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Cited article:

Pyramidal defects in highly Mg-doped GaN: atomic structure and influence on optoelectronic properties

M. Leroux, P. Vennéguès, S. Dalmasso, P. de Mierry, P. Lorenzini, B. Damilano, B. Beaumont, P. Gibart, J. Massies

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 259-262

Published online: 2004-07-15

DOI: https://doi.org/10.1051/epjap:2004119-2

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