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Thickness-dependent physical and nanomechanical properties of AlxGa1−xN thin films

N. Boughrara, Z. Benzarti, A. Khalfallah, J.C. Oliveira, M. Evaristo and A. Cavaleiro
Materials Science in Semiconductor Processing 151 107023 (2022)
DOI: 10.1016/j.mssp.2022.107023
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Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

M. Matys, R. Stoklas, M. Blaho and B. Adamowicz
Applied Physics Letters 110 (24) 243505 (2017)
DOI: 10.1063/1.4986482
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