Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

Electronic structure and charge transport in nonstoichiometric tantalum oxide

T V Perevalov, V A Gritsenko, A A Gismatulin, et al.
Nanotechnology 29 (26) 264001 (2018)
https://doi.org/10.1088/1361-6528/aaba4c

Study on the dielectric properties of Al2O3/TiO2sub-nanometric laminates: effect of the bottom electrode and the total thickness

M Ben Elbahri, A Kahouli, B Mercey, et al.
Journal of Physics D: Applied Physics 51 (6) 065101 (2018)
https://doi.org/10.1088/1361-6463/aaa4df

Plasma assisted oxidative coupling of methane (OCM) over Ag/SiO2 and subsequent regeneration at low temperature

Heesoo Lee, Dae-Hoon Lee, Jeong Myeong Ha and Do Heui Kim
Applied Catalysis A: General 557 39 (2018)
https://doi.org/10.1016/j.apcata.2018.03.007

Memory improvement with high-k buffer layer in metal/ SrBi2Nb2O9/Al2O3/silicon gate stack for non-volatile memory applications

Prashant Singh, Rajesh Kumar Jha, Rajat Kumar Singh and B.R. Singh
Superlattices and Microstructures 121 55 (2018)
https://doi.org/10.1016/j.spmi.2018.07.028

Structural and electrical properties of Ge-doped ZrO2 thin films grown by atomic layer deposition for high-k dielectrics

Bo-Eun Park, Yujin Lee, Il-Kwon Oh, et al.
Journal of Materials Science 53 (21) 15237 (2018)
https://doi.org/10.1007/s10853-018-2695-4

Design Space Exploration for Selector Diode-STTRAM Crossbar Arrays

Swaroop Ghosh, Rashmi Jha, Anirudh Iyengar and Rekha Govindaraj
IEEE Transactions on Magnetics 54 (6) 1 (2018)
https://doi.org/10.1109/TMAG.2018.2810185

Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric

Jingping Xu, Ming Wen, Xinyuan Zhao, et al.
Nanotechnology 29 (34) 345201 (2018)
https://doi.org/10.1088/1361-6528/aac853

Flexible IGZO Schottky diodes on paper

Jakub Kaczmarski, Michał A Borysiewicz, Krzysztof Piskorski, et al.
Semiconductor Science and Technology 33 (1) 015010 (2018)
https://doi.org/10.1088/1361-6641/aa9acb

Tunable dual-band graphene-based infrared reflectance filter

Michael D. Goldflam, Isaac Ruiz, Stephen W. Howell, et al.
Optics Express 26 (7) 8532 (2018)
https://doi.org/10.1364/OE.26.008532

Nanoscale High-k Dielectrics for Junctionless Nanowire Transistor for Drain Current Analysis

J. Charles Pravin, P. Prajoon, Flavia Princess Nesamania, et al.
Journal of Electronic Materials 47 (5) 2679 (2018)
https://doi.org/10.1007/s11664-018-6075-2

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Thomas Mikolajick, Stefan Slesazeck, Min Hyuk Park and Uwe Schroeder
MRS Bulletin 43 (5) 340 (2018)
https://doi.org/10.1557/mrs.2018.92

WITHDRAWN: Structural and band gaps studies of novel Al2-xHfxO3 materials toward MOS applications

Norlida Kamarulzaman, Annie Maria Mahat, Nurhanna Badar and Cezhou Zhao
Materials Chemistry and Physics (2018)
https://doi.org/10.1016/j.matchemphys.2018.03.024

Effect of the interfacial (low-k SiO2 vs high-k Al2O3) dielectrics on the electrical performance of a-ITZO TFT

Taki Eddine Taouririt, Afak Meftah and Nouredine Sengouga
Applied Nanoscience 8 (8) 1865 (2018)
https://doi.org/10.1007/s13204-018-0866-x

Implementation of Low‐Power Electronic Devices Using Solution‐Processed Tantalum Pentoxide Dielectric

Jungwoo Heo, Song Yi Park, Jae Won Kim, Seyeong Song, Yung Jin Yoon, Jaeki Jeong, Hyungsu Jang, Kang Taek Lee, Jung Hwa Seo, Bright Walker and Jin Young Kim
Advanced Functional Materials 28 (28) (2018)
https://doi.org/10.1002/adfm.201704215

Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique

Vladimir Kolkovsky, Sebastian Scholz, Valery Kolkovsky, Jan-Uwe Schmidt and Rene Heller
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 (6) (2018)
https://doi.org/10.1116/1.5045634

β-Ga2O3-based metal–oxide–semiconductor photodiodes with HfO2 as oxide

Takayoshi Oshima, Makoto Hashikawa, Sansei Tomizawa, et al.
Applied Physics Express 11 (11) 112202 (2018)
https://doi.org/10.7567/APEX.11.112202

Electrostatic Self-Assembly: Understanding the Significance of the Solvent

Eric B. Lindgren, Ivan N. Derbenev, Armik Khachatourian, et al.
Journal of Chemical Theory and Computation 14 (2) 905 (2018)
https://doi.org/10.1021/acs.jctc.7b00647

Structural and electrical properties of ferroelectric BiFeO3/HfO2 gate stack for nonvolatile memory applications

Nitish Yadav, Kamal Prakash Pandey and Pramod Narayan Tripathi
Journal of Advanced Dielectrics 08 (05) 1850037 (2018)
https://doi.org/10.1142/S2010135X18500376

Perspective of zinc oxide based thin film transistors: a comprehensive review

Kavindra Kandpal and Navneet Gupta
Microelectronics International 35 (1) 52 (2018)
https://doi.org/10.1108/MI-10-2016-0066

Nitrogen plasma-induced HfSiON film growth from Hf nanoscale islands on SiO2/Si

Takeshi Kitajima, Ryosuke Kage and Toshiki Nakano
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36 (5) (2018)
https://doi.org/10.1116/1.5037652

Microstructure tuning facilitated photo-efficiency enhancement and environmental benign nature of HfO2/Mo/HfO2 multilayer films

P. Dubey, J. Gomez, S. Manandhar, V. Shutthanandan and C.V. Ramana
Solar Energy 166 146 (2018)
https://doi.org/10.1016/j.solener.2017.12.021

Interconnections between Electronic Structure and Optical Properties of Multilayer Nanolaminate TiAlN/Ag and Al2O3/Ag Coatings

Dmitry Wainstein, Anatoly Kovalev, Vladimir Vakhrushev, Raul Gago and Jose L. Endrino
Coatings 8 (8) 290 (2018)
https://doi.org/10.3390/coatings8080290

Electrostatic Supercapacitors by Atomic Layer Deposition on Nanoporous Anodic Alumina Templates for Environmentally Sustainable Energy Storage

Luis Javier Fernández-Menéndez, Ana Silvia González, Víctor Vega and Víctor Manuel De la Prida
Coatings 8 (11) 403 (2018)
https://doi.org/10.3390/coatings8110403

Decoupling the Effects of Mass Density and Hydrogen-, Oxygen-, and Aluminum-Based Defects on Optoelectronic Properties of Realistic Amorphous Alumina

Vanessa Riffet and Julien Vidal
The Journal of Physical Chemistry Letters 8 (11) 2469 (2017)
https://doi.org/10.1021/acs.jpclett.7b00896

Localized defect states and charge trapping in atomic layer deposited-Al2O3 films

Karsten Henkel, Malgorzata Kot and Dieter Schmeißer
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35 (1) (2017)
https://doi.org/10.1116/1.4971991

Electrical Properties of Ge pMOSFETs With Ultrathin EOT HfO2/AlOx/GeOxGate-Stacks and NiGe Metal Source/Drain

Rui Zhang, Junkang Li and Xiao Yu
IEEE Transactions on Electron Devices 64 (12) 4831 (2017)
https://doi.org/10.1109/TED.2017.2761885

Enhanced thermoelectric performance through carrier scattering at spherical nanoparticles in Bi0.5Sb1.5Te3/Ta2O5 composites

Eun Bin Kim, Peyala Dharmaiah, Dongwon Shin, Kap-Ho Lee and Soon-Jik Hong
Journal of Alloys and Compounds 703 614 (2017)
https://doi.org/10.1016/j.jallcom.2017.01.340

Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric

Ming Wen, Jingping Xu, Lu Liu, Pui-To Lai and Wing-Man Tang
IEEE Transactions on Electron Devices 64 (3) 1020 (2017)
https://doi.org/10.1109/TED.2017.2650920

Cross-Point Resistive Switching Memory and Urea Sensing by Using Annealed GdOxFilm in IrOx/GdOx/W Structure for Biomedical Applications

Pankaj Kumar, Siddheswar Maikap, Sreekanth Ginnaram, et al.
Journal of The Electrochemical Society 164 (4) B127 (2017)
https://doi.org/10.1149/2.1011704jes

Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor

J. Charles Pravin, D. Nirmal, P. Prajoon, N. Mohan Kumar and J. Ajayan
Superlattices and Microstructures 104 470 (2017)
https://doi.org/10.1016/j.spmi.2017.03.012

Nonlinear polarization responses of ZrO2-based thin films fabricated by chemical solution deposition

Shingo Yoneda, Tadasu Hosokura, Masahiko Kimura, Akira Ando and Kosuke Shiratsuyu
Japanese Journal of Applied Physics 56 (10S) 10PF07 (2017)
https://doi.org/10.7567/JJAP.56.10PF07

Band alignment and interfacial chemical structure of the HfLaO/InGaZnO4 heterojunction investigated by x-ray photoelectron spectroscopy

Ling-Xuan Qian, Ze-Han Wu, Yi-Yu Zhang, et al.
Journal of Physics D: Applied Physics 50 (14) 145106 (2017)
https://doi.org/10.1088/1361-6463/aa5dda

Quantum Dot Channel (QDC) Field Effect Transistors (FETs) Configured as Floating Gate Nonvolatile Memories (NVMs)

Jun Kondo, Murali Lingalugari, Pial Mirdha, et al.
International Journal of High Speed Electronics and Systems 26 (03) 1740015 (2017)
https://doi.org/10.1142/S0129156417400158

Energy band alignment at the nanoscale

Jonas Deuermeier, Elvira Fortunato, Rodrigo Martins and Andreas Klein
Applied Physics Letters 110 (5) (2017)
https://doi.org/10.1063/1.4975644

Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics

Mrinal K. Hota, Fwzah H. Alshammari, Khaled N. Salama and Husam N. Alshareef
ACS Applied Materials & Interfaces 9 (26) 21856 (2017)
https://doi.org/10.1021/acsami.7b03078

Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB|MgO interface

Xiang Li, Kevin Fitzell, Di Wu, C. Ty Karaba, Abraham Buditama, Guoqiang Yu, Kin L. Wong, Nicholas Altieri, Cecile Grezes, Nicholas Kioussis, Sarah Tolbert, Zongzhi Zhang, Jane P. Chang, Pedram Khalili Amiri and Kang L. Wang
Applied Physics Letters 110 (5) (2017)
https://doi.org/10.1063/1.4975160

Effects of anodisation parameters on thin film properties: A review

Y. H. Wong, M. G. Affendy, S. K. Lau, P. C. Teh, H. J. Lee, C. Y. Tan and S. Ramesh
Materials Science and Technology 33 (6) 699 (2017)
https://doi.org/10.1080/02670836.2016.1193654

Transition-metal-oxide based functional thin-film device using leakage-free electrolyte

Takayoshi KATASE and Hiromichi OHTA
Journal of the Ceramic Society of Japan 125 (8) 608 (2017)
https://doi.org/10.2109/jcersj2.17098

Direct imaging of sketched conductive nanostructures at the LaAlO3/SrTiO3 interface

Zhanzhi Jiang, Xiaoyu Wu, Hyungwoo Lee, Jung-Woo Lee, Jianan Li, Guanglei Cheng, Chang-Beom Eom, Jeremy Levy and Keji Lai
Applied Physics Letters 111 (23) (2017)
https://doi.org/10.1063/1.5005917

Performance of THz Components Based on Microstrip PECVD SiNxTechnology

Matvey Finkel, Holger Thierschmann, Luca Galatro, et al.
IEEE Transactions on Terahertz Science and Technology 7 (6) 765 (2017)
https://doi.org/10.1109/TTHZ.2017.2759507

Determining the Optimized Layer-by-Layer Film Architecture With Dendrimer/Carbon Nanotubes for Field-Effect Sensors

Marcos A. M. Sousa, Jose R. Siqueira, Andres Vercik, Michael J. Schoning and Osvaldo N. Oliveira
IEEE Sensors Journal 17 (6) 1735 (2017)
https://doi.org/10.1109/JSEN.2017.2653238

High-ĸ dielectric oxide as an interfacial layer with enhanced photo-generation for Gr/Si solar cells

Muhammad Fahad Bhopal, Kamran Akbar, Malik Abdul Rehman, et al.
Carbon 125 56 (2017)
https://doi.org/10.1016/j.carbon.2017.09.038

Heterogate junctionless tunnel field-effect transistor: future of low-power devices

Shiromani Balmukund Rahi, Pranav Asthana and Shoubhik Gupta
Journal of Computational Electronics 16 (1) 30 (2017)
https://doi.org/10.1007/s10825-016-0936-9

Designing graphene absorption in a multispectral plasmon-enhanced infrared detector

Michael D. Goldflam, Zhe Fei, Isaac Ruiz, et al.
Optics Express 25 (11) 12400 (2017)
https://doi.org/10.1364/OE.25.012400

Trap-assisted tunneling, capacitance–voltage characteristics, and surface properties of Sm2O3 thin film on Si substrate

Kian Heng Goh, A. S. M. A. Haseeb and Yew Hoong Wong
Journal of Materials Science: Materials in Electronics 28 (6) 4725 (2017)
https://doi.org/10.1007/s10854-016-6115-8

Effect of oxygen vacancies and strain on the phonon spectrum of HfO2 thin films

Lingyuan Gao, Eilam Yalon, Annabel R. Chew, Sanchit Deshmukh, Alberto Salleo, Eric Pop and Alexander A. Demkov
Journal of Applied Physics 121 (22) (2017)
https://doi.org/10.1063/1.4984833

Method for disclosing invisible physical properties in metal−ferroelectric−insulator−semiconductor gate stacks

Shigeki Sakai, Wei Zhang and Mitsue Takahashi
Journal of Physics D: Applied Physics 50 (16) 165107 (2017)
https://doi.org/10.1088/1361-6463/aa622f

Optical Properties of TiO2 Films Deposited by Reactive Electron Beam Sputtering

V. N. Kruchinin, T. V. Perevalov, V. V. Atuchin, et al.
Journal of Electronic Materials 46 (10) 6089 (2017)
https://doi.org/10.1007/s11664-017-5552-3

Lanthanide rare earth oxide thin film as an alternative gate oxide

Kian Heng Goh, A.S.M.A. Haseeb and Yew Hoong Wong
Materials Science in Semiconductor Processing 68 302 (2017)
https://doi.org/10.1016/j.mssp.2017.06.037

Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations

R. Thamankar, F. M. Puglisi, A. Ranjan, N. Raghavan, K. Shubhakar, J. Molina, L. Larcher, A. Padovani, P. Pavan, S. J. O'Shea and K. L. Pey
Journal of Applied Physics 122 (2) (2017)
https://doi.org/10.1063/1.4991002

Low-voltage organic thin-film transistors based on solution-processed hybrid dielectrics: theoretical and experimental studies

Qiutan Ke, Qian Wu, Lijuan Liang, et al.
Semiconductor Science and Technology 32 (10) 104007 (2017)
https://doi.org/10.1088/1361-6641/aa8641

Synthesis and Ionic Conductivity Studies of In- and Y-Doped Li6Hf2O7as Solid-State Electrolyte for All-Solid State Li-Ion Batteries

M. Amores, S. A. Corr and E. J. Cussen
Journal of The Electrochemical Society 164 (1) A6395 (2017)
https://doi.org/10.1149/2.06011701jes

Interface formation energy, bonding, energy band alignment in α-NaYF 4 related core shell models: For future multi-layer core shell luminescence materials

Bolong HUANG, Hao DONG, Ka-Leung Wong, Lingdong SUN and Chunhua YAN
Journal of Rare Earths 35 (4) 315 (2017)
https://doi.org/10.1016/S1002-0721(17)60915-3

Comparison of resistive switching characteristics by using e-gun/sputter deposited SiOx film in W/SiOx/TiN structure and pH/creatinine sensing through iridium electrode

Sourav Roy, Anisha Roy, Rajeswar Panja, et al.
Journal of Alloys and Compounds 726 30 (2017)
https://doi.org/10.1016/j.jallcom.2017.07.304

Synaptic transistor with a reversible and analog conductance modulation using a Pt/HfOx/n-IGZO memcapacitor

Paul Yang, Hyung Jun Kim, Hong Zheng, et al.
Nanotechnology 28 (22) 225201 (2017)
https://doi.org/10.1088/1361-6528/aa6dac

Transformation: nanotechnology—challenges in transistor design and future technologies

Bianka Ullmann and Tibor Grasser
e & i Elektrotechnik und Informationstechnik 134 (7) 349 (2017)
https://doi.org/10.1007/s00502-017-0534-y

Composite Polymer Electrolytes with Li7La3Zr2O12 Garnet-Type Nanowires as Ceramic Fillers: Mechanism of Conductivity Enhancement and Role of Doping and Morphology

Ting Yang, Jin Zheng, Qian Cheng, Yan-Yan Hu and Candace K. Chan
ACS Applied Materials & Interfaces 9 (26) 21773 (2017)
https://doi.org/10.1021/acsami.7b03806

Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO 2 and fabricated at low temperature

Joel Molina, Reydezel Torres, Alok Ranjan and Kin-Leong Pey
Materials Science in Semiconductor Processing 66 191 (2017)
https://doi.org/10.1016/j.mssp.2017.05.001

Origin of Abnormal Dielectric Behavior and Chemical States in Amorphous CaCu3Ti4O12 Thin Films on a Flexible Polymer Substrate

Chan Su Han, Hong Rak Choi, Hong Je Choi and Yong Soo Cho
Chemistry of Materials 29 (14) 5915 (2017)
https://doi.org/10.1021/acs.chemmater.7b01346

Methodology for extraction of space charge density profiles at nanoscale from Kelvin probe force microscopy measurements

C Villeneuve-Faure, L Boudou, K Makasheva and G Teyssedre
Nanotechnology 28 (50) 505701 (2017)
https://doi.org/10.1088/1361-6528/aa9839

High performance organic nonvolatile memory transistors based on HfO2 and poly(α-methylstyrene) electret hybrid charge-trapping layers

W. C. Xu, H. X. He, X. S. Jing, S. J. Wu, Z. Zhang, J. W. Gao, X. S. Gao, G. F. Zhou, X. B. Lu and J.-M. Liu
Applied Physics Letters 111 (6) (2017)
https://doi.org/10.1063/1.4997748

Real-time atomistic observation of structural phase transformations in individual hafnia nanorods

Bethany M. Hudak, Sean W. Depner, Gregory R. Waetzig, et al.
Nature Communications 8 (1) (2017)
https://doi.org/10.1038/ncomms15316

Room Temperature Antiferromagnetic Ordering of Nanocrystalline Tb1.90Ni0.10O3

J. Mandal, M. Dalal, B. J. Sarkar and P. K. Chakrabarti
Journal of Electronic Materials 46 (2) 1107 (2017)
https://doi.org/10.1007/s11664-016-5077-1

Elastic Modulus of HfO2 Thin Film Grown by Atomic Layer Deposition with Wrinkle‐based Measurement

Hyun‐Ju Choi and Yongseong Kim
Bulletin of the Korean Chemical Society 38 (10) 1246 (2017)
https://doi.org/10.1002/bkcs.11251

Charge transport properties of bulk-heterojunction organic solar cells investigated by displacement current measurement technique

Teng Ma, Jinyu Zhang, Daisuke Tadaki, Yasuo Kimura, Ayumi Hirano-Iwata and Michio Niwano
Organic Electronics 51 269 (2017)
https://doi.org/10.1016/j.orgel.2017.09.020

A Suspended Six-Port Transformer-Based Power Divider for 2.4 GHz Applications

Wen-Hui Huang, I-Yu Huang, Wun-Hong Syu, Chia-Lung Sung and Chia-Hsu Hsieh
Micromachines 8 (4) 118 (2017)
https://doi.org/10.3390/mi8040118

Effect of high‐k dielectric on the performance of Si, InAs and CNT FET

Bhubon Chandra Mech and Jitendra Kumar
Micro & Nano Letters 12 (9) 624 (2017)
https://doi.org/10.1049/mnl.2017.0088

Interface chemistry study of InSb/Al 2 O 3 stacks upon in situ post deposition annealing by synchrotron radiation photoemission spectroscopy

Xiaoran Shi, Xinglu Wang, Yong Sun, et al.
Applied Surface Science 425 932 (2017)
https://doi.org/10.1016/j.apsusc.2017.07.001

Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories

Robin Khosla, Erlend Granbo Rolseth, Pawan Kumar, et al.
IEEE Transactions on Device and Materials Reliability 17 (1) 80 (2017)
https://doi.org/10.1109/TDMR.2017.2659760

The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO 2 high-k dielectrics

Ruo Zheng Wang, Sheng Li Wu, Xin Yu Li and Jin Tao Zhang
Solid-State Electronics 133 6 (2017)
https://doi.org/10.1016/j.sse.2017.04.004

Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

Yung-Shao Shen, Kuen-Yi Chen, Po-Chun Chen, Teng-Chuan Chen and Yung-Hsien Wu
Scientific Reports 7 (1) (2017)
https://doi.org/10.1038/srep43659

Wide band gap of Strontium doped Hafnium oxide nanoparticles for opto-electronic device applications – Synthesis and characterization

J. Manikantan, H.B. Ramalingam, B. Chandar Shekar, et al.
Materials Letters 186 42 (2017)
https://doi.org/10.1016/j.matlet.2016.08.026

Elemental diffusion study of Ge/Al2O3 and Ge/AlN/Al2O3 interfaces upon post deposition annealing

Yunna Zhu, Xinglu Wang, Chen Liu, et al.
Surfaces and Interfaces 9 51 (2017)
https://doi.org/10.1016/j.surfin.2017.07.006

A high-performance channel engineered charge-plasma-based MOSFET with high-κ spacer

Chan Shan, Ying Wang, Xin Luo, et al.
Superlattices and Microstructures 112 499 (2017)
https://doi.org/10.1016/j.spmi.2017.10.002

Physical and optical properties of HfO 2 NPs – Synthesis and characterization in finding its feasibility in opto-electronic devices

J. Manikantan, H.B. Ramalingam, B. Chandar Shekar, et al.
Advanced Powder Technology 28 (7) 1636 (2017)
https://doi.org/10.1016/j.apt.2017.03.022

Probing nanoscale oxygen ion motion in memristive systems

Yuchao Yang, Xiaoxian Zhang, Liang Qin, et al.
Nature Communications 8 (1) (2017)
https://doi.org/10.1038/ncomms15173

An approach to enhance memory retention capacity in MFIS structures using different insulating buffer layer

Prashant Singh, Rajat Kumar Singh and B. R. Singh
Ferroelectrics 519 (1) 213 (2017)
https://doi.org/10.1080/00150193.2017.1361264

Rigorous numerical modeling of scattering-type scanning near-field optical microscopy and spectroscopy

Xinzhong Chen, Chiu Fan Bowen Lo, William Zheng, Hai Hu, Qing Dai and Mengkun Liu
Applied Physics Letters 111 (22) (2017)
https://doi.org/10.1063/1.5008663

Defect correlated with positive charge trapping in functional HfO2 layers on (100)Si revealed by electron spin resonance: Evidence for oxygen vacancy?

A. Stesmans and V.V. Afanas'ev
Microelectronic Engineering 178 112 (2017)
https://doi.org/10.1016/j.mee.2017.04.035

Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications

Yogesh Goswami, Pranav Asthana and Bahniman Ghosh
Journal of Semiconductors 38 (5) 054002 (2017)
https://doi.org/10.1088/1674-4926/38/5/054002

Superior NBTI in High- $k$ SiGe Transistors–Part I: Experimental

M. Waltl, G. Rzepa, A. Grill, et al.
IEEE Transactions on Electron Devices 64 (5) 2092 (2017)
https://doi.org/10.1109/TED.2017.2686086

High-Performance Single-Electron Transistor Based on Metal–Organic Complex of Thiophene: First Principle Study

Anu, Archana Sharma, Md. Shahzad Khan, et al.
IEEE Transactions on Electron Devices 64 (11) 4628 (2017)
https://doi.org/10.1109/TED.2017.2756106

Understanding Structure and Stability of Monoclinic Zirconia Surfaces from First-Principles Calculations

Andrey S. Bazhenov and Karoliina Honkala
Topics in Catalysis 60 (6-7) 382 (2017)
https://doi.org/10.1007/s11244-016-0701-0

Optical Line Width Broadening Mechanisms at the 10 kHz Level in Eu3+:Y2O3 Nanoparticles

John G. Bartholomew, Karmel de Oliveira Lima, Alban Ferrier and Philippe Goldner
Nano Letters 17 (2) 778 (2017)
https://doi.org/10.1021/acs.nanolett.6b03949