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Ti-Doped GaOx Resistive Switching Memory with Self-Rectifying Behavior by Using NbOx/Pt Bilayers

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Electrical conduction of Ti/TiOx/Ti structures at low temperatures and high magnetic fields

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Rectifying characteristics and bipolar resistance switching behaviors in sol–gel processed TiOx thin film

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Japanese Journal of Applied Physics 54 (4S) 04DD06 (2015)
DOI: 10.7567/JJAP.54.04DD06
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Fabrication of resistive switching memory based on solution processed PMMA-HfOxblended thin films

Jae-Won Lee and Won-Ju Cho
Semiconductor Science and Technology 32 (2) 025009 (2017)
DOI: 10.1088/1361-6641/aa5133
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