The European Physical Journal Applied Physics (EPJ AP)

Effect of the Annealing Temperature of the Seed Layer on the Following Main Layer in Atomic‐Layer‐Deposited SrTiO 3 Thin Films

Sang Hyeon Kim, Woongkyu Lee, Cheol Hyun An, et al.
physica status solidi (RRL) – Rapid Research Letters 13 (5) 1800557 (2019)
DOI: 10.1002/pssr.201800557
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Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics

J. L. Everaert, E. Rosseel, J. Dekoster, et al.
Applied Physics Letters 96 (12) 122906 (2010)
DOI: 10.1063/1.3373920
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Investigating doping effects on high-κ metal gate stack for effective work function engineering

C. Leroux, S. Baudot, M. Charbonnier, et al.
Solid-State Electronics 88 21 (2013)
DOI: 10.1016/j.sse.2013.04.011
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Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications

Nelson Y. Garces, David J. Meyer, Virginia D. Wheeler, et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32 (3) 03D101 (2014)
DOI: 10.1116/1.4818254
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Evolutionary search for new high-kdielectric materials: methodology and applications to hafnia-based oxides

Qingfeng Zeng, Artem R. Oganov, Andriy O. Lyakhov, et al.
Acta Crystallographica Section C Structural Chemistry 70 (2) 76 (2014)
DOI: 10.1107/S2053229613027861
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Gallium Nitride Power Devices

Tianli Duan and Liu Zhihong
Gallium Nitride Power Devices 145 (2017)
DOI: 10.1201/9781315196626-7
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Structural and dielectric properties of oxynitride perovskite LaTiOxNy thin films

A. Ziani, C. Le Paven-Thivet, L. Le Gendre, et al.
Thin Solid Films 517 (2) 544 (2008)
DOI: 10.1016/j.tsf.2008.06.061
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Mechanism of photocatalytic activities in Cr-doped SrTiO3 under visible-light irradiation: an insight from hybrid density-functional calculations

Pakpoom Reunchan, Naoto Umezawa, Shuxin Ouyang and Jinhua Ye
Physical Chemistry Chemical Physics 14 (6) 1876 (2012)
DOI: 10.1039/c2cp23348g
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Electronic structure of an oxygen vacancy in Al2O3 from the results of Ab Initio quantum-chemical calculations and photoluminescence experiments

V. A. Pustovarov, V. Sh. Aliev, T. V. Perevalov, V. A. Gritsenko and A. P. Eliseev
Journal of Experimental and Theoretical Physics 111 (6) 989 (2010)
DOI: 10.1134/S1063776110120113
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Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

S. Gieraltowska, L. Wachnicki, B.S. Witkowski, M. Godlewski and E. Guziewicz
Thin Solid Films 520 (14) 4694 (2012)
DOI: 10.1016/j.tsf.2011.10.151
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Interlevel transitions in core–shell nanodots with dielectric environment

E.C. Niculescu
Superlattices and Microstructures 51 (6) 814 (2012)
DOI: 10.1016/j.spmi.2012.03.025
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Defects and their passivation in high K gate oxides

K. Tse and J. Robertson
Microelectronic Engineering 84 (4) 663 (2007)
DOI: 10.1016/j.mee.2006.12.009
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Fabrication of Releasable Single-Crystal Silicon-Metal Oxide Field-Effect Devices and Their Deterministic Assembly on Foreign Substrates

Hyun-Joong Chung, Tae-il Kim, Hoon-Sik Kim, et al.
Advanced Functional Materials 21 (16) 3029 (2011)
DOI: 10.1002/adfm.201100124
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Interfaces in {100} epitaxial heterostructures of perovskite oxides

J.-L. Maurice, D. Imhoff, J.-P. Contour and C. Colliex
Philosophical Magazine 86 (15) 2127 (2006)
DOI: 10.1080/14786430600640460
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Role of defect relaxation for trap-assisted tunneling in high-κthin films: A first-principles kinetic Monte Carlo study

Gunther Jegert, Dan Popescu, Paolo Lugli, et al.
Physical Review B 85 (4) 045303 (2012)
DOI: 10.1103/PhysRevB.85.045303
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Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces

Hyeon-Kyun Noh, Young Jun Oh and K.J. Chang
Physica B: Condensed Matter 407 (15) 2907 (2012)
DOI: 10.1016/j.physb.2011.08.079
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Induced-charge electroosmotic flow around dielectric particles in uniform electric field

Fang Zhang and Dongqing Li
Journal of Colloid and Interface Science 410 102 (2013)
DOI: 10.1016/j.jcis.2013.08.017
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Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

J. Charles Pravin, D. Nirmal, P. Prajoon and J. Ajayan
Physica E: Low-dimensional Systems and Nanostructures 83 95 (2016)
DOI: 10.1016/j.physe.2016.04.017
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Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies

Baikadi Pranay Kumar Reddy, Karri Babu Ravi Teja and Kavindra Kandpal
Semiconductors 52 (4) 420 (2018)
DOI: 10.1134/S1063782618040073
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Flexible IGZO Schottky diodes on paper

Jakub Kaczmarski, Michał A Borysiewicz, Krzysztof Piskorski, et al.
Semiconductor Science and Technology 33 (1) 015010 (2018)
DOI: 10.1088/1361-6641/aa9acb
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High-throughput identification of higher- κ dielectrics from an amorphous N 2 -doped HfO 2 –TiO 2 library

K.-S. Chang, W.-C. Lu, C.-Y. Wu and H.-C. Feng
Journal of Alloys and Compounds 615 386 (2014)
DOI: 10.1016/j.jallcom.2014.06.115
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Applications of Oxide Coatings in Photovoltaic Devices

Sonya Calnan
Coatings 4 (1) 162 (2014)
DOI: 10.3390/coatings4010162
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Nucleation and crystal growth in HfO2 thin films by UV nanosecond pulsed laser annealing

Toshiyuki Tabata
Applied Physics Express 13 (1) 015509 (2020)
DOI: 10.7567/1882-0786/ab5ce2
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Fine-tuning of the electro-optical switching behavior in indium tin oxide

Ivan A. Pshenichnyuk, Sergey S. Kosolobov and Vladimir P. Drachev
Physical Review B 103 (11) (2021)
DOI: 10.1103/PhysRevB.103.115404
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Surface-Plasmon Properties of Noble Metals with Exotic Phases

Okan K. Orhan and Mauricio Ponga
The Journal of Physical Chemistry C 125 (39) 21521 (2021)
DOI: 10.1021/acs.jpcc.1c06110
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Epitaxial integration of tetragonal BiFeO3 with silicon for nonvolatile memory applications

Jingbin Zhu, Zhigang Yin, Zhen Fu, et al.
Journal of Crystal Growth 459 178 (2017)
DOI: 10.1016/j.jcrysgro.2016.11.081
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Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors

Yuji Kiyota, Kenji Itaka, Yuta Iwashita, et al.
Japanese Journal of Applied Physics 50 (6) 06GH12 (2011)
DOI: 10.1143/JJAP.50.06GH12
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High-quality ZrO2/Si(001) thin films by a sol-gel process: Preparation and characterization

H. Döscher, G. Lilienkamp, P. Iskra, et al.
Journal of Applied Physics 107 (9) 094103 (2010)
DOI: 10.1063/1.3340830
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Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

O. Engström, B. Raeissi, S. Hall, et al.
Solid-State Electronics 51 (4) 622 (2007)
DOI: 10.1016/j.sse.2007.02.021
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Differences Between Charge Trapping States in Irradiated Nano-Crystalline HfO<formula formulatype="inline"><tex>$_{2}$</tex></formula> and Non-Crystalline Hf Silicates

G. Lucovsky, D. M. Fleetwood, S. Lee, et al.
IEEE Transactions on Nuclear Science 53 (6) 3644 (2006)
DOI: 10.1109/TNS.2006.886211
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Ultra-thin and Flat Mica as Gate Dielectric Layers

Chong Guan Low and Qing Zhang
Small 8 (14) 2178 (2012)
DOI: 10.1002/smll.201200300
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Hydrogen Barrier Layer Against Silicon Oxidation during Atomic Layer Deposition of Al[sub 2]O[sub 3] and HfO[sub 2]

Martin M. Frank, Yu Wang, Ming-Tsung Ho, et al.
Journal of The Electrochemical Society 154 (2) G44 (2007)
DOI: 10.1149/1.2405839
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Annealing effect on the formation of high-k dielectric in the W/ultrathin HfO2/Si-substrate system

V. I. Rudakov, E. A. Bogoyavlenskaya and Yu. I. Denisenko
Technical Physics Letters 38 (11) 982 (2012)
DOI: 10.1134/S1063785012110120
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Comparison of oxidized/nitrided Zr thin films on Si and SiC substrates

Yew Hoong Wong and Kuan Yew Cheong
Ceramics International 39 S475 (2013)
DOI: 10.1016/j.ceramint.2012.10.117
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Electronic band structure of zirconia and hafnia polymorphs from theGWperspective

Hong Jiang, Ricardo I. Gomez-Abal, Patrick Rinke and Matthias Scheffler
Physical Review B 81 (8) 085119 (2010)
DOI: 10.1103/PhysRevB.81.085119
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Growth temperature dependence of epitaxial Gd2O3 films on Si(111)

G. Niu, B. Vilquin, N. Baboux, et al.
Microelectronic Engineering 86 (7-9) 1700 (2009)
DOI: 10.1016/j.mee.2009.03.107
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Nonvolatile Memory With Nitrogen-Stabilized Cubic-Phase $\hbox{ZrO}_{2}$ as Charge-Trapping Layer

Yung-Hsien Wu, Lun-Lun Chen, Jia-Rong Wu, et al.
IEEE Electron Device Letters 31 (9) 1008 (2010)
DOI: 10.1109/LED.2010.2055530
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Layer structure variations of ultra-thin HfO2 films induced by post-deposition annealing

Wei-En Fu and Yong-Qing Chang
Applied Surface Science 257 (17) 7436 (2011)
DOI: 10.1016/j.apsusc.2011.02.132
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LanthanideN,N-Dimethylaminodiboranates as a New Class of Highly Volatile Chemical Vapor Deposition Precursors

Scott R. Daly, Do Young Kim and Gregory S. Girolami
Inorganic Chemistry 51 (13) 7050 (2012)
DOI: 10.1021/ic201852j
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Phase transformations in oxides induced by swift heavy ions

A. Benyagoub
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 245 (1) 225 (2006)
DOI: 10.1016/j.nimb.2005.11.106
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Investigations on electrical characteristics and reliability properties of MOS capacitors using HfAlOx on n-GaAs substrates

P.S. Das and Abhijit Biswas
Microelectronics Reliability 52 (1) 112 (2012)
DOI: 10.1016/j.microrel.2011.08.005
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Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix

S R C Pinto, M Buljan, L Marques, et al.
Nanotechnology 23 (40) 405605 (2012)
DOI: 10.1088/0957-4484/23/40/405605
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Measurement of Dipoles/Roll-Off /Work Functions by Coupling CV and IPE and Study of Their Dependence on Fabrication Process

Matthieu Charbonnier, Charles Leroux, V. Cosnier, et al.
IEEE Transactions on Electron Devices 57 (8) 1809 (2010)
DOI: 10.1109/TED.2010.2050957
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Cytotoxicity and physicochemical properties of hafnium oxide nanoparticles

James A. Field, Antonia Luna-Velasco, Scott A. Boitano, et al.
Chemosphere 84 (10) 1401 (2011)
DOI: 10.1016/j.chemosphere.2011.04.067
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Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

D. Zade, S. Sato, K. Kakushima, et al.
Microelectronics Reliability 51 (4) 746 (2011)
DOI: 10.1016/j.microrel.2010.11.004
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Improved interface properties of GaN metal-oxide-semiconductor device with non-polar plane and AlN passivation layer

Xian Wu, Renrong Liang, Lei Guo, et al.
Applied Physics Letters 109 (23) 232101 (2016)
DOI: 10.1063/1.4971352
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Effects of anodisation parameters on thin film properties: a review

Y. H. Wong, M. G. Affendy, S. K. Lau, et al.
Materials Science and Technology 33 (6) 699 (2017)
DOI: 10.1080/02670836.2016.1193654
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Study of the optoelectronic and piezoelectric properties of ZrO2 doped PVDF from quantum chemistry calculations

Albert Veved, Geh Wilson Ejuh and Noël Djongyang
Chinese Journal of Physics 63 213 (2020)
DOI: 10.1016/j.cjph.2019.10.022
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Thickness-dependent phase evolution and dielectric property of Hf0.5Zr0.5O2 thin films prepared with aqueous precursor

Yong Yan, Dayu Zhou, Chunxia Guo, et al.
Journal of Sol-Gel Science and Technology 77 (2) 430 (2016)
DOI: 10.1007/s10971-015-3871-5
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Defect calculations in semiconductors through a dielectric-dependent hybrid DFT functional: The case of oxygen vacancies in metal oxides

Matteo Gerosa, Carlo Enrico Bottani, Lucia Caramella, et al.
The Journal of Chemical Physics 143 (13) 134702 (2015)
DOI: 10.1063/1.4931805
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Lanthanide rare earth oxide thin film as an alternative gate oxide

Kian Heng Goh, A.S.M.A. Haseeb and Yew Hoong Wong
Materials Science in Semiconductor Processing 68 302 (2017)
DOI: 10.1016/j.mssp.2017.06.037
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Transport mechanisms of electrons and holes in dielectric films

K A Nasyrov and V A Gritsenko
Physics-Uspekhi 56 (10) 999 (2013)
DOI: 10.3367/UFNe.0183.201310h.1099
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Behavior of hydrogen in wide band gap oxides

K. Xiong, J. Robertson and S. J. Clark
Journal of Applied Physics 102 (8) 083710 (2007)
DOI: 10.1063/1.2798910
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Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y

Xianghan Xu, Fei-Ting Huang, Yubo Qi, et al.
Nature Materials (2021)
DOI: 10.1038/s41563-020-00897-x
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Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

Qi Xie, Davy Deduytsche, Marc Schaekers, et al.
Applied Physics Letters 97 (11) 112905 (2010)
DOI: 10.1063/1.3490710
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Two photon processes in ZnO quantum dots

Deepti Maikhuri, S.P. Purohit and K.C. Mathur
Superlattices and Microstructures 89 296 (2016)
DOI: 10.1016/j.spmi.2015.11.017
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Developments in High Temperature Corrosion and Protection of Materials

Z. Li and W. Gao
Developments in High Temperature Corrosion and Protection of Materials 521 (2008)
DOI: 10.1533/9781845694258.3.521
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Influence of oxygen vacancies on the dielectric properties of hafnia: First-principles calculations

Eric Cockayne
Physical Review B 75 (9) 094103 (2007)
DOI: 10.1103/PhysRevB.75.094103
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Characterization of Ta-Ti Thin Films by using a Scanning Droplet Cell in Combination with AC Linear Sweep Voltammetry

Mu Fan, Kirill Sliozberg, Fabio La Mantia, et al.
ChemElectroChem 1 (5) 903 (2014)
DOI: 10.1002/celc.201300153
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Electrical Characteristics of Oxidized∕Nitrided Zr Thin Film on Si

Yew Hoong Wong and Kuan Yew Cheong
Journal of The Electrochemical Society 158 (12) H1270 (2011)
DOI: 10.1149/2.106112jes
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High-k dielectrics for future generation memory devices (Invited Paper)

J.A. Kittl, K. Opsomer, M. Popovici, et al.
Microelectronic Engineering 86 (7-9) 1789 (2009)
DOI: 10.1016/j.mee.2009.03.045
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Interfacial structure of epitaxial SrTiO3on Si: experiments and simulations

X F Wang, Juan Wang, Quan Li, et al.
Journal of Physics D: Applied Physics 42 (8) 085409 (2009)
DOI: 10.1088/0022-3727/42/8/085409
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Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

J. Yu, G. Chen, C.X. Li, et al.
Sensors and Actuators A: Physical 172 (1) 9 (2011)
DOI: 10.1016/j.sna.2011.02.021
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MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

S Abermann, G Pozzovivo, J Kuzmik, et al.
Semiconductor Science and Technology 22 (12) 1272 (2007)
DOI: 10.1088/0268-1242/22/12/005
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Improvement on low-temperature deposited HfO2 film and interfacial layer by high-pressure oxygen treatment

Po-Chun Yang, Ting-Chang Chang, Shih-Ching Chen, et al.
Solid-State Electronics 62 (1) 128 (2011)
DOI: 10.1016/j.sse.2011.03.012
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Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1−x high-κ dielectrics on Si

B. B. Triplett, P. T. Chen, Y. Nishi, et al.
Journal of Applied Physics 101 (1) 013703 (2007)
DOI: 10.1063/1.2402974
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Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

Yung-Shao Shen, Kuen-Yi Chen, Po-Chun Chen, Teng-Chuan Chen and Yung-Hsien Wu
Scientific Reports 7 (1) 43659 (2017)
DOI: 10.1038/srep43659
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Inkjet‐Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal‐Oxide Thin‐Film Transistors with Low Voltage Operation

Liam Gillan, Shujie Li, Jouko Lahtinen, et al.
Advanced Materials Interfaces 8 (12) 2100728 (2021)
DOI: 10.1002/admi.202100728
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Performance Analysis for Tri-Gate Junction-Less FET by Employing Trioxide and Rectangular Core Shell (RCS) Architecture

M. Prasad and U. B. Mahadevaswamy
Wireless Personal Communications 118 (1) 619 (2021)
DOI: 10.1007/s11277-020-08035-1
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Physics of Quantum Fluids

Jacques Levrat, Georg Rossbach, Raphaël Butté and Nicolas Grandjean
Springer Series in Solid-State Sciences, Physics of Quantum Fluids 177 201 (2013)
DOI: 10.1007/978-3-642-37569-9_10
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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

B. Raeissi, J. Piscator, O. Engström, et al.
Solid-State Electronics 52 (9) 1274 (2008)
DOI: 10.1016/j.sse.2008.04.005
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Elastic Modulus of HfO2 Thin Film Grown by Atomic Layer Deposition with Wrinkle-based Measurement

Hyun-Ju Choi and Yongseong Kim
Bulletin of the Korean Chemical Society 38 (10) 1246 (2017)
DOI: 10.1002/bkcs.11251
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Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics

Kalya Shubhakar, Kin Leong Pey, Nagarajan Raghavan, et al.
Microelectronic Engineering 109 364 (2013)
DOI: 10.1016/j.mee.2013.03.021
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Structural and band gaps studies of novel Al 2-x Hf x O 3 materials toward MOS applications

Norlida Kamarulzaman, Annie Maria Mahat, Nurhanna Badar and Cezhou Zhao
Materials Chemistry and Physics (2018)
DOI: 10.1016/j.matchemphys.2018.03.024
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Model Surfaces Produced by Atomic Layer Deposition

Rick B. Walsh, Shaun C. Howard, Andrew Nelson, et al.
Chemistry Letters 41 (10) 1247 (2012)
DOI: 10.1246/cl.2012.1247
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On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs

Muhammad Nawaz
Active and Passive Electronic Components 2015 1 (2015)
DOI: 10.1155/2015/651527
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Chemically Deposited Nanocrystalline Metal Oxide Thin Films

A. C. Lokhande, V. C. Lokhande, D. S. Dhawale, et al.
Chemically Deposited Nanocrystalline Metal Oxide Thin Films 165 (2021)
DOI: 10.1007/978-3-030-68462-4_7
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Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression

Cheng-Yi Chang, Fu-Ming Pan, Jian-Siang Lin, et al.
Journal of Applied Physics 120 (23) 234501 (2016)
DOI: 10.1063/1.4972029
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How morphology determines the charge storage properties of Ge nanocrystals in HfO 2

A. Slav, C. Palade, A.M. Lepadatu, et al.
Scripta Materialia 113 135 (2016)
DOI: 10.1016/j.scriptamat.2015.10.028
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261 (2014)
DOI: 10.1017/CBO9780511794490.015
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Outlook and Challenges of Nano Devices, Sensors, and MEMS

Ling-Xuan Qian
Outlook and Challenges of Nano Devices, Sensors, and MEMS 3 (2017)
DOI: 10.1007/978-3-319-50824-5_1
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Frequency dispersion and dielectric relaxation in postdeposition annealed high-κ erbium oxide metal–oxide–semiconductor capacitors

Robin Khosla and Satinder K. Sharma
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 (1) 012201 (2018)
DOI: 10.1116/1.4995809
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Surface morphology of epitaxial lattice-matched Ba0.7Sr0.3O on Si(001) and vicinal Si(001)-4°[110] substrates

J. Zachariae and H. Pfnür
Surface Science 600 (13) 2785 (2006)
DOI: 10.1016/j.susc.2006.05.002
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High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

Daniel J. Lichtenwalner, Lin Cheng, Sarit Dhar, Anant Agarwal and John W. Palmour
Applied Physics Letters 105 (18) 182107 (2014)
DOI: 10.1063/1.4901259
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Atypical secondary electron emission yield curves of very thin SiO2 layers: Experiments and modeling

C. Rigoudy, K. Makasheva, M. Belhaj, S. Dadouch, G. Teyssedre and L. Boudou
Journal of Applied Physics 130 (13) 135305 (2021)
DOI: 10.1063/5.0056218
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Performance Limits of an Alternating Current Electroluminescent Device

Vivian Wang, Yingbo Zhao and Ali Javey
Advanced Materials 33 (2) 2005635 (2021)
DOI: 10.1002/adma.202005635
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Technological Innovation for Value Creation

Qian Chen, Henrique L. Gomes, Asal Kiazadeh, et al.
IFIP Advances in Information and Communication Technology, Technological Innovation for Value Creation 372 527 (2012)
DOI: 10.1007/978-3-642-28255-3_58
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Study on the dielectric properties of Al 2 O 3 /TiO 2 sub-nanometric laminates: effect of the bottom electrode and the total thickness

M Ben Elbahri, A Kahouli, B Mercey, et al.
Journal of Physics D: Applied Physics 51 (6) 065101 (2018)
DOI: 10.1088/1361-6463/aaa4df
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Hydrothermal Synthesis of Aqueous Sols of Nanocrystalline HfO2

G. S. Taran, A. E. Baranchikov, O. S. Ivanova and K. Yu. Zhizhin
Russian Journal of Inorganic Chemistry 65 (6) 800 (2020)
DOI: 10.1134/S0036023620060236
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Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM

Shih-Kai Lin, Cheng-Hsien Wu, Min-Chen Chen, et al.
Journal of Physics D: Applied Physics 53 (39) 395101 (2020)
DOI: 10.1088/1361-6463/ab92c5
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Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric

Zhi-Peng Ling, Jun-Tao Zhu, Xinke Liu and Kah-Wee Ang
Scientific Reports 6 (1) 26609 (2016)
DOI: 10.1038/srep26609
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The Structure and Characterization of ZrO2Thin Films Prepared by Liquid Delivery-MOCVD

Rui Li, Dan Xie, Mingming Zhang, et al.
Ferroelectrics 407 (1) 140 (2010)
DOI: 10.1080/00150193.2010.484760
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Influence of annealing temperatures on solution-processed AlInZnO thin film transistors

Yana Gao, Jianguo Lu, Jianhua Zhang and Xifeng Li
Journal of Alloys and Compounds 646 675 (2015)
DOI: 10.1016/j.jallcom.2015.06.049
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Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

Riikka L. Puurunen
Journal of Applied Physics 97 (12) 121301 (2005)
DOI: 10.1063/1.1940727
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Valence band offset of ReS2/BN heterojunction measured by X-ray photoelectron spectroscopy

Heyuan Huang, Wenge Yang, Shu'an Xing, et al.
Physics Letters A 392 127142 (2021)
DOI: 10.1016/j.physleta.2021.127142
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High performance organic nonvolatile memory transistors based on HfO2 and poly(α-methylstyrene) electret hybrid charge-trapping layers

W. C. Xu, H. X. He, X. S. Jing, et al.
Applied Physics Letters 111 (6) 063302 (2017)
DOI: 10.1063/1.4997748
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Comparison of resistive switching characteristics by using e-gun/sputter deposited SiOx film in W/SiOx/TiN structure and pH/creatinine sensing through iridium electrode

Sourav Roy, Anisha Roy, Rajeswar Panja, et al.
Journal of Alloys and Compounds 726 30 (2017)
DOI: 10.1016/j.jallcom.2017.07.304
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Variable RF capacitor based on a-Si:H (P-doped) multi-length cantilevers

Y Q Fu, S B Milne, J K Luo, et al.
Journal of Physics: Conference Series 34 788 (2006)
DOI: 10.1088/1742-6596/34/1/130
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Localized breakdown in dielectrics and macroscopic charge transport through the whole gate stack: A comparative study

Yi Zheng, Andrew T. S. Wee, Yi Ching Ong, et al.
Applied Physics Letters 92 (1) 012914 (2008)
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Plasma-Enhanced Methane Direct Conversion over Particle-Size Adjusted MOx/Al2O3 (M = Ti and Mg) Catalysts

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A Cost-Effective $\hbox{Ni/Nb}_{2}\hbox{O}_{5}\hbox{/} \hbox{Al}_{2}\hbox{O}_{3}\hbox{/}\hbox{Ni}_{2}\hbox{Si}$ Metal–Insulator–Metal Capacitor Processed at 300 $^{\circ}\hbox{C}$ Using Laser Annealing and a Fully Silicided Amorphous Silicon Bottom Electrode

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Effect of Postdeposition Annealing in Oxygen Ambient on Gallium-Nitride-Based MOS Capacitors With Cerium Oxide Gate

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Electrical Properties of Ge pMOSFETs With Ultrathin EOT HfO₂/AlOₓ/GeOₓ Gate-Stacks and NiGe Metal Source/Drain

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Ultra-thin hafnium oxide coatings grown by atomic layer deposition: hydrophobicity/hydrophilicity over time

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Hydrolysis of ZrCl4and HfCl4: The Initial Steps in the High-Temperature Oxidation of Metal Chlorides to Produce ZrO2and HfO2

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Junctionless Tunnel Field Effect Transistor

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A Dual-Gate Graphene FET Model for Circuit Simulation—SPICE Implementation

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Novel Photo-Defined Polymer-Enhanced Through-Silicon Vias for Silicon Interposers

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Effect of Space Radiation on the Leakage Current of MEMS Insulators

Steven T. Patton, Albert J. Frasca, Joseph W. Talnagi, et al.
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Electromagnetic Performance of RF NEMS Graphene Capacitive Switches

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IEEE Transactions on Nanotechnology 13 (1) 70 (2014)
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Improved Performance of Amorphous InGaZnO Thin-Film Transistor With $\hbox{Ta}_{2}\hbox{O}_{5}$ Gate Dielectric by Using La Incorporation

L. X. Qian, X. Z. Liu, C. Y. Han and P. T. Lai
IEEE Transactions on Device and Materials Reliability 14 (4) 1056 (2014)
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Impact of Uniaxial Strain on Random Telegraph Noise in High- $k$ /Metal Gate pMOSFETs

Po-Chin Huang, Jone F. Chen, Shih Chang Tsai, et al.
IEEE Transactions on Electron Devices 62 (3) 988 (2015)
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Intersublevel Photoabsorption and Photoelectric Processes in ZnO Quantum Dot Embedded in $\hbox{HfO}_{2}$ and AlN Matrices

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A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

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Physical Review B 102 (8) (2020)
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Applied Physics Letters 103 (2) 023113 (2013)
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Characterizing the Charge Trapping across Crystalline and Amorphous Si/SiO 2 /HfO 2 Stacks from First-Principle Calculations

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Study of molar ratio on the characteristics of metal–organic decomposed LaxCe1−xOz film as a metal reactive oxide on Si substrate

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IEEE Transactions on Electron Devices 65 (2) 507 (2018)
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Materials Today 16 (9) 312 (2013)
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Electron beam induced local crystallization of HfO2 nanopores for biosensing applications

Jiwook Shim, Jose A. Rivera and Rashid Bashir
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Applied Surface Science 369 377 (2016)
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Structural and Electrical Properties of Ta ax La(1−a)x O y Thin Films

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Lanthanum-Zirconate and Lanthanum-Aluminate Based High-κ Dielectric Stacks on Silicon Substrates

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Wattaka Sitaputra and Raphael Tsu
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UV-protection properties of electrospun polyacrylonitrile nanofibrous mats embedded with MgO and Al2O3 nanoparticles

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Ab initio simulation of the electronic structure of δ-Ta2O5 with oxygen vacancy and comparison with experiment

M. V. Ivanov, T. V. Perevalov, V. Sh. Aliev, V. A. Gritsenko and V. V. Kaichev
Journal of Experimental and Theoretical Physics 112 (6) 1035 (2011)
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M. W. Akram, Bahniman Ghosh, Punyasloka Bal and Partha Mondal
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Thermal oxidation and nitridation of sputtered Zr thin film on Si via N2O gas

Yew Hoong Wong and Kuan Yew Cheong
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Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics

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Microelectronics Reliability 53 (3) 499 (2013)
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Amorphous hafnium silicates: structural, electronic and dielectric properties

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Materials Science in Semiconductor Processing 13 (5-6) 303 (2010)
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A study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator

Gang Chen, Jerry Yu and P.T. Lai
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Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers

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Insulator–metal transition of VO2ultrathin films on silicon: evidence for an electronic origin by infrared spectroscopy

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BaTiO3Integration with Nanostructured Epitaxial (100), (110), and (111) Germanium for Multifunctional Devices

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Electro-optical modulation of a silicon waveguide with an “epsilon-near-zero” material

Alok P. Vasudev, Ju-Hyung Kang, Junghyun Park, Xiaoge Liu and Mark L. Brongersma
Optics Express 21 (22) 26387 (2013)
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Defect states in the high-dielectric-constant gate oxide LaAlO3

K. Xiong, J. Robertson and S. J. Clark
Applied Physics Letters 89 (2) 022907 (2006)
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Review on one-dimensional nanostructures prepared by electrospinning and atomic layer deposition

Imre Miklós Szilágyi and Dávidné Nagy
Journal of Physics: Conference Series 559 012010 (2014)
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Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction

M. Kuzmin, P. Laukkanen, M. Yasir, et al.
Physical Review B 92 (16) (2015)
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Thin Films of High-kOxides and ZnO for Transparent Electronic Devices

Sylwia Gieraltowska, Lukasz Wachnicki, Bartlomiej S. Witkowski, Elzbieta Guziewicz and Marek Godlewski
Chemical Vapor Deposition 19 (4-6) 213 (2013)
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Electronic properties of the Zr–ZrO2–SiO2–Si(100) gate stack structure

C. C. Fulton, G. Lucovsky and R. J. Nemanich
Journal of Applied Physics 99 (6) 063708 (2006)
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La2O3 Nano powders by mixture of fuels approach through chemical combustion for dielectric studies

G Nithesh Sharma, K Venkateswara Rao, V Sesha Sai Kumar, et al.
IOP Conference Series: Materials Science and Engineering 73 012099 (2015)
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Electrical and reliability characteristics of polycrystalline silicon thin-film transistors with high-κ Eu2O3 gate dielectrics

Li-Chen Yen, Chia-Wei Hu, Tsung-Yu Chiang, Tien-Sheng Chao and Tung-Ming Pan
Applied Physics Letters 100 (17) 173509 (2012)
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Ink-Jet-Printed Organic Thin-Film Transistors for Low-Voltage-Driven CMOS Circuits With Solution-Processed AlO_X Gate Insulator

Sung Hoon Kim, Sun Hee Lee, Youn Goo Kim and Jin Jang
IEEE Electron Device Letters 34 (2) 307 (2013)
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Nanoscale investigations: Surface potential of rare-earth oxide (Re2O3) thin films by kelvin probe force microscopy for next generation CMOS technology

Pawan Kumar, Robin Khosla and Satinder K. Sharma
Surfaces and Interfaces 4 69 (2016)
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Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers

V. V. Afanas’ev, A. Stesmans, G. Mavrou and A. Dimoulas
Applied Physics Letters 93 (10) 102115 (2008)
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Phase transition in sputtered HfO2 thin films: A qualitative Raman study

G.S. Belo, F. Nakagomi, A. Minko, et al.
Applied Surface Science 261 727 (2012)
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High dielectric material dependence of carbon nanotube field effect transistor considering non‐ballistic conduction

Nirjhor Tahmidur Rouf, Ashfaqul Haq Deep, Rusafa Binte Hassan, et al.
Micro & Nano Letters 9 (10) 620 (2014)
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First-principles calculations of electronic and optical properties of Mn-doped cubic HfO2

Yu-Fen Zhang, Hao Ren, Zhi-Tao Hou, Cheng Wang and Shuai Zhao
Journal of Alloys and Compounds 609 107 (2014)
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The initial atomic layer deposition of HfO2∕Si(001) as followed in situ by synchrotron radiation photoelectron spectroscopy

Massimo Tallarida, Konstantin Karavaev and Dieter Schmeisser
Journal of Applied Physics 104 (6) 064116 (2008)
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From amorphous phase separations to nanostructured materials in sol–gel derived ZrO2:Eu3+/SiO2 and ZnO/SiO2 composites

A. Gaudon, F. Lallet, A. Boulle, et al.
Journal of Non-Crystalline Solids 352 (21-22) 2152 (2006)
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Electron spin resonance observation of an interfacial GePb1-type defect in SiO2/(100)Si1−xGex/SiO2/Si heterostructures

A Stesmans, P Somers and V V Afanas’ev
Journal of Physics: Condensed Matter 21 (12) 122201 (2009)
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Electronic structure of bulk and defect α- and γ-Al2O3

T.V. Perevalov, A.V. Shaposhnikov and V.A. Gritsenko
Microelectronic Engineering 86 (7-9) 1915 (2009)
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Band alignment of atomic layer deposited (ZrO2)x(SiO2)1−x gate dielectrics on Si (100)

Dahlang Tahir, Eun Kyoung Lee, Suhk Kun Oh, et al.
Applied Physics Letters 94 (21) 212902 (2009)
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Characterization of Semiconductor Heterostructures and Nanostructures

Andre Stesmans and Valery V. Afanas'ev
Characterization of Semiconductor Heterostructures and Nanostructures 435 (2008)
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Morphology and Composition of Selected High-k Materials and Their Relevance to Dielectric Properties of Thin Films

J. Dąbrowski, G. Lippert, L. Oberbeck, et al.
Journal of The Electrochemical Society 155 (5) G97 (2008)
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Bilayer Organic–Inorganic Gate Dielectrics for High-Performance, Low-Voltage, Single-Walled Carbon Nanotube Thin-Film Transistors, Complementary Logic Gates, and p–n Diodes on Plastic Substrates

Q. Cao, M.-G. Xia, M. Shim and J. A. Rogers
Advanced Functional Materials 16 (18) 2355 (2006)
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Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures

Srikant Jayanti, Xiangyu Yang, Daniel J. Lichtenwalner and Veena Misra
Applied Physics Letters 96 (9) 092905 (2010)
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DIELECTRIC AND INTERFACE STABILITY OF LaSmO3 FILMS

WEITAO SU, QIUHUI ZHUANG, DEXUAN HUO and BIN LI
Surface Review and Letters 19 (06) 1250064 (2012)
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Thermal stability of thin ZrO2 films prepared by a sol-gel process on Si(001) substrates

H. Döscher, G. Lilienkamp, P. Iskra, M. Kazempoor and W. Daum
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28 (4) C5B5 (2010)
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AmorphousHfO2andHf1−xSixOvia a melt-and-quench scheme usingab initiomolecular dynamics

Wanderlã L. Scopel, Antônio J. R. da Silva and A. Fazzio
Physical Review B 77 (17) 172101 (2008)
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Remote phonon scattering in field-effect transistors with a high κ insulating layer

B. Laikhtman and P. M. Solomon
Journal of Applied Physics 103 (1) 014501 (2008)
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Floating Gate Memory with Biomineralized Nanodots Embedded in High-kGate Dielectric

Kosuke Ohara, Ichiro Yamashita, Toshitake Yaegashi, et al.
Applied Physics Express 2 (9) 095001 (2009)
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In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates

K. Devloo-Casier, J. Dendooven, K. F. Ludwig, et al.
Applied Physics Letters 98 (23) 231905 (2011)
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Investigation of forming-gas annealed CeO2 thin film on GaN

Hock Jin Quah, Kuan Yew Cheong, Zainuriah Hassan and Zainovia Lockman
Journal of Materials Science: Materials in Electronics 22 (6) 583 (2011)
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Organic Optoelectronics

Chengliang Wang, Lang Jiang and Wenping Hu
Organic Optoelectronics 95 (2013)
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Thickness dependence of the structural and dielectric properties of epitaxial ZrO2films grown by limited reaction sputtering

Y Zhou, K Sasaki, T Kawae and A Morimoto
Journal of Physics D: Applied Physics 42 (20) 205406 (2009)
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Hafnia-Silica Cryogels: Solvent-Assisted Textural and Catalytic Control in the Citronellal Cyclization

Ciril Jimeno, Jonathan Miras and Jordi Esquena
ChemCatChem 6 (9) 2626 (2014)
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Low-Operating-Voltage Pentacene-Based Transistors and Inverters With Solution-Processed Barium Zirconate Titanate Insulators

Chia-Yu Wei, Wen-Chieh Huang, Chih-Kai Yang, Yen-Yu Chang and Yeong-Her Wang
IEEE Electron Device Letters 32 (12) 1755 (2011)
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Study on a Metal–Insulator–Silicon Hydrogen Sensor With LaTiON as Gate Insulator

Jerry Yu, Gang Chen and Pui To Lai
IEEE Sensors Journal 13 (5) 1534 (2013)
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A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs

Sofia Johansson, Martin Berg, Karl-Magnus Persson and Erik Lind
IEEE Transactions on Electron Devices 60 (2) 776 (2013)
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Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness

Minhyeok Choe, Gunho Jo, Jongsun Maeng, et al.
Journal of Applied Physics 107 (3) 034504 (2010)
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High-mobility BaSnO3thin-film transistor with HfO2gate insulator

Young Mo Kim, Chulkwon Park, Useong Kim, Chanjong Ju and Kookrin Char
Applied Physics Express 9 (1) 011201 (2016)
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Organic Macromolecular High Dielectric Constant Materials: Synthesis, Characterization, and Applications

Meng Guo, Teruaki Hayakawa, Masa-aki Kakimoto and Theodore Goodson
The Journal of Physical Chemistry B 115 (46) 13419 (2011)
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Electrochemical and passive characterization of a beta type Ti45Zr38Al17 cast rod in nitric acid medium

J. Jayaraj, A. Ravi Shankar and U. Kamachi Mudali
Electrochimica Acta 85 210 (2012)
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Investigations on high-κ dielectrics for low threshold voltage and low leakage zinc oxide thin-film transistor, using material selection methodologies

Kavindra Kandpal and Navneet Gupta
Journal of Materials Science: Materials in Electronics 27 (6) 5972 (2016)
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Preparation and properties of BaTiO3/porous oxide composites

V. V. Sydorchuk, S. V. Khalameida, V. P. Klimenko, V. A. Mikheev and V. A. Zazhigalov
Inorganic Materials 48 (9) 925 (2012)
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Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications

Yogesh Goswami, Pranav Asthana and Bahniman Ghosh
Journal of Semiconductors 38 (5) 054002 (2017)
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Field-effect induced tunability in hyperbolic metamaterials

Georgia T. Papadakis and Harry A. Atwater
Physical Review B 92 (18) (2015)
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Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

Dominik Martin, Johannes Müller, Tony Schenk, et al.
Advanced Materials 26 (48) 8198 (2014)
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Method for disclosing invisible physical properties in metal−ferroelectric−insulator−semiconductor gate stacks

Shigeki Sakai, Wei Zhang and Mitsue Takahashi
Journal of Physics D: Applied Physics 50 (16) 165107 (2017)
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Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

Wei-En Fu, Chia-Wei Chang, Yong-Qing Chang, Chih-Kai Yao and Jiunn-Der Liao
Applied Surface Science 258 (22) 8974 (2012)
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Trap-assisted tunneling, capacitance–voltage characteristics, and surface properties of Sm2O3 thin film on Si substrate

Kian Heng Goh, A. S. M. A. Haseeb and Yew Hoong Wong
Journal of Materials Science: Materials in Electronics 28 (6) 4725 (2017)
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Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack

Mengmeng YANG, Hailing TU, Jun DU, et al.
Journal of Rare Earths 31 (4) 395 (2013)
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Atomic structure and thermally induced transformation of the crystalline BaO/Si(100) junction

M. Kuzmin, P. Laukkanen, M. P. J. Punkkinen, et al.
Physical Review B 90 (23) (2014)
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Energy band alignment at the nanoscale

Jonas Deuermeier, Elvira Fortunato, Rodrigo Martins and Andreas Klein
Applied Physics Letters 110 (5) 051603 (2017)
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Model approach to solving the inverse problem of X-ray reflectometry and its application to the study of the internal structure of hafnium oxide films

Yu. O. Volkov, I. V. Kozhevnikov, B. S. Roshchin, E. O. Filatova and V. E. Asadchikov
Crystallography Reports 58 (1) 160 (2013)
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A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices

Niladri Pratap Maity, Reshmi Maity, R.K. Thapa and Srimanta Baishya
Superlattices and Microstructures 95 24 (2016)
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Structural and optical characterization of Cr2O3 nanostructures: Evaluation of its dielectric properties

M. M. Abdullah, Fahd M. Rajab and Saleh M. Al-Abbas
AIP Advances 4 (2) 027121 (2014)
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Floating Gate Memory With Biomineralized Nanodots Embedded in $\hbox{HfO}_{2}$

Kosuke Ohara, Yosuke Tojo, Ichiro Yamashita, et al.
IEEE Transactions on Nanotechnology 10 (3) 576 (2011)
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Enhanced Capacitance of Composite Anodic ZrO2Films Comprising High Permittivity Oxide Nanocrystals and Highly Resistive Amorphous Oxide Matrix

Hiroki Habazaki, Shun Koyama, Yoshitaka Aoki, Norihito Sakaguchi and Shinji Nagata
ACS Applied Materials & Interfaces 3 (7) 2665 (2011)
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HfO[sub 2]∕Si interface formation in atomic layer deposition films: An in situ investigation

Massimo Tallarida, Konstantin Karavaev and Dieter Schmeisser
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27 (1) 300 (2009)
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Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon

Yi Zhao, Masahiro Toyama, Koji Kita, Kentaro Kyuno and Akira Toriumi
Applied Physics Letters 88 (7) 072904 (2006)
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Platinum-assisted post deposition annealing of the n-Ge/Y2O3interface

C Zimmermann, O Bethge, B Lutzer and E Bertagnolli
Semiconductor Science and Technology 31 (7) 075009 (2016)
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Study of Si kinetics in interfacial SiO2scavenging in HfO2gate stacks

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura and Akira Toriumi
Applied Physics Express 8 (6) 061304 (2015)
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Quantum-confined nanowires as vehicles for enhanced electrical transport

S Noor Mohammad
Nanotechnology 23 (28) 285707 (2012)
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An integrated high temperature environmental cell for atom probe tomography studies of gas-surface reactions: Instrumentation and results

S. Dumpala, S.R. Broderick, P.A.J. Bagot and K. Rajan
Ultramicroscopy 141 16 (2014)
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Designing graphene absorption in a multispectral plasmon-enhanced infrared detector

Michael D. Goldflam, Zhe Fei, Isaac Ruiz, et al.
Optics Express 25 (11) 12400 (2017)
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Physical and electrical characterization of atomic-layer-deposited Ru nanocrystals embedded into Al2O3 for memory applications

Min Zhang, Wei Chen, Shi-Jin Ding, et al.
Journal of Physics D: Applied Physics 41 (3) 032007 (2008)
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Shijie Wang, Yuanping Feng and Alfred C. H. Huan
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Reliability of La-Doped Hf-Based Dielectrics nMOSFETs

Chang Yong Kang, P.D. Kirsch, Byoung Hun Lee, Hsing-Huang Tseng and R. Jammy
IEEE Transactions on Device and Materials Reliability 9 (2) 171 (2009)
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Probing defects at interfaces and interlayers of low-dimensional Si/insulator (HfO2; LaAlO3) structures by electron spin resonance

A. Stesmans and V.V. Afanas’ev
Physica B: Condensed Matter 401-402 550 (2007)
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Internal Photoemission Spectroscopy

Valery V. Afanas’ev
Internal Photoemission Spectroscopy 255 (2014)
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Determining the Optimized Layer-by-Layer Film Architecture With Dendrimer/Carbon Nanotubes for Field-Effect Sensors

Marcos A. M. Sousa, Jose R. Siqueira, Andres Vercik, Michael J Schoning and Osvaldo N. Oliveira
IEEE Sensors Journal 17 (6) 1735 (2017)
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LCAO Calculations of (001) Surface Oxygen Vacancy Structure in Y-Doped BaZrO3

A. V. Bandura, R. A. Evarestov and D. D. Kuruch
Integrated Ferroelectrics 123 (1) 1 (2011)
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Atomic and electronic structure of gadolinium oxide

Timofey Viktorovich Perevalov, Andrey Evgenievich Dolbak, Vasilii Aleksandrovich Shvets, et al.
The European Physical Journal Applied Physics 65 (1) 10702 (2014)
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Simulation of Graphene Base Transistors With Bilayer Tunnel Oxide Barrier: Model Calibration and Performance Projection

Valerio Di Lecce, Antonio Gnudi, Elena Gnani, Susanna Reggiani and Giorgio Baccarani
IEEE Electron Device Letters 37 (11) 1489 (2016)
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Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- application

A. Fissel, M. Czernohorsky and H.J. Osten
Superlattices and Microstructures 40 (4-6) 551 (2006)
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Superiority of DFT+U with non-linear core correction for open-shell binary rare-earth metal oxides: a case study of native point defects in cerium oxides

Bolong Huang
Philosophical Magazine 94 (26) 3052 (2014)
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Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties

Shankar Swaminathan, Yun Sun, Piero Pianetta and Paul C. McIntyre
Journal of Applied Physics 110 (9) 094105 (2011)
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Characterization of Semiconductor Heterostructures and Nanostructures

Andre Stesmans and Valery V. Afanas’ev
Characterization of Semiconductor Heterostructures and Nanostructures 685 (2013)
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Electronic structure and defects of high dielectric constant gate oxide La2Hf2O7

D. Liu, K. Tse and J. Robertson
Applied Physics Letters 90 (6) 062901 (2007)
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Band Alignment at Molybdenum Disulphide/Boron Nitride/Aluminum Oxide Interfaces

Jennifer DiStefano, Yu-Chuan Lin, Joshua Robinson, et al.
Journal of Electronic Materials 45 (2) 983 (2016)
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Fabrication of precision integrated capacitors

Jisu Jiang and Paul A. Kohl
Thin Solid Films 634 15 (2017)
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Interface models and processing technologies for surface passivation and interface control in III–V semiconductor nanoelectronics

H. Hasegawa and M. Akazawa
Applied Surface Science 254 (24) 8005 (2008)
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Optimizing the internal electric field distribution of alternating current driven organic light-emitting devices for a reduced operating voltage

Markus Fröbel, Simone Hofmann, Karl Leo and Malte C. Gather
Applied Physics Letters 104 (7) 071105 (2014)
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Effects of oxygen deficiency in the sol–gel ZrOxfilm on the electrical properties of Au/ZrOx/n-type Si/In devices

Wei-Chung Chen, Yow-Jon Lin, Ya-Hui Chen and Hsing-Cheng Chang
Semiconductor Science and Technology 25 (5) 055003 (2010)
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Chemistry of surface nanostructures in lead precursor-rich PbZr0.52Ti0.48O3 sol–gel films

I. Gueye, G. Le Rhun, P. Gergaud, et al.
Applied Surface Science 363 21 (2016)
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Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN

Rathnait D. Long, Aryan Hazeghi, Marika Gunji, Yoshio Nishi and Paul C. McIntyre
Applied Physics Letters 101 (24) 241606 (2012)
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Integration of Amorphous $\hbox{Yb}_{2}\hbox{O}_{3}$ and Crystalline $\hbox{ZrTiO}_{4}$ as Gate Stack for Aggressively Scaled MOS Devices

Yung-Hsien Wu, Rong-Jhe Lyu, Min-Lin Wu, Lun-Lun Chen and Chia-Chun Lin
IEEE Electron Device Letters 33 (3) 426 (2012)
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Synthesis of germanium nanocrystals in hafnium aluminum oxide matrix

F. Zheng, H. G. Chew, W. K. Choi, J. X. Zhang and H. L. Seng
Journal of Applied Physics 101 (11) 114310 (2007)
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Cathodo- and photoluminescence increase in amorphous hafnium oxide under annealing in oxygen

E. V. Ivanova, M. V. Zamoryanskaya, V. A. Pustovarov, et al.
Journal of Experimental and Theoretical Physics 120 (4) 710 (2015)
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Solar water oxidation in sputter-deposited nanocrystalline WO3 photoanodes via tuning of Ar:O2 flow rate combinations

Siao Li Liew, Wei Wang, Surani Bin Dolmanan, Glen Tai Wei Goh and Dongzhi Chi
Materials Chemistry and Physics 143 (3) 1171 (2014)
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Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices

Ashwath Rao, Priyanka Chaurasia and B. R. Singh
Radiation Effects and Defects in Solids 171 (3-4) 187 (2016)
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Electrode effects on the conduction mechanisms in HfO2-based metal-insulator-metal capacitors

F. El Kamel, P. Gonon, C. Vallée and C. Jorel
Journal of Applied Physics 106 (6) 064508 (2009)
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Atomic layer deposition of HfO2 thin films using H2O2 as oxidant

Min-Jung Choi, Hyung-Ho Park, Doo Seok Jeong, et al.
Applied Surface Science 301 451 (2014)
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Activation of hole charge carriers and generation of electromotive force in gabbro blocks subjected to nonuniform loading

Akihiro Takeuchi and Toshiyasu Nagao
Journal of Geophysical Research: Solid Earth 118 (3) 915 (2013)
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Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

Jia Sun, Jie Jiang, Aixia Lu, Bin Zhou and Qing Wan
IEEE Transactions on Electron Devices 58 (3) 764 (2011)
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Improving dielectric performance in anodic aluminum oxide via detection and passivation of defect states

M. Mibus, C. Jensen, X. Hu, et al.
Applied Physics Letters 104 (24) 244103 (2014)
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Gate-Stack Engineering in $n$-Type Ultrascaled Si Nanowire Field-Effect Transistors

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Atomic layer deposited zirconium oxide electron injection layer for efficient organic light emitting diodes

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Organic Electronics 14 (1) 312 (2013)
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Structural and Electronic Properties of GaN (0001)/α-Al2O3(0001) Interface

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Advances in Condensed Matter Physics 2015 1 (2015)
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Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150 °C

Xiaoli Xu, Qingyu Cui, Yizheng Jin and Xiaojun Guo
Applied Physics Letters 101 (22) 222114 (2012)
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Optical properties and thermal stability of LaYbO3 ternary oxide for high-k dielectric application

Wei-tao Su, Li Yang and Bin Li
Applied Surface Science 257 (7) 2526 (2011)
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Analysis of Off-State Leakage Current Characteristics and Mechanisms of Nanoscale MOSFETs with a High- k Gate Dielectric

Hong-Xia Liu and Fei Ma
Chinese Physics Letters 29 (12) 127301 (2012)
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Electronic defects in LaAlO3

K. Xiong, J. Robertson and S.J. Clark
Microelectronic Engineering 85 (1) 65 (2008)
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Temperature dependence of electrical transport properties of La4BaCu5−xCoxO13+δconducting oxide thin films

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Reactively sputtered hafnium oxide on silicon dioxide: Structural and electrical properties

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White light emission from alternating current organic light-emitting devices using high frequency color-mixing

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physica status solidi (a) 210 (11) 2439 (2013)
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Optical susceptibilities in singly charged ZnO colloidal quantum dots embedded in different dielectric matrices

Zaiping Zeng, Emmanuel Paspalakis, Christos S. Garoufalis, Andreas F. Terzis and Sotirios Baskoutas
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Misfit point defects at the epitaxial Lu2O3/(111)Si interface revealed by electron spin resonance

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Applied Physics Letters 93 (10) 103505 (2008)
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Local Dielectric Property of Cubic, Tetragonal, and Monoclinic Hafnium Oxides

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Japanese Journal of Applied Physics 51 031101 (2012)
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Negative differential resistance in ultrathin Ge-on-insulator FETs

D Kazazis, A Zaslavsky, E Tutuc, N A Bojarczuk and S Guha
Semiconductor Science and Technology 22 (1) S1 (2007)
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A study of the structure of (HfO2) x (Al2O3)1−x /Si films by X-ray photoelectron spectroscopy

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Journal of Structural Chemistry 52 (3) 480 (2011)
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Mechanical properties of ultra-thin HfO2 films studied by nano scratches tests

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Model based precise analysis of the injection currents in Al/ZrO2/Al2O3/ZrO2/SiO2/Si structures for use in charge trapping non-volatile memory devices

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Materials Science in Semiconductor Processing 44 30 (2016)
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In situ characterization of initial growth of HfO2

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Oxygen vacancy estimation of high k metal gate using thermal dynamic model

H. L. Chang and M. S. Liang
Applied Physics Letters 97 (4) 041912 (2010)
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Electronic structure of α-Al2O3: Ab initio simulations and comparison with experiment

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JETP Letters 85 (3) 165 (2007)
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Gate leakage current partitioning in nanoscale double gate MOSFETs, using compact analytical model

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Solid-State Electronics 75 22 (2012)
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X-ray reflection spectroscopy of the HfO2/SiO2/Si system in the region of the O–K absorption edge

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Compositional, structural and electronic characteristics of HfO2 and HfSiO dielectrics prepared by radio frequency magnetron sputtering

Li-ping Feng, Zheng-tang Liu and Ya-ming Shen
Vacuum 83 (5) 902 (2009)
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Formation of hybrid hafnium oxide by applying sacrifacial silicon film

Chiung-Wei Lin, Bo-Shen Zheng and Jing-Wei Huang
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Influence of post deposition annealing on Y2O3-gated GaAs MOS capacitors and their reliability issues

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Microelectronic Engineering 88 (3) 282 (2011)
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Band offsets of high K gate oxides on high mobility semiconductors

J. Robertson and B. Falabretti
Materials Science and Engineering: B 135 (3) 267 (2006)
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Dielectric and insulating properties of SrTiO3/Si heterostructure controlled by cation concentration

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Science China Physics, Mechanics and Astronomy 56 (12) 2404 (2013)
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Growth and dielectric properties of tetragonal ZrO2films by limited reaction sputtering

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Tailoring resistive switching properties of TiO2with controlled incorporation of oxide nanoparticles

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Charge Trapping and Decay Mechanism in Post Deposition Annealed Er₂O₃ MOS Capacitors by Nanoscopic and Macroscopic Characterization

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Dielectrics in Electric Fields, Second Edition 289 (2016)
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New Precursors for the CVD of Zirconium and Hafnium Oxide Films

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Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3

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Technical Physics 59 (5) 711 (2014)
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Ab initio modeling of electronic and optical properties of hafnium silicates

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UV-protection and photocatalytic properties of electrospun polyacrylonitrile nanofibrous mats coated with TiO2 nanofilm via sol–gel

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Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition

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Changes in Electronic Structure of La[sub x]Al[sub y]O Films as a Function of Postdeposition Annealing Temperature

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Studies of the structural, electronic and dielectric properties of Ca1−xSrxTiO3

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Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium

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Accurate Calculation of Gate Tunneling Current in Double-Gate and Single-Gate SOI MOSFETs Through Gate Dielectric Stacks

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Hafnium zirconate gate dielectric for advanced gate stack applications

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Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric

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Stability of HfO2/SiOx/Si surficial films at ultralow oxygen activity

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Effects of plasma immersion ion nitridation on dielectric properties of HfO2

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Microencapsulation of Moisture-Sensitive CaS:Eu[sup 2+] Particles with Aluminum Oxide

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Oxygen vacancy in monoclinic HfO2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments

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Applied Physics Letters 89 (26) 262904 (2006)
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MOS Devices With High-κ (ZrO$_2$) $_x$(La $_2$O$_3$) $_{1-x}$ Alloy as Gate Dielectric Formed by Depositing ZrO $_2$/La$_2$O $_3$/ZrO$_2$ Laminate and Annealing

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Thin Solid Films 518 (15) 4290 (2010)
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Defects in Microelectronic Materials and Devices (2008)
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High temperature thermal stability of the HfO2/Ge (100) interface as a function of surface preparation studied by synchrotron radiation core level photoemission

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Electrochemical characterization of nanostructured Ti–24Nb–4Zr–8Sn alloy in 3.5% NaCl solution

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Current transport analysis of ZrO2 thin films: Effects of post-deposition annealing

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

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Electron-Related Phenomena at the $\hbox{TaN/Al}_{2} \hbox{O}_{3}$ Interface

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Analytical modeling of direct tunneling current through gate stacks for the determination of suitable high-kdielectrics for nanoscale double-gate MOSFETs

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Method to characterize dielectric properties of powdery substances

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Atomic layer deposition of scandium-based oxides

Laura Nyns, Judit G. Lisoni, Geert Van den Bosch, Sven Van Elshocht and Jan Van Houdt
physica status solidi (a) 211 (2) 409 (2014)
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Fabrication and Characterization of Polymer-Enhanced TSVs, Inductors, and Antennas for Mixed-Signal Silicon Interposer Platforms

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IEEE Transactions on Components, Packaging and Manufacturing Technology 6 (3) 455 (2016)
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Oxygen vacancy in Al2O3: Photoluminescence study and first-principle simulation

V.A. Pustovarov, T.V. Perevalov, V.A. Gritsenko, T.P. Smirnova and A.P. Yelisseyev
Thin Solid Films 519 (19) 6319 (2011)
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Passivation of oxygen vacancy states in HfO2 by nitrogen

K. Xiong, J. Robertson and S. J. Clark
Journal of Applied Physics 99 (4) 044105 (2006)
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Progress of High-k Dielectrics Applicable to SONOS-Type Nonvolatile Semiconductor Memories

Zhenjie Tang, Zhiguo Liu and Xinhua Zhu
Transactions on Electrical and Electronic Materials 11 (4) 155 (2010)
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Physics-based surface potential, electric field and drain current model of aδp+Si1–xGexgate–drain underlap nanoscale n-TFET

Rupam Goswami, Brinda Bhowmick and Srimanta Baishya
International Journal of Electronics 1 (2016)
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Thermal stability of amorphous LaScO3 films on silicon

L. F. Edge, D. G. Schlom, S. Rivillon, et al.
Applied Physics Letters 89 (6) 062902 (2006)
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Interface-controlled high dielectric constant Al2O3/TiOx nanolaminates with low loss and low leakage current density for new generation nanodevices

Geunhee Lee, Bo-Kuai Lai, Charudatta Phatak, Ram S. Katiyar and Orlando Auciello
Journal of Applied Physics 114 (2) 027001 (2013)
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Interfacial atomic structures, energetics and band offsets of Ge:ZrO2 interfaces

Koon-Yiu Tse and John Robertson
Journal of Applied Physics 100 (9) 093713 (2006)
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High-temperature thermal stability study of 1 nm Al2O3deposited on InAs surfaces investigated by synchrotron radiation based photoemission spectroscopy

Rajesh Kumar Chellappan, Durga Rao Gajula, David McNeill and Greg Hughes
Journal of Physics D: Applied Physics 47 (5) 055107 (2014)
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Band gaps and defect levels in functional oxides

J. Robertson, K. Xiong and S.J. Clark
Thin Solid Films 496 (1) 1 (2006)
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Interfacial and electrical properties of radio frequency sputtered ultra-thin TiO2 film for gate oxide applications

Madhuchhanda Nath and Asim Roy
Journal of Materials Science: Materials in Electronics 26 (11) 9107 (2015)
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High-K dielectrics for the gate stack

Jean-Pierre Locquet, Chiara Marchiori, Maryline Sousa, Jean Fompeyrine and Jin Won Seo
Journal of Applied Physics 100 (5) 051610 (2006)
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The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers

P. Thangadurai, W.D. Kaplan, V. Mikhelashvili and G. Eisenstein
Microelectronics Reliability 49 (7) 716 (2009)
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Formation of thin-film HfO2/Si(100) structures by high-frequency magnetron sputtering

V. I. Rudakov, E. A. Bogoyavlenskaya, Yu. I. Denisenko and V. V. Naumov
Russian Microelectronics 40 (6) 383 (2011)
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Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient

Yew Hoong Wong and Kuan Yew Cheong
Electronic Materials Letters 8 (1) 47 (2012)
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Control of the Dirac point in graphene by UV light

A. Yurgens, N. Lindvall, J. Sun, Y. Nam and Y. W. Park
JETP Letters 98 (11) 704 (2014)
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Electronic stopping force of 12C, 28Si and 63Cu ions in HfO2 and SiO2 dielectric films

M. Msimanga, C.A. Pineda-Vargas, T. Hlatshwayo, et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 322 54 (2014)
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CMUTs with high-K atomic layer deposition dielectric material insulation layer

Toby Xu, Coskun Tekes and F. Degertekin
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 61 (12) 2121 (2014)
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Deposition and post-deposition annealing of thin Y2O3 film on n-type Si in argon ambient

Hock Jin Quah and Kuan Yew Cheong
Materials Chemistry and Physics 130 (3) 1007 (2011)
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Comprehensive Semiconductor Science and Technology

J. Robertson
Comprehensive Semiconductor Science and Technology 132 (2011)
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Soft x-ray photoemission study of the thermal stability of the Al2O3/Ge (100) interface as a function of surface preparation

Rajesh Kumar Chellappan, Durga Rao Gajula, David McNeill and Greg Hughes
Journal of Applied Physics 114 (8) 084312 (2013)
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Electrical instability in LaLuO3 based metal–oxide–semiconductor capacitors and role of the metal electrodes

Rosario Rao and Fernanda Irrera
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 31 (1) 01A116 (2013)
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Radiation Induced Charge Trapping in Sputtered ${\rm ZrO}_{\rm 2} \!\! : \!\! {\rm N}$ Dielectric Thin Films on Silicon

Ashwath Rao, Joyline D'sa, Saurabh Goyal and B. R. Singh
IEEE Transactions on Nuclear Science 61 (4) 2397 (2014)
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Atomic and electronic structures of lutetium oxide Lu2O3

V. V. Kaichev, T. I. Asanova, S. B. Erenburg, et al.
Journal of Experimental and Theoretical Physics 116 (2) 323 (2013)
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A Thin-Film Transistor With High Drain Current Induced by a Trap-Assisted Electric Double Layer

Ankita Gangwar and Baquer Mazhari
IEEE Transactions on Electron Devices 63 (12) 4776 (2016)
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Ge-Based Nonvolatile Memory Formed on Si Substrate with Ge-Stabilized Tetragonal ZrO2 as Charge Trapping Layer

Yung-Hsien Wu, Jia-Rong Wu, Min-Lin Wu, Lun-Lun Chen and Chia-Chun Lin
Journal of The Electrochemical Society 158 (4) H410 (2011)
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Correlation between phase and optical properties of yttrium-doped hafnium oxide nanocrystalline thin films

A. Ortega, E.J. Rubio, K. Abhilash and C.V. Ramana
Optical Materials 35 (9) 1728 (2013)
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Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators

Yi Zhao, Koji Kita, Kentaro Kyuno and Akira Toriumi
Applied Physics Letters 94 (4) 042901 (2009)
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Trapped charge dynamics in a sol–gel based TiO2high-kgate dielectric silicon metal–oxide–semiconductor field effect transistor

M Ziaur Rahman Khan, D G Hasko, M S M Saifullah and M E Welland
Journal of Physics: Condensed Matter 21 (21) 215902 (2009)
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Ferroelectric-Gate Field Effect Transistor Memories

Mitsue Takahashi and Shigeki Sakai
Topics in Applied Physics, Ferroelectric-Gate Field Effect Transistor Memories 131 23 (2016)
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HfO2-assisted SiO2 reduction in HfO2/SiO2/Si stacks

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio and Akira Toriumi
Thin Solid Films 557 272 (2014)
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Effect of post-deposition annealing temperature on CeO2 thin film deposited on silicon substrate via RF magnetron sputtering technique

Soo Kiet Chuah, Kuan Yew Cheong, Zainovia Lockman and Zainuriah Hassan
Materials Science in Semiconductor Processing 14 (2) 101 (2011)
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Capacitance–voltage characteristics of sub-nanometric Al2O3 / TiO2 laminates: dielectric and interface charge densities

Abdelkader Kahouli, Marwa Ben Elbahri, Oleg Lebedev and Ulrike Lüders
Journal of Physics: Condensed Matter 29 (27) 275301 (2017)
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Oxygen deficiency defects in amorphous Al2O3

T. V. Perevalov, O. E. Tereshenko, V. A. Gritsenko, et al.
Journal of Applied Physics 108 (1) 013501 (2010)
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Titania/Alumina Bilayer Gate Dielectrics for Ge MOS Devices: Frequency- and Temperature-Dependent Electrical Characteristics

Shankar Swaminathan and Paul C. McIntyre
Electrochemical and Solid-State Letters 13 (9) G79 (2010)
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Migration of oxygen vacancy in HfO2 and across the HfO2∕SiO2 interface: A first-principles investigation

Nathalie Capron, Peter Broqvist and Alfredo Pasquarello
Applied Physics Letters 91 (19) 192905 (2007)
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Conduction and field induced degradation in thin ZrO2 films sputtered in nitrogen containing plasma on silicon

Ashwath Rao, Joyline D’sa, Saurabh Goyal and B. R. Singh
Journal of Materials Science: Materials in Electronics 25 (3) 1583 (2014)
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Analytical modeling of the gate tunneling leakage for the determination of adequate high-k dielectrics in double-gate SOI MOSFETs at the 22nm node

Ghader Darbandy, Romain Ritzenthaler, Francois Lime, et al.
Solid-State Electronics 54 (10) 1083 (2010)
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Novel photodefined polymer-embedded vias for silicon interposers

Paragkumar A Thadesar and Muhannad S Bakir
Journal of Micromechanics and Microengineering 23 (3) 035003 (2013)
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Electrochemical Mechanical Polishing of Copper with High Permittivity Abrasives

Weisi Li, Dongming Guo, Zhuji Jin, Zhe Wang and Zewei Yuan
Materials and Manufacturing Processes 28 (2) 207 (2013)
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Characterization of the interface between the Hf-based high-k thin film and the Si using spatially resolved electron energy-loss spectroscopy

X.F. Wang, Quan Li, P.F. Lee, J.Y. Dai and X.G. Gong
Micron 41 (1) 15 (2010)
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Nature and stability of the (100)Si∕LaAlO3 interface probed by paramagnetic defects

A. Stesmans, K. Clémer, V. V. Afanas’ev, L. F. Edge and D. G. Schlom
Applied Physics Letters 89 (11) 112121 (2006)
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Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs

Yang Liu, A. Shanware, L. Colombo and R. Dutton
IEEE Electron Device Letters 27 (6) 489 (2006)
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Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer

Kuniaki HASHIMOTO, Akio OHTA, Hideki MURAKAMI, Seiichiro HIGASHI and Seiichi MIYAZAKI
IEICE Transactions on Electronics E96.C (5) 674 (2013)
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First principles study of structural and electronic properties of cubic phase of ZrO2 and HfO2

Yong-Liang Yang, Xiao-Li Fan, Chong Liu and Run-Xin Ran
Physica B: Condensed Matter 434 7 (2014)
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Nanocrystalline LaYSrO films for liquid-crystal alignment via a solution process

Seon Yeong Kim, Hong-Gyu Park, Min-Jae Cho, Hae-Chang Jeong and Dae-Shik Seo
Liquid Crystals 41 (7) 940 (2014)
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Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO 2 and fabricated at low temperature

Joel Molina, Reydezel Torres, Alok Ranjan and Kin-Leong Pey
Materials Science in Semiconductor Processing 66 191 (2017)
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Ultrahigh resolution imaging of local structural distortions in intergrowth tungsten bronzes

A.I. Kirkland, J. Sloan and S. Haigh
Ultramicroscopy 107 (6-7) 501 (2007)
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Study on the surface erosion route to the fabrication of TiO2 hollow spheres

Liu Lei, Cui Yuming, Li Bo, Zhou Xingfu and Ding Weiping
Applied Surface Science 256 (8) 2596 (2010)
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First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si–SiO2–HfO2 stack

Peter Broqvist, Audrius Alkauskas, Julien Godet and Alfredo Pasquarello
Journal of Applied Physics 105 (6) 061603 (2009)
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Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

Shankar Swaminathan, Michael Shandalov, Yasuhiro Oshima and Paul C. McIntyre
Applied Physics Letters 96 (8) 082904 (2010)
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Photonics

Robert H. Lipson
Photonics 133 (2015)
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Understanding Structure and Stability of Monoclinic Zirconia Surfaces from First-Principles Calculations

Andrey S. Bazhenov and Karoliina Honkala
Topics in Catalysis 60 (6-7) 382 (2017)
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Band gaps and dielectric constants of amorphous hafnium silicates: A first-principles investigation

Peter Broqvist and Alfredo Pasquarello
Applied Physics Letters 90 (8) 082907 (2007)
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High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ${\rm ZrO}_{2}$ Gate Dielectric

Yana Gao, Xifeng Li, Longlong Chen, et al.
IEEE Electron Device Letters 35 (5) 554 (2014)
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Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy 263 (2008)
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Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

Vladimir Djara, Marilyne Sousa, Nikola Dordevic, et al.
Microelectronic Engineering 147 231 (2015)
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Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

Jiro Yota, Hong Shen and Ravi Ramanathan
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (1) 01A134 (2013)
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Optical studies of amorphous Ge nanostructures in Al2O3 produced by pulsed laser deposition

J. Martín-Sánchez, J. Toudert, R. Serna, A. de Andrés and J. García-López
Thin Solid Films 541 92 (2013)
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Nanoscale channel engineered double gate MOSFET for mixed signal applications using high-k dielectric

D Nirmal, P Vijayakumar, K Shruti and N Mohankumar
International Journal of Circuit Theory and Applications 41 (6) 608 (2013)
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Synthesis and Dielectric Studies of Monoclinic Nanosized Zirconia

I. Flavia Princess Nesamani, V. Lakshmi Prabha, Aswathy Paul and D. Nirmal
Advances in Condensed Matter Physics 2014 1 (2014)
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Bonding and interface states ofSi:HfO2andSi:ZrO2interfaces

P. W. Peacock, K. Xiong, K. Tse and J. Robertson
Physical Review B 73 (7) 075328 (2006)
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Dielectric constants of amorphous hafnium aluminates: First-principles study

Hiroyoshi Momida, Tomoyuki Hamada, Yoshiteru Takagi, et al.
Physical Review B 75 (19) 195105 (2007)
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BEEM studies on metal high K-dielectric HfO2 interfaces

Yi Zheng, Cedric Troadec, Andrew T S Wee, et al.
Journal of Physics: Conference Series 61 1347 (2007)
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Studies on Electrical Properties of Hybrid Polymeric Gate Dielectrics for Field Effect Transistors

Davoud Dastan, Suresh W. Gosavi and Nandu B. Chaure
Macromolecular Symposia 347 (1) 81 (2015)
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Characterization of dielectric layers grown at low temperature by atomic layer deposition

Sylwia Gieraltowska, Lukasz Wachnicki, Bartlomiej S. Witkowski, et al.
Thin Solid Films 577 97 (2015)
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High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics

Mazran Esro, George Vourlias, Christopher Somerton, William I. Milne and George Adamopoulos
Advanced Functional Materials 25 (1) 134 (2015)
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Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films

S. Dueñas, H. Castán, H. García, et al.
Journal of Non-Crystalline Solids 354 (2-9) 404 (2008)
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The atomic and electron structure of ZrO2

A. V. Shaposhnikov, D. V. Gritsenko, I. P. Petrenko, et al.
Journal of Experimental and Theoretical Physics 102 (5) 799 (2006)
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Effects of annealing time on the electrical properties of the Y2O3gate on silicon

Hock Jin Quah and Kuan Yew Cheong
Journal of Experimental Nanoscience 10 (1) 19 (2015)
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Comparative Study of Single and Double Gate All Around Cylindrical FET Structures for High-K Dielectric Materials

Rajveer Kaur and Balwinder Singh
Transactions on Electrical and Electronic Materials 22 (4) 509 (2021)
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Design of Grating Al2O3 Passivation Structure Optimized for High-Efficiency Cu(In,Ga)Se2 Solar Cells

Chan Hyeon Park, Jun Yong Kim, Shi-Joon Sung, Dae-Hwan Kim and Yun Seon Do
Sensors 21 (14) 4849 (2021)
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Industrial Chemistry of Oxides for Emerging Applications

Lech Pawłowski
Industrial Chemistry of Oxides for Emerging Applications 1 (2018)
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Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor

J. Charles Pravin, D. Nirmal, P. Prajoon, N. Mohan Kumar and J. Ajayan
Superlattices and Microstructures 104 470 (2017)
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Tunable proximity effects and topological superconductivity in ferromagnetic hybrid nanowires

Samuel D. Escribano, Elsa Prada, Yuval Oreg and Alfredo Levy Yeyati
Physical Review B 104 (4) (2021)
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Dielectric constant measurement of zeolite powders by time-domain reflectometry

Minwei Sun, Wolfgang Maichen, Ramdas Pophale, et al.
Microporous and Mesoporous Materials 123 (1-3) 10 (2009)
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Multi-petahertz electron interference in Cr:Al2O3 solid-state material

Hiroki Mashiko, Yuta Chisuga, Ikufumi Katayama, et al.
Nature Communications 9 (1) (2018)
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Photonic curing of sol–gel derived HfO2 dielectrics for organic field-effect transistors

Kornelius Tetzner, Kurt A. Schroder and Karlheinz Bock
Ceramics International 40 (10) 15753 (2014)
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Intrinsically ionic conductive cellulose nanopapers applied as all solid dielectrics for low voltage organic transistors

Shilei Dai, Yingli Chu, Dapeng Liu, et al.
Nature Communications 9 (1) (2018)
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Trapping in GdSiO high-k films

R. Rao, R. Simoncini, H. D. B. Gottlob, M. Schmidt and F. Irrera
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29 (1) 01A902 (2011)
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Computed and Experimental Absorption Spectra of the Perovskite CH3NH3PbI3

Xi Zhu, Haibin Su, Rudolph A. Marcus and Maria E. Michel-Beyerle
The Journal of Physical Chemistry Letters 5 (17) 3061 (2014)
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Impact of ultrathin Al2O3 interlayer on thermal stability and leakage current properties of TiO2/Al2O3 stacking dielectrics

Hong-Bo Wang, Da-Yan Ma, Fei Ma and Ke-Wei Xu
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 30 (4) 040601 (2012)
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Operation Characteristics of Gate-All-Around Junctionless Flash Memory Devices With Si₃N₄/ZrO-Based Stacked Trapping Layer

Hsin-Kai Fang, Kuei-Shu Chang-Liao, Chia-Hsin Cheng, et al.
IEEE Transactions on Electron Devices 67 (9) 3626 (2020)
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Silicon electro-optic modulator based on an ITO-integrated tunable directional coupler

Jin-Soo Kim and Jin Tae Kim
Journal of Physics D: Applied Physics 49 (7) 075101 (2016)
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Classical over-the-barrier model for neutralization of highly charged ions above thin dielectric films

R. E. Lake, C. E. Sosolik and J. M. Pomeroy
Physical Review A 87 (6) (2013)
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Bound and resonant impurity states in a narrow gapped armchair graphene nanoribbon

B. S. Monozon and P. Schmelcher
Physical Review B 86 (24) (2012)
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MgZnO Thin Film Transistors on Glass With Blocking Voltage of 900 V

Yuxuan Li, Navila Alim, Wen-Chiang Hong, et al.
IEEE Electron Device Letters 41 (9) 1352 (2020)
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How stress can reduce dissipation in glasses

Jiansheng Wu and Clare C. Yu
Physical Review B 84 (17) 174109 (2011)
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Nontrigonal Ge dangling bond interface defect in condensation-grown(100)Si1−xGex/SiO2

A. Stesmans, P. Somers and V. V. Afanas’ev
Physical Review B 79 (19) 195301 (2009)
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Electrostatic Modulation of the Superfluid Density in an UltrathinLa2−xSrxCuO4Film

A. Rüfenacht, J.-P. Locquet, J. Fompeyrine, D. Caimi and P. Martinoli
Physical Review Letters 96 (22) 227002 (2006)
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Mechanism of the monoclinic-to-tetragonal phase transition induced in zirconia and hafnia by swift heavy ions

Abdenacer Benyagoub
Physical Review B 72 (9) 094114 (2005)
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Advances in Electronics, Communication and Computing

Bhubon Chandra Mech and Jitendra Kumar
Lecture Notes in Electrical Engineering, Advances in Electronics, Communication and Computing 443 415 (2018)
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Al2O3 and HfO2 Atomic Layers Deposited in Single and Multilayer Configurations on Titanium and on Stainless Steel for Biomedical Applications

Ivan Spajić, Ehsan Rahimi, Maria Lekka, Ruben Offoiach, Lorenzo Fedrizzi and Ingrid Milošev
Journal of The Electrochemical Society 168 (7) 071510 (2021)
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Silizium-Halbleitertechnologie

Ulrich Hilleringmann
Silizium-Halbleitertechnologie 177 (2019)
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Prospects and challenges of perovskite type transparent conductive oxides in photovoltaic applications. Part II – Synthesis and deposition

Muhammad Arif Riza, Mohd Adib Ibrahim, Ubani Charles Ahamefula, et al.
Solar Energy 139 309 (2016)
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Effect of annealing temperature on electrical properties of Al/ZrO2/p-Si MOS capacitor

Amit Singh and Sanjai Singh
Ferroelectrics Letters Section 48 (1-3) 40 (2021)
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Unipolar resistive switching characteristics of pnictogen oxide films: Case study of Sb2O5

Youngbae Ahn, Seung Wook Ryu, Jong Ho Lee, et al.
Journal of Applied Physics 112 (10) 104105 (2012)
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Implementation of Low-Power Electronic Devices Using Solution-Processed Tantalum Pentoxide Dielectric

Jungwoo Heo, Song Yi Park, Jae Won Kim, et al.
Advanced Functional Materials 28 (28) 1704215 (2018)
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First-principles study on leakage current caused by oxygen vacancies at HfO2/SiO2/Si interface

Kensuke Takagi and Tomoya Ono
Japanese Journal of Applied Physics 57 (6) 066501 (2018)
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Electron spin resonance features of the Ge Pb1 dangling bond defect in condensation-grown (100)Si/SiO2/Si1−xGex/SiO2 heterostructures

P. Somers, A. Stesmans, L. Souriau and V. V. Afanas’ev
Journal of Applied Physics 112 (7) 074501 (2012)
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Stress and texture development during sputtering of yttria, zirconia, and yttria stabilized zirconia films on Si substrates

K. V. L. V. Narayanachari and Srinivasan Raghavan
Journal of Applied Physics 112 (7) 074910 (2012)
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Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode

Khaled Humood, Sueda Saylan, Maguy Abi Jaoude, Baker Mohammad and Florent Ravaux
Materials Science and Engineering: B 271 115267 (2021)
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Handbook of Thin Film Deposition

Shahab Siddiqui, Takashi Ando, Rajan K. Pandey and Dominic Schepis
Handbook of Thin Film Deposition 107 (2018)
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Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations

M. Badylevich, S. Shamuilia, V. V. Afanas’ev, et al.
Applied Physics Letters 90 (25) 252101 (2007)
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Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

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First principle study of single electron transistor based on metal-organic complex of dibenzothiophene

Anu, Anurag Srivastava and Mohd. Shahid Khan
Organic Electronics 53 227 (2018)
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Crystalline phase dependent electrical properties of Mg incorporated tetragonal phase stabilized ZrO 2 high-κ dielectric layer in Si based MOS capacitors

J. Udaya Bhanu, A. Amutha, G. Ramesh Babu, B. Sundaravel and P. Thangadurai
Materials Science in Semiconductor Processing 81 7 (2018)
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Impact of encapsulation method on the adsorbate induced electrical instability of monolayer graphene

Sırrı Batuhan Kalkan, Alper Yanilmaz and Cem Çelebi
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Design and analysis of ultra-thin dielectric film embedded nanoscale double-gate MOSFETs for boosting logic performance

Debapriya Roy and Abhijit Biswas
AEU - International Journal of Electronics and Communications 131 153614 (2021)
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Defect correlated with positive charge trapping in functional HfO 2 layers on (100)Si revealed by electron spin resonance: Evidence for oxygen vacancy?

A. Stesmans and V.V. Afanas'ev
Microelectronic Engineering 178 112 (2017)
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The peculiarities of light absorption and light emission in Cu-doped Y-stabilized ZrO2 nanopowders

N. Korsunska, M. Baran, V. Papusha, et al.
Applied Nanoscience 9 (5) 965 (2019)
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Controllable P‐ and N‐Type Conversion of MoTe 2 via Oxide Interfacial Layer for Logic Circuits

Yong Ju Park, Ajit K. Katiyar, Anh Tuan Hoang and Jong‐Hyun Ahn
Small 15 (28) 1901772 (2019)
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Improved reliability of breakdown voltage measurement of yttrium oxide coatings by plasma spray

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Ceramics International 45 (17) 22169 (2019)
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Depth resolved band alignments of ultrathin TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 dynamic random access memory capacitors

Sang Yeon Lee, Jaewan Chang, Younsoo Kim, et al.
Applied Physics Letters 105 (20) 201603 (2014)
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Interface formation energy, bonding, energy band alignment in α-NaYF 4 related core shell models: For future multi-layer core shell luminescence materials

Bolong HUANG, Hao DONG, Ka-Leung Wong, Lingdong SUN and Chunhua YAN
Journal of Rare Earths 35 (4) 315 (2017)
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Growth of epitaxial strontium titanate films on germanium substrates using pulsed laser deposition

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Applied Surface Science 542 148601 (2021)
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Electrical Atomic Force Microscopy for Nanoelectronics

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NanoScience and Technology, Electrical Atomic Force Microscopy for Nanoelectronics 29 (2019)
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β-Ga2O3-based metal–oxide–semiconductor photodiodes with HfO2 as oxide

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Applied Physics Express 11 (11) 112202 (2018)
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Defect-Free Copolymer Gate Dielectrics for Gating MoS2 Transistors

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The Journal of Physical Chemistry C 122 (23) 12193 (2018)
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Conduction mechanisms responsible for leakage currents in RF sputtered HfO2 high-κ gate-oxide thin film MOS capacitors

J. Udaya Bhanu, Mohammed Aminul Islam and P. Thangadurai
Materials Science and Engineering: B 265 114999 (2021)
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Simulation study of gated nanowire InAs/Si Hetero p channel TFET and effects of interface trap

H. Bijo Joseph, Sankalp Kumar Singh, R.M. Hariharan, Yusuf Tarauni and D. John Thiruvadigal
Materials Science in Semiconductor Processing 103 104605 (2019)
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Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric

Jingping Xu, Ming Wen, Xinyuan Zhao, et al.
Nanotechnology 29 (34) 345201 (2018)
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Charge-Trapping Non-Volatile Memories

E. Verrelli and D. Tsoukalas
Charge-Trapping Non-Volatile Memories 157 (2017)
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Coulomb-engineered heterojunctions and dynamical screening in transition metal dichalcogenide monolayers

C. Steinke, T. O. Wehling and M. Rösner
Physical Review B 102 (11) (2020)
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Quantum Dot Channel (QDC) Field Effect Transistors (FETs) Configured as Floating Gate Nonvolatile Memories (NVMs)

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International Journal of High Speed Electronics and Systems 26 (03) 1740015 (2017)
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Star polymer–TiO2 nanohybrids to effectively modify the surface of PMMA dielectric layers for solution processable OFETs

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Quantitative Analysis of Shape-Sensitive Interaction of a Charged Nanoplate and a Charged Nanowire

Orion Ciftja
Nano 10 (08) 1550114 (2015)
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Effects of annealing on electrical performance of multilayer MoS2transistors with atomic layer deposited HfO2gate dielectric

Ming Wen, Jingping Xu, Lu Liu, Pui-To Lai and Wing-Man Tang
Applied Physics Express 9 (9) 095202 (2016)
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Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

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PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases

David Zanders, Engin Ciftyurek, Ersoy Subaşı, Niklas Huster, Claudia Bock, Aleksander Kostka, Detlef Rogalla, Klaus Schierbaum and Anjana Devi
ACS Applied Materials & Interfaces 11 (31) 28407 (2019)
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Band alignment and interfacial chemical structure of the HfLaO/InGaZnO4 heterojunction investigated by x-ray photoelectron spectroscopy

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Journal of Physics D: Applied Physics 50 (14) 145106 (2017)
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Effects of post-deposition annealing time in oxygen ambient on Y2O3 film deposited on silicon substrate

H. J. Quah and K. Y. Cheong
Materials Research Innovations 18 (sup6) S6-495 (2014)
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Impact of oxygen vacancies on monoclinic hafnium oxide and band alignment with semiconductors

Jibao Wu
Materials Today Communications 25 101482 (2020)
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Junctionless Tunnel Field Effect Transistor with Nonuniform Doping

Yogesh Goswami, Pranav Asthana, Shibir Basak and Bahniman Ghosh
International Journal of Nanoscience 14 (03) 1450025 (2015)
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Plasma-enhanced atomic layer-deposited La2O3 ultra-thin films on Si and 6H–SiC: a comparative study

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Vladimir A. Gritsenko, Timofey V. Perevalov and Damir R. Islamov
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Nanometer-Scale Wetting of the Silicon Surface by Its Equilibrium Oxide

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Deep and fast free-space electro-absorption modulation in a mobility-independent graphene-loaded Bragg resonator

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Applied Physics Letters 113 (1) 011102 (2018)
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Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta2O5/Si interface

Ashwath Rao, Ankita Verma and B.R. Singh
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Correlated Insulating States and Transport Signature of Superconductivity in Twisted Trilayer Graphene Superlattices

Xi Zhang, Kan-Ting Tsai, Ziyan Zhu, Wei Ren, Yujie Luo, Stephen Carr, Mitchell Luskin, Efthimios Kaxiras and Ke Wang
Physical Review Letters 127 (16) (2021)
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A new grounded lamination gate (GLG) for diminished fringe-capacitance effects in high-/spl kappa/ gate-dielectric MOSFETs

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IEEE Transactions on Electron Devices 53 (10) 2578 (2006)
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Channel Hot-Carrier Degradation in Short-Channel Transistors With High- $k$/Metal Gate Stacks

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IEEE Transactions on Device and Materials Reliability 9 (3) 425 (2009)
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Nonlinear Optical Properties of Si Nanodot in ${\rm Al}_{2}{\rm O}_{3}$ Matrix

Anchala, Shiv Prasad Purohit and Kailash Chandra Mathur
IEEE Journal of Quantum Electronics 48 (5) 628 (2012)
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Auger electron spectroscopy study of semiconductor surfaces: Effect of cleaning in inert atmosphere

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Electrically Polarized Biomaterials

Syed A. M. Tofail and Joanna Bauer
Advanced Materials 28 (27) 5470 (2016)
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Transparent conducting oxides for electro-optical plasmonic modulators

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Nanophotonics 4 (1) (2015)
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Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics

K.C. Lin, P.C. Juan, C.H. Liu, M.C. Wang and C.H. Chou
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Effects of the dielectric properties of the ceramic–solvent interface on the binding of proteins to oxide ceramics: a non-local electrostatic approach

Alexander I Rubinstein, Renat F Sabirianov and Fereydoon Namavar
Nanotechnology 27 (41) 415703 (2016)
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Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories

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Physical and electrical properties of thermal oxidized Sm2O3 gate oxide thin film on Si substrate: Influence of oxidation durations

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Thin Solid Films 606 80 (2016)
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Interface and electrical properties of ultra-thin HfO2 film grown by radio frequency sputtering

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Bhola N. Pal, Bal Mukund Dhar, Kevin C. See and Howard E. Katz
Nature Materials 8 (11) 898 (2009)
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Investigation of high-kyttrium copper titanate thin films as alternative gate dielectrics

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Computation of Dielectric Response in Molecular Solids for High Capacitance Organic Dielectrics

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Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

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Applied Physics Letters 104 (8) 082908 (2014)
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A Comparative Study of Nano-SiO2 and Nano-TiO2 Fillers on Proton Conductivity and Dielectric Response of a Silicotungstic Acid–H3PO4–Poly(vinyl alcohol) Polymer Electrolyte

Han Gao and Keryn Lian
ACS Applied Materials & Interfaces 6 (1) 464 (2014)
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Dielectric Engineering of Nanostructured Layers to Control the Transport of Injected Charges in Thin Dielectrics

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IEEE Transactions on Nanotechnology 15 (6) 839 (2016)
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A Voltage-Controlled Oscillator Using Variable Capacitors with a Thin Dielectric Electrolyte Film

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The structure of the SiO2∕Si(100) interface from a restraint-free search using computer simulations

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Applied Physics Letters 88 (1) 012101 (2006)
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OPTICAL VIBRATION MODES IN SPHERICAL CORE-SHELL QUANTUM DOTS

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Improving the performance of graphene nanoribbon field-effect transistors by using lanthanum aluminate as the gate dielectric

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Probing the properties of atomic layer deposited ZrO2 films on p-Germanium substrates

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (1) 01A126 (2013)
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Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate

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Journal of Applied Physics 113 (7) 074503 (2013)
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Reduction of interfacial SiO2 at HfO2/Si interface with Ta2O5 cap

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Journal of Applied Physics 114 (1) 014106 (2013)
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Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

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Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

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Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiOx/W cross-point structure

Subhranu Samanta, Xiao Gong, Panpan Zhang, Kaizhen Han and Xuanyao Fong
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Applied Physics Letters 103 (19) 191601 (2013)
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Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses

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Applied Physics Letters 103 (18) 183502 (2013)
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Investigation of the gate oxide leakage current of low temperature formed hafnium oxide films

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Journal of Applied Physics 113 (11) 114103 (2013)
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Band offsets of nitrided ultrathin hafnium silicate films

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Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics

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Applied Physics Letters 98 (3) 032108 (2011)
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Applied Physics Letters 98 (25) 252903 (2011)
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Atomic and electronic structure of amorphous and crystalline hafnium oxide: X-ray photoelectron spectroscopy and density functional calculations

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Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices

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Applied Physics Letters 101 (23) 232907 (2012)
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Hot electron transport in Au–HfO2–SiO2–Si structures studied by ballistic electron emission spectroscopy

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Applied Physics Letters 90 (14) 142915 (2007)
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Effect of ionic substitutions on the structure and dielectric properties of hafnia: A first principles study

Eric Cockayne
Journal of Applied Physics 103 (8) 084103 (2008)
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Reduced electron back-injection in Al2O3/AlOx/Al2O3/graphene charge-trap memory devices

Sejoon Lee, Emil B. Song, Sung Min Kim, et al.
Applied Physics Letters 101 (24) 243109 (2012)
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Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

O. Engström, B. Raeissi and J. Piscator
Journal of Applied Physics 103 (10) 104101 (2008)
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Control of interfacial silicate between HfO2 and Si by high concentration ozone

L. Wang, K. Xue, J. B. Xu, A. P. Huang and Paul K. Chu
Applied Physics Letters 88 (7) 072903 (2006)
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Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide

R. Driad, R. E. Sah, R. Schmidt and L. Kirste
Applied Physics Letters 100 (1) 014102 (2012)
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Structural and dielectric properties of epitaxial Sm2O3 thin films

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Applied Physics Letters 92 (6) 062905 (2008)
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Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on InP substrates

Xinqiang Zhang, Hailing Tu, Hongbin Zhao, et al.
Applied Physics Letters 99 (13) 132902 (2011)
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Electron-phonon interaction effects on the direct gap transitions of nanoscale Si films

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Applied Physics Letters 99 (15) 151903 (2011)
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Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators

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Applied Physics Letters 88 (13) 132111 (2006)
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Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

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Applied Physics Letters 99 (23) 232902 (2011)
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Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

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Applied Physics Letters 92 (13) 132911 (2008)
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Hafnium oxide gate dielectrics on sulfur-passivated germanium

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Applied Physics Letters 89 (11) 112905 (2006)
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Single shot measurement of the lifetime of a trapped electron in the gate dielectric of a high-k field effect transistor

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Applied Physics Letters 93 (19) 193501 (2008)
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Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon

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Journal of Applied Physics 99 (5) 054902 (2006)
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Defect states in the high-dielectric-constant gate oxide HfSiO4

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Journal of Applied Physics 101 (2) 024101 (2007)
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Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

J. Müller, S. Knebel, D. Bräuhaus and U. Schröder
Applied Physics Letters 100 (8) 082905 (2012)
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Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces

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Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

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Applied Physics Letters 101 (10) 103506 (2012)
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Spectroscopic investigation of the electronic structure of thin atomic layer deposition HfO2 films

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (1) 01A117 (2016)
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Homogeneous pinhole free 1 nm Al2O3 tunnel barriers on graphene

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Applied Physics Letters 101 (20) 203104 (2012)
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Synergistic effect of non-thermal plasma–catalysis hybrid system on methane complete oxidation over Pd-based catalysts

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Chemical Engineering Journal 259 761 (2015)
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Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers

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Applied Physics Letters 100 (10) 102111 (2012)
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Spectroscopic and electrical properties of atomic layer deposition Al2O3 gate dielectric on surface pretreated Si substrate

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Internal photoemission at interfaces of high-κ insulators with semiconductors and metals

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Room Temperature Antiferromagnetic Ordering of Nanocrystalline Tb1.90Ni0.10O3

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Experimental investigation of the electrical properties of atomic layer deposited hafnium-rich silicate films on n-type silicon

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Ideal p–n Diodes from Single-Walled Carbon Nanotubes for Use in Solar Cells: Beating the Detailed Balance Limit of Efficiency

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Enhanced Electroresponse of Alkaline Earth Metal-Doped Silica/Titania Spheres by Synergetic Effect of Dispersion Stability and Dielectric Property

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Numerical Simulation and Optimization of An a-ITZO TFT Based on a Bi-Layer Gate Dielectrics

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Optical Line Width Broadening Mechanisms at the 10 kHz Level in Eu3+:Y2O3 Nanoparticles

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Comparing Electron Recombination via Interfacial Modifications in Dye-Sensitized Solar Cells

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Synthesis of Phosphonic Acid Ligands for Nanocrystal Surface Functionalization and Solution Processed Memristors

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Interfacial Reaction and Electrical Properties of HfO2 Film Gate Dielectric Prepared by Pulsed Laser Deposition in Nitrogen: Role of Rapid Thermal Annealing and Gate Electrode

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Structure, Sodium Ion Role, and Practical Issues for β-alumina as a High-k Solution-Processed Gate Layer for Transparent and Low-Voltage Electronics

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Solid-Phase Epitaxy of Perovskite High Dielectric PrAlO3 Films Grown by Atomic Layer Deposition for Use in Two-Dimensional Electronics and Memory Devices

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Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations

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THz Near-Field Imaging of Extreme Subwavelength Metal Structures

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Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device

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Wake-Up in a Hf0.5Zr0.5O2 Film: A Cycle-by-Cycle Emergence of the Remnant Polarization via the Domain Depinning and the Vanishing of the Anomalous Polarization Switching

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Profile of the refractive index distribution over the depth of (HfO2) x (Al2O3)1 − x films

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Effects of oxygen pressure during deposition on the dielectric properties of amorphous titanium dioxide thin films

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Nonvolatile Metal–Oxide–Semiconductor Capacitors with Ru-RuO x Composite Nanodots Embedded in Atomic-Layer-Deposited Al2O3 Films

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Bulklike band-offset mystery solved through energy minimization: Lessons from perovskite oxide heterojunctions

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Hafnium-Oxide 3-D Nanofilms via the Anodizing of Al/Hf Metal Layers

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Implantable Neural Prostheses 2

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Synthesis of cubic and monoclinic hafnia nanoparticles by pulsed plasma in liquid method

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Investigation on the dielectric properties of titanium-loaded ionic liquid-based nano-organosilica as a novel material

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Structure dependent dielectric response of spray coated nanostructured zirconia thin films

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Two-dimensional (2D) analytical investigation of an n-type junctionless gate-all-around tunnel field-effect transistor (JL GAA TFET)

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Performance and Reliability of Electrowetting-on-Dielectric (EWOD) Systems Based on Tantalum Oxide

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Photocatalytic Hydrogen Generation and CO2 Conversion Using g-C3N4 Decorated Dendritic Fibrous Nanosilica: Role of Interfaces between Silica and g-C3N4

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An atomistic view on the Schottky barrier lowering applied to SrTiO3/Pt contacts

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High Discharge Energy Density and Efficiency in Newly Designed PVDF@SiO2–PVDF Composites for Energy Capacitors

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Direct Observation of a Plasmon-Induced Hot Electron Flow in a Multimetallic Nanostructure

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Evaluation of Volatility and Thermal Stability in Monomeric and Dimeric Lanthanide(III) Complexes Containing Enaminolate Ligands

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Advanced Nanomaterials for Solar Cells and Light Emitting Diodes

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Ultrathin ZrO2 on LiNi0.5Mn0.3Co0.2O2 electrode surface via atomic layer deposition for high-voltage operation in lithium-ion batteries

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Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

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Cu2+ substituted Cr2O3 nanostructures prepared by microwave-assisted method: an investigation of its structural, morphological, optical, and dielectric properties

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Fabrication of NbTiN Josephson Junctions With Thermally Oxidized Hf Tunnel Barriers

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Origin of Abnormal Dielectric Behavior and Chemical States in Amorphous CaCu3Ti4O12 Thin Films on a Flexible Polymer Substrate

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Low temperature sputtered ITO on glass and epoxy resin substrates: influence of process parameters and substrate roughness on morphological and electrical properties

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Composite Polymer Electrolytes with Li7La3Zr2O12 Garnet-Type Nanowires as Ceramic Fillers: Mechanism of Conductivity Enhancement and Role of Doping and Morphology

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Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

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Kinetic Monte Carlo Simulations of Defects in Anatase Titanium Dioxide

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A Frequency-Multiplexed Coherent Electro-optic Memory in Rare Earth Doped Nanoparticles

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Light Emission in Nd Doped Si-Rich HfO2 Films Prepared by Magnetron Sputtering

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The impact of nano-bubbles on the laser performance of hafnia films deposited by oxygen assisted ion beam sputtering method

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Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

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Ni doping significantly improves dielectric properties of La2O3 films

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Electrical, Structural and Interfacial Characterization of HfO 2 Films on Si Substrates

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Lanthanide N,N-Dimethylaminodiboranates: Highly Volatile Precursors for the Deposition of Lanthanide-Containing Thin Films

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Optimization of Electrical Parameters of Pocket Doped SOI TFET with L Shaped Gate

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Low-loss metasurface optics down to the deep ultraviolet region

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Comparative study of oxidizing ambient infused with varying nitrogen flow rates for fabrication of ternary nitrided AlZrO based MOS capacitor

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High-k 2D Sb2O3 Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process

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Atomically flat HfO2 layer fabricated by mild oxidation HfS2 with controlled number of layers

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Lateral variations of the surface electric potential and elastic stiffness of ultrathin Hf0.5Zr0.5O2 films on silicon

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AIP Advances 11 (1) 015216 (2021)
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Temperature-Independent Polarization of Ultrathin Phthalocyanine-Based Hybrid Organic/Inorganic Heterojunctions

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Multi-stack insulator to minimise threshold voltage drift in ZnO FET sensors operating in ionic solutions

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Micro and Nano Engineering 8 100066 (2020)
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Time Complexity of In-Memory Solution of Linear Systems

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Phase evolution in (1−x)(Na0.5Bi0.5)TiO3-xSrTiO3 solid solutions: A study focusing on dielectric and ferroelectric characteristics

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Effect of Interface Structure on the Hydrophobicity, Mechanical and Optical Properties of HfO2/Mo/HfO2 Multilayer Films

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JOM 71 (10) 3711 (2019)
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Emission of Molecular Nitrogen upon Electron Bombardment of Pyrolytic Aerogel SiO2 and Aluminum

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JETP Letters 110 (10) 654 (2019)
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Controlled-crystallinity of SiO2/TiO2 hollow nanoparticles and their electroresponsive behaviors

Bomi Kim, Sohee Park and Seungae Lee
Journal of Industrial and Engineering Chemistry 104 203 (2021)
DOI: 10.1016/j.jiec.2021.08.023
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Polymer-based dielectrics with high permittivity for electric energy storage: A review

Jun-Wei Zha, Ming-Sheng Zheng, Ben-Hui Fan and Zhi-Min Dang
Nano Energy 89 106438 (2021)
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Arunita Mukherjee and Rajendra Kumar Nagaria
1 (2021)
DOI: 10.1109/GCAT52182.2021.9587772
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Exploratory studies on wet oxidation grown ternary hafnium tantalum oxide for metal‐oxide semiconductor application

Way Foong Lim and Hock Jin Quah
International Journal of Energy Research 46 (4) 4699 (2022)
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Controllable Excitation of Surface Plasmon Polaritons in Graphene‐Based Semiconductor Quantum Dot Waveguides

Mikhail Yu. Gubin, Alexei V. Prokhorov, Valentyn S. Volkov and Andrey B. Evlyukhin
Annalen der Physik 533 (11) 2100139 (2021)
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Chemical defect-dependent resistive switching characterization in CeO2 thin films

Tran Thi Be Lan, Yu-Teng Li, An-Cheng Aidan Sun, Hsi-Chuan Lu and Sea-Fue Wang
Materials Science in Semiconductor Processing 137 106177 (2022)
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Traceable Nanoscale Measurements of High Dielectric Constant by Scanning Microwave Microscopy

Damien Richert, José Morán-Meza, Khaled Kaja, Alexandra Delvallée, Djamel Allal, Brice Gautier and François Piquemal
Nanomaterials 11 (11) 3104 (2021)
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Structure and optical properties of ZrxHf1-xO2 films deposited by pulsed laser co-ablation of Zr and Hf targets with the assistance of oxygen plasma

Chujun Yao, Dong Zhang, Li Wu, Ning Xu, Jian Sun and Jiada Wu
Ceramics International 48 (1) 587 (2022)
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Raman spectroscopy estimation of the carrier concentration and the value of strain in monolayer graphene films grown on 4H-SiC

I A Eliseyev, V Yu Davydov, A N Smirnov, M O Nestoklon, P A Dementev, S P Lebedev, A A Lebedev, K A Bokai and D Yu Usachov
Journal of Physics: Conference Series 1400 (5) 055037 (2019)
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DFT based estimation of CNT parameters and simulation-study of GAA CNTFET for nano scale applications

Bhoop Singh, Prasad B and Dinesh Kumar
Materials Research Express 7 (1) 015916 (2020)
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Tolerance against conducting filament formation in nanosheet-derived titania thin films

Masaya Sato, Masahiro Hara, Asami Funatsu and Ryo Nouchi
Nano Express 1 (1) 010034 (2020)
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A substitution method for nanoscale capacitance calibration using scanning microwave microscopy

José A Morán-Meza, Alexandra Delvallée, Djamel Allal and François Piquemal
Measurement Science and Technology 31 (7) 074009 (2020)
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Capacitor-type thin-film heat flow switching device

Keisuke Hirata, Takuya Matsunaga, Saurabh Singh, Masaharu Matsunami and Tsunehiro Takeuchi
Japanese Journal of Applied Physics 60 (12) 124004 (2021)
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PVDF–BaSrTiO3 nanocomposites for flexible electrical energy storage devices

Shiva Adireddy, Venkata Sreenivas Puli, Samuel Charles Sklare, Tiffany Jialin Lou, Brian Charles Riggs, Ravinder Elupula, Scott Michael Grayson and Douglas Brian Chrisey
Emerging Materials Research 3 (6) 265 (2014)
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Substrate-dependent synergistic many-body effects in atomically thin two-dimensional WS2

Shreyasi Das, Rup K. Chowdhury, Debjani Karmakar, Soumen Das and Samit K. Ray
Physical Review Materials 5 (12) (2021)
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Performance enhancement of recessed silicon channel double gate junctionless field-effect-transistor using TCAD tool

Sandeep Kumar, Arun Kumar Chatterjee and Rishikesh Pandey
Journal of Computational Electronics 20 (6) 2317 (2021)
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Range-separated hybrid functionals for mixed dimensional heterojunctions: Application to phthalocyanines/MoS2

Qunfei Zhou, Zhen-Fei Liu, Tobin J. Marks and Pierre Darancet
APL Materials 9 (12) 121112 (2021)
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Caleb E. Glaser, Andrew T. Binder, Luke Yates, Andrew A. Allerman, Daniel F. Feezell and Robert J. Kaplar
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50 Ω transmission lines with extreme wavelength compression based on superconducting nanowires on high-permittivity substrates

Daniel F. Santavicca, Marco Colangelo, Carleigh R. Eagle, Maitri P. Warusawithana and Karl K. Berggren
Applied Physics Letters 119 (25) 252601 (2021)
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Ultrashort pulsed laser ablation of zirconia-alumina composites for implant applications

Jide Han, Olivier Malek, Jozef Vleugels, Annabel Braem and Sylvie Castagne
Journal of Materials Processing Technology 299 117335 (2022)
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Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures

Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Francesca Monforte, Guglielmo Guido Condorelli, Fabrizio Roccaforte, Filippo Giannazzo and Raffaella Lo Nigro
ACS Applied Electronic Materials 4 (1) 406 (2022)
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Bunseng Chan, Charlie Soh, Kang Eng Siew, Hui Seng Kheong, Lim Wei Jer, Ismail Saad and Nurmin Bolong
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Subthreshold Swing of 59 mV decade −1 in Nanoscale Flexible Ultralow‐Voltage Organic Transistors

Michael Geiger, Robin Lingstädt, Tobias Wollandt, Julia Deuschle, Ute Zschieschang, Florian Letzkus, Joachim N. Burghartz, Peter A. Aken, R. Thomas Weitz and Hagen Klauk
Advanced Electronic Materials 8 (5) 2101215 (2022)
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Electrical control of all-optical graphene switches

Mohammed Alaloul and Jacob B. Khurgin
Optics Express 30 (2) 1950 (2022)
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Phase Properties of Different HfO2 Polymorphs: A DFT-Based Study

Emiliano Laudadio, Pierluigi Stipa, Luca Pierantoni and Davide Mencarelli
Crystals 12 (1) 90 (2022)
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Analysis of gate engineered asymmetric junctionless double gate MOSFET for varying operating conditions

Namrata Mendiratta, Suman Lata Tripathi and Bhanu Prakash Kolla
IOP Conference Series: Materials Science and Engineering 872 (1) 012012 (2020)
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Performance Improvement in E-Gun Deposited SiOx- Based RRAM Device by Switching Material Thickness Reduction

Sourav Roy and Siddheswar Maikap
Journal of Physics: Conference Series 2161 (1) 012040 (2022)
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Sabina Abdul Hadi, Rida Gadhafi, Zayed Ahmad, Maryam Ahli, Ali Mohammed, Maher AlQassab and Wathiq Mansoor
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Numerical simulation of analog metrics and parasitic capacitances of GaAs GS-GAA FinFET for ULSI switching applications

Bhavya Kumar and Rishu Chaujar
The European Physical Journal Plus 137 (1) (2022)
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Solution-processed high performance HIZO thin film transistor with AZO gate dielectric

Gao Ya-Na, Li Xi-Feng and Zhang Jian-Hua
Acta Physica Sinica 63 (11) 118502 (2014)
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Comparison between memory characteristics of MONOS memory with LaON/SiO2 or HfON/SiO2 as dual-tunnel layer

He Mei-Lin, Xu Jing-Ping, Chen Jian-Xiong and Liu Lu
Acta Physica Sinica 62 (23) 238501 (2013)
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A Tour‐Guide through Carbon Nitride‐Land: Structure‐ and Dimensionality‐Dependent Properties for Photo(Electro)Chemical Energy Conversion and Storage

Vincent Wing‐hei Lau and Bettina V. Lotsch
Advanced Energy Materials 12 (4) 2101078 (2022)
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Artificial Neurons and Synapses Based on Al/a-SiNxOy:H/P+-Si Device with Tunable Resistive Switching from Threshold to Memory

Kangmin Leng, Xu Zhu, Zhongyuan Ma, Xinyue Yu, Jun Xu, Ling Xu, Wei Li and Kunji Chen
Nanomaterials 12 (3) 311 (2022)
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Comparison of Electrical Characteristics of Si Homojunction and SiGe Heterojunction 14 nm SOI FinFET

Samjot Kaur Aujla and Navneet Kaur
Journal of The Institution of Engineers (India): Series B (2022)
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Influence of temperature and dimension in a 4H-SiC vertical power MOSFET

M H Alqaysi, A Martinez, B Ubochi, S Batcup and K Ahmeda
Engineering Research Express 2 (4) 045020 (2020)
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Ultra-power-efficient heterogeneous III–V/Si MOSCAP (de-)interleavers for DWDM optical links

Stanley Cheung, Geza Kurczveil, Yingtao Hu, Mingye Fu, Yuan Yuan, Di Liang and Raymond G. Beausoleil
Photonics Research 10 (2) A22 (2022)
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Design Space Exploration for Selector Diode-STTRAM Crossbar Arrays

Swaroop Ghosh, Rashmi Jha, Anirudh Iyengar and Rekha Govindaraj
IEEE Transactions on Magnetics 54 (6) 1 (2018)
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Passivated Porous Silicon Membranes and Their Application to Optical Biosensing

Clara Whyte Ferreira, Roselien Vercauteren and Laurent Francis
Micromachines 13 (1) 10 (2021)
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Rectifying Characteristics of Resonant Tunneling MIS Devices Using Ultra-Thin High-k Oxides Deposited by ALD

Hector Uribe-Vargas, Joel Molina-Reyes, Eduardo Ortega and Arturo Ponce
IEEE Electron Device Letters 39 (9) 1461 (2018)
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Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr1-x O2/Interlayer/Si (MFIS) Gate Structure

Fengbin Tian, Shujing Zhao, Hao Xu, Jinjuan Xiang, Tingting Li, Wenjuan Xiong, Jiahui Duan, Junshuai Chai, Kai Han, Xiaolei Wang, Wenwu Wang and Tianchun Ye
IEEE Transactions on Electron Devices 68 (11) 5872 (2021)
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Recombination Analysis of Tunnel Oxide Passivated Contact Solar Cells

Suchismita Mitra, Hemanta Ghosh, Hiranmay Saha and Kunal Ghosh
IEEE Transactions on Electron Devices 66 (3) 1368 (2019)
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Simulation and investigations on semiconductor materials and devices with surround gate geometry for high performance and low power nano scale applications

Bhoop Singh, B. Prasad and Dinesh Kumar
IOP Conference Series: Materials Science and Engineering 804 (1) 012033 (2020)
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Reducing the power consumption of two-dimensional logic transistors

Weisheng Li, Hongkai Ning, Zhihao Yu, Yi Shi and Xinran Wang
Journal of Semiconductors 40 (9) 091002 (2019)
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Effect of oxide and interface traps on electrical characteristics of post-deposition annealed HfSiO4/n-Si structures

Aysegul Kahraman and Ercan Yilmaz
Semiconductor Science and Technology 36 (4) 045004 (2021)
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HfO2-based ferroelectrics: From enhancing performance, material design, to applications

Haiyan Chen, Xuefan Zhou, Lin Tang, Yonghong Chen, Hang Luo, Xi Yuan, Chris R. Bowen and Dou Zhang
Applied Physics Reviews 9 (1) 011307 (2022)
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Room-temperature and high-quality HfO2/SiO2 gate stacked film grown by neutral beam enhanced atomic layer deposition

Beibei Ge, Daisuke Ohori, Yi-Ho Chen, Takuya Ozaki, Kazuhiko Endo, Yiming Li, Jenn-Hwan Tarng and Seiji Samukawa
Journal of Vacuum Science & Technology A 40 (2) 022405 (2022)
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Doping α-Al2O3 to reduce its hydrogen permeability: Thermodynamic assessment of hydrogen defects and solubility from first principles

Vrindaa Somjit and Bilge Yildiz
Acta Materialia 169 172 (2019)
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Effect of impurities from deposition precursors on the electronic properties of Si/SiO2 interfaces

Hu Li, Kouji Inagaki and Yoshitada Morikawa
Journal of Applied Physics 131 (5) 055306 (2022)
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An Accurate Model of Threshold Voltage and Effect of High-K Material for Fully Depleted Graded Channel DMDG MOSFET

Himeli Chakrabarti, Reshmi Maity, S. Baishya and N. P. Maity
Silicon (2022)
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Enhancement of Tunneling CNTFET Performance Using a High-k Dielectric Pocket

M. Ossaimee, N. Salem, M. Abouelatta and A. Shaker
ECS Journal of Solid State Science and Technology 9 (10) 101002 (2020)
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Design of a low power silicon-plasmonic hybrid electro-optic modulator relied on ITO

Omid Abbaszadeh-Azar and Kambiz Abedi
Optical Materials 125 112081 (2022)
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Gennadi Bersuker, Keith McKenna and Alexander Shluger
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Orlando Auciello
Functional Diamond 2 (1) 1 (2022)
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Yi Zhao
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Fu‐Chien Chiu, Somnath Mondal and Tung‐Ming Pan
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Hong‐Liang Lu and David Wei Zhang
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Local structural investigation of hafnia-zirconia polymorphs in powders and thin films by X-ray absorption spectroscopy

Tony Schenk, Andris Anspoks, Inga Jonane, Reinis Ignatans, Brienne S. Johnson, Jacob L. Jones, Massimo Tallarida, Carlo Marini, Laura Simonelli, Philipp Hönicke, Claudia Richter, Thomas Mikolajick and Uwe Schroeder
Acta Materialia 180 158 (2019)
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Microwave Flexible Electronics Directly Transformed from Foundry‐Produced, Multilayered Monolithic Integrated Circuits

Guoxuan Qin, Yei Hwan Jung, Huilong Zhang, Ningyue Jiang, Pingxi Ma, Scott Stetson, Marco Racanelli and Zhenqiang Ma
Advanced Electronic Materials 2101350 (2022)
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Influence of High-k Passivation Layer on Gate Field Plate AlGaN/GaN/AlGaN Double Heterojunction HEMT

Ramkumar Natarajan, Eswaran Parthasarathy and P. Murugapandiyan
Silicon (2022)
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Structural, electronic and electrical conduction behaviour of Gd3+ doped Ca2−xY2O5 metal oxide ceramic synthesised by solid state reaction method

Sadhana Agrawal
Journal of the Australian Ceramic Society 58 (2) 683 (2022)
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An overview of conventional and new advancements in high kappa thin film deposition techniques in metal oxide semiconductor devices

Premdass Devaray, Sharifah Fatmadiana Wan Muhammad Hatta and Yew Hoong Wong
Journal of Materials Science: Materials in Electronics 33 (10) 7313 (2022)
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Stefan Slesazeck, Halid Mulaosmanovic, Michael Hoffmann, Uwe Schroeder, Thomas Mikolajick and Benjamin Max
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Maria Letizia Terranova and Emanuela Tamburri
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Impact of annealing on electric and elastic properties of 10-nm Hf0.5Zr0.5O2 films prepared on Si by sputtering

Leonid Bolotov, Shinji Migita, Ryouta Fujio, Manabu Ishimaru, Shogo Hatayama and Noriyuki Uchida
Microelectronic Engineering 258 111770 (2022)
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Recent progress in metasurface-enabled optical waveplates

Yadong Deng, Ziru Cai, Yingtao Ding, Sergey I. Bozhevolnyi and Fei Ding
Nanophotonics 11 (10) 2219 (2022)
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Hafnium dioxide effect on the electrical properties of M/n-GaN structure

Sadoun Ali, Mansouri Sedik, Chellali Mohammed, Lakhdar Nacereddine, Hima Abdelkader and Benamara Zineb
Materials Science-Poland 38 (1) 165 (2020)
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Temperature-dependent effect of modulation in graphene-supported metamaterials

Yevhenii M Morozov, Anatoliy S Lapchuk, Iryna S Protsak, Andriy A Kryuchyn and Ivan P Nevirkovets
New Journal of Physics 24 (4) 043006 (2022)
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Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?

Michael Waltl, Theresia Knobloch, Konstantinos Tselios, Lado Filipovic, Bernhard Stampfer, Yoanlys Hernandez, Dominic Waldhör, Yury Illarionov, Ben Kaczer and Tibor Grasser
Advanced Materials 2201082 (2022)
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Near‐Infrared Electroluminescent Light‐Emitting Transistors Based on CVD‐Synthesized Ambipolar ReSe 2 Nanosheets

Roshan Jesus Mathew, Kai‐Hsiang Cheng, Ching‐Hong Hsu, Pradyumna Kumar Chand, Christy Roshini Paul Inbaraj, Yu‐Lou Peng, Jung‐Yen Yang, Chih‐Hao Lee and Yit‐Tsong Chen
Advanced Optical Materials 10 (8) 2102580 (2022)
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Electronic excitation-induced tunneling and charge-trapping explored by in situ electrical characterization in Ni/HfO2/β-Ga2O3 metal–oxide–semiconductor capacitors

N. Manikanthababu, B.R. Tak, K. Prajna, S. Sarkar, R.C. Meena, K. Asokan, S.R. Barman, R. Singh and B.K. Panigrahi
Materials Science and Engineering: B 281 115716 (2022)
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Ab Initio Calculations of Electric-field Gradient in Ferroelectric HfO2

Fumitatsu Iwase
Journal of the Physical Society of Japan 91 (5) (2022)
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Effects of interface atomic rearrangement on band alignments in Ge/a-Al2O3/Au heterostructures from first-principles

Eunjung Ko and Jung-Hae Choi
Applied Surface Science 594 153491 (2022)
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Photovoltaic/photo-electrocatalysis integration for green hydrogen: A review

Piyali Chatterjee, Mounika Sai Krishna Ambati, Amit K. Chakraborty, Sabyasachi Chakrabortty, Sajal Biring, Seeram Ramakrishna, Terence Kin Shun Wong, Avishek Kumar, Raghavendra Lawaniya and Goutam Kumar Dalapati
Energy Conversion and Management 261 115648 (2022)
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Bidirectional Selector Realized Through Multilayer Tunnel Barrier Engineering

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IEEE Journal of the Electron Devices Society 10 367 (2022)
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High Performance All Nonmetal SiNx Resistive Random Access Memory with Strong Process Dependence

Te Jui Yen, Albert Chin and Vladimir Gritsenko
Scientific Reports 10 (1) (2020)
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Significantly improved high k dielectric performance: Rare earth oxide as a passivation layer laminated with TiO2 film

Shuan Li, Weipeng Wang, Youyu Lin, Linlin Wang and Xingguo Li
Journal of Rare Earths (2022)
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Analysis of the (100)Si/LaAlO3 structure by electron spin resonance: nature of the interface

K. Clémer, A. Stesmans, V. V. Afanas’ev, L. F. Edge and D. G. Schlom
Journal of Materials Science: Materials in Electronics 18 (7) 735 (2007)
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Surface‐Supported Metal‐Organic Framework as Low‐Dielectric‐Constant Thin Films for Novel Hybrid Electronics

Ricardo M. L. Silva, Luiz G. S. Albano, Tatiana P. Vello, Wagner W. R. Araújo, Davi H. S. Camargo, Leirson D. Palermo, Cátia C. Corrêa, Christof Wöll and Carlos C. B. Bufon
Advanced Electronic Materials 2200175 (2022)
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Muhammad M. Hussain, Denis Shamiryan, Vasile Paraschiv, Kenichi Sano and Karen A. Reinhardt
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Effect of ammonium salt on corrosion of pipelines and components in a crude oil distillation column: Electrochemical and AIMD studies

Ruidong Li, Hui Huang, Xiaodan Wang and Yueshe Wang
Corrosion Science 203 110362 (2022)
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Chih-Feng Yen, Hung-Chang Hsu, Yu-Ya Huang and Shen-Hao Tsao
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Growth and characterization of Ti-based films obtained from two selected precursors: H2O, TiCl4, Ti(N(CH3)2)4 or Al2(CH3)6 by the ALD method

Lukasz Wachnicki, Sylwia Gieraltowska, Bartlomiej S. Witkowski, Marek Godlewski and Elzbieta Guziewicz
Materials Science in Semiconductor Processing 148 106792 (2022)
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IGZO synaptic thin-film transistors with embedded AlO x charge-trapping layers

Yeojin Lee, Hyerin Jo, Kooktae Kim, Hyobin Yoo, Hyeonjun Baek, Dong Ryeol Lee and Hongseok Oh
Applied Physics Express 15 (6) 061005 (2022)
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O. Engström, I. Z. Mitrovic, S. Hall, P. K. Hurley, K. Cherkaoui, S. Monaghan, H. D. B. Gottlob and M. C. Lemme
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TCAD investigation of ferroelectric based substrate MOSFET for digital application

Rashi Mann and Rishu Chaujar
Silicon 14 (9) 5075 (2022)
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LiNbO3-based sol-gel composite ultrasonic transducer poled at low temperatures

Naoki Kambayashi, Naoki Zaito, Hiroaki Akatsuka and Makiko Kobayashi
Japanese Journal of Applied Physics 61 (SG) SG1060 (2022)
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Polymer thin film transistor vapor sensor analysis, drift suppression, and response optimization via circuit level strategy

T. Mukhopadhyaya, N. McKeever, H. E. Katz and W. Wondmagegn
Journal of Computational Electronics (2022)
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Nonaqueous Chemistry of Group 4 Oxo Clusters and Colloidal Metal Oxide Nanocrystals

Dietger Van den Eynden, Rohan Pokratath and Jonathan De Roo
Chemical Reviews 122 (11) 10538 (2022)
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Investigation and optimization of traps properties in Al2O3/SiO2 dielectric stacks using conductance method

Yiyi Yan, Valeriya Kilchytska, Denis Flandre and Jean-Pierre Raskin
Solid-State Electronics 194 108347 (2022)
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High-ĸ dielectric oxide as an interfacial layer with enhanced photo-generation for Gr/Si solar cells

Muhammad Fahad Bhopal, Kamran Akbar, Malik Abdul Rehman, Doo won Lee, Atteq ur Rehman, Yongho Seo, Seung-Hyun Chun and Soo Hong Lee
Carbon 125 56 (2017)
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Nonvolatile memory capacitors based on Al2O3 tunneling and HfO2 blocking layers with charge storage in atomic-layer-deposited Pt nanocrystals

Xiao-Jie Liu, Lin Zhu, Mo-Yun Gao, Xue-Fei Li, Zheng-Yi Cao, Hai-Fa Zhai, Ai-Dong Li and Di Wu
Applied Surface Science 289 332 (2014)
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