectric Stacks

Ferney A. Chaves, David Jimenez, Francisco J. Garcia Ruiz, Andrés Godoy and Jordi Sune
IEEE Transactions on Electron Devices 59 (10) 2589 (2012)
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Hafnium zirconate gate dielectric for advanced gate stack applications

R. I. Hegde, D. H. Triyoso, S. B. Samavedam and B. E. White
Journal of Applied Physics 101 (7) 074113 (2007)
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Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric

Ming Wen, Jingping Xu, Lu Liu, Pui-To Lai and Wing-Man Tang
IEEE Transactions on Electron Devices 64 (3) 1020 (2017)
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Oxide Ultrathin Films

Gennadi Bersuker, Keith McKenna and Alexander Shluger
Oxide Ultrathin Films 101 (2012)
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Stability of HfO2/SiOx/Si surficial films at ultralow oxygen activity

E. Jud, M. Tang and Y.-M. Chiang
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Functional Metal Oxides

Lily Mandal, Weinan Lin, James Lourembam, Satishchandra Ogale and Tom Wu
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Atomic Layer Deposition of Aluminum Oxide for Surface Passivation of InGaAs∕InP Heterojunction Bipolar Transistors

R. Driad, F. Benkhelifa, L. Kirste, M. Mikulla and O. Ambacher
Journal of The Electrochemical Society 158 (12) H1279 (2011)
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Protective layer of AL₂O₃ nanocomposites and surface composition after electrical stress

Christian Meichsner, Timothy Clark, Peter Groeppel, et al.
IEEE Transactions on Dielectrics and Electrical Insulation 22 (5) 2944 (2015)
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Effects of plasma immersion ion nitridation on dielectric properties of HfO2

L. Wang, K. Xue, J. B. Xu, A. P. Huang and Paul K. Chu
Applied Physics Letters 90 (12) 122901 (2007)
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Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices

O. Khaldi, F. Jomni, P. Gonon, C. Mannequin and B. Yangui
Applied Physics A 116 (4) 1647 (2014)
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LanthanideN,N-Dimethylaminodiboranates: Highly Volatile Precursors for the Deposition of Lanthanide-Containing Thin Films

Scott R. Daly, Do Young Kim, Yu Yang, John R. Abelson and Gregory S. Girolami
Journal of the American Chemical Society 132 (7) 2106 (2010)
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Oxygen vacancy in monoclinic HfO2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments

Peter Broqvist and Alfredo Pasquarello
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MOS Devices With High-κ (ZrO$_2$) $_x$(La $_2$O$_3$) $_{1-x}$ Alloy as Gate Dielectric Formed by Depositing ZrO $_2$/La$_2$O $_3$/ZrO$_2$ Laminate and Annealing

Yung-Hsien Wu, Lun-Lun Chen, Rong-Jhe Lyu, et al.
IEEE Transactions on Nanotechnology 11 (3) 483 (2012)
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Ceramics Science and Technology

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Solvothermal approach for low temperature deposition of aluminium oxide thin films

XiaoFei Duan, Nguyen H. Tran, Nicholas K. Roberts and Robert N. Lamb
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Electrostatic Gating of Ultrathin Films

A.M. Goldman
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Defects in Microelectronic Materials and Devices

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High temperature thermal stability of the HfO2/Ge (100) interface as a function of surface preparation studied by synchrotron radiation core level photoemission

Rajesh Kumar Chellappan, Durga Rao Gajula, David McNeill and Greg Hughes
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XiaoFei Duan, Irving Liaw, Nguyen H. Tran and Robert N. Lamb
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Electrochemical characterization of nanostructured Ti–24Nb–4Zr–8Sn alloy in 3.5% NaCl solution

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Current transport analysis of ZrO2 thin films: Effects of post-deposition annealing

Heejun Jeong
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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Yi Zhao, Koji Kita and Akira Toriumi
Applied Physics Letters 96 (24) 242901 (2010)
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Effect of postdeposition annealing on electrical properties of RF-magnetron sputtered CeOx gate on 4H-silicon carbide

SooKiet Chuah, KuanYew Cheong, Zainovia Lockman and Zainuriah Hassan
physica status solidi (a) 208 (8) 1925 (2011)
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Electron-Related Phenomena at the $\hbox{TaN/Al}_{2} \hbox{O}_{3}$ Interface

Rosario Rao, Paolo Lorenzi, Gabriella Ghidini, Fabrizio Palma and Fernanda Irrera
IEEE Transactions on Electron Devices 57 (3) 637 (2010)
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Analytical modeling of direct tunneling current through gate stacks for the determination of suitable high-kdielectrics for nanoscale double-gate MOSFETs

Ghader Darbandy, Romain Ritzenthaler, François Lime, et al.
Semiconductor Science and Technology 26 (4) 045002 (2011)
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Method to characterize dielectric properties of powdery substances

M. Tuhkala, J. Juuti and H. Jantunen
Journal of Applied Physics 114 (1) 014108 (2013)
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Atomic layer deposition of scandium-based oxides

Laura Nyns, Judit G. Lisoni, Geert Van den Bosch, Sven Van Elshocht and Jan Van Houdt
physica status solidi (a) 211 (2) 409 (2014)
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Ceramics Science and Technology

Sanjay Mathur, Aadesh Pratap Singh, Ralf Müller, et al.
Ceramics Science and Technology 291 (2012)
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Fabrication and Characterization of Polymer-Enhanced TSVs, Inductors, and Antennas for Mixed-Signal Silicon Interposer Platforms

Paragkumar A. Thadesar and Muhannad S. Bakir
IEEE Transactions on Components, Packaging and Manufacturing Technology 6 (3) 455 (2016)
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Oxygen vacancy in Al2O3: Photoluminescence study and first-principle simulation

V.A. Pustovarov, T.V. Perevalov, V.A. Gritsenko, T.P. Smirnova and A.P. Yelisseyev
Thin Solid Films 519 (19) 6319 (2011)
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Passivation of oxygen vacancy states in HfO2 by nitrogen

K. Xiong, J. Robertson and S. J. Clark
Journal of Applied Physics 99 (4) 044105 (2006)
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Progress of High-k Dielectrics Applicable to SONOS-Type Nonvolatile Semiconductor Memories

Zhenjie Tang, Zhiguo Liu and Xinhua Zhu
Transactions on Electrical and Electronic Materials 11 (4) 155 (2010)
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Physics-based surface potential, electric field and drain current model of aδp+Si1–xGexgate–drain underlap nanoscale n-TFET

Rupam Goswami, Brinda Bhowmick and Srimanta Baishya
International Journal of Electronics 1 (2016)
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Thermal stability of amorphous LaScO3 films on silicon

L. F. Edge, D. G. Schlom, S. Rivillon, et al.
Applied Physics Letters 89 (6) 062902 (2006)
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High-k Gate Dielectrics for CMOS Technology

Yi Zhao
High-k Gate Dielectrics for CMOS Technology 185 (2012)
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Interface-controlled high dielectric constant Al2O3/TiOx nanolaminates with low loss and low leakage current density for new generation nanodevices

Geunhee Lee, Bo-Kuai Lai, Charudatta Phatak, Ram S. Katiyar and Orlando Auciello
Journal of Applied Physics 114 (2) 027001 (2013)
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Interfacial atomic structures, energetics and band offsets of Ge:ZrO2 interfaces

Koon-Yiu Tse and John Robertson
Journal of Applied Physics 100 (9) 093713 (2006)
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High-temperature thermal stability study of 1 nm Al2O3deposited on InAs surfaces investigated by synchrotron radiation based photoemission spectroscopy

Rajesh Kumar Chellappan, Durga Rao Gajula, David McNeill and Greg Hughes
Journal of Physics D: Applied Physics 47 (5) 055107 (2014)
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Band gaps and defect levels in functional oxides

J. Robertson, K. Xiong and S.J. Clark
Thin Solid Films 496 (1) 1 (2006)
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Interfacial and electrical properties of radio frequency sputtered ultra-thin TiO2 film for gate oxide applications

Madhuchhanda Nath and Asim Roy
Journal of Materials Science: Materials in Electronics 26 (11) 9107 (2015)
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High-K dielectrics for the gate stack

Jean-Pierre Locquet, Chiara Marchiori, Maryline Sousa, Jean Fompeyrine and Jin Won Seo
Journal of Applied Physics 100 (5) 051610 (2006)
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The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers

P. Thangadurai, W.D. Kaplan, V. Mikhelashvili and G. Eisenstein
Microelectronics Reliability 49 (7) 716 (2009)
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Formation of thin-film HfO2/Si(100) structures by high-frequency magnetron sputtering

V. I. Rudakov, E. A. Bogoyavlenskaya, Yu. I. Denisenko and V. V. Naumov
Russian Microelectronics 40 (6) 383 (2011)
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Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient

Yew Hoong Wong and Kuan Yew Cheong
Electronic Materials Letters 8 (1) 47 (2012)
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Control of the Dirac point in graphene by UV light

A. Yurgens, N. Lindvall, J. Sun, Y. Nam and Y. W. Park
JETP Letters 98 (11) 704 (2014)
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Electronic stopping force of 12C, 28Si and 63Cu ions in HfO2 and SiO2 dielectric films

M. Msimanga, C.A. Pineda-Vargas, T. Hlatshwayo, et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 322 54 (2014)
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CMUTs with high-K atomic layer deposition dielectric material insulation layer

Toby Xu, Coskun Tekes and F. Degertekin
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 61 (12) 2121 (2014)
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Deposition and post-deposition annealing of thin Y2O3 film on n-type Si in argon ambient

Hock Jin Quah and Kuan Yew Cheong
Materials Chemistry and Physics 130 (3) 1007 (2011)
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Comprehensive Semiconductor Science and Technology

J. Robertson
Comprehensive Semiconductor Science and Technology 132 (2011)
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Soft x-ray photoemission study of the thermal stability of the Al2O3/Ge (100) interface as a function of surface preparation

Rajesh Kumar Chellappan, Durga Rao Gajula, David McNeill and Greg Hughes
Journal of Applied Physics 114 (8) 084312 (2013)
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Electrical instability in LaLuO3 based metal–oxide–semiconductor capacitors and role of the metal electrodes

Rosario Rao and Fernanda Irrera
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 31 (1) 01A116 (2013)
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Radiation Induced Charge Trapping in Sputtered ${\rm ZrO}_{\rm 2} \!\! : \!\! {\rm N}$ Dielectric Thin Films on Silicon

Ashwath Rao, Joyline D'sa, Saurabh Goyal and B. R. Singh
IEEE Transactions on Nuclear Science 61 (4) 2397 (2014)
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Atomic and electronic structures of lutetium oxide Lu2O3

V. V. Kaichev, T. I. Asanova, S. B. Erenburg, et al.
Journal of Experimental and Theoretical Physics 116 (2) 323 (2013)
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A Thin-Film Transistor With High Drain Current Induced by a Trap-Assisted Electric Double Layer

Ankita Gangwar and Baquer Mazhari
IEEE Transactions on Electron Devices 63 (12) 4776 (2016)
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Nanoscale CMOS

O. Engström, I. Z. Mitrovic, S. Hall, et al.
Nanoscale CMOS 23 (2013)
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Ge-Based Nonvolatile Memory Formed on Si Substrate with Ge-Stabilized Tetragonal ZrO2 as Charge Trapping Layer

Yung-Hsien Wu, Jia-Rong Wu, Min-Lin Wu, Lun-Lun Chen and Chia-Chun Lin
Journal of The Electrochemical Society 158 (4) H410 (2011)
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Correlation between phase and optical properties of yttrium-doped hafnium oxide nanocrystalline thin films

A. Ortega, E.J. Rubio, K. Abhilash and C.V. Ramana
Optical Materials 35 (9) 1728 (2013)
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Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators

Yi Zhao, Koji Kita, Kentaro Kyuno and Akira Toriumi
Applied Physics Letters 94 (4) 042901 (2009)
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Trapped charge dynamics in a sol–gel based TiO2high-kgate dielectric silicon metal–oxide–semiconductor field effect transistor

M Ziaur Rahman Khan, D G Hasko, M S M Saifullah and M E Welland
Journal of Physics: Condensed Matter 21 (21) 215902 (2009)
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Ferroelectric-Gate Field Effect Transistor Memories

Mitsue Takahashi and Shigeki Sakai
Topics in Applied Physics, Ferroelectric-Gate Field Effect Transistor Memories 131 23 (2016)
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HfO2-assisted SiO2 reduction in HfO2/SiO2/Si stacks

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio and Akira Toriumi
Thin Solid Films 557 272 (2014)
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Effect of post-deposition annealing temperature on CeO2 thin film deposited on silicon substrate via RF magnetron sputtering technique

Soo Kiet Chuah, Kuan Yew Cheong, Zainovia Lockman and Zainuriah Hassan
Materials Science in Semiconductor Processing 14 (2) 101 (2011)
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Capacitance–voltage characteristics of sub-nanometric Al2O3 / TiO2 laminates: dielectric and interface charge densities

Abdelkader Kahouli, Marwa Ben Elbahri, Oleg Lebedev and Ulrike Lüders
Journal of Physics: Condensed Matter 29 (27) 275301 (2017)
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Oxygen deficiency defects in amorphous Al2O3

T. V. Perevalov, O. E. Tereshenko, V. A. Gritsenko, et al.
Journal of Applied Physics 108 (1) 013501 (2010)
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Titania/Alumina Bilayer Gate Dielectrics for Ge MOS Devices: Frequency- and Temperature-Dependent Electrical Characteristics

Shankar Swaminathan and Paul C. McIntyre
Electrochemical and Solid-State Letters 13 (9) G79 (2010)
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Analytical modeling of the gate tunneling leakage for the determination of adequate high-k dielectrics in double-gate SOI MOSFETs at the 22nm node

Ghader Darbandy, Romain Ritzenthaler, Francois Lime, et al.
Solid-State Electronics 54 (10) 1083 (2010)
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Migration of oxygen vacancy in HfO2 and across the HfO2∕SiO2 interface: A first-principles investigation

Nathalie Capron, Peter Broqvist and Alfredo Pasquarello
Applied Physics Letters 91 (19) 192905 (2007)
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Conduction and field induced degradation in thin ZrO2 films sputtered in nitrogen containing plasma on silicon

Ashwath Rao, Joyline D’sa, Saurabh Goyal and B. R. Singh
Journal of Materials Science: Materials in Electronics 25 (3) 1583 (2014)
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Novel photodefined polymer-embedded vias for silicon interposers

Paragkumar A Thadesar and Muhannad S Bakir
Journal of Micromechanics and Microengineering 23 (3) 035003 (2013)
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Electrochemical Mechanical Polishing of Copper with High Permittivity Abrasives

Weisi Li, Dongming Guo, Zhuji Jin, Zhe Wang and Zewei Yuan
Materials and Manufacturing Processes 28 (2) 207 (2013)
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Characterization of the interface between the Hf-based high-k thin film and the Si using spatially resolved electron energy-loss spectroscopy

X.F. Wang, Quan Li, P.F. Lee, J.Y. Dai and X.G. Gong
Micron 41 (1) 15 (2010)
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Nature and stability of the (100)Si∕LaAlO3 interface probed by paramagnetic defects

A. Stesmans, K. Clémer, V. V. Afanas’ev, L. F. Edge and D. G. Schlom
Applied Physics Letters 89 (11) 112121 (2006)
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Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs

Yang Liu, A. Shanware, L. Colombo and R. Dutton
IEEE Electron Device Letters 27 (6) 489 (2006)
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Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer

Kuniaki HASHIMOTO, Akio OHTA, Hideki MURAKAMI, Seiichiro HIGASHI and Seiichi MIYAZAKI
IEICE Transactions on Electronics E96.C (5) 674 (2013)
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First principles study of structural and electronic properties of cubic phase of ZrO2 and HfO2

Yong-Liang Yang, Xiao-Li Fan, Chong Liu and Run-Xin Ran
Physica B: Condensed Matter 434 7 (2014)
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Nanocrystalline LaYSrO films for liquid-crystal alignment via a solution process

Seon Yeong Kim, Hong-Gyu Park, Min-Jae Cho, Hae-Chang Jeong and Dae-Shik Seo
Liquid Crystals 41 (7) 940 (2014)
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Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO 2 and fabricated at low temperature

Joel Molina, Reydezel Torres, Alok Ranjan and Kin-Leong Pey
Materials Science in Semiconductor Processing 66 191 (2017)
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Ultrahigh resolution imaging of local structural distortions in intergrowth tungsten bronzes

A.I. Kirkland, J. Sloan and S. Haigh
Ultramicroscopy 107 (6-7) 501 (2007)
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Handbook of Cleaning in Semiconductor Manufacturing

Muhammad M. Hussain, Denis Shamiryan, Vasile Paraschiv, Kenichi Sano and Karen A. Reinhardt
Handbook of Cleaning in Semiconductor Manufacturing 237 (2011)
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Study on the surface erosion route to the fabrication of TiO2 hollow spheres

Liu Lei, Cui Yuming, Li Bo, Zhou Xingfu and Ding Weiping
Applied Surface Science 256 (8) 2596 (2010)
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First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si–SiO2–HfO2 stack

Peter Broqvist, Audrius Alkauskas, Julien Godet and Alfredo Pasquarello
Journal of Applied Physics 105 (6) 061603 (2009)
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Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

Shankar Swaminathan, Michael Shandalov, Yasuhiro Oshima and Paul C. McIntyre
Applied Physics Letters 96 (8) 082904 (2010)
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Photonics

Robert H. Lipson
Photonics 133 (2015)
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Understanding Structure and Stability of Monoclinic Zirconia Surfaces from First-Principles Calculations

Andrey S. Bazhenov and Karoliina Honkala
Topics in Catalysis 60 (6-7) 382 (2017)
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Band gaps and dielectric constants of amorphous hafnium silicates: A first-principles investigation

Peter Broqvist and Alfredo Pasquarello
Applied Physics Letters 90 (8) 082907 (2007)
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High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ${\rm ZrO}_{2}$ Gate Dielectric

Yana Gao, Xifeng Li, Longlong Chen, et al.
IEEE Electron Device Letters 35 (5) 554 (2014)
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Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy 263 (2008)
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Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

Vladimir Djara, Marilyne Sousa, Nikola Dordevic, et al.
Microelectronic Engineering 147 231 (2015)
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Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

Jiro Yota, Hong Shen and Ravi Ramanathan
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (1) 01A134 (2013)
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Optical studies of amorphous Ge nanostructures in Al2O3 produced by pulsed laser deposition

J. Martín-Sánchez, J. Toudert, R. Serna, A. de Andrés and J. García-López
Thin Solid Films 541 92 (2013)
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Nanoscale channel engineered double gate MOSFET for mixed signal applications using high-k dielectric

D Nirmal, P Vijayakumar, K Shruti and N Mohankumar
International Journal of Circuit Theory and Applications 41 (6) 608 (2013)
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Synthesis and Dielectric Studies of Monoclinic Nanosized Zirconia

I. Flavia Princess Nesamani, V. Lakshmi Prabha, Aswathy Paul and D. Nirmal
Advances in Condensed Matter Physics 2014 1 (2014)
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Bonding and interface states ofSi:HfO2andSi:ZrO2interfaces

P. W. Peacock, K. Xiong, K. Tse and J. Robertson
Physical Review B 73 (7) 075328 (2006)
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Comparing Electron Recombination via Interfacial Modifications in Dye-Sensitized Solar Cells

Luping Li, Shikai Chen, Cheng Xu, et al.
ACS Applied Materials & Interfaces 6 (23) 20978 (2014)
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Studies on Electrical Properties of Hybrid Polymeric Gate Dielectrics for Field Effect Transistors

Davoud Dastan, Suresh W. Gosavi and Nandu B. Chaure
Macromolecular Symposia 347 (1) 81 (2015)
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BEEM studies on metal high K-dielectric HfO2 interfaces

Yi Zheng, Cedric Troadec, Andrew T S Wee, et al.
Journal of Physics: Conference Series 61 1347 (2007)
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Characterization of dielectric layers grown at low temperature by atomic layer deposition

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Thin Solid Films 577 97 (2015)
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High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics

Mazran Esro, George Vourlias, Christopher Somerton, William I. Milne and George Adamopoulos
Advanced Functional Materials 25 (1) 134 (2015)
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Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films

S. Dueñas, H. Castán, H. García, et al.
Journal of Non-Crystalline Solids 354 (2-9) 404 (2008)
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The atomic and electron structure of ZrO2

A. V. Shaposhnikov, D. V. Gritsenko, I. P. Petrenko, et al.
Journal of Experimental and Theoretical Physics 102 (5) 799 (2006)
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Effects of annealing time on the electrical properties of the Y2O3gate on silicon

Hock Jin Quah and Kuan Yew Cheong
Journal of Experimental Nanoscience 10 (1) 19 (2015)
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Industrial Chemistry of Oxides for Emerging Applications

Lech Pawłowski
Industrial Chemistry of Oxides for Emerging Applications 1 (2018)
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Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor

J. Charles Pravin, D. Nirmal, P. Prajoon, N. Mohan Kumar and J. Ajayan
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Dielectric constant measurement of zeolite powders by time-domain reflectometry

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Multi-petahertz electron interference in Cr:Al2O3 solid-state material

Hiroki Mashiko, Yuta Chisuga, Ikufumi Katayama, et al.
Nature Communications 9 (1) (2018)
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Effect of nitrogen passivation/pre nitration on interface properties of atomic layer deposited HfO2

Savita Maurya
Journal of Materials Science: Materials in Electronics 29 (9) 7917 (2018)
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Photonic curing of sol–gel derived HfO2 dielectrics for organic field-effect transistors

Kornelius Tetzner, Kurt A. Schroder and Karlheinz Bock
Ceramics International 40 (10) 15753 (2014)
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Intrinsically ionic conductive cellulose nanopapers applied as all solid dielectrics for low voltage organic transistors

Shilei Dai, Yingli Chu, Dapeng Liu, et al.
Nature Communications 9 (1) (2018)
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Trapping in GdSiO high-k films

R. Rao, R. Simoncini, H. D. B. Gottlob, M. Schmidt and F. Irrera
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29 (1) 01A902 (2011)
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Computed and Experimental Absorption Spectra of the Perovskite CH3NH3PbI3

Xi Zhu, Haibin Su, Rudolph A. Marcus and Maria E. Michel-Beyerle
The Journal of Physical Chemistry Letters 5 (17) 3061 (2014)
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Impact of ultrathin Al2O3 interlayer on thermal stability and leakage current properties of TiO2/Al2O3 stacking dielectrics

Hong-Bo Wang, Da-Yan Ma, Fei Ma and Ke-Wei Xu
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 30 (4) 040601 (2012)
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Silicon electro-optic modulator based on an ITO-integrated tunable directional coupler

Jin-Soo Kim and Jin Tae Kim
Journal of Physics D: Applied Physics 49 (7) 075101 (2016)
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Classical over-the-barrier model for neutralization of highly charged ions above thin dielectric films

R. E. Lake, C. E. Sosolik and J. M. Pomeroy
Physical Review A 87 (6) (2013)
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Bound and resonant impurity states in a narrow gapped armchair graphene nanoribbon

B. S. Monozon and P. Schmelcher
Physical Review B 86 (24) (2012)
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How stress can reduce dissipation in glasses

Jiansheng Wu and Clare C. Yu
Physical Review B 84 (17) 174109 (2011)
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Nontrigonal Ge dangling bond interface defect in condensation-grown(100)Si1−xGex/SiO2

A. Stesmans, P. Somers and V. V. Afanas’ev
Physical Review B 79 (19) 195301 (2009)
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Electrostatic Modulation of the Superfluid Density in an UltrathinLa2−xSrxCuO4Film

A. Rüfenacht, J.-P. Locquet, J. Fompeyrine, D. Caimi and P. Martinoli
Physical Review Letters 96 (22) 227002 (2006)
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Mechanism of the monoclinic-to-tetragonal phase transition induced in zirconia and hafnia by swift heavy ions

Abdenacer Benyagoub
Physical Review B 72 (9) 094114 (2005)
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Silizium-Halbleitertechnologie

Ulrich Hilleringmann
Silizium-Halbleitertechnologie 177 (2019)
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Prospects and challenges of perovskite type transparent conductive oxides in photovoltaic applications. Part II – Synthesis and deposition

Muhammad Arif Riza, Mohd Adib Ibrahim, Ubani Charles Ahamefula, et al.
Solar Energy 139 309 (2016)
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Unipolar resistive switching characteristics of pnictogen oxide films: Case study of Sb2O5

Youngbae Ahn, Seung Wook Ryu, Jong Ho Lee, et al.
Journal of Applied Physics 112 (10) 104105 (2012)
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Implementation of Low-Power Electronic Devices Using Solution-Processed Tantalum Pentoxide Dielectric

Jungwoo Heo, Song Yi Park, Jae Won Kim, et al.
Advanced Functional Materials 28 (28) 1704215 (2018)
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First-principles study on leakage current caused by oxygen vacancies at HfO2/SiO2/Si interface

Kensuke Takagi and Tomoya Ono
Japanese Journal of Applied Physics 57 (6) 066501 (2018)
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Electron spin resonance features of the Ge Pb1 dangling bond defect in condensation-grown (100)Si/SiO2/Si1−xGex/SiO2 heterostructures

P. Somers, A. Stesmans, L. Souriau and V. V. Afanas’ev
Journal of Applied Physics 112 (7) 074501 (2012)
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Stress and texture development during sputtering of yttria, zirconia, and yttria stabilized zirconia films on Si substrates

K. V. L. V. Narayanachari and Srinivasan Raghavan
Journal of Applied Physics 112 (7) 074910 (2012)
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Handbook of Thin Film Deposition

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Handbook of Thin Film Deposition 107 (2018)
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Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations

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Applied Physics Letters 90 (25) 252101 (2007)
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Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

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Journal of Applied Physics 112 (1) 014107 (2012)
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First principle study of single electron transistor based on metal-organic complex of dibenzothiophene

Anu, Anurag Srivastava and Mohd. Shahid Khan
Organic Electronics 53 227 (2018)
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Crystalline phase dependent electrical properties of Mg incorporated tetragonal phase stabilized ZrO 2 high-κ dielectric layer in Si based MOS capacitors

J. Udaya Bhanu, A. Amutha, G. Ramesh Babu, B. Sundaravel and P. Thangadurai
Materials Science in Semiconductor Processing 81 7 (2018)
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Impact of encapsulation method on the adsorbate induced electrical instability of monolayer graphene

Sırrı Batuhan Kalkan, Alper Yanilmaz and Cem Çelebi
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Defect correlated with positive charge trapping in functional HfO 2 layers on (100)Si revealed by electron spin resonance: Evidence for oxygen vacancy?

A. Stesmans and V.V. Afanas'ev
Microelectronic Engineering 178 112 (2017)
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The peculiarities of light absorption and light emission in Cu-doped Y-stabilized ZrO2 nanopowders

N. Korsunska, M. Baran, V. Papusha, et al.
Applied Nanoscience 9 (5) 965 (2019)
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Controllable P‐ and N‐Type Conversion of MoTe 2 via Oxide Interfacial Layer for Logic Circuits

Yong Ju Park, Ajit K. Katiyar, Anh Tuan Hoang and Jong‐Hyun Ahn
Small 15 (28) 1901772 (2019)
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Investigation on the dielectric properties of titanium-loaded ionic liquid-based nano-organosilica as a novel material

Binazir Vaziri, Shaaker Hajati and Dawood Elhamifar
Advanced Powder Technology 29 (3) 813 (2018)
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Improved reliability of breakdown voltage measurement of yttrium oxide coatings by plasma spray

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Ceramics International 45 (17) 22169 (2019)
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Depth resolved band alignments of ultrathin TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 dynamic random access memory capacitors

Sang Yeon Lee, Jaewan Chang, Younsoo Kim, et al.
Applied Physics Letters 105 (20) 201603 (2014)
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Interface formation energy, bonding, energy band alignment in α-NaYF 4 related core shell models: For future multi-layer core shell luminescence materials

Bolong HUANG, Hao DONG, Ka-Leung Wong, Lingdong SUN and Chunhua YAN
Journal of Rare Earths 35 (4) 315 (2017)
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Energy band alignment of HfO2 on p-type (100)InP

Meng-Meng Yang, Hai-Ling Tu, Jun Du, et al.
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Electrical Atomic Force Microscopy for Nanoelectronics

Christian Rodenbücher, Marcin Wojtyniak and Kristof Szot
NanoScience and Technology, Electrical Atomic Force Microscopy for Nanoelectronics 29 (2019)
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β-Ga2O3-based metal–oxide–semiconductor photodiodes with HfO2 as oxide

Takayoshi Oshima, Makoto Hashikawa, Sansei Tomizawa, et al.
Applied Physics Express 11 (11) 112202 (2018)
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Defect-Free Copolymer Gate Dielectrics for Gating MoS2 Transistors

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The Journal of Physical Chemistry C 122 (23) 12193 (2018)
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Simulation study of gated nanowire InAs/Si Hetero p channel TFET and effects of interface trap

H. Bijo Joseph, Sankalp Kumar Singh, R.M. Hariharan, Yusuf Tarauni and D. John Thiruvadigal
Materials Science in Semiconductor Processing 103 104605 (2019)
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Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric

Jingping Xu, Ming Wen, Xinyuan Zhao, et al.
Nanotechnology 29 (34) 345201 (2018)
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Charge-Trapping Non-Volatile Memories

E. Verrelli and D. Tsoukalas
Charge-Trapping Non-Volatile Memories 157 (2017)
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Quantum Dot Channel (QDC) Field Effect Transistors (FETs) Configured as Floating Gate Nonvolatile Memories (NVMs)

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Quantitative Analysis of Shape-Sensitive Interaction of a Charged Nanoplate and a Charged Nanowire

Orion Ciftja
Nano 10 (08) 1550114 (2015)
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Effect of surfactant and mineralizer on the dielectric properties of zirconia nanocrsytals

A. Uma Maheswari, Sreedevi R. Mohan and M. Sivakumar
Applied Surface Science 427 1174 (2018)
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Effects of annealing on electrical performance of multilayer MoS2transistors with atomic layer deposited HfO2gate dielectric

Ming Wen, Jingping Xu, Lu Liu, Pui-To Lai and Wing-Man Tang
Applied Physics Express 9 (9) 095202 (2016)
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Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

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Journal of Applied Physics 118 (13) 134504 (2015)
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PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases

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Band alignment and interfacial chemical structure of the HfLaO/InGaZnO4 heterojunction investigated by x-ray photoelectron spectroscopy

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Journal of Physics D: Applied Physics 50 (14) 145106 (2017)
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Effects of post-deposition annealing time in oxygen ambient on Y2O3 film deposited on silicon substrate

H. J. Quah and K. Y. Cheong
Materials Research Innovations 18 (sup6) S6-495 (2014)
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Junctionless Tunnel Field Effect Transistor with Nonuniform Doping

Yogesh Goswami, Pranav Asthana, Shibir Basak and Bahniman Ghosh
International Journal of Nanoscience 14 (03) 1450025 (2015)
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Electronic properties of hafnium oxide: A contribution from defects and traps

Vladimir A. Gritsenko, Timofey V. Perevalov and Damir R. Islamov
Physics Reports 613 1 (2016)
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High-ĸ dielectric oxide as an interfacial layer with enhanced photo-generation for Gr/Si solar cells

Muhammad Fahad Bhopal, Kamran Akbar, Malik Abdul Rehman, et al.
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Deep and fast free-space electro-absorption modulation in a mobility-independent graphene-loaded Bragg resonator

Spyros Doukas, Alma Chatzilari, Alva Dagkli, Andreas Papagiannopoulos and Elefterios Lidorikis
Applied Physics Letters 113 (1) 011102 (2018)
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Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta2O5/Si interface

Ashwath Rao, Ankita Verma and B.R. Singh
Radiation Effects and Defects in Solids 170 (6) 510 (2015)
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A new grounded lamination gate (GLG) for diminished fringe-capacitance effects in high-/spl kappa/ gate-dielectric MOSFETs

M.J. Kumar, V. Venkataraman and S.K. Gupta
IEEE Transactions on Electron Devices 53 (10) 2578 (2006)
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Channel Hot-Carrier Degradation in Short-Channel Transistors With High- $k$/Metal Gate Stacks

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IEEE Transactions on Device and Materials Reliability 9 (3) 425 (2009)
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Nonlinear Optical Properties of Si Nanodot in ${\rm Al}_{2}{\rm O}_{3}$ Matrix

Anchala, Shiv Prasad Purohit and Kailash Chandra Mathur
IEEE Journal of Quantum Electronics 48 (5) 628 (2012)
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Auger electron spectroscopy study of semiconductor surfaces: Effect of cleaning in inert atmosphere

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Electrically Polarized Biomaterials

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Transparent conducting oxides for electro-optical plasmonic modulators

Viktoriia E. Babicheva, Alexandra Boltasseva and Andrei V. Lavrinenko
Nanophotonics 4 (1) (2015)
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Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics

K.C. Lin, P.C. Juan, C.H. Liu, M.C. Wang and C.H. Chou
Microelectronics Reliability 55 (11) 2198 (2015)
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Effects of the dielectric properties of the ceramic–solvent interface on the binding of proteins to oxide ceramics: a non-local electrostatic approach

Alexander I Rubinstein, Renat F Sabirianov and Fereydoon Namavar
Nanotechnology 27 (41) 415703 (2016)
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Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories

Robin Khosla, Erlend Granbo Rolseth, Pawan Kumar, et al.
IEEE Transactions on Device and Materials Reliability 17 (1) 80 (2017)
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Physical and electrical properties of thermal oxidized Sm2O3 gate oxide thin film on Si substrate: Influence of oxidation durations

Kian Heng Goh, A.S.M.A. Haseeb and Yew Hoong Wong
Thin Solid Films 606 80 (2016)
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Interface and electrical properties of ultra-thin HfO2 film grown by radio frequency sputtering

Madhuchhanda Nath and Asim Roy
Physica B: Condensed Matter 482 43 (2016)
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Investigation of high-kyttrium copper titanate thin films as alternative gate dielectrics

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Journal of Physics D: Applied Physics 49 (40) 405303 (2016)
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Computation of Dielectric Response in Molecular Solids for High Capacitance Organic Dielectrics

Henry M. Heitzer, Tobin J. Marks and Mark A. Ratner
Accounts of Chemical Research 49 (9) 1614 (2016)
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Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

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Applied Physics Letters 104 (8) 082908 (2014)
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Current–voltage and low-frequency noise analysis of heterojunction diodes with various passivation layers

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Thin Solid Films 598 109 (2016)
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Dielectric Engineering of Nanostructured Layers to Control the Transport of Injected Charges in Thin Dielectrics

Kremena Makasheva, Christina Villeneuve-Faure, Caroline Bonafos, et al.
IEEE Transactions on Nanotechnology 15 (6) 839 (2016)
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Journal of Applied Physics 101 (1) 013514 (2007)
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Interface chemistry study of InSb/Al 2 O 3 stacks upon in situ post deposition annealing by synchrotron radiation photoemission spectroscopy

Xiaoran Shi, Xinglu Wang, Yong Sun, et al.
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The structure of the SiO2∕Si(100) interface from a restraint-free search using computer simulations

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Applied Physics Letters 88 (1) 012101 (2006)
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OPTICAL VIBRATION MODES IN SPHERICAL CORE-SHELL QUANTUM DOTS

Y. XING, X. X. LIANG and Z. P. WANG
Modern Physics Letters B 27 (18) 1350134 (2013)
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Applied Physics Letters 89 (11) 112905 (2006)
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Optical Properties of Nonstoichiometric Tantalum Oxide TaOx (x < 5/2) According to Spectral-Ellipsometry and Raman-Scattering Data

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Stored Coulomb Self-Energy of a Uniformly Charged Rectangular Plate

Orion Ciftja
Advances in Mathematical Physics 2016 1 (2016)
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Band offsets, Schottky barrier heights, and their effects on electronic devices

John Robertson
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (5) 050821 (2013)
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Probing the properties of atomic layer deposited ZrO2 films on p-Germanium substrates

Ariadne P. Kerasidou, Martha A. Botzakaki, Nikolaos Xanthopoulos, et al.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (1) 01A126 (2013)
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Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate

V. Mikhelashvili, B. Meyler, Y. Shneider, et al.
Journal of Applied Physics 113 (7) 074503 (2013)
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Reduction of interfacial SiO2 at HfO2/Si interface with Ta2O5 cap

Kazuyoshi Kobashi, Takahiro Nagata, Atsushi Ogura, Toshihide Nabatame and Toyohiro Chikyow
Journal of Applied Physics 114 (1) 014106 (2013)
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Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

R. D. Long, C. M. Jackson, J. Yang, et al.
Applied Physics Letters 103 (20) 201607 (2013)
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Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

Dayu Zhou, Jin Xu, Qing Li, et al.
Applied Physics Letters 103 (19) 192904 (2013)
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Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiOx/W cross-point structure

Subhranu Samanta, Xiao Gong, Panpan Zhang, Kaizhen Han and Xuanyao Fong
Journal of Alloys and Compounds 805 915 (2019)
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Growth and properties of crystalline barium oxide on the GaAs(100) substrate

M. Yasir, J. Dahl, M. Kuzmin, et al.
Applied Physics Letters 103 (19) 191601 (2013)
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Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses

Weichun Luo, Hong Yang, Wenwu Wang, et al.
Applied Physics Letters 103 (18) 183502 (2013)
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Investigation of the gate oxide leakage current of low temperature formed hafnium oxide films

E. Verrelli and D. Tsoukalas
Journal of Applied Physics 113 (11) 114103 (2013)
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Band offsets of nitrided ultrathin hafnium silicate films

N. T. Barrett, O. Renault, P. Besson, Y. Le Tiec and F. Martin
Applied Physics Letters 88 (16) 162906 (2006)
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Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics

Eun Ji Kim, Michael Shandalov, Krishna C. Saraswat and Paul C. McIntyre
Applied Physics Letters 98 (3) 032108 (2011)
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High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition

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Applied Physics Letters 98 (25) 252903 (2011)
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Atomic and electronic structure of amorphous and crystalline hafnium oxide: X-ray photoelectron spectroscopy and density functional calculations

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Journal of Applied Physics 101 (5) 053704 (2007)
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Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices

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Applied Physics Letters 101 (23) 232907 (2012)
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Hot electron transport in Au–HfO2–SiO2–Si structures studied by ballistic electron emission spectroscopy

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Applied Physics Letters 90 (14) 142915 (2007)
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Effect of ionic substitutions on the structure and dielectric properties of hafnia: A first principles study

Eric Cockayne
Journal of Applied Physics 103 (8) 084103 (2008)
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Reduced electron back-injection in Al2O3/AlOx/Al2O3/graphene charge-trap memory devices

Sejoon Lee, Emil B. Song, Sung Min Kim, et al.
Applied Physics Letters 101 (24) 243109 (2012)
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Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

O. Engström, B. Raeissi and J. Piscator
Journal of Applied Physics 103 (10) 104101 (2008)
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Control of interfacial silicate between HfO2 and Si by high concentration ozone

L. Wang, K. Xue, J. B. Xu, A. P. Huang and Paul K. Chu
Applied Physics Letters 88 (7) 072903 (2006)
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Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide

R. Driad, R. E. Sah, R. Schmidt and L. Kirste
Applied Physics Letters 100 (1) 014102 (2012)
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Structural and dielectric properties of epitaxial Sm2O3 thin films

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Applied Physics Letters 92 (6) 062905 (2008)
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Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on InP substrates

Xinqiang Zhang, Hailing Tu, Hongbin Zhao, et al.
Applied Physics Letters 99 (13) 132902 (2011)
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Electron-phonon interaction effects on the direct gap transitions of nanoscale Si films

V. K. Kamineni and A. C. Diebold
Applied Physics Letters 99 (15) 151903 (2011)
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Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators

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Applied Physics Letters 88 (13) 132111 (2006)
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Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

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Applied Physics Letters 99 (23) 232902 (2011)
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Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

Peter Broqvist, Audrius Alkauskas and Alfredo Pasquarello
Applied Physics Letters 92 (13) 132911 (2008)
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Single shot measurement of the lifetime of a trapped electron in the gate dielectric of a high-k field effect transistor

M. Ziaur Rahman Khan, D. G. Hasko, M. S. M. Saifullah and M. E. Welland
Applied Physics Letters 93 (19) 193501 (2008)
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Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon

S. Dueñas, H. Castán, H. García, et al.
Journal of Applied Physics 99 (5) 054902 (2006)
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Defect states in the high-dielectric-constant gate oxide HfSiO4

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Journal of Applied Physics 101 (2) 024101 (2007)
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Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

J. Müller, S. Knebel, D. Bräuhaus and U. Schröder
Applied Physics Letters 100 (8) 082905 (2012)
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Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces

V. V. Afanas’ev, A. Stesmans, L. F. Edge, et al.
Applied Physics Letters 88 (3) 032104 (2006)
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Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

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Applied Physics Letters 101 (10) 103506 (2012)
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Spectroscopic investigation of the electronic structure of thin atomic layer deposition HfO2 films

Silma Alberton Corrêa, Simone Brizzi and Dieter Schmeisser
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (1) 01A117 (2016)
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Homogeneous pinhole free 1 nm Al2O3 tunnel barriers on graphene

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Applied Physics Letters 101 (20) 203104 (2012)
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Synergistic effect of non-thermal plasma–catalysis hybrid system on methane complete oxidation over Pd-based catalysts

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Chemical Engineering Journal 259 761 (2015)
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Physics of Quantum Fluids

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Elastic Modulus of HfO2 Thin Film Grown by Atomic Layer Deposition with Wrinkle-based Measurement

Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics

Structural and band gaps studies of novel Al 2-x Hf x O 3 materials toward MOS applications

Model Surfaces Produced by Atomic Layer Deposition

On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs

Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression

How morphology determines the charge storage properties of Ge nanocrystals in HfO 2