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Journal of Materials Science: Materials in Electronics 26 (6) 3506 (2015)
DOI: 10.1007/s10854-015-2862-1
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Plasma-Enhanced Methane Direct Conversion over Particle-Size Adjusted MOx/Al2O3 (M = Ti and Mg) Catalysts

Palraj Kasinathan, Sunyoung Park, Woon Choon Choi, et al.
Plasma Chemistry and Plasma Processing 34 (6) 1317 (2014)
DOI: 10.1007/s11090-014-9574-9
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In situ monitoring of electrostriction in anodic and thermal silicon dioxide thin films

Frédéric Blaffart, Quentin Van Overmeere, Thomas Pardoen and Joris Proost
Journal of Solid State Electrochemistry 17 (7) 1945 (2013)
DOI: 10.1007/s10008-013-2036-0
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First-Principles Studies of the Electronic and Dielectric Properties of Si/SiO2/HfO2Interfaces

Yongjin Park, Ki-jeong Kong, Hyunju Chang and Mincheol Shin
Japanese Journal of Applied Physics 52 (4R) 041803 (2013)
DOI: 10.7567/JJAP.52.041803
See this article

Delayed Ignition of Autocatalytic Combustion Precursors: Low-Temperature Nanomaterial Binder Approach to Electronically Functional Oxide Films

Myung-Gil Kim, Jonathan W. Hennek, Hyun Sung Kim, et al.
Journal of the American Chemical Society 134 (28) 11583 (2012)
DOI: 10.1021/ja301941q
See this article

Energy distribution extraction of negative charges responsible for positive bias temperature instability

Shang-Qing Ren, Hong Yang, Wen-Wu Wang, et al.
Chinese Physics B 24 (7) 077304 (2015)
DOI: 10.1088/1674-1056/24/7/077304
See this article

Nonlinear polarization responses of ZrO2-based thin films fabricated by chemical solution deposition

Shingo Yoneda, Tadasu Hosokura, Masahiko Kimura, Akira Ando and Kosuke Shiratsuyu
Japanese Journal of Applied Physics 56 (10S) 10PF07 (2017)
DOI: 10.7567/JJAP.56.10PF07
See this article

Effects of Postdeposition Annealing in Argon Ambient on Metallorganic Decomposed CeO[sub 2] Gate Spin Coated on Silicon

H. J. Quah, K. Y. Cheong, Z. Hassan, et al.
Journal of The Electrochemical Society 157 (1) H6 (2010)
DOI: 10.1149/1.3244214
See this article

Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering

Hock Jin Quah and Kuan Yew Cheong
Journal of Alloys and Compounds 529 73 (2012)
DOI: 10.1016/j.jallcom.2012.02.122
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Effects of N2O Postdeposition Annealing on Metal-Organic Decomposed CeO2 Gate Oxide Spin-Coated on GaN Substrate

H. J. Quah, K. Y. Cheong, Z. Hassan and Z. Lockman
Journal of The Electrochemical Society 158 (4) H423 (2011)
DOI: 10.1149/1.3548542
See this article

Physical and electrical characteristics of metal-organic decomposed CeO2 gate spin-coated on 4H-SiC

W. F. Lim, K. Y. Cheong and Z. Lockman
Applied Physics A 103 (4) 1067 (2011)
DOI: 10.1007/s00339-010-6039-8
See this article

Investigating phosphonate monolayer stability on ALD oxide surfaces

Brittany Branch, Manish Dubey, Aaron S. Anderson, et al.
Applied Surface Science 288 98 (2014)
DOI: 10.1016/j.apsusc.2013.09.128
See this article

Composite Polymer Electrolytes with Li7La3Zr2O12 Garnet-Type Nanowires as Ceramic Fillers: Mechanism of Conductivity Enhancement and Role of Doping and Morphology

Ting Yang, Jin Zheng, Qian Cheng, Yan-Yan Hu and Candace K. Chan
ACS Applied Materials & Interfaces 9 (26) 21773 (2017)
DOI: 10.1021/acsami.7b03806
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Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics

Mrinal K. Hota, Fwzah H. Alshammari, Khaled N. Salama and Husam N. Alshareef
ACS Applied Materials & Interfaces 9 (26) 21856 (2017)
DOI: 10.1021/acsami.7b03078
See this article

UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors

Emanuel Carlos, Rita Branquinho, Asal Kiazadeh, et al.
ACS Applied Materials & Interfaces 8 (45) 31100 (2016)
DOI: 10.1021/acsami.6b06321
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Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates

Seung Hyun Kim, So Yeong Joo, Hyun Soo Jin, Woo-Byoung Kim and Tae Joo Park
ACS Applied Materials & Interfaces 8 (32) 20880 (2016)
DOI: 10.1021/acsami.6b06643
See this article

Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects

Mahdieh Aghamohammadi, Reinhold Rödel, Ute Zschieschang, et al.
ACS Applied Materials & Interfaces 7 (41) 22775 (2015)
DOI: 10.1021/acsami.5b02747
See this article

Enhanced Electroresponse of Alkaline Earth Metal-Doped Silica/Titania Spheres by Synergetic Effect of Dispersion Stability and Dielectric Property

Chang-Min Yoon, Seungae Lee, Oug Jae Cheong and Jyongsik Jang
ACS Applied Materials & Interfaces 7 (34) 18977 (2015)
DOI: 10.1021/acsami.5b02388
See this article

Phthalocyanine-Based Organic Thin-Film Transistors: A Review of Recent Advances

Owen A. Melville, Benoît H. Lessard and Timothy P. Bender
ACS Applied Materials & Interfaces 7 (24) 13105 (2015)
DOI: 10.1021/acsami.5b01718
See this article

High-performance transparent thin-film transistor based on Y2O3/In2O3 with low interface traps

H. Z. Zhang, L. Y. Liang, A. H. Chen, et al.
Applied Physics Letters 97 (12) 122108 (2010)
DOI: 10.1063/1.3492852
See this article

Charge imbalance at oxide interfaces: How nature deals with it

J.-L. Maurice, I. Devos, M.-J. Casanove, et al.
Materials Science and Engineering: B 144 (1-3) 1 (2007)
DOI: 10.1016/j.mseb.2007.07.095
See this article

TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

Qi Xie, Jan Musschoot, Marc Schaekers, et al.
Electrochemical and Solid-State Letters 14 (5) G27 (2011)
DOI: 10.1149/1.3559770
See this article

Electronic and optical properties of Al2O3/SiO2thin films grown on Si substrate

Dahlang Tahir, Hyuk Lan Kwon, Hye Chung Shin, et al.
Journal of Physics D: Applied Physics 43 (25) 255301 (2010)
DOI: 10.1088/0022-3727/43/25/255301
See this article

Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET

Ji-Hyun Hur and Sanghun Jeon
JSTS:Journal of Semiconductor Technology and Science 16 (5) 630 (2016)
DOI: 10.5573/JSTS.2016.16.5.630
See this article

Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process

Shangqing Ren, Bo Tang, Hao Xu, et al.
Journal of Semiconductors 36 (1) 014007 (2015)
DOI: 10.1088/1674-4926/36/1/014007
See this article

Aqueous Combustion Synthesis of Aluminum Oxide Thin Films and Application as Gate Dielectric in GZTO Solution-Based TFTs

Rita Branquinho, Daniela Salgueiro, Lídia Santos, et al.
ACS Applied Materials & Interfaces 6 (22) 19592 (2014)
DOI: 10.1021/am503872t
See this article

Effect of nitrogen containing plasma on interface properties of sputtered ZrO2 thin films on silicon

Ashwath Rao, Anshuman Dwivedi, Manish Goswami and B.R. Singh
Materials Science in Semiconductor Processing 19 145 (2014)
DOI: 10.1016/j.mssp.2013.11.039
See this article

Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniques

D. Zade, K. Kakushima, T. Kanda, et al.
Microelectronic Engineering 88 (7) 1109 (2011)
DOI: 10.1016/j.mee.2011.03.068
See this article

High resolution photoemission study of interface formation between MgO and the selenium passivated InAs (100) surface

Rajesh Kumar Chellappan, Zheshen Li and Greg Hughes
Applied Surface Science 285 153 (2013)
DOI: 10.1016/j.apsusc.2013.08.021
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Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior

I. Goldfarb, F. Miao, J. Joshua Yang, et al.
Applied Physics A 107 (1) 1 (2012)
DOI: 10.1007/s00339-012-6856-z
See this article

Influence of the atomic layer deposition temperature on the structural and electrical properties of Al/Al2O3/p-Ge MOS structures

Martha A. Botzakaki, George Skoulatakis, Nikolaos Xanthopoulos, et al.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36 (1) 01A120 (2018)
DOI: 10.1116/1.5003375
See this article

Optical Properties of TiO2 Films Deposited by Reactive Electron Beam Sputtering

V. N. Kruchinin, T. V. Perevalov, V. V. Atuchin, et al.
Journal of Electronic Materials 46 (10) 6089 (2017)
DOI: 10.1007/s11664-017-5552-3
See this article

Electrostatic Self-Assembly: Understanding the Significance of the Solvent

Eric B. Lindgren, Ivan N. Derbenev, Armik Khachatourian, et al.
Journal of Chemical Theory and Computation 14 (2) 905 (2018)
DOI: 10.1021/acs.jctc.7b00647
See this article

Characterization of HfSiAlON/MoAlN PMOSFETs Fabricated by Using a Novel Gate-Last Process

Gao-Bo Xu, Qiu-Xia Xu, Hua-Xiang Yin, et al.
Chinese Physics Letters 30 (8) 087303 (2013)
DOI: 10.1088/0256-307X/30/8/087303
See this article

A Comparative Study of Nano-SiO2 and Nano-TiO2 Fillers on Proton Conductivity and Dielectric Response of a Silicotungstic Acid–H3PO4–Poly(vinyl alcohol) Polymer Electrolyte

Han Gao and Keryn Lian
ACS Applied Materials & Interfaces 6 (1) 464 (2014)
DOI: 10.1021/am4045103
See this article

Electronic structure of TiO2 rutile with oxygen vacancies: Ab initio simulations and comparison with the experiment

T. V. Perevalov and V. A. Gritsenko
Journal of Experimental and Theoretical Physics 112 (2) 310 (2011)
DOI: 10.1134/S1063776111010158
See this article

Comparative analysis of electrophysical properties of ceramic tantalum pentoxide coatings, deposited by electron beam evaporation and magnetron sputtering methods

N Donkov, E Mateev, V Safonov, et al.
Journal of Physics: Conference Series 558 012036 (2014)
DOI: 10.1088/1742-6596/558/1/012036
See this article

Dissolution Behaviors and Applications of Silicon Oxides and Nitrides in Transient Electronics

Seung-Kyun Kang, Suk-Won Hwang, Huanyu Cheng, et al.
Advanced Functional Materials 24 (28) 4427 (2014)
DOI: 10.1002/adfm.201304293
See this article

Ultrathin SiO2layer with a low leakage current density formed with ∼ 100% nitric acid vapor

Woo-Byoung Kim, Taketoshi Matsumoto and Hikaru Kobayashi
Nanotechnology 21 (11) 115202 (2010)
DOI: 10.1088/0957-4484/21/11/115202
See this article

Optical properties and band gap characterization of high dielectric constant oxides

O. Fursenko, J. Bauer, G. Lupina, et al.
Thin Solid Films 520 (14) 4532 (2012)
DOI: 10.1016/j.tsf.2011.10.195
See this article

Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications

Prashant Singh, Rajesh Kumar Jha, Rajat Kumar Singh and B. R. Singh
Applied Physics A 124 (2) (2018)
DOI: 10.1007/s00339-018-1555-z
See this article

Transport mechanisms of electrons and holes in dielectric films

Kamil A. Nasyrov and V.A. Gritsenko
Uspekhi Fizicheskih Nauk 183 (10) 1099 (2013)
DOI: 10.3367/UFNr.0183.201310h.1099
See this article

Electroluminescence from silicon-based light-emitting devices with erbium-doped TiO2 films annealed at different temperatures

Jinxin Chen, Zhifei Gao, Miaomiao Jiang, et al.
Journal of Applied Physics 122 (16) 163106 (2017)
DOI: 10.1063/1.4997858
See this article

Methodology for extraction of space charge density profiles at nanoscale from Kelvin probe force microscopy measurements

C Villeneuve-Faure, L Boudou, K Makasheva and G Teyssedre
Nanotechnology 28 (50) 505701 (2017)
DOI: 10.1088/1361-6528/aa9839
See this article

Thermal stability of ultrathinZrO2films and structure determination ofZrSi2islands on Si(100)

Frank Schönbohm, Christian Rolf Flüchter, Daniel Weier, et al.
Physical Review B 80 (16) 165323 (2009)
DOI: 10.1103/PhysRevB.80.165323
See this article

Structural and optical properties of post-annealed atomic-layer-deposited HfO 2 thin films on GaAs

N.S. Bennett, K. Cherkaoui, C.S. Wong, et al.
Thin Solid Films 569 104 (2014)
DOI: 10.1016/j.tsf.2014.08.025
See this article

High performance ink-jet printed diketopyrrolopyrrole-based copolymer thin-film transistors using a solution-processed aluminium oxide dielectric on a flexible substrate

Sung Hoon Kim, Il Kang, Youn Goo Kim, et al.
Journal of Materials Chemistry C 1 (13) 2408 (2013)
DOI: 10.1039/c3tc00718a
See this article

Low-voltage organic thin-film transistors based on solution-processed hybrid dielectrics: theoretical and experimental studies

Qiutan Ke, Qian Wu, Lijuan Liang, et al.
Semiconductor Science and Technology 32 (10) 104007 (2017)
DOI: 10.1088/1361-6641/aa8641
See this article

Valence number transition and silicate formation of cerium oxide films on Si(100)

M. Mamatrishat, M. Kouda, K. Kakushima, et al.
Vacuum 86 (10) 1513 (2012)
DOI: 10.1016/j.vacuum.2012.02.050
See this article

Maximizing the Dielectric Response of Molecular Thin Films via Quantum Chemical Design

Henry M. Heitzer, Tobin J. Marks and Mark A. Ratner
ACS Nano 8 (12) 12587 (2014)
DOI: 10.1021/nn505431p
See this article

A high-performance channel engineered charge-plasma-based MOSFET with high-κ spacer

Chan Shan, Ying Wang, Xin Luo, et al.
Superlattices and Microstructures 112 499 (2017)
DOI: 10.1016/j.spmi.2017.10.002
See this article

Wide band gap of Strontium doped Hafnium oxide nanoparticles for opto-electronic device applications – Synthesis and characterization

J. Manikantan, H.B. Ramalingam, B. Chandar Shekar, et al.
Materials Letters 186 42 (2017)
DOI: 10.1016/j.matlet.2016.08.026
See this article

Charge transport mechanism in amorphous alumina

Yu. N. Novikov, V. A. Gritsenko and K. A. Nasyrov
Applied Physics Letters 94 (22) 222904 (2009)
DOI: 10.1063/1.3151861
See this article

High-Performance Single-Electron Transistor Based on Metal–Organic Complex of Thiophene: First Principle Study

Archana Sharma, Md. Shahzad Khan, Anurag Srivastava, Mushahid Husain and Mohd. Shahid Khan
IEEE Transactions on Electron Devices 64 (11) 4628 (2017)
DOI: 10.1109/TED.2017.2756106
See this article

A Cost-Effective $\hbox{Ni/Nb}_{2}\hbox{O}_{5}\hbox{/} \hbox{Al}_{2}\hbox{O}_{3}\hbox{/}\hbox{Ni}_{2}\hbox{Si}$ Metal–Insulator–Metal Capacitor Processed at 300 $^{\circ}\hbox{C}$ Using Laser Annealing and a Fully Silicided Amorphous Silicon Bottom Electrode

Jung-Hsiang Lee, Yi-Chang Lin and Ming-Yu Chen
IEEE Transactions on Electron Devices 58 (11) 3920 (2011)
DOI: 10.1109/TED.2011.2165074
See this article

Effect of Postdeposition Annealing in Oxygen Ambient on Gallium-Nitride-Based MOS Capacitors With Cerium Oxide Gate

Hock Jin Quah, Kuan Yew Cheong, Zainuriah Hassan and Zainovia Lockman
IEEE Transactions on Electron Devices 58 (1) 122 (2011)
DOI: 10.1109/TED.2010.2087024
See this article

Advances in Electronics, Communication and Computing

Bhubon Chandra Mech and Jitendra Kumar
Lecture Notes in Electrical Engineering, Advances in Electronics, Communication and Computing 443 415 (2018)
DOI: 10.1007/978-981-10-4765-7_44
See this article

Generalized Predictive Control of Temperature on an Atomic Layer Deposition Reactor

Wen-Jie He, Hai-Tao Zhang, Zhiyong Chen, et al.
IEEE Transactions on Control Systems Technology 23 (6) 2408 (2015)
DOI: 10.1109/TCST.2015.2404898
See this article

Non-thermal plasma-catalytic decomposition of volatile organic compounds using alumina supported metal oxide nanoparticles

Mani Sanjeeva Gandhi and Young Sun Mok
Surface and Coatings Technology 259 12 (2014)
DOI: 10.1016/j.surfcoat.2014.07.085
See this article

Ge nanocrystals with highly uniform size distribution deposited on alumina at room temperature by pulsed laser deposition: structural, morphological, and charge trapping properties

J. Martín-Sánchez, L. Marques, E. M. F. Vieira, et al.
Journal of Nanoparticle Research 14 (5) 843 (2012)
DOI: 10.1007/s11051-012-0843-3
See this article

Optical Line Width Broadening Mechanisms at the 10 kHz Level in Eu3+:Y2O3 Nanoparticles

John G. Bartholomew, Karmel de Oliveira Lima, Alban Ferrier and Philippe Goldner
Nano Letters 17 (2) 778 (2017)
DOI: 10.1021/acs.nanolett.6b03949
See this article

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation

Amritesh Rai, Amithraj Valsaraj, Hema C.P. Movva, et al.
Nano Letters 15 (7) 4329 (2015)
DOI: 10.1021/acs.nanolett.5b00314
See this article

Direct Measurement of Dirac Point Energy at the Graphene/Oxide Interface

Kun Xu, Caifu Zeng, Qin Zhang, et al.
Nano Letters 13 (1) 131 (2013)
DOI: 10.1021/nl303669w
See this article

Transformation: nanotechnology—challenges in transistor design and future technologies

Bianka Ullmann and Tibor Grasser
e & i Elektrotechnik und Informationstechnik 134 (7) 349 (2017)
DOI: 10.1007/s00502-017-0534-y
See this article

Elemental diffusion study of Ge/Al 2 O 3 and Ge/AlN/Al 2 O 3 interfaces upon post deposition annealing

Yunna Zhu, Xinglu Wang, Chen Liu, et al.
Surfaces and Interfaces 9 51 (2017)
DOI: 10.1016/j.surfin.2017.07.006
See this article

Growth and electrical properties of AlOx grown by mist chemical vapor deposition

AIP Advances 3 (3) 032135 (2013)
DOI: 10.1063/1.4798303
See this article

Structure and physical properties of W-doped HfO2 thin films deposited by simultaneous RF and DC magnetron sputtering

Su-Shia Lin and Chung-Sheng Liao
Surface and Coatings Technology 232 46 (2013)
DOI: 10.1016/j.surfcoat.2013.04.051
See this article

Origin of Abnormal Dielectric Behavior and Chemical States in Amorphous CaCu3Ti4O12 Thin Films on a Flexible Polymer Substrate

Chan Su Han, Hong Rak Choi, Hong Je Choi and Yong Soo Cho
Chemistry of Materials 29 (14) 5915 (2017)
DOI: 10.1021/acs.chemmater.7b01346
See this article

Giant dielectric constant in TiO2/Al2O3 nanolaminates grown on doped silicon substrate by pulsed laser deposition

P. Walke, R. Bouregba, A. Lefevre, et al.
Journal of Applied Physics 115 (9) 094103 (2014)
DOI: 10.1063/1.4867780
See this article

Volatilities of Actinide and LanthanideN,N-Dimethylaminodiboranate Chemical Vapor Deposition Precursors: A DFT Study

Bess Vlaisavljevich, Pere Miró, Drew Koballa, et al.
The Journal of Physical Chemistry C 116 (44) 23194 (2012)
DOI: 10.1021/jp305691y
See this article

On the Band Alignment and Fermi Level Pinning at Compound Semiconductor Interfaces

Hideki HASEGAWA
Hyomen Kagaku 29 (2) 76 (2008)
DOI: 10.1380/jsssj.29.76
See this article

Effect of oxygen/argon gas ratio on the structure and optical properties of sputter-deposited nanocrystalline HfO2 thin films

C.V. Ramana, M. Vargas, G.A. Lopez, et al.
Ceramics International 41 (5) 6187 (2015)
DOI: 10.1016/j.ceramint.2014.12.141
See this article

Reduction of Monoclinic HfO2: A Cascading Migration of Oxygen and Its Interplay with a High Electric Field

Boubacar Traoré, Philippe Blaise and Benoît Sklénard
The Journal of Physical Chemistry C 120 (43) 25023 (2016)
DOI: 10.1021/acs.jpcc.6b06913
See this article

Kinetic Monte Carlo Simulations of Defects in Anatase Titanium Dioxide

Benedikt Weiler, Alessio Gagliardi and Paolo Lugli
The Journal of Physical Chemistry C 120 (18) 10062 (2016)
DOI: 10.1021/acs.jpcc.6b01687
See this article

Surface Modification on Solution Processable ZrO2 High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors

Wenqiang He, Wenchao Xu, Qiang Peng, et al.
The Journal of Physical Chemistry C 120 (18) 9949 (2016)
DOI: 10.1021/acs.jpcc.6b03638
See this article

Protons in Oxysulfides, Oxysulfates, and Sulfides: A First-Principles Study of La2O2S, La2O2SO4, SrZrS3, and BaZrS3

Jonathan M. Polfus, Truls Norby and Rune Bredesen
The Journal of Physical Chemistry C 119 (42) 23875 (2015)
DOI: 10.1021/acs.jpcc.5b08278
See this article

Atomic Layer Deposition of Gd2O3 and Dy2O3: A Study of the ALD Characteristics and Structural and Electrical Properties

Ke Xu, Ramdurai Ranjith, Apurba Laha, et al.
Chemistry of Materials 24 (4) 651 (2012)
DOI: 10.1021/cm2020862
See this article

Performance and Reliability of Electrowetting-on-Dielectric (EWOD) Systems Based on Tantalum Oxide

Marcel Mibus and Giovanni Zangari
ACS Applied Materials & Interfaces 9 (48) 42278 (2017)
DOI: 10.1021/acsami.7b07366
See this article

Enhancing the efficiency of alternating current driven organic light-emitting devices by optimizing the operation frequency

Markus Fröbel, Ajay Perumal, Tobias Schwab, et al.
Organic Electronics 14 (3) 809 (2013)
DOI: 10.1016/j.orgel.2013.01.005
See this article

Erratum: Field-effect induced tunability in hyperbolic metamaterials [Phys. Rev. B 92, 184101 (2015)]

Georgia T. Papadakis and Harry A. Atwater
Physical Review B 96 (17) (2017)
DOI: 10.1103/PhysRevB.96.179903
See this article

Photoswitching of the dielectric property of salicylideneaniline

Kodai Shimayama, Mohammad Razaul Karim, Saliu Alao Amolegbe, et al.
Journal of Inclusion Phenomena and Macrocyclic Chemistry 82 (1-2) 219 (2015)
DOI: 10.1007/s10847-015-0524-9
See this article

Perspective of zinc oxide based thin film transistors: a comprehensive review

Kavindra Kandpal and Navneet Gupta
Microelectronics International 35 (1) 52 (2018)
DOI: 10.1108/MI-10-2016-0066
See this article

Performance of THz Components Based on Microstrip PECVD SiNx Technology

Matvey Finkel, Holger Thierschmann, Luca Galatro, et al.
IEEE Transactions on Terahertz Science and Technology 7 (6) 765 (2017)
DOI: 10.1109/TTHZ.2017.2759507
See this article

Electrical Properties of Ge pMOSFETs With Ultrathin EOT HfO₂/AlOₓ/GeOₓ Gate-Stacks and NiGe Metal Source/Drain

Rui Zhang, Junkang Li and Xiao Yu
IEEE Transactions on Electron Devices 1 (2017)
DOI: 10.1109/TED.2017.2761885
See this article

Rigorous numerical modeling of scattering-type scanning near-field optical microscopy and spectroscopy

Xinzhong Chen, Chiu Fan Bowen Lo, William Zheng, et al.
Applied Physics Letters 111 (22) 223110 (2017)
DOI: 10.1063/1.5008663
See this article

High-density remote plasma sputtering of high-dielectric-constant amorphous hafnium oxide films

Flora M. Li, Bernhard C. Bayer, Stephan Hofmann, et al.
physica status solidi (b) 250 (5) 957 (2013)
DOI: 10.1002/pssb.201248520
See this article

Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric

K.S. Min, C. Park, C.Y. Kang, et al.
Solid-State Electronics 82 82 (2013)
DOI: 10.1016/j.sse.2012.11.008
See this article

Dielectric Characteristics of Hafnia Thin Films

D. A. Golosov, S. M. Zavadski, S. N. Melnikov and N. Villa
Nanotechnologies in Russia 12 (9-10) 529 (2017)
DOI: 10.1134/S1995078017050020
See this article

An approach to enhance memory retention capacity in MFIS structures using different insulating buffer layer

Prashant Singh, Rajat Kumar Singh and B. R. Singh
Ferroelectrics 519 (1) 213 (2017)
DOI: 10.1080/00150193.2017.1361264
See this article

Two-dimensional (2D) analytical investigation of an n-type junctionless gate-all-around tunnel field-effect transistor (JL GAA TFET)

Ajay, Rakhi Narang, Manoj Saxena and Mridula Gupta
Journal of Computational Electronics 17 (2) 713 (2018)
DOI: 10.1007/s10825-018-1151-7
See this article

Hydrolysis of ZrCl4and HfCl4: The Initial Steps in the High-Temperature Oxidation of Metal Chlorides to Produce ZrO2and HfO2

Zongtang Fang and David A. Dixon
The Journal of Physical Chemistry C 117 (15) 7459 (2013)
DOI: 10.1021/jp400228d
See this article

Junctionless Tunnel Field Effect Transistor

Bahniman Ghosh and Mohammad Waseem Akram
IEEE Electron Device Letters 34 (5) 584 (2013)
DOI: 10.1109/LED.2013.2253752
See this article

A Dual-Gate Graphene FET Model for Circuit Simulation—SPICE Implementation

Ime J. Umoh, Tom J. Kazmierski and Bashir M. Al-Hashimi
IEEE Transactions on Nanotechnology 12 (3) 427 (2013)
DOI: 10.1109/TNANO.2013.2253490
See this article

Novel Photo-Defined Polymer-Enhanced Through-Silicon Vias for Silicon Interposers

Paragkumar A. Thadesar and Muhannad S. Bakir
IEEE Transactions on Components, Packaging and Manufacturing Technology 3 (7) 1130 (2013)
DOI: 10.1109/TCPMT.2013.2261122
See this article

Effect of Space Radiation on the Leakage Current of MEMS Insulators

Steven T. Patton, Albert J. Frasca, Joseph W. Talnagi, et al.
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DOI: 10.1109/TNS.2013.2263840
See this article

Electromagnetic Performance of RF NEMS Graphene Capacitive Switches

Pankaj Sharma, Julien Perruisseau-Carrier, Clara Moldovan and Adrian Mihai Ionescu
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DOI: 10.1109/TNANO.2013.2290945
See this article

Improved Performance of Amorphous InGaZnO Thin-Film Transistor With $\hbox{Ta}_{2}\hbox{O}_{5}$ Gate Dielectric by Using La Incorporation

L. X. Qian, X. Z. Liu, C. Y. Han and P. T. Lai
IEEE Transactions on Device and Materials Reliability 14 (4) 1056 (2014)
DOI: 10.1109/TDMR.2014.2365702
See this article

Impact of Uniaxial Strain on Random Telegraph Noise in High- $k$ /Metal Gate pMOSFETs

Po-Chin Huang, Jone F. Chen, Shih Chang Tsai, et al.
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DOI: 10.1109/TED.2015.2391298
See this article

Intersublevel Photoabsorption and Photoelectric Processes in ZnO Quantum Dot Embedded in $\hbox{HfO}_{2}$ and AlN Matrices

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IEEE Photonics Journal 6 (5) 1 (2014)
DOI: 10.1109/JPHOT.2014.2317677
See this article

A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

Hyuk-Min Kwon, Sung-Kyu Kwon, Kwang-Seok Jeong, et al.
IEEE Transactions on Electron Devices 61 (8) 2619 (2014)
DOI: 10.1109/TED.2014.2326423
See this article

Biodegradable Junctionless Transistors With Extremely Simple Structure

Jie Guo, Jingquan Liu, Bin Yang, et al.
IEEE Electron Device Letters 36 (9) 908 (2015)
DOI: 10.1109/LED.2015.2451672
See this article

Realization of graphene field-effect transistor with high-κ HCa2Nb3O10 nanoflake as top-gate dielectric

Wenwu Li, Song-Lin Li, Katsuyoshi Komatsu, et al.
Applied Physics Letters 103 (2) 023113 (2013)
DOI: 10.1063/1.4813537
See this article

UV-Assisted Low Temperature Oxide Dielectric Films for TFT Applications

Jaeeun Hwang, Kyungmin Lee, Yesul Jeong, et al.
Advanced Materials Interfaces 1 (8) 1400206 (2014)
DOI: 10.1002/admi.201400206
See this article

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André Proessdorf, Michael Niehle, Frank Grosse, et al.
Journal of Applied Physics 119 (21) 215301 (2016)
DOI: 10.1063/1.4950875
See this article

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DOI: 10.1016/j.jallcom.2013.07.173
See this article

Growth stress induced tunability of dielectric permittivity in thin films

K. V. L. V. Narayanachari, Hareesh Chandrasekar, Amiya Banerjee, et al.
Journal of Applied Physics 119 (1) 014106 (2016)
DOI: 10.1063/1.4939466
See this article

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Boubacar Traore, Philippe Blaise, Benoit Sklenard, et al.
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DOI: 10.1109/TED.2017.2785352
See this article

Quantum dot field effect transistors

Frederik Hetsch, Ni Zhao, Stephen V. Kershaw and Andrey L. Rogach
Materials Today 16 (9) 312 (2013)
DOI: 10.1016/j.mattod.2013.08.011
See this article

Electron beam induced local crystallization of HfO2 nanopores for biosensing applications

Jiwook Shim, Jose A. Rivera and Rashid Bashir
Nanoscale 5 (22) 10887 (2013)
DOI: 10.1039/c3nr02608f
See this article

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C. Zhao, X. Wang and W. Wang
CMOS Past, Present and Future 69 (2018)
DOI: 10.1016/B978-0-08-102139-2.00004-5
See this article

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Applied Physics Letters 112 (18) 182103 (2018)
DOI: 10.1063/1.5027257
See this article

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A. K. Rumaiz, J. C. Woicik, C. Weiland, et al.
Applied Physics Letters 101 (22) 222110 (2012)
DOI: 10.1063/1.4768947
See this article

Electronic structure and charge transport in nonstoichiometric tantalum oxide

T V Perevalov, V A Gritsenko, A A Gismatulin, et al.
Nanotechnology 29 (26) 264001 (2018)
DOI: 10.1088/1361-6528/aaba4c
See this article

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DOI: 10.1038/s41598-018-20879-z
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Low-Voltage Organic Field-Effect Transistors (OFETs) with Solution-Processed Metal-Oxide as Gate Dielectric

Yaorong Su, Chengliang Wang, Weiguang Xie, et al.
ACS Applied Materials & Interfaces 3 (12) 4662 (2011)
DOI: 10.1021/am201078v
See this article

Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition

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Applied Physics Letters 103 (25) 253503 (2013)
DOI: 10.1063/1.4836955
See this article

Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors

Yuji Kiyota, Kenji Itaka, Yuta Iwashita, et al.
Japanese Journal of Applied Physics 50 (6S) 06GH12 (2011)
DOI: 10.7567/JJAP.50.06GH12
See this article

Effect of oxygen vacancies and strain on the phonon spectrum of HfO2 thin films

Lingyuan Gao, Eilam Yalon, Annabel R. Chew, et al.
Journal of Applied Physics 121 (22) 224101 (2017)
DOI: 10.1063/1.4984833
See this article

Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier

Diana Chien, Xiang Li, Kin Wong, et al.
Applied Physics Letters 108 (11) 112402 (2016)
DOI: 10.1063/1.4943023
See this article

Kinetic Monte Carlo of transport processes in Al/AlOx/Au-layers: Impact of defects

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AIP Advances 6 (9) 095112 (2016)
DOI: 10.1063/1.4963180
See this article

Direct imaging of sketched conductive nanostructures at the LaAlO3/SrTiO3 interface

Zhanzhi Jiang, Xiaoyu Wu, Hyungwoo Lee, et al.
Applied Physics Letters 111 (23) 233104 (2017)
DOI: 10.1063/1.5005917
See this article

A journey towards reliability improvement of TiO2 based Resistive Random Access Memory: A review

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Microelectronics Reliability 54 (3) 541 (2014)
DOI: 10.1016/j.microrel.2013.11.013
See this article

Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations

R. Thamankar, F. M. Puglisi, A. Ranjan, et al.
Journal of Applied Physics 122 (2) 024301 (2017)
DOI: 10.1063/1.4991002
See this article

Band offsets and electronic structures of interface between In0.5Ga0.5As and InP

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Journal of Applied Physics 119 (5) 055705 (2016)
DOI: 10.1063/1.4941029
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Current oscillations in Schottky-barrier CNTFET: towards resonant tunneling device operation

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Semiconductor Science and Technology 33 (3) 035012 (2018)
DOI: 10.1088/1361-6641/aaa912
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Localized defect states and charge trapping in atomic layer deposited-Al2O3 films

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DOI: 10.1116/1.4971991
See this article

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Wei Zhou, Xiaochuan Dai, Tian-Ming Fu, et al.
Nano Letters 140130095608009 (2014)
DOI: 10.1021/nl500070h
See this article

Annealing temperature modulated interfacial chemistry and electrical characteristics of sputtering-derived HfO 2 /Si gate stack

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Journal of Alloys and Compounds 647 322 (2015)
DOI: 10.1016/j.jallcom.2015.05.157
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Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 36 (4) 04G101 (2018)
DOI: 10.1116/1.5023591
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Materials 7 (3) 2301 (2014)
DOI: 10.3390/ma7032301
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PVDF–BaSrTiO3nanocomposites for flexible electrical energy storage devices

Shiva Adireddy, Venkata Sreenivas Puli, Samuel Charles Sklare, et al.
Emerging Materials Research 3 (6) 265 (2014)
DOI: 10.1680/emr.14.00013
See this article

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DOI: 10.1021/acsami.5b06485
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Chinese Physics B 24 (12) 127305 (2015)
DOI: 10.1088/1674-1056/24/12/127305
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Optics Express 26 (7) 8532 (2018)
DOI: 10.1364/OE.26.008532
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DOI: 10.1002/jcc.24272
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DOI: 10.1063/1.5026831
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MRS Communications 5 (04) 605 (2015)
DOI: 10.1557/mrc.2015.79
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DOI: 10.1116/1.3664756
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Applied Surface Science 369 377 (2016)
DOI: 10.1016/j.apsusc.2016.02.066
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DOI: 10.1007/s11664-014-3353-5
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DOI: 10.1007/s13204-012-0090-z
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DOI: 10.1007/s10854-010-0144-5
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DOI: 10.1002/elps.201400194
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DOI: 10.1016/j.tsf.2012.06.080
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DOI: 10.7567/JJAP.51.031101
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DOI: 10.1088/0268-1242/28/12/125011
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Chinese Physics B 22 (11) 117309 (2013)
DOI: 10.1088/1674-1056/22/11/117309
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physica status solidi (b) 248 (6) 1405 (2011)
DOI: 10.1002/pssb.201046519
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DOI: 10.1149/1.3095475
See this article

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DOI: 10.1149/1.2400728
See this article

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DOI: 10.1088/0953-8984/17/48/005
See this article

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DOI: 10.1051/epjap/2010159
See this article

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Electrochimica Acta 140 258 (2014)
DOI: 10.1016/j.electacta.2014.05.034
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DOI: 10.1063/1.3326516
See this article

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DOI: 10.1116/1.4793264
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DOI: 10.1007/s11051-011-0499-4
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DOI: 10.1134/S1063776111050037
See this article

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DOI: 10.1088/1674-4926/35/1/014002
See this article

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DOI: 10.1016/j.jallcom.2011.06.041
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DOI: 10.1016/j.microrel.2012.09.008
See this article

Application and electronic structure of high-permittivity dielectrics

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Uspekhi Fizicheskih Nauk 180 (6) 587 (2010)
DOI: 10.3367/UFNr.0180.201006b.0587
See this article

Ta2O5-based high-K dielectric thin films from solution processed at low temperatures

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Materials Research Bulletin 50 323 (2014)
DOI: 10.1016/j.materresbull.2013.11.025
See this article

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Valeri Ligatchev
physica status solidi (b) 251 (3) 569 (2014)
DOI: 10.1002/pssb.201349262
See this article

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Peter Broqvist and Alfredo Pasquarello
Microelectronic Engineering 84 (9-10) 2416 (2007)
DOI: 10.1016/j.mee.2007.04.013
See this article

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Journal of Alloys and Compounds 588 103 (2014)
DOI: 10.1016/j.jallcom.2013.11.008
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 25 (1) 271 (2007)
DOI: 10.1116/1.2404684
See this article

Casimir attractive-repulsive transition in MEMS

M. Boström, S.Å. Ellingsen, I. Brevik, et al.
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DOI: 10.1140/epjb/e2012-30794-5
See this article

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Japanese Journal of Applied Physics 48 (10) 101403 (2009)
DOI: 10.1143/JJAP.48.101403
See this article

Sm2O3 gate dielectric on Si substrate

Wen Chiao Chin, Kuan Yew Cheong and Zainuriah Hassan
Materials Science in Semiconductor Processing 13 (5-6) 303 (2010)
DOI: 10.1016/j.mssp.2011.02.001
See this article

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Gang Chen, Jerry Yu and P.T. Lai
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DOI: 10.1016/j.microrel.2012.03.022
See this article

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DOI: 10.1002/pssa.200982444
See this article

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J. L. Everaert, E. Rosseel, A. Pap, et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29 (1) 01AB05 (2011)
DOI: 10.1116/1.3521384
See this article

Insulator–metal transition of VO2ultrathin films on silicon: evidence for an electronic origin by infrared spectroscopy

W W Peng, G Niu, R Tétot, et al.
Journal of Physics: Condensed Matter 25 (44) 445402 (2013)
DOI: 10.1088/0953-8984/25/44/445402
See this article

BaTiO3Integration with Nanostructured Epitaxial (100), (110), and (111) Germanium for Multifunctional Devices

Mantu K. Hudait, Yan Zhu, Nikhil Jain, et al.
ACS Applied Materials & Interfaces 5 (21) 11446 (2013)
DOI: 10.1021/am4036866
See this article

Defect passivation in HfO2 gate oxide by fluorine

K. Tse and J. Robertson
Applied Physics Letters 89 (14) 142914 (2006)
DOI: 10.1063/1.2360190
See this article

Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors

Christophe Avis, Youn Goo Kim and Jin Jang
Journal of Materials Chemistry 22 (34) 17415 (2012)
DOI: 10.1039/c2jm33054g
See this article

Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction

A. Proessdorf, M. Niehle, M. Hanke, et al.
Applied Physics Letters 105 (2) 021601 (2014)
DOI: 10.1063/1.4890107
See this article

Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers

Chien-Wei Lee and Jenn-Gwo Hwu
AIP Advances 3 (10) 102123 (2013)
DOI: 10.1063/1.4826886
See this article

Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors

Bhola N. Pal, Bal Mukund Dhar, Kevin C. See and Howard E. Katz
Nature Materials 8 (11) 898 (2009)
DOI: 10.1038/nmat2560
See this article

ALD deposited ZrO2 ultrathin layers on Si and Ge substrates: A multiple technique characterization

M.A. Botzakaki, N. Xanthopoulos, E. Makarona, et al.
Microelectronic Engineering 112 208 (2013)
DOI: 10.1016/j.mee.2013.03.002
See this article

Development of hafnium based high-k materials—A review

J.H. Choi, Y. Mao and J.P. Chang
Materials Science and Engineering: R: Reports 72 (6) 97 (2011)
DOI: 10.1016/j.mser.2010.12.001
See this article

First-principles study of Zintl aluminide SrAl2

Alexander Slepko and Alexander A. Demkov
Physical Review B 85 (19) (2012)
DOI: 10.1103/PhysRevB.85.195462
See this article

Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction

M. Kuzmin, P. Laukkanen, M. Yasir, et al.
Physical Review B 92 (16) (2015)
DOI: 10.1103/PhysRevB.92.165311
See this article

Electro-optical modulation of a silicon waveguide with an “epsilon-near-zero” material

Alok P. Vasudev, Ju-Hyung Kang, Junghyun Park, Xiaoge Liu and Mark L. Brongersma
Optics Express 21 (22) 26387 (2013)
DOI: 10.1364/OE.21.026387
See this article

Defect states in the high-dielectric-constant gate oxide LaAlO3

K. Xiong, J. Robertson and S. J. Clark
Applied Physics Letters 89 (2) 022907 (2006)
DOI: 10.1063/1.2221521
See this article

Review on one-dimensional nanostructures prepared by electrospinning and atomic layer deposition

Imre Miklós Szilágyi and Dávidné Nagy
Journal of Physics: Conference Series 559 012010 (2014)
DOI: 10.1088/1742-6596/559/1/012010
See this article

Thin Films of High-kOxides and ZnO for Transparent Electronic Devices

Sylwia Gieraltowska, Lukasz Wachnicki, Bartlomiej S. Witkowski, Elzbieta Guziewicz and Marek Godlewski
Chemical Vapor Deposition 19 (4-6) 213 (2013)
DOI: 10.1002/cvde.201207029
See this article

Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application

Rajeswar Panja, Sourav Roy, Debanjan Jana and Siddheswar Maikap
Nanoscale Research Letters 9 (1) 692 (2014)
DOI: 10.1186/1556-276X-9-692
See this article

Electronic properties of the Zr–ZrO2–SiO2–Si(100) gate stack structure

C. C. Fulton, G. Lucovsky and R. J. Nemanich
Journal of Applied Physics 99 (6) 063708 (2006)
DOI: 10.1063/1.2181282
See this article

La2O3 Nano powders by mixture of fuels approach through chemical combustion for dielectric studies

G Nithesh Sharma, K Venkateswara Rao, V Sesha Sai Kumar, et al.
IOP Conference Series: Materials Science and Engineering 73 012099 (2015)
DOI: 10.1088/1757-899X/73/1/012099
See this article

Electrical and reliability characteristics of polycrystalline silicon thin-film transistors with high-κ Eu2O3 gate dielectrics

Li-Chen Yen, Chia-Wei Hu, Tsung-Yu Chiang, Tien-Sheng Chao and Tung-Ming Pan
Applied Physics Letters 100 (17) 173509 (2012)
DOI: 10.1063/1.4705472
See this article

Nanoscale investigations: Surface potential of rare-earth oxide (Re2O3) thin films by kelvin probe force microscopy for next generation CMOS technology

Pawan Kumar, Robin Khosla and Satinder K. Sharma
Surfaces and Interfaces 4 69 (2016)
DOI: 10.1016/j.surfin.2016.08.003
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Lattice dynamics and thermal properties of SrHfO3by first-principles calculations

Hidenobu Murata, Tomoyuki Yamamoto, Hiroki Moriwake and Isao Tanaka
physica status solidi (b) 246 (7) 1628 (2009)
DOI: 10.1002/pssb.200945041
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Ink-Jet-Printed Organic Thin-Film Transistors for Low-Voltage-Driven CMOS Circuits With Solution-Processed AlOX Gate Insulator

Sung Hoon Kim, Sun Hee Lee, Youn Goo Kim and Jin Jang
IEEE Electron Device Letters 34 (2) 307 (2013)
DOI: 10.1109/LED.2012.2228461
See this article

High dielectric material dependence of carbon nanotube field effect transistor considering non-ballistic conduction

Nirjhor Tahmidur Rouf, Ashfaqul Haq Deep, Mahmudul Hasan, et al.
Micro & Nano Letters 9 (10) 620 (2014)
DOI: 10.1049/mnl.2014.0268
See this article

Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers

V. V. Afanas’ev, A. Stesmans, G. Mavrou and A. Dimoulas
Applied Physics Letters 93 (10) 102115 (2008)
DOI: 10.1063/1.2972123
See this article

Phase transition in sputtered HfO2 thin films: A qualitative Raman study

G.S. Belo, F. Nakagomi, A. Minko, et al.
Applied Surface Science 261 727 (2012)
DOI: 10.1016/j.apsusc.2012.08.088
See this article

Junctionless Tunnel Field Effect Transistor with Nonuniform Doping

Yogesh Goswami, Pranav Asthana, Shibir Basak and Bahniman Ghosh
International Journal of Nanoscience 14 (03) 1450025 (2015)
DOI: 10.1142/S0219581X14500252
See this article

First-principles calculations of electronic and optical properties of Mn-doped cubic HfO2

Yu-Fen Zhang, Hao Ren, Zhi-Tao Hou, Cheng Wang and Shuai Zhao
Journal of Alloys and Compounds 609 107 (2014)
DOI: 10.1016/j.jallcom.2014.04.150
See this article

The initial atomic layer deposition of HfO2∕Si(001) as followed in situ by synchrotron radiation photoelectron spectroscopy

Massimo Tallarida, Konstantin Karavaev and Dieter Schmeisser
Journal of Applied Physics 104 (6) 064116 (2008)
DOI: 10.1063/1.2978362
See this article

From amorphous phase separations to nanostructured materials in sol–gel derived ZrO2:Eu3+/SiO2 and ZnO/SiO2 composites

A. Gaudon, F. Lallet, A. Boulle, et al.
Journal of Non-Crystalline Solids 352 (21-22) 2152 (2006)
DOI: 10.1016/j.jnoncrysol.2006.02.054
See this article

Electron spin resonance observation of an interfacial GePb1-type defect in SiO2/(100)Si1−xGex/SiO2/Si heterostructures

A Stesmans, P Somers and V V Afanas’ev
Journal of Physics: Condensed Matter 21 (12) 122201 (2009)
DOI: 10.1088/0953-8984/21/12/122201
See this article

Electronic structure of bulk and defect α- and γ-Al2O3

T.V. Perevalov, A.V. Shaposhnikov and V.A. Gritsenko
Microelectronic Engineering 86 (7-9) 1915 (2009)
DOI: 10.1016/j.mee.2009.03.006
See this article

Band alignment of atomic layer deposited (ZrO2)x(SiO2)1−x gate dielectrics on Si (100)

Dahlang Tahir, Eun Kyoung Lee, Suhk Kun Oh, et al.
Applied Physics Letters 94 (21) 212902 (2009)
DOI: 10.1063/1.3143223
See this article

Characterization of Semiconductor Heterostructures and Nanostructures

Andre Stesmans and Valery V. Afanas'ev
Characterization of Semiconductor Heterostructures and Nanostructures 435 (2008)
DOI: 10.1016/B978-0-444-53099-8.00013-0
See this article

Morphology and Composition of Selected High-k Materials and Their Relevance to Dielectric Properties of Thin Films

J. Dąbrowski, G. Lippert, L. Oberbeck, et al.
Journal of The Electrochemical Society 155 (5) G97 (2008)
DOI: 10.1149/1.2875741
See this article

Bilayer Organic–Inorganic Gate Dielectrics for High-Performance, Low-Voltage, Single-Walled Carbon Nanotube Thin-Film Transistors, Complementary Logic Gates, and p–n Diodes on Plastic Substrates

Q. Cao, M.-G. Xia, M. Shim and J. A. Rogers
Advanced Functional Materials 16 (18) 2355 (2006)
DOI: 10.1002/adfm.200600539
See this article

Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures

Srikant Jayanti, Xiangyu Yang, Daniel J. Lichtenwalner and Veena Misra
Applied Physics Letters 96 (9) 092905 (2010)
DOI: 10.1063/1.3355547
See this article

Thermal stability of thin ZrO2 films prepared by a sol-gel process on Si(001) substrates

H. Döscher, G. Lilienkamp, P. Iskra, M. Kazempoor and W. Daum
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28 (4) C5B5 (2010)
DOI: 10.1116/1.3425637
See this article

AmorphousHfO2andHf1−xSixOvia a melt-and-quench scheme usingab initiomolecular dynamics

Wanderlã L. Scopel, Antônio J. R. da Silva and A. Fazzio
Physical Review B 77 (17) 172101 (2008)
DOI: 10.1103/PhysRevB.77.172101
See this article

Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

Yung-Shao Shen, Kuen-Yi Chen, Po-Chun Chen, Teng-Chuan Chen and Yung-Hsien Wu
Scientific Reports 7 43659 (2017)
DOI: 10.1038/srep43659
See this article

Remote phonon scattering in field-effect transistors with a high κ insulating layer

B. Laikhtman and P. M. Solomon
Journal of Applied Physics 103 (1) 014501 (2008)
DOI: 10.1063/1.2826951
See this article

Floating Gate Memory with Biomineralized Nanodots Embedded in High-kGate Dielectric

Kosuke Ohara, Ichiro Yamashita, Toshitake Yaegashi, et al.
Applied Physics Express 2 (9) 095001 (2009)
DOI: 10.1143/APEX.2.095001
See this article

In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates

K. Devloo-Casier, J. Dendooven, K. F. Ludwig, et al.
Applied Physics Letters 98 (23) 231905 (2011)
DOI: 10.1063/1.3598433
See this article

Investigation of forming-gas annealed CeO2 thin film on GaN

Hock Jin Quah, Kuan Yew Cheong, Zainuriah Hassan and Zainovia Lockman
Journal of Materials Science: Materials in Electronics 22 (6) 583 (2011)
DOI: 10.1007/s10854-010-0181-0
See this article

Organic Optoelectronics

Chengliang Wang, Lang Jiang and Wenping Hu
Organic Optoelectronics 95 (2013)
DOI: 10.1002/9783527653454.ch3
See this article

Thickness dependence of the structural and dielectric properties of epitaxial ZrO2films grown by limited reaction sputtering

Y Zhou, K Sasaki, T Kawae and A Morimoto
Journal of Physics D: Applied Physics 42 (20) 205406 (2009)
DOI: 10.1088/0022-3727/42/20/205406
See this article

Electrical, Structural and Interfacial Characterization of HfO2Films on Si Substrates

Ting-Ting Tan, Zheng-Tang Liu and Yan-Yan Li
Chinese Physics Letters 28 (8) 086803 (2011)
DOI: 10.1088/0256-307X/28/8/086803
See this article

Hafnia-Silica Cryogels: Solvent-Assisted Textural and Catalytic Control in the Citronellal Cyclization

Ciril Jimeno, Jonathan Miras and Jordi Esquena
ChemCatChem 6 (9) 2626 (2014)
DOI: 10.1002/cctc.201402189
See this article

Low-Operating-Voltage Pentacene-Based Transistors and Inverters With Solution-Processed Barium Zirconate Titanate Insulators

Chia-Yu Wei, Wen-Chieh Huang, Chih-Kai Yang, Yen-Yu Chang and Yeong-Her Wang
IEEE Electron Device Letters 32 (12) 1755 (2011)
DOI: 10.1109/LED.2011.2167010
See this article

Study on a Metal–Insulator–Silicon Hydrogen Sensor With LaTiON as Gate Insulator

Jerry Yu, Gang Chen and Pui To Lai
IEEE Sensors Journal 13 (5) 1534 (2013)
DOI: 10.1109/JSEN.2012.2235065
See this article

A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs

Sofia Johansson, Martin Berg, Karl-Magnus Persson and Erik Lind
IEEE Transactions on Electron Devices 60 (2) 776 (2013)
DOI: 10.1109/TED.2012.2231867
See this article

High-mobility BaSnO3thin-film transistor with HfO2gate insulator

Young Mo Kim, Chulkwon Park, Useong Kim, Chanjong Ju and Kookrin Char
Applied Physics Express 9 (1) 011201 (2016)
DOI: 10.7567/APEX.9.011201
See this article

Organic Macromolecular High Dielectric Constant Materials: Synthesis, Characterization, and Applications

Meng Guo, Teruaki Hayakawa, Masa-aki Kakimoto and Theodore Goodson
The Journal of Physical Chemistry B 115 (46) 13419 (2011)
DOI: 10.1021/jp205428j
See this article

Electrochemical and passive characterization of a beta type Ti45Zr38Al17 cast rod in nitric acid medium

J. Jayaraj, A. Ravi Shankar and U. Kamachi Mudali
Electrochimica Acta 85 210 (2012)
DOI: 10.1016/j.electacta.2012.08.047
See this article

Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness

Minhyeok Choe, Gunho Jo, Jongsun Maeng, et al.
Journal of Applied Physics 107 (3) 034504 (2010)
DOI: 10.1063/1.3298910
See this article

Hard X-ray Photoelectron Spectroscopy (HAXPES)

Conan Weiland, Abdul K. Rumaiz and Joseph C. Woicik
Springer Series in Surface Sciences, Hard X-ray Photoelectron Spectroscopy (HAXPES) 59 381 (2016)
DOI: 10.1007/978-3-319-24043-5_15
See this article

Investigations on high-κ dielectrics for low threshold voltage and low leakage zinc oxide thin-film transistor, using material selection methodologies

Kavindra Kandpal and Navneet Gupta
Journal of Materials Science: Materials in Electronics 27 (6) 5972 (2016)
DOI: 10.1007/s10854-016-4519-0
See this article

Preparation and properties of BaTiO3/porous oxide composites

V. V. Sydorchuk, S. V. Khalameida, V. P. Klimenko, V. A. Mikheev and V. A. Zazhigalov
Inorganic Materials 48 (9) 925 (2012)
DOI: 10.1134/S0020168512090142
See this article

Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications

Yogesh Goswami, Pranav Asthana and Bahniman Ghosh
Journal of Semiconductors 38 (5) 054002 (2017)
DOI: 10.1088/1674-4926/38/5/054002
See this article

Field-effect induced tunability in hyperbolic metamaterials

Georgia T. Papadakis and Harry A. Atwater
Physical Review B 92 (18) (2015)
DOI: 10.1103/PhysRevB.92.184101
See this article

Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

Dominik Martin, Johannes Müller, Tony Schenk, et al.
Advanced Materials 26 (48) 8198 (2014)
DOI: 10.1002/adma.201403115
See this article

Method for disclosing invisible physical properties in metal−ferroelectric−insulator−semiconductor gate stacks

Shigeki Sakai, Wei Zhang and Mitsue Takahashi
Journal of Physics D: Applied Physics 50 (16) 165107 (2017)
DOI: 10.1088/1361-6463/aa622f
See this article

Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

Wei-En Fu, Chia-Wei Chang, Yong-Qing Chang, Chih-Kai Yao and Jiunn-Der Liao
Applied Surface Science 258 (22) 8974 (2012)
DOI: 10.1016/j.apsusc.2012.05.131
See this article

Trap-assisted tunneling, capacitance–voltage characteristics, and surface properties of Sm2O3 thin film on Si substrate

Kian Heng Goh, A. S. M. A. Haseeb and Yew Hoong Wong
Journal of Materials Science: Materials in Electronics 28 (6) 4725 (2017)
DOI: 10.1007/s10854-016-6115-8
See this article

Quantum-confined nanowires as vehicles for enhanced electrical transport

S Noor Mohammad
Nanotechnology 23 (28) 285707 (2012)
DOI: 10.1088/0957-4484/23/28/285707
See this article

Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack

Mengmeng YANG, Hailing TU, Jun DU, et al.
Journal of Rare Earths 31 (4) 395 (2013)
DOI: 10.1016/S1002-0721(12)60293-2
See this article

Atomic structure and thermally induced transformation of the crystalline BaO/Si(100) junction

M. Kuzmin, P. Laukkanen, M. P. J. Punkkinen, et al.
Physical Review B 90 (23) (2014)
DOI: 10.1103/PhysRevB.90.235405
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Energy band alignment at the nanoscale

Jonas Deuermeier, Elvira Fortunato, Rodrigo Martins and Andreas Klein
Applied Physics Letters 110 (5) 051603 (2017)
DOI: 10.1063/1.4975644
See this article

Model approach to solving the inverse problem of X-ray reflectometry and its application to the study of the internal structure of hafnium oxide films

Yu. O. Volkov, I. V. Kozhevnikov, B. S. Roshchin, E. O. Filatova and V. E. Asadchikov
Crystallography Reports 58 (1) 160 (2013)
DOI: 10.1134/S1063774513010148
See this article

A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices

Niladri Pratap Maity, Reshmi Maity, R.K. Thapa and Srimanta Baishya
Superlattices and Microstructures 95 24 (2016)
DOI: 10.1016/j.spmi.2016.04.032
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Structural and optical characterization of Cr2O3 nanostructures: Evaluation of its dielectric properties

M. M. Abdullah, Fahd M. Rajab and Saleh M. Al-Abbas
AIP Advances 4 (2) 027121 (2014)
DOI: 10.1063/1.4867012
See this article

Floating Gate Memory With Biomineralized Nanodots Embedded in $\hbox{HfO}_{2}$

Kosuke Ohara, Yosuke Tojo, Ichiro Yamashita, et al.
IEEE Transactions on Nanotechnology 10 (3) 576 (2011)
DOI: 10.1109/TNANO.2010.2053852
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Enhanced Capacitance of Composite Anodic ZrO2Films Comprising High Permittivity Oxide Nanocrystals and Highly Resistive Amorphous Oxide Matrix

Hiroki Habazaki, Shun Koyama, Yoshitaka Aoki, Norihito Sakaguchi and Shinji Nagata
ACS Applied Materials & Interfaces 3 (7) 2665 (2011)
DOI: 10.1021/am200460c
See this article

Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon

Yi Zhao, Masahiro Toyama, Koji Kita, Kentaro Kyuno and Akira Toriumi
Applied Physics Letters 88 (7) 072904 (2006)
DOI: 10.1063/1.2174840
See this article

Platinum-assisted post deposition annealing of the n-Ge/Y2O3interface

C Zimmermann, O Bethge, B Lutzer and E Bertagnolli
Semiconductor Science and Technology 31 (7) 075009 (2016)
DOI: 10.1088/0268-1242/31/7/075009
See this article

HfO[sub 2]∕Si interface formation in atomic layer deposition films: An in situ investigation

Massimo Tallarida, Konstantin Karavaev and Dieter Schmeisser
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27 (1) 300 (2009)
DOI: 10.1116/1.3021023
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Study of Si kinetics in interfacial SiO2scavenging in HfO2gate stacks

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura and Akira Toriumi
Applied Physics Express 8 (6) 061304 (2015)
DOI: 10.7567/APEX.8.061304
See this article

An integrated high temperature environmental cell for atom probe tomography studies of gas-surface reactions: Instrumentation and results

S. Dumpala, S.R. Broderick, P.A.J. Bagot and K. Rajan
Ultramicroscopy 141 16 (2014)
DOI: 10.1016/j.ultramic.2014.03.002
See this article

Designing graphene absorption in a multispectral plasmon-enhanced infrared detector

Michael D. Goldflam, Zhe Fei, Isaac Ruiz, et al.
Optics Express 25 (11) 12400 (2017)
DOI: 10.1364/OE.25.012400
See this article

High-k Gate Dielectrics for CMOS Technology

Shijie Wang, Yuanping Feng and Alfred C. H. Huan
High-k Gate Dielectrics for CMOS Technology 293 (2012)
DOI: 10.1002/9783527646340.ch9
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Physical and electrical characterization of atomic-layer-deposited Ru nanocrystals embedded into Al2O3 for memory applications

Min Zhang, Wei Chen, Shi-Jin Ding, et al.
Journal of Physics D: Applied Physics 41 (3) 032007 (2008)
DOI: 10.1088/0022-3727/41/3/032007
See this article

Chemical Bonding States of Plasma Nitrided High-k/Ge Gate Stack

C. Mahata, T. Das, S. Mallik, M. K. Hota and C. K. Maiti
Electrochemical and Solid-State Letters 14 (4) H167 (2011)
DOI: 10.1149/1.3545937
See this article

Reliability of La-Doped Hf-Based Dielectrics nMOSFETs

Chang Yong Kang, P.D. Kirsch, Byoung Hun Lee, Hsing-Huang Tseng and R. Jammy
IEEE Transactions on Device and Materials Reliability 9 (2) 171 (2009)
DOI: 10.1109/TDMR.2009.2020741
See this article

Probing defects at interfaces and interlayers of low-dimensional Si/insulator (HfO2; LaAlO3) structures by electron spin resonance

A. Stesmans and V.V. Afanas’ev
Physica B: Condensed Matter 401-402 550 (2007)
DOI: 10.1016/j.physb.2007.09.019
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Nonvolatile Metal–Oxide–Semiconductor Capacitors with Ru-RuO x Composite Nanodots Embedded in Atomic-Layer-Deposited Al2O3 Films

Hong-Yan Gou, Shi-Jin Ding, Yue Huang, et al.
Journal of Electronic Materials 39 (8) 1343 (2010)
DOI: 10.1007/s11664-010-1245-x
See this article

Internal Photoemission Spectroscopy

Valery V. Afanas’ev
Internal Photoemission Spectroscopy 255 (2014)
DOI: 10.1016/B978-0-08-099929-6.00007-5
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Determining the Optimized Layer-by-Layer Film Architecture With Dendrimer/Carbon Nanotubes for Field-Effect Sensors

Marcos A. M. Sousa, Jose R. Siqueira, Andres Vercik, Michael J Schoning and Osvaldo N. Oliveira
IEEE Sensors Journal 17 (6) 1735 (2017)
DOI: 10.1109/JSEN.2017.2653238
See this article

LCAO Calculations of (001) Surface Oxygen Vacancy Structure in Y-Doped BaZrO3

A. V. Bandura, R. A. Evarestov and D. D. Kuruch
Integrated Ferroelectrics 123 (1) 1 (2011)
DOI: 10.1080/10584587.2011.570582
See this article

Atomic and electronic structure of gadolinium oxide

Timofey Viktorovich Perevalov, Andrey Evgenievich Dolbak, Vasilii Aleksandrovich Shvets, et al.
The European Physical Journal Applied Physics 65 (1) 10702 (2014)
DOI: 10.1051/epjap/2013130239
See this article

Simulation of Graphene Base Transistors With Bilayer Tunnel Oxide Barrier: Model Calibration and Performance Projection

Valerio Di Lecce, Antonio Gnudi, Elena Gnani, Susanna Reggiani and Giorgio Baccarani
IEEE Electron Device Letters 37 (11) 1489 (2016)
DOI: 10.1109/LED.2016.2606391
See this article

Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- application

A. Fissel, M. Czernohorsky and H.J. Osten
Superlattices and Microstructures 40 (4-6) 551 (2006)
DOI: 10.1016/j.spmi.2006.07.002
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Superiority of DFT+U with non-linear core correction for open-shell binary rare-earth metal oxides: a case study of native point defects in cerium oxides

Bolong Huang
Philosophical Magazine 94 (26) 3052 (2014)
DOI: 10.1080/14786435.2014.933908
See this article

Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties

Shankar Swaminathan, Yun Sun, Piero Pianetta and Paul C. McIntyre
Journal of Applied Physics 110 (9) 094105 (2011)
DOI: 10.1063/1.3647761
See this article

Characterization of Semiconductor Heterostructures and Nanostructures

Andre Stesmans and Valery V. Afanas’ev
Characterization of Semiconductor Heterostructures and Nanostructures 685 (2013)
DOI: 10.1016/B978-0-444-59551-5.00016-9
See this article

Band Alignment at Molybdenum Disulphide/Boron Nitride/Aluminum Oxide Interfaces

Jennifer DiStefano, Yu-Chuan Lin, Joshua Robinson, et al.
Journal of Electronic Materials 45 (2) 983 (2016)
DOI: 10.1007/s11664-015-4255-x
See this article

Electronic structure and defects of high dielectric constant gate oxide La2Hf2O7

D. Liu, K. Tse and J. Robertson
Applied Physics Letters 90 (6) 062901 (2007)
DOI: 10.1063/1.2433031
See this article

Fabrication of precision integrated capacitors

Jisu Jiang and Paul A. Kohl
Thin Solid Films 634 15 (2017)
DOI: 10.1016/j.tsf.2017.05.017
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Cathodo- and photoluminescence increase in amorphous hafnium oxide under annealing in oxygen

E. V. Ivanova, M. V. Zamoryanskaya, V. A. Pustovarov, et al.
Journal of Experimental and Theoretical Physics 120 (4) 710 (2015)
DOI: 10.1134/S1063776115020132
See this article

Interface models and processing technologies for surface passivation and interface control in III–V semiconductor nanoelectronics

H. Hasegawa and M. Akazawa
Applied Surface Science 254 (24) 8005 (2008)
DOI: 10.1016/j.apsusc.2008.03.051
See this article

Optimizing the internal electric field distribution of alternating current driven organic light-emitting devices for a reduced operating voltage

Markus Fröbel, Simone Hofmann, Karl Leo and Malte C. Gather
Applied Physics Letters 104 (7) 071105 (2014)
DOI: 10.1063/1.4865928
See this article

Effects of oxygen deficiency in the sol–gel ZrOxfilm on the electrical properties of Au/ZrOx/n-type Si/In devices

Wei-Chung Chen, Yow-Jon Lin, Ya-Hui Chen and Hsing-Cheng Chang
Semiconductor Science and Technology 25 (5) 055003 (2010)
DOI: 10.1088/0268-1242/25/5/055003
See this article

Chemistry of surface nanostructures in lead precursor-rich PbZr0.52Ti0.48O3 sol–gel films

I. Gueye, G. Le Rhun, P. Gergaud, et al.
Applied Surface Science 363 21 (2016)
DOI: 10.1016/j.apsusc.2015.11.118
See this article

Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN

Rathnait D. Long, Aryan Hazeghi, Marika Gunji, Yoshio Nishi and Paul C. McIntyre
Applied Physics Letters 101 (24) 241606 (2012)
DOI: 10.1063/1.4769827
See this article

Integration of Amorphous $\hbox{Yb}_{2}\hbox{O}_{3}$ and Crystalline $\hbox{ZrTiO}_{4}$ as Gate Stack for Aggressively Scaled MOS Devices

Yung-Hsien Wu, Rong-Jhe Lyu, Min-Lin Wu, Lun-Lun Chen and Chia-Chun Lin
IEEE Electron Device Letters 33 (3) 426 (2012)
DOI: 10.1109/LED.2011.2179112
See this article

Synthesis of germanium nanocrystals in hafnium aluminum oxide matrix

F. Zheng, H. G. Chew, W. K. Choi, J. X. Zhang and H. L. Seng
Journal of Applied Physics 101 (11) 114310 (2007)
DOI: 10.1063/1.2738385
See this article

High-k Gate Dielectrics for CMOS Technology

Hong-Liang Lu and David Wei Zhang
High-k Gate Dielectrics for CMOS Technology 31 (2012)
DOI: 10.1002/9783527646340.ch2
See this article

Solar water oxidation in sputter-deposited nanocrystalline WO3 photoanodes via tuning of Ar:O2 flow rate combinations

Siao Li Liew, Wei Wang, Surani Bin Dolmanan, Glen Tai Wei Goh and Dongzhi Chi
Materials Chemistry and Physics 143 (3) 1171 (2014)
DOI: 10.1016/j.matchemphys.2013.11.018
See this article

Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices

Ashwath Rao, Priyanka Chaurasia and B. R. Singh
Radiation Effects and Defects in Solids 171 (3-4) 187 (2016)
DOI: 10.1080/10420150.2016.1160904
See this article

Electrode effects on the conduction mechanisms in HfO2-based metal-insulator-metal capacitors

F. El Kamel, P. Gonon, C. Vallée and C. Jorel
Journal of Applied Physics 106 (6) 064508 (2009)
DOI: 10.1063/1.3226857
See this article

Atomic layer deposition of HfO2 thin films using H2O2 as oxidant

Min-Jung Choi, Hyung-Ho Park, Doo Seok Jeong, et al.
Applied Surface Science 301 451 (2014)
DOI: 10.1016/j.apsusc.2014.02.098
See this article

Activation of hole charge carriers and generation of electromotive force in gabbro blocks subjected to nonuniform loading

Akihiro Takeuchi and Toshiyasu Nagao
Journal of Geophysical Research: Solid Earth 118 (3) 915 (2013)
DOI: 10.1002/jgrb.50111
See this article

Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

Jia Sun, Jie Jiang, Aixia Lu, Bin Zhou and Qing Wan
IEEE Transactions on Electron Devices 58 (3) 764 (2011)
DOI: 10.1109/TED.2010.2101604
See this article

Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths

Sheikh Ahmed, Sharif Mominuzzaman, Md. Iramul Chowdhury and Mashiyat Shawkat
Micro & Nano Letters 10 (10) 523 (2015)
DOI: 10.1049/mnl.2015.0193
See this article

Improving dielectric performance in anodic aluminum oxide via detection and passivation of defect states

M. Mibus, C. Jensen, X. Hu, et al.
Applied Physics Letters 104 (24) 244103 (2014)
DOI: 10.1063/1.4882656
See this article

Interface engineering for high performance graphene electronic devices

Dae Jung, Sang Yang, Hamin Park, et al.
Nano Convergence 2 (1) 11 (2015)
DOI: 10.1186/s40580-015-0042-x
See this article

Gate-Stack Engineering in $n$-Type Ultrascaled Si Nanowire Field-Effect Transistors

Mathieu Luisier and Olaf Schenk
IEEE Transactions on Electron Devices 60 (10) 3325 (2013)
DOI: 10.1109/TED.2013.2278573
See this article

Atomic layer deposited zirconium oxide electron injection layer for efficient organic light emitting diodes

Maria Vasilopoulou, Stella Kennou, Spyridon Ladas, et al.
Organic Electronics 14 (1) 312 (2013)
DOI: 10.1016/j.orgel.2012.10.006
See this article

Structural and Electronic Properties of GaN (0001)/α-Al2O3(0001) Interface

M. B. Pereira, E. M. Diniz and S. Guerini
Advances in Condensed Matter Physics 2015 1 (2015)
DOI: 10.1155/2015/469487
See this article

Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150 °C

Xiaoli Xu, Qingyu Cui, Yizheng Jin and Xiaojun Guo
Applied Physics Letters 101 (22) 222114 (2012)
DOI: 10.1063/1.4769091
See this article

Optical properties and thermal stability of LaYbO3 ternary oxide for high-k dielectric application

Wei-tao Su, Li Yang and Bin Li
Applied Surface Science 257 (7) 2526 (2011)
DOI: 10.1016/j.apsusc.2010.10.016
See this article

High-k dielectric Al2O3 nanowire and nanoplate field effect sensors for improved pH sensing

Bobby Reddy, Brian R. Dorvel, Jonghyun Go, et al.
Biomedical Microdevices 13 (2) 335 (2011)
DOI: 10.1007/s10544-010-9497-z
See this article

Electronic defects in LaAlO3

K. Xiong, J. Robertson and S.J. Clark
Microelectronic Engineering 85 (1) 65 (2008)
DOI: 10.1016/j.mee.2007.01.181
See this article

Analysis of Off-State Leakage Current Characteristics and Mechanisms of Nanoscale MOSFETs with a High-kGate Dielectric

Hong-Xia Liu and Fei Ma
Chinese Physics Letters 29 (12) 127301 (2012)
DOI: 10.1088/0256-307X/29/12/127301
See this article

Reactively sputtered hafnium oxide on silicon dioxide: Structural and electrical properties

Vl. Kolkovsky, K. Lukat, E. Kurth and C. Kunath
Solid-State Electronics 106 63 (2015)
DOI: 10.1016/j.sse.2015.01.004
See this article

White light emission from alternating current organic light-emitting devices using high frequency color-mixing

Markus Fröbel, Ajay Perumal, Tobias Schwab, et al.
physica status solidi (a) 210 (11) 2439 (2013)
DOI: 10.1002/pssa.201330097
See this article

Optical susceptibilities in singly charged ZnO colloidal quantum dots embedded in different dielectric matrices

Zaiping Zeng, Emmanuel Paspalakis, Christos S. Garoufalis, Andreas F. Terzis and Sotirios Baskoutas
Journal of Applied Physics 113 (5) 054303 (2013)
DOI: 10.1063/1.4789363
See this article

In-Situ Studies of ALD Growth of Hafnium Oxide Films

Konstantin Karavaev, Krzysztof Kolanek, Massimo Tallarida, Dieter Schmeißer and Ehrenfried Zschech
Advanced Engineering Materials 11 (4) 265 (2009)
DOI: 10.1002/adem.200800348
See this article

Temperature dependence of electrical transport properties of La4BaCu5−xCoxO13+δconducting oxide thin films

Akihiro Tsuruta, Yusuke Tsujioka, Yutaka Yoshida, et al.
Japanese Journal of Applied Physics 55 (4S) 04EJ08 (2016)
DOI: 10.7567/JJAP.55.04EJ08
See this article

Misfit point defects at the epitaxial Lu2O3/(111)Si interface revealed by electron spin resonance

A. Stesmans, P. Somers, V. V. Afanas’ev, et al.
Applied Physics Letters 93 (10) 103505 (2008)
DOI: 10.1063/1.2974793
See this article

Local Dielectric Property of Cubic, Tetragonal, and Monoclinic Hafnium Oxides

Masato Senami, Yasushi Tsuchida, Akinori Fukushima, Yuji Ikeda and Akitomo Tachibana
Japanese Journal of Applied Physics 51 031101 (2012)
DOI: 10.1143/JJAP.51.031101
See this article

Stress and Phase Engineered ZrO2/Ge for High-k Dielectric Applications

Narayan K. V. L.V. Achari, Amiya Banerjee and Srinivasan Raghavan
MRS Proceedings 1746 (2015)
DOI: 10.1557/opl.2015.392
See this article

Negative differential resistance in ultrathin Ge-on-insulator FETs

D Kazazis, A Zaslavsky, E Tutuc, N A Bojarczuk and S Guha
Semiconductor Science and Technology 22 (1) S1 (2007)
DOI: 10.1088/0268-1242/22/1/S01
See this article

A study of the structure of (HfO2) x (Al2O3)1−x /Si films by X-ray photoelectron spectroscopy

V. V. Kaichev, Yu. V. Dubinin, T. P. Smirnova and M. S. Lebedev
Journal of Structural Chemistry 52 (3) 480 (2011)
DOI: 10.1134/S002247661103005X
See this article

Mechanical properties of ultra-thin HfO2 films studied by nano scratches tests

Wei-En Fu, Yong-Qing Chang, Chia-Wei Chang, Chih-Kai Yao and Jiunn-Der Liao
Thin Solid Films 529 402 (2013)
DOI: 10.1016/j.tsf.2012.05.053
See this article

Model based precise analysis of the injection currents in Al/ZrO2/Al2O3/ZrO2/SiO2/Si structures for use in charge trapping non-volatile memory devices

N. Novkovski, A. Paskaleva, A. Skeparovski and D. Spassov
Materials Science in Semiconductor Processing 44 30 (2016)
DOI: 10.1016/j.mssp.2015.12.029
See this article

In situ characterization of initial growth of HfO2

L. Wang, Paul K. Chu, K. Xue and J. B. Xu
Applied Physics Letters 94 (3) 032904 (2009)
DOI: 10.1063/1.3073863
See this article

Oxygen vacancy estimation of high k metal gate using thermal dynamic model

H. L. Chang and M. S. Liang
Applied Physics Letters 97 (4) 041912 (2010)
DOI: 10.1063/1.3473772
See this article

Electronic structure of α-Al2O3: Ab initio simulations and comparison with experiment

T. V. Perevalov, A. V. Shaposhnikov, V. A. Gritsenko, et al.
JETP Letters 85 (3) 165 (2007)
DOI: 10.1134/S0021364007030071
See this article

Gate leakage current partitioning in nanoscale double gate MOSFETs, using compact analytical model

Ghader Darbandy, François Lime, Antonio Cerdeira, et al.
Solid-State Electronics 75 22 (2012)
DOI: 10.1016/j.sse.2012.05.006
See this article

X-ray reflection spectroscopy of the HfO2/SiO2/Si system in the region of the O–K absorption edge

E.O. Filatova, P. Jonnard and J.-M. André
Thin Solid Films 500 (1-2) 219 (2006)
DOI: 10.1016/j.tsf.2005.11.008
See this article

Compositional, structural and electronic characteristics of HfO2 and HfSiO dielectrics prepared by radio frequency magnetron sputtering

Li-ping Feng, Zheng-tang Liu and Ya-ming Shen
Vacuum 83 (5) 902 (2009)
DOI: 10.1016/j.vacuum.2008.08.004
See this article

Formation of hybrid hafnium oxide by applying sacrifacial silicon film

Chiung-Wei Lin, Bo-Shen Zheng and Jing-Wei Huang
Japanese Journal of Applied Physics 55 (1S) 01AA10 (2016)
DOI: 10.7567/JJAP.55.01AA10
See this article

Enhanced thermoelectric performance through carrier scattering at spherical nanoparticles in Bi 0.5 Sb 1.5 Te 3 /Ta 2 O 5 composites

Eun Bin Kim, Peyala Dharmaiah, Dongwon Shin, Kap-Ho Lee and Soon-Jik Hong
Journal of Alloys and Compounds 703 614 (2017)
DOI: 10.1016/j.jallcom.2017.01.340
See this article

Influence of post deposition annealing on Y2O3-gated GaAs MOS capacitors and their reliability issues

P.S. Das and A. Biswas
Microelectronic Engineering 88 (3) 282 (2011)
DOI: 10.1016/j.mee.2010.11.022
See this article

Band offsets of high K gate oxides on high mobility semiconductors

J. Robertson and B. Falabretti
Materials Science and Engineering: B 135 (3) 267 (2006)
DOI: 10.1016/j.mseb.2006.08.017
See this article

Dielectric and insulating properties of SrTiO3/Si heterostructure controlled by cation concentration

Fang Yang, ZhenZhong Yang, WenTao Li, et al.
Science China Physics, Mechanics and Astronomy 56 (12) 2404 (2013)
DOI: 10.1007/s11433-013-5344-6
See this article

Growth and dielectric properties of tetragonal ZrO2films by limited reaction sputtering

Y Zhou, N Kojima and K Sasaki
Journal of Physics D: Applied Physics 41 (17) 175414 (2008)
DOI: 10.1088/0022-3727/41/17/175414
See this article

Tailoring resistive switching properties of TiO2with controlled incorporation of oxide nanoparticles

Alejandro Cristians Rios, Lorena Aarão-Rodrigues, Alisson Ronieri Cadore, et al.
Materials Research Express 3 (8) 085024 (2016)
DOI: 10.1088/2053-1591/3/8/085024
See this article

Charge Trapping and Decay Mechanism in Post Deposition Annealed Er2O3 MOS Capacitors by Nanoscopic and Macroscopic Characterization

Robin Khosla, Pawan Kumar and Satinder K. Sharma
IEEE Transactions on Device and Materials Reliability 15 (4) 610 (2015)
DOI: 10.1109/TDMR.2015.2498310
See this article

Dielectrics in Electric Fields, Second Edition

Dielectrics in Electric Fields, Second Edition 289 (2016)
DOI: 10.1201/b20223-8
See this article

Nonvolatile memory capacitors based on Al2O3 tunneling and HfO2 blocking layers with charge storage in atomic-layer-deposited Pt nanocrystals

Xiao-Jie Liu, Lin Zhu, Mo-Yun Gao, et al.
Applied Surface Science 289 332 (2014)
DOI: 10.1016/j.apsusc.2013.10.160
See this article

New Precursors for the CVD of Zirconium and Hafnium Oxide Films

J.-S. M. Lehn, S. Javed and D. M. Hoffman
Chemical Vapor Deposition 12 (5) 280 (2006)
DOI: 10.1002/cvde.200506434
See this article

Leakage current in high dielectric oxides: Role of defect-induced energies

P. Maleeswaran, D. Nagulapally, R. P. Joshi and A. K. Pradhan
Journal of Applied Physics 113 (18) 184504 (2013)
DOI: 10.1063/1.4804134
See this article

Electroluminescence from light-emitting devices with erbium-doped TiO2 films: Enhancement effect of yttrium codoping

Miaomiao Jiang, Chen Zhu, Junwei Zhou, et al.
Journal of Applied Physics 120 (16) 163104 (2016)
DOI: 10.1063/1.4966224
See this article

Influence of Co-sputtered HfO2-Si Gate Dielectric in IZO-based thin Film Transistors

Dong Kyu Cho and Moonsuk Yi
Journal of the Institute of Electronics Engineers of Korea 50 (2) 98 (2013)
DOI: 10.5573/ieek.2013.50.2.098
See this article

Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3

V.V. Afanas’ev, S. Shamuilia, M. Badylevich, et al.
Microelectronic Engineering 84 (9-10) 2278 (2007)
DOI: 10.1016/j.mee.2007.04.113
See this article

Structural and Electronic Properties of Oxygen Vacancies in Monoclinic HfO2

Peter Broqvist and Alfredo Pasquarello
MRS Proceedings 996 0996-H01-08 (2007)
DOI: 10.1557/PROC-0996-H01-08
See this article

Formation of W/HfO2/Si gate structures using in situ magnetron sputtering and rapid thermal annealing

E. A. Bogoyavlenskaya, V. I. Rudakov, Yu. I. Denisenko, V. V. Naumov and A. E. Rogozhin
Technical Physics 59 (5) 711 (2014)
DOI: 10.1134/S1063784214050065
See this article

Ab initio modeling of electronic and optical properties of hafnium silicates

Li-Ping Feng, Zheng-Tang Liu and Bing Xu
Computational Materials Science 44 (3) 929 (2009)
DOI: 10.1016/j.commatsci.2008.06.025
See this article

UV-protection and photocatalytic properties of electrospun polyacrylonitrile nanofibrous mats coated with TiO2 nanofilm via sol–gel

Saeed Dadvar, Hossein Tavanai, Hamid Dadvar, Mohammad Morshed and Farhad E. Ghodsi
Journal of Sol-Gel Science and Technology 59 (2) 269 (2011)
DOI: 10.1007/s10971-011-2495-7
See this article

Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition

B. Dlubak, P. R. Kidambi, R. S. Weatherup, S. Hofmann and J. Robertson
Applied Physics Letters 100 (17) 173113 (2012)
DOI: 10.1063/1.4707376
See this article

Crystallinity of Supercooled Oxide Melts Quantified by Electrical Capacitance Measurements

Yusuke Harada, Noritaka Saito and Kunihiko Nakashima
ISIJ International 57 (1) 23 (2017)
DOI: 10.2355/isijinternational.ISIJINT-2016-299
See this article

Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods

K Mishima, H Murakami, A Ohta, et al.
Journal of Physics: Conference Series 417 012013 (2013)
DOI: 10.1088/1742-6596/417/1/012013
See this article

Direct tunneling gate current model for symmetric double gate junctionless transistor with SiO2/high-kgate stacked dielectric

S. Intekhab Amin and R. K. Sarin
Journal of Semiconductors 37 (3) 034001 (2016)
DOI: 10.1088/1674-4926/37/3/034001
See this article

Effects of successive additions of two capping ligands on the structural properties of PbO nanoparticles

Uzma K. H. Bangi, Wooje Han, Byungwook Yoo and Hyung-Ho Park
Journal of Nanoparticle Research 15 (11) (2013)
DOI: 10.1007/s11051-013-2070-y
See this article

Changes in Electronic Structure of La[sub x]Al[sub y]O Films as a Function of Postdeposition Annealing Temperature

J. W. Ma, W. J. Lee, M.-H. Cho, et al.
Journal of The Electrochemical Society 158 (3) G79 (2011)
DOI: 10.1149/1.3536503
See this article

Change in crystalline structure and band alignment in atomic-layer-deposited HfO2on InP using an annealing treatment

Yu-Seon Kang, Dae-Kyoung Kim, Mann-Ho Cho, et al.
physica status solidi (a) 210 (8) 1612 (2013)
DOI: 10.1002/pssa.201228628
See this article

Hydrogen shuttling near Hf-defect complexes in Si∕SiO2∕HfO2 structures

A. G. Marinopoulos, I. Batyrev, X. J. Zhou, et al.
Applied Physics Letters 91 (23) 233503 (2007)
DOI: 10.1063/1.2820380
See this article

Electrochemical and surface analyses of nanostructured Ti–24Nb–4Zr–8Sn alloys in simulated body solution

J. Li, S.J. Li, Y.L. Hao, et al.
Acta Biomaterialia 10 (6) 2866 (2014)
DOI: 10.1016/j.actbio.2014.02.032
See this article

Effect of Low Power Deposition and Low Oxidation Temperature on the Interfacial and Structural Properties of sputtered HfO2 Gate Dielectrics

Auxence Minko, Gustavo S. Belo, Sergei Rudenja and Douglas A. Buchanan
MRS Proceedings 1394 mrsf11-1394-m04-10 (2012)
DOI: 10.1557/opl.2012.802
See this article

The influence of Coulomb centers located in HfO[sub 2]/SiO[sub 2] gate stacks on the effective electron mobility

Sylvain Barraud, Olivier Bonno and Mikaël Cassé
Journal of Applied Physics 104 (7) 073725 (2008)
DOI: 10.1063/1.2968217
See this article

Studies of the structural, electronic and dielectric properties of Ca1−xSrxTiO3

HaiChuan Chen, JianPing Long, Lijun Yang, XueSong Wei and KaMa Huang
Physica B: Condensed Matter 407 (18) 3705 (2012)
DOI: 10.1016/j.physb.2012.05.025
See this article

The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO 2 high-k dielectrics

Ruo Zheng Wang, Sheng Li Wu, Xin Yu Li and Jin Tao Zhang
Solid-State Electronics 133 6 (2017)
DOI: 10.1016/j.sse.2017.04.004
See this article

Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium

N. Jain, Y. Zhu, D. Maurya, et al.
Journal of Applied Physics 115 (2) 024303 (2014)
DOI: 10.1063/1.4861137
See this article

Effect of crystallographic structure on electrical and mechanical characteristics of Sm2O3-Doped CeO2 films

M. Hartmanová, V. Navrátil, V. Buršíková, F. Kundracik and C. Mansilla
Russian Journal of Electrochemistry 47 (5) 505 (2011)
DOI: 10.1134/S1023193511050041
See this article

High-k Gate Dielectrics for CMOS Technology

Fu-Chien Chiu, Somnath Mondal and Tung-Ming Pan
High-k Gate Dielectrics for CMOS Technology 111 (2012)
DOI: 10.1002/9783527646340.ch5
See this article

High mobility field effect transistor of SnOx on glass using HfOx gate oxide

Chanjong Ju, Chulkwon Park, Hyeonseok Yang, et al.
Current Applied Physics 16 (3) 300 (2016)
DOI: 10.1016/j.cap.2015.12.015
See this article

Accurate Calculation of Gate Tunneling Current in Double-Gate and Single-Gate SOI MOSFETs Through Gate Dielectric Stacks

Ferney A. Chaves, David Jimenez, Francisco J. Garcia Ruiz, Andrés Godoy and Jordi Sune
IEEE Transactions on Electron Devices 59 (10) 2589 (2012)
DOI: 10.1109/TED.2012.2206597
See this article

Hafnium zirconate gate dielectric for advanced gate stack applications

R. I. Hegde, D. H. Triyoso, S. B. Samavedam and B. E. White
Journal of Applied Physics 101 (7) 074113 (2007)
DOI: 10.1063/1.2716399
See this article

Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric

Ming Wen, Jingping Xu, Lu Liu, Pui-To Lai and Wing-Man Tang
IEEE Transactions on Electron Devices 64 (3) 1020 (2017)
DOI: 10.1109/TED.2017.2650920
See this article

Oxide Ultrathin Films

Gennadi Bersuker, Keith McKenna and Alexander Shluger
Oxide Ultrathin Films 101 (2012)
DOI: 10.1002/9783527640171.ch5
See this article

Stability of HfO2/SiOx/Si surficial films at ultralow oxygen activity

E. Jud, M. Tang and Y.-M. Chiang
Journal of Applied Physics 103 (11) 114108 (2008)
DOI: 10.1063/1.2937900
See this article

Functional Metal Oxides

Lily Mandal, Weinan Lin, James Lourembam, Satishchandra Ogale and Tom Wu
Functional Metal Oxides 419 (2013)
DOI: 10.1002/9783527654864.ch15
See this article

Atomic Layer Deposition of Aluminum Oxide for Surface Passivation of InGaAs∕InP Heterojunction Bipolar Transistors

R. Driad, F. Benkhelifa, L. Kirste, M. Mikulla and O. Ambacher
Journal of The Electrochemical Society 158 (12) H1279 (2011)
DOI: 10.1149/2.060112jes
See this article

Protective layer of AL2O3 nanocomposites and surface composition after electrical stress

Christian Meichsner, Timothy Clark, Peter Groeppel, et al.
IEEE Transactions on Dielectrics and Electrical Insulation 22 (5) 2944 (2015)
DOI: 10.1109/TDEI.2015.004939
See this article

Effects of plasma immersion ion nitridation on dielectric properties of HfO2

L. Wang, K. Xue, J. B. Xu, A. P. Huang and Paul K. Chu
Applied Physics Letters 90 (12) 122901 (2007)
DOI: 10.1063/1.2715044
See this article

Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices

O. Khaldi, F. Jomni, P. Gonon, C. Mannequin and B. Yangui
Applied Physics A 116 (4) 1647 (2014)
DOI: 10.1007/s00339-014-8292-8
See this article

LanthanideN,N-Dimethylaminodiboranates: Highly Volatile Precursors for the Deposition of Lanthanide-Containing Thin Films

Scott R. Daly, Do Young Kim, Yu Yang, John R. Abelson and Gregory S. Girolami
Journal of the American Chemical Society 132 (7) 2106 (2010)
DOI: 10.1021/ja9098005
See this article

DIELECTRIC AND INTERFACE STABILITY OF LaSmO3 FILMS

WEITAO SU, QIUHUI ZHUANG, DEXUAN HUO and BIN LI
Surface Review and Letters 19 (06) 1250064 (2012)
DOI: 10.1142/S0218625X12500643
See this article

Oxygen vacancy in monoclinic HfO2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments

Peter Broqvist and Alfredo Pasquarello
Applied Physics Letters 89 (26) 262904 (2006)
DOI: 10.1063/1.2424441
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MOS Devices With High-κ (ZrO$_2$) $_x$(La $_2$O$_3$) $_{1-x}$ Alloy as Gate Dielectric Formed by Depositing ZrO $_2$/La$_2$O $_3$/ZrO$_2$ Laminate and Annealing

Yung-Hsien Wu, Lun-Lun Chen, Rong-Jhe Lyu, et al.
IEEE Transactions on Nanotechnology 11 (3) 483 (2012)
DOI: 10.1109/TNANO.2011.2178612
See this article

Ceramics Science and Technology

Sanjay Mathur, Aadesh Pratap Singh, Ralf Müller, et al.
Ceramics Science and Technology 291 (2014)
DOI: 10.1002/9783527631940.ch43
See this article

Microencapsulation of Moisture-Sensitive CaS:Eu[sup 2+] Particles with Aluminum Oxide

N. Avci, J. Musschoot, P. F. Smet, et al.
Journal of The Electrochemical Society 156 (11) J333 (2009)
DOI: 10.1149/1.3211959
See this article

Solvothermal approach for low temperature deposition of aluminium oxide thin films

XiaoFei Duan, Nguyen H. Tran, Nicholas K. Roberts and Robert N. Lamb
Thin Solid Films 518 (15) 4290 (2010)
DOI: 10.1016/j.tsf.2010.01.006
See this article

Defects in Microelectronic Materials and Devices

J Robertson, K Xiong and K Tse
Defects in Microelectronic Materials and Devices (2008)
DOI: 10.1201/9781420043778.ch9
See this article

Multiphonon mechanism of the ionization of traps in Al2O3: Experiment and numerical simulation

Yu. N. Novikov, V. A. Gritsenko and K. A. Nasyrov
JETP Letters 89 (10) 506 (2009)
DOI: 10.1134/S0021364009100075
See this article

Electrostatic Gating of Ultrathin Films

A.M. Goldman
Annual Review of Materials Research 44 (1) 45 (2014)
DOI: 10.1146/annurev-matsci-070813-113407
See this article

High temperature thermal stability of the HfO2/Ge (100) interface as a function of surface preparation studied by synchrotron radiation core level photoemission

Rajesh Kumar Chellappan, Durga Rao Gajula, David McNeill and Greg Hughes
Applied Surface Science 292 345 (2014)
DOI: 10.1016/j.apsusc.2013.11.142
See this article

Fabrication of polycrystalline aluminum oxide thin films via hydrolysis and hydrothermal reactions in solutions

XiaoFei Duan, Irving Liaw, Nguyen H. Tran and Robert N. Lamb
Thin Solid Films 520 (1) 25 (2011)
DOI: 10.1016/j.tsf.2011.06.003
See this article

Electrochemical characterization of nanostructured Ti–24Nb–4Zr–8Sn alloy in 3.5% NaCl solution

J. Li, S.J. Li, Y.L. Hao and R. Yang
International Journal of Hydrogen Energy 39 (30) 17452 (2014)
DOI: 10.1016/j.ijhydene.2014.01.144
See this article

Current transport analysis of ZrO2 thin films: Effects of post-deposition annealing

Heejun Jeong
Journal of the Korean Physical Society 65 (11) 1903 (2014)
DOI: 10.3938/jkps.65.1903
See this article

Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Yi Zhao, Koji Kita and Akira Toriumi
Applied Physics Letters 96 (24) 242901 (2010)
DOI: 10.1063/1.3455110
See this article

Effect of postdeposition annealing on electrical properties of RF-magnetron sputtered CeOx gate on 4H-silicon carbide

SooKiet Chuah, KuanYew Cheong, Zainovia Lockman and Zainuriah Hassan
physica status solidi (a) 208 (8) 1925 (2011)
DOI: 10.1002/pssa.201127154
See this article

Electron-Related Phenomena at the $\hbox{TaN/Al}_{2} \hbox{O}_{3}$ Interface

Rosario Rao, Paolo Lorenzi, Gabriella Ghidini, Fabrizio Palma and Fernanda Irrera
IEEE Transactions on Electron Devices 57 (3) 637 (2010)
DOI: 10.1109/TED.2009.2039100
See this article

High-k Gate Dielectrics for CMOS Technology

Yi Zhao
High-k Gate Dielectrics for CMOS Technology 185 (2012)
DOI: 10.1002/9783527646340.ch6
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Analytical modeling of direct tunneling current through gate stacks for the determination of suitable high-kdielectrics for nanoscale double-gate MOSFETs

Ghader Darbandy, Romain Ritzenthaler, François Lime, et al.
Semiconductor Science and Technology 26 (4) 045002 (2011)
DOI: 10.1088/0268-1242/26/4/045002
See this article

Method to characterize dielectric properties of powdery substances

M. Tuhkala, J. Juuti and H. Jantunen
Journal of Applied Physics 114 (1) 014108 (2013)
DOI: 10.1063/1.4812739
See this article

Atomic layer deposition of scandium-based oxides

Laura Nyns, Judit G. Lisoni, Geert Van den Bosch, Sven Van Elshocht and Jan Van Houdt
physica status solidi (a) 211 (2) 409 (2014)
DOI: 10.1002/pssa.201330080
See this article

Ceramics Science and Technology

Sanjay Mathur, Aadesh Pratap Singh, Ralf Müller, et al.
Ceramics Science and Technology 291 (2012)
DOI: 10.1002/9783527631957.ch12
See this article

Fabrication and Characterization of Polymer-Enhanced TSVs, Inductors, and Antennas for Mixed-Signal Silicon Interposer Platforms

Paragkumar A. Thadesar and Muhannad S. Bakir
IEEE Transactions on Components, Packaging and Manufacturing Technology 6 (3) 455 (2016)
DOI: 10.1109/TCPMT.2015.2511067
See this article

Oxygen vacancy in Al2O3: Photoluminescence study and first-principle simulation

V.A. Pustovarov, T.V. Perevalov, V.A. Gritsenko, T.P. Smirnova and A.P. Yelisseyev
Thin Solid Films 519 (19) 6319 (2011)
DOI: 10.1016/j.tsf.2011.04.014
See this article

Passivation of oxygen vacancy states in HfO2 by nitrogen

K. Xiong, J. Robertson and S. J. Clark
Journal of Applied Physics 99 (4) 044105 (2006)
DOI: 10.1063/1.2173688
See this article

Progress of High-k Dielectrics Applicable to SONOS-Type Nonvolatile Semiconductor Memories

Zhenjie Tang, Zhiguo Liu and Xinhua Zhu
Transactions on Electrical and Electronic Materials 11 (4) 155 (2010)
DOI: 10.4313/TEEM.2010.11.4.155
See this article

Physics-based surface potential, electric field and drain current model of aδp+Si1–xGexgate–drain underlap nanoscale n-TFET

Rupam Goswami, Brinda Bhowmick and Srimanta Baishya
International Journal of Electronics 1 (2016)
DOI: 10.1080/00207217.2016.1138514
See this article

Thermal stability of amorphous LaScO3 films on silicon

L. F. Edge, D. G. Schlom, S. Rivillon, et al.
Applied Physics Letters 89 (6) 062902 (2006)
DOI: 10.1063/1.2222302
See this article

Interface-controlled high dielectric constant Al2O3/TiOx nanolaminates with low loss and low leakage current density for new generation nanodevices

Geunhee Lee, Bo-Kuai Lai, Charudatta Phatak, Ram S. Katiyar and Orlando Auciello
Journal of Applied Physics 114 (2) 027001 (2013)
DOI: 10.1063/1.4811810
See this article

Interfacial atomic structures, energetics and band offsets of Ge:ZrO2 interfaces

Koon-Yiu Tse and John Robertson
Journal of Applied Physics 100 (9) 093713 (2006)
DOI: 10.1063/1.2369645
See this article

High-temperature thermal stability study of 1 nm Al2O3deposited on InAs surfaces investigated by synchrotron radiation based photoemission spectroscopy

Rajesh Kumar Chellappan, Durga Rao Gajula, David McNeill and Greg Hughes
Journal of Physics D: Applied Physics 47 (5) 055107 (2014)
DOI: 10.1088/0022-3727/47/5/055107
See this article

Band gaps and defect levels in functional oxides

J. Robertson, K. Xiong and S.J. Clark
Thin Solid Films 496 (1) 1 (2006)
DOI: 10.1016/j.tsf.2005.08.175
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Interfacial and electrical properties of radio frequency sputtered ultra-thin TiO2 film for gate oxide applications

Madhuchhanda Nath and Asim Roy
Journal of Materials Science: Materials in Electronics 26 (11) 9107 (2015)
DOI: 10.1007/s10854-015-3598-7
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High-K dielectrics for the gate stack

Jean-Pierre Locquet, Chiara Marchiori, Maryline Sousa, Jean Fompeyrine and Jin Won Seo
Journal of Applied Physics 100 (5) 051610 (2006)
DOI: 10.1063/1.2336996
See this article

The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers

P. Thangadurai, W.D. Kaplan, V. Mikhelashvili and G. Eisenstein
Microelectronics Reliability 49 (7) 716 (2009)
DOI: 10.1016/j.microrel.2009.04.003
See this article

Formation of thin-film HfO2/Si(100) structures by high-frequency magnetron sputtering

V. I. Rudakov, E. A. Bogoyavlenskaya, Yu. I. Denisenko and V. V. Naumov
Russian Microelectronics 40 (6) 383 (2011)
DOI: 10.1134/S1063739711060096
See this article

Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient

Yew Hoong Wong and Kuan Yew Cheong
Electronic Materials Letters 8 (1) 47 (2012)
DOI: 10.1007/s13391-011-1067-x
See this article

Control of the Dirac point in graphene by UV light

A. Yurgens, N. Lindvall, J. Sun, Y. Nam and Y. W. Park
JETP Letters 98 (11) 704 (2014)
DOI: 10.1134/S0021364013240211
See this article

Electronic stopping force of 12C, 28Si and 63Cu ions in HfO2 and SiO2 dielectric films

M. Msimanga, C.A. Pineda-Vargas, T. Hlatshwayo, et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 322 54 (2014)
DOI: 10.1016/j.nimb.2014.01.003
See this article

CMUTs with high-K atomic layer deposition dielectric material insulation layer

Toby Xu, Coskun Tekes and F. Degertekin
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 61 (12) 2121 (2014)
DOI: 10.1109/TUFFC.2014.006481
See this article

Deposition and post-deposition annealing of thin Y2O3 film on n-type Si in argon ambient

Hock Jin Quah and Kuan Yew Cheong
Materials Chemistry and Physics 130 (3) 1007 (2011)
DOI: 10.1016/j.matchemphys.2011.08.024
See this article

Comprehensive Semiconductor Science and Technology

J. Robertson
Comprehensive Semiconductor Science and Technology 132 (2011)
DOI: 10.1016/B978-0-44-453153-7.00120-6
See this article

Soft x-ray photoemission study of the thermal stability of the Al2O3/Ge (100) interface as a function of surface preparation

Rajesh Kumar Chellappan, Durga Rao Gajula, David McNeill and Greg Hughes
Journal of Applied Physics 114 (8) 084312 (2013)
DOI: 10.1063/1.4819214
See this article

Electrical instability in LaLuO3 based metal–oxide–semiconductor capacitors and role of the metal electrodes

Rosario Rao and Fernanda Irrera
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 31 (1) 01A116 (2013)
DOI: 10.1116/1.4774105
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Radiation Induced Charge Trapping in Sputtered ${\rm ZrO}_{\rm 2} \!\! : \!\! {\rm N}$ Dielectric Thin Films on Silicon

Ashwath Rao, Joyline D'sa, Saurabh Goyal and B. R. Singh
IEEE Transactions on Nuclear Science 61 (4) 2397 (2014)
DOI: 10.1109/TNS.2014.2329752
See this article

Atomic and electronic structures of lutetium oxide Lu2O3

V. V. Kaichev, T. I. Asanova, S. B. Erenburg, et al.
Journal of Experimental and Theoretical Physics 116 (2) 323 (2013)
DOI: 10.1134/S1063776113020131
See this article

A Thin-Film Transistor With High Drain Current Induced by a Trap-Assisted Electric Double Layer

Ankita Gangwar and Baquer Mazhari
IEEE Transactions on Electron Devices 63 (12) 4776 (2016)
DOI: 10.1109/TED.2016.2614673
See this article

Nanoscale CMOS

O. Engström, I. Z. Mitrovic, S. Hall, et al.
Nanoscale CMOS 23 (2013)
DOI: 10.1002/9781118621523.ch2
See this article

Ge-Based Nonvolatile Memory Formed on Si Substrate with Ge-Stabilized Tetragonal ZrO2 as Charge Trapping Layer

Yung-Hsien Wu, Jia-Rong Wu, Min-Lin Wu, Lun-Lun Chen and Chia-Chun Lin
Journal of The Electrochemical Society 158 (4) H410 (2011)
DOI: 10.1149/1.3547717
See this article

Correlation between phase and optical properties of yttrium-doped hafnium oxide nanocrystalline thin films

A. Ortega, E.J. Rubio, K. Abhilash and C.V. Ramana
Optical Materials 35 (9) 1728 (2013)
DOI: 10.1016/j.optmat.2013.05.017
See this article

Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators

Yi Zhao, Koji Kita, Kentaro Kyuno and Akira Toriumi
Applied Physics Letters 94 (4) 042901 (2009)
DOI: 10.1063/1.3075954
See this article

Trapped charge dynamics in a sol–gel based TiO2high-kgate dielectric silicon metal–oxide–semiconductor field effect transistor

M Ziaur Rahman Khan, D G Hasko, M S M Saifullah and M E Welland
Journal of Physics: Condensed Matter 21 (21) 215902 (2009)
DOI: 10.1088/0953-8984/21/21/215902
See this article

HfO2-assisted SiO2 reduction in HfO2/SiO2/Si stacks

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio and Akira Toriumi
Thin Solid Films 557 272 (2014)
DOI: 10.1016/j.tsf.2013.10.142
See this article

Ferroelectric-Gate Field Effect Transistor Memories

Mitsue Takahashi and Shigeki Sakai
Topics in Applied Physics, Ferroelectric-Gate Field Effect Transistor Memories 131 23 (2016)
DOI: 10.1007/978-94-024-0841-6_2
See this article

Effect of post-deposition annealing temperature on CeO2 thin film deposited on silicon substrate via RF magnetron sputtering technique

Soo Kiet Chuah, Kuan Yew Cheong, Zainovia Lockman and Zainuriah Hassan
Materials Science in Semiconductor Processing 14 (2) 101 (2011)
DOI: 10.1016/j.mssp.2011.01.007
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Capacitance–voltage characteristics of sub-nanometric Al2O3 / TiO2 laminates: dielectric and interface charge densities

Abdelkader Kahouli, Marwa Ben Elbahri, Oleg Lebedev and Ulrike Lüders
Journal of Physics: Condensed Matter 29 (27) 275301 (2017)
DOI: 10.1088/1361-648X/aa7237
See this article

Oxygen deficiency defects in amorphous Al2O3

T. V. Perevalov, O. E. Tereshenko, V. A. Gritsenko, et al.
Journal of Applied Physics 108 (1) 013501 (2010)
DOI: 10.1063/1.3455843
See this article

Titania/Alumina Bilayer Gate Dielectrics for Ge MOS Devices: Frequency- and Temperature-Dependent Electrical Characteristics

Shankar Swaminathan and Paul C. McIntyre
Electrochemical and Solid-State Letters 13 (9) G79 (2010)
DOI: 10.1149/1.3457480
See this article

Migration of oxygen vacancy in HfO2 and across the HfO2∕SiO2 interface: A first-principles investigation

Nathalie Capron, Peter Broqvist and Alfredo Pasquarello
Applied Physics Letters 91 (19) 192905 (2007)
DOI: 10.1063/1.2807282
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Conduction and field induced degradation in thin ZrO2 films sputtered in nitrogen containing plasma on silicon

Ashwath Rao, Joyline D’sa, Saurabh Goyal and B. R. Singh
Journal of Materials Science: Materials in Electronics 25 (3) 1583 (2014)
DOI: 10.1007/s10854-014-1772-y
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Analytical modeling of the gate tunneling leakage for the determination of adequate high-k dielectrics in double-gate SOI MOSFETs at the 22nm node

Ghader Darbandy, Romain Ritzenthaler, Francois Lime, et al.
Solid-State Electronics 54 (10) 1083 (2010)
DOI: 10.1016/j.sse.2010.06.015
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Novel photodefined polymer-embedded vias for silicon interposers

Paragkumar A Thadesar and Muhannad S Bakir
Journal of Micromechanics and Microengineering 23 (3) 035003 (2013)
DOI: 10.1088/0960-1317/23/3/035003
See this article

Electrochemical Mechanical Polishing of Copper with High Permittivity Abrasives

Weisi Li, Dongming Guo, Zhuji Jin, Zhe Wang and Zewei Yuan
Materials and Manufacturing Processes 28 (2) 207 (2013)
DOI: 10.1080/10426914.2012.677900
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Characterization of the interface between the Hf-based high-k thin film and the Si using spatially resolved electron energy-loss spectroscopy

X.F. Wang, Quan Li, P.F. Lee, J.Y. Dai and X.G. Gong
Micron 41 (1) 15 (2010)
DOI: 10.1016/j.micron.2009.07.009
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Nature and stability of the (100)Si∕LaAlO3 interface probed by paramagnetic defects

A. Stesmans, K. Clémer, V. V. Afanas’ev, L. F. Edge and D. G. Schlom
Applied Physics Letters 89 (11) 112121 (2006)
DOI: 10.1063/1.2219334
See this article

Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs

Yang Liu, A. Shanware, L. Colombo and R. Dutton
IEEE Electron Device Letters 27 (6) 489 (2006)
DOI: 10.1109/LED.2006.874760
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Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer

Kuniaki HASHIMOTO, Akio OHTA, Hideki MURAKAMI, Seiichiro HIGASHI and Seiichi MIYAZAKI
IEICE Transactions on Electronics E96.C (5) 674 (2013)
DOI: 10.1587/transele.E96.C.674
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First principles study of structural and electronic properties of cubic phase of ZrO2 and HfO2

Yong-Liang Yang, Xiao-Li Fan, Chong Liu and Run-Xin Ran
Physica B: Condensed Matter 434 7 (2014)
DOI: 10.1016/j.physb.2013.10.037
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Nanocrystalline LaYSrO films for liquid-crystal alignment via a solution process

Seon Yeong Kim, Hong-Gyu Park, Min-Jae Cho, Hae-Chang Jeong and Dae-Shik Seo
Liquid Crystals 41 (7) 940 (2014)
DOI: 10.1080/02678292.2014.894207
See this article

Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO 2 and fabricated at low temperature

Joel Molina, Reydezel Torres, Alok Ranjan and Kin-Leong Pey
Materials Science in Semiconductor Processing 66 191 (2017)
DOI: 10.1016/j.mssp.2017.05.001
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Ultrahigh resolution imaging of local structural distortions in intergrowth tungsten bronzes

A.I. Kirkland, J. Sloan and S. Haigh
Ultramicroscopy 107 (6-7) 501 (2007)
DOI: 10.1016/j.ultramic.2006.03.014
See this article

Handbook of Cleaning in Semiconductor Manufacturing

Muhammad M. Hussain, Denis Shamiryan, Vasile Paraschiv, Kenichi Sano and Karen A. Reinhardt
Handbook of Cleaning in Semiconductor Manufacturing 237 (2011)
DOI: 10.1002/9781118071748.ch7
See this article

Study on the surface erosion route to the fabrication of TiO2 hollow spheres

Liu Lei, Cui Yuming, Li Bo, Zhou Xingfu and Ding Weiping
Applied Surface Science 256 (8) 2596 (2010)
DOI: 10.1016/j.apsusc.2009.11.001
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First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si–SiO2–HfO2 stack

Peter Broqvist, Audrius Alkauskas, Julien Godet and Alfredo Pasquarello
Journal of Applied Physics 105 (6) 061603 (2009)
DOI: 10.1063/1.3055347
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Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

Shankar Swaminathan, Michael Shandalov, Yasuhiro Oshima and Paul C. McIntyre
Applied Physics Letters 96 (8) 082904 (2010)
DOI: 10.1063/1.3313946
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Robert H. Lipson
Photonics 133 (2015)
DOI: 10.1002/9781119011750.ch5
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Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

Vladimir Djara, Marilyne Sousa, Nikola Dordevic, et al.
Microelectronic Engineering 147 231 (2015)
DOI: 10.1016/j.mee.2015.04.102
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Understanding Structure and Stability of Monoclinic Zirconia Surfaces from First-Principles Calculations

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Topics in Catalysis 60 (6-7) 382 (2017)
DOI: 10.1007/s11244-016-0701-0
See this article

Band gaps and dielectric constants of amorphous hafnium silicates: A first-principles investigation

Peter Broqvist and Alfredo Pasquarello
Applied Physics Letters 90 (8) 082907 (2007)
DOI: 10.1063/1.2643300
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High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ${\rm ZrO}_{2}$ Gate Dielectric

Yana Gao, Xifeng Li, Longlong Chen, et al.
IEEE Electron Device Letters 35 (5) 554 (2014)
DOI: 10.1109/LED.2014.2310120
See this article

Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy 263 (2008)
DOI: 10.1016/B978-008045145-9.50016-2
See this article

Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

Jiro Yota, Hong Shen and Ravi Ramanathan
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (1) 01A134 (2013)
DOI: 10.1116/1.4769207
See this article

Optical studies of amorphous Ge nanostructures in Al2O3 produced by pulsed laser deposition

J. Martín-Sánchez, J. Toudert, R. Serna, A. de Andrés and J. García-López
Thin Solid Films 541 92 (2013)
DOI: 10.1016/j.tsf.2012.12.098
See this article

Nanoscale channel engineered double gate MOSFET for mixed signal applications using high-k dielectric

D Nirmal, P Vijayakumar, K Shruti and N Mohankumar
International Journal of Circuit Theory and Applications 41 (6) 608 (2013)
DOI: 10.1002/cta.1800
See this article

Synthesis and Dielectric Studies of Monoclinic Nanosized Zirconia

I. Flavia Princess Nesamani, V. Lakshmi Prabha, Aswathy Paul and D. Nirmal
Advances in Condensed Matter Physics 2014 1 (2014)
DOI: 10.1155/2014/828492
See this article

Bonding and interface states ofSi:HfO2andSi:ZrO2interfaces

P. W. Peacock, K. Xiong, K. Tse and J. Robertson
Physical Review B 73 (7) 075328 (2006)
DOI: 10.1103/PhysRevB.73.075328
See this article

Comparing Electron Recombination via Interfacial Modifications in Dye-Sensitized Solar Cells

Luping Li, Shikai Chen, Cheng Xu, et al.
ACS Applied Materials & Interfaces 6 (23) 20978 (2014)
DOI: 10.1021/am505742y
See this article

Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations

R.C.R. Santos, E. Longhinotti, V.N. Freire, R.B. Reimberg and E.W.S. Caetano
Chemical Physics Letters 637 172 (2015)
DOI: 10.1016/j.cplett.2015.08.004
See this article

Dielectric constants of amorphous hafnium aluminates: First-principles study

Hiroyoshi Momida, Tomoyuki Hamada, Yoshiteru Takagi, et al.
Physical Review B 75 (19) 195105 (2007)
DOI: 10.1103/PhysRevB.75.195105
See this article

Studies on Electrical Properties of Hybrid Polymeric Gate Dielectrics for Field Effect Transistors

Davoud Dastan, Suresh W. Gosavi and Nandu B. Chaure
Macromolecular Symposia 347 (1) 81 (2015)
DOI: 10.1002/masy.201400042
See this article

BEEM studies on metal high K-dielectric HfO2 interfaces

Yi Zheng, Cedric Troadec, Andrew T S Wee, et al.
Journal of Physics: Conference Series 61 1347 (2007)
DOI: 10.1088/1742-6596/61/1/266
See this article

Characterization of dielectric layers grown at low temperature by atomic layer deposition

Sylwia Gieraltowska, Lukasz Wachnicki, Bartlomiej S. Witkowski, et al.
Thin Solid Films 577 97 (2015)
DOI: 10.1016/j.tsf.2015.01.059
See this article

High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics

Mazran Esro, George Vourlias, Christopher Somerton, William I. Milne and George Adamopoulos
Advanced Functional Materials 25 (1) 134 (2015)
DOI: 10.1002/adfm.201402684
See this article

Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films

S. Dueñas, H. Castán, H. García, et al.
Journal of Non-Crystalline Solids 354 (2-9) 404 (2008)
DOI: 10.1016/j.jnoncrysol.2007.07.051
See this article

The atomic and electron structure of ZrO2

A. V. Shaposhnikov, D. V. Gritsenko, I. P. Petrenko, et al.
Journal of Experimental and Theoretical Physics 102 (5) 799 (2006)
DOI: 10.1134/S1063776106050128
See this article

Effects of annealing time on the electrical properties of the Y2O3gate on silicon

Hock Jin Quah and Kuan Yew Cheong
Journal of Experimental Nanoscience 10 (1) 19 (2015)
DOI: 10.1080/17458080.2013.781689
See this article

Industrial Chemistry of Oxides for Emerging Applications

Lech Pawłowski
Industrial Chemistry of Oxides for Emerging Applications 1 (2018)
DOI: 10.1002/9781119424079.ch1
See this article

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J. Charles Pravin, D. Nirmal, P. Prajoon, N. Mohan Kumar and J. Ajayan
Superlattices and Microstructures 104 470 (2017)
DOI: 10.1016/j.spmi.2017.03.012
See this article

Dielectric constant measurement of zeolite powders by time-domain reflectometry

Minwei Sun, Wolfgang Maichen, Ramdas Pophale, et al.
Microporous and Mesoporous Materials 123 (1-3) 10 (2009)
DOI: 10.1016/j.micromeso.2009.03.013
See this article

Multi-petahertz electron interference in Cr:Al2O3 solid-state material

Hiroki Mashiko, Yuta Chisuga, Ikufumi Katayama, et al.
Nature Communications 9 (1) (2018)
DOI: 10.1038/s41467-018-03885-7
See this article

Effect of nitrogen passivation/pre nitration on interface properties of atomic layer deposited HfO2

Savita Maurya
Journal of Materials Science: Materials in Electronics 29 (9) 7917 (2018)
DOI: 10.1007/s10854-018-8791-z
See this article

Photonic curing of sol–gel derived HfO2 dielectrics for organic field-effect transistors

Kornelius Tetzner, Kurt A. Schroder and Karlheinz Bock
Ceramics International 40 (10) 15753 (2014)
DOI: 10.1016/j.ceramint.2014.07.099
See this article

Trapping in GdSiO high-k films

R. Rao, R. Simoncini, H. D. B. Gottlob, M. Schmidt and F. Irrera
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29 (1) 01A902 (2011)
DOI: 10.1116/1.3521385
See this article

Computed and Experimental Absorption Spectra of the Perovskite CH3NH3PbI3

Xi Zhu, Haibin Su, Rudolph A. Marcus and Maria E. Michel-Beyerle
The Journal of Physical Chemistry Letters 5 (17) 3061 (2014)
DOI: 10.1021/jz501174e
See this article

Impact of ultrathin Al2O3 interlayer on thermal stability and leakage current properties of TiO2/Al2O3 stacking dielectrics

Hong-Bo Wang, Da-Yan Ma, Fei Ma and Ke-Wei Xu
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 30 (4) 040601 (2012)
DOI: 10.1116/1.4732737
See this article

Quantitative Analysis of Shape-Sensitive Interaction of a Charged Nanoplate and a Charged Nanowire

Orion Ciftja
Nano 10 (08) 1550114 (2015)
DOI: 10.1142/S1793292015501143
See this article

Silicon electro-optic modulator based on an ITO-integrated tunable directional coupler

Jin-Soo Kim and Jin Tae Kim
Journal of Physics D: Applied Physics 49 (7) 075101 (2016)
DOI: 10.1088/0022-3727/49/7/075101
See this article

Classical over-the-barrier model for neutralization of highly charged ions above thin dielectric films

R. E. Lake, C. E. Sosolik and J. M. Pomeroy
Physical Review A 87 (6) (2013)
DOI: 10.1103/PhysRevA.87.062901
See this article

Bound and resonant impurity states in a narrow gapped armchair graphene nanoribbon

B. S. Monozon and P. Schmelcher
Physical Review B 86 (24) (2012)
DOI: 10.1103/PhysRevB.86.245404
See this article

How stress can reduce dissipation in glasses

Jiansheng Wu and Clare C. Yu
Physical Review B 84 (17) 174109 (2011)
DOI: 10.1103/PhysRevB.84.174109
See this article

Nontrigonal Ge dangling bond interface defect in condensation-grown(100)Si1−xGex/SiO2

A. Stesmans, P. Somers and V. V. Afanas’ev
Physical Review B 79 (19) 195301 (2009)
DOI: 10.1103/PhysRevB.79.195301
See this article

Electrostatic Modulation of the Superfluid Density in an UltrathinLa2−xSrxCuO4Film

A. Rüfenacht, J.-P. Locquet, J. Fompeyrine, D. Caimi and P. Martinoli
Physical Review Letters 96 (22) 227002 (2006)
DOI: 10.1103/PhysRevLett.96.227002
See this article

Mechanism of the monoclinic-to-tetragonal phase transition induced in zirconia and hafnia by swift heavy ions

Abdenacer Benyagoub
Physical Review B 72 (9) 094114 (2005)
DOI: 10.1103/PhysRevB.72.094114
See this article

Silizium-Halbleitertechnologie

Ulrich Hilleringmann
Silizium-Halbleitertechnologie 177 (2019)
DOI: 10.1007/978-3-658-23444-7_11
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Prospects and challenges of perovskite type transparent conductive oxides in photovoltaic applications. Part II – Synthesis and deposition

Muhammad Arif Riza, Mohd Adib Ibrahim, Ubani Charles Ahamefula, et al.
Solar Energy 139 309 (2016)
DOI: 10.1016/j.solener.2016.08.045
See this article

Unipolar resistive switching characteristics of pnictogen oxide films: Case study of Sb2O5

Youngbae Ahn, Seung Wook Ryu, Jong Ho Lee, et al.
Journal of Applied Physics 112 (10) 104105 (2012)
DOI: 10.1063/1.4766415
See this article

Implementation of Low-Power Electronic Devices Using Solution-Processed Tantalum Pentoxide Dielectric

Jungwoo Heo, Song Yi Park, Jae Won Kim, et al.
Advanced Functional Materials 28 (28) 1704215 (2018)
DOI: 10.1002/adfm.201704215
See this article

First-principles study on leakage current caused by oxygen vacancies at HfO2/SiO2/Si interface

Kensuke Takagi and Tomoya Ono
Japanese Journal of Applied Physics 57 (6) 066501 (2018)
DOI: 10.7567/JJAP.57.066501
See this article

Electron spin resonance features of the Ge Pb1 dangling bond defect in condensation-grown (100)Si/SiO2/Si1−xGex/SiO2 heterostructures

P. Somers, A. Stesmans, L. Souriau and V. V. Afanas’ev
Journal of Applied Physics 112 (7) 074501 (2012)
DOI: 10.1063/1.4748313
See this article

Stress and texture development during sputtering of yttria, zirconia, and yttria stabilized zirconia films on Si substrates

K. V. L. V. Narayanachari and Srinivasan Raghavan
Journal of Applied Physics 112 (7) 074910 (2012)
DOI: 10.1063/1.4757924
See this article

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Shahab Siddiqui, Takashi Ando, Rajan K. Pandey and Dominic Schepis
Handbook of Thin Film Deposition 107 (2018)
DOI: 10.1016/B978-0-12-812311-9.00005-0
See this article

Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations

M. Badylevich, S. Shamuilia, V. V. Afanas’ev, et al.
Applied Physics Letters 90 (25) 252101 (2007)
DOI: 10.1063/1.2746419
See this article

Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

S. Spiga, R. Rao, L. Lamagna, et al.
Journal of Applied Physics 112 (1) 014107 (2012)
DOI: 10.1063/1.4731746
See this article

Ambipolar leakage suppression in electron–hole bilayer TFET: investigation and analysis

Ashita, Sajad A. Loan, Abdullah G. Alharbi and Mohammad Rafat
Journal of Computational Electronics (2018)
DOI: 10.1007/s10825-018-1184-y
See this article

First principle study of single electron transistor based on metal-organic complex of dibenzothiophene

Anu, Anurag Srivastava and Mohd. Shahid Khan
Organic Electronics 53 227 (2018)
DOI: 10.1016/j.orgel.2017.11.042
See this article

Crystalline phase dependent electrical properties of Mg incorporated tetragonal phase stabilized ZrO 2 high-κ dielectric layer in Si based MOS capacitors

J. Udaya Bhanu, A. Amutha, G. Ramesh Babu, B. Sundaravel and P. Thangadurai
Materials Science in Semiconductor Processing 81 7 (2018)
DOI: 10.1016/j.mssp.2018.02.031
See this article

Defect correlated with positive charge trapping in functional HfO 2 layers on (100)Si revealed by electron spin resonance: Evidence for oxygen vacancy?

A. Stesmans and V.V. Afanas'ev
Microelectronic Engineering 178 112 (2017)
DOI: 10.1016/j.mee.2017.04.035
See this article

Investigation on the dielectric properties of titanium-loaded ionic liquid-based nano-organosilica as a novel material

Binazir Vaziri, Shaaker Hajati and Dawood Elhamifar
Advanced Powder Technology 29 (3) 813 (2018)
DOI: 10.1016/j.apt.2017.12.022
See this article

Depth resolved band alignments of ultrathin TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 dynamic random access memory capacitors

Sang Yeon Lee, Jaewan Chang, Younsoo Kim, et al.
Applied Physics Letters 105 (20) 201603 (2014)
DOI: 10.1063/1.4902244
See this article

Interface formation energy, bonding, energy band alignment in α-NaYF 4 related core shell models: For future multi-layer core shell luminescence materials

Bolong HUANG, Hao DONG, Ka-Leung Wong, Lingdong SUN and Chunhua YAN
Journal of Rare Earths 35 (4) 315 (2017)
DOI: 10.1016/S1002-0721(17)60915-3
See this article

Energy band alignment of HfO2 on p-type (100)InP

Meng-Meng Yang, Hai-Ling Tu, Jun Du, et al.
Rare Metals 36 (3) 198 (2017)
DOI: 10.1007/s12598-014-0348-6
See this article

β-Ga2O3-based metal–oxide–semiconductor photodiodes with HfO2 as oxide

Takayoshi Oshima, Makoto Hashikawa, Sansei Tomizawa, et al.
Applied Physics Express 11 (11) 112202 (2018)
DOI: 10.7567/APEX.11.112202
See this article

Defect-Free Copolymer Gate Dielectrics for Gating MoS2 Transistors

Min Je Kim, Yongsuk Choi, Jihoo Seok, et al.
The Journal of Physical Chemistry C 122 (23) 12193 (2018)
DOI: 10.1021/acs.jpcc.8b03092
See this article

Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric

Jingping Xu, Ming Wen, Xinyuan Zhao, et al.
Nanotechnology 29 (34) 345201 (2018)
DOI: 10.1088/1361-6528/aac853
See this article

Charge-Trapping Non-Volatile Memories

E. Verrelli and D. Tsoukalas
Charge-Trapping Non-Volatile Memories 157 (2017)
DOI: 10.1007/978-3-319-48705-2_5
See this article

Temperature independent low loss dielectrics based on quaternary pyrochlore oxides

Gabriella Giampaoli, Theeranun Siritanon, Blake Day, Jun Li and M.A. Subramanian
Progress in Solid State Chemistry 50 16 (2018)
DOI: 10.1016/j.progsolidstchem.2018.06.001
See this article

Effect of surfactant and mineralizer on the dielectric properties of zirconia nanocrsytals

A. Uma Maheswari, Sreedevi R. Mohan and M. Sivakumar
Applied Surface Science 427 1174 (2018)
DOI: 10.1016/j.apsusc.2017.08.147
See this article

Effects of annealing on electrical performance of multilayer MoS2transistors with atomic layer deposited HfO2gate dielectric

Ming Wen, Jingping Xu, Lu Liu, Pui-To Lai and Wing-Man Tang
Applied Physics Express 9 (9) 095202 (2016)
DOI: 10.7567/APEX.9.095202
See this article

Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

V. Mikhelashvili, R. Padmanabhan, B. Meyler, et al.
Journal of Applied Physics 118 (13) 134504 (2015)
DOI: 10.1063/1.4932031
See this article

Band alignment and interfacial chemical structure of the HfLaO/InGaZnO4 heterojunction investigated by x-ray photoelectron spectroscopy

Ling-Xuan Qian, Ze-Han Wu, Yi-Yu Zhang, et al.
Journal of Physics D: Applied Physics 50 (14) 145106 (2017)
DOI: 10.1088/1361-6463/aa5dda
See this article

Effects of post-deposition annealing time in oxygen ambient on Y2O3 film deposited on silicon substrate

H. J. Quah and K. Y. Cheong
Materials Research Innovations 18 (sup6) S6-495 (2014)
DOI: 10.1179/1432891714Z.0000000001032
See this article

Electronic properties of hafnium oxide: A contribution from defects and traps

Vladimir A. Gritsenko, Timofey V. Perevalov and Damir R. Islamov
Physics Reports 613 1 (2016)
DOI: 10.1016/j.physrep.2015.11.002
See this article

High-ĸ dielectric oxide as an interfacial layer with enhanced photo-generation for Gr/Si solar cells

Muhammad Fahad Bhopal, Kamran Akbar, Malik Abdul Rehman, et al.
Carbon 125 56 (2017)
DOI: 10.1016/j.carbon.2017.09.038
See this article

Deep and fast free-space electro-absorption modulation in a mobility-independent graphene-loaded Bragg resonator

Spyros Doukas, Alma Chatzilari, Alva Dagkli, Andreas Papagiannopoulos and Elefterios Lidorikis
Applied Physics Letters 113 (1) 011102 (2018)
DOI: 10.1063/1.5030699
See this article

Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta2O5/Si interface

Ashwath Rao, Ankita Verma and B.R. Singh
Radiation Effects and Defects in Solids 170 (6) 510 (2015)
DOI: 10.1080/10420150.2015.1052433
See this article

A new grounded lamination gate (GLG) for diminished fringe-capacitance effects in high-/spl kappa/ gate-dielectric MOSFETs

M.J. Kumar, V. Venkataraman and S.K. Gupta
IEEE Transactions on Electron Devices 53 (10) 2578 (2006)
DOI: 10.1109/TED.2006.882268
See this article

Atomistic simulations of displacement cascades in Y 2 O 3 single crystal

Manan Dholakia, Sharat Chandra, M.C. Valsakumar and S. Mathi Jaya
Journal of Nuclear Materials 454 (1-3) 96 (2014)
DOI: 10.1016/j.jnucmat.2014.07.044
See this article

Channel Hot-Carrier Degradation in Short-Channel Transistors With High- $k$/Metal Gate Stacks

E. Amat, T. Kauerauf, R. Degraeve, et al.
IEEE Transactions on Device and Materials Reliability 9 (3) 425 (2009)
DOI: 10.1109/TDMR.2009.2024129
See this article

Nonlinear Optical Properties of Si Nanodot in ${\rm Al}_{2}{\rm O}_{3}$ Matrix

Anchala, Shiv Prasad Purohit and Kailash Chandra Mathur
IEEE Journal of Quantum Electronics 48 (5) 628 (2012)
DOI: 10.1109/JQE.2012.2189097
See this article

Intrinsically ionic conductive cellulose nanopapers applied as all solid dielectrics for low voltage organic transistors

Shilei Dai, Yingli Chu, Dapeng Liu, et al.
Nature Communications 9 (1) (2018)
DOI: 10.1038/s41467-018-05155-y
See this article

Auger electron spectroscopy study of semiconductor surfaces: Effect of cleaning in inert atmosphere

Jolien Debehets, Sérgio M. C. Miranda, Pía Homm, et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 34 (4) 041227 (2016)
DOI: 10.1116/1.4955149
See this article

Electrically Polarized Biomaterials

Syed A. M. Tofail and Joanna Bauer
Advanced Materials 28 (27) 5470 (2016)
DOI: 10.1002/adma.201505403
See this article

Transparent conducting oxides for electro-optical plasmonic modulators

Viktoriia E. Babicheva, Alexandra Boltasseva and Andrei V. Lavrinenko
Nanophotonics 4 (1) (2015)
DOI: 10.1515/nanoph-2015-0004
See this article

Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics

K.C. Lin, P.C. Juan, C.H. Liu, M.C. Wang and C.H. Chou
Microelectronics Reliability 55 (11) 2198 (2015)
DOI: 10.1016/j.microrel.2015.07.045
See this article

Rare earth titano-silicates for high k gate dielectric applications

M. Rakhi and G. Subodh
Ceramics International 42 (9) 10886 (2016)
DOI: 10.1016/j.ceramint.2016.03.220
See this article

Proton Conducting Graphene Oxide/Chitosan Composite Electrolytes as Gate Dielectrics for New-Concept Devices

Ping Feng, Peifu Du, Changjin Wan, Yi Shi and Qing Wan
Scientific Reports 6 (1) 34065 (2016)
DOI: 10.1038/srep34065
See this article

Advances in nanowire bioelectronics

Wei Zhou, Xiaochuan Dai and Charles M Lieber
Reports on Progress in Physics 80 (1) 016701 (2017)
DOI: 10.1088/0034-4885/80/1/016701
See this article

Effects of the dielectric properties of the ceramic–solvent interface on the binding of proteins to oxide ceramics: a non-local electrostatic approach

Alexander I Rubinstein, Renat F Sabirianov and Fereydoon Namavar
Nanotechnology 27 (41) 415703 (2016)
DOI: 10.1088/0957-4484/27/41/415703
See this article

Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories

Robin Khosla, Erlend Granbo Rolseth, Pawan Kumar, et al.
IEEE Transactions on Device and Materials Reliability 17 (1) 80 (2017)
DOI: 10.1109/TDMR.2017.2659760
See this article

Physical and electrical properties of thermal oxidized Sm2O3 gate oxide thin film on Si substrate: Influence of oxidation durations

Kian Heng Goh, A.S.M.A. Haseeb and Yew Hoong Wong
Thin Solid Films 606 80 (2016)
DOI: 10.1016/j.tsf.2016.03.051
See this article

Interface and electrical properties of ultra-thin HfO2 film grown by radio frequency sputtering

Madhuchhanda Nath and Asim Roy
Physica B: Condensed Matter 482 43 (2016)
DOI: 10.1016/j.physb.2015.12.007
See this article

Investigation of high-kyttrium copper titanate thin films as alternative gate dielectrics

Anna Grazia Monteduro, Zoobia Ameer, Silvia Rizzato, et al.
Journal of Physics D: Applied Physics 49 (40) 405303 (2016)
DOI: 10.1088/0022-3727/49/40/405303
See this article

Computation of Dielectric Response in Molecular Solids for High Capacitance Organic Dielectrics

Henry M. Heitzer, Tobin J. Marks and Mark A. Ratner
Accounts of Chemical Research 49 (9) 1614 (2016)
DOI: 10.1021/acs.accounts.6b00173
See this article

Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

M. Popovici, J. Swerts, A. Redolfi, et al.
Applied Physics Letters 104 (8) 082908 (2014)
DOI: 10.1063/1.4866860
See this article

Current–voltage and low-frequency noise analysis of heterojunction diodes with various passivation layers

Young-Uk Ko, Ho-Jin Yun, Kwang-Seok Jeong, et al.
Thin Solid Films 598 109 (2016)
DOI: 10.1016/j.tsf.2015.12.009
See this article

The peculiarities of light absorption and light emission in Cu-doped Y-stabilized ZrO2 nanopowders

N. Korsunska, M. Baran, V. Papusha, et al.
Applied Nanoscience (2018)
DOI: 10.1007/s13204-018-0839-0
See this article

High temperature pulsed-gate robustness testing of SiC power MOSFETs

A. Fayyaz and A. Castellazzi
Microelectronics Reliability 55 (9-10) 1724 (2015)
DOI: 10.1016/j.microrel.2015.06.141
See this article

Microstructure tuning facilitated photo-efficiency enhancement and environmental benign nature of HfO 2 /Mo/HfO 2 multilayer films

P. Dubey, J. Gomez, S. Manandhar, V. Shutthanandan and C.V. Ramana
Solar Energy 166 146 (2018)
DOI: 10.1016/j.solener.2017.12.021
See this article

Dielectric Engineering of Nanostructured Layers to Control the Transport of Injected Charges in Thin Dielectrics

Kremena Makasheva, Christina Villeneuve-Faure, Caroline Bonafos, et al.
IEEE Transactions on Nanotechnology 15 (6) 839 (2016)
DOI: 10.1109/TNANO.2016.2553179
See this article

Interface chemistry study of InSb/Al 2 O 3 stacks upon in situ post deposition annealing by synchrotron radiation photoemission spectroscopy

Xiaoran Shi, Xinglu Wang, Yong Sun, et al.
Applied Surface Science 425 932 (2017)
DOI: 10.1016/j.apsusc.2017.07.001
See this article

The structure of the SiO2∕Si(100) interface from a restraint-free search using computer simulations

Dominik Fischer, Alessandro Curioni, Salomon Billeter and Wanda Andreoni
Applied Physics Letters 88 (1) 012101 (2006)
DOI: 10.1063/1.2158520
See this article

OPTICAL VIBRATION MODES IN SPHERICAL CORE-SHELL QUANTUM DOTS

Y. XING, X. X. LIANG and Z. P. WANG
Modern Physics Letters B 27 (18) 1350134 (2013)
DOI: 10.1142/S0217984913501340
See this article

Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors

L. Sambuco Salomone, J. Lipovetzky, S.H. Carbonetto, et al.
Thin Solid Films 600 36 (2016)
DOI: 10.1016/j.tsf.2016.01.007
See this article

Optical Properties of Nonstoichiometric Tantalum Oxide TaOx (x < 5/2) According to Spectral-Ellipsometry and Raman-Scattering Data

V. N. Kruchinin, V. A. Volodin, T. V. Perevalov, et al.
Optics and Spectroscopy 124 (6) 808 (2018)
DOI: 10.1134/S0030400X18060140
See this article

Stored Coulomb Self-Energy of a Uniformly Charged Rectangular Plate

Orion Ciftja
Advances in Mathematical Physics 2016 1 (2016)
DOI: 10.1155/2016/7207536
See this article

Band offsets, Schottky barrier heights, and their effects on electronic devices

John Robertson
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (5) 050821 (2013)
DOI: 10.1116/1.4818426
See this article

Probing the properties of atomic layer deposited ZrO2 films on p-Germanium substrates

Ariadne P. Kerasidou, Martha A. Botzakaki, Nikolaos Xanthopoulos, et al.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (1) 01A126 (2013)
DOI: 10.1116/1.4768166
See this article

Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate

V. Mikhelashvili, B. Meyler, Y. Shneider, et al.
Journal of Applied Physics 113 (7) 074503 (2013)
DOI: 10.1063/1.4791761
See this article

Reduction of interfacial SiO2 at HfO2/Si interface with Ta2O5 cap

Kazuyoshi Kobashi, Takahiro Nagata, Atsushi Ogura, Toshihide Nabatame and Toyohiro Chikyow
Journal of Applied Physics 114 (1) 014106 (2013)
DOI: 10.1063/1.4811691
See this article

Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

R. D. Long, C. M. Jackson, J. Yang, et al.
Applied Physics Letters 103 (20) 201607 (2013)
DOI: 10.1063/1.4827102
See this article

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

Dayu Zhou, Jin Xu, Qing Li, et al.
Applied Physics Letters 103 (19) 192904 (2013)
DOI: 10.1063/1.4829064
See this article

Growth and properties of crystalline barium oxide on the GaAs(100) substrate

M. Yasir, J. Dahl, M. Kuzmin, et al.
Applied Physics Letters 103 (19) 191601 (2013)
DOI: 10.1063/1.4828794
See this article

Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses

Weichun Luo, Hong Yang, Wenwu Wang, et al.
Applied Physics Letters 103 (18) 183502 (2013)
DOI: 10.1063/1.4826918
See this article

Investigation of the gate oxide leakage current of low temperature formed hafnium oxide films

E. Verrelli and D. Tsoukalas
Journal of Applied Physics 113 (11) 114103 (2013)
DOI: 10.1063/1.4795278
See this article

Band offsets of nitrided ultrathin hafnium silicate films

N. T. Barrett, O. Renault, P. Besson, Y. Le Tiec and F. Martin
Applied Physics Letters 88 (16) 162906 (2006)
DOI: 10.1063/1.2196235
See this article

Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics

Eun Ji Kim, Michael Shandalov, Krishna C. Saraswat and Paul C. McIntyre
Applied Physics Letters 98 (3) 032108 (2011)
DOI: 10.1063/1.3527977
See this article

High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition

Flora M. Li, Bernhard C. Bayer, Stephan Hofmann, et al.
Applied Physics Letters 98 (25) 252903 (2011)
DOI: 10.1063/1.3601487
See this article

Atomic and electronic structure of amorphous and crystalline hafnium oxide: X-ray photoelectron spectroscopy and density functional calculations

T. V. Perevalov, V. A. Gritsenko, S. B. Erenburg, et al.
Journal of Applied Physics 101 (5) 053704 (2007)
DOI: 10.1063/1.2464184
See this article

Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices

Shaoheng Cheng, Liwen Sang, Meiyong Liao, et al.
Applied Physics Letters 101 (23) 232907 (2012)
DOI: 10.1063/1.4770059
See this article

Hot electron transport in Au–HfO2–SiO2–Si structures studied by ballistic electron emission spectroscopy

Yi Zheng, Andrew T. S. Wee, K. L. Pey, et al.
Applied Physics Letters 90 (14) 142915 (2007)
DOI: 10.1063/1.2720346
See this article

Effect of ionic substitutions on the structure and dielectric properties of hafnia: A first principles study

Eric Cockayne
Journal of Applied Physics 103 (8) 084103 (2008)
DOI: 10.1063/1.2903870
See this article

Reduced electron back-injection in Al2O3/AlOx/Al2O3/graphene charge-trap memory devices

Sejoon Lee, Emil B. Song, Sung Min Kim, et al.
Applied Physics Letters 101 (24) 243109 (2012)
DOI: 10.1063/1.4770381
See this article

Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

O. Engström, B. Raeissi and J. Piscator
Journal of Applied Physics 103 (10) 104101 (2008)
DOI: 10.1063/1.2921795
See this article

Control of interfacial silicate between HfO2 and Si by high concentration ozone

L. Wang, K. Xue, J. B. Xu, A. P. Huang and Paul K. Chu
Applied Physics Letters 88 (7) 072903 (2006)
DOI: 10.1063/1.2173708
See this article

Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide

R. Driad, R. E. Sah, R. Schmidt and L. Kirste
Applied Physics Letters 100 (1) 014102 (2012)
DOI: 10.1063/1.3673564
See this article

Structural and dielectric properties of epitaxial Sm2O3 thin films

H. Yang, H. Wang, H. M. Luo, et al.
Applied Physics Letters 92 (6) 062905 (2008)
DOI: 10.1063/1.2842416
See this article

Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on InP substrates

Xinqiang Zhang, Hailing Tu, Hongbin Zhao, et al.
Applied Physics Letters 99 (13) 132902 (2011)
DOI: 10.1063/1.3643470
See this article

Electron-phonon interaction effects on the direct gap transitions of nanoscale Si films

V. K. Kamineni and A. C. Diebold
Applied Physics Letters 99 (15) 151903 (2011)
DOI: 10.1063/1.3650470
See this article

Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators

V. V. Afanas’ev, S. Shamuilia, A. Stesmans, et al.
Applied Physics Letters 88 (13) 132111 (2006)
DOI: 10.1063/1.2191736
See this article

Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

Jaesoo Ahn, Irina Geppert, Marika Gunji, et al.
Applied Physics Letters 99 (23) 232902 (2011)
DOI: 10.1063/1.3662966
See this article

Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

Peter Broqvist, Audrius Alkauskas and Alfredo Pasquarello
Applied Physics Letters 92 (13) 132911 (2008)
DOI: 10.1063/1.2907704
See this article

Hafnium oxide gate dielectrics on sulfur-passivated germanium

Martin M. Frank, Steven J. Koester, Matthew Copel, et al.
Applied Physics Letters 89 (11) 112905 (2006)
DOI: 10.1063/1.2338751
See this article

Single shot measurement of the lifetime of a trapped electron in the gate dielectric of a high-k field effect transistor

M. Ziaur Rahman Khan, D. G. Hasko, M. S. M. Saifullah and M. E. Welland
Applied Physics Letters 93 (19) 193501 (2008)
DOI: 10.1063/1.3013576
See this article

Effect of Al addition on the microstructure and electronic structure of HfO2 film

X. F. Wang, Quan Li, R. F. Egerton, et al.
Journal of Applied Physics 101 (1) 013514 (2007)
DOI: 10.1063/1.2405741
See this article

Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon

S. Dueñas, H. Castán, H. García, et al.
Journal of Applied Physics 99 (5) 054902 (2006)
DOI: 10.1063/1.2177383
See this article

Defect states in the high-dielectric-constant gate oxide HfSiO4

K. Xiong, Y. Du, K. Tse and J. Robertson
Journal of Applied Physics 101 (2) 024101 (2007)
DOI: 10.1063/1.2409662
See this article

Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

J. Müller, S. Knebel, D. Bräuhaus and U. Schröder
Applied Physics Letters 100 (8) 082905 (2012)
DOI: 10.1063/1.3688915
See this article

Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces

V. V. Afanas’ev, A. Stesmans, L. F. Edge, et al.
Applied Physics Letters 88 (3) 032104 (2006)
DOI: 10.1063/1.2164432
See this article

Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

Jung-Kyu Lee, Sunghun Jung, Jinwon Park, et al.
Applied Physics Letters 101 (10) 103506 (2012)
DOI: 10.1063/1.4751248
See this article

Spectroscopic investigation of the electronic structure of thin atomic layer deposition HfO2 films

Silma Alberton Corrêa, Simone Brizzi and Dieter Schmeisser
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (1) 01A117 (2016)
DOI: 10.1116/1.4935338
See this article

Homogeneous pinhole free 1 nm Al2O3 tunnel barriers on graphene

B. Dlubak, M.-B. Martin, C. Deranlot, et al.
Applied Physics Letters 101 (20) 203104 (2012)
DOI: 10.1063/1.4765348
See this article

Synergistic effect of non-thermal plasma–catalysis hybrid system on methane complete oxidation over Pd-based catalysts

Heesoo Lee, Dae-Hoon Lee, Young-Hoon Song, et al.
Chemical Engineering Journal 259 761 (2015)
DOI: 10.1016/j.cej.2014.07.128
See this article

Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers

J. A. Caraveo-Frescas, M. N. Hedhili, H. Wang, U. Schwingenschlögl and H. N. Alshareef
Applied Physics Letters 100 (10) 102111 (2012)
DOI: 10.1063/1.3692580
See this article

Internal photoemission at interfaces of high-κ insulators with semiconductors and metals

V. V. Afanas’ev and A. Stesmans
Journal of Applied Physics 102 (8) 081301 (2007)
DOI: 10.1063/1.2799091
See this article

Spectroscopic and electrical properties of atomic layer deposition Al2O3 gate dielectric on surface pretreated Si substrate

Min Xu, Cong-Hui Xu, Shi-Jin Ding, et al.
Journal of Applied Physics 99 (7) 074109 (2006)
DOI: 10.1063/1.2187409
See this article

Room Temperature Antiferromagnetic Ordering of Nanocrystalline Tb1.90Ni0.10O3

J. Mandal, M. Dalal, B. J. Sarkar and P. K. Chakrabarti
Journal of Electronic Materials 46 (2) 1107 (2017)
DOI: 10.1007/s11664-016-5077-1
See this article

Experimental investigation of the electrical properties of atomic layer deposited hafnium-rich silicate films on n-type silicon

S. Dueñas, H. Castán, H. García, et al.
Journal of Applied Physics 100 (9) 094107 (2006)
DOI: 10.1063/1.2358831
See this article

Paramagnetic point defects in (100)Si∕LaAlO3 structures: Nature and stability of the interface

K. Clémer, A. Stesmans, V. V. Afanas’ev, L. F. Edge and D. G. Schlom
Journal of Applied Physics 102 (3) 034516 (2007)
DOI: 10.1063/1.2749423
See this article

Band offsets of high K gate oxides on III-V semiconductors

J. Robertson and B. Falabretti
Journal of Applied Physics 100 (1) 014111 (2006)
DOI: 10.1063/1.2213170
See this article

Quadrupole second harmonic generation and sum-frequency generation in ZnO quantum dots

Deepti Maikhuri, S. P. Purohit and K. C. Mathur
AIP Advances 5 (4) 047115 (2015)
DOI: 10.1063/1.4917494
See this article

Effect of Al and Y incorporation on the structure of HfO2

X. F. Wang, Quan Li and M. S. Moreno
Journal of Applied Physics 104 (9) 093529 (2008)
DOI: 10.1063/1.2973195
See this article

Effects of Ta incorporation in La2O3 gate dielectric of InGaZnO thin-film transistor

L. X. Qian, P. T. Lai and W. M. Tang
Applied Physics Letters 104 (12) 123505 (2014)
DOI: 10.1063/1.4869761
See this article

Phase control of HfO2-based dielectric films for higher-k materials

Jae Ho Lee, Il-Hyuk Yu, Sang Young Lee and Cheol Seong Hwang
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32 (3) 03D109 (2014)
DOI: 10.1116/1.4862952
See this article

Memcapacitive characteristics in reactive-metal (Mo, Al)/HfOX/n-Si structures through migration of oxygen by applied voltage

Paul Yang, Young Jun Noh, Yoon-Jae Baek, et al.
Applied Physics Letters 108 (5) 052108 (2016)
DOI: 10.1063/1.4941548
See this article

Effects of ozone oxidation on interfacial and dielectric properties of thin HfO2 films

L. Wang, Paul K. Chu, Andre Anders and Nathan W. Cheung
Journal of Applied Physics 104 (5) 054117 (2008)
DOI: 10.1063/1.2976340
See this article

Multicolor and near-infrared electroluminescence from the light-emitting devices with rare-earth doped TiO2 films

Chen Zhu, Chunyan Lv, Zhifei Gao, et al.
Applied Physics Letters 107 (13) 131103 (2015)
DOI: 10.1063/1.4932064
See this article

Thermally stable voltage-controlled perpendicular magnetic anisotropy in Mo|CoFeB|MgO structures

Xiang Li, Guoqiang Yu, Hao Wu, et al.
Applied Physics Letters 107 (14) 142403 (2015)
DOI: 10.1063/1.4932553
See this article

Growth of high-density Ir nanocrystals by atomic layer deposition for nonvolatile nanocrystal memory applications

Xiao-Jie Liu, Lin Zhu, Xue-Fei Li, et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32 (4) 042201 (2014)
DOI: 10.1116/1.4878942
See this article

Interplay between gadolinium dopants and oxygen vacancies in HfO2: A density functional theory plus Hubbard U investigation

Wei Zhang and Z. F. Hou
Journal of Applied Physics 115 (12) 124104 (2014)
DOI: 10.1063/1.4869539
See this article

Substrate dielectric effects on graphene field effect transistors

Zhaoying Hu, Dhiraj Prasad Sinha, Ji Ung Lee and Michael Liehr
Journal of Applied Physics 115 (19) 194507 (2014)
DOI: 10.1063/1.4879236
See this article

Thermal annealing effect on the interface structure of high-κ LaScO3 on silicon

F. Liu and G. Duscher
Applied Physics Letters 91 (15) 152906 (2007)
DOI: 10.1063/1.2799177
See this article

Analysis of electrically biased paramagnetic defect centers in HfO2 and HfxSi1−xO2/(100)Si interfaces

P. T. Chen, B. B. Triplett, J. J. Chambers, et al.
Journal of Applied Physics 104 (1) 014106 (2008)
DOI: 10.1063/1.2948922
See this article

Influence of annealing temperatures on solution-processed AlInZnO thin film transistors

Yana Gao, Jianguo Lu, Jianhua Zhang and Xifeng Li
Journal of Alloys and Compounds 646 675 (2015)
DOI: 10.1016/j.jallcom.2015.06.049
See this article

Heterogate junctionless tunnel field-effect transistor: future of low-power devices

Shiromani Balmukund Rahi, Pranav Asthana and Shoubhik Gupta
Journal of Computational Electronics 16 (1) 30 (2017)
DOI: 10.1007/s10825-016-0936-9
See this article

Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB|MgO interface

Xiang Li, Kevin Fitzell, Di Wu, et al.
Applied Physics Letters 110 (5) 052401 (2017)
DOI: 10.1063/1.4975160
See this article

An Investigation of Electrical and Dielectric Parameters of Sol–Gel Process Enabled $\beta $ -Ga2O3 as a Gate Dielectric Material

Ahmet Kaya, Howard Mao, Jianyi Gao, et al.
IEEE Transactions on Electron Devices 64 (5) 2047 (2017)
DOI: 10.1109/TED.2017.2675990
See this article

Superior NBTI in High- $k$ SiGe Transistors–Part I: Experimental

M. Waltl, G. Rzepa, A. Grill, et al.
IEEE Transactions on Electron Devices 64 (5) 2092 (2017)
DOI: 10.1109/TED.2017.2686086
See this article

Probing nanoscale oxygen ion motion in memristive systems

Yuchao Yang, Xiaoxian Zhang, Liang Qin, et al.
Nature Communications 8 15173 (2017)
DOI: 10.1038/ncomms15173
See this article

Decoupling the Effects of Mass Density and Hydrogen-, Oxygen-, and Aluminum-Based Defects on Optoelectronic Properties of Realistic Amorphous Alumina

Vanessa Riffet and Julien Vidal
The Journal of Physical Chemistry Letters 8 (11) 2469 (2017)
DOI: 10.1021/acs.jpclett.7b00896
See this article

Synaptic transistor with a reversible and analog conductance modulation using a Pt/HfOx/n-IGZO memcapacitor

Paul Yang, Hyung Jun Kim, Hong Zheng, et al.
Nanotechnology 28 (22) 225201 (2017)
DOI: 10.1088/1361-6528/aa6dac
See this article

Real-time atomistic observation of structural phase transformations in individual hafnia nanorods

Bethany M. Hudak, Sean W. Depner, Gregory R. Waetzig, et al.
Nature Communications 8 15316 (2017)
DOI: 10.1038/ncomms15316
See this article

A Suspended Six-Port Transformer-Based Power Divider for 2.4 GHz Applications

Wen-Hui Huang, I-Yu Huang, Wun-Hong Syu, Chia-Lung Sung and Chia-Hsu Hsieh
Micromachines 8 (4) 118 (2017)
DOI: 10.3390/mi8040118
See this article

Effect of high-k dielectric on the performance of Si, InAs and CNT FET

Bhubon Chandra Mech and Jitendra Kumar
Micro & Nano Letters 12 (9) 624 (2017)
DOI: 10.1049/mnl.2017.0088
See this article

Science and technology of diamond films grown on HfO 2 interface layer for transformational technologies

Jesus J. Alcantar-Peña, Geunhee Lee, Erika M.A. Fuentes-Fernandez, et al.
Diamond and Related Materials 69 221 (2016)
DOI: 10.1016/j.diamond.2016.09.010
See this article

Nitrogen plasma-induced HfSiON film growth from Hf nanoscale islands on SiO2/Si

Takeshi Kitajima, Ryosuke Kage and Toshiki Nakano
Journal of Vacuum Science & Technology A 36 (5) 051301 (2018)
DOI: 10.1116/1.5037652
See this article

Structural and band gaps studies of novel Al 2-x Hf x O 3 materials toward MOS applications

Norlida Kamarulzaman, Annie Maria Mahat, Nurhanna Badar and Ce Zhou Zhao
Materials Chemistry and Physics 216 237 (2018)
DOI: 10.1016/j.matchemphys.2018.03.093
See this article

Physical and optical properties of HfO 2 NPs – Synthesis and characterization in finding its feasibility in opto-electronic devices

J. Manikantan, H.B. Ramalingam, B. Chandar Shekar, et al.
Advanced Powder Technology 28 (7) 1636 (2017)
DOI: 10.1016/j.apt.2017.03.022
See this article

Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics

Jian Zhu, Xiaolong Liu, Michael L. Geier, et al.
Advanced Materials 28 (1) 63 (2016)
DOI: 10.1002/adma.201504501
See this article

Memory improvement with high-k buffer layer in metal/ SrBi2Nb2O9/Al2O3/silicon gate stack for non-volatile memory applications

Prashant Singh, Rajesh Kumar Jha, Rajat Kumar Singh and B.R. Singh
Superlattices and Microstructures 121 55 (2018)
DOI: 10.1016/j.spmi.2018.07.028
See this article

Memory performance of MOS structure embedded with laser annealed gold NCs

L. Kastanis, J.L. Spear, Ch. Sargentis, et al.
Solid-State Electronics 148 63 (2018)
DOI: 10.1016/j.sse.2018.07.012
See this article

Physics of Semiconductor Devices

Ekta Goel, Sanjay Kumar, Gopal Rawat, et al.
Environmental Science and Engineering, Physics of Semiconductor Devices 193 (2014)
DOI: 10.1007/978-3-319-03002-9_48
See this article

Physics of Semiconductor Devices

Ashwath Rao, Joyline Dsa, Saurabh Goyal and B. R. Singh
Environmental Science and Engineering, Physics of Semiconductor Devices 555 (2014)
DOI: 10.1007/978-3-319-03002-9_139
See this article

Intrinsic energy conversions for photon-generation in piezo-phototronic materials: A case study on alkaline niobates

Bolong Huang, Mingzi Sun and Dengfeng Peng
Nano Energy 47 150 (2018)
DOI: 10.1016/j.nanoen.2018.02.041
See this article

Dielectric properties and resistive switching characteristics of lead zirconate titanate/hafnia heterostructures

Y. Espinal, S. P. Alpay, M. Howard and B. M. Hanrahan
Journal of Applied Physics 124 (6) 064103 (2018)
DOI: 10.1063/1.5037999
See this article

Structural and electrical properties of Ge-doped ZrO2 thin films grown by atomic layer deposition for high-k dielectrics

Bo-Eun Park, Yujin Lee, Il-Kwon Oh, et al.
Journal of Materials Science 53 (21) 15237 (2018)
DOI: 10.1007/s10853-018-2695-4
See this article

Nanoscale potential fluctuations in nonstoichiometrics tantalum oxide

Vladimir A Gritsenko, Vladimir A Volodin, Timofey V Perevalov, et al.
Nanotechnology 29 (42) 425202 (2018)
DOI: 10.1088/1361-6528/aad430
See this article

Interconnections between Electronic Structure and Optical Properties of Multilayer Nanolaminate TiAlN/Ag and Al2O3/Ag Coatings

Dmitry Wainstein, Anatoly Kovalev, Vladimir Vakhrushev, Raul Gago and Jose Endrino
Coatings 8 (8) 290 (2018)
DOI: 10.3390/coatings8080290
See this article

Atomic Layer Deposition and Characterization of Amorphous ErxTi1-xOyDielectric Ultra-Thin Films

Runshen Xu and Christos G. Takoudis
ECS Journal of Solid State Science and Technology 1 (6) N107 (2012)
DOI: 10.1149/2.013206jss
See this article

Temperature Effects on Nanocrystalline Molybdenum Oxide Embedded ZrHfO High-kNonvolatile Memory Functions

Chi-Chou Lin and Yue Kuo
ECS Journal of Solid State Science and Technology 2 (1) Q16 (2013)
DOI: 10.1149/2.027301jss
See this article

Al2O3/InGaAs Metal-Oxide-Semiconductor Interface Properties: Impact of Gd2O3and Sc2O3Interfacial Layers by Atomic Layer Deposition

M. Ameen, L. Nyns, S. Sioncke, et al.
ECS Journal of Solid State Science and Technology 3 (11) N133 (2014)
DOI: 10.1149/2.0021411jss
See this article

Atomic Layer Etching of HfO2Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)2and HF

Younghee Lee, Jaime W. DuMont and Steven M. George
ECS Journal of Solid State Science and Technology 4 (6) N5013 (2015)
DOI: 10.1149/2.0041506jss
See this article

Synthesis and Ionic Conductivity Studies of In- and Y-Doped Li6Hf2O7as Solid-State Electrolyte for All-Solid State Li-Ion Batteries

M. Amores, S. A. Corr and E. J. Cussen
Journal of The Electrochemical Society 164 (1) A6395 (2017)
DOI: 10.1149/2.06011701jes
See this article

Cross-Point Resistive Switching Memory and Urea Sensing by Using Annealed GdOxFilm in IrOx/GdOx/W Structure for Biomedical Applications

Pankaj Kumar, Siddheswar Maikap, Sreekanth Ginnaram, et al.
Journal of The Electrochemical Society 164 (4) B127 (2017)
DOI: 10.1149/2.1011704jes
See this article

High dielectric permittivity of HfO2-based films with (La,Bi,Nb) substitution

Shingo Yoneda, Tadasu Hosokura, Tomoyasu Usui, et al.
Japanese Journal of Applied Physics 57 (11S) 11UF03 (2018)
DOI: 10.7567/JJAP.57.11UF03
See this article

Structural characteristics of samarium oxynitride on silicon substrate

Kian Heng Goh, A.S.M.A. Haseeb and Yew Hoong Wong
Journal of Alloys and Compounds 722 729 (2017)
DOI: 10.1016/j.jallcom.2017.06.179
See this article

Comparison of resistive switching characteristics by using e-gun/sputter deposited SiOx film in W/SiOx/TiN structure and pH/creatinine sensing through iridium electrode

Sourav Roy, Anisha Roy, Rajeswar Panja, et al.
Journal of Alloys and Compounds 726 30 (2017)
DOI: 10.1016/j.jallcom.2017.07.304
See this article

Role of thermodynamic miscibility gaps in phase selection in sol-gel synthesis of yttrium silicates

Surendra B. Anantharaman, V.B. Rajkumar, S. Raghunandan, et al.
Journal of the European Ceramic Society 37 (15) 5001 (2017)
DOI: 10.1016/j.jeurceramsoc.2017.06.040
See this article

Investigation of CHF3 treatment on the energy band at the MoS2/HfZrO4 heterostructure

Kuilong Li, Zhiwen Li, Yuehua Hong, et al.
Applied Physics Letters 113 (14) 143506 (2018)
DOI: 10.1063/1.5054137
See this article

Electronic transport properties of graphene/Al2O3 (0001) interface

M.S. Gusmão, Angsula Ghosh and H.O. Frota
Current Applied Physics 18 (1) 90 (2018)
DOI: 10.1016/j.cap.2017.10.008
See this article

Structural and electrical properties of ferroelectric BiFeO3/HfO2 gate stack for nonvolatile memory applications

Nitish Yadav, Kamal Prakash Pandey and Pramod Narayan Tripathi
Journal of Advanced Dielectrics 08 (05) 1850037 (2018)
DOI: 10.1142/S2010135X18500376
See this article

New Uses of Micro and Nanomaterials

Cynthia P. Quinteros, Alex Hardtdegen, Mariano Barella, et al.
New Uses of Micro and Nanomaterials (2018)
DOI: 10.5772/intechopen.78937
See this article

Error analysis and frequency selection guidelines for three-frequency correction in MOS capacitors

Xizhen Zhang, Sujuan Zhang, Xiuyu Pan, et al.
Semiconductor Science and Technology 33 (11) 115006 (2018)
DOI: 10.1088/1361-6641/aae17f
See this article

Electrochemical behavior of a gold nanoring electrode microfabricated on a silicon micropillar

Haocheng Yin, Chao Tan, Shabnam Siddiqui and Prabhu U. Arumugam
Sensors and Actuators B: Chemical 281 392 (2019)
DOI: 10.1016/j.snb.2018.10.097
See this article

Phase stability, microstructure, and dielectric properties of quaternary oxides In12 Ti10 A2 BO42 (A: Ga or Al; B: Mg or Zn)

Felipe Francisco Castillón-Barraza, Alejandro Durán, Mario Humberto Farías, et al.
Journal of the American Ceramic Society 102 (1) 320 (2019)
DOI: 10.1111/jace.15920
See this article

Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique

Vladimir Kolkovsky, Sebastian Scholz, Valery Kolkovsky, Jan-Uwe Schmidt and Rene Heller
Journal of Vacuum Science & Technology B 36 (6) 062901 (2018)
DOI: 10.1116/1.5045634
See this article

Single- and double-gate synaptic transistor with TaO x gate insulator and IGZO channel layer

Keonwon Beom, Paul Yang, Daehoon Park, et al.
Nanotechnology 30 (2) 025203 (2019)
DOI: 10.1088/1361-6528/aae8d2
See this article

Capacitive effective thickness of a few nanometers by atomic layer deposition and device performance in Ge gate-all-around fin field effect transistors

Chu-Lin Chu, Bo-Yuan Chen and Yiin-Kuen Fuh
Journal of Micro/Nanolithography, MEMS, and MOEMS 14 (4) 044501 (2015)
DOI: 10.1117/1.JMM.14.4.044501
See this article

Charge Trapping in Hafnium Silicate Films with Modulated Composition and Enhanced Permittivity

Larysa Khomenkova, Xavier Portier, Abdelilah Slaoui and Fabrice Gourbilleau
Advanced Materials Research 854 125 (2013)
DOI: 10.4028/www.scientific.net/AMR.854.125
See this article

High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2

Xiang Yu Yang, Bong Mook Lee and Veena Misra
Materials Science Forum 778-780 557 (2014)
DOI: 10.4028/www.scientific.net/MSF.778-780.557
See this article

Post-Deposition Annealing in Nitrous Oxide Ambient of RF-Magnetron Sputtered Y2O3 Film on Silicon Substrate

Hock Jin Quah and Kuan Yew Cheong
Advanced Materials Research 1024 360 (2014)
DOI: 10.4028/www.scientific.net/AMR.1024.360
See this article

Metamaterial anti-reflection lining for enhancing transmission of high-permittivity plate

Yongzhi Li, Jiafu Wang, Jie Yang, et al.
Journal of Physics D: Applied Physics 52 (3) 03LT01 (2019)
DOI: 10.1088/1361-6463/aaeab7
See this article

Electrostatic Supercapacitors by Atomic Layer Deposition on Nanoporous Anodic Alumina Templates for Environmentally Sustainable Energy Storage

Luis Fernández-Menéndez, Ana González, Víctor Vega and Víctor de la Prida
Coatings 8 (11) 403 (2018)
DOI: 10.3390/coatings8110403
See this article

Synthesis of Phosphonic Acid Ligands for Nanocrystal Surface Functionalization and Solution Processed Memristors

Jonathan De Roo, Zimu Zhou, Jiaying Wang, et al.
Chemistry of Materials 30 (21) 8034 (2018)
DOI: 10.1021/acs.chemmater.8b03768
See this article

Titanium coverage for plasma-induced uniform HfSiON film from Hf nanoscale islands on SiO2/Si

Takeshi Kitajima, Ryosuke Kage and Toshiki Nakano
Journal of Vacuum Science & Technology A 36 (6) 061304 (2018)
DOI: 10.1116/1.5053164
See this article

Effect of the interfacial (low-k SiO2 vs high-k Al2O3) dielectrics on the electrical performance of a-ITZO TFT

Taki Eddine Taouririt, Afak Meftah and Nouredine Sengouga
Applied Nanoscience 8 (8) 1865 (2018)
DOI: 10.1007/s13204-018-0866-x
See this article

Charge transport properties of bulk-heterojunction organic solar cells investigated by displacement current measurement technique

Teng Ma, Jinyu Zhang, Daisuke Tadaki, et al.
Organic Electronics 51 269 (2017)
DOI: 10.1016/j.orgel.2017.09.020
See this article

Charge stability diagram and addition energy spectrum for single-electron transistor based on Ni-dithiolene derivatives

Anu, Anurag Srivastava and Mohd. Shahid Khan
Organic Electronics 59 125 (2018)
DOI: 10.1016/j.orgel.2018.05.003
See this article

Film materials based on a-SiNx:H with high refractive index obtained by plasma enhanced chemical vapour deposition technology

J. Jaglarz, M. Jurzecka-Szymacha and S. Kluska
Thin Solid Films 669 564 (2019)
DOI: 10.1016/j.tsf.2018.11.050
See this article

Numerical Simulation and Optimization of An a-ITZO TFT Based on a Bi-Layer Gate Dielectrics

Taki Eddine Taouririt, Afak Meftah and Nouredine Sengouga
Journal of Electronic Materials 48 (2) 1018 (2019)
DOI: 10.1007/s11664-018-6817-1
See this article

Influence of 120 MeV S9+ ion irradiation on structural, optical and morphological properties of zirconium oxide thin films deposited by RF sputtering

Vishnu Chauhan, T. Gupta, Paramjit Singh, et al.
Physics Letters A 383 (9) 898 (2019)
DOI: 10.1016/j.physleta.2018.12.013
See this article

Reliability issue related to dielectric charging in capacitive micromachined ultrasonic transducers: A review

Junaid Munir, Quratul Ain and Hyunjoo Jenny Lee
Microelectronics Reliability 92 155 (2019)
DOI: 10.1016/j.microrel.2018.12.005
See this article

Future of dynamic random-access memory as main memory

Seong Keun Kim and Mihaela Popovici
MRS Bulletin 43 (5) 334 (2018)
DOI: 10.1557/mrs.2018.95
See this article

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Thomas Mikolajick, Stefan Slesazeck, Min Hyuk Park and Uwe Schroeder
MRS Bulletin 43 (5) 340 (2018)
DOI: 10.1557/mrs.2018.92
See this article

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V. Stoichkov, T.K.N. Sweet, N. Jenkins and J. Kettle
Solar Energy Materials and Solar Cells 191 356 (2019)
DOI: 10.1016/j.solmat.2018.11.040
See this article

Electrical and Optical Properties of Plasma-Sprayed Yttria

Jiri Kotlan, Ramachandran Chidambaram Seshadri and Pavel Ctibor
Metallurgical and Materials Transactions A 50 (1) 504 (2019)
DOI: 10.1007/s11661-018-4994-4
See this article

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Kumari Sushmita, Aishwarya V. Menon, Shubham Sharma, et al.
The Journal of Physical Chemistry C 123 (4) 2579 (2019)
DOI: 10.1021/acs.jpcc.8b10999
See this article

Voltage-adjustable terahertz hyperbolic metamaterial based on graphene and doped silicon

H. T. Yan, W. Feng, Zheng Liu and J. C. Cao
AIP Advances 9 (1) 015108 (2019)
DOI: 10.1063/1.5063309
See this article

Characterisation of alumina–silica films deposited by ALD

K. E. Prince, P. J. Evans, G. Triani, Z. Zhang and J. Bartlett
Surface and Interface Analysis 38 (12-13) 1692 (2006)
DOI: 10.1002/sia.2422
See this article

Analysis of the (100)Si/LaAlO3 structure by electron spin resonance: nature of the interface

K. Clémer, A. Stesmans, V. V. Afanas’ev, L. F. Edge and D. G. Schlom
Journal of Materials Science: Materials in Electronics 18 (7) 735 (2007)
DOI: 10.1007/s10854-006-9072-9
See this article

Ultralow-power organic complementary circuits

Hagen Klauk, Ute Zschieschang, Jens Pflaum and Marcus Halik
Nature 445 (7129) 745 (2007)
DOI: 10.1038/nature05533
See this article

Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si

Yew Hoong Wong and Kuan Yew Cheong
Nanoscale Research Letters 6 (1) 489 (2011)
DOI: 10.1186/1556-276X-6-489
See this article

Interfacial Reaction and Electrical Properties of HfO2 Film Gate Dielectric Prepared by Pulsed Laser Deposition in Nitrogen: Role of Rapid Thermal Annealing and Gate Electrode

Yi Wang, Hao Wang, Cong Ye, et al.
ACS Applied Materials & Interfaces 3 (10) 3813 (2011)
DOI: 10.1021/am2008695
See this article

Structure, Sodium Ion Role, and Practical Issues for β-alumina as a High-k Solution-Processed Gate Layer for Transparent and Low-Voltage Electronics

Bo Zhang, Yu Liu, Shweta Agarwal, Ming-Ling Yeh and Howard E. Katz
ACS Applied Materials & Interfaces 3 (11) 4254 (2011)
DOI: 10.1021/am2009103
See this article

The Physics of Semiconductor Devices

Prashant Singh, Rajesh Kumar Jha, Rajat Kumar Singh and B. R. Singh
Springer Proceedings in Physics, The Physics of Semiconductor Devices 215 517 (2019)
DOI: 10.1007/978-3-319-97604-4_80
See this article

Defects in High-k Gate Dielectric Stacks

T.V. PEREVALOV, A.V. SHAPOSHNIKOV, K.A. NASYROV, et al.
NATO Science Series II: Mathematics, Physics and Chemistry, Defects in High-k Gate Dielectric Stacks 220 423 (2006)
DOI: 10.1007/1-4020-4367-8_34
See this article

Defects in High-k Gate Dielectric Stacks

J. ROBERTSON, K. XIONG, S.J. CLARK and S.J. CLARK
NATO Science Series II: Mathematics, Physics and Chemistry, Defects in High-k Gate Dielectric Stacks 220 175 (2006)
DOI: 10.1007/1-4020-4367-8_14
See this article

Plasma assisted oxidative coupling of methane (OCM) over Ag/SiO2 and subsequent regeneration at low temperature

Heesoo Lee, Dae-Hoon Lee, Jeong Myeong Ha and Do Heui Kim
Applied Catalysis A: General 557 39 (2018)
DOI: 10.1016/j.apcata.2018.03.007
See this article

Nanoscale High-k Dielectrics for Junctionless Nanowire Transistor for Drain Current Analysis

J. Charles Pravin, P. Prajoon, Flavia Princess Nesamania, et al.
Journal of Electronic Materials 47 (5) 2679 (2018)
DOI: 10.1007/s11664-018-6075-2
See this article

Impact of annealing on the current conduction and trap properties of CeO2/La2O3 metal-insulator-metal capacitors

Isabella Rossetto, Rossella Piagge, Fabrizio Toia, et al.
Journal of Vacuum Science & Technology B 37 (2) 021205 (2019)
DOI: 10.1116/1.5060712
See this article

Rare Earth Oxide Thin Films

Sabina Spiga, Claudia Wiemer, Giovanna Scarel, Omar Costa and Marco Fanciulli
Topics in Applied Physics, Rare Earth Oxide Thin Films 106 203 (2006)
DOI: 10.1007/11499893_13
See this article

Rare Earth Oxide Thin Films

Gabriele Seguini, Michele Perego and Marco Fanciulli
Topics in Applied Physics, Rare Earth Oxide Thin Films 106 269 (2006)
DOI: 10.1007/11499893_16
See this article

A General Method for the Anodic Formation of Crystalline Metal Oxide Nanotube Arrays without the Use of Thermal Annealing

Nageh K. Allam, Karthik Shankar and Craig A. Grimes
Advanced Materials 20 (20) 3942 (2008)
DOI: 10.1002/adma.200800815
See this article

Optical properties of multilayer structures

M. S. Lebedev, B. M. Ayupov and T. P. Smirnova
Optics and Spectroscopy 106 (1) 139 (2009)
DOI: 10.1134/S0030400X09010184
See this article