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Cited article:

Reactive etching of SiC by energetic CF₃: molecular dynamics simulation

F. Gou, Z. Chen, C. Zhiqian

Eur. Phys. J. Appl. Phys., 38 2 (2007) 129-134

Published online: 2007-03-21

DOI: https://doi.org/10.1051/epjap:2007058

This article has been cited by the following article(s):

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Substrate temperature effect on F+ etching of SiC: Molecular dynamics simulation

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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267 (18) 3235 (2009)
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Molecular dynamics simulations of CF3 etching of SiC

F. Gou, L.T. Zen and Chuanliang Meng
Thin Solid Films 516 (8) 1832 (2008)
https://doi.org/10.1016/j.tsf.2007.08.077

The application of molecular dynamics to the study of plasma–surface interactions: CFxwith silicon

F. Gou, A. W. Kleyn and M. A. Gleeson
International Reviews in Physical Chemistry 27 (2) 229 (2008)
https://doi.org/10.1080/01442350801928014