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Cited article:

Study of carrier concentration profiles in Al‐implanted Ge by micro‐Raman spectroscopy under different excitation wavelengths

A. Sanson, M. Giarola, E. Napolitani, G. Impellizzeri, V. Privitera, A. Carnera and G. Mariotto
Journal of Raman Spectroscopy 44 (5) 665 (2013)

Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy

Guangchen Zhang, Shiwei Feng, Jingwan Li, Yan Zhao and Chunsheng Guo
Journal of Semiconductors 33 (4) 044003 (2012)

Direct optical measurement of hot‐phonons in active AlGaN/GaN devices

J. W. Pomeroy, M. Kuball, M. J. Uren and T. Martin
physica status solidi (b) 245 (5) 910 (2008)

Ultra-High Resolution Imaging by Fluorescence Photoactivation Localization Microscopy

Samuel T. Hess, Thanu P.K. Girirajan and Michael D. Mason
Biophysical Journal 91 (11) 4258 (2006)