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Grown-in beryllium diffusion in indium gallium arsenide: An ab initio , continuum theory and kinetic Monte Carlo study

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DOI: 10.1016/j.actamat.2016.12.004
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The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE under nonequilibrium conditions

M. Ketata, K. Ketata, S. Koumetz, J. Marcon and C. Dubois
The European Physical Journal Applied Physics 8 (1) 19 (1999)
DOI: 10.1051/epjap:1999224
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A Model for Estimating Chemical Potentials in Ternary Semiconductor Compounds: the Case of InGaAs

Vadym Kulish, Wenyan Liu and Sergei Manzhos
MRS Advances 1 (2017)
DOI: 10.1557/adv.2017.356
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