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Cited article:
J. Robertson
Eur. Phys. J. Appl. Phys., 28 3 (2004) 265-291
Published online: 2004-12-02
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Applied Physics Letters 105 (2) 021601 (2014)
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Physical Review B 85 (19) (2012)
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Electro-optical modulation of a silicon waveguide with an “epsilon-near-zero” material
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Optics Express 21 (22) 26387 (2013)
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K. Xiong, J. Robertson and S. J. Clark
Applied Physics Letters 89 (2) 022907 (2006)
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Review on one-dimensional nanostructures prepared by electrospinning and atomic layer deposition
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Journal of Physics: Conference Series 559 012010 (2014)
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Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction
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Physical Review B 92 (16) (2015)
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Thin Films of High-kOxides and ZnO for Transparent Electronic Devices
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Chemical Vapor Deposition 19 (4-6) 213 (2013)
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C. C. Fulton, G. Lucovsky and R. J. Nemanich
Journal of Applied Physics 99 (6) 063708 (2006)
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La2O3 Nano powders by mixture of fuels approach through chemical combustion for dielectric studies
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IOP Conference Series: Materials Science and Engineering 73 012099 (2015)
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Electrical and reliability characteristics of polycrystalline silicon thin-film transistors with high-κ Eu2O3 gate dielectrics
Li-Chen Yen, Chia-Wei Hu, Tsung-Yu Chiang, Tien-Sheng Chao and Tung-Ming Pan
Applied Physics Letters 100 (17) 173509 (2012)
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Ink-Jet-Printed Organic Thin-Film Transistors for Low-Voltage-Driven CMOS Circuits With Solution-Processed AlOX Gate Insulator
Sung Hoon Kim, Sun Hee Lee, Youn Goo Kim and Jin Jang
IEEE Electron Device Letters 34 (2) 307 (2013)
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Nanoscale investigations: Surface potential of rare-earth oxide (Re2O3) thin films by kelvin probe force microscopy for next generation CMOS technology
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Surfaces and Interfaces 4 69 (2016)
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Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers
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Applied Physics Letters 93 (10) 102115 (2008)
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Phase transition in sputtered HfO2 thin films: A qualitative Raman study
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Applied Surface Science 261 727 (2012)
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High dielectric material dependence of carbon nanotube field effect transistor considering non‐ballistic conduction
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Micro & Nano Letters 9 (10) 620 (2014)
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First-principles calculations of electronic and optical properties of Mn-doped cubic HfO2
Yu-Fen Zhang, Hao Ren, Zhi-Tao Hou, Cheng Wang and Shuai Zhao
Journal of Alloys and Compounds 609 107 (2014)
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The initial atomic layer deposition of HfO2∕Si(001) as followed in situ by synchrotron radiation photoelectron spectroscopy
Massimo Tallarida, Konstantin Karavaev and Dieter Schmeisser
Journal of Applied Physics 104 (6) 064116 (2008)
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From amorphous phase separations to nanostructured materials in sol–gel derived ZrO2:Eu3+/SiO2 and ZnO/SiO2 composites
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Journal of Non-Crystalline Solids 352 (21-22) 2152 (2006)
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Electron spin resonance observation of an interfacial GePb1-type defect in SiO2/(100)Si1−xGex/SiO2/Si heterostructures
A Stesmans, P Somers and V V Afanas’ev
Journal of Physics: Condensed Matter 21 (12) 122201 (2009)
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Microelectronic Engineering 86 (7-9) 1915 (2009)
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Applied Physics Letters 94 (21) 212902 (2009)
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Characterization of Semiconductor Heterostructures and Nanostructures
Andre Stesmans and Valery V. Afanas'ev
Characterization of Semiconductor Heterostructures and Nanostructures 435 (2008)
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Morphology and Composition of Selected High-k Materials and Their Relevance to Dielectric Properties of Thin Films
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Journal of The Electrochemical Society 155 (5) G97 (2008)
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Bilayer Organic–Inorganic Gate Dielectrics for High-Performance, Low-Voltage, Single-Walled Carbon Nanotube Thin-Film Transistors, Complementary Logic Gates, and p–n Diodes on Plastic Substrates
Q. Cao, M.-G. Xia, M. Shim and J. A. Rogers
Advanced Functional Materials 16 (18) 2355 (2006)
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Srikant Jayanti, Xiangyu Yang, Daniel J. Lichtenwalner and Veena Misra
Applied Physics Letters 96 (9) 092905 (2010)
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DIELECTRIC AND INTERFACE STABILITY OF LaSmO3 FILMS
WEITAO SU, QIUHUI ZHUANG, DEXUAN HUO and BIN LI
Surface Review and Letters 19 (06) 1250064 (2012)
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H. Döscher, G. Lilienkamp, P. Iskra, M. Kazempoor and W. Daum
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28 (4) C5B5 (2010)
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Physical Review B 77 (17) 172101 (2008)
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Remote phonon scattering in field-effect transistors with a high κ insulating layer
B. Laikhtman and P. M. Solomon
Journal of Applied Physics 103 (1) 014501 (2008)
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Floating Gate Memory with Biomineralized Nanodots Embedded in High-kGate Dielectric
Kosuke Ohara, Ichiro Yamashita, Toshitake Yaegashi, et al.
Applied Physics Express 2 (9) 095001 (2009)
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In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates
K. Devloo-Casier, J. Dendooven, K. F. Ludwig, et al.
Applied Physics Letters 98 (23) 231905 (2011)
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Investigation of forming-gas annealed CeO2 thin film on GaN
Hock Jin Quah, Kuan Yew Cheong, Zainuriah Hassan and Zainovia Lockman
Journal of Materials Science: Materials in Electronics 22 (6) 583 (2011)
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Organic Optoelectronics
Chengliang Wang, Lang Jiang and Wenping Hu
Organic Optoelectronics 95 (2013)
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Thickness dependence of the structural and dielectric properties of epitaxial ZrO2films grown by limited reaction sputtering
Y Zhou, K Sasaki, T Kawae and A Morimoto
Journal of Physics D: Applied Physics 42 (20) 205406 (2009)
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Hafnia-Silica Cryogels: Solvent-Assisted Textural and Catalytic Control in the Citronellal Cyclization
Ciril Jimeno, Jonathan Miras and Jordi Esquena
ChemCatChem 6 (9) 2626 (2014)
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Low-Operating-Voltage Pentacene-Based Transistors and Inverters With Solution-Processed Barium Zirconate Titanate Insulators
Chia-Yu Wei, Wen-Chieh Huang, Chih-Kai Yang, Yen-Yu Chang and Yeong-Her Wang
IEEE Electron Device Letters 32 (12) 1755 (2011)
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Study on a Metal–Insulator–Silicon Hydrogen Sensor With LaTiON as Gate Insulator
Jerry Yu, Gang Chen and Pui To Lai
IEEE Sensors Journal 13 (5) 1534 (2013)
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A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs
Sofia Johansson, Martin Berg, Karl-Magnus Persson and Erik Lind
IEEE Transactions on Electron Devices 60 (2) 776 (2013)
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Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness
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Journal of Applied Physics 107 (3) 034504 (2010)
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High-mobility BaSnO3thin-film transistor with HfO2gate insulator
Young Mo Kim, Chulkwon Park, Useong Kim, Chanjong Ju and Kookrin Char
Applied Physics Express 9 (1) 011201 (2016)
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Organic Macromolecular High Dielectric Constant Materials: Synthesis, Characterization, and Applications
Meng Guo, Teruaki Hayakawa, Masa-aki Kakimoto and Theodore Goodson
The Journal of Physical Chemistry B 115 (46) 13419 (2011)
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Electrochemical and passive characterization of a beta type Ti45Zr38Al17 cast rod in nitric acid medium
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Electrochimica Acta 85 210 (2012)
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Investigations on high-κ dielectrics for low threshold voltage and low leakage zinc oxide thin-film transistor, using material selection methodologies
Kavindra Kandpal and Navneet Gupta
Journal of Materials Science: Materials in Electronics 27 (6) 5972 (2016)
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Inorganic Materials 48 (9) 925 (2012)
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Yogesh Goswami, Pranav Asthana and Bahniman Ghosh
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Physical Review B 92 (18) (2015)
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Advanced Materials 26 (48) 8198 (2014)
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Journal of Physics D: Applied Physics 50 (16) 165107 (2017)
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Applied Surface Science 258 (22) 8974 (2012)
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Trap-assisted tunneling, capacitance–voltage characteristics, and surface properties of Sm2O3 thin film on Si substrate
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Physical Review B 90 (23) (2014)
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Structural and optical characterization of Cr2O3 nanostructures: Evaluation of its dielectric properties
M. M. Abdullah, Fahd M. Rajab and Saleh M. Al-Abbas
AIP Advances 4 (2) 027121 (2014)
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Floating Gate Memory With Biomineralized Nanodots Embedded in $\hbox{HfO}_{2}$
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IEEE Transactions on Nanotechnology 10 (3) 576 (2011)
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Enhanced Capacitance of Composite Anodic ZrO2Films Comprising High Permittivity Oxide Nanocrystals and Highly Resistive Amorphous Oxide Matrix
Hiroki Habazaki, Shun Koyama, Yoshitaka Aoki, Norihito Sakaguchi and Shinji Nagata
ACS Applied Materials & Interfaces 3 (7) 2665 (2011)
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Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon
Yi Zhao, Masahiro Toyama, Koji Kita, Kentaro Kyuno and Akira Toriumi
Applied Physics Letters 88 (7) 072904 (2006)
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C Zimmermann, O Bethge, B Lutzer and E Bertagnolli
Semiconductor Science and Technology 31 (7) 075009 (2016)
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Xiuyan Li, Takeaki Yajima, Tomonori Nishimura and Akira Toriumi
Applied Physics Express 8 (6) 061304 (2015)
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Nanotechnology 23 (28) 285707 (2012)
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An integrated high temperature environmental cell for atom probe tomography studies of gas-surface reactions: Instrumentation and results
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Physical and electrical characterization of atomic-layer-deposited Ru nanocrystals embedded into Al2O3 for memory applications
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Reliability of La-Doped Hf-Based Dielectrics nMOSFETs
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IEEE Transactions on Device and Materials Reliability 9 (2) 171 (2009)
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Probing defects at interfaces and interlayers of low-dimensional Si/insulator (HfO2; LaAlO3) structures by electron spin resonance
A. Stesmans and V.V. Afanas’ev
Physica B: Condensed Matter 401-402 550 (2007)
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Valery V. Afanas’ev
Internal Photoemission Spectroscopy 255 (2014)
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Determining the Optimized Layer-by-Layer Film Architecture With Dendrimer/Carbon Nanotubes for Field-Effect Sensors
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IEEE Sensors Journal 17 (6) 1735 (2017)
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LCAO Calculations of (001) Surface Oxygen Vacancy Structure in Y-Doped BaZrO3
A. V. Bandura, R. A. Evarestov and D. D. Kuruch
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Atomic and electronic structure of gadolinium oxide
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The European Physical Journal Applied Physics 65 (1) 10702 (2014)
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Simulation of Graphene Base Transistors With Bilayer Tunnel Oxide Barrier: Model Calibration and Performance Projection
Valerio Di Lecce, Antonio Gnudi, Elena Gnani, Susanna Reggiani and Giorgio Baccarani
IEEE Electron Device Letters 37 (11) 1489 (2016)
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Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- application
A. Fissel, M. Czernohorsky and H.J. Osten
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Superiority of DFT+U with non-linear core correction for open-shell binary rare-earth metal oxides: a case study of native point defects in cerium oxides
Bolong Huang
Philosophical Magazine 94 (26) 3052 (2014)
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Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties
Shankar Swaminathan, Yun Sun, Piero Pianetta and Paul C. McIntyre
Journal of Applied Physics 110 (9) 094105 (2011)
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Characterization of Semiconductor Heterostructures and Nanostructures
Andre Stesmans and Valery V. Afanas’ev
Characterization of Semiconductor Heterostructures and Nanostructures 685 (2013)
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Electronic structure and defects of high dielectric constant gate oxide La2Hf2O7
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Applied Physics Letters 90 (6) 062901 (2007)
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Band Alignment at Molybdenum Disulphide/Boron Nitride/Aluminum Oxide Interfaces
Jennifer DiStefano, Yu-Chuan Lin, Joshua Robinson, et al.
Journal of Electronic Materials 45 (2) 983 (2016)
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Interface models and processing technologies for surface passivation and interface control in III–V semiconductor nanoelectronics
H. Hasegawa and M. Akazawa
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Optimizing the internal electric field distribution of alternating current driven organic light-emitting devices for a reduced operating voltage
Markus Fröbel, Simone Hofmann, Karl Leo and Malte C. Gather
Applied Physics Letters 104 (7) 071105 (2014)
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Effects of oxygen deficiency in the sol–gel ZrOxfilm on the electrical properties of Au/ZrOx/n-type Si/In devices
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Applied Physics Letters 101 (24) 241606 (2012)
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Integration of Amorphous $\hbox{Yb}_{2}\hbox{O}_{3}$ and Crystalline $\hbox{ZrTiO}_{4}$ as Gate Stack for Aggressively Scaled MOS Devices
Yung-Hsien Wu, Rong-Jhe Lyu, Min-Lin Wu, Lun-Lun Chen and Chia-Chun Lin
IEEE Electron Device Letters 33 (3) 426 (2012)
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F. Zheng, H. G. Chew, W. K. Choi, J. X. Zhang and H. L. Seng
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Journal of Experimental and Theoretical Physics 120 (4) 710 (2015)
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Siao Li Liew, Wei Wang, Surani Bin Dolmanan, Glen Tai Wei Goh and Dongzhi Chi
Materials Chemistry and Physics 143 (3) 1171 (2014)
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Applied Surface Science 301 451 (2014)
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Activation of hole charge carriers and generation of electromotive force in gabbro blocks subjected to nonuniform loading
Akihiro Takeuchi and Toshiyasu Nagao
Journal of Geophysical Research: Solid Earth 118 (3) 915 (2013)
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Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors
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Improving dielectric performance in anodic aluminum oxide via detection and passivation of defect states
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Applied Physics Letters 104 (24) 244103 (2014)
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Gate-Stack Engineering in $n$-Type Ultrascaled Si Nanowire Field-Effect Transistors
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Atomic layer deposited zirconium oxide electron injection layer for efficient organic light emitting diodes
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Organic Electronics 14 (1) 312 (2013)
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Structural and Electronic Properties of GaN (0001)/α-Al2O3(0001) Interface
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Advances in Condensed Matter Physics 2015 1 (2015)
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Applied Physics Letters 101 (22) 222114 (2012)
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Optical properties and thermal stability of LaYbO3 ternary oxide for high-k dielectric application
Wei-tao Su, Li Yang and Bin Li
Applied Surface Science 257 (7) 2526 (2011)
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Analysis of Off-State Leakage Current Characteristics and Mechanisms of Nanoscale MOSFETs with a High-
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Hong-Xia Liu and Fei Ma
Chinese Physics Letters 29 (12) 127301 (2012)
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Microelectronic Engineering 85 (1) 65 (2008)
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Temperature dependence of electrical transport properties of La4BaCu5−xCoxO13+δconducting oxide thin films
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physica status solidi (a) 210 (11) 2439 (2013)
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Optical susceptibilities in singly charged ZnO colloidal quantum dots embedded in different dielectric matrices
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Journal of Applied Physics 113 (5) 054303 (2013)
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Applied Physics Letters 93 (10) 103505 (2008)
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Local Dielectric Property of Cubic, Tetragonal, and Monoclinic Hafnium Oxides
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Japanese Journal of Applied Physics 51 031101 (2012)
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D Kazazis, A Zaslavsky, E Tutuc, N A Bojarczuk and S Guha
Semiconductor Science and Technology 22 (1) S1 (2007)
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Journal of Structural Chemistry 52 (3) 480 (2011)
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Thin Solid Films 529 402 (2013)
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Applied Physics Letters 94 (3) 032904 (2009)
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H. L. Chang and M. S. Liang
Applied Physics Letters 97 (4) 041912 (2010)
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JETP Letters 85 (3) 165 (2007)
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Thin Solid Films 500 (1-2) 219 (2006)
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Microelectronic Engineering 88 (3) 282 (2011)
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Materials Science and Engineering: B 135 (3) 267 (2006)
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Charge Trapping and Decay Mechanism in Post Deposition Annealed Er2O3 MOS Capacitors by Nanoscopic and Macroscopic Characterization
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IEEE Transactions on Device and Materials Reliability 15 (4) 610 (2015)
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UV-protection and photocatalytic properties of electrospun polyacrylonitrile nanofibrous mats coated with TiO2 nanofilm via sol–gel
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Applied Physics Letters 100 (17) 173113 (2012)
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Journal of Applied Physics 104 (7) 073725 (2008)
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Studies of the structural, electronic and dielectric properties of Ca1−xSrxTiO3
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Effect of crystallographic structure on electrical and mechanical characteristics of Sm2O3-Doped CeO2 films
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Russian Journal of Electrochemistry 47 (5) 505 (2011)
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Accurate Calculation of Gate Tunneling Current in Double-Gate and Single-Gate SOI MOSFETs Through Gate Dielectric Stacks
Ferney A. Chaves, David Jimenez, Francisco J. Garcia Ruiz, Andrés Godoy and Jordi Sune
IEEE Transactions on Electron Devices 59 (10) 2589 (2012)
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Hafnium zirconate gate dielectric for advanced gate stack applications
R. I. Hegde, D. H. Triyoso, S. B. Samavedam and B. E. White
Journal of Applied Physics 101 (7) 074113 (2007)
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Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric
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IEEE Transactions on Nanotechnology 11 (3) 483 (2012)
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Electrochemical characterization of nanostructured Ti–24Nb–4Zr–8Sn alloy in 3.5% NaCl solution
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Journal of the Korean Physical Society 65 (11) 1903 (2014)
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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices
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Applied Physics Letters 96 (24) 242901 (2010)
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Electron-Related Phenomena at the $\hbox{TaN/Al}_{2} \hbox{O}_{3}$ Interface
Rosario Rao, Paolo Lorenzi, Gabriella Ghidini, Fabrizio Palma and Fernanda Irrera
IEEE Transactions on Electron Devices 57 (3) 637 (2010)
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Analytical modeling of direct tunneling current through gate stacks for the determination of suitable high-kdielectrics for nanoscale double-gate MOSFETs
Ghader Darbandy, Romain Ritzenthaler, François Lime, et al.
Semiconductor Science and Technology 26 (4) 045002 (2011)
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Atomic layer deposition of scandium-based oxides
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physica status solidi (a) 211 (2) 409 (2014)
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Ceramics Science and Technology 291 (2012)
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Fabrication and Characterization of Polymer-Enhanced TSVs, Inductors, and Antennas for Mixed-Signal Silicon Interposer Platforms
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IEEE Transactions on Components, Packaging and Manufacturing Technology 6 (3) 455 (2016)
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Oxygen vacancy in Al2O3: Photoluminescence study and first-principle simulation
V.A. Pustovarov, T.V. Perevalov, V.A. Gritsenko, T.P. Smirnova and A.P. Yelisseyev
Thin Solid Films 519 (19) 6319 (2011)
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K. Xiong, J. Robertson and S. J. Clark
Journal of Applied Physics 99 (4) 044105 (2006)
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Progress of High-k Dielectrics Applicable to SONOS-Type Nonvolatile Semiconductor Memories
Zhenjie Tang, Zhiguo Liu and Xinhua Zhu
Transactions on Electrical and Electronic Materials 11 (4) 155 (2010)
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Physics-based surface potential, electric field and drain current model of aδp+Si1–xGexgate–drain underlap nanoscale n-TFET
Rupam Goswami, Brinda Bhowmick and Srimanta Baishya
International Journal of Electronics 1 (2016)
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Applied Physics Letters 89 (6) 062902 (2006)
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Interface-controlled high dielectric constant Al2O3/TiOx nanolaminates with low loss and low leakage current density for new generation nanodevices
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Journal of Applied Physics 114 (2) 027001 (2013)
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Interfacial atomic structures, energetics and band offsets of Ge:ZrO2 interfaces
Koon-Yiu Tse and John Robertson
Journal of Applied Physics 100 (9) 093713 (2006)
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High-temperature thermal stability study of 1 nm Al2O3deposited on InAs surfaces investigated by synchrotron radiation based photoemission spectroscopy
Rajesh Kumar Chellappan, Durga Rao Gajula, David McNeill and Greg Hughes
Journal of Physics D: Applied Physics 47 (5) 055107 (2014)
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Thin Solid Films 496 (1) 1 (2006)
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Interfacial and electrical properties of radio frequency sputtered ultra-thin TiO2 film for gate oxide applications
Madhuchhanda Nath and Asim Roy
Journal of Materials Science: Materials in Electronics 26 (11) 9107 (2015)
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Journal of Applied Physics 100 (5) 051610 (2006)
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The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers
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Microelectronics Reliability 49 (7) 716 (2009)
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Formation of thin-film HfO2/Si(100) structures by high-frequency magnetron sputtering
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Russian Microelectronics 40 (6) 383 (2011)
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JETP Letters 98 (11) 704 (2014)
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IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 61 (12) 2121 (2014)
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Materials Chemistry and Physics 130 (3) 1007 (2011)
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Electrical instability in LaLuO3 based metal–oxide–semiconductor capacitors and role of the metal electrodes
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Journal of Experimental and Theoretical Physics 116 (2) 323 (2013)
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Journal of The Electrochemical Society 158 (4) H410 (2011)
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Applied Physics Letters 94 (4) 042901 (2009)
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Thin Solid Films 557 272 (2014)
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Titania/Alumina Bilayer Gate Dielectrics for Ge MOS Devices: Frequency- and Temperature-Dependent Electrical Characteristics
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Electrochemical and Solid-State Letters 13 (9) G79 (2010)
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Micron 41 (1) 15 (2010)
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Applied Physics Letters 89 (11) 112121 (2006)
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IEEE Electron Device Letters 27 (6) 489 (2006)
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Applied Physics Letters 113 (1) 011102 (2018)
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A Comparative Study of Nano-SiO2 and Nano-TiO2 Fillers on Proton Conductivity and Dielectric Response of a Silicotungstic Acid–H3PO4–Poly(vinyl alcohol) Polymer Electrolyte
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Journal of Applied Physics 114 (1) 014106 (2013)
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Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiOx/W cross-point structure
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Applied Physics Letters 101 (24) 243109 (2012)
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Applied Physics Letters 88 (7) 072903 (2006)
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Applied Physics Letters 100 (1) 014102 (2012)
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Applied Physics Letters 100 (8) 082905 (2012)
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Indian Journal of Physics 94 (4) 493 (2020)
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Origin of Abnormal Dielectric Behavior and Chemical States in Amorphous CaCu3Ti4O12 Thin Films on a Flexible Polymer Substrate
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Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics
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The Journal of Physical Chemistry C 123 (4) 2579 (2019)
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Surface Modification on Solution Processable ZrO2 High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors
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The Journal of Physical Chemistry C 120 (18) 10062 (2016)
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Nano Letters 20 (10) 7087 (2020)
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Journal of Electronic Materials 49 (2) 1467 (2020)
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Novel Approach to Synthesize Nanostructured Gallium Oxide for Devices Operating in Harsh Environmental Conditions
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The Planar Multipole Resonance Probe: A Minimally Invasive Monitoring Concept for Plasma-Assisted Dielectric Deposition Processes
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Channel Engineering Assisted Performance Enhancement of Metal Gate Sub-10nm Ballistic SiNWFET for Futuristic Device Applications
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Silicon (2021)
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Rakshita Pritam Singh Dhar, Naveen Kumar, Cristina Medina-Bailon, Cesar Pascual Garcia and Vihar Petkov Georigiev
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Electrochemistry of the Silicon Oxide Dielectric Layer: Principles, Electrochemical Reactions, and Perspectives
Samuel J. Shin and Taek Dong Chung
Chemistry – An Asian Journal 16 (20) 3014 (2021)
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Epitaxial ferroelectric interfacial devices
C. A. F. Vaz, Y. J. Shin, M. Bibes, K. M. Rabe, F. J. Walker and C. H. Ahn
Applied Physics Reviews 8 (4) 041308 (2021)
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Controlled-crystallinity of SiO2/TiO2 hollow nanoparticles and their electroresponsive behaviors
Bomi Kim, Sohee Park and Seungae Lee
Journal of Industrial and Engineering Chemistry 104 203 (2021)
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Polymer-based dielectrics with high permittivity for electric energy storage: A review
Jun-Wei Zha, Ming-Sheng Zheng, Ben-Hui Fan and Zhi-Min Dang
Nano Energy 89 106438 (2021)
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Arunita Mukherjee and Rajendra Kumar Nagaria
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Exploratory studies on wet oxidation grown ternary hafnium tantalum oxide for
metal‐oxide semiconductor
application
Way Foong Lim and Hock Jin Quah
International Journal of Energy Research 46 (4) 4699 (2022)
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Controllable Excitation of Surface Plasmon Polaritons in Graphene‐Based Semiconductor Quantum Dot Waveguides
Mikhail Yu. Gubin, Alexei V. Prokhorov, Valentyn S. Volkov and Andrey B. Evlyukhin
Annalen der Physik 533 (11) 2100139 (2021)
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Chemical defect-dependent resistive switching characterization in CeO2 thin films
Tran Thi Be Lan, Yu-Teng Li, An-Cheng Aidan Sun, Hsi-Chuan Lu and Sea-Fue Wang
Materials Science in Semiconductor Processing 137 106177 (2022)
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Traceable Nanoscale Measurements of High Dielectric Constant by Scanning Microwave Microscopy
Damien Richert, José Morán-Meza, Khaled Kaja, Alexandra Delvallée, Djamel Allal, Brice Gautier and François Piquemal
Nanomaterials 11 (11) 3104 (2021)
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Structure and optical properties of ZrxHf1-xO2 films deposited by pulsed laser co-ablation of Zr and Hf targets with the assistance of oxygen plasma
Chujun Yao, Dong Zhang, Li Wu, Ning Xu, Jian Sun and Jiada Wu
Ceramics International 48 (1) 587 (2022)
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Raman spectroscopy estimation of the carrier concentration and the value of strain in monolayer graphene films grown on 4H-SiC
I A Eliseyev, V Yu Davydov, A N Smirnov, M O Nestoklon, P A Dementev, S P Lebedev, A A Lebedev, K A Bokai and D Yu Usachov
Journal of Physics: Conference Series 1400 (5) 055037 (2019)
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DFT based estimation of CNT parameters and simulation-study of GAA CNTFET for nano scale applications
Bhoop Singh, Prasad B and Dinesh Kumar
Materials Research Express 7 (1) 015916 (2020)
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Tolerance against conducting filament formation in nanosheet-derived titania thin films
Masaya Sato, Masahiro Hara, Asami Funatsu and Ryo Nouchi
Nano Express 1 (1) 010034 (2020)
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A substitution method for nanoscale capacitance calibration using scanning microwave microscopy
José A Morán-Meza, Alexandra Delvallée, Djamel Allal and François Piquemal
Measurement Science and Technology 31 (7) 074009 (2020)
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Capacitor-type thin-film heat flow switching device
Keisuke Hirata, Takuya Matsunaga, Saurabh Singh, Masaharu Matsunami and Tsunehiro Takeuchi
Japanese Journal of Applied Physics 60 (12) 124004 (2021)
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PVDF–BaSrTiO3 nanocomposites for flexible electrical energy storage devices
Shiva Adireddy, Venkata Sreenivas Puli, Samuel Charles Sklare, Tiffany Jialin Lou, Brian Charles Riggs, Ravinder Elupula, Scott Michael Grayson and Douglas Brian Chrisey
Emerging Materials Research 3 (6) 265 (2014)
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Substrate-dependent synergistic many-body effects in atomically thin two-dimensional
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Shreyasi Das, Rup K. Chowdhury, Debjani Karmakar, Soumen Das and Samit K. Ray
Physical Review Materials 5 (12) (2021)
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Performance enhancement of recessed silicon channel double gate junctionless field-effect-transistor using TCAD tool
Sandeep Kumar, Arun Kumar Chatterjee and Rishikesh Pandey
Journal of Computational Electronics 20 (6) 2317 (2021)
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Range-separated hybrid functionals for mixed dimensional heterojunctions: Application to phthalocyanines/MoS2
Qunfei Zhou, Zhen-Fei Liu, Tobin J. Marks and Pierre Darancet
APL Materials 9 (12) 121112 (2021)
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Caleb E. Glaser, Andrew T. Binder, Luke Yates, Andrew A. Allerman, Daniel F. Feezell and Robert J. Kaplar
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50 Ω transmission lines with extreme wavelength compression based on superconducting nanowires on high-permittivity substrates
Daniel F. Santavicca, Marco Colangelo, Carleigh R. Eagle, Maitri P. Warusawithana and Karl K. Berggren
Applied Physics Letters 119 (25) 252601 (2021)
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Ultrashort pulsed laser ablation of zirconia-alumina composites for implant applications
Jide Han, Olivier Malek, Jozef Vleugels, Annabel Braem and Sylvie Castagne
Journal of Materials Processing Technology 299 117335 (2022)
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Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures
Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Francesca Monforte, Guglielmo Guido Condorelli, Fabrizio Roccaforte, Filippo Giannazzo and Raffaella Lo Nigro
ACS Applied Electronic Materials 4 (1) 406 (2022)
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Bunseng Chan, Charlie Soh, Kang Eng Siew, Hui Seng Kheong, Lim Wei Jer, Ismail Saad and Nurmin Bolong
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Subthreshold Swing of 59 mV decade
−1
in Nanoscale Flexible Ultralow‐Voltage Organic Transistors
Michael Geiger, Robin Lingstädt, Tobias Wollandt, Julia Deuschle, Ute Zschieschang, Florian Letzkus, Joachim N. Burghartz, Peter A. Aken, R. Thomas Weitz and Hagen Klauk
Advanced Electronic Materials 8 (5) 2101215 (2022)
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Electrical control of all-optical graphene switches
Mohammed Alaloul and Jacob B. Khurgin
Optics Express 30 (2) 1950 (2022)
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Phase Properties of Different HfO2 Polymorphs: A DFT-Based Study
Emiliano Laudadio, Pierluigi Stipa, Luca Pierantoni and Davide Mencarelli
Crystals 12 (1) 90 (2022)
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Analysis of gate engineered asymmetric junctionless double gate MOSFET for varying operating conditions
Namrata Mendiratta, Suman Lata Tripathi and Bhanu Prakash Kolla
IOP Conference Series: Materials Science and Engineering 872 (1) 012012 (2020)
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Performance Improvement in E-Gun Deposited SiOx- Based RRAM Device by Switching Material Thickness Reduction
Sourav Roy and Siddheswar Maikap
Journal of Physics: Conference Series 2161 (1) 012040 (2022)
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Sabina Abdul Hadi, Rida Gadhafi, Zayed Ahmad, Maryam Ahli, Ali Mohammed, Maher AlQassab and Wathiq Mansoor
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Numerical simulation of analog metrics and parasitic capacitances of GaAs GS-GAA FinFET for ULSI switching applications
Bhavya Kumar and Rishu Chaujar
The European Physical Journal Plus 137 (1) (2022)
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Solution-processed high performance HIZO thin film transistor with AZO gate dielectric
Gao Ya-Na, Li Xi-Feng and Zhang Jian-Hua
Acta Physica Sinica 63 (11) 118502 (2014)
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Comparison between memory characteristics of MONOS memory with LaON/SiO2 or HfON/SiO2 as dual-tunnel layer
He Mei-Lin, Xu Jing-Ping, Chen Jian-Xiong and Liu Lu
Acta Physica Sinica 62 (23) 238501 (2013)
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A Tour‐Guide through Carbon Nitride‐Land: Structure‐ and Dimensionality‐Dependent Properties for Photo(Electro)Chemical Energy Conversion and Storage
Vincent Wing‐hei Lau and Bettina V. Lotsch
Advanced Energy Materials 12 (4) 2101078 (2022)
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Artificial Neurons and Synapses Based on Al/a-SiNxOy:H/P+-Si Device with Tunable Resistive Switching from Threshold to Memory
Kangmin Leng, Xu Zhu, Zhongyuan Ma, Xinyue Yu, Jun Xu, Ling Xu, Wei Li and Kunji Chen
Nanomaterials 12 (3) 311 (2022)
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Comparison of Electrical Characteristics of Si Homojunction and SiGe Heterojunction 14 nm SOI FinFET
Samjot Kaur Aujla and Navneet Kaur
Journal of The Institution of Engineers (India): Series B (2022)
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Influence of temperature and dimension in a 4H-SiC vertical power MOSFET
M H Alqaysi, A Martinez, B Ubochi, S Batcup and K Ahmeda
Engineering Research Express 2 (4) 045020 (2020)
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Ultra-power-efficient heterogeneous III–V/Si MOSCAP (de-)interleavers for DWDM optical links
Stanley Cheung, Geza Kurczveil, Yingtao Hu, Mingye Fu, Yuan Yuan, Di Liang and Raymond G. Beausoleil
Photonics Research 10 (2) A22 (2022)
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Design Space Exploration for Selector Diode-STTRAM Crossbar Arrays
Swaroop Ghosh, Rashmi Jha, Anirudh Iyengar and Rekha Govindaraj
IEEE Transactions on Magnetics 54 (6) 1 (2018)
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Passivated Porous Silicon Membranes and Their Application to Optical Biosensing
Clara Whyte Ferreira, Roselien Vercauteren and Laurent Francis
Micromachines 13 (1) 10 (2021)
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Rectifying Characteristics of Resonant Tunneling MIS Devices Using Ultra-Thin High-k Oxides Deposited by ALD
Hector Uribe-Vargas, Joel Molina-Reyes, Eduardo Ortega and Arturo Ponce
IEEE Electron Device Letters 39 (9) 1461 (2018)
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Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf
x
Zr1-x
O2/Interlayer/Si (MFIS) Gate Structure
Fengbin Tian, Shujing Zhao, Hao Xu, Jinjuan Xiang, Tingting Li, Wenjuan Xiong, Jiahui Duan, Junshuai Chai, Kai Han, Xiaolei Wang, Wenwu Wang and Tianchun Ye
IEEE Transactions on Electron Devices 68 (11) 5872 (2021)
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Recombination Analysis of Tunnel Oxide Passivated Contact Solar Cells
Suchismita Mitra, Hemanta Ghosh, Hiranmay Saha and Kunal Ghosh
IEEE Transactions on Electron Devices 66 (3) 1368 (2019)
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Simulation and investigations on semiconductor materials and devices with surround gate geometry for high performance and low power nano scale applications
Bhoop Singh, B. Prasad and Dinesh Kumar
IOP Conference Series: Materials Science and Engineering 804 (1) 012033 (2020)
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Reducing the power consumption of two-dimensional logic transistors
Weisheng Li, Hongkai Ning, Zhihao Yu, Yi Shi and Xinran Wang
Journal of Semiconductors 40 (9) 091002 (2019)
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Effect of oxide and interface traps on electrical characteristics of post-deposition annealed HfSiO4/n-Si structures
Aysegul Kahraman and Ercan Yilmaz
Semiconductor Science and Technology 36 (4) 045004 (2021)
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HfO2-based ferroelectrics: From enhancing performance, material design, to applications
Haiyan Chen, Xuefan Zhou, Lin Tang, Yonghong Chen, Hang Luo, Xi Yuan, Chris R. Bowen and Dou Zhang
Applied Physics Reviews 9 (1) 011307 (2022)
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Room-temperature and high-quality HfO2/SiO2 gate stacked film grown by neutral beam enhanced atomic layer deposition
Beibei Ge, Daisuke Ohori, Yi-Ho Chen, Takuya Ozaki, Kazuhiko Endo, Yiming Li, Jenn-Hwan Tarng and Seiji Samukawa
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Doping α-Al2O3 to reduce its hydrogen permeability: Thermodynamic assessment of hydrogen defects and solubility from first principles
Vrindaa Somjit and Bilge Yildiz
Acta Materialia 169 172 (2019)
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Effect of impurities from deposition precursors on the electronic properties of Si/SiO2 interfaces
Hu Li, Kouji Inagaki and Yoshitada Morikawa
Journal of Applied Physics 131 (5) 055306 (2022)
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An Accurate Model of Threshold Voltage and Effect of High-K Material for Fully Depleted Graded Channel DMDG MOSFET
Himeli Chakrabarti, Reshmi Maity, S. Baishya and N. P. Maity
Silicon (2022)
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Enhancement of Tunneling CNTFET Performance Using a High-k Dielectric Pocket
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ECS Journal of Solid State Science and Technology 9 (10) 101002 (2020)
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Design of a low power silicon-plasmonic hybrid electro-optic modulator relied on ITO
Omid Abbaszadeh-Azar and Kambiz Abedi
Optical Materials 125 112081 (2022)
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Hong‐Liang Lu and David Wei Zhang
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Local structural investigation of hafnia-zirconia polymorphs in powders and thin films by X-ray absorption spectroscopy
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Acta Materialia 180 158 (2019)
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Microwave Flexible Electronics Directly Transformed from Foundry‐Produced, Multilayered Monolithic Integrated Circuits
Guoxuan Qin, Yei Hwan Jung, Huilong Zhang, Ningyue Jiang, Pingxi Ma, Scott Stetson, Marco Racanelli and Zhenqiang Ma
Advanced Electronic Materials 2101350 (2022)
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Ramkumar Natarajan, Eswaran Parthasarathy and P. Murugapandiyan
Silicon (2022)
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Structural, electronic and electrical conduction behaviour of Gd3+ doped Ca2−xY2O5 metal oxide ceramic synthesised by solid state reaction method
Sadhana Agrawal
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An overview of conventional and new advancements in high kappa thin film deposition techniques in metal oxide semiconductor devices
Premdass Devaray, Sharifah Fatmadiana Wan Muhammad Hatta and Yew Hoong Wong
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Stefan Slesazeck, Halid Mulaosmanovic, Michael Hoffmann, Uwe Schroeder, Thomas Mikolajick and Benjamin Max
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Maria Letizia Terranova and Emanuela Tamburri
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Impact of annealing on electric and elastic properties of 10-nm Hf0.5Zr0.5O2 films prepared on Si by sputtering
Leonid Bolotov, Shinji Migita, Ryouta Fujio, Manabu Ishimaru, Shogo Hatayama and Noriyuki Uchida
Microelectronic Engineering 258 111770 (2022)
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Recent progress in metasurface-enabled optical waveplates
Yadong Deng, Ziru Cai, Yingtao Ding, Sergey I. Bozhevolnyi and Fei Ding
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Hafnium dioxide effect on the electrical properties of M/n-GaN structure
Sadoun Ali, Mansouri Sedik, Chellali Mohammed, Lakhdar Nacereddine, Hima Abdelkader and Benamara Zineb
Materials Science-Poland 38 (1) 165 (2020)
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Temperature-dependent effect of modulation in graphene-supported metamaterials
Yevhenii M Morozov, Anatoliy S Lapchuk, Iryna S Protsak, Andriy A Kryuchyn and Ivan P Nevirkovets
New Journal of Physics 24 (4) 043006 (2022)
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Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?
Michael Waltl, Theresia Knobloch, Konstantinos Tselios, Lado Filipovic, Bernhard Stampfer, Yoanlys Hernandez, Dominic Waldhör, Yury Illarionov, Ben Kaczer and Tibor Grasser
Advanced Materials 2201082 (2022)
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Near‐Infrared Electroluminescent Light‐Emitting Transistors Based on CVD‐Synthesized Ambipolar ReSe
2
Nanosheets
Roshan Jesus Mathew, Kai‐Hsiang Cheng, Ching‐Hong Hsu, Pradyumna Kumar Chand, Christy Roshini Paul Inbaraj, Yu‐Lou Peng, Jung‐Yen Yang, Chih‐Hao Lee and Yit‐Tsong Chen
Advanced Optical Materials 10 (8) 2102580 (2022)
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Electronic excitation-induced tunneling and charge-trapping explored by in situ electrical characterization in Ni/HfO2/β-Ga2O3 metal–oxide–semiconductor capacitors
N. Manikanthababu, B.R. Tak, K. Prajna, S. Sarkar, R.C. Meena, K. Asokan, S.R. Barman, R. Singh and B.K. Panigrahi
Materials Science and Engineering: B 281 115716 (2022)
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Ab Initio Calculations of Electric-field Gradient in Ferroelectric HfO2
Fumitatsu Iwase
Journal of the Physical Society of Japan 91 (5) (2022)
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Effects of interface atomic rearrangement on band alignments in Ge/a-Al2O3/Au heterostructures from first-principles
Eunjung Ko and Jung-Hae Choi
Applied Surface Science 594 153491 (2022)
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Photovoltaic/photo-electrocatalysis integration for green hydrogen: A review
Piyali Chatterjee, Mounika Sai Krishna Ambati, Amit K. Chakraborty, Sabyasachi Chakrabortty, Sajal Biring, Seeram Ramakrishna, Terence Kin Shun Wong, Avishek Kumar, Raghavendra Lawaniya and Goutam Kumar Dalapati
Energy Conversion and Management 261 115648 (2022)
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Bidirectional Selector Realized Through Multilayer Tunnel Barrier Engineering
Dequan Dong, Huikai He, Jian Xia, Rui Yang and Xiangshui Miao
IEEE Journal of the Electron Devices Society 10 367 (2022)
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High Performance All Nonmetal SiNx Resistive Random Access Memory with Strong Process Dependence
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Scientific Reports 10 (1) (2020)
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Significantly improved high k dielectric performance: Rare earth oxide as a passivation layer laminated with TiO2 film
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Journal of Rare Earths (2022)
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Analysis of the (100)Si/LaAlO3 structure by electron spin resonance: nature of the interface
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Journal of Materials Science: Materials in Electronics 18 (7) 735 (2007)
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Surface‐Supported Metal‐Organic Framework as Low‐Dielectric‐Constant Thin Films for Novel Hybrid Electronics
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Advanced Electronic Materials 2200175 (2022)
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Effect of ammonium salt on corrosion of pipelines and components in a crude oil distillation column: Electrochemical and AIMD studies
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Corrosion Science 203 110362 (2022)
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Chih-Feng Yen, Hung-Chang Hsu, Yu-Ya Huang and Shen-Hao Tsao
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Growth and characterization of Ti-based films obtained from two selected precursors: H2O, TiCl4, Ti(N(CH3)2)4 or Al2(CH3)6 by the ALD method
Lukasz Wachnicki, Sylwia Gieraltowska, Bartlomiej S. Witkowski, Marek Godlewski and Elzbieta Guziewicz
Materials Science in Semiconductor Processing 148 106792 (2022)
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IGZO synaptic thin-film transistors with embedded AlO
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Yeojin Lee, Hyerin Jo, Kooktae Kim, Hyobin Yoo, Hyeonjun Baek, Dong Ryeol Lee and Hongseok Oh
Applied Physics Express 15 (6) 061005 (2022)
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TCAD investigation of ferroelectric based substrate MOSFET for digital application
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Silicon 14 (9) 5075 (2022)
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LiNbO3-based sol-gel composite ultrasonic transducer poled at low temperatures
Naoki Kambayashi, Naoki Zaito, Hiroaki Akatsuka and Makiko Kobayashi
Japanese Journal of Applied Physics 61 (SG) SG1060 (2022)
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Polymer thin film transistor vapor sensor analysis, drift suppression, and response optimization via circuit level strategy
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Journal of Computational Electronics (2022)
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