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Cited article:

Floating Island Structure With Metal Bridge to Resolve the Turn-On Recovery Problem

Ce Wang, Hengyu Wang and Kuang Sheng
IEEE Transactions on Electron Devices 71 (10) 6448 (2024)
https://doi.org/10.1109/TED.2024.3438102

A Novel Solution to the Turn-On Recovery Problem of the Floating Island Device

Ce Wang, Hengyu Wang, Haoyuan Cheng and Kuang Sheng
IEEE Transactions on Electron Devices 70 (9) 4596 (2023)
https://doi.org/10.1109/TED.2023.3299898

Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications

Olujide Adenekan, Paul Holland and Karol Kalna
Microelectronics Journal 81 94 (2018)
https://doi.org/10.1016/j.mejo.2018.09.007

A novel trench gate floating islands power MOSFET (TG-FLIMOSFET): Two-dimensional simulation study

Rakesh Vaid and Naresh Padha
Microelectronic Engineering 88 (11) 3316 (2011)
https://doi.org/10.1016/j.mee.2011.07.013