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Cited article:

Electron beam energy and Ge nanocrystal size effects on the minority carrier diffusion length measured by the nano-electron beam induced current technique

Quang-Tri Doan, Abdelillah El Hdiy and Michel Troyon
Journal of Applied Physics 110 (2) (2011)
https://doi.org/10.1063/1.3614527

XPS, electric and photoluminescence-based analysis of the GaAs (100) nitridation

Z. Benamara, N. Mecirdi, B. Bachir Bouiadjra, et al.
Applied Surface Science 252 (22) 7890 (2006)
https://doi.org/10.1016/j.apsusc.2005.09.056

Electron beam-induced current investigation of GaN Schottky diode

A. Matoussi, T. Boufaden, S. Guermazi, et al.
Journal of Electronic Materials 34 (7) 1059 (2005)
https://doi.org/10.1007/s11664-005-0096-3

Minority carrier diffusion lengths and optical self‐absorption coefficient in undoped GaN

A. Matoussi, T. Boufaden, S. Guermazi, B. Eljani, Y. Mlik and A. Toureille
physica status solidi (b) 240 (1) 160 (2003)
https://doi.org/10.1002/pssb.200301870