Articles citing this article

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Cited article:

Raman scattering characterization of residual strain and alloy composition in bulk Si_1−xGe_x crystal

M. R. Islam, M. Yamada, N. V. Abrosimov, M. Kiyama, M. Tatsumi

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 325-328

Published online: 2004-07-15

DOI: https://doi.org/10.1051/epjap:2004124

This article has been cited by the following article(s):

Low temperature epitaxial growth of SiGe absorber for thin film heterojunction solar cells

R. Cariou, J. Tang, N. Ramay, R. Ruggeri and P. Roca i Cabarrocas
Solar Energy Materials and Solar Cells 134 15 (2015)
DOI: 10.1016/j.solmat.2014.11.018
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Raman scattering study on Ga1-xMnxAs prepared by Mn ions implantation, deposition and post-annealing

M. R. Islam, N. F. Chen and M. Yamada
Crystal Research and Technology 44 (2) 215 (2009)
DOI: 10.1002/crat.200800215
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Raman scattering characterization of Ge-composition in bulk Si1−x Ge x with compositional variation

M. R. Islam and M. Yamada
Journal of Materials Science: Materials in Electronics 19 (S1) 294 (2008)
DOI: 10.1007/s10854-007-9514-z
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Spectroscopic investigation of strain induced by compositional variation in bulk InxGa1–xAs crystal grown by MCZM method

M. S. Rahman, M. R. Islam and M. Yamada
Crystal Research and Technology 41 (4) 358 (2006)
DOI: 10.1002/crat.200510999
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