Articles citing this article

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Cited article:

Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: A comprehensive review

V. Sandeep, J. Charles Pravin and S. Ashok Kumar
Microelectronics Reliability 159 115445 (2024)
https://doi.org/10.1016/j.microrel.2024.115445

Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects

Pradip Dalapati, Abdulaziz Almalki, Sultan Alhassan, Saud Alotaibi, Maryam Al Huwayz, Taiki Nakabayashi, Takashi Egawa, Makoto Miyoshi and Mohamed Henini
Sensors and Actuators A: Physical 347 113935 (2022)
https://doi.org/10.1016/j.sna.2022.113935