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Cited article:

MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures

V.H. Mendez-Garcia, J.V. González-Fernández, L.I. Espinosa-Vega, et al.
Journal of Crystal Growth 378 88 (2013)
https://doi.org/10.1016/j.jcrysgro.2012.12.101

Effect of growth temperature on InAs wetting layer grown on (113)A GaAs by molecular beam epitaxy

L. Sfaxi, L. Bouzaiene, H. Sghaier and H. Maaref
Journal of Crystal Growth 293 (2) 330 (2006)
https://doi.org/10.1016/j.jcrysgro.2006.05.042