Articles citing this article

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Cited article:

The conduction band alignment of HfO₂ caused by oxygen vacancies and its effects on the gate leakage current in MOS structures

L. F. Mao, Z. O. Wang, J. Y. Wang, C. Y. Zhu

Eur. Phys. J. Appl. Phys., 40 1 (2007) 59-63

Published online: 2007-08-31

DOI: https://doi.org/10.1051/epjap:2007129

This article has been cited by the following article(s):

a-InGaZnO Thin-Film Transistors With Novel Atomic Layer-Deposited HfO2 Gate Insulator Using Two Types of Reactant Gases

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IEEE Transactions on Electron Devices 70 (1) 127 (2023)
https://doi.org/10.1109/TED.2022.3223322

Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

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Dynamic observation of oxygen vacancies in hafnia layer by in situ transmission electron microscopy

Chao Li, Yuan Yao, Xi Shen, et al.
Nano Research 8 (11) 3571 (2015)
https://doi.org/10.1007/s12274-015-0857-0

Y. Z. Li, L. J. Zhang, Z. O. Wang, Z. Chen, Y. Q. Li, Z. H. Lu and L. F. Mao
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Influences of bottom electrode TaN on electrical characteristics for metal–HfO2–metal capacitors

Tsung-Kuei Kang, Chia-Tung Chang, Cheng-Li Lin and Wen-Fa Wu
Microelectronic Engineering 86 (10) 1994 (2009)
https://doi.org/10.1016/j.mee.2009.01.015

Study of the Effects of the Antisite Related Defects in Silicon Dioxide of Metal-Oxide-Semiconductor Structure on the Gate Leakage Current

Ling-Feng Mao, Zi-Ou Wang, Ming-Zhen Xu and Chang-Hua Tan
JSTS:Journal of Semiconductor Technology and Science 8 (2) 164 (2008)
https://doi.org/10.5573/JSTS.2008.8.2.164