Grown-in vacancy-type defects in poly- and single crystalline silicon investigated by positron annihilation
Eur. Phys. J. Appl. Phys., 37 2 (2007) 213-218
Published online: 2007-01-24
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
本征点缺陷对硅材料响应特性的影响分析
吕彤 Tong Lü and 张蓉竹 Zhang RongzhuActa Optica Sinica 43 (21) 2116002 (2023)
https://doi.org/10.3788/AOS230916
https://doi.org/10.1002/9781118514610.ch2
Integrated atomistic modelling of interstitial defect growth in silicon
Sangheon Lee, Robert J. Bondi and Gyeong S. HwangMolecular Simulation 35 (10-11) 867 (2009)
https://doi.org/10.1080/08927020902929802
Observation of vacancy defects at silicon grain boundaries formed via suppressed solid phase epitaxy
K J Dudeck, W D Walters, A P Knights and P G ColemanJournal of Physics D: Applied Physics 41 (5) 055102 (2008)
https://doi.org/10.1088/0022-3727/41/5/055102
Theoretical determination of stable fourfold coordinated vacancy clusters in silicon
Sangheon Lee and Gyeong S. HwangPhysical Review B 78 (12) (2008)
https://doi.org/10.1103/PhysRevB.78.125310
Modification of silicon waveguide structures using ion implantation induced defects
A.P. Knights, K.J. Dudeck, W.D. Walters and P.G. ColemanApplied Surface Science 255 (1) 75 (2008)
https://doi.org/10.1016/j.apsusc.2008.05.167