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Optimized attenuated total reflection configuration for free carrier induced optical nonlinearities in n-GaAs

G Shkerdin, J Stiens and R Vounckx
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X-valley influence on hot free electron absorption and optical nonlinearities at 10.6 µm in highly doped n-GaAs

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The European Physical Journal Applied Physics 19 (1) 29 (2002)
DOI: 10.1051/epjap:2002046
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Free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong phonon–plasmon coupling regime

G Shkerdin, S Rabbaa, J Stiens and R Vounckx
Journal of Physics D: Applied Physics 45 (49) 495103 (2012)
DOI: 10.1088/0022-3727/45/49/495103
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Nonlinear and bistable reflection minima at λ = 106 μm in an attenuated total reflection configuration with a highly doped n-GaAs Film

Gennady Shkerdin, Johan Stiens and Roger Vounckx
Applied Optics 42 (6) 1132 (2003)
DOI: 10.1364/AO.42.001132
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Normal incidence infrared modulator based on single quantum well intersubband transitions

W Vandermeiren, J Stiens, G Shkerdin, C De Tandt and R Vounckx
Journal of Physics D: Applied Physics 47 (2) 025104 (2014)
DOI: 10.1088/0022-3727/47/2/025104
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Influence of electron scattering on phonon-plasmon coupled modes dispersion and free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths

Gennady Shkerdin, Sulaiman Rabbaa, Johan Stiens and Roger Vounckx
physica status solidi (b) 251 (4) 882 (2014)
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Calculated temperature rise in midinfrared laser irradiated Hg0.72Cd0.28Te

Asta Katrine Storeboe, Trond Brudevoll and Knut Stenersen
Journal of Applied Physics 103 (5) 053108 (2008)
DOI: 10.1063/1.2890751
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Influence of leaky waves on free-electron-induced nonlinear reflection properties of highly doped n-GaAs layer at medium IR-wavelengths

G Shkerdin, J Stiens and R Vounckx
Journal of Optics A: Pure and Applied Optics 3 (6) 493 (2001)
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Optical modulation by surface states

Elham Darabi, Sina Khorasani and Bizhan Rashidian
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The relationship between reflectivity minima and eigenmodes in multi-layer structures

G Shkerdin, J Stiens and R Vounckx
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