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Cited article:

Effect of Ar annealing temperature on SiO₂/SiC:SiO₂ densification change causing leakage current reduction

Zhi Qin Zhong, Zi Jiao Sun, Shu Ya Wang, Li Ping Dai, Guo Jun Zhang

Eur. Phys. J. Appl. Phys., 62 2 (2013) 20301

Published online: 2013-04-30

DOI: https://doi.org/10.1051/epjap/2013120491

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Enhancement of Dielectric Properties of Nanoscale HfO2 Thin Films Via Atomic Layer Bombardment

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Effect of Ar Annealing Temperature on SiO₂/SiC: Carbon-Related Clusters Reduction Causing Interfacial Quality Improvement

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