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The role of point defects in strain relaxation in epitaxially grown SiGe structures

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Characterisation of virtual substrates with ultra-thin Si0.6Ge0.4 strain relaxed buffers

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DOI: 10.1016/j.mssp.2004.09.067
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Composition and strain in thin Si1−xGex virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction

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Journal of Applied Physics 109 (3) 033502 (2011)
DOI: 10.1063/1.3536508
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