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Excellent surface passivation of germanium by a-Si:H/Al2O3 stacks
Wilhelmus J. H. (Willem-Jan) Berghuis, Jimmy Melskens, Bart Macco, Roel J. Theeuwes, Lachlan E. Black, Marcel A. Verheijen and Wilhelmus M. M. (Erwin) Kessels Journal of Applied Physics 130(13) (2021) https://doi.org/10.1063/5.0064808
Silicon Nanowire Parameter Extraction Using DFT and Comparative Performance Analysis of SiNWFET and CNTFET Devices
Investigations of Structural and Electrical Properties of ALD Films Formed with the Ozone Precursor
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Encyclopedia of Materials: Technical Ceramics and Glasses
Ulrich Fotheringham, Martin Letz, Uwe Petzold, Simone Ritter and Yvonne Menke-Berg Encyclopedia of Materials: Technical Ceramics and Glasses 658 (2021) https://doi.org/10.1016/B978-0-12-818542-1.00085-0
Plasma-catalysis coupling for CH4 and CO2 conversion over mesoporous macroporous Al2O3: Influence of the physico-chemical properties
Electrically induced change in HfO2/1-monolayer TiO2/SiO2 metal-oxide-semiconductor stacks: capacitance–voltage and hard X-ray photoelectron spectroscopy studies
Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode
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Effects of Ge-related storage centers formation in Al2O3 enhancing the performance of floating gate memories
Controllable Excitation of Surface Plasmon Polaritons in Graphene‐Based Semiconductor Quantum Dot Waveguides
Mikhail Yu. Gubin, Alexei V. Prokhorov, Valentyn S. Volkov and Andrey B. Evlyukhin Annalen der Physik 533(11) (2021) https://doi.org/10.1002/andp.202100139
High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications
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Design and analysis of ultra-thin dielectric film embedded nanoscale double-gate MOSFETs for boosting logic performance
Trap Reduction through O3 Post‐Deposition Treatment of Y2O3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates
Dong Gun Kim, Dae Seon Kwon, Junil Lim, Haengha Seo, Tae Kyun Kim, Woongkyu Lee and Cheol Seong Hwang Advanced Electronic Materials 7(2) (2021) https://doi.org/10.1002/aelm.202000819
Traceable Nanoscale Measurements of High Dielectric Constant by Scanning Microwave Microscopy
Damien Richert, José Morán-Meza, Khaled Kaja, Alexandra Delvallée, Djamel Allal, Brice Gautier and François Piquemal Nanomaterials 11(11) 3104 (2021) https://doi.org/10.3390/nano11113104
Passivated Porous Silicon Membranes and Their Application to Optical Biosensing
Cu2+ substituted Cr2O3 nanostructures prepared by microwave-assisted method: an investigation of its structural, morphological, optical, and dielectric properties
Novel Approach to Synthesize Nanostructured Gallium Oxide for Devices Operating in Harsh Environmental Conditions
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Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Karen Geens, Shuzhen You, Benoit Bakeroot, Stefaan Decoutere, Patrick Diehle, Susanne Hübner, Frank Altmann, Matteo Buffolo, Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini Materials 14(9) 2316 (2021) https://doi.org/10.3390/ma14092316
Chemically Deposited Nanocrystalline Metal Oxide Thin Films
Hf1−xZrxO2 and HfO2/ZrO2 gate dielectrics with extremely low density of interfacial defects using low temperature atomic layer deposition on GaN and InP
Kaveh Ahadi and Ken Cadien Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 39(3) (2021) https://doi.org/10.1116/6.0000914
Al2O3 and HfO2 Atomic Layers Deposited in Single and Multilayer Configurations on Titanium and on Stainless Steel for Biomedical Applications
Progress in Traceable Nanoscale Capacitance Measurements Using Scanning Microwave Microscopy
François Piquemal, José Morán-Meza, Alexandra Delvallée, Damien Richert and Khaled Kaja Nanomaterials 11(3) 820 (2021) https://doi.org/10.3390/nano11030820
High-k 2D Sb2O3 Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process
Deposition of a SiO2 Shell of Variable Thickness and Chemical Composition to Carbonyl Iron: Synthesis and Microwave Measurements
Arthur V. Dolmatov, Sergey S. Maklakov, Polina A. Zezyulina, Alexey V. Osipov, Dmitry A. Petrov, Andrey S. Naboko, Viktor I. Polozov, Sergey A. Maklakov, Sergey N. Starostenko and Andrey N. Lagarkov Sensors 21(14) 4624 (2021) https://doi.org/10.3390/s21144624
Performance Analysis for Tri-Gate Junction-Less FET by Employing Trioxide and Rectangular Core Shell (RCS) Architecture
Atypical secondary electron emission yield curves of very thin SiO2 layers: Experiments and modeling
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Range-separated hybrid functionals for mixed dimensional heterojunctions: Application to phthalocyanines/MoS2
Origin of Ferroelectricity and Multiferroicity in Binary Oxide Thin Films
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C. A. F. Vaz, Y. J. Shin, M. Bibes, K. M. Rabe, F. J. Walker and C. H. Ahn Applied Physics Reviews 8(4) (2021) https://doi.org/10.1063/5.0060218
Comparative study of oxidizing ambient infused with varying nitrogen flow rates for fabrication of ternary nitrided
AlZrO
based
MOS
capacitor
Hock Jin Quah, Zainuriah Hassan and Way Foong Lim International Journal of Energy Research 45(3) 3838 (2021) https://doi.org/10.1002/er.6037
Effect of crystallinity on thermal atomic layer etching of hafnium oxide, zirconium oxide, and hafnium zirconium oxide
Jessica A. Murdzek and Steven M. George Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 38(2) (2020) https://doi.org/10.1116/1.5135317
Tuning the permittivity of tellurium dioxide by Ti substitution
Algorithm for Automatic Detection of Surface Atoms
Yoyo Hinuma, Takashi Kamachi and Nobutsugu Hamamoto Transactions of the Materials Research Society of Japan 45(4) 115 (2020) https://doi.org/10.14723/tmrsj.45.115
Impact of high mobility III‐V compound material of a short channel thin‐film SiGe double gate junctionless MOSFET as a source
Tuning Nanofillers in In Situ Prepared Polyimide Nanocomposites for High‐Temperature Capacitive Energy Storage
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Phase evolution in (1−x)(Na0.5Bi0.5)TiO3-xSrTiO3 solid solutions: A study focusing on dielectric and ferroelectric characteristics
Structure evolution, bandgap, and dielectric function in La-doped hafnium oxide thin layer subjected to swift Xe ion irradiation
E. I. Suvorova, O. V. Uvarov, N. A. Arkharova, A. D. Ibrayeva, V. A. Skuratov and P. A. Buffat Journal of Applied Physics 128(16) (2020) https://doi.org/10.1063/5.0025536
Cation diffusion in polycrystalline thin films of monoclinic HfO2 deposited by atomic layer deposition
Michael P. Mueller, Katrin Pingen, Alexander Hardtdegen, Stephan Aussen, Andreas Kindsmueller, Susanne Hoffmann-Eifert and Roger A. De Souza APL Materials 8(8) (2020) https://doi.org/10.1063/5.0013965