High dielectric constant oxides
Eur. Phys. J. Appl. Phys., 28 3 (2004) 265-291
Published online: 2004-12-02
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Structural characteristics of samarium oxynitride on silicon substrate
Kian Heng Goh, A.S.M.A. Haseeb and Yew Hoong WongJournal of Alloys and Compounds 722 729 (2017)
https://doi.org/10.1016/j.jallcom.2017.06.179
Erratum: Field-effect induced tunability in hyperbolic metamaterials [Phys. Rev. B 92, 184101 (2015)]
Georgia T. Papadakis and Harry A. AtwaterPhysical Review B 96 (17) (2017)
https://doi.org/10.1103/PhysRevB.96.179903
Performance and Reliability of Electrowetting-on-Dielectric (EWOD) Systems Based on Tantalum Oxide
Marcel Mibus and Giovanni ZangariACS Applied Materials & Interfaces 9 (48) 42278 (2017)
https://doi.org/10.1021/acsami.7b07366
Crystallinity of Supercooled Oxide Melts Quantified by Electrical Capacitance Measurements
Yusuke Harada, Noritaka Saito and Kunihiko NakashimaISIJ International 57 (1) 23 (2017)
https://doi.org/10.2355/isijinternational.ISIJINT-2016-299
Capacitance–voltage characteristics of sub-nanometric Al2O3 / TiO2laminates: dielectric and interface charge densities
Abdelkader Kahouli, Marwa Ben Elbahri, Oleg Lebedev and Ulrike LüdersJournal of Physics: Condensed Matter 29 (27) 275301 (2017)
https://doi.org/10.1088/1361-648X/aa7237
Role of thermodynamic miscibility gaps in phase selection in sol-gel synthesis of yttrium silicates
Surendra B. Anantharaman, V.B. Rajkumar, S. Raghunandan, et al.Journal of the European Ceramic Society 37 (15) 5001 (2017)
https://doi.org/10.1016/j.jeurceramsoc.2017.06.040
An Investigation of Electrical and Dielectric Parameters of Sol–Gel Process Enabled $\beta $ -Ga2O3 as a Gate Dielectric Material
Ahmet Kaya, Howard Mao, Jianyi Gao, et al.IEEE Transactions on Electron Devices 64 (5) 2047 (2017)
https://doi.org/10.1109/TED.2017.2675990
Electroluminescence from silicon-based light-emitting devices with erbium-doped TiO2 films annealed at different temperatures
Jinxin Chen, Zhifei Gao, Miaomiao Jiang, Yuhan Gao, Xiangyang Ma and Deren YangJournal of Applied Physics 122 (16) (2017)
https://doi.org/10.1063/1.4997858
Spectroscopic investigation of the electronic structure of thin atomic layer deposition HfO2 films
Silma Alberton Corrêa, Simone Brizzi and Dieter SchmeisserJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (1) (2016)
https://doi.org/10.1116/1.4935338
Physics-based surface potential, electric field and drain current model of aδp+Si1–xGexgate–drain underlap nanoscale n-TFET
Rupam Goswami, Brinda Bhowmick and Srimanta BaishyaInternational Journal of Electronics 1 (2016)
https://doi.org/10.1080/00207217.2016.1138514
Computation of Dielectric Response in Molecular Solids for High Capacitance Organic Dielectrics
Henry M. Heitzer, Tobin J. Marks and Mark A. RatnerAccounts of Chemical Research 49 (9) 1614 (2016)
https://doi.org/10.1021/acs.accounts.6b00173
Kinetic Monte Carlo Simulations of Defects in Anatase Titanium Dioxide
Benedikt Weiler, Alessio Gagliardi and Paolo LugliThe Journal of Physical Chemistry C 120 (18) 10062 (2016)
https://doi.org/10.1021/acs.jpcc.6b01687
Nanoscale investigations: Surface potential of rare-earth oxide (Re2O3) thin films by kelvin probe force microscopy for next generation CMOS technology
Pawan Kumar, Robin Khosla and Satinder K. SharmaSurfaces and Interfaces 4 69 (2016)
https://doi.org/10.1016/j.surfin.2016.08.003
Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression
Cheng-Yi Chang, Fu-Ming Pan, Jian-Siang Lin, Tung-Yuan Yu, Yi-Ming Li and Chieh-Yang ChenJournal of Applied Physics 120 (23) (2016)
https://doi.org/10.1063/1.4972029
Hard X-ray Photoelectron Spectroscopy (HAXPES)
Conan Weiland, Abdul K. Rumaiz and Joseph C. WoicikSpringer Series in Surface Sciences, Hard X-ray Photoelectron Spectroscopy (HAXPES) 59 381 (2016)
https://doi.org/10.1007/978-3-319-24043-5_15
Platinum-assisted post deposition annealing of the n-Ge/Y2O3interface
C Zimmermann, O Bethge, B Lutzer and E BertagnolliSemiconductor Science and Technology 31 (7) 075009 (2016)
https://doi.org/10.1088/0268-1242/31/7/075009
Two photon processes in ZnO quantum dots
Deepti Maikhuri, S.P. Purohit and K.C. MathurSuperlattices and Microstructures 89 296 (2016)
https://doi.org/10.1016/j.spmi.2015.11.017
Dielectrics in Electric Fields, Second Edition
Dielectrics in Electric Fields, Second Edition 289 (2016)https://doi.org/10.1201/b20223-8
Electroluminescence from light-emitting devices with erbium-doped TiO2 films: Enhancement effect of yttrium codoping
Miaomiao Jiang, Chen Zhu, Junwei Zhou, et al.Journal of Applied Physics 120 (16) 163104 (2016)
https://doi.org/10.1063/1.4966224
1 (2016)
https://doi.org/10.1109/ICSENS.2016.7808810
Direct tunneling gate current model for symmetric double gate junctionless transistor with SiO2/high-kgate stacked dielectric
S. Intekhab Amin and R. K. SarinJournal of Semiconductors 37 (3) 034001 (2016)
https://doi.org/10.1088/1674-4926/37/3/034001
Effects of the dielectric properties of the ceramic–solvent interface on the binding of proteins to oxide ceramics: a non-local electrostatic approach
Alexander I Rubinstein, Renat F Sabirianov and Fereydoon NamavarNanotechnology 27 (41) 415703 (2016)
https://doi.org/10.1088/0957-4484/27/41/415703
Rare earth titano-silicates for high k gate dielectric applications
M. Rakhi and G. SubodhCeramics International 42 (9) 10886 (2016)
https://doi.org/10.1016/j.ceramint.2016.03.220
Fabrication and Characterization of Polymer-Enhanced TSVs, Inductors, and Antennas for Mixed-Signal Silicon Interposer Platforms
Paragkumar A. Thadesar and Muhannad S. BakirIEEE Transactions on Components, Packaging and Manufacturing Technology 6 (3) 455 (2016)
https://doi.org/10.1109/TCPMT.2015.2511067
4f fine-structure levels as the dominant error in the electronic structures of binary lanthanide oxides
Bolong HuangJournal of Computational Chemistry 37 (9) 825 (2016)
https://doi.org/10.1002/jcc.24272
Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films
Everett D. Grimley, Tony Schenk, Xiahan Sang, Milan Pešić, Uwe Schroeder, Thomas Mikolajick and James M. LeBeauAdvanced Electronic Materials 2 (9) (2016)
https://doi.org/10.1002/aelm.201600173
Surface Modification on Solution Processable ZrO2 High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors
Wenqiang He, Wenchao Xu, Qiang Peng, et al.The Journal of Physical Chemistry C 120 (18) 9949 (2016)
https://doi.org/10.1021/acs.jpcc.6b03638
Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET
Ji-Hyun Hur and Sanghun JeonJSTS:Journal of Semiconductor Technology and Science 16 (5) 630 (2016)
https://doi.org/10.5573/JSTS.2016.16.5.630
Improving the ALD-grown Y 2 O 3 /Ge interface quality by surface and annealing treatments
C. Zimmermann, O. Bethge, K. Winkler, B. Lutzer and E. BertagnolliApplied Surface Science 369 377 (2016)
https://doi.org/10.1016/j.apsusc.2016.02.066
UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors
Emanuel Carlos, Rita Branquinho, Asal Kiazadeh, et al.ACS Applied Materials & Interfaces 8 (45) 31100 (2016)
https://doi.org/10.1021/acsami.6b06321
Memcapacitive characteristics in reactive-metal (Mo, Al)/HfOX/n-Si structures through migration of oxygen by applied voltage
Paul Yang, Young Jun Noh, Yoon-Jae Baek, Hong Zheng, Chi Jung Kang, Hyun Ho Lee and Tae-Sik YoonApplied Physics Letters 108 (5) (2016)
https://doi.org/10.1063/1.4941548
Model based precise analysis of the injection currents in Al/ZrO2/Al2O3/ZrO2/SiO2/Si structures for use in charge trapping non-volatile memory devices
N. Novkovski, A. Paskaleva, A. Skeparovski and D. SpassovMaterials Science in Semiconductor Processing 44 30 (2016)
https://doi.org/10.1016/j.mssp.2015.12.029
10175 1017508 (2016)
https://doi.org/10.1117/12.2261666
Band offsets and electronic structures of interface between In0.5Ga0.5As and InP
Genwang Cai, Changhong Wang, Weichao Wang and Erjun LiangJournal of Applied Physics 119 (5) (2016)
https://doi.org/10.1063/1.4941029
Tailoring resistive switching properties of TiO2with controlled incorporation of oxide nanoparticles
Alejandro Cristians Rios, Lorena Aarão-Rodrigues, Alisson Ronieri Cadore, et al.Materials Research Express 3 (8) 085024 (2016)
https://doi.org/10.1088/2053-1591/3/8/085024
Investigation of high-kyttrium copper titanate thin films as alternative gate dielectrics
Anna Grazia Monteduro, Zoobia Ameer, Silvia Rizzato, et al.Journal of Physics D: Applied Physics 49 (40) 405303 (2016)
https://doi.org/10.1088/0022-3727/49/40/405303
Proton Conducting Graphene Oxide/Chitosan Composite Electrolytes as Gate Dielectrics for New-Concept Devices
Ping Feng, Peifu Du, Changjin Wan, Yi Shi and Qing WanScientific Reports 6 (1) (2016)
https://doi.org/10.1038/srep34065
Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices
Ashwath Rao, Priyanka Chaurasia and B. R. SinghRadiation Effects and Defects in Solids 171 (3-4) 187 (2016)
https://doi.org/10.1080/10420150.2016.1160904
XT-02-1 (2016)
https://doi.org/10.1109/IRPS.2016.7574644
Temperature dependence of electrical transport properties of La4BaCu5− xCoxO13+δ conducting oxide thin films
Akihiro Tsuruta, Yusuke Tsujioka, Yutaka Yoshida, et al.Japanese Journal of Applied Physics 55 (4S) 04EJ08 (2016)
https://doi.org/10.7567/JJAP.55.04EJ08
Layer‐by‐Layer Assembled 2D Montmorillonite Dielectrics for Solution‐Processed Electronics
Jian Zhu, Xiaolong Liu, Michael L. Geier, Julian J. McMorrow, Deep Jariwala, Megan E. Beck, Wei Huang, Tobin J. Marks and Mark C. HersamAdvanced Materials 28 (1) 63 (2016)
https://doi.org/10.1002/adma.201504501
Strain dynamics during La2O3/Lu2O3 superlattice and alloy formation
André Proessdorf, Michael Niehle, Frank Grosse, et al.Journal of Applied Physics 119 (21) 215301 (2016)
https://doi.org/10.1063/1.4950875
Electronic properties of hafnium oxide: A contribution from defects and traps
Vladimir A. Gritsenko, Timofey V. Perevalov and Damir R. IslamovPhysics Reports 613 1 (2016)
https://doi.org/10.1016/j.physrep.2015.11.002
Silicon electro-optic modulator based on an ITO-integrated tunable directional coupler
Jin-Soo Kim and Jin Tae KimJournal of Physics D: Applied Physics 49 (7) 075101 (2016)
https://doi.org/10.1088/0022-3727/49/7/075101
Ferroelectric-Gate Field Effect Transistor Memories
Mitsue Takahashi and Shigeki SakaiTopics in Applied Physics, Ferroelectric-Gate Field Effect Transistor Memories 131 23 (2016)
https://doi.org/10.1007/978-94-024-0841-6_2
Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates
Seung Hyun Kim, So Yeong Joo, Hyun Soo Jin, Woo-Byoung Kim and Tae Joo ParkACS Applied Materials & Interfaces 8 (32) 20880 (2016)
https://doi.org/10.1021/acsami.6b06643
High mobility field effect transistor of SnOx on glass using HfOx gate oxide
Chanjong Ju, Chulkwon Park, Hyeonseok Yang, et al.Current Applied Physics 16 (3) 300 (2016)
https://doi.org/10.1016/j.cap.2015.12.015
17 (2016)
https://doi.org/10.1109/EDSSC.2016.7785200
Physical and electrical properties of thermal oxidized Sm2O3 gate oxide thin film on Si substrate: Influence of oxidation durations
Kian Heng Goh, A.S.M.A. Haseeb and Yew Hoong WongThin Solid Films 606 80 (2016)
https://doi.org/10.1016/j.tsf.2016.03.051
Auger electron spectroscopy study of semiconductor surfaces: Effect of cleaning in inert atmosphere
Jolien Debehets, Sérgio M. C. Miranda, Pía Homm, Michel Houssa, Marc Seefeldt, Jean-Pierre Locquet and Jin Won SeoJournal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 34 (4) (2016)
https://doi.org/10.1116/1.4955149
A Thin-Film Transistor With High Drain Current Induced by a Trap-Assisted Electric Double Layer
Ankita Gangwar and Baquer MazhariIEEE Transactions on Electron Devices 63 (12) 4776 (2016)
https://doi.org/10.1109/TED.2016.2614673
Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier
Diana Chien, Xiang Li, Kin Wong, Mark A. Zurbuchen, Shauna Robbennolt, Guoqiang Yu, Sarah Tolbert, Nicholas Kioussis, Pedram Khalili Amiri, Kang L. Wang and Jane P. ChangApplied Physics Letters 108 (11) (2016)
https://doi.org/10.1063/1.4943023
Improved interface properties of GaN metal-oxide-semiconductor device with non-polar plane and AlN passivation layer
Xian Wu, Renrong Liang, Lei Guo, Lei Liu, Lei Xiao, Shanshan Shen, Jun Xu and Jing WangApplied Physics Letters 109 (23) (2016)
https://doi.org/10.1063/1.4971352
Thickness-dependent phase evolution and dielectric property of Hf0.5Zr0.5O2 thin films prepared with aqueous precursor
Yong Yan, Dayu Zhou, Chunxia Guo, et al.Journal of Sol-Gel Science and Technology 77 (2) 430 (2016)
https://doi.org/10.1007/s10971-015-3871-5
Reduction of Monoclinic HfO2: A Cascading Migration of Oxygen and Its Interplay with a High Electric Field
Boubacar Traoré, Philippe Blaise and Benoît SklénardThe Journal of Physical Chemistry C 120 (43) 25023 (2016)
https://doi.org/10.1021/acs.jpcc.6b06913
Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric
Zhi-Peng Ling, Jun-Tao Zhu, Xinke Liu and Kah-Wee AngScientific Reports 6 (1) (2016)
https://doi.org/10.1038/srep26609
Investigations on high-κ dielectrics for low threshold voltage and low leakage zinc oxide thin-film transistor, using material selection methodologies
Kavindra Kandpal and Navneet GuptaJournal of Materials Science: Materials in Electronics 27 (6) 5972 (2016)
https://doi.org/10.1007/s10854-016-4519-0
Electrically Polarized Biomaterials
Syed A. M. Tofail and Joanna BauerAdvanced Materials 28 (27) 5470 (2016)
https://doi.org/10.1002/adma.201505403
Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications
J. Charles Pravin, D. Nirmal, P. Prajoon and J. AjayanPhysica E: Low-dimensional Systems and Nanostructures 83 95 (2016)
https://doi.org/10.1016/j.physe.2016.04.017
1 (2016)
https://doi.org/10.1109/IEMT.2016.7761971
Kinetic Monte Carlo of transport processes in Al/AlOx/Au-layers: Impact of defects
Benedikt Weiler, Tobias Haeberle, Alessio Gagliardi and Paolo LugliAIP Advances 6 (9) (2016)
https://doi.org/10.1063/1.4963180
Simulation of Graphene Base Transistors With Bilayer Tunnel Oxide Barrier: Model Calibration and Performance Projection
Valerio Di Lecce, Antonio Gnudi, Elena Gnani, Susanna Reggiani and Giorgio BaccaraniIEEE Electron Device Letters 37 (11) 1489 (2016)
https://doi.org/10.1109/LED.2016.2606391
A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices
Niladri Pratap Maity, Reshmi Maity, R.K. Thapa and Srimanta BaishyaSuperlattices and Microstructures 95 24 (2016)
https://doi.org/10.1016/j.spmi.2016.04.032
Interface and electrical properties of ultra-thin HfO2 film grown by radio frequency sputtering
Madhuchhanda Nath and Asim RoyPhysica B: Condensed Matter 482 43 (2016)
https://doi.org/10.1016/j.physb.2015.12.007
How morphology determines the charge storage properties of Ge nanocrystals in HfO 2
A. Slav, C. Palade, A.M. Lepadatu, et al.Scripta Materialia 113 135 (2016)
https://doi.org/10.1016/j.scriptamat.2015.10.028
Science and technology of diamond films grown on HfO2 interface layer for transformational technologies
Jesus J. Alcantar-Peña, Geunhee Lee, Erika M.A. Fuentes-Fernandez, Pablo Gurman, Manuel Quevedo-Lopez, Satyaprakash Sahoo, Ram S. Katiyar, Dainet Berman and Orlando AucielloDiamond and Related Materials 69 221 (2016)
https://doi.org/10.1016/j.diamond.2016.09.010
Stored Coulomb Self-Energy of a Uniformly Charged Rectangular Plate
Orion CiftjaAdvances in Mathematical Physics 2016 1 (2016)
https://doi.org/10.1155/2016/7207536
Band Alignment at Molybdenum Disulphide/Boron Nitride/Aluminum Oxide Interfaces
Jennifer DiStefano, Yu-Chuan Lin, Joshua Robinson, et al.Journal of Electronic Materials 45 (2) 983 (2016)
https://doi.org/10.1007/s11664-015-4255-x
Chemistry of surface nanostructures in lead precursor-rich PbZr0.52Ti0.48O3 sol–gel films
I. Gueye, G. Le Rhun, P. Gergaud, et al.Applied Surface Science 363 21 (2016)
https://doi.org/10.1016/j.apsusc.2015.11.118
Dielectric Engineering of Nanostructured Layers to Control the Transport of Injected Charges in Thin Dielectrics
Kremena Makasheva, Christina Villeneuve-Faure, Caroline Bonafos, et al.IEEE Transactions on Nanotechnology 15 (6) 839 (2016)
https://doi.org/10.1109/TNANO.2016.2553179
High-mobility BaSnO3 thin-film transistor with HfO2 gate insulator
Young Mo Kim, Chulkwon Park, Useong Kim, Chanjong Ju and Kookrin CharApplied Physics Express 9 (1) 011201 (2016)
https://doi.org/10.7567/APEX.9.011201
Growth stress induced tunability of dielectric permittivity in thin films
K. V. L. V. Narayanachari, Hareesh Chandrasekar, Amiya Banerjee, K. B. R. Varma, Rajeev Ranjan, Navakanta Bhat and Srinivasan RaghavanJournal of Applied Physics 119 (1) (2016)
https://doi.org/10.1063/1.4939466
Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors
L. Sambuco Salomone, J. Lipovetzky, S.H. Carbonetto, et al.Thin Solid Films 600 36 (2016)
https://doi.org/10.1016/j.tsf.2016.01.007
Formation of hybrid hafnium oxide by applying sacrifacial silicon film
Chiung-Wei Lin, Bo-Shen Zheng and Jing-Wei HuangJapanese Journal of Applied Physics 55 (1S) 01AA10 (2016)
https://doi.org/10.7567/JJAP.55.01AA10
Prospects and challenges of perovskite type transparent conductive oxides in photovoltaic applications. Part II – Synthesis and deposition
Muhammad Arif Riza, Mohd Adib Ibrahim, Ubani Charles Ahamefula, et al.Solar Energy 139 309 (2016)
https://doi.org/10.1016/j.solener.2016.08.045
Effects of annealing on electrical performance of multilayer MoS2 transistors with atomic layer deposited HfO2 gate dielectric
Ming Wen, Jingping Xu, Lu Liu, Pui-To Lai and Wing-Man TangApplied Physics Express 9 (9) 095202 (2016)
https://doi.org/10.7567/APEX.9.095202
Current–voltage and low-frequency noise analysis of heterojunction diodes with various passivation layers
Young-Uk Ko, Ho-Jin Yun, Kwang-Seok Jeong, et al.Thin Solid Films 598 109 (2016)
https://doi.org/10.1016/j.tsf.2015.12.009
Reduced-temperature solution-processed transparent oxide low-voltage-operable field-effect transistors
Yu Liu, Kyle McElhinny, Olivia Alley, Paul G. Evans and Howard E. KatzMRS Communications 5 (4) 605 (2015)
https://doi.org/10.1557/mrc.2015.79
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations
R.C.R. Santos, E. Longhinotti, V.N. Freire, R.B. Reimberg and E.W.S. CaetanoChemical Physics Letters 637 172 (2015)
https://doi.org/10.1016/j.cplett.2015.08.004
Annealing temperature modulated interfacial chemistry and electrical characteristics of sputtering-derived HfO2/Si gate stack
J. Gao, G. He, J.W. Zhang, B. Deng and Y.M. LiuJournal of Alloys and Compounds 647 322 (2015)
https://doi.org/10.1016/j.jallcom.2015.05.157
Effect of oxygen/argon gas ratio on the structure and optical properties of sputter-deposited nanocrystalline HfO2 thin films
C.V. Ramana, M. Vargas, G.A. Lopez, et al.Ceramics International 41 (5) 6187 (2015)
https://doi.org/10.1016/j.ceramint.2014.12.141
Defect calculations in semiconductors through a dielectric-dependent hybrid DFT functional: The case of oxygen vacancies in metal oxides
Matteo Gerosa, Carlo Enrico Bottani, Lucia Caramella, Giovanni Onida, Cristiana Di Valentin and Gianfranco PacchioniThe Journal of Chemical Physics 143 (13) (2015)
https://doi.org/10.1063/1.4931805
Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack
V. Mikhelashvili, R. Padmanabhan, B. Meyler, S. Yofis, G. Atiya, Z. Cohen-Hyams, S. Weindling, G. Ankonina, J. Salzman, W. D. Kaplan and G. EisensteinJournal of Applied Physics 118 (13) (2015)
https://doi.org/10.1063/1.4932031
Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics
K.C. Lin, P.C. Juan, C.H. Liu, M.C. Wang and C.H. ChouMicroelectronics Reliability 55 (11) 2198 (2015)
https://doi.org/10.1016/j.microrel.2015.07.045
Impact of Uniaxial Strain on Random Telegraph Noise in High- $k$ /Metal Gate pMOSFETs
Po-Chin Huang, Jone F. Chen, Shih Chang Tsai, et al.IEEE Transactions on Electron Devices 62 (3) 988 (2015)
https://doi.org/10.1109/TED.2015.2391298
1 (2015)
https://doi.org/10.1109/VLSI-TSA.2015.7117568
On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs
Muhammad NawazActive and Passive Electronic Components 2015 1 (2015)
https://doi.org/10.1155/2015/651527
Protective layer of AL2O3 nanocomposites and surface composition after electrical stress
Christian Meichsner, Timothy Clark, Peter Groeppel, et al.IEEE Transactions on Dielectrics and Electrical Insulation 22 (5) 2944 (2015)
https://doi.org/10.1109/TDEI.2015.004939
Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction
M. Kuzmin, P. Laukkanen, M. Yasir, et al.Physical Review B 92 (16) (2015)
https://doi.org/10.1103/PhysRevB.92.165311
Interface engineering for high performance graphene electronic devices
Dae Yool Jung, Sang Yoon Yang, Hamin Park, et al.Nano Convergence 2 (1) (2015)
https://doi.org/10.1186/s40580-015-0042-x
60 (2015)
https://doi.org/10.1109/ESSDERC.2015.7324713
Interfacial and electrical properties of radio frequency sputtered ultra-thin TiO2 film for gate oxide applications
Madhuchhanda Nath and Asim RoyJournal of Materials Science: Materials in Electronics 26 (11) 9107 (2015)
https://doi.org/10.1007/s10854-015-3598-7
Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects
Mahdieh Aghamohammadi, Reinhold Rödel, Ute Zschieschang, et al.ACS Applied Materials & Interfaces 7 (41) 22775 (2015)
https://doi.org/10.1021/acsami.5b02747
Structural and Dielectric Properties of Subnanometric Laminates of Binary Oxides
Abdelkader Kahouli, Oleg Lebedev, Marwa Ben Elbahri, et al.ACS Applied Materials & Interfaces 7 (46) 25679 (2015)
https://doi.org/10.1021/acsami.5b06485
Energy distribution extraction of negative charges responsible for positive bias temperature instability
Shang-Qing Ren, Hong Yang, Wen-Wu Wang, et al.Chinese Physics B 24 (7) 077304 (2015)
https://doi.org/10.1088/1674-1056/24/7/077304
Study of Si kinetics in interfacial SiO2scavenging in HfO2gate stacks
Xiuyan Li, Takeaki Yajima, Tomonori Nishimura and Akira ToriumiApplied Physics Express 8 (6) 061304 (2015)
https://doi.org/10.7567/APEX.8.061304
Synergistic effect of non-thermal plasma–catalysis hybrid system on methane complete oxidation over Pd-based catalysts
Heesoo Lee, Dae-Hoon Lee, Young-Hoon Song, et al.Chemical Engineering Journal 259 761 (2015)
https://doi.org/10.1016/j.cej.2014.07.128
Handbook of Manufacturing Engineering and Technology
Kuan Yew Cheong and Yew Hoong WongHandbook of Manufacturing Engineering and Technology 2997 (2015)
https://doi.org/10.1007/978-1-4471-4670-4_47
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation
Amritesh Rai, Amithraj Valsaraj, Hema C.P. Movva, et al.Nano Letters 15 (7) 4329 (2015)
https://doi.org/10.1021/acs.nanolett.5b00314
Reactively sputtered hafnium oxide on silicon dioxide: Structural and electrical properties
Vl. Kolkovsky, K. Lukat, E. Kurth and C. KunathSolid-State Electronics 106 63 (2015)
https://doi.org/10.1016/j.sse.2015.01.004