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Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device
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Modern Scattering‐Type Scanning Near‐Field Optical Microscopy for Advanced Material Research
Xinzhong Chen, Debo Hu, Ryan Mescall, Guanjun You, D. N. Basov, Qing Dai and Mengkun Liu Advanced Materials 31(24) (2019) https://doi.org/10.1002/adma.201804774
PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
Plasma-Catalytic Dry Reforming of CH4 over Calcium Oxide: Catalyst Structural and Textural Modifications
Nassim Bouchoul, Elodie Fourré, Jean-Michel Tatibouët and Catherine Batiot-Dupeyrat Plasma Chemistry and Plasma Processing 39(3) 713 (2019) https://doi.org/10.1007/s11090-019-09966-9
Edge-plasmon assisted electro-optical modulator
Ivan A. Pshenichnyuk, Gleb I. Nazarikov, Sergey S. Kosolobov, Andrei I. Maimistov and Vladimir P. Drachev Physical Review B 100(19) (2019) https://doi.org/10.1103/PhysRevB.100.195434
Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning
Low temperature sputtered ITO on glass and epoxy resin substrates: influence of process parameters and substrate roughness on morphological and electrical properties
Improved energy density and charge-discharge efficiency in solution processed highly defined ferroelectric block copolymer-based dielectric nanocomposites
Simulation study of gated nanowire InAs/Si Hetero p channel TFET and effects of interface trap
H. Bijo Joseph, Sankalp Kumar Singh, R.M. Hariharan, Yusuf Tarauni and D. John Thiruvadigal Materials Science in Semiconductor Processing 103 104605 (2019) https://doi.org/10.1016/j.mssp.2019.104605
Sourav Roy, Qiang Wang, Yunkun Wang, Yijun Zhang, Shijie Zhai, Wei Ren, Zuo-Guang Ye and Gang Niu 1 (2019) https://doi.org/10.1109/ICICDT.2019.8790856
Importance of precursor delivery mechanism for Tetra-kis-ethylmethylaminohafnium/water atomic layer deposition process
Solid-Phase Epitaxy of Perovskite High Dielectric PrAlO3 Films Grown by Atomic Layer Deposition for Use in Two-Dimensional Electronics and Memory Devices
Electrical and Optical Properties of Plasma-Sprayed Yttria
Jiri Kotlan, Ramachandran Chidambaram Seshadri and Pavel Ctibor Metallurgical and Materials Transactions A 50(1) 504 (2019) https://doi.org/10.1007/s11661-018-4994-4
Studying the outdoor performance of organic building-integrated photovoltaics laminated to the cladding of a building prototype
Impact of encapsulation method on the adsorbate induced electrical instability of monolayer graphene
Sırrı Batuhan Kalkan, Alper Yanilmaz and Cem Çelebi Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 37(5) (2019) https://doi.org/10.1116/1.5099141
Numerical Simulation and Optimization of An a-ITZO TFT Based on a Bi-Layer Gate Dielectrics
Phase stability, microstructure, and dielectric properties of quaternary oxides In12Ti10A2BO42 (A: Ga or Al; B: Mg or Zn)
Felipe Francisco Castillón‐Barraza, Alejandro Durán, Mario Humberto Farías, Francisco Brown, Guillermo Tiburcio Munive, Fernando Cubillas and Victor Emmanuel Alvarez‐Montaño Journal of the American Ceramic Society 102(1) 320 (2019) https://doi.org/10.1111/jace.15920
Electrochemical behavior of a gold nanoring electrode microfabricated on a silicon micropillar
Effect of the Annealing Temperature of the Seed Layer on the Following Main Layer in Atomic‐Layer‐Deposited SrTiO3 Thin Films
Sang Hyeon Kim, Woongkyu Lee, Cheol Hyun An, Dong‐Gun Kim, Dae Seon Kwon, Seong Tak Cho, Soon Hyung Cha, Jun Il Lim and Cheol Seong Hwang physica status solidi (RRL) – Rapid Research Letters 13(5) (2019) https://doi.org/10.1002/pssr.201800557
Electrical and Structural Properties of the Partial Ternary Thin-Film System Ni–Si–B
Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
Vladimir Kolkovsky, Sebastian Scholz, Valery Kolkovsky, Jan-Uwe Schmidt and Rene Heller Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36(6) (2018) https://doi.org/10.1116/1.5045634
First principle study of single electron transistor based on metal-organic complex of dibenzothiophene
Frequency dispersion and dielectric relaxation in postdeposition annealed high-κ erbium oxide metal–oxide–semiconductor capacitors
Robin Khosla and Satinder K. Sharma Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36(1) (2018) https://doi.org/10.1116/1.4995809
Deep and fast free-space electro-absorption modulation in a mobility-independent graphene-loaded Bragg resonator
Spyros Doukas, Alma Chatzilari, Alva Dagkli, Andreas Papagiannopoulos and Elefterios Lidorikis Applied Physics Letters 113(1) (2018) https://doi.org/10.1063/1.5030699
Nitrogen plasma-induced HfSiON film growth from Hf nanoscale islands on SiO2/Si
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Effect of nitrogen passivation/pre nitration on interface properties of atomic layer deposited HfO2
Crystalline phase dependent electrical properties of Mg incorporated tetragonal phase stabilized ZrO2 high-κ dielectric layer in Si based MOS capacitors
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Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications
Implementation of Low‐Power Electronic Devices Using Solution‐Processed Tantalum Pentoxide Dielectric
Jungwoo Heo, Song Yi Park, Jae Won Kim, Seyeong Song, Yung Jin Yoon, Jaeki Jeong, Hyungsu Jang, Kang Taek Lee, Jung Hwa Seo, Bright Walker and Jin Young Kim Advanced Functional Materials 28(28) (2018) https://doi.org/10.1002/adfm.201704215
Nanoscale potential fluctuations in nonstoichiometrics tantalum oxide
Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams
Akira Uedono, Takahiro Yamada, Takuji Hosoi, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann and Heiji Watanabe Applied Physics Letters 112(18) (2018) https://doi.org/10.1063/1.5027257
Electrostatic Supercapacitors by Atomic Layer Deposition on Nanoporous Anodic Alumina Templates for Environmentally Sustainable Energy Storage
Luis Javier Fernández-Menéndez, Ana Silvia González, Víctor Vega and Víctor Manuel De la Prida Coatings 8(11) 403 (2018) https://doi.org/10.3390/coatings8110403
Structural and band gaps studies of novel Al2-xHfxO3 materials toward MOS applications
Norlida Kamarulzaman, Annie Maria Mahat, Nurhanna Badar and Ce Zhou Zhao Materials Chemistry and Physics 216 237 (2018) https://doi.org/10.1016/j.matchemphys.2018.03.093
Seyed Ehsan Hosseininejad, Sergi Abadal, Mohammad Neshat, Reza Faraji-Dana, Max C. Lemme, Christoph Suessmeier, Peter Haring Bolivar, Eduard Alarcon and Albert Cabellos-Aparicio 1 (2018) https://doi.org/10.1109/WCNC.2018.8377201
Investigation of CHF3 treatment on the energy band at the MoS2/HfZrO4 heterostructure
Kuilong Li, Zhiwen Li, Yuehua Hong, Cong Hu, Wei Mao and Xinke Liu Applied Physics Letters 113(14) (2018) https://doi.org/10.1063/1.5054137
Electrically tunable perfect light absorbers as color filters and modulators