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This article has been cited by the following article(s):
Real-time monitoring of atomic layer etching in Cl2/Ar pulsed gas, pulsed power plasmas by optical emission spectroscopy
Qinzhen Hao, Pilbum Kim, Sang Ki Nam, Song-Yun Kang and Vincent M. Donnelly Journal of Vacuum Science & Technology A 41(3) (2023) https://doi.org/10.1116/6.0002482
An Analysis of Low Frequency Discharge in a CH3SiCl3-Ar-H2 Mixture by Optical Emission Spectroscopy and Actinometry
Investigation of InP etching mechanisms in a Cl2/H2 inductively coupled plasma by optical emission spectroscopy
L. Gatilova, S. Bouchoule, S. Guilet and P. Chabert Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 27(2) 262 (2009) https://doi.org/10.1116/1.3071950
The application of molecular dynamics to the study of plasma–surface interactions: CFxwith silicon
Absolute intensity calibration of emission spectra: application to the forbidden 346 nm nitrogen line for N(2P°) metastable atoms density measurement in flowing afterglow
Tungsten metal gate etching in Cl2∕O2 inductively coupled high density plasmas
T. Morel, S. Bamola, R. Ramos, A. Beaurain, E. Pargon and O. Joubert Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26(6) 1875 (2008) https://doi.org/10.1116/1.3002392
Influence of the reactor wall composition on radicals’ densities and total pressure in Cl2 inductively coupled plasmas: II. During silicon etching
