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Cited article:

Remote plasma assisted MOCVD growth of GaN on 4H-SiC: growth mode characterization exploiting ellipsometry

M. Losurdo, M. M. Giangregorio, P. Capezzuto, G. Bruno, T.-H. Kim, S. Choi, A. Brown

Eur. Phys. J. Appl. Phys., 31 3 (2005) 159-164

Published online: 2005-09-14

DOI: https://doi.org/10.1051/epjap:2005056

This article has been cited by the following article(s):

Buffer free MOCVD growth of GaN on 4H‐SiC: Effect of substrate treatments and UV‐photoirradiation

Maria Losurdo, Maria M. Giangregorio, Giovanni Bruno, Tong‐Ho Kim, Soojeong Choi and April Brown
physica status solidi (a) 203 (7) 1607 (2006)
https://doi.org/10.1002/pssa.200565154