The Citing articles tool gives a list of articles citing the current article. The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program . You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
E. Leoni , S. Binetti , B. Pichaud , S. Pizzini
Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 123-127
Published online: 2004-07-15
This article has been cited by the following article(s):
20 articles
On the nature of striations in n-type silicon solar cells
Alessia Le Donne, Simona Binetti, Valerio Folegatti and Gianluca Coletti Applied Physics Letters 109 (3) (2016) https://doi.org/10.1063/1.4959558
Structural change of alkali feldspar by ball milling
Hiromi NOJIRI, Masayuki OKUNO, Hiroki OKUDERA, Tomoyuki MIZUKAMI and Shoji ARAI Journal of Mineralogical and Petrological Sciences 108 (5) 267 (2013) https://doi.org/10.2465/jmps.121122
Sergio Pizzini 1 (2012) https://doi.org/10.1002/9781118312193.ch1
Luminescence at 1.5 µm from Si/GeSn nanodot/Si structures
Yoshiaki Nakamura, Norihito Fujinoki and Masakazu Ichikawa Journal of Physics D: Applied Physics 45 (3) 035304 (2012) https://doi.org/10.1088/0022-3727/45/3/035304
Michael Seibt and Vitaly Kveder 127 (2012) https://doi.org/10.1002/9781118312193.ch4
Defect-related light emission in the 1.4–1.7 μm range from Si layers at room temperature
A. A. Shklyaev, Y. Nakamura, F. N. Dultsev and M. Ichikawa Journal of Applied Physics 105 (6) (2009) https://doi.org/10.1063/1.3095670
Photoluminescence from Si-capped GeSn nanodots on Si substrates formed using an ultrathin SiO2 film technique
Yoshiaki Nakamura, Norihiko Fujinoki and Masakazu Ichikawa Journal of Applied Physics 106 (1) (2009) https://doi.org/10.1063/1.3159902
IR luminescence in thermally treated silicon
V. V. Bolotov and V. E. Kang Semiconductors 43 (1) 26 (2009) https://doi.org/10.1134/S1063782609010060
The photoluminescence of the thermo-treated silicon
Valeriy V. Bolotov and Vasiliy E. Kan Physica B: Condensed Matter 404 (23-24) 4555 (2009) https://doi.org/10.1016/j.physb.2009.08.103
Interaction between oxygen and dislocations in p-type silicon
D. Cavalcoli, A. Castaldini and A. Cavallini Applied Physics A 90 (4) 619 (2008) https://doi.org/10.1007/s00339-007-4377-y
Предельно плотные массивы наноструктур германия и кремния
А.А. Шкляев and М. Ичикава Uspekhi Fizicheskih Nauk 178 (2) 139 (2008) https://doi.org/10.3367/UFNr.0178.200802b.0139
Influence of growth and annealing conditions on photoluminescence of Ge/Si layers grown on oxidized Si surfaces
A A Shklyaev, S-P Cho, Y Nakamura, N Tanaka and M Ichikawa Journal of Physics: Condensed Matter 19 (13) 136004 (2007) https://doi.org/10.1088/0953-8984/19/13/136004
Electronic states related to dislocations in silicon
D. Cavalcoli and A. Cavallini physica status solidi c 4 (8) 2871 (2007) https://doi.org/10.1002/pssc.200675431
Regular Dislocation Networks in Si. Part II: Luminescence
Teimuraz Mchedlidze, T. Wilhelm, X. Yu, et al. Solid State Phenomena 131-133 503 (2007) https://doi.org/10.4028/www.scientific.net/SSP.131-133.503
Photoluminescence of Si layers grown on oxidized Si surfaces
A. A. Shklyaev, Y. Nakamura and M. Ichikawa Journal of Applied Physics 101 (3) (2007) https://doi.org/10.1063/1.2435063
Optical properties of shuffle dislocations in silicon
S. Pizzini, S. Binetti, A. Le Donne, A. Marzegalli and J. Rabier Applied Physics Letters 88 (21) (2006) https://doi.org/10.1063/1.2206874
On the Interaction of Dislocations with Impurities in Silicon
Daniela Cavalcoli and Anna Cavallini Defect and Diffusion Forum 245-246 15 (2005) https://doi.org/10.4028/www.scientific.net/DDF.245-246.15
Electronic transitions at defect states in Cz p-type silicon
A. Castaldini, D. Cavalcoli, A. Cavallini, S. Binetti and S. Pizzini Applied Physics Letters 86 (16) 162109 (2005) https://doi.org/10.1063/1.1881788
Defect states in Czochalski p‐type silicon: the role of oxygen and dislocations
A. Castaldini, D. Cavalcoli, A. Cavallini and S. Pizzini physica status solidi (a) 202 (5) 889 (2005) https://doi.org/10.1002/pssa.200460510
Experimental Evidence of Dislocation Related Shallow States inp-Type Si
A. Castaldini, D. Cavalcoli, A. Cavallini and S. Pizzini Physical Review Letters 95 (7) (2005) https://doi.org/10.1103/PhysRevLett.95.076401