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Jakub Kaczmarski, Michał A Borysiewicz, Krzysztof Piskorski, et al. Semiconductor Science and Technology 33(1) 015010 (2018) https://doi.org/10.1088/1361-6641/aa9acb
Implementation of Low‐Power Electronic Devices Using Solution‐Processed Tantalum Pentoxide Dielectric
Jungwoo Heo, Song Yi Park, Jae Won Kim, Seyeong Song, Yung Jin Yoon, Jaeki Jeong, Hyungsu Jang, Kang Taek Lee, Jung Hwa Seo, Bright Walker and Jin Young Kim Advanced Functional Materials 28(28) (2018) https://doi.org/10.1002/adfm.201704215
Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
Vladimir Kolkovsky, Sebastian Scholz, Valery Kolkovsky, Jan-Uwe Schmidt and Rene Heller Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36(6) (2018) https://doi.org/10.1116/1.5045634
β-Ga2O3-based metal–oxide–semiconductor photodiodes with HfO2 as oxide
Electrostatic Self-Assembly: Understanding the Significance of the Solvent
Eric B. Lindgren, Ivan N. Derbenev, Armik Khachatourian, et al. Journal of Chemical Theory and Computation 14(2) 905 (2018) https://doi.org/10.1021/acs.jctc.7b00647
Structural and electrical properties of ferroelectric BiFeO3/HfO2 gate stack for nonvolatile memory applications
Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
Karsten Henkel, Malgorzata Kot and Dieter Schmeißer Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35(1) (2017) https://doi.org/10.1116/1.4971991
Electrical Properties of Ge pMOSFETs With Ultrathin EOT HfO2/AlOx/GeOxGate-Stacks and NiGe Metal Source/Drain
Cross-Point Resistive Switching Memory and Urea Sensing by Using Annealed GdOxFilm in IrOx/GdOx/W Structure for Biomedical Applications
Pankaj Kumar, Siddheswar Maikap, Sreekanth Ginnaram, et al. Journal of The Electrochemical Society 164(4) B127 (2017) https://doi.org/10.1149/2.1011704jes
Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor
Quantum Dot Channel (QDC) Field Effect Transistors (FETs) Configured as Floating Gate Nonvolatile Memories (NVMs)
Jun Kondo, Murali Lingalugari, Pial Mirdha, et al. International Journal of High Speed Electronics and Systems 26(03) 1740015 (2017) https://doi.org/10.1142/S0129156417400158
Energy band alignment at the nanoscale
Jonas Deuermeier, Elvira Fortunato, Rodrigo Martins and Andreas Klein Applied Physics Letters 110(5) (2017) https://doi.org/10.1063/1.4975644
Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics
Mrinal K. Hota, Fwzah H. Alshammari, Khaled N. Salama and Husam N. Alshareef ACS Applied Materials & Interfaces 9(26) 21856 (2017) https://doi.org/10.1021/acsami.7b03078
Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB|MgO interface
Xiang Li, Kevin Fitzell, Di Wu, C. Ty Karaba, Abraham Buditama, Guoqiang Yu, Kin L. Wong, Nicholas Altieri, Cecile Grezes, Nicholas Kioussis, Sarah Tolbert, Zongzhi Zhang, Jane P. Chang, Pedram Khalili Amiri and Kang L. Wang Applied Physics Letters 110(5) (2017) https://doi.org/10.1063/1.4975160
Effects of anodisation parameters on thin film properties: A review
Direct imaging of sketched conductive nanostructures at the LaAlO3/SrTiO3 interface
Zhanzhi Jiang, Xiaoyu Wu, Hyungwoo Lee, Jung-Woo Lee, Jianan Li, Guanglei Cheng, Chang-Beom Eom, Jeremy Levy and Keji Lai Applied Physics Letters 111(23) (2017) https://doi.org/10.1063/1.5005917
Performance of THz Components Based on Microstrip PECVD SiNxTechnology
Matvey Finkel, Holger Thierschmann, Luca Galatro, et al. IEEE Transactions on Terahertz Science and Technology 7(6) 765 (2017) https://doi.org/10.1109/TTHZ.2017.2759507
Determining the Optimized Layer-by-Layer Film Architecture With Dendrimer/Carbon Nanotubes for Field-Effect Sensors
Marcos A. M. Sousa, Jose R. Siqueira, Andres Vercik, Michael J. Schoning and Osvaldo N. Oliveira IEEE Sensors Journal 17(6) 1735 (2017) https://doi.org/10.1109/JSEN.2017.2653238
High-ĸ dielectric oxide as an interfacial layer with enhanced photo-generation for Gr/Si solar cells
Trap-assisted tunneling, capacitance–voltage characteristics, and surface properties of Sm2O3 thin film on Si substrate
Kian Heng Goh, A. S. M. A. Haseeb and Yew Hoong Wong Journal of Materials Science: Materials in Electronics 28(6) 4725 (2017) https://doi.org/10.1007/s10854-016-6115-8
Effect of oxygen vacancies and strain on the phonon spectrum of HfO2 thin films
Lingyuan Gao, Eilam Yalon, Annabel R. Chew, Sanchit Deshmukh, Alberto Salleo, Eric Pop and Alexander A. Demkov Journal of Applied Physics 121(22) (2017) https://doi.org/10.1063/1.4984833
Method for disclosing invisible physical properties in metal−ferroelectric−insulator−semiconductor gate stacks
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations
R. Thamankar, F. M. Puglisi, A. Ranjan, N. Raghavan, K. Shubhakar, J. Molina, L. Larcher, A. Padovani, P. Pavan, S. J. O'Shea and K. L. Pey Journal of Applied Physics 122(2) (2017) https://doi.org/10.1063/1.4991002
Low-voltage organic thin-film transistors based on solution-processed hybrid dielectrics: theoretical and experimental studies
Interface formation energy, bonding, energy band alignment in α-NaYF 4 related core shell models: For future multi-layer core shell luminescence materials
Comparison of resistive switching characteristics by using e-gun/sputter deposited SiOx film in W/SiOx/TiN structure and pH/creatinine sensing through iridium electrode
Composite Polymer Electrolytes with Li7La3Zr2O12 Garnet-Type Nanowires as Ceramic Fillers: Mechanism of Conductivity Enhancement and Role of Doping and Morphology
Ting Yang, Jin Zheng, Qian Cheng, Yan-Yan Hu and Candace K. Chan ACS Applied Materials & Interfaces 9(26) 21773 (2017) https://doi.org/10.1021/acsami.7b03806
Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO 2 and fabricated at low temperature
High performance organic nonvolatile memory transistors based on HfO2 and poly(α-methylstyrene) electret hybrid charge-trapping layers
W. C. Xu, H. X. He, X. S. Jing, S. J. Wu, Z. Zhang, J. W. Gao, X. S. Gao, G. F. Zhou, X. B. Lu and J.-M. Liu Applied Physics Letters 111(6) (2017) https://doi.org/10.1063/1.4997748
Real-time atomistic observation of structural phase transformations in individual hafnia nanorods
Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories
Robin Khosla, Erlend Granbo Rolseth, Pawan Kumar, et al. IEEE Transactions on Device and Materials Reliability 17(1) 80 (2017) https://doi.org/10.1109/TDMR.2017.2659760
The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO 2 high-k dielectrics
Rigorous numerical modeling of scattering-type scanning near-field optical microscopy and spectroscopy
Xinzhong Chen, Chiu Fan Bowen Lo, William Zheng, Hai Hu, Qing Dai and Mengkun Liu Applied Physics Letters 111(22) (2017) https://doi.org/10.1063/1.5008663
Defect correlated with positive charge trapping in functional HfO2 layers on (100)Si revealed by electron spin resonance: Evidence for oxygen vacancy?