Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates
Eur. Phys. J. Appl. Phys., 55 3 (2011) 30102
Published online: 2011-08-18
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Energy Relaxation Rates in AlInN/AlN/GaN Heterostructures
E. Tiras, S. Ardali, E. Arslan and E. OzbayJournal of Electronic Materials 41 (9) 2350 (2012)
DOI: 10.1007/s11664-012-2158-7
See this article
Springer Handbook of Electronic and Photonic Materials
Stephen K. O’Leary, Poppy Siddiqua, Walid A. Hadi, et al.Springer Handbooks, Springer Handbook of Electronic and Photonic Materials 1 (2017)
DOI: 10.1007/978-3-319-48933-9_32
See this article
Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride
Poppy Siddiqua and Stephen K. O’LearyJournal of Materials Science: Materials in Electronics 29 (5) 3511 (2018)
DOI: 10.1007/s10854-017-8324-1
See this article
A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review
Poppy Siddiqua, Walid A. Hadi, Michael S. Shur and Stephen K. O’LearyJournal of Materials Science: Materials in Electronics 26 (7) 4475 (2015)
DOI: 10.1007/s10854-015-3055-7
See this article
Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
Engin Tiras, Ozlem Celik, Selman Mutlu, et al.Superlattices and Microstructures 51 (6) 733 (2012)
DOI: 10.1016/j.spmi.2012.03.029
See this article
Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation
G. Atmaca, S. Ardali, P. Narin, et al.Journal of Alloys and Compounds 659 90 (2016)
DOI: 10.1016/j.jallcom.2015.11.056
See this article
Steady-state and transient electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide: an updated and critical review
Walid A. Hadi, Michael S. Shur and Stephen K. O’LearyJournal of Materials Science: Materials in Electronics 25 (11) 4675 (2014)
DOI: 10.1007/s10854-014-2226-2
See this article
1 (2015)
DOI: 10.1109/CLEOPR.2015.7376169
See this article