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Cited article:

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Solution processed white light photodetector based N, N′-di (2-ethylhexyl)-3,4,9,10-perylene diimide thin film phototransistor

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Frequency dependent interface state properties of a Schottky device based on perylene-monoimide deposited on n-type silicon by spin coating technique

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A detailed analysis of current-voltage characteristics of Au/perylene-monoimide/n-Si Schottky barrier diodes over a wide temperature range

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Electrochemical and optical properties of novel donor‐acceptor thiophene‐perylene‐thiophene polymers

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