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Cited article:

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ACS Applied Electronic Materials 2 (8) 2440 (2020)
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SiC Nitridation by NH3 Annealing and Its Effects in MOS Capacitors with Deposited SiO2 Films

E. Pitthan, A.L. Gobbi, H.I. Boudinov and F.C. Stedile
Journal of Electronic Materials 44 (8) 2823 (2015)
https://doi.org/10.1007/s11664-015-3757-x

Effect of Ar Annealing Temperature on SiO2/SiC: Carbon-Related Clusters Reduction Causing Interfacial Quality Improvement

Zhi Qin Zhong, Lu Da Zheng, Guo Jun Zhang, et al.
Advanced Materials Research 997 484 (2014)
https://doi.org/10.4028/www.scientific.net/AMR.997.484