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Cited article:

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Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy

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Micro-Raman thermometry in the presence of complex stresses in GaN devices

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SThM Temperature Mapping and Nonlinear Thermal Resistance Evolution With Bias on AlGaN/GaN HEMT Devices

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Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

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